CN101226968A - Method for reducing series resistance value of light gathering solar battery and light gathering solar battery obtained by the method - Google Patents

Method for reducing series resistance value of light gathering solar battery and light gathering solar battery obtained by the method Download PDF

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CN101226968A
CN101226968A CN 200710007700 CN200710007700A CN101226968A CN 101226968 A CN101226968 A CN 101226968A CN 200710007700 CN200710007700 CN 200710007700 CN 200710007700 A CN200710007700 A CN 200710007700A CN 101226968 A CN101226968 A CN 101226968A
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electrode
conductor element
light incident
solar cell
body
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易斌宣
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易斌宣
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    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—BASIC ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention provides a method for reducing a series resistance of a photospot solar cell with a doped semiconductor material body, the photospot solar cell which is prepared by the method is equipped with the doped semiconductor material body, the steps are that a weldable electrode conductor element is prepared on a light incident face of the semiconductor body, a weldable electrode conductor element is prepared on the back surface, and the position of the light incident face is staggered with the light incident face electrode conductor element. Other position of the back surface is prepared into an aluminum coating which is used as a back field, an antireflection thin film is prepared on a light reflecting surface, the electrode conductor element is metallized, scribing is done along a staggered position of the light incident face of the semiconductor material and the back electrode conductor element, and at last the photospot solar cell with low series resistances is formed.

Description

降低聚光太阳能电池串联电阻阻值的方法及由该方法获得的聚光太阳能电池技术领域本发明涉及用于降低具有掺杂半导体材料本体的聚光太阳能电池串联电阻阻值的方法；另外，本发明还涉及通过使用这种方法而制造出来的聚光太阳能电池，属于太阳能光伏发电领域。 The method of reducing the series resistance value concentrator solar cell and the concentrating solar cell obtained by the Technical Field The present invention relates to the method having a method for reducing the series resistance value concentrator solar cell doped semiconductor material body; Further, the present the invention also relates to the use of manufactured by this method concentrator solar cell, belonging to the field of solar photovoltaic power generation. 背景技术目前，由于高纯度单、多晶硅的生产技术垄断在几个国外高技术企业中， 晶体硅的价格高居不下，而太阳能光伏发电系统需要大量的单、多晶硅，直接导致太阳能发电成本过高，目前太阳能光伏发电的成本大约4-5元/KwH，是火电成本的IO倍左右，因而太阳能发电项目大面积推广应用受阻。 BACKGROUND At present, due to the high purity single polysilicon production technology monopoly in several foreign high-tech companies, the price of crystalline silicon remains high, while solar photovoltaic systems requires a lot of single, polycrystalline silicon, a direct result of the high cost of solar power, currently the cost of solar photovoltaic power generation is about 4-5 yuan / KwH, about IO times the cost of thermal power, thus solar power projects in large scale disruption. 同时，国内外专家们已经研究发现，晶体硅光伏电池在正常的太阳光强下使用实际上是大材小用，因为晶体硅光伏电池可以承受更高的光强，发出的电流成比例增加而又不至于影响光伏电池寿命，如果通过几十倍甚至几百倍的聚光来提高光伏电池区域的光强，输出相同功率电流的光伏电池面积就能够大幅度縮小，这样一来，太阳能电池板晶体硅的使用量就能大幅度减少，太阳能光伏发电的成本就可以大幅度下降，接近风能发电或者水电的成本，达到用户能够接收的水平。 At the same time, domestic and foreign experts have found that crystalline silicon photovoltaic cells is actually overkill in normal use under strong sunlight, because crystalline silicon photovoltaic cells can withstand higher intensity, increase proportional to the current emitted without getting Effect of photovoltaic battery life, if the condenser is improved by several times or even hundreds of times the light intensity of area of ​​photovoltaic cell, the photovoltaic cell area of ​​the output current of the same power can be reduced considerably, so that, in the crystalline silicon solar cell panel the amount can be significantly reduced, the cost of solar photovoltaic power generation can be greatly decreased, the cost of wind power or hydroelectric close, reaching the level of the user can be received. 