CN106784161A - A kind of polishing lithographic method of PERC solar cells - Google Patents

A kind of polishing lithographic method of PERC solar cells Download PDF

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Publication number
CN106784161A
CN106784161A CN201710033048.6A CN201710033048A CN106784161A CN 106784161 A CN106784161 A CN 106784161A CN 201710033048 A CN201710033048 A CN 201710033048A CN 106784161 A CN106784161 A CN 106784161A
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silicon chip
lithographic method
solution
immersed
grooves
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左国军
任金枝
朱信俊
李磊
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Changzhou Jiejiachuang Precision Machinery Co Ltd
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Changzhou Jiejiachuang Precision Machinery Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a kind of polishing lithographic method of PERC solar cells, including：Step 1, chain type remove silicon chip back side and edge PSG；Step 2, slot type polished backside etching；Step 3, slot type RCA cleanings；Step 4, slot type remove PSG.The present invention can effectively solve the problem that the bad problems of silicon chip EL, substantially reduce the finished product fraction defective of battery.

Description

A kind of polishing lithographic method of PERC solar cells
Technical field
The present invention relates to photovoltaic cell technical field, more particularly to a kind of polishing lithographic method of PERC solar cells.
Background technology
The production procedure of conventional PERC solar energy highly effectives battery is generally comprised：Making herbs into wool, diffusion, etching remove PSG, atomic layer deposition Product back side alumina-plated film, PECVD, laser beam drilling, silk-screen printing and sintering, annealing, testing, sorting.Wherein etching is to utilize HNO3Mixed solution with HF corrodes to silicon chip lower surface and edge after diffusion, removes the N-type silicon at edge so that silicon chip Upper and lower surface mutually insulated.It is the phosphorosilicate glass that silicon chip surface is removed using HF to remove PSG, it is to avoid being combined for launch site electronics, is led The reduction of minority carrier life time is caused, and then reduces cell piece efficiency.
In the prior art PERC batteries typically using chain equipment polish etching, will silicon chip be placed on roller forward Transport, roller lower section is provided with reactive tank, and this polishing etching mode has following defect：
1st, roller contact, after especially changing liquid and maintenance, the dirty of roller surface is difficult to clean up, and cannot visually judge, multiple Largely vacation pieces cleaning rollers are run after machine, then while running common batteries piece, while verifying PERC cell pieces EL to roller-less print And other are bad, it is ensured that the bad ratios of EL take more than 12H in tolerance interval；
2nd, belt contacts, it is impossible to have any relative motion with the cell piece back side, process window is too small；
3rd, lamination band liquid is difficult finds, lamination band liquid rear roller and belt pollute difficult cleaning；
4th, cell piece finished product needs full inspection, brings the waste of human and material resources cost.
Finished battery yield is relatively low during current PERC battery volume productions, and predominantly EL is bad, and blackspot, skin occurs in battery Band print, rolling wheel stamp, dirty etc. it is related to etching procedure.Common photovoltaic battery product is bad within 1%, but PERC batteries Bad ratio has reached 5% ~ 20%, sometimes even more high, especially when etching changes liquid, PM or more long downtime, after answering a pager's call The bad outbursts of EL, bad ratio more than 40%.Because the PERC batteries bad ratios of EL are too high, cell piece EL is caused to need full inspection, 1 Platform silk screen need to be equipped with 2 EL test machines.
PERC cell pieces finished product yield and etching technics are closely bound up, and before alundum (Al2O3) back of the body plated film, silicon chip back surface is not Can there are any contamination and friction, etching workshop section has become the bottleneck operation of restriction PERC production capacities and product yield.
The content of the invention
In order to solve the above technical problems, the present invention proposes a kind of polishing lithographic method of PERC solar cells, the polishing Lithographic method can solve the problem that the bad problems of silicon chip EL, it is ensured that silicon chip carry out alundum (Al2O3) the back of the body plated film before without it is any pollution and Friction, substantially reduces the finished product fraction defective of battery.
