CN107425085A - A kind of preparation method of the back contacts crystal silicon solar batteries of passivating back - Google Patents
A kind of preparation method of the back contacts crystal silicon solar batteries of passivating back Download PDFInfo
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- CN107425085A CN107425085A CN201710202733.7A CN201710202733A CN107425085A CN 107425085 A CN107425085 A CN 107425085A CN 201710202733 A CN201710202733 A CN 201710202733A CN 107425085 A CN107425085 A CN 107425085A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 26
- 239000010703 silicon Substances 0.000 title claims abstract description 26
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 238000007650 screen-printing Methods 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- 238000007639 printing Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 36
- 239000002253 acid Substances 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000004080 punching Methods 0.000 claims description 6
- 239000002002 slurry Substances 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 11
- 238000005245 sintering Methods 0.000 abstract description 6
- 230000004446 light reflex Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000005611 electricity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- -1 thickness 5-20nm Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of preparation method of the back contacts crystal silicon solar batteries of passivating back, step includes laser boring, making herbs into wool, diffusion, etching, plate backside passivation film, plate back protection film, plate front surface antireflection film, laser grooving, silk-screen printing, sintering, the front electrode of manufactured cell piece is guided to the back side by laser boring, increase positive effective illuminating area, plate last layer passivating film in the back side, inside hole and the back side is protected by layer protecting film layer again, guiding is avoided to the front electrode at the back side and the Al-BSF short circuit at the back side, reduce electric leakage, and this tunic passes through laser grooving before printing, contact of the Al-BSF with silicon chip substrate can be increased, certain light reflex can also be played simultaneously.Less equipment investment can be used by this method, and increase substantially the conversion efficiency of crystal silicon battery, and compared to the perforation battery of routine, electrical leakage and leakage rate are lower, and yield rate is higher.
Description
Technical field
The present invention relates to a kind of method for manufacturing solar battery, more particularly to a kind of passivating back back contacts crystal silicon too
The manufacture method of positive energy battery.
Background technology
With the technology fast development of photovoltaic solar cell in recent years, the photovoltaic leader plan especially in country
To lead down, the polycrystal silicon cell of traditional structure has been able to reach 18.8% efficiency, and monocrystalline is even more to have reached 20.4%, wherein
More prominent compared to routine is the back contacts electricity that the both positive and negative polarity of battery is all accomplished to the same face on the basis of traditional handicraft is improved
Pond, it compares conventional crystalline silicon battery, the characteristics of having 0.5% improved efficiency, but be limited by its own, compared to conventional batteries only
It is that electrode has been guided into the back side, its own is also as the battery of traditional structure, without the too big rising space, and due to it
The characteristics of itself perforation structure, electric leakage are especially not easily controlled, and in sheet resistance are up to 100 Ω/ (is art
A kind of measurement unit) more than and further lifting sheet resistance cannot also obtain improved efficiency by a larger margin in the case of, how
Lifting conversion efficiency, reduction electric leakage ratio just become more and more important so as to improve yield.
The content of the invention
In order to overcome the above-mentioned deficiencies of the prior art, and compatible traditional handicraft so that in the base of conventional through-hole battery process
Conversion efficiency is further increased substantially on plinth to be possibly realized, and larger change is not made to conventional through-hole battery process, the present invention
Provide a kind of compatible good and the inexpensive volume production of energy manufacture method.Include successively：Laser boring, making herbs into wool, diffusion, quarter
Erosion, plating backside passivation film, plating back protection film, plating front surface antireflection film, lbg, silk-screen printing, sintering step, compared to
Normal-stage punching battery, the step can realization that it needs to combine passivating back, plating back-protective layer, lbg is than conventional
To perforate the much higher improved efficiency of cell piece, increased equipment is also seldom, and due to the presence of the back side and perforated diaphragm,
Electric leakage is lower and more easy to control, suitable for the upgrading of normal-stage punching battery producing line.
