CN203312325U

CN203312325U - Coating crystalline-silicon battery piece with resistance to PID effect

Info

Publication number: CN203312325U
Application number: CN201320292810XU
Authority: CN
Inventors: 张良; 姚剑; 李良
Original assignee: Zhenjiang Daqo Solar Co Ltd
Current assignee: Zhenjiang Daqo Solar Co Ltd
Priority date: 2013-05-27
Filing date: 2013-05-27
Publication date: 2013-11-27
Anticipated expiration: 2023-05-27

Abstract

The utility model relates to a photovoltaic solar battery piece structure, and specifically relates to a coating crystalline-silicon battery piece with the resistance to a PID effect. The battery piece consists of an Si substrate layer, a lower SiNx film which is deposited on the Si substrate layer and has a higher refractive index, an upper SiNx film which is deposited on the lower SiNx film and has a lower refractive index, and an SiO2 film which is deposited on the upper SiNx film. According to the utility model, three coating films SiNx / SiNx / SiO2 which are deposited on the surface of the battery piece are used for replacing a double-layer SiNx film with a conventional structure, thereby eliminating the PID effect effectively and improving conversion efficiency of the crystalline-silicon battery piece.

Description

Crystalline silicon battery plate with anti-PID effect plated film

Technical field

The utility model relates to a kind of photovoltaic solar cell chip architecture, specifically a kind of crystalline silicon battery plate with anti-PID effect plated film.

Background technology

In the crystal silicon solar energy battery production process, PECVD(plasma vapor deposition method) be the method that forms a kind of large-scale industry utilization of antireflective film.General antireflective film mainly comprises: single double-deck SiN _x(silicon nitride) film, SiO ₂(silicon dioxide) film, SiO ₂/ SiN _xDuplicature etc.SiO ₂Have outstanding light transmission features, but due to SiO ₂Formation need at high temperature (over 800 ℃) to realize.And polysilicon can be activated when high temperature owing in body, having a large amount of dislocations and impurity defect, cause the cell piece quality to descend.And SiN _x(silicon nitride) film is due to its good passivation effect, and can be by PECVD(plasma gaseous phase deposition method) realize low temperature depositing, thus realized industrialized large-scale promotion.But SiN _x(silicon nitride) film is not good for the absorption of short-wave band sunlight, the formation to a certain extent current crystalline silicon average efficiency improved inhibition.The PID effect is mainly concerned with the useful life of assembly solar cell.So-called PID effect is commonly considered as the Na of battery panel components soda lime glass packaging material the inside ⁺Ion under extreme conditions as, temperature is 85 ℃, relative humidity is 85%, assembly housing ground connection, and apply reverse 1000V voltage moves to a kind of effect that the cell piece surface causes cell piece to lose efficacy.Existing photovoltaic solar cell sheet is subjected to the PID effects larger, has limited the raising of solar battery sheet efficiency.

Summary of the invention

Technical problem to be solved in the utility model is, a kind of ability that can improve the anti-PID effect of cell piece is provided, and improves the crystalline silicon battery plate of the anti-PID effect of having of battery efficiency plated film.

Crystalline silicon battery plate with anti-PID effect plated film of the present utility model by the Si substrate layer, be deposited on the higher SiN of lower floor of refractive index on the Si substrate layer _xFilm, be deposited on the SiN of lower floor _xThe upper strata SiN that refractive index on film is lower _xFilm, be deposited on upper strata SiN _xSiO on film ₂Film forms.

The formation of current known PID effect is mainly because the metal Na ion in soda lime glass in the crystal silicon cell chip module passes the surface that EVA arrives cell piece under damp and hot environment, on the surface of cell piece, form the gathering of metal ion, cause forbidden band to change, thereby cause cell piece to lose efficacy.The utility model passes through at cell piece surface deposition SiNx/SiNx/SiO ₂The SiNx duplicature of triple-layer coating replace traditional structural.Due to SiO ₂Film is for metal ion Na ⁺The barrier effect that ion has, prevent that metal ion from arriving battery surface, thereby can effectively eliminate the PID effect.Through the actual proof that detects, cell piece reflectivity of the present utility model declines to a great extent, especially aspect shortwave, can effectively reduce reflection of light, improve the response current of light at short-wave band, improve the crystal silicon cell short circuit current, and then improve the transformation efficiency of crystalline silicon battery plate.

The accompanying drawing explanation

Fig. 1 is cross section structure schematic diagram of the present utility model.

Embodiment

As shown in the figure, this crystalline silicon battery plate with anti-PID effect plated film by Si substrate layer 1, be deposited on the higher SiN of lower floor of refractive index on the Si substrate layer _xFilm 2, be deposited on the SiN of lower floor _xThe upper strata SiN that refractive index on film is lower _xFilm 3, be deposited on upper strata SiN _xSiO on film ₂Film 4 forms.

Below with the embodiment that manufactures the utility model cell piece on flat direct method silicon nitride filming equipment, elaborate.Manufacturing process is as follows:

Step B1, pass into N in reactor ₂Make silicon chip reach constant temperature, N ₂Flow c1 scope 20000 sccm/min; Temperature c2 is 350 ℃ (it is consistent with this step that the following steps temperature all keeps);

Step B2, NH ₃Flow c3 is 400 sccm/min, N ₂Flow c4 is 20000 sccm/min, SiH ₄Flow c5 is 2000 sccm/min, and controlled pressure c6 is 1.3 Torr;

Step B3, open radio-frequency power supply and carry out ground floor SiNx plated film, and radio-frequency power c7 is 8000 W, and time c8 is 21 s;

Step B4, then close radio-frequency power supply, passes into second layer SiNx plated film desired gas, passes into NH ₃Flow c9 is 350 sccm/min, N ₂Flow c10 is 15000 sccm/min, SiH ₄Flow c11 is 1700 sccm/min, and reaching constant voltage c12 is 1.3 Torr;

Step B5, open radio-frequency power supply and carry out second layer SiNx plated film, and radio-frequency power c13 is 8000 W, and time c14 is 32 s;

Step B6, close radio-frequency power supply, and the residual gas in reaction cavity is extracted out, is follow-up silicon dioxide SiO ₂Deposition prepare;

Step B7, pass into the silicon dioxide deposited gas, NH ₃Flow c15 is 7000 sccm/min, N ₂Flow c16 is 10000 sccm/min, SiH ₄Flow c17 is 2100 sccm/min, and reaching constant voltage c18 is 1.0 Torr

Step B6, open radio-frequency power supply, and radio-frequency power c19 is 5000 W, and time c19 is 21 s; Carry out silicon dioxide SiO ₂Thin film deposition.The final product that obtains.

Claims

1. crystalline silicon battery plate with anti-PID effect plated film is characterized in that: it by the Si substrate layer, be deposited on the SiN of lower floor on the Si substrate layer _xFilm, be deposited on the SiN of lower floor _xUpper strata SiN on film _xFilm, be deposited on upper strata SiN _xSiO on film ₂Film forms.