CN104300033A - Preparation method of multilayer silicon nitride film - Google Patents
Preparation method of multilayer silicon nitride film Download PDFInfo
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- CN104300033A CN104300033A CN201310305712.XA CN201310305712A CN104300033A CN 104300033 A CN104300033 A CN 104300033A CN 201310305712 A CN201310305712 A CN 201310305712A CN 104300033 A CN104300033 A CN 104300033A
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- silicon nitride
- reflection film
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- refractive index
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 23
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910000077 silane Inorganic materials 0.000 claims abstract description 22
- 229910021529 ammonia Inorganic materials 0.000 claims description 21
- 238000004062 sedimentation Methods 0.000 claims description 15
- 230000003667 anti-reflective effect Effects 0.000 claims description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 235000008216 herbs Nutrition 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 238000002161 passivation Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910002026 crystalline silica Inorganic materials 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 239000010410 layer Substances 0.000 description 6
- 210000004027 cell Anatomy 0.000 description 5
- 230000008033 biological extinction Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Sustainable Energy (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a preparation method of a multilayer silicon nitride film. The method comprises the steps that A) texturized, diffused and etched crystal silicon is deposited by a tubular PECVD to obtain a silicon nitride anti-reflection film of a high refractive index; B) the flow of silane is turned off for 1 to 2 minutes while the flow of ammonia gas and RF power are unchanged; C) the silicon nitride anti-reflection film of the high refractive index is deposited to obtain a silicon nitride anti-reflection film whose refractive index is slightly lower; D) step B) is repeated; and E) the silicon nitride anti-reflection film whose refractive index is slightly lower is deposited to obtain a silicon nitride anti-reflection film of a low refractive index, and thus, a tri-layer silicon nitride anti-reflection film is obtained. The multilayer silicon nitride anti-reflection film is formed by deposition on a crystalline silica solar cell to improve the surface passivation effect of the solar cell, reduce the reflectivity of the cell, benefit short-circuit current and open-circuit voltage of the cell, and improve the efficiency of the solar cell.
Description
Technical field
The present invention is a kind of crystal silicon solar energy battery manufacturing process, relates in particular to a kind of preparation method of multilayer silicon nitride antireflective film.
Background technology
Plasma enhanced chemical vapor deposition (PECVD) prepares hydrogenated amorphous silicon nitride (SiNx:H) has become a procedure in the standard technology of industrial solar cell.The advantage of main existence three aspect: as antireflection film; Passivating solar battery surface thus reduce surface recombination velocity; Hydrogen abundant in film can defect state in passivation.
Affecting one of key factor of three Advantages found is exactly silicone content in silicon nitride.Increase the content of silicon, refractive index n is all corresponding with extinction coefficient k to be increased.Extinction coefficient k increases, and the light absorption of silicon nitride will strengthen, so the film of high index of refraction n, high extinction coefficient k is not suitable as antireflective film.In air, the best refractive index of individual layer antireflective film is 1.96.And correspondingly increasing the content of silicon, surface passivation effect presents enhancing trend, and when refractive index of silicon nitride is increased to 2.3, surface recombination velocity drops to below 20cm/s.The body passivation of the best then appears at refractive index n between 2.1 to 2.2.
In order to integrate the advantage of silicon nitride film three aspect, the maximized object of the advantage that reaches, the present invention proposes a kind of new method, i.e. Multilayer silicon nitride antireflection film.Imagination is that the silicon nitride of first deposit one deck high index of refraction can the surface of passivation cell better, and then grow the lower silicon nitride film of refractive index successively, last one deck low-refraction silicon nitride film is for reducing surface reflectivity.
Summary of the invention
The object of this invention is to provide a kind of manufacture method of multilayer silicon nitride antireflective film, improve the electricity conversion of solar cell.
The technical solution used in the present invention is, provides a kind of manufacture method of double-layer silicon nitride anti-reflection film, performs successively as follows:
Crystalline silicon after making herbs into wool, diffusion, etching tubular type PECVD deposits by A, obtain high index of refraction silicon nitride film, PECVD parameters is: ammonia flow is 3000-4000sccm, silane flow rate is 800-1000sccm, pressure is 200Pa, radio-frequency power is 3500-4000w, and sedimentation time is 150-200s.
After B obtains high index of refraction silicon nitride anti-reflection film, close silane flow rate 1-2 minute, simultaneously keep ammonia flow and radio-frequency power constant.
