CN108054221A - The back side grid line structure of two-sided PERC batteries, two-sided PERC batteries and preparation method thereof - Google Patents
The back side grid line structure of two-sided PERC batteries, two-sided PERC batteries and preparation method thereof Download PDFInfo
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- CN108054221A CN108054221A CN201711362873.7A CN201711362873A CN108054221A CN 108054221 A CN108054221 A CN 108054221A CN 201711362873 A CN201711362873 A CN 201711362873A CN 108054221 A CN108054221 A CN 108054221A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 89
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 89
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 89
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229940037003 alum Drugs 0.000 claims abstract description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 57
- 239000010703 silicon Substances 0.000 claims abstract description 57
- 239000004411 aluminium Substances 0.000 claims abstract description 44
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 44
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 44
- 230000005611 electricity Effects 0.000 claims abstract description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000013461 design Methods 0.000 abstract description 9
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000010248 power generation Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of back side grid line structures of two-sided PERC batteries, two-sided PERC batteries and preparation method thereof, the back side grid line structure includes several alum gate lines and several back electrode main grids, alum gate line and back electrode main grid vertical connection, the lower section of alum gate line are equipped with several sections of spaced laser rays；Alum gate line is alternately formed by connecting by several sections wide alum gate line and several sections narrow alum gate line, the quantity of wide alum gate line is identical with the quantity of laser rays, wide alum gate line is used to cover the local Ohmic contact of laser rays realization aluminium and silicon and exports the electronics inside silicon chip, and narrow alum gate line is used to collect electronics derived from inside silicon chip and is transferred to back electrode main grid.The back side grid line structure of the present invention has the advantages that simple in structure, design cost is low etc..Battery comprising the back side grid line structure has many advantages, such as that back side electricity conversion is high, output power is high, angularity is small, hidden risk of splitting is small, its preparation method have it is simple, at low cost, be applicable to scale of mass production.
Description
Technical field
The invention belongs to area of solar cell, are related to a kind of back side grid line structure, the two-sided PERC of two-sided PERC batteries
Battery and preparation method thereof.
Background technology
Conventional fossil fuel is increasingly depleted, and the sight of people is had been concentrated on solar energy.Solar energy is as one
The inexhaustible energy form of kind, just gradually enters among our daily life.At present, silicon solar cell is
Battery with the most use in the market, efficient generating efficiency, ripe production technology make the online of photovoltaic par become a reality.So
And with the development of technology, PERC batteries (passivated emitter and rear cell), i.e. the passivation emitter back side
Contact solar cell has received widespread attention.Aluminium paste is printed on silicon chip by existing single side PERC batteries by printing
The entire back side, aluminium layer are entirely covered on laser incising corrosion line, and local alusil alloy layer is formed in laser incising corrosion line region, and are not being had
The place for having laser incising corrosion line is simply simply covered on passivation film, since full Al-BSF is light tight, is so resulted in whole
A back side cannot receive illumination and realize back side power generation, so only absorption luminous energy in front realizes single side power generation.And two-sided PERC electricity
Pond is exactly the Al-BSF structure for changing the back side on the basis of existing routine PERC batteries, and original full Al-BSF structure is made into
Alum gate cable architecture makes the place that aluminium paste is not covered with that can also receive illumination and realizes back side power generation, increases the power generation of single battery piece
Amount.Two-sided PERC cell backsides make alum gate line be completely covered in backside laser etched line by precision printing, so as to fulfill aluminium
It starches the electronics for generating inside battery in regional area and silicon formation Ohmic contact to export, collects electronics eventually by alum gate line
It to backplate, generates electricity so as to fulfill the back side, while can also improve positive open-circuit voltage Uoc and short circuit current flow Isc, further
Improve the generated energy of monolithic battery piece.
Two-sided PERC battery structures are gradually acceptable to the market and promote and come as a kind of more popular battery structure.
