CN110965044A - Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof - Google Patents

Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof Download PDF

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CN110965044A
CN110965044A CN201910846329.2A CN201910846329A CN110965044A CN 110965044 A CN110965044 A CN 110965044A CN 201910846329 A CN201910846329 A CN 201910846329A CN 110965044 A CN110965044 A CN 110965044A
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layer
refractive index
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徐义兰
林纲正
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Zhejiang Aiko Solar Energy Technology Co Ltd
Guangdong Aiko Technology Co Ltd
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Guangdong Aiko Technology Co Ltd
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Abstract

The invention discloses a dielectric passivation film for reducing the electroattenuation of a PERC battery and a preparation method thereof2O3SiOx, SiNx, wherein SiNx is formed twice, including: in a reaction chamber with the temperature of 410-425 ℃, introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) to form a first layer of SiNx with the refractive index less than 2.24 percent; in a reaction cavity with the temperature of 435-; the refractive index of the first layer of SiNx is larger than that of the second layer of SiNxThe refractive index. The method can effectively reduce CID, has low cost and moderate technical difficulty, and is easy for industrial mass production.

Description

Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof
Technical Field
The invention relates to the field of solar cell manufacturing, in particular to a dielectric passivation film for reducing the electroattenuation of a PERC cell and a preparation method thereof.
Background
The crystalline silicon solar cell has the characteristics of good stability, high efficiency and the like, and becomes a mainstream product in the current photovoltaic market. However, the P-type crystalline silicon solar cell has a phenomenon that the cell efficiency is greatly attenuated under illumination or power-on conditions, and further development of the industry is severely limited. Under the research and study of scientists, in 1973, fischer et al proposed that the Light Induced Degradation (LID) concept, i.e., the cell efficiency of a p-type cell is greatly degraded after being illuminated in a practical environment, and the Light induced degradation is mainly characterized in that the output power of a photovoltaic module is greatly reduced in the first few days of the initial use, but then is stabilized. The main reason for this phenomenon is that silicon wafers containing boron and oxygen are compounded to different degrees after being illuminated, and the minority carrier lifetime is reduced. The light attenuation test conditions are that the grade of a light attenuation box is not lower than BBA, the spectrum AM1.5, the irradiance is 900-. Subsequently, KlausRamspeck et al suggested in 2012 that the cell attenuation of P-type cell sheets increased under high Temperature conditions, i.e., heat assisted attenuation (Light insulated Temperature attenuation LeTID), with test conditions of 75-85 degrees Celsius, irradiance of 1000w/m2, and test time of 200-. Because the leitd test condition is too long, it is not favorable for the component end to obtain the data result in time, so the Current injective attenuation (CID) is introduced, and the Current electroattenuation is mainly expressed as the power attenuation caused in the process of carrier injection when the p-type battery and the component apply forward bias under the dark condition. The test conditions, current 1-3A, temperature 100-200 ℃ and time 8-16 h. The detection of CID is increasingly recognized by a wide range of researchers, and the mechanism thereof is explored.
Through a great deal of research, people have certain knowledge on CID (CID) attenuation mechanisms of boron-doped P-type crystalline silicon solar cells, and propose the following attenuation mechanisms: firstly, generating an impurity recombination center by excessive H; secondly, compounding centers of metal impurities (Cu, Fe, Ni and the like) in the silicon chip substrate; a B-O defect complex, which traps minority carriers to cause attenuation; and fourthly, the passivation and attenuation problems of the dielectric film layer are solved.
In view of the above problems, the currently proposed methods for reducing CID mainly focus on optimizing and controlling raw materials and silicon wafers, such as: (1) the method adopts the silicon chip with low oxygen and long minority carrier lifetime to reduce the boron or oxygen content, can effectively reduce CID, but has overhigh cost; (2) by using the gallium-doped sheet or preparing the N-type battery to replace the boron-doped P-type battery, the method avoids the formation of a B-O defect complex, but has great technical difficulty and is not suitable for industrial mass production; (3) the sintering temperature of the battery is adjusted, the concentrations of boron atoms and oxygen atoms and the diffusion movement of the boron atoms and the oxygen atoms are controlled to realize the conversion of boron-oxygen composite defects to regeneration recovery states, and the reduction effect of the method is not obvious. With the increasing demand for the photoelectric conversion efficiency of P-type cells, there is an urgent need to improve the fabrication process and structure of solar cells to reduce CID to meet the demand for high photoelectric conversion efficiency.
