CN109300998A - A kind of two-sided crystal silicon solar cell sheet - Google Patents
A kind of two-sided crystal silicon solar cell sheet Download PDFInfo
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- CN109300998A CN109300998A CN201811145993.6A CN201811145993A CN109300998A CN 109300998 A CN109300998 A CN 109300998A CN 201811145993 A CN201811145993 A CN 201811145993A CN 109300998 A CN109300998 A CN 109300998A
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- main grid
- solar cell
- aluminium
- crystal silicon
- cell sheet
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 34
- 239000010703 silicon Substances 0.000 title claims abstract description 34
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 239000004411 aluminium Substances 0.000 claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 49
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000004332 silver Substances 0.000 claims abstract description 36
- 229910052709 silver Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000012546 transfer Methods 0.000 abstract description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 241001062009 Indigofera Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of two-sided crystal silicon solar cell sheets, including silicon substrate, back passivating film and rear electrode, the back passivation film is laminated on the back side of the silicon substrate, the back passivating film is blue film of the thickness between 60 ~ 90nm, the rear electrode includes the back silver electrode being in contact with the silicon substrate, is formed in the back aluminium main grid and multiple back aluminium pair grid carried on the back on passivating film, the back aluminium pair grid and back aluminium main grid intersection, the back silver electrode is nested in the back aluminium main grid, is able to ascend the short circuit current and transfer efficiency at the cell piece back side.
Description
Technical field
The invention belongs to area of solar cell, and in particular to a kind of two-sided crystal silicon solar cell sheet.
Background technique
P-type PERC double-side cell is closed extensively due to simple, low in cost, generating electricity on two sides the characteristic of its preparation process
Note.According to the ITRPV prediction of Semi publication in 2017, two-sided single crystal battery will increase year by year in the following photovoltaic market accounting share
Add, the market accounting to double-side cell in 2027 is up to 30% or so.Compared with conventional PERC technique, double-side cell only exists
Using the full Al-BSF structure of back up alum gate line substitution routine PERC battery on original Process ba- sis, PERC electricity is being kept
While the high conversion efficiency of pond front, the back side can also generate electricity.However the battery efficiency of current PERC battery is relatively low.
Summary of the invention
In view of the above technical problems, the present invention is intended to provide a kind of two-sided crystal silicon solar cell sheet, is able to ascend electricity
The short circuit current and transfer efficiency at the pond piece back side.
In order to achieve the above objectives, The technical solution adopted by the invention is as follows:
A kind of two-sided crystal silicon solar cell sheet, including silicon substrate, back passivating film and rear electrode, the back passivation film are folded
In the back side of the silicon substrate, the back passivating film is blue film of the thickness between 60 ~ 90nm, and the rear electrode includes and institute
State the back silver electrode that silicon substrate is in contact, the back aluminium main grid and multiple back aluminium pair grid that are formed on the back passivating film, the back
Aluminium pair grid and back aluminium main grid intersection, the back silver electrode are nested in the back aluminium main grid.
Further, the back aluminium main grid includes multiple first main grids portion and multiple second main grids portion, first main grid
Portion and second main grid portion are staggeredly set and successively along the length direction arrangement of the back aluminium main grid, first main grid portions
Width be greater than the width in second main grid portion, the back silver electrode is nested in first main grid portion.
Further, gap is formed between the back silver electrode and first main grid portion.
Further, the window for exposing the back silver electrode is offered in first main grid portion.
Further, the width of the window is less than the width of the back silver electrode.
Specifically, the width of the back silver electrode is 1.6 ~ 2.0mm, and the width of the window is 1.5 ~ 1.8mm.
Specifically, the width in second main grid portion is 0.1 ~ 1.5mm.
Further, the solar battery on piece offers laser positioning hole.
Further, multiple back aluminium main grids are set side by side, and are respectively at two of solar battery sheet edge
Carry on the back at the both ends of aluminium main grid has the laser positioning hole respectively.