In order to solve the above technical problems, one aspect of the present invention is：A kind of back contacts of passivating back are brilliant
The preparation method of silicon solar cell, comprises the following steps：
(1) punched using laser in silicon chip surface；
(2) making herbs into wool is carried out to the silicon chip after punching, removes surface damage layer, and prepare the suede for reducing front-side reflectivity
Face structure；
(3) the hole back side for PN junction, is nearby also prepared upper PN junction by diffusion under the high temperature conditions；
(4) etching edge is carried out to the PN junction after diffusion, phosphorosilicate glass is removed, goes acid and alkali-resistance film process, wherein, in trimming
One layer of acid and alkali-resistance diaphragm can also be printed before edge etching；
(5) cell backside prepare alumina passivation layer, prepare 1-4 layers diaphragm, front prepares antireflective coating；
(6) cutting processing is carried out to the back-protective layer away from perforated using laser；
(7) silk-screen printing prepares back electrode, aluminum back electric field, front electrode, and dries；
(8) sintered under high temperature, form good Ohmic contact
In a preferred embodiment of the present invention, back side acid polishing or alkali polishing can be also used during step 4.
In a preferred embodiment of the present invention, the passivation layer in step 5 can also be silica, thickness 5-20nm,
Protective layer is 1-4 layers, and thickness 50-200nm, its main material is simple or combination silicon nitride, silica, titanium dioxide
The material that titanium, non-crystalline silicon etc. can not be penetrated by silver paste, aluminium paste etc., the preparation order of protection film layer and antireflection film layer is regardless of elder generation
Afterwards.
In a preferred embodiment of the present invention, region carry out office of the step 6 using laser to remote more than hole center 2mm
Portion's slot treatment, the channel-shaped such as square, circular, bar shaped can be divided into.
In a preferred embodiment of the present invention, being printed with the case of acid and alkali-resistance diaphragm step 7 in step 4 can be with
Directly print and printed with the electrocondution slurry for penetrating passivation layer.
In a preferred embodiment of the present invention, in step 4 in the case of no printing acid and alkali-resistance diaphragm, in step
Printing is without the electrocondution slurry for penetrating passivation layer in 7.
The beneficial effects of the invention are as follows：The present invention provides a kind of preparation of the back contacts crystal silicon solar batteries of passivating back
Method, overcome the deficiencies in the prior art, and compatible traditional handicraft so that on the basis of conventional through-hole battery process further
Increase substantially conversion efficiency to be possibly realized, and larger change is not made to conventional through-hole battery process.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, make required in being described below to embodiment
Accompanying drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for
For those of ordinary skill in the art, on the premise of not paying creative work, it can also be obtained according to these accompanying drawings other
Accompanying drawing, wherein：
Fig. 1 is conventional back contact battery sectional view；
Fig. 2 is a kind of passivating back back contact battery structural section figure of the embodiment of the present invention 1
Fig. 3 is another passivating back back contact battery structural section figure of the embodiment of the present invention 2
The mark of each part is as follows in accompanying drawing：1st, the backplate at the positive back side is connected, 2, the secondary gate electrode in front,
3rd, silicon nitride anti-reflection layer, 4, the n-type silicon by diffusion transoid, 5, P-type silicon, 6, Al-BSF, 7, back electrode, 8 and 9 are
Backside passivation layer.
Embodiment
The technical scheme in the embodiment of the present invention will be clearly and completely described below, it is clear that described implementation
Example is only the part of the embodiment of the present invention, rather than whole embodiments.It is common based on the embodiment in the present invention, this area
All other embodiment that technical staff is obtained under the premise of creative work is not made, belong to the model that the present invention protects
Enclose.
The embodiment of the present invention 1 includes：
A kind of preparation method of the back contacts crystal silicon solar batteries of passivating back, comprises the following steps：
(1) punched using laser on p-type polysilicon piece surface, a diameter of 0.1~0.5mm in hole, shape is unlimited, can be with
For circular, square, triangle etc., the quantity and distribution form of hole are unlimited, can with it is equidistant, etc. quantity be multiplied (such as 5 × 5 or 6
× 6) form is punched, and can also be punched in the form of Unequal distance, unequal number amount are multiplied (such as 5 × 6 or 6 × 8).