At present, the design of two-sided PERC backside structures is concentrated mainly in the structure design of back of the body silver electrode and alum gate line is with carrying on the back silver electricity
In the type of attachment of pole, and the optimization design on alum gate cable architecture in two-sided PERC backside structures is almost without referring to.It is existing
It is typically to be designed using the strip of whole alum gate line even thickness in the back aluminium grid line structure of two-sided PERC batteries, but by
Can be that solid line can also be phantom line segments in laser incising corrosion line, the strip design of this whole alum gate line even thickness is difficult real
The balance between lower shielded area is now precisely covered, so the back side transfer efficiency for inevitably resulting in two-sided PERC batteries is inclined
It is low.Such as, the width of alum gate line is too wide, although can guarantee that alum gate line can cover laser incising corrosion line, wide aluminium well
Grid line cause the back side be blocked area and passivation film region that the back side is destroyed becomes larger, be unfavorable for absorbing more illumination,
So as to reduce the back side photoelectric conversion efficiency of two-sided PERC batteries；And the width of alum gate line is too narrow, then it is difficult to ensure that alum gate line energy
Laser-induced thermal etching line is covered all, cannot then form local Al-BSF well and local contact is caused to be deteriorated, electric conductivity drop
Low, this can equally reduce the back side electricity conversion of two-sided PERC batteries.At the same time, as back side efficiency is wanted in market
It asks higher and higher, will certainly reduce the width of alum gate line, and alum gate line is other implementation above in the micron-scale to the covering of laser rays
Precise alignment, so for the etching precision of laser, the printing precision of printing machine platform, the deflection of Al-BSF halftone and aluminium used
The quality of slurry made higher requirement.In addition, whole alum gate line is designed using the strip of even thickness, aluminium paste can be increased
Dosage increases manufacturing cost, while the angularity that can also increase two-sided PERC batteries improves hidden in cell piece manufacturing process split
Risk.
The content of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, provide a kind of simple in structure, design cost
The back side grid line structure of low two-sided PERC batteries, additionally provide a kind of two-sided PERC batteries comprising the back side grid line structure and
Its preparation method.
In order to solve the above technical problems, the present invention uses following technical scheme：
A kind of back side grid line structure of two-sided PERC batteries, including several alum gate lines and several back electrode main grids, institute
Alum gate line and back electrode main grid vertical connection are stated, the lower section of the alum gate line is equipped with several sections of spaced laser rays；It is described
Alum gate line is alternately formed by connecting by several sections wide alum gate line and several sections narrow alum gate line, the quantity and laser rays of the width alum gate line
Quantity it is identical, the width alum gate line, which is used to covering laser rays, to be realized the local Ohmic contact of aluminium and silicon and exports inside silicon chip
Electronics, the narrow alum gate line are used to collect electronics derived from inside silicon chip and are transferred to back electrode main grid.
The back side grid line structure of above-mentioned two-sided PERC batteries, further improved, the laser rays passes through to two-sided
PERC cell backsides carry out lbg and are prepared, and the die sinking rate of the two-sided PERC cell backsides lbg is 0.1%
~10%；The spacing of the laser rays is 0.01mm~50mm.
The back side grid line structure of above-mentioned two-sided PERC batteries, further improved, the two-sided PERC cell backsides swash
The die sinking rate of light fluting is 0.1%~5%；The spacing of the laser rays is 0.01mm~2mm.
The back side grid line structure of above-mentioned two-sided PERC batteries, further improved, the width of the wide alum gate line is 20 μ
M~800 μm.
The back side grid line structure of above-mentioned two-sided PERC batteries, further improved, the width ＜ 800 of the narrow alum gate line
μm。
The back side grid line structure of above-mentioned two-sided PERC batteries, it is further improved, it is mutually parallel between the alum gate line；
The spacing of the alum gate line is 0.01mm~50mm.
The back side grid line structure of above-mentioned two-sided PERC batteries, it is further improved, the end face of the width alum gate line with it is narrow
The end face fitting of alum gate line；The binding face is plane or curved surface.
The back side grid line structure of above-mentioned two-sided PERC batteries, it is further improved, between the back electrode main grid mutually
It is parallel；Spacing≤100mm of the back electrode main grid；The width of the back electrode main grid is 0.5mm~5mm；The back electrode
Main grid includes aluminium main grid, covered with the equal silver wire section of several sections of spacing distances on the aluminium main grid；The aluminium main grid and silver
The width of the overlapping region of line segment junction is 0.01mm~6mm；The quantity of the silver wire section is 1 section~20 sections；The silver wire
Length≤50mm of section.
