CN109713053A - A kind of preparation method of MWT solar battery - Google Patents
A kind of preparation method of MWT solar battery Download PDFInfo
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- CN109713053A CN109713053A CN201811616388.2A CN201811616388A CN109713053A CN 109713053 A CN109713053 A CN 109713053A CN 201811616388 A CN201811616388 A CN 201811616388A CN 109713053 A CN109713053 A CN 109713053A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The present invention relates to a kind of preparation method of battery, especially a kind of preparation method of MWT solar battery belongs to MWT solar cell module processing technique field.The preparation method of MWT solar battery of the present invention, including by silicon wafer through punching, etching is using oxidizing annealing after making herbs into wool and diffusing step, back passivation, front plated film, laser slotting, the step of silk-screen printing and sintering form Ohmic contact finally obtains MWT solar battery；The phosphorosilicate glass of etch step removal silicon chip back side and four flank side surfaces, then plus reaction solution carry out alkali polishing, obtain the back surface that reflectivity is 40-50%.The silicon chip back side polishing effect of slot type alkali polishing process is more superior than harsh etching technique in the present invention, lower loss of weight, reduces fragment risk；Higher backside reflection rate improves the internal reflection effect of long-wave band, is conducive to passivating film Al2O3Uniform deposition, improve to the passivation effect of silicon wafer, compared with prior art, battery efficiency gain at least 0.15%.
Description
Technical field
The present invention relates to a kind of preparation method of battery, especially a kind of preparation method of MWT solar battery belongs to
MWT solar cell module processing technique field.
Background technique
Metal piercing winds silicon solar cell (MWT) because its is high-efficient, and shading-area is small and better appearance characteristics
And it is easy to existing conventional crystalline silicon process integration and receives more and more attention.MWT silicon solar cell is to pass through laser drill
The energy that front is collected passes through battery transfer to cell backside, reaches the mesh for improving transfer efficiency to reduce shading-area
's.Such as CN201410016190.6 provides the low cost preparation method of MWT a kind of, in the production process of conventional crystalline silicon battery
Upper increase two procedures, it may be assumed that laser boring and exposure mask after diffusion print before making herbs into wool.In current existing silicon substrate high-efficiency battery skill
In art, passivation emitter and back surface battery (PERC battery) are by increasing back side Al2O3The passivation of layer, will promote battery efficiency
Technique move to cell backside, therefore the manufacturing process of itself and other high-efficiency battery technologies and new raising battery efficiency have it is non-
Often good compatibility.PERC battery can be incorporated into simultaneously in the manufacturing of silicon solar cell with other high efficiency technicals.Such as
CN201711469159.8 provides the preparation method that MWT battery is superimposed with PERC technique, realizes the promotion of battery efficiency.But
PERC battery plates Al2O3Passivation technology is very high to cell backside purity requirements, therefore etch cleaner technique is most important, and MWT
Masking process needs in cell manufacturing process wash in etching procedure, and conventional mask uses paraffin, actual production process
Middle alkali and diethylene glycol monobutyl ether are unsatisfactory for PERC technique to its cleaning effect, lead to MWT and efficient PERC technique
The battery efficiency that is not optimal of superposition as a result, this is a urgent problem needed to be solved.
Summary of the invention
The present invention promotes insufficient problem for battery efficiency existing in the prior art, proposes a kind of MWT solar-electricity
The preparation method in pond improves the efficiency of MWT solar battery.
The present invention solves technical problem by the following technical programs: including by silicon wafer through punching, after making herbs into wool and diffusing step
The step of etching is passivated using oxidizing annealing, back, front plated film, laser slotting, silk-screen printing and sintering form Ohmic contact
Finally obtain MWT solar battery；The phosphorosilicate glass of the etch step removal silicon chip back side and four flank side surfaces, then plus reaction solution
Alkali polishing is carried out, the back surface that reflectivity is 40-50% is obtained.
In the etch step of the above method, the reaction solution is that one of KOH, NaOH, organic base and polishing agent combine,
The reaction temperature of alkali polishing is at 50-70 DEG C, reaction time 100-500s.The HF solution for being 2-5% with volume ratio removes dephosphorization silicon
Glass.
