CN105552144B - A kind of front electrode of crystal silicon solar batteries - Google Patents
A kind of front electrode of crystal silicon solar batteries Download PDFInfo
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- CN105552144B CN105552144B CN201610058497.1A CN201610058497A CN105552144B CN 105552144 B CN105552144 B CN 105552144B CN 201610058497 A CN201610058497 A CN 201610058497A CN 105552144 B CN105552144 B CN 105552144B
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- front electrode
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 229910000679 solder Inorganic materials 0.000 claims abstract description 33
- 238000003475 lamination Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 19
- 238000007639 printing Methods 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of front electrode of crystal silicon solar batteries, a plurality of secondary grid line including spaced arrangement in the first direction, the front electrode also includes the thin grid line of M bars of spaced arrangement in a second direction, the thin grid line is electrically connected with the secondary grid line, the width of the thin grid line is 0.10~0.25mm, wherein, M=10~20；Wherein, spaced N number of solder contacts are additionally provided with each thin grid line, the solder contacts lamination is arranged on the thin grid line and is electrically connected with the thin grid line, the solder contacts are shaped as circle, the scope of the circular diameter is 0.2~1mm, and the circular diameter is more than the width of the thin grid line；Wherein, N=5~15.The electrode structure at right side, which can reach, not only to have been reduced shading-area but also had ensured the smooth derived purpose of electric current.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of front electrode of crystal silicon solar batteries.
Background technology
Crystal silicon solar batteries are a kind of electronic components that solar energy can be transformed into electric energy.Crystalline silicon class is too
The preparation of positive energy battery is typically by processes such as making herbs into wool, diffusion, plated film, silk-screen printing, sintering.Making herbs into wool is divided into monocrystalline, polycrystalline system
Suede, single crystal battery are to form pyramid matte in silicon chip surface using the method for alkali making herbs into wool, and polycrystalline battery uses the side of acid etch
Method forms pit matte in silicon chip surface, and the matte of silicon face can increase absorption of the sunshine in battery surface, reach sunken light
Effect；Diffusing procedure is to be internally formed P-N junction to silicon chip by way of thermal diffusion, so when there is light irradiation, inside silicon chip
Can forms voltage, is the basis that solar cell generates electricity；Coating process is to reduce minority carrier in battery surface
It is compound, the conversion efficiency of crystal silicon solar cell sheet can be improved；Silkscreen process is exactly to make the electricity of solar cell
Pole, so when light irradiation, can exports electric current.Silk-screen printing is most widely used one in prepared by present crystal silicon battery
Then kind technique, process sequence carry out the printing and drying of Al-BSF, finally carried out first to carry out backplate printing and drying
The printing of front electrode, drying, are being sintered, and allow preparing silver paste that electrode uses and battery forms contact.
In the front electrode of crystal silicon solar batteries, electrode structure generally includes crisscross main gate line and secondary grid line,
Main gate line is electrical connected with secondary grid line.When there is illumination, cell piece will produce electric current, and electric current passes through internal emitter flow chart
Face electrode pair grid line, collected via secondary grid line and then be flowed in battery main gate line and exported.Electric current is collected in secondary grid line
During can produce loss, it is this that we are known as the power loss of resistance.Battery main gate line and secondary grid line be in battery by
Smooth surface, a part of light irradiation will necessarily be so blocked in battery surface, so as to reduce the effective area of shining light of battery, this part
We term it optical loss for loss.Whether p-type or N-type cell, as long as battery front side has electrode structure, it is necessary to examine
Consider continuing to optimize for electrode structure, not only reduce shading-area to reach but also ensure the smooth derived purpose of electric current.
In existing electrode structure at right side, the quantity of main gate line is usually 3, and its width is 1.5mm or so；Secondary grid line
Quantity is usually 80~100, and its width is 40 μm or so.The wider width of main gate line so that the weldering of front electrode and battery
Band can weld well, but shading-area is also larger.In recent years, in order to reduce the shading-area of front electrode, carry in the industry
A kind of electrode structure at right side of no main grid is gone out, mainly 3 main gate lines in electrode structure at right side is removed, only retain secondary grid
Line, after battery completes, directly welded using superfine cylindrical welding with secondary grid line, by the direct derived current of welding.
Superfine welding is with the welding process of secondary grid line, rosin joint or nothing are caused because the width of secondary grid line is smaller, secondary grid line is excessively low
The abnormal conditions of method welding, make the power of photovoltaic module reduce.
The content of the invention
In view of the shortcomings of the prior art, the invention provides a kind of front electrode of crystal silicon solar batteries, this is just
Face electrode structure, which can reach, not only to have been reduced shading-area but also had ensured the smooth derived purpose of electric current.
