CN115020539A - PERC battery back structure, preparation process and PERC battery - Google Patents
PERC battery back structure, preparation process and PERC battery Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 100
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 100
- 239000010703 silicon Substances 0.000 claims abstract description 100
- 239000007789 gas Substances 0.000 claims abstract description 99
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 78
- 229910052796 boron Inorganic materials 0.000 claims abstract description 78
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 52
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 35
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 35
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000001301 oxygen Substances 0.000 claims abstract description 28
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 28
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 36
- 229910000077 silane Inorganic materials 0.000 claims description 36
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 239000001272 nitrous oxide Substances 0.000 claims description 8
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 6
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 6
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention is suitable for the technical field of solar cells and provides a PERC cell back structure, a preparation process and a PERC cell, wherein the preparation process of the PERC cell back structure comprises the following steps: placing the pretreated silicon wafer into deposition equipment; depositing an aluminum oxide layer on the back of the silicon wafer; introducing silicon source gas, oxygen source gas and boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer; forming a silicon nitride layer over the boron-containing silicon oxide layer; performing laser grooving on the back of the silicon wafer, and diffusing the boron-containing silicon oxide layer at the laser grooving position on the back of the silicon wafer to form a p + doped region; and screen-printing a back electrode which is contacted with the p + doped region on the back of the silicon wafer. According to the preparation process of the PERC cell back structure, the boron source gas is introduced to generate the boron-containing silicon oxide layer, and laser energy in the back laser grooving process is utilized to enable part of boron elements in the boron-containing silicon oxide layer to diffuse into a silicon wafer to form a p + doped region.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a PERC cell back structure, a preparation process and a PERC cell.
Background
With the increasing decay of fossil fuels, a new clean, pollution-free and sustainable energy source is sought, and solar energy is undoubtedly the most common and clean renewable energy source in the field of vision. A solar cell is a device that directly converts light energy into electric energy using a photovoltaic effect. Technological advances have led to the development of solar cells, which have led to the derivation of PERC solar cells with local contact back passivation, which have received much attention in the industry due to their excellent conversion efficiency. The core of the PERC battery is that the backlight surface of a silicon wafer is covered by an aluminum oxide or silicon oxide film, so that the effects of passivating the surface and improving long-wave response are achieved, and the conversion efficiency of the battery is improved. The preparation process of the traditional PERC battery back structure mainly comprises the steps of depositing aluminum oxide on the back of a silicon wafer, depositing silicon oxide on the back, depositing silicon nitride on the back, performing laser grooving on the back, and performing screen printing on a back electrode.
In the prior art, the back structure of the PERC cell generally includes an aluminum oxide layer, a silicon nitride layer, and a back electrode, the aluminum oxide layer, the silicon oxide layer, and the silicon nitride layer are sequentially disposed on the back of the silicon wafer from top to bottom, and the back electrode passes through the aluminum oxide layer, the silicon oxide layer, and the silicon nitride layer to form ohmic contact with the silicon wafer. In order to enhance the passivation effect of the back surface, in the prior art, a p + doped region is formed at a contact position between a silicon wafer and a back electrode, so as to form a high-low junction structure similar to the front surface of a cell, thereby improving the conversion efficiency of the cell. However, in the prior art, the p + doping region is prepared by printing boron source slurry at the back laser grooving position, and a boron source slurry printing process needs to be added on the basis of the traditional preparation process of the back structure of the PERC cell, so that the preparation process of the back structure of the PERC cell is complex and the implementation cost is high.
Disclosure of Invention
The invention provides a preparation process of a rear structure of a PERC battery, and aims to solve the problems that the preparation process of the rear structure of the PERC battery in the prior art is complex and the implementation cost is high.
The invention is realized in such a way, and provides a preparation process of a PERC battery back structure, which comprises the following steps:
placing the pretreated silicon wafer into deposition equipment;
introducing aluminum source gas and oxygen source gas, and depositing on the back of the silicon wafer to form an aluminum oxide layer;
introducing silicon source gas, oxygen source gas and boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer;
introducing silicon source gas and nitrogen source gas to form a silicon nitride layer on the boron-containing silicon oxide layer;
performing laser grooving on the back of the silicon wafer, and diffusing the boron-containing silicon oxide layer at the laser grooving position on the back of the silicon wafer to form a p + doped region;
and screen-printing a back electrode which is contacted with the p + doped region at the laser grooving position on the back of the silicon wafer.