Disclosure of Invention
The invention aims to solve the technical problem of providing a dielectric passivation film for reducing the electroattenuation of a PERC battery and a preparation method thereof, which can effectively reduce CID, have low cost and moderate technical difficulty and are easy for industrial mass production.
In order to solve the technical problem, the invention provides a preparation method of a dielectric passivation film for reducing the electroattenuation of a PERC battery, and Al is sequentially deposited on the back of a silicon wafer2O3SiOx, SiNx, wherein SiNx is formed twice, including:
in a reaction chamber with the temperature of 410-425 ℃, introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) to form a first layer of SiNx with the refractive index less than 2.24 percent;
in a reaction cavity with the temperature of 435-;
the refractive index of the first layer of SiNx is larger than that of the second layer of SiNx.
As an improvement of the scheme, in a reaction cavity with the temperature of 420 ℃, the proportion of the introduced ammonia gas to the silane is (3-4) to (0.5-1.2), and a first layer of SiNx with the refractive index less than 2.24% is formed;
in a reaction cavity with the temperature of 440 ℃, the ratio of ammonia gas to silane is (6.5-7.2) to (0.5-1.0), and a second SiNx layer with the refractive index less than 2.20% is formed.
As an improvement of the scheme, the plasma power of the reaction cavity of the first layer of SiNx and the second layer of SiNx is 5000-.
In an improvement of the above, the refractive index of the first layer SiNx is 0.1-5% higher than that of the second layer SiNx.
As an improvement of the scheme, the refractive index of the first layer of SiNx is 2.20% -2.24%, and the refractive index of the second layer of SiNx is 2.16% -2.19%;
or the refractive index of the first SiNx layer is 2.18% -2.20%, and the refractive index of the second SiNx layer is 2.12% -2.16%;
or the refractive index of the first SiNx layer is 2.16% -2.19%, and the refractive index of the second SiNx layer is 2.10% -2.14%.
As an improvement of the scheme, the silicon oxide layer is carried out in a reaction chamber with the temperature of 385-420 ℃, the plasma power of 5000-6500W, the pressure of 800-1200mTor and the deposition duty ratio (1-3): 150ms, the flow rate of laughing gas is 4000-5000sccm, the flow rate of silane is 100-200sccm and the deposition time is 210-250 s.
Correspondingly, the invention discloses a dielectric passivation film for reducing the electrodegradation of the PERC battery, which sequentially comprises Al2O3SiOx and SiNx, wherein the SiNx comprises a first SiNx layer and a second SiNx layer,
the first layer of SiNx is formed by introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) in a reaction chamber at the temperature of 410-;
the second SiNx layer is formed by introducing ammonia gas and silane in a ratio of (6-7.5) to (0.5-1.5) in a reaction chamber at 435-;
the refractive index of the first layer of SiNx is larger than that of the second layer of SiNx.
In an improvement of the above, the refractive index of the first layer SiNx is 0.1-5% higher than that of the second layer SiNx.
As an improvement of the scheme, the refractive index of the first layer of SiNx is 2.20% -2.24%, and the refractive index of the second layer of SiNx is 2.16% -2.19%;
or the refractive index of the first SiNx layer is 2.18% -2.20%, and the refractive index of the second SiNx layer is 2.12% -2.16%;
or the refractive index of the first SiNx layer is 2.16% -2.19%, and the refractive index of the second SiNx layer is 2.10% -2.14%.
As an improvement of the scheme, the first layer of SiNx is formed by introducing ammonia gas and silane in a ratio of (3-4) to (0.5-1.2) in a reaction cavity at the temperature of 420 ℃, and the refractive index of the first layer of SiNx is less than 2.24%;
the second SiNx layer is formed by introducing ammonia gas and silane in a ratio of (6.5-7.2) to (0.5-1.0) in a reaction chamber at 440 deg.C, and has a refractive index of less than 2.20%.