To achieve these goals, present invention employs following technical scheme：
A kind of front electrode of crystal silicon solar batteries, including a plurality of secondary grid line of spaced arrangement in the first direction,
Wherein, the front electrode also includes the thin grid line of M bars of spaced arrangement in a second direction, the thin grid line and the secondary grid
Line is electrically connected with, and the width of the thin grid line is 0.10~0.25mm；Wherein, M=10~20；Wherein, on each thin grid line also
Be provided with spaced N number of solder contacts, the solder contacts lamination be arranged on the thin grid line and with the thin grid
Line is electrically connected with, and the solder contacts are shaped as circle, and the scope of the circular diameter is 0.2~1mm, and the circle
The diameter of shape is more than the width of the thin grid line；Wherein, N=5~15.
Preferably, the solder contacts are formed on the thin grid line by secondary printing technique.
Preferably, a plurality of secondary grid line equidistantly arranges in the first direction, between the thin grid line of M bars waits in a second direction
Away from arrangement, the second direction is mutually perpendicular to the first direction.
Preferably, the quantity of the secondary grid line is 80~100.
Preferably, the solder contacts are arranged at the position that the thin grid line intersects with the secondary grid line.
Preferably, equidistantly arranged on length direction of the N number of solder contacts on each thin grid line along the thin grid line.
Preferably, the array distribution that all solder contacts in the front electrode arrange in N rows × M.
Preferably, the width of the thin grid line is 0.2mm；The a diameter of 0.8mm of circular solder contacts；Wherein, M=
10, N=10.
Compared to prior art, in the front electrode of crystal silicon solar batteries provided in an embodiment of the present invention, usage quantity
More smaller thin grid lines of width replace main gate line of the prior art, and generally shading-area is smaller, reduces light loss, and
And greater number of thin grid line is evenly distributed on solar battery front side so that the electric current that secondary grid line is collected can be more successfully
Export, reduces power attenuation；In addition, being provided with the larger circular weld contact of area in thin grid line superimposed layer, weldering is added
The contact area of contact and the height of pad, when welding welding, the problem of less welding is with welding of battery film exception.
Brief description of the drawings
Fig. 1 is the structural representation of front electrode of solar battery provided in an embodiment of the present invention；
Fig. 2 is the enlarged diagram of part A in Fig. 1.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in detail.The example of these preferred embodiments is illustrated in the accompanying drawings.Shown in accompanying drawing and according to
What the embodiments of the present invention of accompanying drawing description were merely exemplary, and the present invention is not limited to these embodiments.
Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only
Show and according to the solution of the present invention closely related structure and/or processing step, and eliminate little with relation of the present invention
Other details.
Refering to Fig. 1 and Fig. 2, a kind of front electrode of crystal silicon solar batteries is present embodiments provided, as shown in figure 1, should
Front electrode includes (Y-direction in such as Fig. 1) spaced and arranged in parallel a plurality of secondary grid line 10 in the first direction, along second
The spaced and arranged in parallel a plurality of thin grid line 20 in direction (X-direction in such as Fig. 1), a plurality of secondary grid line 10 with it is described more
The thin grid line 20 of bar is electrically connected with each other.Wherein, secondary grid line 10 is mainly used in collecting photogenerated current caused by solar cell, thin grid
Line 20 is used to the electric current that secondary grid line 10 is collected collecting output.Further, it is additionally provided with each thin grid line 20 spaced
Multiple solder contacts 30, the lamination of solder contacts 30 is arranged on the thin grid line 20 and electrical with the thin grid line 20
Connection, the solder contacts 30 are shaped as circle.The solder contacts 30 are mainly used for after battery completes and weldering
Welding connects.
Wherein, the quantity of secondary grid line 10 can be selected in the range of 80~100, and its width can be selected 30~50
In the range of μm.The quantity M of thin grid line 20 can be selected in the range of 10~20, and its width D can select 0.10~
In the range of 0.25mm.The quantity N of the solder contacts 30 set on each thin grid line 20 can be selected in the range of 5~15,
The diameter R of solder contacts 30 can be selected in the range of 0.2~1mm, and to meet that the diameter R of solder contacts 30 is more than carefully
The width D of grid line 20.In the present embodiment, the quantity of secondary grid line 10 is 90, and the width of secondary grid line 10 is 40 μm；Thin grid line 20
Quantity M=10, the width D of thin grid line 20 is 0.2mm；The quantity N=10 of solder contacts 30 on each thin grid line 20, welding
Contact 30 is shaped as circle, and its diameter R is 0.8mm.