但是，人们通过实验发现，普通的太阳能电池在充分散热的情况下，用6 倍聚光太阳光光强，可以得到4.8倍的功率输出，但是如果继续加大光强，发现其实际功率输出并没有继续成线性按比例增长。 However, it was found experimentally that the ordinary solar heat in full, with a strong concentrated solar bare 6 times, 4.8 times of the power can be output, but if it continues to increase the light intensity, and found that the actual output power We did not continue linearly proportional growth. 因此，研究具有高倍率聚光而功率输出能够同步增长的聚光太阳能电池成为光伏科学家的当前艰巨任务，科学家们想了不少的办法，比如刻槽埋栅技术、光刻细栅线、采用更好的半导体材料砷化镓等等。 Therefore, the study has a high rate and condensing power output can be simultaneously increased solar concentrator photovoltaic become arduous task scientists, scientists think a lot of ways, such as grooved buried technology, photolithography thin gate line, using better like gallium arsenide semiconductor material. 但是这些技术由于各种原因基本没有形成大规模生产，也就是说并没有比较好的经济价值。 But these basic techniques for various reasons did not form large-scale production, that is not good economic value. 人们通过大量实验分析，研究得出结论：影响聚光太阳能电池的功率输出主要因素是串联电阻，即半导体的体电阻、表面方块电阻、以及电极导体电阻和电极与硅表面间的接触电阻等综合因素所组成；串联电阻越高，随着光强的升高，聚光电池的转换效率将下降越快。 A large number of people through experimental analysis, the study concluded: The main factors affecting the power output of concentrator solar cells is the series resistance, i.e., resistance of the semiconductor body, the surface sheet resistance, and an electrode conductor resistance and contact resistance between the electrode and the surface of the silicon integrated composition factors; higher series resistance, as the light intensity increases, the conversion efficiency of the condenser battery will fall faster. 半导体的体电阻决定于半导体的材料选取，无法通过加工工艺的改善而改善；表面方块电阻也不是越低越好，表面方块电阻越低，其电子-空穴的复合速度也将呈指数倍率比例上升，不利于大量产生需要的光生电子-空穴对，因而该值也是有一定取值范围的，比如：20Q/口-100Q/口，常规的聚光太阳能电池产品可以做低一些，但不能够做得过低，而且这两个电阻相对于整个串联电阻的组成，占的比例比较小。 The bulk resistance of the semiconductor material of the semiconductor is determined to select can not be improved by improving the process; not a surface sheet resistance as low as possible, the lower surface of the sheet resistance, the electron - hole recombination velocity also exponentially magnification ratio rise, it is not conducive to large to produce the desired photo-generated electron - hole pairs, and therefore the value is a certain range, such as: 20Q / port -100Q / port, a conventional concentrator solar cells do product may be lower, but not It can be made low, and two resistors relative to the overall series resistance of the composition, a relatively small proportion. 如果需要有效地降低串联电阻的阻值，只有对"电极导体电阻"和"电极与硅表面间的接触电阻"进行改善，比如：①、使用更好的电极导电材料；②、 加宽电极导体的宽度；③、采用刻槽埋栅技术；都能够有效减少电极导体电阻的阻值，从而达到减少串联电阻的目的；然而，1、使用更好的导电材料，将使制造成本迅速上升，而且降低的电阻阻值有限；2、对于目前常见的太阳能电池， 基本的要求是电极导体元件应当尽可能窄，以便使光入射面部分受光面积最大化，被电极导体元件掩蔽的光入射面的比率越小，则电池的性能越好， 一般电极导体元件的面积不超过太阳能电池总面积的10%; 3、使用刻槽埋栅技术，即通过减少电极导体宽度，加大电极导体纵深，可以减少一些串联电阻，但同样增加了制造成本，而且目前的生产技术不足以支持大规模批量生产 If you need to effectively reduce the resistor value, only on the "contact resistance between the electrode and the silicon surface" "electrode conductor resistance" and improvements, such as: ①, using better electrode conductive material; ②, widened electrode conductor width; ③, using grooved buried art; the resistance of the electrode can effectively reduce conductor resistance, so as to achieve the purpose of reducing the series resistance; however, one, a better electrically conductive material used, the manufacturing cost will rapidly rise, and the limited reduction resistor; 2, the current common solar cell, the basic requirement is that the electrode conductor element should be as narrow as possible so as to maximize the light receiving portion of the light incident surface area ratio of the electrode conductor being masked light incident surface element the smaller, the better the performance of the battery, the general area of ​​the electrode conductor element does not exceed 10% of the total area of ​​the solar cell; 3, using grooved buried techniques, i.e., by reducing the width of the electrode conductor, the conductor electrode increased depth, can be reduced Some series resistance, but also increases the manufacturing costs, and the current production technology is not sufficient to support large-scale production 现在已经发现，使用简单的加宽电极导体元件宽度等技术，可以得到串联电阻比较小的聚光太阳能电池，但是电极元件加宽了，同时由电极遮盖的电池面积也增大了，并没有获得好的效果。 