The inventive concept total as one, the present invention also provides a kind of two-sided PERC batteries, including above-mentioned back side grid
Cable architecture.
The inventive concept total as one, the present invention also provides a kind of preparation method of above-mentioned two-sided PERC batteries,
Comprise the following steps：Cleaning and texturing, diffusion, secondary cleaning are carried out to silicon chip；Silicon chip back side aluminum oxide layer/silicon nitride layer；
Front side of silicon wafer deposited silicon nitride antireflection layer；Silicon chip back side lbg；Silk-screen printing prepares back side grid line structure and front grid
Cable architecture；Sintering.
Compared with prior art, the advantage of the invention is that：
1st, a kind of back side grid line structure of two-sided PERC batteries is provided in the present invention, laser rays in the back side grid line structure
Using actual situation line segment pattern, i.e., slot out according to actual demand below alum gate line position several sections of spaced laser
Straight line pattern (a whole laser rays is etched below alum gate line position) in line rather than use traditional design, from
And when avoiding laser rays using straight line pattern, caused cell piece is hidden splits increased risk.On this basis, the present invention is gone back
Design is optimized to the alum gate line for being used to cover laser rays, is covered in laser rays position using wide alum gate line,
It can not only realize the local Ohmic contact of aluminium and silicon and export the electronics inside silicon chip, while alum gate line and laser can also be reduced
The difficulty of line exactitude position, and covered in the band of position existing for no laser rays using narrow alum gate line, to meet silicon chip
Internal electron collects and is transferred on back electrode main grid, without considering its exactitude position with cell backside, reduces system
Standby difficulty.At the same time, alum gate line can also be reduced using the structure type of narrow alum gate line to block back side light area, make electricity
Pond back side bigger region receives illumination and generates more light induced electrons, so as to improve back side electricity conversion.It is in addition, of the invention
The alum gate line formed is alternately connected using by several sections wide alum gate line and several sections narrow alum gate line, the use of aluminium paste can be reduced
Amount, has saved cost, and the dosage by reducing aluminium paste can also reduce angularity of the cell piece in sintering process, so as to reduce
The hidden ratio split, makes the quality of cell piece be significantly improved during establishment of component.The back side of the two-sided PERC batteries of the present invention
Grid line structure has the advantages that simple in structure, design cost is low etc., can ensure the alum gate line shielded area feelings lower to back surface
Excellent Ohmic contact is realized under condition, improves the back side photoelectric conversion efficiency of two-sided PERC batteries, while aluminium can be further reduced
The dosage of slurry and reduce cell piece warpage reduce it is hidden split risk, reduce manufacture cost, promote battery quality.
2nd, the present invention also provides a kind of two-sided PERC batteries, which employs above-mentioned back side grid line knot
Structure has many advantages, such as that back side electricity conversion is high, output power is high, angularity is small, hidden to split risk small.
3rd, the present invention also provides a kind of preparation method of two-sided PERC batteries, have preparation process it is simple, it is at low cost, can
The advantages that suitable for scale of mass production, thus obtained two-sided PERC batteries have back side electricity conversion height, output power
It is high, angularity is small, hidden splits the advantages that risk is small.
Description of the drawings
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, clear, complete description is carried out to the technical solution in the embodiment of the present invention.
Fig. 1 is the schematic diagram of the back side grid line structure of the two-sided PERC batteries of the present invention.
Fig. 2 is the partial structural diagram of the back side grid line structure alum gate line of two-sided PERC batteries in the embodiment of the present invention 1.
Fig. 3 is that the partial structurtes of the back side grid line structure back electrode main grid of two-sided PERC batteries in the embodiment of the present invention 1 are shown
It is intended to.
Fig. 4 is the partial structural diagram of the back side grid line structure alum gate line of two-sided PERC batteries in the embodiment of the present invention 2.
Fig. 5 is the partial structural diagram of the back side grid line structure of two-sided PERC batteries in comparative example.
Marginal data：
1st, alum gate line；11st, wide alum gate line；12nd, narrow alum gate line；2nd, back electrode main grid；21st, aluminium main grid；22nd, silver wire section；3、
Laser rays.
Specific embodiment
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described, but not therefore and
It limits the scope of the invention.