Specific step is as follows:
The first step, punching carry out laser boring according to N × N hole dot pattern on silicon wafer；
Second step, making herbs into wool carry out cleaning and texturing using conventional chemical cleaning and texturing method, remove silicon chip surface
Damaging layer, reduce the recombination rate of photo-generated carrier；The uniform flannelette of raising light absorption is formed in silicon chip surface simultaneously；
Silicon wafer after making herbs into wool is placed back to back and carries out single side phosphorus diffusion by third step, diffusion；
4th step, etching, under moisture film protection, the phosphorosilicate glass of silicon chip back side and four flank side surfaces after removal diffusion, then
Alkali polishing is carried out to silicon wafer, obtains the back surface that reflectivity is 40-50%；
Silicon wafer after etching is placed back to back in quartz boat by the 5th step, oxidizing annealing, carries out oxidizing annealing；
6th step, passivating back make silicon nitride passivation anti-reflection prior to silicon chip back side deposit passivation layer on passivation layer
Penetrate film；
7th step, front plated film plate antireflective coating in front side of silicon wafer；
8th step, laser slotting carry out laser slotting in silicon chip back side；
9th step, silk-screen printing carry out positive electrode point, plug-hole electrocondution slurry cathode point, Al-BSF and just in silicon chip back side
The printing of face pair grid line；
Tenth step, sintering, sintering curing silicon wafer front and back slurry form good Ohmic contact.
Further, in the first step, punching forms the circular hole that diameter is 0.1-0.3mm.
In the third step, diffusion temperature be 800-850 DEG C, diffusion time 50-90min, sheet resistance be 70-100 Ω/
□。
In 5th step, oxidizing annealing temperature is 650-800 DEG C.
In 6th step, PECVD or ALD deposition Al is used2O3Passivation layer, Al2O3Passivation layer with a thickness of 3-30nm；
The silicon nitride passivation antireflective coating with a thickness of 80-150nm.
In 7th step, the film thickness of antireflective coating is 60-90nm, refractive index 2.0-2.3.
In 8th step, groove width is 40-100 μm, spacing 1.0-5.0mm.
Etching procedure of the invention removes phosphorosilicate glass (PSG) and slot type alkali polishing process using chain type, can directly reduce and cover
Film printing process, because going PSG lower using HF concentration and having moisture film protection, the phosphorosilicate glass layer preservation in hole is complete,
When alkali polishes, P-N in cavity can be protected under the collective effect of phosphorosilicate glass layer and polishing agent, not will cause battery drain situation.
After saving process masks, without the influence silicon wafer more easy cleaning of the organic matters such as paraffin, silicon wafer cleanliness is also greatly improved, slot type machine
Platform has evaded the contact of burnishing surface with idler wheel, belt, reduces the pollution to silicon wafer.
Chain type goes psg and slot type alkali polishing process to replace harsh etching technique in the present invention, prevents nitrogen discharged, does not use completely
Nitric acid, diethylene glycol monobutyl ether and HF dosage are reduced, and reduce cost for wastewater treatment, solve environmental issue.
The silicon chip back side polishing effect of slot type alkali polishing process is more superior than harsh etching technique in the present invention, lower to subtract
Weight reduces fragment risk；Higher backside reflection rate improves the internal reflection effect of long-wave band, is conducive to passivating film Al2O3's
Uniform deposition improves the passivation effect to silicon wafer, compared with prior art, battery efficiency gain at least 0.15%.
Detailed description of the invention
Fig. 1 is process flow chart of the invention.
Fig. 2 is MWT+PERC battery structure figure.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated.
Embodiment
The present embodiment prepares MWT solar battery according to the process in Fig. 1, comprises the concrete steps that:
1, silicon wafer: using solar level p type single crystal silicon piece as substrate.
2, it laser boring: according to 6 × 6 hole dot patterns, is punched on silicon wafer using laser, forming diameter is
The circular hole of 0.15mm.
3, silicon wafer after punching making herbs into wool: is formed into uniform pyramid flannelette, reflectivity 11.2% using alkali making herbs into wool.
4, it spreads: silicon wafer after making herbs into wool being placed back to back and carries out single side phosphorus diffusion, diffusion temperature is 850 DEG C, diffusion time
For 90min, sheet resistance is 90 Ω/.
