CN107731960A - The preparation method of PERC cell backside silicon nitride multilayer films - Google Patents
The preparation method of PERC cell backside silicon nitride multilayer films Download PDFInfo
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- CN107731960A CN107731960A CN201710970288.9A CN201710970288A CN107731960A CN 107731960 A CN107731960 A CN 107731960A CN 201710970288 A CN201710970288 A CN 201710970288A CN 107731960 A CN107731960 A CN 107731960A
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- silicon nitride
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 64
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 18
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 18
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000007747 plating Methods 0.000 claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000002161 passivation Methods 0.000 claims abstract description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 235000008216 herbs Nutrition 0.000 claims abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- 239000011574 phosphorus Substances 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 210000002268 wool Anatomy 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 abstract description 6
- 230000031700 light absorption Effects 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to solar cell preparing technical field, a kind of more particularly to preparation method of PERC cell backsides silicon nitride multilayer film, carry out making herbs into wool successively to the back side of cell silicon chip, spread, wash phosphorus, back of the body passivation deposition, annealing, cell backside plating silicon nitride film, battery front side plating silicon nitride, laser and printing-sintering, cell backside plating silicon nitride film is using double-deck or multilayer silicon nitride plated film, and the refractive index of internal layer is less than the refractive index of outer layer, n values represent refractive index.The preparation method of the PERC cell backside silicon nitride multilayer films of the present invention, using back side silicon nitride silicon multilayer form membrane, increases the reflectivity of back light, effectively improves the absorption of light, there is obvious gain to short circuit current, improve the efficiency of cell piece.
Description
Technical field
The present invention relates to solar cell preparing technical field, more particularly to a kind of PERC cell backsides silicon nitride multilayer film
Preparation method.
Background technology
PERC technologies, i.e. passivation emitter rear-face contact, by forming passivation layer in rear surface of solar cell, can significantly it drop
Low back surface electricity recombination rate, good internal opticses back reflection mechanism is formed, lift open-circuit voltage, the short circuit electricity of battery
Stream, so as to lift the conversion efficiency of battery.
PERC solar cells have technique simple, and cost is relatively low, and with existing production line for manufacturing battery compatibility it is high the advantages of,
It is a kind of high performance solar batteries out newly developed, has obtained the extensive concern of industry, be expected to turn into following high-efficiency solar
The main flow direction of battery.
The production of conventional silicon solar cell, PERC silicon solar cell production stages are as follows：The 1st, one P type silicon substrates are provided
Plate, cleaned first；2nd, reversely led using phosphorous oxychloride (POCl3) liquid source diffusion method to be formed in P-type silicon substrate
The n type diffused layer (N-type emitter stage) of electric type；3rd, after diffusion layer is formed, it is etched, is removed caused by diffusion with hydrofluoric acid
The PN junction of silicon chip section edges；4th, SiNx is deposited on the n type diffused layer of front, dielectric layer is formed, overleaf deposits AlOx/
SiNx, form passivation layer；5th, the passivation layer on PERC silicon solar cell backs face carries out laser windowing；6th, in battery front side
On dielectric layer on carry out silk-screen printing, and dry front side silver paste, front electrode formed, in the passivation of p-type substrate back perforation
Silk-screen printing is carried out on layer, and dries back side silver paste, forms backplate；7th, burn altogether, electrode is fully dried, while formed good
Good electrical contact.
At present, the technical back side silicon nitride silicon of PERC mainly uses individual layer membrane technology at present, and backside reflection rate can only normally be done
To 35% or so.
The content of the invention
The technical problem to be solved in the present invention is：In order to improve backside reflection rate, the present invention provides a kind of PERC electricity
The preparation method of pond back side silicon nitride silicon multilayer film.