The implementation of the invention has the following beneficial effects:
the dielectric passivation film comprises an aluminum oxide passivation layer, a silicon oxide passivation layer and a silicon nitride layer which are sequentially attached to a silicon substrate from bottom to top, wherein the silicon oxide passivation layer has good compactness, the minority carrier recombination rate of the back surface of the silicon wafer can be reduced, the open-circuit voltage and the short-circuit current of a battery are improved, and metal impurities can be effectively prevented from entering a silicon body. And then, plasma deposition equipment is utilized, a SiNx film layer with a lower refractive index is deposited by controlling the proportion of silane and ammonia gas, the absorption of a long wave band of light can be enhanced by using the silicon nitride film layer with the low refractive index, the extinction loss is reduced, the light utilization rate of a battery is improved, meanwhile, the content of hydrogen atoms in the SiNx with the low refractive index is increased, the thickness of the SiNx is increased, the passivation effect of a dielectric film is enhanced, and the passivation attenuation phenomenon of the dielectric film is weakened.
Therefore, the invention reduces CID by enhancing the passivation of the dielectric layer film, has better passivation effect on defects, dangling bonds and boron-oxygen bonds, can prevent metal impurities from entering a silicon organism, can obviously reduce CID attenuation, and has the advantages of simple preparation method, simple and convenient operation, low cost, moderate technical difficulty, high compatibility and easy industrial mass production.
Drawings
FIG. 1 is a schematic illustration of a dielectric passivation film for reducing electrodegradation in a PERC cell in accordance with the present invention;
fig. 2 is a box plot of the variation of the electrical attenuation values of the first to fourth embodiments of the present invention and the conventional back film process.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below.
The invention provides a preparation method of a dielectric passivation film for reducing the electrodegradation of a PERC battery, which is applied to a B-doped substrate P-type monocrystalline silicon wafer (10)-16cm-1) Performing texturing, diffusion, SE laser, etching and normal-pressure annealing, and then performing back PERC coating by using plasma deposition equipment.
The back PERC coating refers to the sequential deposition of Al on the back of a silicon wafer2O3SiOx, SiNx, wherein SiNx is formed twice, including:
in a reaction chamber with the temperature of 410-425 ℃, introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) to form a first layer of SiNx with the refractive index less than 2.24 percent;
in a reaction cavity with the temperature of 435-;
the refractive index of the first layer of SiNx is larger than that of the second layer of SiNx.
The plasma power of the reaction cavity of the first SiNx layer and the second SiNx layer is 5000-.
Specifically, in the deposition process of the SiNx film layer, the temperature, the ratio of introduced ammonia gas to silane and the deposition duty ratio have great influence on the passivation effect of the finally enhanced dielectric passivation film and the performance of the solar cell.
1. Temperature: the temperature of the first SiNx layer is 410-425 ℃, preferably 415-425 ℃, further preferably 420 ℃, and the temperature of the second SiNx layer is 435-445 ℃, preferably 438-443 ℃, further preferably 440 ℃, so that the silicon nitride film with good compactness and uniform film color can be obtained at a lower temperature, and the effects of reducing the temperature rise time and improving the productivity are achieved. The deposition temperature of the first layer of SiNx is higher than that of the second layer of SiNx, the effect is that the compactness and uniformity of the first layer of silicon nitride film are further optimized while the second layer of silicon nitride is deposited, meanwhile, the defects of the film layer are repaired, and the surface recombination effect is reduced.
2. Introducing ammonia gas and silane in proportion: according to the invention, the SiNx film layer with a lower refractive index is deposited by controlling the ratio of silane and ammonia gas, the absorption of a long wave band of light can be enhanced by using the silicon nitride film layer with a low refractive index, the extinction loss is reduced, the light utilization rate of a battery is improved, meanwhile, the hydrogen atom content in the SiNx film layer with a low refractive index is increased, the SiNx thickness is increased, the passivation effect of a dielectric film is enhanced, and the passivation attenuation phenomenon of the dielectric film is weakened.