It has now been found, using a simple electrode conductor element width widening techniques, series resistance can be obtained relatively small concentrator solar cells, but the electrode element is widened, while the cell area covered by the electrode is also increased, and did not get Good results. 发明内容本发明涉及一种用于降低具有掺杂半导体材料本体的聚光太阳能电池的串联电阻阻值的方法，该本体具有两个主要相对面，该两个相对面形成具有一个可焊电极导体元件的光入射面和一个可焊电极导体元件的背面，其中，聚光太阳能电池的光入射面和背面都分别安装有可焊电极导体元件，光入射面以及背面的可焊电极导体元件刚好安置在聚光电池相对应的相对较长的两侧；该方法包括步骤：a) 提供具有p/n节的掺杂半导体本体；b) 在半导体本体光入射面制作可焊电极导体元件，其规格为：可焊电极导体元件宽度0.2mm-0.8mm，电极导体元件长度为与半导体本体的宽度等同，相邻两条可焊电极导体元件之间间隔1.0mm-4mm，相邻两条可焊电极导体元件之间无导体连接；c) 在半导体本体背面制作可焊电极导体元件，其规格为：可焊电极导体元件宽度0.2mm-0. Summary of the Invention The present invention relates to a method for reducing the series resistance value of the semiconductor material has a doping concentrating solar cell body, the body having two opposing major faces, two opposing faces of the formed electrode conductor having a solderable the light incident surface and back surface electrode of a solderable conductor element element, wherein the light incident surface and back surface of concentrator solar cells are respectively attached to solderable conductor element electrodes, the light incident surface and a back surface weld electrode conductor element is disposed just providing a doped semiconductor body having a p / n section a); b) the light incident surface of the semiconductor body may be produced weld electrode conductor element specifications: the method comprising the steps of; concentrator cells in the corresponding opposite long sides : solderable conductor element electrode width of 0.2mm-0.8mm, the length of electrode conductor element equivalent to the width of the semiconductor body, the spacing between adjacent two 1.0mm-4mm solderable conductor element electrodes, two neighboring electrode conductor solderability no connection between the conductor element; c) in the back surface of the semiconductor body may be produced weld electrode conductor element specifications: electrode solderable conductor element width 0.2mm-0. 8mm，可焊电极导体元件长度为与半导体本体的宽度等同，相邻两条电极导体元件之间间隔1.0mm-4mm，其位置正好为与光入射面电极导体元件错开，并且保证所有可焊电极导体元件的错开位置均一致；d) 在半导体本体背面的其他位置制作铝层作为背面场；e) 在光入射面制作减反射薄膜；f) 电极导体元件金属化烧结；g) 使用激光划片机沿上、下可焊电极导体元件错开位置进行划片，形成独立的具有低串联电阻的聚光太阳能电池。 8mm, solderable conductor element electrode length equivalent to the width of the semiconductor body, the spacing between adjacent two 1.0mm-4mm electrode conductor elements, which is exactly the position shifted to the light incident surface electrode conductor elements, and to ensure that all welding electrodes shifting the location of the conductor elements are consistent; D) to produce an aluminum layer as a back surface field in other locations of the semiconductor body rear surface; E) on the light incident surface produced antireflection film; F) electrode conductor element metal sintering; G) using a laser scribing along the machine, the welding electrode can be shifted position of the conductor element diced to form separate concentrator solar cells having a low series resistance. 当然，上述步骤(b、 c、 d、 e)的制作顺序可以相对调整而不影响聚光太阳能电池最后的效果。 Of course, the above steps (b, c, d, e) can be adjusted relative to the manufacturing procedure without affecting the final results concentrator solar cells. 另外，本发明涉及聚光太阳能电池，该电池包括掺杂半导体本体，该本体具有两个主要的相对面，该两个相对面形成具有一个可焊电极导体元件的光入射面和一个可焊电极导体元件的背面，其中，聚光太阳能电池的光入射面和背面都分别安装有可焊电极导体元件，可焊电极导体元件的宽度是0.2mm-0.8mm， 可焊电极导体元件长度为与半导体本体的宽度等同，光入射面以及背面的电极导体元件刚好安置在聚光电池相对应的相对较长的两侧，整个聚光电池的宽度范围是1.2mm-4.8mm，最大长度则与制作聚光太阳能电池的半导体材料的宽度等同，实际的使用长度则根据实际需要来裁定。 