The technical solution adopted for the present invention to solve the technical problems is：A kind of PERC cell backsides silicon nitride multilayer film
Preparation method, the back side of cell silicon chip is carried out successively making herbs into wool, spread, wash phosphorus, back of the body passivation deposition, annealing, cell backside plate nitrogen
SiClx film, battery front side plating silicon nitride, laser and printing-sintering, cell backside plating silicon nitride film is using double-deck or multilayer silicon nitride
Plated film, and the refractive index of internal layer is less than the refractive index of outer layer, n values represent refractive index.
Further specifically, the cell backside plating silicon nitride film uses double-layer silicon nitride plated film, second layer silicon nitride film
N values be more than first layer silicon nitride film n values.
Cell backside plating silicon nitride film use multilayer silicon nitride plated film, first layer silicon nitride film thickness for 50~
100nm, n value are 2.0~2.03, using SiH4400~800sccm, NH36000~10000sccm, pressure 1700mtorr, is penetrated
5000~9000 watts of frequency power.
Second layer silicon nitride film thickness is 50~100nm, and n values are 2.20~2.30, using SiH4800~1200sccm,
NH33000~6000sccm, pressure 1700mtorr, 5000~9000 watts of radio-frequency power.
The n values of third layer silicon nitride film are more than the n values of second layer silicon nitride film, the like.
The invention has the advantages that the preparation method of the PERC cell backside silicon nitride multilayer films of the present invention, using the back of the body
Face silicon nitride multilayer form membrane, increases the reflectivity of back light, effectively improves the absorption of light, there is obvious increasing to short circuit current
Benefit, improve the efficiency of cell piece.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples.
Fig. 1 is the contrast schematic diagram of reflectance curve of the present invention.
Embodiment
In conjunction with the accompanying drawings, the present invention is further explained in detail.These accompanying drawings are simplified schematic diagram, only with
Illustration illustrates the basic structure of the present invention, therefore it only shows the composition relevant with the present invention.
As shown in figure 1, being the embodiment of the present invention one, a kind of preparation method of PERC cell backsides silicon nitride multilayer film is right
The back side of cell silicon chip carries out making herbs into wool, spreads, washes phosphorus, back of the body passivation deposition, annealing, cell backside plating silicon nitride film, battery successively
Front plating silicon nitride, laser and printing-sintering, cell backside plating silicon nitride film use double-layer silicon nitride plated film, second layer silicon nitride
The n values of film are more than the n values of first layer silicon nitride film.
Specific duplicature is as follows：
First layer silicon nitride film thickness is 50~100nm, and n values are 2.0~2.03, using SiH4400~800sccm is (vertical
Square cm per minute), NH36000~10000sccm (cc/min), pressure 1700mtorr (millitorr), radio-frequency power
5000~9000 watts.
Second layer silicon nitride film thickness is 50~100nm, and n values are 2.20~2.30, using SiH4800~1200sccm,
NH33000~6000sccm, pressure 1700mtorr (millitorr), 5000~9000 watts of radio-frequency power.
The present embodiment and the technique effect of prior art monofilm contrast
| Uoc | Isc | Rs | Rsh | FF | NCell | |
| Monofilm | 668.7 | 9.833 | 1.76 | 88 | 80.59% | 21.72% |
| Duplicature | 668.4 | 9.855 | 1.71 | 97 | 80.72% | 21.79% |
| Difference | 0.3 | -0.022 | 0.05 | -9 | - 0.13% | - 0.07% |
Table 1
Uoc represents open-circuit voltage in table 1, and Isc represents short circuit current (being the bigger the better), and Rs represents that series resistance is (smaller to get over
It is good), Rsh represents parallel resistance (being the bigger the better), and FF represents fill factor, curve factor (being the bigger the better), and NCell represents the efficiency of cell piece
(the higher the better).
With reference to table 1, can be derived that：Using back side silicon nitride silicon duplicature, efficiency can lift 0.07%, and short circuit current has 22mA
Be obviously improved.