C continues on the basis of high index of refraction antireflective film, again deposits the lower slightly silicon nitride anti-reflection film of refractive index.PECVD parameters is: ammonia flow is 3500-4500sccm, and silane flow rate is 500-800sccm, and pressure is 200Pa, and radio-frequency power is 3500-4000w, and sedimentation time is 350-400s.
D repeats step B.
E deposits low-refraction silicon nitride anti-reflection film on the basis of second layer silicon nitride anti-reflection film, PECVD parameters is: ammonia flow is 3800-4500sccm, and silane flow rate is 400-600sccm, and pressure is 200Pa, radio-frequency power is 3500-4000w, and sedimentation time is 250-300s.
The invention has the beneficial effects as follows: deposit multilayer silicon nitride anti-reflection film on crystal silicon solar energy battery, the passivation effect of solar cell surface can be improved, and reduce the reflectivity of battery, to the short stream of battery, to open pressure all beneficial, thus promote the efficiency of solar cell.
Embodiment
The manufacture method of multilayer silicon nitride antireflective film of the present invention, performs as follows successively:
Crystalline silicon after making herbs into wool, diffusion, etching tubular type PECVD deposits by A, obtain high index of refraction silicon nitride film, PECVD parameters is: ammonia flow is 3000-4000sccm, silane flow rate is 800-1000sccm, pressure is 200Pa, radio-frequency power is 3500-4000w, and sedimentation time is 150-200s.Refractive index is when 2.1-2.2, and silicon body passivation effect is best.
After B obtains high index of refraction silicon nitride anti-reflection film, close silane flow rate 1-2 minute, keep simultaneously ammonia flow and radio-frequency power constant, make ammonia resolve into hydrogen ion and enter crystalline silicon silicon body and neutralize some dangling bonds and impurity, thus be conducive to the passivation effect of silicon surface.
C continues on the basis of high index of refraction antireflective film, again deposits the lower slightly silicon nitride anti-reflection film of refractive index.PECVD parameters is: ammonia flow is 3500-4500sccm, and silane flow rate is 500-800sccm, and pressure is 200Pa, and radio-frequency power is 3500-4000w, and sedimentation time is 350-400s.
D repeats step B.
E deposits low-refraction silicon nitride anti-reflection film on the basis of second layer silicon nitride anti-reflection film, PECVD parameters is: ammonia flow is 3800-4500sccm, and silane flow rate is 400-600sccm, and pressure is 200Pa, radio-frequency power is 3500-4000w, and sedimentation time is 250-300s.This is most surface one deck silicon nitride anti-reflection film, and refractive index is 1.96 time, and anti-reflective effect is best.
Example 1
A is by the tubular type PECVD deposition of the crystalline silicon after making herbs into wool, diffusion, etching, and obtain high index of refraction silicon nitride film, PECVD parameters is: ammonia flow is 3000sccm, silane flow rate is 1000sccm, pressure is 200Pa, and radio-frequency power is 4000w, and sedimentation time is 190s.
After B obtains high index of refraction silicon nitride anti-reflection film, close silane flow rate 1.5 minutes, keep simultaneously ammonia flow and radio-frequency power constant.
C continues on the basis of high index of refraction antireflective film, again deposits the lower slightly silicon nitride anti-reflection film of refractive index.PECVD parameters is: ammonia flow is 3500sccm, and silane flow rate is 500sccm, and pressure is 200Pa, and radio-frequency power is 4000w, and sedimentation time is 350s.
D repeats step B.
E deposits low-refraction silicon nitride anti-reflection film on the basis of second layer silicon nitride anti-reflection film, and PECVD parameters is: ammonia flow is 3600sccm, and silane flow rate is 400sccm, and pressure is 200Pa, and radio-frequency power is 4000w, and sedimentation time is 300s.
The luminance factor of multilayer silicon nitride antireflective film produces line single-layer silicon nitride silicon and reduces 19%, and short circuit current improves 20mA, and open pressure and improve 2mV, final battery efficiency has the lifting of 0.1%.
Example 2
A is by the tubular type PECVD deposition of the crystalline silicon after making herbs into wool, diffusion, etching, and obtain high index of refraction silicon nitride film, PECVD parameters is: ammonia flow is 3200sccm, silane flow rate is 800sccm, pressure is 200Pa, and radio-frequency power is 4000w, and sedimentation time is 180s.