Specifically, the ratio of the introduced ammonia gas to silane in the first SiNx layer is (3-5) - (0.5-2), and the refractive index of the first SiNx layer is less than 2.24%. The ratio of ammonia gas introduced into the second SiNx layer to silane is (6-7.5) - (0.5-1.5), the refractive index of the second SiNx layer is less than 2.20%, and the silicon nitride film with a lower refractive index deposited by the method can play an excellent passivation role, further enhance the long-wave response of the solar cell and weaken the electroattenuation phenomenon of the solar cell. The first layer of SiNx and the second layer of SiNx are conducted under different proportions of ammonia and silane, so that SiNx with different refractive indexes is formed, the problem of optical matching degree between dielectric film layers is solved, extinction loss is reduced, and optical loss caused by optical mismatch is easily caused if the difference of the refractive indexes between the film layers is large, and the overall efficiency of the solar cell is low. .
3. Deposition duty cycle: in general, the surface roughness and hardness of the film change with the change of duty ratio, and the microstructure of the film also changes with the change of duty ratio, the first layer SiNx and the second layer SiNx are deposited under the condition that the duty ratio is (1-10): 50-60 ms, and the SiNx with a cubic structure is obtained, and has the effects of uniform structure, high mechanical strength, wear resistance and oxidation resistance. In addition, the plasma power and the pressure of the reaction cavity can also influence the passivation effect of the dielectric film, the plasma power of the invention is 5000-.
Preferably, in a reaction cavity with the temperature of 420 ℃, introducing ammonia gas and silane in a ratio of (3-4) to (0.5-1.2) to form a first layer of SiNx with the refractive index less than 2.24%; in a reaction cavity with the temperature of 440 ℃, the ratio of ammonia gas to silane is (6.5-7.2) to (0.5-1.0), and a second SiNx layer with the refractive index less than 2.20% is formed.
Preferably, the refractive index of the first layer of SiNx is 0.1-5% greater than that of the second layer of SiNx, so that the dielectric layer passivation film has an antireflection film effect. The refractive index of the SiNx film is gradually reduced from inside to outside, so that incident light is refracted for multiple times in the film layer, and the absorption of the solar cell on short-wave light is enhanced.
As a more preferable embodiment of the refractive index of SiNx:
the refractive index of the first SiNx layer is 2.20% -2.24%, and the refractive index of the second SiNx layer is 2.16% -2.19%;
or the refractive index of the first SiNx layer is 2.18% -2.20%, and the refractive index of the second SiNx layer is 2.12% -2.16%;
or the refractive index of the first SiNx layer is 2.16% -2.19%, and the refractive index of the second SiNx layer is 2.10% -2.14%.
Furthermore, the silicon oxide layer is carried out in a reaction chamber with the temperature of 385-. The silicon oxide passivation layer has good compactness, can reduce the minority carrier recombination rate of the back surface of the silicon wafer, improves the open-circuit voltage and the short-circuit current of the battery, and can effectively prevent metal impurities from entering a silicon body.
Correspondingly, as shown in fig. 1, the invention discloses a dielectric passivation film for reducing the electroattenuation of a PERC battery, which sequentially comprises Al on the back of a silicon wafer 102O31. SiOx 2, SiNx3, wherein SiNx3 includes a first layer of SiNx31 and a second layer of SiNx32,
the first layer of SiNx31 is formed by introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) in a reaction chamber at the temperature of 410-425 ℃, and the refractive index of the first layer of SiNx31 is less than 2.24%;
the second SiNx32 layer is formed by introducing ammonia gas and silane in the ratio of (6-7.5) to (0.5-1.5) in a reaction chamber at 435-445 deg.C, and has a refractive index of less than 2.20%;
the refractive index of the first layer SiNx31 is greater than that of the second layer SiNx 32.
The dielectric passivation film comprises an aluminum oxide passivation layer, a silicon oxide passivation layer and a silicon nitride layer which are sequentially attached to a silicon substrate from bottom to top, wherein SiOx 2 has good compactness, can reduce the minority carrier recombination rate of the back surface of the silicon wafer, improves the open-circuit voltage and the short-circuit current of a battery, and can effectively prevent metal impurities from entering a silicon body. And then, plasma deposition equipment is utilized, SiNx3 with a low refractive index is deposited by controlling the proportion of silane and ammonia gas, a silicon nitride film layer with a low refractive index can be used for enhancing the absorption of a long wave band of light, the extinction loss is reduced, the light utilization rate of a battery is improved, meanwhile, the content of hydrogen atoms in the SiNx with the low refractive index is increased, the thickness of the SiNx is increased, the passivation effect of a dielectric film is enhanced, and the passivation attenuation phenomenon of the dielectric film is weakened.