With reference to Fig. 1 from the point of view of reflectance curve figure, using back side double membrane structure, backside reflection rate is in 500~900nm
In the range of be obviously improved.
The embodiment of the present invention two, a kind of preparation method of PERC cell backsides silicon nitride multilayer film, to the back of the body of cell silicon chip
Face carry out successively making herbs into wool, spread, wash phosphorus, the back of the body passivation deposition, annealing, cell backside plating silicon nitride film, battery front side plating silicon nitride,
Laser and printing-sintering, cell backside plating silicon nitride film use three layers of silicon nitride plated film,
Specific trilamellar membrane is as follows：
First layer silicon nitride film thickness is 50~100nm, and n values are 2.0~2.03, using SiH4400~800sccm is (vertical
Square cm per minute), NH36000~10000sccm (cc/min), pressure 1700mtorr (millitorr), radio-frequency power
5000~9000 watts.
Second layer silicon nitride film thickness is 50~100nm, and n values are 2.20~2.30, using SiH4800~1200sccm,
NH33000~6000sccm, pressure 1700mtorr (millitorr), 5000~9000 watts of radio-frequency power.
Third layer silicon nitride film thickness is 50~100nm, and n values are 2.35~2.40, using SiH41000~
1200sccm, NH33500~5000sccm, pressure 1600mtorr (millitorr), 5000~9000 watts of radio-frequency power.
Using back side silicon nitride silicon trilamellar membrane, efficiency can lift 0.1%, and short circuit current has being obviously improved for 30mA.The back side is anti-
Rate is penetrated to be obviously improved in the range of 500~900nm.
It is complete by above-mentioned description, relevant staff using the above-mentioned desirable embodiment according to the present invention as enlightenment
Various changes and amendments can be carried out without departing from the scope of the technological thought of the present invention' entirely.The technology of this invention
Property scope is not limited to the content on specification, it is necessary to determines its technical scope according to right.
Claims (3)
1. a kind of preparation method of PERC cell backsides silicon nitride multilayer film, making herbs into wool, expansion are carried out successively to the back side of cell silicon chip
Dissipate, wash phosphorus, back of the body passivation deposition, annealing, cell backside plating silicon nitride film, battery front side plating silicon nitride, laser and printing-sintering, its
It is characterised by：Cell backside plating silicon nitride film is using double-deck or multilayer silicon nitride plated film, and the refractive index of internal layer is less than outer layer
Refractive index, n values represent refractive index.
2. the preparation of PERC cell backsides silicon nitride multilayer film as claimed in claim 1, it is characterised in that：The cell backside
Plating silicon nitride film uses double-layer silicon nitride plated film, and the n values of second layer silicon nitride film are more than the n values of first layer silicon nitride film.
3. the preparation of PERC cell backsides silicon nitride multilayer film as claimed in claim 1, it is characterised in that：The cell backside
Plating silicon nitride film uses multilayer silicon nitride plated film, and first layer silicon nitride film thickness is 50~100nm, and n values are 2.0~2.03, are adopted
Use SiH4400~800sccm, NH36000~10000sccm, pressure 1700mtorr, 5000~9000W of radio-frequency power.
Second layer silicon nitride film thickness is 50~100nm, and n values are 2.20~2.30, using SiH4800~1200sccm,
NH33000~6000sccm, pressure 1700mtorr, 5000~9000W of radio-frequency power.