Wherein, the lamination of solder contacts 30 is arranged on the thin grid line 20.Specifically, electrode structure at right side is being prepared
When, secondary grid line 10 and thin grid line 20 are prepared by one-step print technique first, then again by secondary printing technique in institute
State and prepare solder contacts 30 on thin grid line 20.
In the present embodiment, as shown in figure 1, a plurality of secondary grid line 10 is in the first direction between (Y-direction in such as Fig. 1)
Away from arrangement, the thin grid line 20 of M bars in a second direction (X-direction in such as Fig. 1) equidistantly arrange, the second direction with it is described
First direction is mutually perpendicular to.Further, the solder contacts 30 are arranged at the thin grid line 20 and intersected with the secondary grid line 10
Position, also, equidistantly arranged on length direction of the N number of solder contacts 30 on each thin grid line 20 along the thin grid line 20
Row.
More specifically, in the present embodiment, as shown in figure 1, between each carefully arrangement of N number of solder contacts 30 on grid line 20
Away from all equal, therefore, in whole electrode structure at right side, all solder contacts 30 in N rows × M row array distribution.
The front electrode for the crystal silicon solar batteries that above example provides can be effectively reduced shading-area.With the sun
Exemplified by the size of energy battery front side is 156mm × 156mm square, according to the front electrode and the present invention of existing three main grid
The electrode structure at right side that embodiment provides calculates shading-area respectively：
1st, the electrode structure at right side of existing three main grid.The knot of the wide main gate line of conventional three 1.5mm, 90 40 μm of secondary grid lines
In structure, main gate line may be designed as hollow out form, and main grid all areas can still burn-on when reducing the silver paste that printing uses, but welding
The welding of 1.5mm width or so and keep the sun off.Therefore it is 1.5mm × 3 × 156mm=to the shielded area of sunlight at main grid
702mm2；Secondary grid line and 4 frame shielded areas are 0.04mm × (90+2) × (153.5mm-1.5mm × 3)+2 × 153.5mm
× 0.04mm=560.6mm2.Total shielded area of conventional three main grid front electrodes is 1262.6mm2。
2nd, electrode structure at right side provided in an embodiment of the present invention.According to example specifically, the quantity of secondary grid line is 90,
Its width is 40 μm；The quantity of thin grid line is 10, and its width is 0.2mm；The quantity of solder contacts on each thin grid line is
10, solder contacts are shaped as circle, and its diameter R is 0.8mm.Then：10 thin grid line is 0.2mm to the shielded area of sunlight
× 10 × 156mm=312mm2；Secondary grid line and 4 frames blocking as 0.04mm × (90+2) × (153.5mm- to sunlight
0.2mm × 10)+0.04mm × 2 × 153.5mm=569.8mm2, the circular pattern of 0.8mm diameters is to sunlight in addition to thin grid line
Block as [π × 0.42mm2-(0.8mm-0.2mm)×0.04mm-π×0.42mm2×29°×2÷360°-0.2×0.4×
Sin14.5] × 100=37.76mm2, total shielded area is 312mm2+569.8mm2+37.76mm2=919.56mm2.The present invention
Compared to the front electrode of existing three main grid, the shading-area of its reduction is the front electrode that embodiment provides：
1262.6mm2-919.56mm2=343.04mm2。
In summary, in the front electrode for the crystal silicon solar batteries that above example provides, the more width of usage quantity
Smaller thin grid line replaces main gate line of the prior art, and generally shading-area is smaller, reduces light loss, and most
The thin grid line of amount is evenly distributed on solar battery front side so that the electric current that secondary grid line is collected can be exported more successfully, be dropped
Low power attenuation；In addition, being provided with the larger circular weld contact of area in thin grid line superimposed layer, connecing for pad is added
Contacting surface is accumulated and the height of pad, when weld welding, the problem of less welding and welding of battery film exception.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply and deposited between these entities or operation
In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Nonexcludability includes, so that process, method, article or equipment including a series of elements not only will including those
Element, but also the other element including being not expressly set out, or it is this process, method, article or equipment also to include
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Other identical element also be present in process, method, article or equipment including the key element.
Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art
For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as the protection domain of the application.
Claims (3)
1. a kind of front electrode of crystal silicon solar batteries, including a plurality of secondary grid line of spaced arrangement in the first direction, its
It is characterised by,
The front electrode also includes the thin grid line of M bars of spaced arrangement in a second direction, the thin grid line and the secondary grid
Line is electrically connected with, and the width of the thin grid line is 0.2mm；
Wherein, spaced N number of solder contacts are additionally provided with each thin grid line, the solder contacts lamination is arranged on described
It is electrically connected with thin grid line and with the thin grid line, the solder contacts are shaped as circle, and the circular diameter is
0.8mm；
Wherein, the solder contacts are formed on the thin grid line by secondary printing technique, and the solder contacts are arranged at institute
State the position that thin grid line intersects with the secondary grid line；
Wherein, all solder contacts in the front electrode are in the array distribution of N rows × M row, M=10, N=10.