Further, the present invention relates to a concentrator solar cell, the cell comprising a doped semiconductor body, the body having two opposing major faces, two opposing faces of the formed electrode having a solderable conductor element and a light incident surface electrode solderable the back conductor element, wherein the light incident surface and back surface of concentrator solar cells are respectively attached to solderable conductor element electrodes, the width of the solderable conductor element electrode is 0.2mm-0.8mm, solderable conductor element length of the electrode and the semiconductor equivalent to the width of the body, the light incident surface and the back surface electrode conductor element disposed immediately on opposite long sides of the condenser battery corresponding to the entire width of the condenser battery is 1.2mm-4.8mm, the maximum length of the solar concentrator and production cell width of the semiconductor material equivalent, the length of the actual use to be decided according to the actual needs. 通过上述方法制造的聚光太阳能电池，半导体本体的光入射面的一侧和背面的另一侧将分别形成一条宽度与聚光太阳能电池长度相等的可焊电极导体元件，而可焊电极导体元件的长度最大值为仅0.8mm，即可焊电极导体元件的导电横截面积=半导体本体材料的宽度X电极导体元件的高度，因而其电阻值远远小于普通太阳能电池的电极导体元件的电阻值，电极导体元件的电阻几乎可以忽略不计，有效降低了聚光太阳能电池的整体串联电阻阻值；而且，由于聚光太阳能电池光入射面的可焊电极导体元件与另一块聚光太阳能电池的背面可焊电极导体元件焊接在一起，属于串联连接方式，即另一块聚光太阳能电池盖住了上一块聚光太阳能电池的电极导体元件，从表面上看，太阳光照射在聚光太阳能电池上的光入射面，无任何物体阻挡，全部被聚光太阳能电池所吸 Produced by the above method concentrator solar cell, and the other side of the back surface side of the light incident surface of the semiconductor body will be formed with a width equal to the length of the concentrator solar cell electrode solderable conductor element, and the element electrode conductor solderability resistance of the electrode conductor element is the maximum length of 0.8mm, a height to width X = cross sectional area of ​​the conductive electrode conductor element bonding material is a semiconductor body electrode conductor elements only, thus its resistance value much smaller than conventional solar cell , the conductor resistance of the electrode element is almost negligible, effectively reducing the overall series resistance of the solar cell concentrator; Further, since the back surface of the light incident surface concentrator solar cell electrode conductor element may be welded one to another concentrator solar cell may together welding electrode conductor element belonging to series connection, i.e., the other a concentrator solar cell element electrode conductor covered on a concentrator solar cell, the surface, the sunlight on the solar cell concentrator the light incident surface, no blocking object, all are attracted concentrator solar cell 收， 更加充分利用了太阳光资源，提高了聚光太阳能电池的发电效率。 Income, more full use of sunlight resources, improve the power generation efficiency concentrator solar cell. 附图说明：图1聚光太阳能电池各种投影面图；图l (a)是聚光太阳能电池的光入射正面图，光入射面4和正面可焊电极导体元件3;图l (b)是聚光太阳能电池的背面图，背面2和背面可焊电极导体元件1，其中背面2己经被蒸镀上一层绝缘薄膜材料；图1 (c)是划片前两片聚光太阳能电池联结在一起的侧面状态，正面可焊电极导体元件3和背面可焊电极导体元件1刚好在5处被错开，激光划片机就在错开处5将聚光太阳能电池片划开，形成两个独立的聚光太阳能电池片；图1 (d)是划片后两片聚光太阳能电池串联在一起的侧面状态，第一片聚光太阳能电池的正面可焊电极导体元件3和第二片聚光太阳能电池的背面可焊电极导体元件1已经牢牢地焊接在一起，由于可焊电极导电元件的宽度非常宽，等同于半导体材料的宽度，而且长度非常短，'长度0.2mm-0.8mm，因而其可焊电极导 BRIEF DESCRIPTION OF DRAWINGS: Figure 1 various projection concentrator solar cell; Figure l (a) is a light incident concentrated solar cell front view, the light incident surface 4 and the positive electrode conductor elements weldable 3; Figure l (b) is a rear view of concentrator solar cell, the back electrode 2 and the back surface solderable conductor elements 1, 2 wherein the rear surface has been deposited on an insulating film material; FIG. 1 (c) is a front dicing two concentrator solar cell state the side joined together, the front electrode solderable conductor element 3 and the back electrode of solderable conductor element 1 are just shifted, laser scribing machine shifted in the condenser at 5 solar cells cut open at 5, forming two separate concentrator solar cells; FIG. 1 (d) is a side scribing state two concentrator solar cells connected together in series, a first front sheet concentrator solar cells solderable conductor element electrode 3 and the second sheet poly the solar cell back surface of the light-conductor element may be welded has a firmly welded together, since the width of the welding electrode conductive element may be very wide, equivalent to the width of the semiconductor material, and the length is very short, '0.2mm-0.8mm length, thus welding electrodes which can be turned 电阻可以忽略不计， 同时第一块聚光太阳能电池光入射面的可焊电极导电元件3被第二块聚光太阳能电池所覆盖，图1 (e)是IO块聚光太阳能电池串联连接的平面图，从表面上看，只有聚光太阳能电池光入射面4暴露在太阳光下，没有任何电极导体元件覆盖，太阳光资源被100%的利用，提高了聚光太阳能电池的发电效率。 