Preferably, the first layer of SiNx is formed by introducing ammonia gas and silane in a ratio of (3-4) to (0.5-1.2) in a reaction cavity at the temperature of 420 ℃, and the refractive index of the first layer of SiNx is less than 2.24%; the second SiNx layer is formed by introducing ammonia gas and silane in a ratio of (6.5-7.2) to (0.5-1.0) in a reaction chamber at 440 deg.C, and has a refractive index of less than 2.20%.
Preferably, the refractive index of the first layer SiNx31 is 0.1-5% greater than that of the second layer SiNx 32.
More preferably, the refractive index of the first layer of SiNx31 is 2.20% -2.24%, and the refractive index of the second layer of SiNx32 is 2.16% -2.19%;
or the refractive index of the first layer of SiNx31 is 2.18% -2.20%, and the refractive index of the second layer of SiNx32 is 2.12% -2.16%;
or the refractive index of the first layer of SiNx31 is 2.16% -2.19%, and the refractive index of the second layer of SiNx32 is 2.10% -2.14%.
The first layer of SiNx is formed by introducing ammonia gas and silane in a ratio of (3-4) to (0.5-1.2) in a reaction chamber at the temperature of 420 ℃, and the refractive index of the first layer of SiNx is less than 2.24%; the second SiNx layer is formed by introducing ammonia gas and silane in a ratio of (6.5-7.2) to (0.5-1.0) in a reaction chamber at 440 deg.C, and has a refractive index of less than 2.20%.
In conclusion, the CID is reduced by enhancing the passivation of the dielectric layer film, the passivation method has better passivation effect on defects, dangling bonds and boron-oxygen bonds, can prevent metal impurities from entering a silicon body, can obviously reduce CID attenuation, and is simple in preparation method, simple and convenient to operate, low in cost, moderate in technical difficulty, high in compatibility and easy for industrial mass production.
The invention is further illustrated by the following specific examples
Example one
P-type monocrystalline silicon wafer (10) on B-doped substrate-16cm-1) After texturing, diffusion, SE laser, etching and normal pressure annealing, back PERC coating is carried out, comprising the following steps:
(1) deposition of Al2O31；
(2) Deposition of SiOx 2: the SiOx 2 process is carried out in a reaction chamber with the temperature of 400 ℃, the plasma power of 6000W, the pressure of 1000mTor and the deposition duty ratio of 2:150ms, the flow rate of laughing gas is 4500sccm, the flow rate of silane is 150sccm, and the deposition time is 220s-240 s;
(3) depositing a first layer of SiNx 31: the first layer of SiNx31 is carried out in a reaction chamber with the temperature of 420 ℃, the plasma power of 5500W, the pressure of 1600mTor and the deposition duty ratio of 2:60ms, the ratio of introduced ammonia to silane is 3.6:0.93, and the refractive index is 2.18% -2.20%.
(3) Deposition of a second layer of SiNx 32: the process of the SiNx32 of the second layer is carried out in a reaction cavity with the temperature of 440 ℃, the plasma power of 5500W, the pressure of 1600mTor and the deposition duty ratio of 2:60ms, the ratio of introduced ammonia to silane is 6.8:0.87, and the refractive index is 2.12% -2.16%.
Example two
P-type monocrystalline silicon wafer (10) on B-doped substrate-16cm-1) After texturing, diffusion, SE laser, etching and normal pressure annealing, back PERC coating is carried out, comprising the following steps:
(1) deposition of Al2O31；
(2) Deposition of SiOx 2: the SiOx 2 process is carried out in a reaction chamber with the temperature of 400 ℃, the plasma power of 6000W, the pressure of 1000mTor and the deposition duty ratio of 2:150ms, the flow rate of laughing gas is 4500sccm, the flow rate of silane is 150sccm, and the deposition time is 220s-240 s;
(3) depositing a first layer of SiNx 31: the first layer of SiNx31 is carried out in a reaction chamber with the temperature of 420 ℃, the plasma power of 5500W, the pressure of 1600mTor and the deposition duty ratio of 2:60ms, the ratio of introduced ammonia to silane is 3.7:0.90, and the refractive index is 2.16% -2.19%.