Further, the back passivating film is aluminium oxide and silicon nitride film.
The present invention uses above scheme, has the advantages that compared with prior art
It is only the blue film of 60 ~ 90nm as back passivating film, the sunken light effect of increase, promotion cell backside conversion effect by using thickness
Rate has preferable appearance；Rear electrode figure reduces aluminium paste consumption and screening using back aluminium main grid and back aluminium pair grid design simultaneously
Light area, to promote the short circuit current of cell backside.
Detailed description of the invention
It, below will be to attached drawing needed in embodiment description in order to illustrate more clearly of technical solution of the present invention
It is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of schematic diagram of the rear electrode of solar battery sheet according to the present invention；
Fig. 2 is the partial enlarged view of Fig. 1；
Fig. 3 be Fig. 2 in along A-A to cross-sectional view.
Wherein, 1, rear electrode；11, aluminium main grid is carried on the back；111, the first main grid portion；1110, window；112, the second main grid portion；
113, laser positioning hole；12, aluminium pair grid are carried on the back；13, silver electrode is carried on the back；130, gap；2, passivating film is carried on the back；3, silicon substrate.
Specific embodiment
The preferred embodiments of the present invention will be described in detail with reference to the accompanying drawing, so that advantages and features of the invention energy
It is easier to be understood by the person skilled in the art.It should be noted that the explanation for these embodiments is used to help
Understand the present invention, but and does not constitute a limitation of the invention.In addition, involved in the various embodiments of the present invention described below
And to technical characteristic can be combined with each other as long as they do not conflict with each other.
Referring to Fig.1 shown in -3, two-sided crystal silicon solar cell sheet according to the present invention, including silicon substrate 3, back passivating film
2 and rear electrode 1, back passivating film 2 is laminated in the back side of silicon substrate 3, and rear electrode 1 is set on back passivating film 2.In addition, silicon
The front of matrix 3 is there are also the Facad structure for forming battery, and the emphasis of Facad structure non-present invention, this will not be repeated here.
The back passivating film 2 is blue film of the thickness between 60 ~ 90nm, specially silicon nitride film.On the one hand, it increases
The sunken light effect in solar cell back face promotes cell piece back side transfer efficiency；On the other hand, rear electrode 1 is formed in indigo plant
Film is supreme, has beautified appearance, has preferable observing effect.
Rear electrode 1 includes the back silver electrode 13 being in contact with silicon substrate 3, is formed in the back aluminium main grid carried on the back on passivating film 2
11 and multiple back aluminium pair grid 12, multiple back aluminium pair grid 12 and multiple back aluminium main grids 11 are crossed to form latticed figure, carry on the back silver electricity
Pole 13 is nested in back aluminium main grid 11.Specifically, the preparation process of rear electrode 1 is as follows: the first silk-screen printing on back passivating film 2
Silver paste, then in the surrounding silk-screen printing aluminium paste around silver paste, be sintered later, wherein silver paste penetrate back passivating film 2 downwards and and silicon
Matrix 3 forms contact, constitutes the back silver electrode 13, and the aluminium paste around silver paste then forms the back being located on back passivating film 2
Aluminium main grid 11, the back silver electrode 13 formed after sintering are nested in back aluminium main grid 11.
Further, back aluminium main grid 11 includes multiple first main grids portion 111 and multiple second main grids portion 112, the first main grid
Portion 111 and the second main grid portion 112 are staggeredly set and successively along the length direction arrangement of back aluminium main grid 11, the first main grid portions 111
Width be greater than the second main grid portion 112 width, back silver electrode 13 be nested in the first main grid portion 111.It is specific as shown in Figure 1,
Multiple back aluminium main grids 11 are vertically extended and are parallel to each other respectively, and are set side by side at equal intervals in left-right direction, each back
Aluminium main grid 11 respectively includes be arranged at equal intervals along the vertical direction 6 the first main grid portions 111 of 111,6, the first main grid portion by the
Two main grid portions 112 are connected as one.Back silver electrode 13 in first main grid portion 111 of multiple back aluminium main grids 11 corresponds to each other setting
And linear array in left-right direction, in order to weld photovoltaic welding belt.Wide thin two kinds of back aluminium main grids design reduce aluminium paste consumption and
Shading-area, to promote the transfer efficiency of cell backside.