The n values of third layer silicon nitride film are more than the n values of second layer silicon nitride film, the like.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710970288.9A CN107731960A (en) | 2017-10-16 | 2017-10-16 | The preparation method of PERC cell backside silicon nitride multilayer films |
| PCT/CN2018/090064 WO2019076065A1 (en) | 2017-10-16 | 2018-06-06 | Preparation method for rear surface silicon nitride multilayer film of perc |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710970288.9A CN107731960A (en) | 2017-10-16 | 2017-10-16 | The preparation method of PERC cell backside silicon nitride multilayer films |
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| Publication Number | Publication Date |
|---|---|
| CN107731960A true CN107731960A (en) | 2018-02-23 |
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| CN201710970288.9A Pending CN107731960A (en) | 2017-10-16 | 2017-10-16 | The preparation method of PERC cell backside silicon nitride multilayer films |
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| WO (1) | WO2019076065A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
| WO2019076065A1 (en) * | 2017-10-16 | 2019-04-25 | 常州亿晶光电科技有限公司 | Preparation method for rear surface silicon nitride multilayer film of perc |
| CN111029414A (en) * | 2019-12-25 | 2020-04-17 | 横店集团东磁股份有限公司 | Multilayer SiN prepared by solar single crystal PERCxBack film process method |
| CN111384208A (en) * | 2019-11-19 | 2020-07-07 | 横店集团东磁股份有限公司 | Process for reducing CID of solar single-crystal PERC battery and solar single-crystal PERC battery |
| CN112133764A (en) * | 2020-09-18 | 2020-12-25 | 江苏东鋆光伏科技有限公司 | PERC battery prepared by magnetron sputtering method and preparation process thereof |
| WO2022110613A1 (en) * | 2020-11-27 | 2022-06-02 | 浙江贝盛光伏股份有限公司 | Perc cell preparation method |
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| CN105914256A (en) * | 2016-04-19 | 2016-08-31 | 晋能清洁能源科技有限公司 | Manufacturing method for PERC crystalline silicon solar cell |
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| CN107731960A (en) * | 2017-10-16 | 2018-02-23 | 常州亿晶光电科技有限公司 | The preparation method of PERC cell backside silicon nitride multilayer films |
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- 2017-10-16 CN CN201710970288.9A patent/CN107731960A/en active Pending
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2018
- 2018-06-06 WO PCT/CN2018/090064 patent/WO2019076065A1/en active Application Filing
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| CN102456752A (en) * | 2010-11-04 | 2012-05-16 | Q-电池公司 | Solar cell and solar cell manufacturing method |
| CN104300033A (en) * | 2013-07-18 | 2015-01-21 | 北京中科信电子装备有限公司 | Preparation method of multilayer silicon nitride film |
| CN106206757A (en) * | 2015-03-26 | 2016-12-07 | 新日光能源科技股份有限公司 | Solar cell with multilayer anti-reflection coating film on back surface |
| CN105914256A (en) * | 2016-04-19 | 2016-08-31 | 晋能清洁能源科技有限公司 | Manufacturing method for PERC crystalline silicon solar cell |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019076065A1 (en) * | 2017-10-16 | 2019-04-25 | 常州亿晶光电科技有限公司 | Preparation method for rear surface silicon nitride multilayer film of perc |
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
| CN111384208A (en) * | 2019-11-19 | 2020-07-07 | 横店集团东磁股份有限公司 | Process for reducing CID of solar single-crystal PERC battery and solar single-crystal PERC battery |
| CN111029414A (en) * | 2019-12-25 | 2020-04-17 | 横店集团东磁股份有限公司 | Multilayer SiN prepared by solar single crystal PERCxBack film process method |
| CN111029414B (en) * | 2019-12-25 | 2021-05-28 | 横店集团东磁股份有限公司 | Multilayer SiN prepared by solar single crystal PERCxBack film process method |
| CN112133764A (en) * | 2020-09-18 | 2020-12-25 | 江苏东鋆光伏科技有限公司 | PERC battery prepared by magnetron sputtering method and preparation process thereof |
| CN112133764B (en) * | 2020-09-18 | 2021-11-26 | 江苏东鋆光伏科技有限公司 | PERC battery prepared by magnetron sputtering method and preparation process thereof |
| WO2022110613A1 (en) * | 2020-11-27 | 2022-06-02 | 浙江贝盛光伏股份有限公司 | Perc cell preparation method |
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| WO2019076065A1 (en) | 2019-04-25 |
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