Preferably, the pretreatment of the silicon wafer sequentially comprises texturing, diffusion, etching and thermal oxidation.
Preferably, in the step of introducing an aluminum source gas and an oxygen source gas to deposit and form an aluminum oxide layer on the back surface of the silicon wafer, the aluminum source gas is trimethyl aluminum or aluminum chloride, and the oxygen source gas is nitrous oxide or ozone.
Preferably, the step of introducing an aluminum source gas and an oxygen source gas and depositing on the back of the silicon wafer to form an aluminum oxide layer specifically comprises:
introducing trimethyl aluminum and nitrous oxide, wherein the deposition time is 90-100s, and the temperature is 350-490 ℃.
Preferably, in the step of introducing a silicon source gas, an oxygen source gas and a boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer, the silicon source gas is any one of silane, silicon tetrachloride or dichlorosilane, the oxygen source gas is nitrous oxide or ozone, and the boron source gas is diborane or butylborane.
Preferably, the step of introducing a silicon source gas, an oxygen source gas and a boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer specifically includes;
introducing silane, diborane and laughing gas at 380-480 ℃, wherein the silane flow rate is 800-10000 sccm, the diborane flow rate is 80-100sccm, and the laughing gas flow rate is 8000-10000 sccm.
Preferably, in the step of introducing a silicon source gas and a nitrogen source gas to form a silicon nitride layer on the boron-containing silicon oxide layer, the silicon source gas is any one of silane, silicon tetrachloride or dichlorosilane, and the nitrogen source gas is ammonia gas or nitrogen dichloride.
Preferably, the silicon nitride layer comprises a first silicon nitride layer, a second silicon nitride layer and a third silicon nitride layer which are deposited in sequence; the step of introducing a silicon source gas and a nitrogen source gas to form a silicon nitride layer on the boron-containing silicon oxide layer specifically comprises:
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 6300-6500sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 240-260 s;
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 11000-12000sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 295-315 s;
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 12000-13000sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 180-200 s.
Preferably, the wavelength of the laser is 300-600 nm.
Preferably, the step of introducing an aluminum source gas and an oxygen source gas to deposit and form an aluminum oxide layer on the back surface of the silicon wafer, and the step of introducing a silicon source gas, an oxygen source gas and a boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer further include:
and introducing silane and laughing gas in sequence to blow the back of the silicon wafer.
The invention also provides a PERC battery back structure which is prepared by the preparation process of the PERC battery back structure.
The invention also provides a PERC battery, which comprises a silicon wafer, wherein the back surface of the silicon wafer is provided with the PERC battery back surface structure.
According to the preparation process of the PERC cell back structure, silicon source gas, oxygen source gas and boron source gas are introduced to form a boron-containing silicon oxide layer on an aluminum oxide layer, and then laser energy in the back laser grooving process is ingeniously utilized to diffuse a part of boron elements in the boron-containing silicon oxide layer into a silicon wafer to form a p + doped region, so that a high-low junction structure is formed, the back surface passivation effect is further enhanced, and the conversion efficiency of a cell is improved; the p + doped region is prepared without adding any process step, only the boron source gas is introduced in the traditional silicon oxide layer preparation step, and the p + doped region is prepared without printing boron source slurry at the back laser grooving position, so that the back structure preparation process of the PERC cell is greatly simplified, the back structure preparation process of the PERC cell is simple, and the preparation process is low in implementation cost.
Drawings
Fig. 1 is a schematic diagram illustrating a partial structure of a PERC battery according to an embodiment of the present invention;
fig. 2 is a flowchart of a process for manufacturing a backside structure of a PERC cell according to a second embodiment of the present invention;
fig. 3 is a flowchart of a process for manufacturing a backside structure of a PERC cell according to a third embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
According to the preparation process of the PERC cell back structure provided by the embodiment of the invention, the boron-containing silicon oxide layer is formed on the aluminum oxide layer by introducing the silicon source gas, the oxygen source gas and the boron source gas, and then laser energy in the back laser grooving process is ingeniously utilized to diffuse a part of boron elements in the boron-containing silicon oxide layer into the silicon wafer to form a p + doped region, so that a high-low junction structure is formed, the back surface passivation effect is further enhanced, and the conversion efficiency of the cell is improved; the p + doped region is prepared without any process step, only the boron source gas is added in the traditional silicon oxide layer preparation step, and the p + doped region is prepared without printing boron source slurry at the back laser grooving position, so that the preparation process of the back structure of the PERC cell is greatly simplified, the preparation process of the back structure of the PERC cell is simple, and the preparation process is low in implementation cost.