The technical solution adopted by the present invention is to design a kind of polishing lithographic method of PERC solar cells, including：
Step 1, the silicon chip for having carried out making herbs into wool DIFFUSION TREATMENT is forwarded using roller, using upper table from sprinkling equipment to silicon chip Drip to form moisture film in face；
Step 2, roller continue for silicon chip to be forwarded to a HF grooves, and the bottom of roller is immersed in the HF solution in a HF grooves In, bottom of the roller with silicon chip in liquid rotation process contacts with the HF solution on roller, removes the silicon chip back side and edge PSG；
Step 3, the upper and lower surface with deionized water rinsing silicon chip, drying and processing is carried out to silicon chip；
Step 4, silicon chip is put into etching groove using silicon chip flower basket, silicon chip is immersed in the alkali lye in etching groove and is carved Erosion；
Step 5, silicon chip is put into the first tank, silicon chip is immersed in the deionized water in the first tank and cleans；
Step 6, silicon chip is put into rinse bath, silicon chip is immersed in carries out RCA cleanings in the cleaning fluid in rinse bath；
Step 7, silicon chip is put into the second tank, silicon chip is immersed in the deionized water in the second tank and cleans；
Step 8, silicon chip is put into the 2nd HF grooves, silicon chip is immersed in the HF solution in the 2nd HF grooves carries out pickling removal silicon chip The PSG of upper surface；
Step 9, silicon chip is put into the 3rd tank, silicon chip is immersed in the deionized water in the 3rd tank and cleans；
Step 10, silicon chip is put into drying tank and dries.
The water of silicon chip top surface is in 5mg ~ 8mg in step 1.
The liquid level of HF solution is at 1/3 ~ 2/3 position of roller diameter in step 2.
HF liquid quality fractions in first HF grooves are room temperature in the temperature of 2% ~ 8%, HF solution.
Alkali lye in etching groove is KOH and the mixed liquor of additive, and KOH concentration is 2.5% ~ 5%, and additive concentration is 0.5% ~ 2%, the temperature of alkali lye is 60 DEG C ~ 80 DEG C, and the reaction time is 1min ~ 3min.
Alkali lye in etching groove is TMAH solution, and TMAH concentration is 2.5% ~ 10%, and the temperature of alkali lye is 60 DEG C ~ 90 DEG C, instead It is 1min ~ 10min between seasonable.
Cleaning fluid in rinse bath is 1 by volume ratio:10 NH3·H2O and H2O2Mixed solution, volume ratio are 1:4 HF And H2O2Mixed solution, volume ratio are 1:3 HCL and H2O2One or more in mixed solution combination is formed, and the reaction time is 1min~3min。
HF liquid quality fractions in 2nd HF grooves are 2% ~ 8%.
Solution in etching groove, rinse bath and the 2nd HF grooves is by bubbling uniform treatment.
Compared with prior art, the present invention has advantages below：
1st, silicon chip is transported by silicon chip flower basket and is immersed in reactive tank and performs etching and clean, and slot type etching and silicon chip back side are without connecing Touch, can solve the problem that the EL that PERC cell pieces rolling wheel stamp, belt print etc. are caused is bad；
2nd, silicon chip polishes etching using alkali lye, and effect is better than acid solution of the prior art polishing etching, and alkali polishing etching energy is electricity Pond piece back side matte pinnacle of a pagoda is scabbled, and the back side is relatively flat, and preferably, back reflection rate is high for passivation effect, and back surface field contact improves obvious, electricity Pond piece efficiency gets a promotion；
3rd, silicon chip carries out RCA cleanings, can strengthen to silicon wafer surface cleaning, improves silicon chip surface cleanliness factor, reduce blackspot, dirty Etc. bad, cell piece efficiency is further lifted；
4th, alkali polishing etching eliminates substantial amounts of nitric acid and hydrofluoric acid, reduces nitrogenous, fluorine-containing chemical discharge, and then reduce useless Liquid processing cost, environmental protection.
Brief description of the drawings
With reference to embodiment and accompanying drawing, the present invention is described in detail, wherein：
Fig. 1 is process flow diagram of the invention.
Specific embodiment
As shown in figure 1, polishing lithographic method proposed by the present invention, including：
Step 1, silicon chip need to first pass through conventional making herbs into wool DIFFUSION TREATMENT, i.e. silicon chip through over cleaning and surface wool manufacturing, then in silicon chip table Face DIFFUSION TREATMENT forms PN junction.