As shown in Fig. 2, being formed with gap 130 between back silver electrode 13 and the first main grid portion 111.That is, printing
When slurry, there are certain intervals between aluminium paste and silver paste.The gap 130 is located at two on back 13 length direction of silver electrode
Side.It interspaces in advance in back silver electrode 13 and back aluminium main grid 11 along welding direction, is conducive to the welding of battery and photovoltaic welding belt, drops
The crack of low battery prevents from leading to rosin joint and silicon wafer crack due to difference in height.
As shown in figure 3, the outwardly protrusion of the opposite back silver electrode 13 in the outer surface in the first main grid portion 111, first is main
Offering in grid portion 111 makes to carry on the back the window 1110 that silver electrode 13 is exposed, and the width of the window 1110 is less than the width of back silver electrode 13
Degree.Back silver electrode 13 is mainly used for components welding, and the width of back silver electrode 13 is 1.6 ~ 2.0mm, reduces or eliminates component weldering
Connect the underproof risk of pulling force.The width of window 1110 is 1.5 ~ 1.8mm.The width in the second main grid portion 112 is 0.1 ~ 1.5mm.
In addition, as shown in Figure 1, solar battery on piece offers laser positioning hole 113.Specifically, it is respectively at the sun
Can two back leftmost sides aluminium main grid 11(of cell piece edge and two back aluminium main grids 11 of the rightmost side) both ends at distinguish
There is a laser positioning hole 113.That is, being located at the four corners of solar battery sheet, diameter there are four laser positioning holes 113
For 0.3 ~ 0.6mm, it is mainly used for the alignment of Al-BSF and laser slotting line.
Two-sided crystal silicon solar cell sheet of the invention has a characteristic that by using the lesser back passivating film of thickness
2, i.e. improvement back up graphical appearance, to realize the promotion of preferable design and back side transfer efficiency；Carry on the back passivating film 2
(aluminium oxide and silicon nitride film) thickness range is in 60 ~ 90nm, to realize that back side indigo plant film designs；Back side grid line printing, using biography
The silk-screen printing Al-BSF board of system reduces manufacturing cost without increasing additional equipment.Shading surface is reduced in addition, also having
The advantages of product and reduction aluminium paste consumption.
The above embodiments merely illustrate the technical concept and features of the present invention, is a kind of preferred embodiment, and purpose exists
It cans understand the content of the present invention and implement it accordingly in person skilled in the art, protection of the invention can not be limited with this
Range.Equivalent transformation or modification made by all principles according to the present invention, should be covered by the protection scope of the present invention.
Claims (10)
1. a kind of two-sided crystal silicon solar cell sheet, including silicon substrate, back passivating film and rear electrode, the back passivation film
It is laminated on the back side of the silicon substrate, it is characterised in that: the back passivating film is blue film of the thickness between 60 ~ 90nm, the back
Face electrode includes the back silver electrode being in contact with the silicon substrate, is formed in the back aluminium main grid and multiple back carried on the back on passivating film
Aluminium pair grid, the back aluminium pair grid and back aluminium main grid intersection, the back silver electrode are nested in the back aluminium main grid.
2. two-sided crystal silicon solar cell sheet according to claim 1, it is characterised in that: the back aluminium main grid includes more
A first main grid portion and multiple second main grids portion, first main grid portion and second main grid portion are staggeredly set and successively edge
The length direction arrangement of the back aluminium main grid, the width in first main grid portion is greater than the width in second main grid portion, described
Back silver electrode is nested in first main grid portion.
3. two-sided crystal silicon solar cell sheet according to claim 2, it is characterised in that: the back silver electrode and described
Gap is formed between first main grid portion.