(2) HF+HNO3=1 is used to the silicon chip after punching:4 chemical mixing solution carries out making herbs into wool, and corrosion weight is
0.15~0.45g, while surface damage layer is removed, and prepare the suede structure for reducing front-side reflectivity.
(3) using POCl3, hole center and the back side for PN junction, are nearby also prepared upper PN by diffusion at 800~840 DEG C
Knot, sheet resistance 40-150 Ω/, during diffusion can with the whole upper PN junction of diffusion of single slice two-sided, can also two panels put to enter together back-to-back
Row one side spreads PN junction.
(4) perforated overleaf covers one layer of diameter 1-5mm acid and alkali-resistance film.
(5) Chemical cleaning is used the PN junction after diffusion, removes edge PN junction, and removes the phosphorosilicate glass on surface, simultaneously
KOH or HF is used alone in the process and removes acid and alkali-resistance film.
(6) at the whole back side of battery, including 5-20nm alumina layer is prepared in hole, overleaf again and in hole finally
The silicon nitride protective layer of 50-200nm thickness is prepared, is finally further continued for the silicon nitride in front deposition a layer thickness 60-90nm.
(7) cutting is carried out to the protective layer of the back surface away from perforated using laser, is divided into some 10mm × 10mm
Equidistant square groove, depth 80-110nm.
(8) in the hole of the back side and one layer of silk-screen printing nearby is with the electrocondution slurry and the drying that penetrate effect, Ran Houyin
One layer of aluminum back electric field of brush is simultaneously dried (not including perforated), finally prints front electrode.
High temperature sintering in (9) 200~900 DEG C of sintering furnace, forms good Ohmic contact, then tests.
Under the conditions of AM1.5,25 DEG C, survey open-circuit voltage Voc, short circuit current Isc, fill factor, curve factor FF, conversion efficiency Eff,
Reverse leakage IRev2, correction data are as follows：
| Classification | Voc | Isc | FF | Eff | IRev2 | IRev2>1 ratio |
| Conventional scheme | 0.633 | 9.515 | 79.79 | 19.10% | 0.296 | 0.85% |
| The present invention | 0.641 | 9.604 | 79.98 | 19.61% | 0.284 | 0.81% |
In the present embodiment, compared to the polycrystalline back contact battery that traditional conversion efficiency is 19.1% or so, it changes effect
Rate can reach 19.6% or so, and conversion efficiency improves 0.5%, and this example is because the protection film layer of no hole layer is protected, leakage
Electric numerical value is more or less the same, and ratio of leaking electricity almost does not have difference.
In the present embodiment, 0.5% is improved compared to conventional back contact battery, its conversion efficiency.
The embodiment of the present invention 2 includes：
A kind of preparation method of the back contacts crystal silicon solar batteries of passivating back, comprises the following steps：
(1) punched using laser on p type single crystal silicon piece surface, a diameter of 0.1~0.5mm in hole.
(2) making herbs into wool is carried out to the silicon chip after punching.
(3) using POCl3, hole center and the back side for PN junction, are nearby also prepared upper PN by diffusion at 800~840 DEG C
Knot, sheet resistance 40-150 Ω/, two panels is put back-to-back carries out one side diffusion PN junction together.
(4) Chemical cleaning is used the PN junction after diffusion, removes edge PN junction, and remove the phosphorosilicate glass on surface.
(5) at the whole back side of battery, including 8nm alumina layer is prepared in hole, be then further continued in front deposition one
Thickness degree 75nm silicon nitride, the silicon nitride protective layer of 130nm thickness finally overleaf and in hole is prepared again.
(6) line processing is carried out to other regions away from perforated 2mm using laser.
(7) in the hole of the back side and one layer of silk-screen printing nearby is without the electrocondution slurry and drying for penetrating effect, then
One layer of aluminum back electric field of printing is simultaneously dried, and not including perforated, finally prints front electrode.
High temperature sintering in (8) 200~900 DEG C of sintering furnace, forms good Ohmic contact, then tests.