Embodiment 1
A kind of two-sided PERC cell backsides grid line structure, as depicted in figs. 1 and 2, including several alum gate lines 1 and several
Back electrode main grid 2, alum gate line 1 and 2 vertical connection of back electrode main grid, the lower section of alum gate line 1 are equipped with several sections and spaced swash
Light 3, alum gate line 1 are alternately formed by connecting by several sections wide alum gate line 11 and several sections narrow alum gate line 12, the number of wide alum gate line 11
Amount is identical with the quantity of laser rays 3, and wide alum gate line 11 is used to cover the local Ohmic contact of the realization aluminium of laser rays 3 and silicon and export
Electronics inside silicon chip, narrow alum gate line 12 are used to collect electronics derived from inside silicon chip and are transferred to back electrode main grid 2.
In the present embodiment, laser rays 3 is prepared by carrying out lbg to two-sided PERC cell backsides, wherein, it is double
The die sinking rate that face PERC cell backside laser opens film is 3.5%, and the spacing of laser rays 3 is 0.8mm.In the present embodiment, in laser
Slotting position is 3 position of laser rays, laser rays 3 is completely covered using wide alum gate line 11, and does not carry out lbg
Position covered by the narrow alum gate line 12 being connected with wide alum gate line 11, thus wide alum gate line 11 and narrow alum gate line 12 alternately connection and
Into alum gate line 1 can not only ensure that aluminium and silicon form good Ohmic contact, moreover it is possible to reduce alum gate line to back side light area
Block, promote the back side photoelectric conversion efficiency of two-sided PERC batteries to greatest extent.
In the present embodiment, the width of wide alum gate line 11 is more than the width of narrow alum gate line 12, wherein the width of wide alum gate line 11
For 300 μm, length is 700 μm；The width of narrow alum gate line 12 is 50 μm, and length is 300 μm.
In the present embodiment, several sections wide alum gate line 11 and several sections narrow alum gate line 12 are alternately connected until electricity in alum gate line 1
It is mutually parallel between pond piece edge, wherein alum gate line 1, spacing is 0.8mm (in order to ensure that alum gate line 1 is corresponded with laser rays 3
The effectively covering laser rays 3 of alum gate line 1 is realized in covering, thus the spacing of alum gate line 1 and the spacing of laser rays 3 are identical)；Aluminium
The range areas size that grid line 1 is distributed in two-sided PERC rear surface of solar cell is 154.75cm × 154.75cm.
In the present embodiment, the end face of wide alum gate line 11 is bonded with the end face of narrow alum gate line 12, and binding face is plane.
In the present embodiment, as shown in figures 1 and 3, it is mutually parallel between back electrode main grid 2, is evenly distributed in two-sided PERC
The back side of battery, the wherein spacing of back electrode main grid 2 are 31.2mm, width 1.6mm.Back electrode main grid 2 includes aluminium main grid
21, covered with the equal silver wire section 22 of several sections of spacing distances, wherein aluminium main grid 21 and 22 junction of silver wire section on aluminium main grid 21
Overlapping region width for 0.2mm, the quantity of silver wire section 22 is 6 sections, and the length of silver wire section is 13.26mm, between silver wire section
Away from for 10mm.
A kind of two-sided PERC batteries, including back side grid line structure, back side silicon nitride, the back of the body in the embodiments of the present invention
Face pellumina, P-type silicon, N-type emitter, front side silicon nitride film and positive galactic pole, wherein back side grid line structure, back side silicon nitride silicon
Film, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and positive galactic pole stack gradually connection from bottom to up；The back side
In grid line structure, back electrode main grid 2 is arranged on back side silicon nitride (at this time the back side of two-sided PERC batteries upward), laser rays
3 are prepared by carrying out lbg to back side silicon nitride and backside oxide aluminium film, and alum gate line 1 is by covering laser rays 3
It is connected with P-type silicon.
