CN210684001U - High-efficient single crystal texturing equipment - Google Patents
High-efficient single crystal texturing equipment Download PDFInfo
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- CN210684001U CN210684001U CN201921319021.4U CN201921319021U CN210684001U CN 210684001 U CN210684001 U CN 210684001U CN 201921319021 U CN201921319021 U CN 201921319021U CN 210684001 U CN210684001 U CN 210684001U
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- 239000013078 crystal Substances 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 68
- 239000010703 silicon Substances 0.000 claims abstract description 68
- 239000002253 acid Substances 0.000 claims abstract description 57
- 239000003513 alkali Substances 0.000 claims abstract description 41
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052709 silver Inorganic materials 0.000 claims abstract description 12
- 239000004332 silver Substances 0.000 claims abstract description 12
- 239000007788 liquid Substances 0.000 claims description 94
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 63
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 48
- 238000004140 cleaning Methods 0.000 claims description 45
- 239000000243 solution Substances 0.000 claims description 28
- 238000005406 washing Methods 0.000 claims description 27
- 239000011259 mixed solution Substances 0.000 claims description 23
- 230000004048 modification Effects 0.000 claims description 14
- 238000012986 modification Methods 0.000 claims description 14
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(I) nitrate Inorganic materials [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 11
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 238000002310 reflectometry Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000005554 pickling Methods 0.000 abstract description 4
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000005034 decoration Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 54
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 9
- 230000009469 supplementation Effects 0.000 description 9
- 230000001502 supplementing effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 5
- 210000004027 cell Anatomy 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000005457 ice water Substances 0.000 description 4
- 210000002268 wool Anatomy 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 210000005056 cell body Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a high-efficient single crystal texturing equipment, include loading attachment, ultrasonic cleaning groove, basin A, single crystal alkali texturing groove, basin B, sour texturing groove, basin C, the pickling silver groove that goes, basin D, pickling decoration groove, basin E, alkali wash tank, basin F, descaling bath, basin G, carry pull groove, unloader slowly that connect gradually according to silicon chip direction of delivery. The utility model has the advantages that: the utility model discloses a texturing equipment provides realizable texturing equipment for the technology that carries out the texturing through the mode that alkali texturing and acid texturing combined, forms the even and low matte of reflectivity of matte, has good texturing effect, and can promote the electrical property and the outward appearance of battery piece, can reform transform on traditional single crystal texturing equipment, and production efficiency is high, degree of automation is high, the environmental protection effectively realizes the texturing process, provides effective way for the production of accurate single crystal battery piece.
Description
Technical Field
The utility model relates to a solar energy polycrystalline silicon cell manufacturing, in particular to a monocrystal texture etching device.
Background
At present, a single crystal cell in the photovoltaic industry is brought to a new development opportunity, and various large cell factories are invested in single crystal route transformation, in the production process of the single crystal cell, the first step of technological process is single crystal texturing, the single crystal texturing mainly has the function of removing dirty and damaged layers on the surface of a silicon wafer, and a low-reflectivity high-quality textured surface with a light-showing effect is formed on the surface of the silicon wafer so as to improve the efficiency of the cell.
At the present stage, the single crystal texture making is mainly conventional alkali texture making, and a special pyramid structure is formed by using the anisotropy of a silicon wafer in an alkali solution, namely the (111) crystal face corrosion rate and the (100) face corrosion speed in the silicon crystal are the slowest, so that after the silicon crystal is corroded by the alkali solution. The monocrystalline silicon piece is made into a suede surface by adopting an alkali suede making mode, the chemical reaction has limitation, and when the pyramid on the surface of the suede surface is larger, the reflectivity is larger, so that the efficiency of the battery piece is influenced; when the pyramids on the surface of the texture surface are smaller, the reflectivity is reduced, but the uniformity of the texture surface is poor, and the uniformity of the texture surface directly influences the film coating effect of a silicon wafer, the uniformity of a PN junction and the spectral response of a battery piece, so how to improve the uniformity of the texture surface and reduce the reflectivity becomes the technical bottleneck at present.