2. the front electrode of crystal silicon solar batteries according to claim 1, it is characterised in that a plurality of secondary grid line edge
First direction equidistantly arranges, and the thin grid line of M bars equidistantly arranges in a second direction, the second direction and the first party
To being mutually perpendicular to.
3. the front electrode of crystal silicon solar batteries according to claim 2, it is characterised in that the quantity of the secondary grid line
For 80~100.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058497.1A CN105552144B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
| PCT/CN2016/092191 WO2017128666A1 (en) | 2016-01-28 | 2016-07-29 | Crystalline silicon solar cell and front electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058497.1A CN105552144B (en) | 2016-01-28 | 2016-01-28 | A kind of front electrode of crystal silicon solar batteries |
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| CN105552144A CN105552144A (en) | 2016-05-04 |
| CN105552144B true CN105552144B (en) | 2018-02-23 |
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| WO (1) | WO2017128666A1 (en) |
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| CN105552144B (en) * | 2016-01-28 | 2018-02-23 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
| CN109599447A (en) * | 2019-01-21 | 2019-04-09 | 南通苏民新能源科技有限公司 | A kind of novel solar cell slices, component and production method |
| CN109873054B (en) * | 2019-04-04 | 2024-06-07 | 乐山新天源太阳能科技有限公司 | Production line of black silicon solar cells |
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|---|---|---|---|---|
| CN103178129A (en) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | Solar cell and corresponding electrode screen printing plate |
| CN103337528A (en) * | 2013-05-30 | 2013-10-02 | 海南英利新能源有限公司 | Solar cell |
| CN103794663A (en) * | 2014-01-29 | 2014-05-14 | 常州天合光能有限公司 | Solar battery front electrode structure |
| CN104576781A (en) * | 2015-01-27 | 2015-04-29 | 苏州阿特斯阳光电力科技有限公司 | Solar cell |
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| US20100000602A1 (en) * | 2007-12-11 | 2010-01-07 | Evergreen Solar, Inc. | Photovoltaic Cell with Efficient Finger and Tab Layout |
| CN101950761A (en) * | 2010-09-29 | 2011-01-19 | 上海晶澳太阳能科技有限公司 | Novel solar cell and solar photovoltaic module composed thereof |
| CN204332976U (en) * | 2015-01-27 | 2015-05-13 | 苏州阿特斯阳光电力科技有限公司 | A kind of electrode structure at right side of solar cell |
| CN105679849B (en) * | 2016-01-28 | 2018-11-02 | 黄河水电光伏产业技术有限公司 | A kind of crystal silicon solar batteries |
| CN105529373B (en) * | 2016-01-28 | 2018-01-16 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
| CN105633177A (en) * | 2016-01-28 | 2016-06-01 | 黄河水电光伏产业技术有限公司 | Crystalline silicon solar cell |
| CN105679850A (en) * | 2016-01-28 | 2016-06-15 | 黄河水电光伏产业技术有限公司 | Crystalline silicon solar cell |
| CN105552144B (en) * | 2016-01-28 | 2018-02-23 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
| CN105529374A (en) * | 2016-01-28 | 2016-04-27 | 黄河水电光伏产业技术有限公司 | Positive electrode of crystalline silicon solar cell |
| CN105702755B (en) * | 2016-01-28 | 2018-02-23 | 黄河水电光伏产业技术有限公司 | A kind of front electrode of crystal silicon solar batteries |
-
2016
- 2016-01-28 CN CN201610058497.1A patent/CN105552144B/en active Active
- 2016-07-29 WO PCT/CN2016/092191 patent/WO2017128666A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178129A (en) * | 2011-12-23 | 2013-06-26 | 昆山允升吉光电科技有限公司 | Solar cell and corresponding electrode screen printing plate |
| CN103337528A (en) * | 2013-05-30 | 2013-10-02 | 海南英利新能源有限公司 | Solar cell |
| CN103794663A (en) * | 2014-01-29 | 2014-05-14 | 常州天合光能有限公司 | Solar battery front electrode structure |
| CN104576781A (en) * | 2015-01-27 | 2015-04-29 | 苏州阿特斯阳光电力科技有限公司 | Solar cell |
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| Publication number | Publication date |
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| CN105552144A (en) | 2016-05-04 |
| WO2017128666A1 (en) | 2017-08-03 |
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