(3) Deposition of a second layer of SiNx 32: the process of the SiNx32 of the second layer is carried out in a reaction cavity with the temperature of 440 ℃, the plasma power of 5500W, the pressure of 1600mTor and the deposition duty ratio of 2:60ms, the ratio of introduced ammonia to silane is 6.9:0.83, and the refractive index is 2.10% -2.14%.
EXAMPLE III
P-type monocrystalline silicon wafer (10) on B-doped substrate-16cm-1) After texturing, diffusion, SE laser, etching and normal pressure annealing, back PERC coating is carried out, comprising the following steps:
(1) deposition of Al2O31；
(2) Deposition of SiOx 2: the SiOx 2 process is carried out in a reaction chamber with the temperature of 390 ℃, the plasma power of 6000W, the pressure of 1100mTor and the deposition duty ratio of 1:150ms, the flow rate of laughing gas is 4500sccm, the flow rate of silane is 180sccm, and the deposition time is 220s-240 s;
(3) depositing a first layer of SiNx 31: the first layer of SiNx31 is carried out in a reaction chamber with the temperature of 415 ℃, the plasma power of 6000W, the pressure of 1700mTor and the deposition duty ratio of 3:60ms, the ratio of introduced ammonia to silane is 3.8:1.05, and the refractive index is 2.17% -2.20%.
(3) Deposition of a second layer of SiNx 32: the process of the second layer of SiNx32 is carried out in a reaction cavity with the temperature of 438 ℃, the plasma power of 6000W, the pressure of 1700mTor and the deposition duty ratio of 3:60ms, the ratio of introduced ammonia to silane is 6.7:0.95, and the refractive index is 2.10% -2.15%.
Example four
P-type monocrystalline silicon wafer (10) on B-doped substrate-16cm-1) After texturing, diffusion, SE laser, etching and normal pressure annealing, back PERC coating is carried out, comprising the following steps:
(1) deposition of Al2O31；
(2) Deposition of SiOx 2: the SiOx 2 process is carried out in a reaction chamber with the temperature of 400 ℃, the plasma power of 6000W, the pressure of 1000mTor and the deposition duty ratio of 2:150ms, the flow rate of laughing gas is 4500sccm, the flow rate of silane is 150sccm, and the deposition time is 220s-240 s;
(3) depositing a first layer of SiNx 31: the first layer of SiNx31 is carried out in a reaction chamber with the temperature of 420 ℃, the plasma power of 5500W, the pressure of 1600mTor and the deposition duty ratio of 2:60ms, the ratio of introduced ammonia to silane is 3.5:1.0, and the refractive index is 2.20% -2.24%.
(3) Deposition of a second layer of SiNx 32: the process of the SiNx32 of the second layer is carried out in a reaction cavity with the temperature of 440 ℃, the plasma power of 5500W, the pressure of 1600mTor and the deposition duty ratio of 5:60ms, the ratio of introduced ammonia to silane is 6.8:0.97, and the refractive index is 2.16% -2.20%.
The relevant test data for examples one to four are as follows:
Comment Output(pcs) Uoc(V) Isc(A) Rs(Ω) Rsh FF Eta Irev2(A)
conventional process 200 0.6765 10.175 0.00362 862 80.87 22.091％ 0.032
Example one 200 0.6770 10.180 0.00358 689 80.94 22.103％ 0.035
Example II 200 0.6771 10.200 0.00355 711 81.05 22.147％ 0.043
EXAMPLE III 200 0.6781 9.808 0.00353 807 81.24 22.116％ 0.030
Example IV 200 0.6779 10.101 0.00344 874 81.47 22.088％ 0.047
From the above, the first embodiment and the first embodiment have the advantages that the silicon oxide layer is deposited, the ratio of gaseous ammonia to silane is adjusted, and the silicon nitride composite layer with the low refractive index is deposited, so that the passivation effect of the dielectric film is enhanced, and the passivation attenuation of the dielectric film is weakened. As shown in fig. 2, compared to the conventional process, the first to fourth embodiments of the present invention can effectively reduce CID.