On the other hand, the existing single crystal texturing machine can only perform alkali texturing, limitation exists, the single crystal texturing surface prepared by the method is not easy to control, the problem that the texturing surface on the surface of a silicon wafer is too large (namely the reflectivity of the silicon wafer is higher) or the texturing surface is not uniform is easily generated, the conversion efficiency and the appearance of a battery piece are influenced, and the defects are more prominent particularly in the aspect of texturing of a quasi-single crystal silicon piece. If the quasi-monocrystalline texturing is carried out by only alkali texturing, the uniformity difference of the appearance is obvious, and particularly the covering of the defects on the surface of the aligned monocrystalline silicon piece is poor.
At present, quasi-single crystal is rapidly developed by virtue of cost advantages, so that single crystal texturing equipment capable of manufacturing high-quality textured surfaces is urgently needed, and therefore, a battery piece which is low in cost, high in efficiency and attractive is manufactured.
SUMMERY OF THE UTILITY MODEL
Utility model purpose: in view of the above problems, an object of the present invention is to provide a single crystal texturing apparatus, which can improve the texturing effect, especially can be applied to quasi-single crystal texturing, and improve the performance and appearance of the battery cell.
The technical scheme is as follows: a kind ofThe efficient single crystal texturing equipment comprises a feeding device, an ultrasonic cleaning tank, a water tank A, a single crystal alkali texturing tank, a water tank B, an acid texturing tank, a water tank C, an acid-washing silver-removing tank, a water tank D, an acid-washing modification tank, a water tank E, an alkali washing tank, a water tank F, an acid washing tank, a water tank G, a slow pulling tank and a discharging device which are sequentially connected according to the conveying direction of a silicon wafer, wherein the ultrasonic cleaning tank is provided with a material containing NaOH and H2O2The single crystal alkali texturing tank provides a mixed solution B containing NaOH and a single crystal silicon texturing additive, and the acid texturing tank provides a mixed solution A containing HF and HNO3、AgNO3The acid-washed silver-removing tank provides HNO-containing liquid C3The acid cleaning modification tank provides a solution containing HF and HNO3The alkaline washing tank provides a solution F containing KOH, and the acid washing tank provides a mixed solution G containing HCl and HF.
Further, the silicon wafer conveying device further comprises a mechanical arm gripper for conveying the silicon wafer.
Furthermore, the ultrasonic cleaning tank, the water tank A, the single crystal alkali wool making tank, the water tank B, the acid wool making tank, the acid silver removing tank, the acid cleaning modification tank, the alkali cleaning tank, the acid cleaning tank and the slow pulling tank are all provided with a heating device and a temperature detector, and the temperature of liquid in the tank body is controlled.
Further, air exhaust devices are arranged above the liquid level in the tank bodies of the ultrasonic cleaning tank, the single crystal alkali texturing tank, the acid silver removing tank, the acid cleaning modification tank, the alkali cleaning tank and the acid cleaning tank.
Further, ultrasonic generators are mounted on the ultrasonic cleaning tank and the tank body of the water tank A.
Furthermore, the acid-washing silver tank is provided with at least two independent tanks, each tank body is provided with an overflow port, the acid-washed liquid in the latter tank body enters the former tank body through the overflow port on the latter tank body, and the acid-washed liquid in the first tank body overflows out of the tank body through the overflow port on the former tank body.
Furthermore, the acid texturing groove and the acid cleaning and modifying groove are both provided with a heat exchanger and an ice water machine which are arranged outside, and the liquid in the groove body and the ice water machine exchange heat through the heat exchanger.
Furthermore, a counting detector is arranged on the feeding device.
Further, the equipment is controlled to operate through a PLC.