Example one
Referring to fig. 1, a PERC cell according to an embodiment of the present invention includes a silicon wafer 1, a backside structure of the PERC cell is disposed on a backside of the silicon wafer, the backside structure of the PERC cell includes an aluminum oxide layer 2, a boron-containing silicon oxide layer 3, a silicon nitride layer 4, and a backside electrode 5, which are sequentially disposed from top to bottom on the silicon wafer 1, a p + doped region 6 is disposed on a backside of the silicon wafer 1 and corresponds to the backside electrode 5, and the backside electrode 5 passes through the silicon nitride layer 4, the boron-containing silicon oxide layer 3, the aluminum oxide layer 2, and contacts the p + doped region 6. Wherein, the silicon chip 1 is a P-type silicon chip. By forming the p + doped region 6 on the back surface of the silicon wafer 1, the passivation effect of the back surface of the battery is further enhanced and the conversion efficiency of the battery is improved, similar to the high-low junction structure of the front surface of the battery.
In this embodiment, the silicon nitride layer 4 includes a first silicon nitride layer 41, a second silicon nitride layer 42 and a third silicon nitride layer 43, so as to further enhance the protection effect of the back surface of the battery.
Example two
Referring to fig. 2, a process for manufacturing a backside structure of a PERC cell according to an embodiment of the present invention is used to manufacture the backside structure of the PERC cell according to the first embodiment, and includes the following steps:
step S10, placing the pretreated silicon wafer 1 into deposition equipment;
in the embodiment of the invention, the pretreatment of the silicon wafer 1 sequentially comprises texturing, diffusion, etching and thermal oxidation. Specifically, the front surface of the silicon wafer 1 is textured to prepare a textured structure. Forming a PN junction by diffusing the silicon wafer 1; etching the edge of the silicon wafer 1 by using hydrofluoric acid mixed solution, removing junction areas on the edge and the back and a PSG layer on the surface, carrying out acid cleaning on the silicon wafer 1 by using acid solution to remove phosphorosilicate glass on the front side of the silicon wafer 1, and then carrying out thermal oxidation on the front side of the silicon wafer 1 to form a silicon oxide film. In addition, the pretreatment process of the silicon wafer 1 can be flexibly adjusted according to the front structure of the battery.
In the embodiment of the invention, the silicon wafer 1 is a P-type silicon wafer 1.
In the embodiment of the present invention, the deposition apparatus is specifically PECVD or ALD, that is, an aluminum oxide layer 2, a boron-containing silicon oxide layer 3, and a silicon nitride layer 4 may be sequentially prepared on the back surface of a silicon wafer 1 by using a PECVD method or an ALD method.
Step S20, introducing aluminum source gas and oxygen source gas, and depositing on the back of the silicon wafer 1 to form an aluminum oxide layer 2;
as an embodiment of the present invention, the aluminum source gas is Trimethylaluminum (TMA) or aluminum chloride, and the oxygen source gas is dinitrogen monoxide or ozone.
As a preferred embodiment of the present invention, step S2 specifically includes:
introducing trimethylaluminum and nitrous oxide, wherein the deposition time is 90-100s, the temperature is 350-.
Step S30, introducing silicon source gas, oxygen source gas and boron source gas to form a boron-containing silicon oxide layer 3 on the aluminum oxide layer 2;
in this step, only the boron source gas is introduced in the back silicon oxide layer preparation step in the conventional PERC cell preparation process to prepare the boron-containing silicon oxide layer 3 containing boron element, so that the energy of the laser grooving is subsequently utilized to promote part of the boron element in the boron-containing silicon oxide layer 3 to diffuse to the silicon wafer 1 to form the p + doped region 6.
As an embodiment of the present invention, the silicon source gas is any one of silane, silicon tetrachloride, or dichlorosilane, the oxygen source gas is nitrous oxide or ozone, and the boron source gas is diborane or butylborane.
As a preferred embodiment of the present invention, step S3 specifically includes:
introducing silane, diborane and laughing gas at 380-480 ℃, wherein the silane flow rate is 800-10000 sccm, the diborane flow rate is 80-100sccm, and the laughing gas flow rate is 8000-10000 sccm.