5, etch: 1) spread after silicon wafer using chain type board moisture film protection under, with volume ratio be 2-5% HF solution and
It is the by-product of phosphorus diffusion that idler wheel, which removes silicon chip back side and four flank side surface phosphorosilicate glasses (PSG), phosphorosilicate glass with the mode of liquid, can
It is removed with HF solution.2) groove type machine is used to carry out alkali polishing to silicon wafer after removing PSG, reaction solution is that (KOH or NaOH have alkali
Machine alkali) and polishing agent in 50-70 DEG C of reaction 100-500s, obtain the back surface that reflectivity is 40-50%.
6, oxidizing annealing: silicon wafer after etching is placed back to back and is aoxidized for 650-800 DEG C in the lehr in quartz boat
Annealing.
7, back passivation: PECVD or ALD deposition Al is used2O3Passivation layer, with a thickness of 3-30nm；In Al2O3Layer uses above
The silicon nitride passivation antireflective coating of PECVD production 80-150nm thickness.
8, front plated film: front side of silicon wafer plates SiNx antireflective coating, film thickness 60-90nm, refractive index 2.0- using PECVD
2.3。
9, laser slotting: silicon chip back side progress laser slotting, 40-100 μm of groove width, spacing 1.0-5.0mm.
10, silk-screen printing: 1) printing of back positive electrode point 2) 3) print 4) printing of plug-hole electrocondution slurry cathode point by Al-BSF
Positive pair grid line printing
11, it is sintered: positive back pastes being solidified by sintering furnace high temperature sintering, form good Ohmic contact.
12, testing, sorting.
MWT+PERC battery structure is positive silver electrode point as shown in Fig. 2, 1 is positive silver grating line, 2, and 3 be the anti-reflection of front silicon nitride
Film, 4 be N-type emitter, and 5 be p-type Si matrix, and 6 be the part area BSF, and 7 be Al2O3 passivating film, and 8 be back side silicon nitride, and 9 are
Al-BSF, 10 be positive electrode point, and 11 be plug-hole negative electrode point.
The present embodiment removes PSG and slot type alkali polishing process using chain type in etching procedure, and exposure mask protection is not needed after diffusion,
It can solve following problems:
1, printing mask is needed to protect the P-N junction in laser boring hole after spreading in MWT+PERC technique, is being etched
Silicon chip back side and the polishing of side acid etch are first carried out in process, then wash exposure mask through alkali slot, but the clean window of exposure mask is opposite
Relatively narrow, cleannes require higher for monocrystalline PERC, and cleaning difficulty is bigger, and then influence passivation effect and carried out using acid
Etching polishing flatness is poor, also has a certain impact to the deposition of passivating film.
2, harsh etching technique is using strong acid such as nitric acid, the hydrofluoric acid of high concentration, and sour consumption is big, the place of nitrogen-containing oxide waste water
Reason cost is very high, and environmental protection pressure is larger.
3, diethylene glycol monobutyl ether is used in exposure mask cleaning process, consumption and waste water handling problem also increase production cost
With environmentally friendly cost.
Comparative example
This comparative example prepares MWT solar battery using existing method, comprises the concrete steps that:
1, silicon wafer: using solar level p type single crystal silicon piece as substrate.
2, laser boring: according to 6 × 6 hole dot patterns, being punched on silicon wafer using laser, forms diameter 0.15mm
Circular hole.
3 making herbs into wool: uniform pyramid flannelette, reflectivity 11.2% are formed using alkali making herbs into wool.
4, it spreads: being placed back to back and carry out single side phosphorus diffusion, diffusion temperature is 830 DEG C, diffusion time 90min, sheet resistance
For 90 Ω/.
5, exposure mask: the printing mask at non-diffusing face hole plays the effect of plug-hole.Exposure mask slurry used be paraffin or
Antiacid high molecular material, film thickness are 10 μm.
6, it etches: carrying out acid etch using the nitric acid of volume ratio 50% and 18% hydrofluoric acid mixed solution, loss of weight 0.35g, instead
Penetrate rate 32-35%；And use the exposure mask slurry in alkali and the diethylene glycol monobutyl ether removal back side and hole.