While the invention has been described in connection with what is presently considered to be the most practical and preferred embodiment, it is to be understood that the invention is not to be limited to the disclosed embodiment, but on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (10)

1. A preparation method of a dielectric passivation film for reducing the electroattenuation of a PERC battery is characterized in that Al is sequentially deposited on the back of a silicon wafer2O3SiOx, SiNx, wherein SiNx is formed twice, including:
in a reaction chamber with the temperature of 410-425 ℃, introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) to form a first layer of SiNx with the refractive index less than 2.24 percent;
in a reaction cavity with the temperature of 435-;
the refractive index of the first layer of SiNx is larger than that of the second layer of SiNx.
2. The method of claim 1, wherein the ratio of ammonia to silane (3-4): (0.5-1.2) is introduced into the reaction chamber at a temperature of 420 ℃ to form a first layer of SiNx having a refractive index of less than 2.24%;
in a reaction cavity with the temperature of 440 ℃, the ratio of ammonia gas to silane is (6.5-7.2) to (0.5-1.0), and a second SiNx layer with the refractive index less than 2.20% is formed.
3. The method as claimed in claim 2, wherein the plasma power of the reaction chamber of the first layer of SiNx and the second layer of SiNx is 5000-.
4. The method of claim 1 or 2, wherein the refractive index of the first layer of SiNx is 0.1-5% greater than the refractive index of the second layer of SiNx.
5. The method of claim 4, wherein the refractive index of the first layer of SiNx is 2.20% -2.24%, and the refractive index of the second layer of SiNx is 2.16% -2.19%;
or the refractive index of the first SiNx layer is 2.18% -2.20%, and the refractive index of the second SiNx layer is 2.12% -2.16%;
or the refractive index of the first SiNx layer is 2.16% -2.19%, and the refractive index of the second SiNx layer is 2.10% -2.14%.
6. The method as claimed in claim 1, wherein the silicon oxide layer is formed in a reaction chamber with a temperature of 385-420 ℃, a plasma power of 5000-6500W, a pressure of 800-1200mTor, and a deposition duty ratio (1-3) (150) ms, and the flow rate of laughing gas is 4000-5000sccm, the flow rate of silane is 100-200sccm, and the deposition time is 210-250 s.
7. A dielectric passive film for reducing the electroattenuation of a PERC battery is characterized by sequentially comprising Al2O3SiOx and SiNx, wherein the SiNx comprises a first SiNx layer and a second SiNx layer,
the first layer of SiNx is formed by introducing ammonia gas and silane in a ratio of (3-5) to (0.5-2) in a reaction chamber at the temperature of 410-;
the second SiNx layer is formed by introducing ammonia gas and silane in a ratio of (6-7.5) to (0.5-1.5) in a reaction chamber at 435-;
the refractive index of the first layer of SiNx is larger than that of the second layer of SiNx.
8. The dielectric passivation film of claim 7, wherein the refractive index of the first layer of SiNx is 0.1-5% greater than the refractive index of the second layer of SiNx.
9. The dielectric passivation film for reducing electroattenuation of a PERC cell of claim 7, wherein said first layer of SiNx has a refractive index of 2.20% -2.24%, and said second layer of SiNx has a refractive index of 2.16% -2.19%;
or the refractive index of the first SiNx layer is 2.18% -2.20%, and the refractive index of the second SiNx layer is 2.12% -2.16%;
or the refractive index of the first SiNx layer is 2.16% -2.19%, and the refractive index of the second SiNx layer is 2.10% -2.14%.
10. The dielectric passivation film for reducing the electroattenuation of a PERC cell of claim 7, wherein said first layer of SiNx is formed by introducing ammonia gas and silane at a ratio of (3-4) to (0.5-1.2) in a reaction chamber at a temperature of 420 ℃, and has a refractive index of < 2.24%;
the second SiNx layer is formed by introducing ammonia gas and silane in a ratio of (6.5-7.2) to (0.5-1.0) in a reaction chamber at 440 deg.C, and has a refractive index of less than 2.20%.
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