Negligible resistance, while a concentrator solar cell of the light incident surface of the welding electrode may be covered with the conductive member 3 is a second block concentrator solar cell, FIG. 1 (e) is a plan view of the IO connector block concentrator solar cells in series , on the surface, only the light incident surface concentrator solar cell 4 is exposed to sunlight, no element electrode conductor covered sunlight resources 100% utilization, and improve the power generation efficiency of the solar cell concentrator. 实施方式：本发明涉及对聚光太阳能电池的改进，这种聚光太阳能电池基于掺杂的半导体材料的本体如单晶硅片。 Embodiment: The present invention relates to improvements in concentrator solar cells, such solar concentrator based on a doped semiconductor material such as monocrystalline silicon body. 本发明还涉及对准备这种聚光太阳能电池的可焊电极导体元件方法的改进。 The present invention also relates to an improved method of solderable conductor element electrode prepared in such a concentrator solar cell. 根据优选实施案例，聚光太阳能电池是用掺杂的硅用作有源半导体设备制成的，取125mmX125mm的方形、厚度为22(Him的常规直拉单晶硅片，这种晶片可以在市场上获得。通过蚀刻、构造以及清洗晶片等常规工艺，然后将该硅晶片的光入射面在800-900。C通过使用磷化合物，如POCl3掺杂，进行重扩散，将其制成n型并形成作为聚光太阳能电池的有源组分的基本p/n节，表面电阻的值为30Q/口左右。通过掩膜，将可焊的银浆应用在掺杂半导体本体的光入射表面，形成若干条宽度为0.5mm,任意两条焊电极导体元件之间的净空为2mm，长度为125mm 的可焊电极导体元件，而且相邻两条可焊电极导体元件之间没有任何导体连接。同样，通过掩膜，将可焊的银浆应用在掺杂半导体本体的背面，形成若干条宽度为0.5mm，两条之间的间隔为2mm，长度为125mm的可焊电极导体元件，掺杂半导 According to a preferred embodiment of the case, as an active concentrator solar cell is a semiconductor device made of silicon doped taken 125mmX125mm square, a thickness of 22 (Him conventional Czochralski single crystal silicon wafer, such a wafer may be in the market obtained on. by etching, wafer cleaning structure and a conventional process, and the light incident surface of a silicon wafer by using a phosphorus compound such as POCl3 doped 800-900.C, re-diffusion, which is made of n-type and the active component is formed as a concentrator solar cell is substantially p / n section is about 30Q / port surface resistance. through a mask, the solder paste will be applied in doping the light incident surface of the semiconductor body, is formed several pieces of a width of 0.5mm, the clearance between any two conductive elements of the welding electrode 2mm, a length of 125mm solderable conductor element electrodes, and not between the two welding electrodes may be any conductor elements adjacent conductors. Similarly, through a mask, the solder paste will be applied in doping the back surface of the semiconductor body, forming a plurality of strips of 0.5mm width spacing between the two, as 2mm, a length of 125mm solderable conductor element electrode doped semiconductor 本体的背面可焊电极导体元件的位置刚好与光入射表面的可焊电极导体元件错开，并且所有可焊电极导体元件的错开位置均一致。在掺杂半导体本体的背面没有应用银浆的位置，蒸镀一层铝，用于生成背电场。通常使用的高温烧结工艺方法等措施，应用于以上材料，使银浆牢固可靠连接在硅表面，并在背面形成背电场。采用常规的工艺方法在聚光太阳能电池的光入射表面沉积一层减反射薄膜。应用激光划片机，沿光入射面可焊电极导体元件和背面可焊电极导体元件的错开处划开，形成独立的长度为125mm，宽度为2.5mm的具有低串联电阻的聚光太阳能电池。聚光太阳能电池使用的半导体材料本体不但包含掺杂硅，还可以包含其它任何半导体材料，其他半导体材料的例子是砷化镓、磷化铟、硒化铜铟、锗以及氧化锌。可焊电极导体元件是自由电子流动的 The position of the rear surface of the body solderable conductor element electrode coincides with solderable conductor element electrode of the light incident surface shifted and shifted all position welding electrode conductor elements are consistent. No location application of the silver paste on the back surface of the doped semiconductor body, vapor deposition layer of aluminum, for generating an electric field back high temperature sintering method measures generally used, applied to the above material, so solid and reliable connection paste on the silicon surface, and the back-surface field is formed on the back surface. in the conventional process methods converging the light incident surface of the solar cell is deposited a layer antireflection film. laser scribing machine, along the light incident surface may be shifted at the welding electrode and the