The preparation method of two-sided PERC batteries, comprises the following steps in a kind of embodiments of the present invention：Silicon chip is carried out
Cleaning and texturing, diffusion, secondary cleaning；Silicon chip back side aluminum oxide layer/silicon nitride layer；Front side of silicon wafer deposited silicon nitride antireflective
Layer；Silicon chip back side lbg；Silk-screen printing prepares back side grid line structure and front gate line structure；Sintering.The preparation of the present invention
In method, specifically：Silicon chip is subjected to prerinse, goes damaging layer and process for etching, in the two-sided preparation inverted pyramid suede of silicon chip
Face structure increases silicon chip surface and the multiple reflections of light is absorbed；The silicon chip for making suede structure is subjected to phosphorus diffusion at high temperature,
Prepare PN junction；Silicon chip after diffusion is subjected to secondary cleaning, equipment is chain equipment, diffusion matte upward, etching liquid HF
And HNO3Aqueous solution, removal phosphorosilicate glass and the back of the body are tied；Silicon chip back side after secondary cleaning is subjected to aluminium oxide/nitride deposition,
Front prepares anti-reflection silicon nitride layer then in laser equipment, to the back side by PECVD (plasma reinforced chemical vapour deposition)
Overlayer passivation film carries out lbg；Backgate cable architecture and front gate line structure are prepared by silk-screen printing；Finally through oversintering
Two-sided PERC batteries are prepared.
Embodiment 2
A kind of two-sided PERC cell backsides grid line structure, as shown in Figure 1 and Figure 4, including several alum gate lines 1 and several
Back electrode main grid 2, alum gate line 1 and 2 vertical connection of back electrode main grid, the lower section of alum gate line 1 are equipped with several sections and spaced swash
Light 3；Alum gate line 1 is alternately formed by connecting by several sections wide alum gate line 11 and several sections narrow alum gate line 12, the number of wide alum gate line 11
Amount is identical with the quantity of laser rays 3；Wide alum gate line 11 is used to cover the local Ohmic contact of the realization aluminium of laser rays 3 and silicon and export
Electronics inside silicon chip, narrow alum gate line 12 are used to collect electronics derived from inside silicon chip and are transferred to back electrode main grid 2.
In the present embodiment, laser rays 3 is prepared by carrying out lbg to two-sided PERC cell backsides, wherein, it is double
The die sinking rate that face PERC cell backside laser opens film is 4.5%, and the spacing of laser rays 3 is 0.7mm.In the present embodiment, in laser
Slotting position is 3 position of laser rays, laser rays 3 is completely covered using wide alum gate line 11, and does not carry out lbg
Position covered by the narrow alum gate line 12 being connected with wide alum gate line 11, thus wide alum gate line 11 and narrow alum gate line 12 alternately connection and
Into alum gate line 1 can not only ensure that aluminium and silicon form good Ohmic contact, moreover it is possible to reduce alum gate line to back side light area
Block, promote the back side photoelectric conversion efficiency of two-sided PERC batteries to greatest extent.
In the present embodiment, the width of wide alum gate line 11 is more than the width of narrow alum gate line 12, wherein the width of wide alum gate line 11
For 200 μm, length is 800 μm；The width of narrow alum gate line 12 is 100 μm, and length is 200 μm.
In the present embodiment, several sections wide alum gate line 11 and several sections narrow alum gate line 12 are alternately connected until electricity in alum gate line 1
It is mutually parallel between pond piece edge, wherein alum gate line 1, spacing 0.7mm；Alum gate line 1 is distributed in two-sided PERC solar cells
The range areas size at the back side is 154.75cm × 154.75cm.
In the present embodiment, the end face of wide alum gate line 11 is bonded with the end face of narrow alum gate line 12, and binding face is curved surface.
It in the present embodiment, is mutually parallel between back electrode main grid 2, is evenly distributed in the back side of two-sided PERC batteries, wherein
The spacing of back electrode main grid 2 is 31.2mm, width 1.6mm.Back electrode main grid 2 includes aluminium main grid 21,21 overlying of aluminium main grid
It is stamped the equal silver wire section 22 of several sections of spacing distances, wherein aluminium main grid 21 and the width of the overlapping region of 22 junction of silver wire section
For 0.2mm, the quantity of silver wire section 22 is 6 sections, and the length of silver wire section is 13.26mm, and the spacing of silver wire section is 10mm.