Step S40, introducing a silicon source gas and a nitrogen source gas to form a silicon nitride layer 4 on the boron-containing silicon oxide layer 3;
in an embodiment of the present invention, the silicon source gas is any one of silane, silicon tetrachloride, and dichlorosilane, and the nitrogen source gas is ammonia gas or nitrogen dichloride.
As a preferred embodiment of the present invention, the silicon nitride layer 4 includes a first silicon nitride layer 41, a second silicon nitride layer 42, and a third silicon nitride layer 43 deposited in this order; step S4 specifically includes:
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 6300-6500sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 240-260s, so as to deposit the first silicon nitride layer 41;
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 11000-12000sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 295-315s, so as to deposit the second silicon nitride layer 42;
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 12000-13000sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 180-200s, so as to deposit the third silicon nitride layer 43.
Step S50, performing laser grooving on the back of the silicon wafer 1, and diffusing the boron-containing silicon oxide layer 3 at the laser grooving position on the back of the silicon wafer 1 to form a p + doped region 6;
in the embodiment of the invention, the silicon nitride layer 4, the boron-containing silicon oxide layer 3 and the aluminum oxide layer 2 on the back surface of the silicon wafer 1 are selectively etched by laser to expose the back surface of the silicon wafer 1 to form a laser groove, and in the process, the energy of the laser is utilized to promote part of boron elements in the boron-containing silicon oxide layer 3 to diffuse to the silicon wafer 1 to form the p + doped region 6. The laser energy of the back laser grooving of the traditional PERC cell preparation process is ingeniously utilized, a part of boron elements of the boron-containing silicon oxide layer 3 are diffused into the silicon wafer 1 to form the p + doped region 6, the p + doped region 6 is prepared without adding any process step, only boron source gas is needed to be introduced in the back silicon oxide layer preparation step in the traditional PERC cell preparation process, the preparation process of the back structure of the PERC cell is very simple, and the preparation process is low in implementation cost.
As an embodiment of the invention, the wavelength of the laser is 300-600nm, which ensures that the laser has enough energy to promote the boron element of the boron-containing silicon oxide layer 3 to diffuse into the silicon wafer 1 to form the p + doped region 6.
In step S60, a back electrode 5 in contact with the p + doped region 6 is screen printed at the laser grooving position on the back side of the silicon wafer 1.
In the step, according to the design of a screen printing plate graph, printing aluminum paste and silver paste at the laser grooving position on the back surface of the silicon chip 1 by adopting screen printing, simultaneously printing the silver paste on the front surface of the silicon chip 1, forming a back electrode 5 which forms ohmic contact with the p + doping area 6 on the back surface of the silicon chip 1 after high-temperature sintering, forming a front electrode on the front surface of the silicon chip 1, and manufacturing to obtain the PERC cell.
According to the preparation process of the PERC cell back structure, silicon source gas, oxygen source gas and boron source gas are introduced to deposit the boron-containing silicon oxide layer, laser energy in the back laser grooving process is utilized ingeniously, part of boron elements in the boron-containing silicon oxide layer 3 are diffused into the silicon wafer 1 to form the p + doped region 6, a high-low junction structure is formed, the back surface passivation effect is further enhanced, and the conversion efficiency of the cell is improved; the p + doped region 6 is prepared without adding any process step, only the boron source gas is introduced in the traditional silicon oxide layer preparation step, and the p + doped region 6 is prepared without printing boron source slurry at the back laser grooving position, so that the back structure preparation process of the PERC cell is greatly simplified, the back structure preparation process of the PERC cell is simple, and the preparation process is low in implementation cost.
EXAMPLE III
Referring to fig. 3, in the second embodiment, the method further includes, between the step S20 and the step S30:
and step S25, sequentially introducing silane and laughing gas to purge the back of the silicon wafer 1.
In the embodiment, in the process of respectively introducing silane and laughing gas to purge the back of the silicon wafer 1, the aluminum source gas remaining in the step S10 can be fully evacuated by silane, so that the compactness of the boron-containing silicon oxide layer 3 is improved; meanwhile, the laughing gas can be ionized by utilizing the radio frequency discharge of the deposition equipment to obtain O 2- Providing O-rich deposition of boron-containing silicon oxide layer 3 2- The surface dangling bonds on the back surface of the silicon wafer 1 are passivated, so that the passivation effect on the back surface of the battery is further improved.