back conductor elements solderable conductor element electrode cut open to form a separate length of 125mm, 2.5mm width of the solar concentrator having a low series resistance in semiconductor material of the body not only concentrator solar battery comprising doped silicon, it may further comprise any other semiconductor materials, examples of other semiconductor materials are gallium arsenide phosphide indium, copper indium selenide, germanium, and zinc oxide. solderable conductor element is an electrode of a free electron flow 体，而且是聚光太阳能电池串联连接方式中一块聚光太阳能电池上表面与另一块聚光太阳能电池的下表面焊接之处，必须保证该元件的高导电性能和高可焊接性能，所用金属材料主要有铝、 银、钛、镍等，或是这些金属的综合应用。 Body, but also on concentrator solar cells connected in series in a manner concentrator solar cell at the soldering surface and the other surface of a concentrator solar cell, must ensure a high electrical conductivity of the element and high performance can be welded, the metal material there are aluminum, silver, titanium, nickel, or integrated application of these metals.

Claims (9)

1. 一种用于降低具有掺杂半导体材料本体的聚光太阳能电池的串联电阻阻值的方法，该本体具有两个主要相对面，该两个相对面形成具有一个可焊电极导体元件的光入射面和一个可焊电极导体元件的背面，其中，聚光太阳能电池的光入射面和背面都分别安装有可焊电极导体元件，光入射面以及背面的可焊电极导体元件刚好安置在聚光电池相对应的两侧；该方法包括步骤： a)提供具有p/n节的掺杂半导体本体； b)在掺杂半导体本体光入射面制作可焊电极导体元件，其规格为：可焊电极导体元件宽度0.2mm-0.8mm，可焊电极导体元件长度为与半导体本体的宽度等同，相邻两条可焊电极导体元件之间间隔1.0mm-4mm，相邻两条可焊电极导体元件之间无导体连接； c)在掺杂半导体本体背面制作可焊电极导体元件，其规格为：可焊电极导体元件宽度0.2mm-0.8mm，可焊电极导 1. A method for reducing the series resistance value of the semiconductor material has a doping concentrating solar cell body, the body having two opposing major faces, two opposing faces of the formed light having a solderable conductor element electrode incident surface and back surface electrode of a solderable conductor element, wherein the light incident surface and back surface of concentrator solar cells are respectively attached to solderable conductor element electrodes, the light incident surface and a back surface weld electrode conductor element disposed just concentrator cells corresponding sides; the method comprising the steps of: a) providing a doped semiconductor body having a p / n sections; b) doping the semiconductor body in the light incident surface may be produced weld electrode conductor element specifications: electrode solderable conductor element width 0.2mm-0.8mm, solderable conductor element electrode length equivalent to the width of the semiconductor body, the spacing between adjacent two 1.0mm-4mm solderable conductor element electrodes, between two adjacent solderable conductor element electrode no conductor is connected; c) produced in the doped semiconductor body back surface electrode conductor solderability element specifications: electrode solderable conductor element width 0.2mm-0.8mm, the welding electrode can be turned 体元件长度为与半导体本体的宽度等同，相邻两条可焊电极导体元件之间间隔1.0mm-4mm，其位置正好为与光入射面电极导体元件错开，并且保证所有可焊电极导体元件的错开位置均一致； d)在掺杂半导体本体背面的其他位置制作铝层作为背面场； e)在光入射面制作减反射薄膜； f)电极导体元件金属化烧结； g)应用激光划片机沿掺杂半导体材料光入射面可焊电极导体元件及背面可焊电极导体元件错开位置进行划片，最终形成独立的具有低串联电阻的聚光太阳能电池； Element length equivalent to the width of the semiconductor body, the spacing between adjacent two 1.0mm-4mm solderable conductor element electrodes, a position exactly offset the light incident surface electrode conductor element, and ensure that all elements of the electrode conductor solderability shifted position are consistent; D) to produce an aluminum layer as a back surface field in another position the back surface of the semiconductor body, the doped; E) making the light incident surface antireflection film; F) sintering the metal electrode conductor element; G) laser scribing machine doped semiconductor material along the light incident surface solderable conductor element and a back electrode welding electrode conductor element may be displaced positions diced, forming independent concentrator solar cells having a low series resistance;
2、 才艮据;〖又利要求1所述的方法，其中步骤（b、 c、 d、 e)的制作顺序可以作相对调整而不影响聚光太阳能电池最后的效杲。 2, according to Gen only; 〖and method of claims 1, wherein the step (b, c, d, e) production order can be adjusted relative to each other without affecting the final effect Gao concentrator solar cells.