7, oxidizing annealing: silicon wafer after etching is placed back to back in quartz boat 650 DEG C of progress oxidizing annealings in the lehr.
8, back passivation: PECVD or ALD deposition Al is used2O3Passivation layer, with a thickness of 3-30nm；In Al2O3Layer uses above
The silicon nitride passivation antireflective coating of PECVD production 80-150nm thickness.
9, front plated film: front side of silicon wafer plates SiNx antireflective coating, film thickness 60-90nm, refractive index 2.0- using PECVD
2.3。
10, laser slotting: silicon chip back side progress laser slotting, 40-100 μm of groove width, spacing 1.0-5.0mm.
11, silk-screen printing: 1) printing of back positive electrode point 2) 3) print 4) printing of plug-hole electrocondution slurry cathode point by Al-BSF
Positive pair grid line printing.
12, it is sintered: positive back pastes being solidified by sintering furnace high temperature sintering, form good Ohmic contact.
13, testing, sorting.
Photoelectric properties and yield statistics are carried out to above-described embodiment and comparative example, test result: the method for the present invention preparation
The final electrical property of battery improves 0.15%, Yield lmproved 5%.It can be seen that MWT solar energy can be improved in preparation method of the invention
The efficiency of battery.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
It for member, without departing from the principle of the present invention, can also make several improvements, these improvement also should be regarded as of the invention
Protection scope.
Claims (10)
1. a kind of preparation method of MWT solar battery, it is characterised in that: including by silicon wafer through punching, making herbs into wool and diffusing step
After etch using oxidizing annealing, back passivation, front plated film, laser slotting, silk-screen printing and sintering form the step of Ohmic contact
Suddenly MWT solar battery is finally obtained；The phosphorosilicate glass of the etch step removal silicon chip back side and four flank side surfaces, then plus reaction
Liquid carries out alkali polishing, obtains the back surface that reflectivity is 40-50%.
2. the preparation method of MWT solar battery according to claim 1, it is characterised in that: reacted described in etch step
Liquid is that one of KOH, NaOH, organic base and polishing agent combine, and the reaction temperature that alkali polishes is in 50-70 DEG C, reaction time
100-500s。
3. the preparation method of MWT solar battery according to claim 1, it is characterised in that: use volume ratio in etch step
Phosphorosilicate glass is removed for the HF solution of 2-5%.
4. the preparation method of MWT solar battery according to claim 1, it is characterised in that: the following steps are included:
The first step, punching carry out laser boring according to N × N hole dot pattern on cell piece；
Second step, making herbs into wool carry out cleaning and texturing using conventional chemical cleaning and texturing method, remove the damage of silicon chip surface
Hurt layer, reduces the recombination rate of photo-generated carrier；The uniform flannelette of raising light absorption is formed in silicon chip surface simultaneously；
Silicon wafer after making herbs into wool is placed back to back and carries out single side phosphorus diffusion by third step, diffusion；
4th step, etching, under moisture film protection, the phosphorosilicate glass of silicon chip back side and four flank side surfaces after removal diffusion, then to silicon
Piece carries out alkali polishing, obtains the back surface that reflectivity is 40-50%；
Silicon wafer after etching is placed back to back in quartz boat by the 5th step, oxidizing annealing, carries out oxidizing annealing；
6th step, back passivation make silicon nitride passivation antireflective coating prior to silicon chip back side deposit passivation layer on passivation layer；
7th step, front plated film plate antireflective coating in front side of silicon wafer；
8th step, laser slotting carry out laser slotting in silicon chip back side；
9th step, silk-screen printing carry out positive electrode point, plug-hole electrocondution slurry cathode point, Al-BSF and front grid in silicon chip back side
Line printing；
Tenth step, sintering, sintering curing silicon wafer front and back slurry form good Ohmic contact.
5. the preparation method of MWT solar battery according to claim 4, it is characterised in that: in the first step, punch shape
The circular hole for being 0.1-0.3mm at diameter.
6. the preparation method of MWT solar battery according to claim 4, it is characterised in that: in the third step, diffusion temperature
Degree is 800-850 DEG C, diffusion time 50-90min, and sheet resistance is 70-100 Ω/.