After B obtains high index of refraction silicon nitride anti-reflection film, close silane flow rate 1.5 minutes, keep simultaneously ammonia flow and radio-frequency power constant.
C continues on the basis of high index of refraction antireflective film, again deposits the lower slightly silicon nitride anti-reflection film of refractive index.PECVD parameters is: ammonia flow is 3500sccm, and silane flow rate is 500sccm, and pressure is 200Pa, and radio-frequency power is 4000w, and sedimentation time is 400s.
D repeats step B.
E deposits low-refraction silicon nitride anti-reflection film on the basis of second layer silicon nitride anti-reflection film, and PECVD parameters is: ammonia flow is 3700sccm, and silane flow rate is 400sccm, and pressure is 200Pa, and radio-frequency power is 4000w, and sedimentation time is 280s.
The luminance factor of multilayer silicon nitride antireflective film produces line single-layer silicon nitride silicon and reduces 23%, and short circuit current improves 60mA, and open pressure and improve 2mV, final battery efficiency has the lifting of 0.13%.
What finally illustrate is, above example is only unrestricted for illustration of technical scheme of the present invention, although with reference to preferred embodiments to invention has been detailed description, those of ordinary skill in the art is to be understood that, open pressure to modify to technical scheme of the present invention or equivalent replacement, and not departing from the spirit and scope of technical solution of the present invention, it all should be encompassed in right of the present invention.
Claims (3)
1. a preparation method for multilayer silicon nitride antireflective film, is characterized in that once carrying out as follows:
Crystalline silicon after making herbs into wool, diffusion, etching tubular type PECVD deposits by A, obtain high index of refraction silicon nitride film, PECVD parameters is: ammonia flow is 3000-4000sccm, silane flow rate is 800-1000sccm, pressure is 200Pa, radio-frequency power is 3500-4000w, and sedimentation time is 150-200s.
After B obtains high index of refraction silicon nitride anti-reflection film, close silane flow rate 1-2 minute, simultaneously keep ammonia flow and radio-frequency power constant.
C continues on the basis of high index of refraction antireflective film, again deposits the lower slightly silicon nitride anti-reflection film of refractive index.PECVD parameters is: ammonia flow is 3500-4500sccm, and silane flow rate is 500-800sccm, and pressure is 200Pa, and radio-frequency power is 3500-4000w, and sedimentation time is 350-400s.
D repeats step B.
E deposits low-refraction silicon nitride anti-reflection film on the basis of second layer silicon nitride anti-reflection film, PECVD parameters is: ammonia flow is 3800-4500sccm, and silane flow rate is 400-600sccm, and pressure is 200Pa, radio-frequency power is 3500-4000w, and sedimentation time is 250-300s.
2. a kind of multilayer silicon nitride membrane preparation method according to claim 1, is characterized in that: the refractive index of the silicon nitride anti-reflection film of preparation becomes production decline law from high to low.
3. a kind of multilayer silicon nitride membrane preparation method according to claim 1, is characterized in that: after prepared by every layer of silicon nitride anti-reflection film, need close silane flow rate 1-2 minute.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310305712.XA CN104300033A (en) | 2013-07-18 | 2013-07-18 | Preparation method of multilayer silicon nitride film |
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| CN201310305712.XA CN104300033A (en) | 2013-07-18 | 2013-07-18 | Preparation method of multilayer silicon nitride film |
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| CN201310305712.XA Pending CN104300033A (en) | 2013-07-18 | 2013-07-18 | Preparation method of multilayer silicon nitride film |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105951057A (en) * | 2016-01-11 | 2016-09-21 | 江西展宇新能源股份有限公司 | Method of preparing silicon nitride reflection-reducing film with plate-type PECVD |
| CN107731960A (en) * | 2017-10-16 | 2018-02-23 | 常州亿晶光电科技有限公司 | The preparation method of PERC cell backside silicon nitride multilayer films |
-
2013
- 2013-07-18 CN CN201310305712.XA patent/CN104300033A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105951057A (en) * | 2016-01-11 | 2016-09-21 | 江西展宇新能源股份有限公司 | Method of preparing silicon nitride reflection-reducing film with plate-type PECVD |
| CN107731960A (en) * | 2017-10-16 | 2018-02-23 | 常州亿晶光电科技有限公司 | The preparation method of PERC cell backside silicon nitride multilayer films |
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