Silicon chip is forwarded using roller, drips to form moisture film to the upper surface of silicon chip using sprinkling equipment, using water Film protects the upper surface of silicon chip, the i.e. diffusingsurface of silicon chip, and wherein moisture film can uniformly be laid in the upper surface of silicon chip, it is ensured that silicon Upper surface is coated with moisture film all the time during piece runs forward in a HF grooves, and water is about 5mg ~ 8mg.
Step 2, roller continue for silicon chip to be forwarded to a HF grooves, and the HF that the bottom of roller is immersed in a HF grooves is molten In liquid, 2% ~ 8%, temperature is room temperature to the HF liquid quality fractions in a HF grooves, and its liquid level is about the 1/3 of roller diameter At ~ 2/3 position, the lower surface of silicon chip can directly contact roller walked by roller band liquid, the lower surface of silicon chip in walking process Chemically reacted with HF liquids, realize removal the back side and edge PSG effect, and silicon chip upper surface under the protection of moisture film not Contacted with HF solution, do not chemically reacted.
Step 3, roller continue forward to transport silicon chip, after the upper and lower surface with deionized water rinsing silicon chip, silicon chip are entered Row drying and processing.
Step 4, silicon chip is put into silicon chip flower basket, silicon chip is put into etching groove silicon chip flower basket by manipulator, Silicon chip is immersed in the alkali lye in etching groove, using the special property of alkali lye, silicon chip lower surface and edge is performed etching so that Silicon chip upper and lower surface insulate and polished backside.Alkali lye in etching groove has the two schemes can to select, and the first string is to carve Alkali lye in erosion groove is KOH and the mixed liquor of additive, and KOH concentration is 2.5% ~ 5%, and additive concentration is 0.5% ~ 2%, alkali lye Temperature is 60 DEG C ~ 80 DEG C, and the reaction time is 1min ~ 3min.Second scheme is that the alkali lye in etching groove is TMAH solution, TMAH Concentration is 2.5% ~ 10%, and the temperature of alkali lye is 60 DEG C ~ 90 DEG C, and the reaction time is 1min ~ 10min.
Step 5, manipulator lift silicon chip flower basket and are put into the first tank, and silicon chip is immersed in the deionized water in the first tank Middle cleaning 1min ~ 3min.
Step 6, manipulator lift silicon chip flower basket and are put into rinse bath, and silicon chip is immersed in the cleaning fluid in rinse bath and carries out RCA is cleaned, and RCA cleanings are the cleanliness factors for further improving silicon chip surface, is reduced silicon chip surface and is combined and blackspot, the product of dirty It is raw.Cleaning fluid in rinse bath can be 1 using volume ratio:10 NH3·H2O and H2O2Mixed solution, volume ratio are 1:4 HF And H2O2Mixed solution, volume ratio are 1:3 HCL and H2O2It is combined for one or more in mixed solution, after polishing Silicon chip surface high intensity is cleaned, and the reaction time is 1min ~ 3min.
Step 7, manipulator lift silicon chip flower basket and are put into the second tank, and silicon chip is immersed in the deionized water in the second tank Middle cleaning 1min ~ 3min.
Step 8, manipulator lift silicon chip flower basket and are put into the 2nd HF grooves, and silicon chip is immersed in the HF solution in the 2nd HF grooves The PSG of pickling removal silicon chip upper surface is carried out, the HF liquid quality fractions in the 2nd HF grooves are 2% ~ 8%.
Step 9, manipulator lift silicon chip flower basket and are put into the 3rd tank, and silicon chip is immersed in the deionized water in the 3rd tank Middle cleaning 1min ~ 3min.
Step 10, finally silicon chip is put into drying tank dries.
Wherein, etching groove, rinse bath and the 2nd HF grooves are cuboid type groove, and silicon chip flower basket is also cuboid-type, etching Solution in groove, rinse bath and the 2nd HF grooves by bubbling uniform treatment, to ensure reaction mass.
The production that following technique completes PERC cell pieces is can proceed with after the completion of etching glossing.
Step 11, conventional ald back side alumina-plated film is carried out to silicon chip.
Step 12, silicon chip is carried out conventional PECVD plated films, lbg, the positive back metal slurry of silk-screen printing, burn Knot, annealing, are finally obtained PERC cell pieces.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in essence of the invention Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.