A kind of two-sided PERC batteries, including the back side grid line structure in the embodiments of the present invention, while further include the back side
Silicon nitride film, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and positive galactic pole, wherein back side grid line structure,
Back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and positive galactic pole layer successively from bottom to up
Folded connection；In the grid line structure of the back side, back electrode main grid 2 is arranged on the (back side of two-sided PERC batteries at this time on back side silicon nitride
Upward), laser rays 3 is prepared by carrying out lbg to back side silicon nitride and backside oxide aluminium film, and alum gate line 1 passes through
Covering laser rays 3 is connected with P-type silicon.
The preparation method of two-sided PERC batteries, comprises the following steps in a kind of embodiments of the present invention：Silicon chip is carried out
Cleaning and texturing, diffusion, secondary cleaning；Silicon chip back side aluminum oxide layer/silicon nitride layer；Front side of silicon wafer deposited silicon nitride antireflective
Layer；Silicon chip back side lbg；Silk-screen printing prepares back side grid line structure and front gate line structure；Sintering.The preparation of the present invention
In method, specifically：Silicon chip is subjected to prerinse, goes damaging layer and process for etching, in the two-sided preparation inverted pyramid suede of silicon chip
Face structure increases silicon chip surface and the multiple reflections of light is absorbed；The silicon chip for making suede structure is subjected to phosphorus diffusion at high temperature,
Prepare PN junction；Silicon chip after diffusion is subjected to secondary cleaning, equipment is chain equipment, diffusion matte upward, etching liquid HF
And HNO3Aqueous solution, removal phosphorosilicate glass and the back of the body are tied；Silicon chip back side after secondary cleaning is subjected to aluminium oxide/nitride deposition,
Front prepares anti-reflection silicon nitride layer then in laser equipment, to the back side by PECVD (plasma reinforced chemical vapour deposition)
Overlayer passivation film carries out lbg；Backgate cable architecture and front gate line structure are prepared by silk-screen printing；Finally through oversintering
Two-sided PERC batteries are prepared.
Comparative example
A kind of back side grid line structure of two-sided PERC batteries, as shown in Figure 1 and Figure 5, with the back side grid line knot in embodiment 1
Structure is compared, and the difference is that only：In back side grid line structure in comparative example, one is etched below 1 position of alum gate line
Whole laser rays 3, and laser rays 3 is covered using the alum gate line 1 of even thickness.Meanwhile it prepares with above-mentioned back side grid line structure
Two-sided PERC batteries.
Test the back side photoelectric conversion effect of the embodiment of the present invention 1, embodiment 2 and two-sided PERC batteries made from comparative example
What is generated during rate, cell output (Pmax), aluminium paste usage amount, angularity and establishment of component used in Al-BSF hidden splits ratio
Example, test result are as shown in table 1.
The correlation performance parameters of two-sided PERC batteries obtained by 1 embodiment of the present invention of table and comparative example
As shown in Table 1, compared to existing conventional back surface grid line structure, using the two-sided PERC electricity of back side grid line structure of the present invention
Back side electricity conversion, the cell output (Pmax) in pond are obviously improved, at the same aluminium paste usage amount, angularity and
Hidden ratio of splitting all substantially reduces, and wherein embodiment 1 is compared pair with the back side electricity conversion of two-sided PERC batteries in embodiment 2
Ratio has been respectively increased 0.35%, 0.22%, and 2.1W, 1.4W, aluminium paste usage amount has been respectively increased in cell output (Pmax)
Reduce 0.11g, 0.15g respectively, angularity reduces 0.2mm, 0.3mm respectively, it is hidden split ratio reduce 0.45% respectively,
0.42%.It can be seen that the back side grid line structure of the present invention, can not only realize the accurate covering to laser rays, ensure aluminium with
Silicon forms good Ohmic contact, and can reduce shielded area of the alum gate line to rear surface regions, improves two-sided PERC batteries
Back side photoelectric conversion efficiency, while the usage amount of aluminium paste can also be reduced, it is cost-effective, and the dosage by reducing aluminium paste also can
Angularity of the cell piece in sintering process is reduced, so as to reduce the hidden ratio split during establishment of component, makes the matter of cell piece
Amount is significantly improved.I.e. the two-sided PERC batteries with back side grid line structure of the present invention with back side electricity conversion it is high,
Output power is high, angularity is small, hidden splits the advantages that ratio is small.