Under the conditions of AM1.5,25 DEG C, survey open-circuit voltage Voc, short circuit current Isc, fill factor, curve factor FF, conversion efficiency Eff,
Reverse leakage IRev2, correction data are as follows：
| Classification | Voc | Isc | FF | Eff | IRev2 | IRev2>1 ratio |
| Conventional scheme | 0.638 | 9.682 | 79.71 | 20.33% | 0.197 | 0.8% |
| The present invention | 0.653 | 9.917 | 79.92 | 21.37% | 0.101 | 0.3% |
In the present embodiment, it is 20.3% compared to conversion efficiency, the traditional monocrystalline back contacts for ratio 0.8% or so of leaking electricity
Battery, its conversion efficiency can reach 21.37%, and leakage rate 0.3%, conversion efficiency improves 1% or so, and ratio of leaking electricity reduces
0.5%.
Above-described embodiment is technical characterstic and design to illustrate the invention, and the main object of the present invention is to allow understand this
The people of technology can understand the content of the invention and can be implemented according to above example, be not intended as the protection model of the limitation present invention
Enclose.Any equivalent change or modification that every Spirit Essence according to the present invention is made, belong to protection scope of the present invention.
Claims (6)
1. the preparation method of the back contacts crystal silicon solar batteries of a kind of passivating back, it is characterised in that comprise the following steps：
（1）Punched using laser in silicon chip surface；
（2）Making herbs into wool is carried out to the silicon chip after punching, removes surface damage layer, and prepares the matte knot for reducing front-side reflectivity
Structure；
（3）The hole back side is nearby also prepared upper PN junction by diffusion for the PN junction that one layer of sheet resistance is 40-150 under the high temperature conditions；
（4）Etching edge is carried out to the PN junction after diffusion, goes phosphorosilicate glass to handle, wherein, can also first it be printed before PN junction is removed
Brush one layer of acid and alkali-resistance mask；
（5）Cell backside prepare 5-20nm alumina passivation layer, the protection film layer for preparing 1-4 layer total thicknesses 50-200nm again,
Front prepares 60-90nm silicon nitride antireflection layer；
（6）Cutting is carried out to protection film layer using laser；
（7）Silk-screen printing prepares back electrode, aluminum back electric field, front electrode, and dries；
（8）Sintered under high temperature, form good Ohmic contact.
2. the preparation method of the back contacts crystal silicon solar batteries of passivating back according to claim 1, its principal character
It is：The hole that some diameters are less than 2mm is distributed with positive and negative electrode in the same face, silicon chip, and positive conductive electrode is in
Between hole extend through the back side.
3. the preparation method of the back contacts crystal silicon solar batteries of passivating back according to claim 1, its principal character
It is：Back side acid polishing or alkali polishing can be also used during the step 4 of the claim 1.
4. the preparation method of the back contacts crystal silicon solar batteries of passivating back according to claim 1, its principal character
It is：Passivation layer in the step 5 of the claim 1 can also be silica, thickness 5-20nm, the back-protective film layer
For 1-4 layers, gross thickness 50-200nm, its main material is simple or combination silicon nitride, silica, titanium dioxide,
The material that non-crystalline silicon etc. can not be penetrated by conductive silver slurry and aluminum conductive electric slurry, the preparation order of protection film layer and antireflection layer is not
Successively.
5. the preparation method of the back contacts crystal silicon solar batteries of passivating back according to claim 1, its principal character
It is：Or afterwards can be using laser etc. to the area away from more than hole center 2mm during the step 5 of the claim 1
Domain carries out differential trench open processing, can be divided into 1-20mm square, diameter 1-20mm circle, 0.1 ~ 10mm of width bar line etc.
Shape.
6. the preparation method of the back contacts crystal silicon solar batteries of passivating back according to claim 1, its principal character
It is：In the case of not having any acid and alkali-resistance film protection in the step 4 of the claim 1, printing in step 7 does not have and worn
The electrocondution slurry of saturating protective layer.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109713053A (en) * | 2018-12-27 | 2019-05-03 | 江苏日托光伏科技股份有限公司 | A kind of preparation method of MWT solar battery |
| CN109888062A (en) * | 2019-03-29 | 2019-06-14 | 江苏日托光伏科技股份有限公司 | A kind of MWT solar battery laser SE+ alkali polishing diffusion technique |
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