Claims (9)

1. a kind of polishing lithographic method of PERC solar cells, including：
Step 1, the silicon chip for having carried out making herbs into wool DIFFUSION TREATMENT is forwarded using roller, using upper table from sprinkling equipment to silicon chip Drip to form moisture film in face；
Step 2, roller continue for silicon chip to be forwarded to a HF grooves, and the bottom of roller is immersed in the HF solution in a HF grooves In, bottom of the roller with silicon chip in liquid rotation process contacts with the HF solution on roller, removes the PSG of the silicon chip back side；
Step 3, the upper and lower surface with deionized water rinsing silicon chip, drying and processing is carried out to silicon chip；
Step 4, silicon chip is put into etching groove using silicon chip flower basket, silicon chip is immersed in the alkali lye in etching groove and is carved Erosion；
Step 5, silicon chip is put into the first tank, silicon chip is immersed in the deionized water in the first tank and cleans；
Step 6, silicon chip is put into rinse bath, silicon chip is immersed in carries out RCA cleanings in the cleaning fluid in rinse bath；
Step 7, silicon chip is put into the second tank, silicon chip is immersed in the deionized water in the second tank and cleans；
Step 8, silicon chip is put into the 2nd HF grooves, silicon chip is immersed in the HF solution in the 2nd HF grooves carries out pickling removal silicon chip The PSG of upper surface；
Step 9, silicon chip is put into the 3rd tank, silicon chip is immersed in the deionized water in the 3rd tank and cleans；
Step 10, silicon chip is put into drying tank and dries.
2. it is as claimed in claim 1 to polish lithographic method, it is characterised in that the water of silicon chip top surface is in 5mg in the step 1 ~8mg。
3. it is as claimed in claim 1 to polish lithographic method, it is characterised in that the liquid level of HF solution exists in the step 2 At 1/3 ~ 2/3 position of roller diameter.
4. it is as claimed in claim 1 to polish lithographic method, it is characterised in that the HF liquid quality fractions in a HF grooves It is room temperature in the temperature of 2% ~ 8%, HF solution.
5. it is as claimed in claim 1 to polish lithographic method, it is characterised in that the alkali lye in the etching groove is KOH and addition The mixed liquor of agent, KOH concentration is 2.5% ~ 5%, and additive concentration is 0.5% ~ 2%, and the temperature of alkali lye is 60 DEG C ~ 80 DEG C, during reaction Between be 1min ~ 3min.
It is 6. as claimed in claim 1 to polish lithographic method, it is characterised in that the alkali lye in the etching groove is TMAH solution, TMAH concentration is 2.5% ~ 10%, and the temperature of alkali lye is 60 DEG C ~ 90 DEG C, and the reaction time is 1min ~ 10min.
7. polishing lithographic method as claimed in claim 1, it is characterised in that the cleaning fluid in the rinse bath is by volume ratio 1:10 NH3·H2O and H2O2Mixed solution, volume ratio are 1:4 HF and H2O2Mixed solution, volume ratio are 1:3 HCL and H2O2One or more combination in mixed solution is formed, and the reaction time is 1min ~ 3min.
8. it is as claimed in claim 1 to polish lithographic method, it is characterised in that the HF liquid quality fractions in the 2nd HF grooves 2% ~ 8%.
9. it is as claimed in claim 1 to polish lithographic method, it is characterised in that in the etching groove, rinse bath and the 2nd HF grooves Solution by bubbling uniform treatment.
CN201710033048.6A 2017-01-18 2017-01-18 A kind of polishing lithographic method of PERC solar cells Pending CN106784161A (en)

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Cited By (24)