Has the advantages that: compared with the prior art, the utility model has the advantages that: the utility model discloses a texturing equipment provides realizable texturing equipment for the technology that carries out the texturing through the mode that alkali texturing and acid texturing combined, forms the even and low matte of reflectivity of matte, has good texturing effect, and can promote the electrical property and the outward appearance of battery piece, can reform transform on traditional single crystal texturing equipment, and production efficiency is high, degree of automation is high, the environmental protection effectively realizes the texturing process, provides effective way for the production of accurate single crystal battery piece.
Drawings
FIG. 1 is a block diagram of the apparatus of the present invention;
FIG. 2 is a schematic view of an ultrasonic cleaning tank;
FIG. 3 is a schematic view of a structure of a sink A;
FIG. 4 is a schematic structural diagram of a single crystal alkali texturing tank;
FIG. 5 is a schematic diagram of an acid texturing tank;
FIG. 6 is a schematic view of a structure of an acid pickling silver removal tank;
FIG. 7 is a schematic view of the structure of the pickling line.
Detailed Description
The invention will be further elucidated with reference to the drawings and the specific embodiments. These examples are provided only for illustrating the present invention and are not intended to limit the scope of the present invention.
A high-efficiency single crystal texturing device comprises a feeding device 1 consisting of a feeding machine table 101 and a feeding conveying table 102, a blanking device 17 consisting of a blanking machine table 1701 and a blanking conveying table 1702, a tank body station module consisting of an ultrasonic cleaning tank 2, a water tank A3, a single crystal alkali texturing tank 4, a water tank B5, an acid texturing tank 6, a water tank C7, an acid-washing silver-removing tank 8, a water tank D9, an acid-washing modification tank 10, a water tank E11, an alkali washing tank 12, a water tank F13, an acid-washing tank 14, a water tank G15 and a slow lifting tank 16, and a mechanical arm motion module with a mechanical arm hand 18, as shown in figure 1. According to the silicon wafer conveying direction, a feeding machine table 101, a feeding conveying table 102, an ultrasonic cleaning tank 2, a water tank A3, a single crystal alkali texturing tank 4, a water tank B5, an acid texturing tank 6, a water tank C7, an acid silver removing tank 8, a water tank D9, an acid cleaning modification tank 10, a water tank E11, an alkali cleaning tank 12, a water tank F13, an acid cleaning tank 14, a water tank G15, a slow pulling tank 16, a discharging machine table 1701 and a discharging conveying table 1702 are sequentially connected, and a mechanical arm gripper 18 moves transversely above each tank body to convey the silicon wafer to each tank body. The equipment is controlled by a PLC to operate, controls solution preparation, solution supplement and the like, and treats the silicon wafer under a specified process.
The equipment during operation, place basket of flowers 19 that will be equipped with the silicon chip in material loading board department, the material loading platform is equipped with automatic just device and puts anti-protection device, and simultaneously, photoelectric sensor is equipped with to the side of material loading board, whether can automatic monitoring have basket of flowers to put anti-, and equipped with and put anti-alarm prompt facility, be provided with the count detector on the material loading groove, the silicon chip quantity of response material loading, for PLC provides the signal source, PLC mends liquid in each groove according to the piece number control, then convey the basket of flowers to the material loading conveying bench through the conveyer belt on the material loading bench, convey the basket of flowers that is equipped with the silicon chip to each cell body of cell body station module in proper order by the arm tongs again, then the silicon chip gets into the unloading board, the unloading conveying bench, at last be sent into the drier.