3、 根据权利要求l、 2所述的方法，其中半导体材料本体包含硅、砷化镓、磷化铟、硒化铜铟、锗以及氧化锌构成的组中的一种。 3, according to claim L, The method of claim 2, wherein the body of semiconductor material comprises silicon, gallium arsenide, indium phosphide, one of the group copper indium, germanium, and zinc oxide in selenide.
4、 根据权利要求l、 2、 3所述的方法，其中可焊电极导体元件所用金属材料主要有铝、银、钛、镍等，或是这些金属的综合应用。 4, according to claim L, method 2, claim 3, wherein the solderable conductor element electrode metal materials are aluminum, silver, titanium, nickel, or integrated application of these metals.
5、 一种聚光太阳能电池，包括掺杂半导体本体，该本体具有两个主要的相对面，该两个相对面形成具有一个可悍电极导体元件的光入射面和一个可焊电极导体元件的背面，以及该掺杂半导体材料本体还在主要相对面之间具有多个侧面，其中，聚光太阳能电池的光入射面和背面都分别安装有可坪电极导体元件，可焊电极导体元件的宽度是0. 2mm-0. 8mm,可焊电极导体元件长度为与半导体本体的宽度等同，光入射面以及背面的可焊电极导体元件刚好安置在聚光电池相对应的较长的两側，整个聚光电池的宽度是1.2mm-4. 8mm,最大长度则与半导体材料的宽度等同，实际的使用长度则根据实际需要来裁定。 5. A concentrator solar cell, comprising a doped semiconductor body, the body having two main opposite faces, the two opposing surfaces forming the light incident surface and a solderable conductor element having an electrode defended electrode conductor element the back surface, and a plurality of doped semiconductor material body having opposite major side surfaces between surfaces still, wherein the light incident surface and the back surface of the solar cell are respectively concentrator width Ping electrode conductor elements, solderable conductor element electrode is mounted is 0. 2mm-0. 8mm, solderable conductor element electrode length equivalent to the width of the semiconductor body, the light incident surface and a back surface weld electrode conductor element disposed just two longer sides corresponding concentrator cells, the entire poly the width of the photovoltaic cell is 1.2mm-4. 8mm, the maximum length equivalent to the width of the semiconductor material, the actual length is used to decide according to actual needs.
6、 根据权利要求5所述的聚光太阳能电池，其中半导体材料本体包含硅、 砷化镓、磷化铟、硒化铜铟、锗以及氧化锌构成的组中的一种。 6, concentrator solar cell according to claim 5, wherein the body of semiconductor material comprises one of the group of silicon, gallium arsenide, indium phosphide, copper indium selenide, germanium, and zinc oxide in.
7、 根据权利要求5、 6所述的聚光太阳能电池，其中可焊电极导体元件所用金属材料主要有铝、银、钛、镍等，或是这些金属的综合应用。 7, concentrating solar cell according to claim 5, claim 6, wherein the solderable conductor element electrode metal materials are aluminum, silver, titanium, nickel and the like are used, these metals or integrated application.
8、 根据权利要求5、 6、 7所述的聚光太阳能电池，其中半导体材料体是掺杂晶片。 8, concentrator solar cell according to claim 5, 6, 7, wherein the body of semiconductor material doped wafer.