4. two-sided crystal silicon solar cell sheet according to claim 3, it is characterised in that: first main grid is opened in portion
Equipped with the window for exposing the back silver electrode.
5. two-sided crystal silicon solar cell sheet according to claim 4, it is characterised in that: the width of the window is less than
The width of the back silver electrode.
6. two-sided crystal silicon solar cell sheet according to claim 5, it is characterised in that: the width of the back silver electrode
For 1.6 ~ 2.0mm, the width of the window is 1.5 ~ 1.8mm.
7. two-sided crystal silicon solar cell sheet according to claim 2, it is characterised in that: the width in second main grid portion
Degree is 0.1 ~ 1.5mm.
8. two-sided crystal silicon solar cell sheet according to claim 1, it is characterised in that: the solar battery on piece
Offer laser positioning hole.
9. two-sided crystal silicon solar cell sheet according to claim 8, it is characterised in that: multiple back aluminium main grids are simultaneously
Column setting, be respectively at the both ends of two back aluminium main grids of solar battery sheet edge has the laser fixed respectively
Position hole.
10. two-sided crystal silicon solar cell sheet according to claim 1, it is characterised in that: the back passivating film is oxygen
Change aluminium and silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811145993.6A CN109300998A (en) | 2018-09-29 | 2018-09-29 | A kind of two-sided crystal silicon solar cell sheet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811145993.6A CN109300998A (en) | 2018-09-29 | 2018-09-29 | A kind of two-sided crystal silicon solar cell sheet |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109300998A true CN109300998A (en) | 2019-02-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811145993.6A Pending CN109300998A (en) | 2018-09-29 | 2018-09-29 | A kind of two-sided crystal silicon solar cell sheet |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802002A (en) * | 2019-03-05 | 2019-05-24 | 成都晔凡科技有限公司 | Imbrication Double-sided battery pack and its manufacturing method |
| CN111129173A (en) * | 2019-12-10 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Step-by-step printing method for back aluminum of double-sided solar cell |
| CN111129172A (en) * | 2019-12-10 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Secondary printing method for back aluminum of double-sided solar cell |
| CN114093959A (en) * | 2021-11-23 | 2022-02-25 | 南京苏煜新能源科技有限公司 | Solar cell and photovoltaic module |
| CN114220875A (en) * | 2021-12-03 | 2022-03-22 | 苏州腾晖光伏技术有限公司 | MWT battery back aluminum electrode and printing screen |
| JP7075535B1 (en) | 2021-08-27 | 2022-05-25 | 上海晶科緑能企業管理有限公司 | Photovoltaic battery cell, battery module and manufacturing process |
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| CN109802002A (en) * | 2019-03-05 | 2019-05-24 | 成都晔凡科技有限公司 | Imbrication Double-sided battery pack and its manufacturing method |
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| CN111129173A (en) * | 2019-12-10 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Step-by-step printing method for back aluminum of double-sided solar cell |
| CN111129172A (en) * | 2019-12-10 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Secondary printing method for back aluminum of double-sided solar cell |
| JP7075535B1 (en) | 2021-08-27 | 2022-05-25 | 上海晶科緑能企業管理有限公司 | Photovoltaic battery cell, battery module and manufacturing process |
| JP2023033059A (en) * | 2021-08-27 | 2023-03-09 | 上海晶科緑能企業管理有限公司 | Photovoltaic solar cell, cell module and manufacturing process |
| US11764313B2 (en) | 2021-08-27 | 2023-09-19 | Shanghai Jinko Green Energy Enterprise Management Co., Ltd. | Photovoltaic solar cell, solar cell module and manufacturing process |
| CN114093959A (en) * | 2021-11-23 | 2022-02-25 | 南京苏煜新能源科技有限公司 | Solar cell and photovoltaic module |
| CN114220875A (en) * | 2021-12-03 | 2022-03-22 | 苏州腾晖光伏技术有限公司 | MWT battery back aluminum electrode and printing screen |
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