7. the preparation method of MWT solar battery according to claim 4, it is characterised in that: in the 5th step, oxidation is moved back
Fiery temperature is 650-800 DEG C.
8. the preparation method of MWT solar battery according to claim 4, it is characterised in that: in the 6th step, use
PECVD or ALD deposition Al2O3Passivation layer, Al2O3Passivation layer with a thickness of 3-30nm；The thickness of the silicon nitride passivation antireflective coating
Degree is 80-150nm.
9. the preparation method of MWT solar battery according to claim 4, it is characterised in that: in the 7th step, antireflective
The film thickness of film is 60-90nm, refractive index 2.0-2.3.
10. the preparation method of MWT solar battery according to claim 4, it is characterised in that: in the 8th step, fluting
Width is 40-100 μm, spacing 1.0-5.0mm.
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110416364A (en) * | 2019-08-07 | 2019-11-05 | 山西潞安太阳能科技有限责任公司 | The back side monocrystalline PERC alkaline etching technique |
| CN110828607A (en) * | 2019-08-27 | 2020-02-21 | 横店集团东磁股份有限公司 | Preparation method of high-conversion-efficiency SE-PERC solar cell |
| CN111245366A (en) * | 2020-01-09 | 2020-06-05 | 徐州谷阳新能源科技有限公司 | PSG adjusting and testing method for improving steady state of MWT solar cell |
| CN111276568A (en) * | 2020-02-14 | 2020-06-12 | 泰州中来光电科技有限公司 | Passivated contact solar cell and preparation method thereof |
| CN111799339A (en) * | 2020-06-29 | 2020-10-20 | 韩华新能源（启东）有限公司 | Surface treatment method of silicon wafer suitable for solar cell |
| CN112599632A (en) * | 2020-11-25 | 2021-04-02 | 无锡日托光伏科技有限公司 | MWT battery preparation method and MWT battery |
| CN113113324A (en) * | 2021-04-07 | 2021-07-13 | 捷捷半导体有限公司 | Passivation layer manufacturing method |
| CN113314626A (en) * | 2021-05-26 | 2021-08-27 | 江苏润阳世纪光伏科技有限公司 | Manufacturing method of solar cell |
| CN114628547A (en) * | 2022-03-10 | 2022-06-14 | 泰州中来光电科技有限公司 | Solar cell with local surface morphology and preparation method thereof |
| CN114664972A (en) * | 2020-12-23 | 2022-06-24 | 比亚迪股份有限公司 | Silicon wafer polishing method, solar cell preparation method and solar cell |
| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
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| CN111799339A (en) * | 2020-06-29 | 2020-10-20 | 韩华新能源（启东）有限公司 | Surface treatment method of silicon wafer suitable for solar cell |
| CN112599632A (en) * | 2020-11-25 | 2021-04-02 | 无锡日托光伏科技有限公司 | MWT battery preparation method and MWT battery |
| CN114664972A (en) * | 2020-12-23 | 2022-06-24 | 比亚迪股份有限公司 | Silicon wafer polishing method, solar cell preparation method and solar cell |
| CN114664972B (en) * | 2020-12-23 | 2024-04-16 | 比亚迪股份有限公司 | Polishing method of silicon wafer, preparation method of solar cell and solar cell |
| CN113113324A (en) * | 2021-04-07 | 2021-07-13 | 捷捷半导体有限公司 | Passivation layer manufacturing method |
| CN113113324B (en) * | 2021-04-07 | 2024-02-06 | 捷捷半导体有限公司 | Passivation layer manufacturing method |
| CN113314626A (en) * | 2021-05-26 | 2021-08-27 | 江苏润阳世纪光伏科技有限公司 | Manufacturing method of solar cell |
| CN114628547A (en) * | 2022-03-10 | 2022-06-14 | 泰州中来光电科技有限公司 | Solar cell with local surface morphology and preparation method thereof |
| CN114628547B (en) * | 2022-03-10 | 2023-07-21 | 泰州中来光电科技有限公司 | Solar cell with back surface local morphology and preparation method thereof |
| CN115890021A (en) * | 2023-01-05 | 2023-04-04 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
| CN115890021B (en) * | 2023-01-05 | 2023-05-16 | 成都功成半导体有限公司 | Wafer laser cutting method and wafer |
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