9、 用在权利要求1、 2、 3、 4中任何一个所述的方法获得的聚光太阳能电池。 9, used in the claims 1, 2, 3, 4 The method of any one of the concentrating solar cell is obtained.
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Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012766B2 (en) 2009-11-12 2015-04-21 Silevo, Inc. Aluminum grid as backside conductor on epitaxial silicon thin film solar cells
US9214576B2 (en) 2010-06-09 2015-12-15 Solarcity Corporation Transparent conducting oxide for photovoltaic devices
US9773928B2 (en) 2010-09-10 2017-09-26 Tesla, Inc. Solar cell with electroplated metal grid
US9800053B2 (en) 2010-10-08 2017-10-24 Tesla, Inc. Solar panels with integrated cell-level MPPT devices
US9054256B2 (en) 2011-06-02 2015-06-09 Solarcity Corporation Tunneling-junction solar cell with copper grid for concentrated photovoltaic application
WO2013020590A1 (en) * 2011-08-09 2013-02-14 Kioto Photovoltaics Gmbh Rectangular solar cell and associated solar cell arrangement
AU2013326971B2 (en) 2012-10-04 2016-06-30 Tesla, Inc. Photovoltaic devices with electroplated metal grids
US9865754B2 (en) 2012-10-10 2018-01-09 Tesla, Inc. Hole collectors for silicon photovoltaic cells
US9281436B2 (en) 2012-12-28 2016-03-08 Solarcity Corporation Radio-frequency sputtering system with rotary target for fabricating solar cells
US9412884B2 (en) 2013-01-11 2016-08-09 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US10074755B2 (en) 2013-01-11 2018-09-11 Tesla, Inc. High efficiency solar panel
US9219174B2 (en) 2013-01-11 2015-12-22 Solarcity Corporation Module fabrication of solar cells with low resistivity electrodes
US9624595B2 (en) 2013-05-24 2017-04-18 Solarcity Corporation Electroplating apparatus with improved throughput
EP3149775B1 (en) * 2014-05-27 2019-12-04 SunPower Corporation Shingled solar cell module
US10309012B2 (en) 2014-07-03 2019-06-04 Tesla, Inc. Wafer carrier for reducing contamination from carbon particles and outgassing
US10236406B2 (en) 2014-12-05 2019-03-19 Solarcity Corporation Systems and methods for targeted annealing of photovoltaic structures
US9590132B2 (en) 2014-12-05 2017-03-07 Solarcity Corporation Systems and methods for cascading photovoltaic structures
US9899546B2 (en) 2014-12-05 2018-02-20 Tesla, Inc. Photovoltaic cells with electrodes adapted to house conductive paste
US10043937B2 (en) 2014-12-05 2018-08-07 Solarcity Corporation Systems and method for precision automated placement of backsheet on PV modules
US9991412B2 (en) 2014-12-05 2018-06-05 Solarcity Corporation Systems for precision application of conductive adhesive paste on photovoltaic structures
US9685579B2 (en) 2014-12-05 2017-06-20 Solarcity Corporation Photovoltaic structure cleaving system
US9761744B2 (en) 2015-10-22 2017-09-12 Tesla, Inc. System and method for manufacturing photovoltaic structures with a metal seed layer
US9842956B2 (en) 2015-12-21 2017-12-12 Tesla, Inc. System and method for mass-production of high-efficiency photovoltaic structures
US9496429B1 (en) 2015-12-30 2016-11-15 Solarcity Corporation System and method for tin plating metal electrodes
US10115838B2 (en) 2016-04-19 2018-10-30 Tesla, Inc. Photovoltaic structures with interlocking busbars

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3769091A (en) * 1972-03-31 1973-10-30 Us Navy Shingled array of solar cells
US4617421A (en) * 1985-04-01 1986-10-14 Sovonics Solar Systems Photovoltaic cell having increased active area and method for producing same
JPS62195185A (en) * 1986-02-21 1987-08-27 Sharp Corp Amorphous solar battery module
DE3708548C2 (en) * 1987-03-17 1989-05-03 Telefunken Electronic Gmbh, 7100 Heilbronn, De
JPH06268241A (en) * 1993-03-15 1994-09-22 Fuji Electric Co Ltd Thin-film solar cell and manufacture thereof
US6239352B1 (en) * 1999-03-30 2001-05-29 Daniel Luch Substrate and collector grid structures for electrically interconnecting photovoltaic arrays and process of manufacture of such arrays
NL1022489C2 (en) * 2003-01-24 2004-07-28 Stichting Energie Coupling device for thin-film photovoltaic cells.

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