As a preferred embodiment of the invention, the time for respectively purging the back surface of the silicon wafer 1 by using silane and laughing gas is 330-400s, so that the good compactness of the boron-containing silicon oxide layer 3 is ensured, and the good passivation effect of the back surface of the cell is ensured.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. A preparation process of a rear structure of a PERC battery is characterized by comprising the following steps:
placing the pretreated silicon wafer into deposition equipment;
introducing aluminum source gas and oxygen source gas, and depositing on the back of the silicon wafer to form an aluminum oxide layer;
introducing silicon source gas, oxygen source gas and boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer;
introducing silicon source gas and nitrogen source gas to form a silicon nitride layer on the boron-containing silicon oxide layer;
performing laser grooving on the back of the silicon wafer, and diffusing the boron-containing silicon oxide layer at the laser grooving position on the back of the silicon wafer to form a p + doped region;
and screen-printing a back electrode which is contacted with the p + doped region at the laser grooving position on the back of the silicon wafer.
2. The process of claim 1, wherein the pre-treatment of the silicon wafer comprises texturing, diffusion, etching and thermal oxidation sequentially.
3. The process of claim 1, wherein during the step of introducing an aluminum source gas and an oxygen source gas to deposit an aluminum oxide layer on the back surface of the silicon wafer, the aluminum source gas is trimethylaluminum or aluminum chloride, and the oxygen source gas is nitrous oxide or ozone.
4. The process of claim 1, wherein the step of introducing an aluminum source gas and an oxygen source gas to deposit an aluminum oxide layer on the back of the silicon wafer comprises:
introducing trimethylaluminum and nitrous oxide, wherein the deposition time is 90-100s, and the temperature is 350-490 ℃.
5. The process of claim 1, wherein in the step of introducing a silicon source gas, an oxygen source gas and a boron source gas to form a boron-containing silicon oxide layer on the aluminum oxide layer, the silicon source gas is any one of silane, silicon tetrachloride or dichlorosilane, the oxygen source gas is nitrous oxide or ozone, and the boron source gas is diborane or butylborane.
6. The process of claim 1, wherein said introducing a silicon source gas, an oxygen source gas, and a boron source gas to form a boron-containing silicon oxide layer on said aluminum oxide layer comprises;
introducing silane, diborane and laughing gas at 380-480 ℃, wherein the silane flow rate is 800-10000 sccm, the diborane flow rate is 80-100sccm, and the laughing gas flow rate is 8000-10000 sccm.
7. The process of claim 1, wherein in the step of introducing a silicon source gas and a nitrogen source gas to form a silicon nitride layer on the boron-containing silicon oxide layer, the silicon source gas is any one of silane, silicon tetrachloride or dichlorosilane, and the nitrogen source gas is ammonia gas or nitrogen dichloride.
8. The process of claim 1, wherein the silicon nitride layer comprises a first silicon nitride layer, a second silicon nitride layer and a third silicon nitride layer deposited sequentially; the step of introducing a silicon source gas and a nitrogen source gas to form a silicon nitride layer on the boron-containing silicon oxide layer specifically comprises:
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 6300-6500sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 240-260 s;
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 11000-12000sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 295-315 s;
introducing silane and ammonia gas, wherein the flow rate of the silane is 1900-2000sccm, the flow rate of the ammonia gas is 12000-13000sccm, the duty ratio is 5/80, the temperature is 380-480 ℃, and the deposition time is 180-200 s.
9. The process of claim 1, wherein the laser has a wavelength of 300-600 nm.
10. The process of claim 1, wherein the step of introducing the aluminum source gas and the oxygen source gas to deposit the aluminum oxide layer on the back surface of the silicon wafer and the step of introducing the silicon source gas, the oxygen source gas and the boron source gas to form the boron-containing silicon oxide layer on the aluminum oxide layer further comprise:
and introducing silane and laughing gas in sequence to blow the back of the silicon wafer.
11. A PERC cell back structure, produced by the process of making a PERC cell back structure according to any of claims 1-10.
12. A PERC cell comprising a silicon wafer having a backside provided with the PERC cell backside structure of claim 11.
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| CN117476817A (en) * | 2023-12-28 | 2024-01-30 | 无锡松煜科技有限公司 | Preparation method of laminated passivation structure with low electron-hole recombination rate |
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