Above example is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned reality
Apply example.All technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It is noted that it is led for this technology
For the those of ordinary skill in domain, improvements and modifications without departing from the principle of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of back side grid line structure of two-sided PERC batteries, including several alum gate lines (1) and several back electrode main grids
(2), the alum gate line (1) and back electrode main grid (2) vertical connection, which is characterized in that the alum gate line (1) if lower section be equipped with
The spaced laser rays (3) of dry section；The alum gate line (1) is by several sections wide alum gate line (11) and several sections narrow alum gate line (12)
Alternating is formed by connecting, and the quantity of the width alum gate line (11) is identical with the quantity of laser rays (3), and the width alum gate line (11) is used for
Covering laser rays (3) realizes the local Ohmic contact of aluminium and silicon and exports the electronics inside silicon chip, and the narrow alum gate line (12) is used
In electronics derived from collection silicon chip inside and it is transferred on back electrode main grid (2).
2. the back side grid line structure of two-sided PERC batteries according to claim 1, which is characterized in that the laser rays (3)
It is prepared by carrying out lbg to two-sided PERC cell backsides, the die sinking of the two-sided PERC cell backsides lbg
Rate is 0.1%~10%；The spacing of the laser rays (3) is 0.01mm~50mm.
3. the back side grid line structure of two-sided PERC batteries according to claim 2, which is characterized in that the two-sided PERC electricity
The die sinking rate of pond backside laser fluting is 0.1%~5%；The spacing of the laser rays (3) is 0.01mm~2mm.
4. the back side grid line structure of two-sided PERC batteries described in any one of claim 1 to 3, which is characterized in that institute
The width for stating wide alum gate line (11) is 20 μm~800 μm.
5. the back side grid line structure of two-sided PERC batteries described in any one of claim 1 to 3, which is characterized in that institute
State 800 μm of the width ＜ of narrow alum gate line (12).
6. the back side grid line structure of two-sided PERC batteries described in any one of claim 1 to 3, which is characterized in that institute
It states and is mutually parallel between alum gate line (1)；The spacing of the alum gate line (1) is 0.01mm~50mm.
7. the back side grid line structure of two-sided PERC batteries described in any one of claim 1 to 3, which is characterized in that institute
The end face for stating wide alum gate line (11) is bonded with the end face of narrow alum gate line (12)；The binding face is plane or curved surface.
8. the back side grid line structure of two-sided PERC batteries described in any one of claim 1 to 3, which is characterized in that institute
It states and is mutually parallel between back electrode main grid (2)；Spacing≤100mm of the back electrode main grid (2)；The back electrode main grid (2)
Width be 0.5mm~5mm；The back electrode main grid (2) includes aluminium main grid (21), the aluminium main grid (21) if on covered with
The equal silver wire section (22) of dry section spacing distance；The aluminium main grid (21) and the width of the overlapping region of silver wire section (22) junction
For 0.01mm~6mm；The quantity of the silver wire section (22) is 1 section~20 sections；Length≤50mm of the silver wire section.
9. a kind of two-sided PERC batteries, which is characterized in that the two-sided PERC batteries include any one of claim 1~8 institute
The back side grid line structure stated.
10. a kind of preparation method of two-sided PERC batteries as claimed in claim 9, which is characterized in that comprise the following steps：It is right
Silicon chip carries out cleaning and texturing, diffusion, secondary cleaning；Silicon chip back side aluminum oxide layer/silicon nitride layer；Front side of silicon wafer cvd nitride
Silicon antireflection layer；Silicon chip back side lbg；Silk-screen printing prepares back side grid line structure and front gate line structure；Sintering.
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| CN108847426A (en) * | 2018-06-22 | 2018-11-20 | 通威太阳能（安徽）有限公司 | A kind of backside structure improving two-sided PERC cell backside efficiency |
| CN109300998A (en) * | 2018-09-29 | 2019-02-01 | 苏州腾晖光伏技术有限公司 | A kind of two-sided crystal silicon solar cell sheet |
| CN114093959A (en) * | 2021-11-23 | 2022-02-25 | 南京苏煜新能源科技有限公司 | Solar cell and photovoltaic module |
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