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CN107863398A (en) * 2017-10-30 2018-03-30 扬州协鑫光伏科技有限公司 The preparation method of the black silicon silicon chip of one side wet method
CN107887459A (en) * 2017-10-30 2018-04-06 扬州协鑫光伏科技有限公司 The black silicon silicon chip of one side wet method
CN108649098A (en) * 2018-04-19 2018-10-12 常州捷佳创精密机械有限公司 A kind of method of silicon chip single side etching polishing
CN109004062A (en) * 2018-07-04 2018-12-14 常州捷佳创精密机械有限公司 The method and apparatus that alkaline system polishes silicon chip erosion is realized using ozone
CN109037112A (en) * 2018-08-06 2018-12-18 通威太阳能（安徽）有限公司 A kind of method that crystal silicon solar SE battery etching uses inorganic base
CN109378357A (en) * 2018-09-06 2019-02-22 横店集团东磁股份有限公司 A kind of PERC double-side solar cell wet-etching technology
CN109449248A (en) * 2018-09-17 2019-03-08 浙江爱旭太阳能科技有限公司 A kind of preparation method of high efficiency SE-PERC solar battery
CN109473505A (en) * 2018-09-17 2019-03-15 横店集团东磁股份有限公司 A kind of wet etching method
CN109616546A (en) * 2018-10-30 2019-04-12 苏州腾晖光伏技术有限公司 A kind of preparation method and production line of crystal silicon solar batteries
CN109713053A (en) * 2018-12-27 2019-05-03 江苏日托光伏科技股份有限公司 A kind of preparation method of MWT solar battery
CN109768120A (en) * 2018-12-29 2019-05-17 江苏日托光伏科技股份有限公司 A kind of preparation method of the MWT without exposure mask solar battery
CN109979862A (en) * 2019-04-22 2019-07-05 通威太阳能（成都）有限公司 A kind of etching groove for promoting two-sided PERC battery appearance yield and reducing acid consumption
CN110165016A (en) * 2019-04-15 2019-08-23 南通苏民新能源科技有限公司 It is a kind of for improving the production method of PERC battery
CN110676153A (en) * 2019-09-20 2020-01-10 常州捷佳创精密机械有限公司 Solar cell, ozone solution applying device and preparation method of solar cell
CN110752270A (en) * 2019-09-20 2020-02-04 常州捷佳创精密机械有限公司 Solar cell, gaseous ozone applying device and preparation method of solar cell
CN110922970A (en) * 2019-11-29 2020-03-27 南京纳鑫新材料有限公司 PERC battery back polishing additive and technology
WO2020073720A1 (en) * 2018-10-12 2020-04-16 浙江爱旭太阳能科技有限公司 Method for removing excess film from front surface of crystalline silicon solar cell
CN111074350A (en) * 2019-12-20 2020-04-28 晋能光伏技术有限责任公司 Novel etching alkali tank
CN112157655A (en) * 2020-09-21 2021-01-01 常州科讯精密机械有限公司 Flower basket free path implementation method, software system, device, server and system
CN113481493A (en) * 2021-09-06 2021-10-08 南通正德江海机械制造有限公司 Passivating device for machine-building
CN113539813A (en) * 2021-06-08 2021-10-22 天津爱旭太阳能科技有限公司 Monocrystalline silicon piece back polishing method and silicon piece
CN113659040A (en) * 2021-09-08 2021-11-16 苏州潞能能源科技有限公司 Process for treating alkali polishing defective piece of PERC solar cell
CN114883190A (en) * 2022-03-30 2022-08-09 江苏亚电科技有限公司 Method for removing PSG layer on single surface of silicon wafer
CN114899125A (en) * 2022-03-30 2022-08-12 江苏亚电科技有限公司 Chain silicon wafer removes PSG layer equipment

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CN103378183A (en) * 2013-07-02 2013-10-30 国电光伏有限公司 Double-faced light-transmission nanwire texture heterogeneous junction solar battery and manufacturing method thereof
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CN107863398B (en) * 2017-10-30 2019-09-03 扬州协鑫光伏科技有限公司 The preparation method of the black silicon silicon wafer of single side wet process
CN107887459A (en) * 2017-10-30 2018-04-06 扬州协鑫光伏科技有限公司 The black silicon silicon chip of one side wet method
CN107863398A (en) * 2017-10-30 2018-03-30 扬州协鑫光伏科技有限公司 The preparation method of the black silicon silicon chip of one side wet method
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Application publication date: 20170531