The ultrasonic cleaning tank 2, the water tank A3, the single crystal alkali texturing tank 4, the water tank B5, the acid texturing tank 6, the acid-washing silver-removing tank 8, the acid-washing modification tank 10, the alkali cleaning tank 12, the acid cleaning tank 14 and the slow pulling tank 16 are all provided with a heating device and a temperature detector at the bottom of the tank body, and the temperature of liquid in the tank body is controlled. The acid texturing groove 6 and the acid cleaning modification groove 10 are both provided with a heat exchanger and a water chiller to control the temperature of liquid in the groove body. Ultrasonic generators are respectively arranged on the ultrasonic cleaning tank 2 and the tank body of the water tank A3. And the initial liquid preparation and liquid supplementation of each tank body of the tank body station module adopt an automatic liquid supplementation system. And each tank body except the water tank in the tank body station module is provided with an air exhaust device to form an air exhaust system, and the air exhaust devices are internally provided with internal inductors which can automatically adjust the air exhaust amount. In the running process of the equipment, the air exhaust device is always in an open state, so that acid gas and alkali gas in the equipment are mainly discharged in time, and the corrosion of the acid and the alkali to the equipment is reduced. And cover plates capable of being automatically opened and closed are arranged above the groove bodies, when the mechanical arm grippers grab the flower basket to reach the upper part of the groove bodies, the cover plates are automatically opened, when the reaction time of the silicon wafers in the groove bodies reaches a specified value, the cover plates are automatically opened, and meanwhile, the mechanical arm grippers take out the flower basket and sequentially place the flower basket into the next groove body. The mechanical arm grippers can be arranged in a plurality of numbers and respectively correspond to the groove bodies, and can work simultaneously, so that the productivity is improved.
The ultrasonic cleaning tank 2 is provided with NaOH and H2O2The structure of the mixed liquid A is shown in the attached figure 2: an alkaline solution is supplied to the periphery of the tank body 208, hydrogen peroxide is supplied to the periphery of the tank body 209, pure water is supplied to the periphery of the tank body 2010, chemicals supplied to the periphery of the tank body need to be added into a liquid supplementing barrel 207, initial liquid preparation and automatic liquid supplementation are carried out through a valve 206 and a valve 205, the chemicals enter the tank body from a liquid inlet 2011, and a liquid supplementing system is provided with a valve connected with a PLC; the bottom of the tank body is provided with a heater 204 for heating liquid in the tank body, and is also provided with a temperature detector 202, the temperature detector is connected with the PLC, one end of the temperature detector is arranged in the tank body for measuring temperature, and the other end is connected with the PLC; an ultrasonic generator 2012 is arranged on the side surface of the tank body to carry out ultrasonic vibration on the liquid, and the ultrasonic generator is connected with the PLC; during normal production, the tank body overflows the redundant liquid out of the tank body through the overflow port 201; after the service life of the liquid in the tank body is over, the liquid is discharged out of the tank body through the liquid outlet 203; an air outlet 2013 is arranged above the liquid level of the groove body.
The water tank A3 is used for secondary cleaning of silicon wafers, and the structure of the water tank A3 is shown in the attached figure 3: 301 is an overflow port, 302 is a temperature detector, the bottom of the tank body is provided with a heater 303, 304 is provided with pure water for the periphery, 305 is a liquid outlet, 306 is a liquid inlet, and the side surface of the tank body is provided with an ultrasonic generator 307.
The single crystal alkali texturing tank 4 provides a mixed solution B containing NaOH and a single crystal silicon texturing additive, and the structure of the mixed solution B is shown in the attached figure 4: 408 is an alkali solution supplied to the periphery, 409 is pure water supplied to the periphery, chemicals supplied to the periphery are added into a liquid supplementing barrel 407, initial liquid preparation and automatic liquid supplementation are carried out through a valve 406 and a valve 405, the chemicals enter the tank body from a liquid inlet 4011, and a liquid supplementing system is provided with a valve connected with a PLC; 4010 is additive for texturing monocrystalline silicon, because of small amount, it needs to be added manually, and the liquid is accurately added by metering pump, which is connected with PLC; 401 is an overflow port, 402 is a temperature detector, 403 is a liquid outlet, and the bottom of the tank body is provided with a heater 404; an air outlet 4012 is arranged above the liquid level of the tank body.
The acid texturing tank 6 is provided with HF and HNO3、AgNO3The structure of the mixed liquid C is shown in the attached figure 5: 608 HF for peripheral supply, 609 pure water for peripheral supply, 6010 HNO for peripheral supply3Chemicals supplied from the periphery are added into a liquid supplementing barrel 607, initial liquid preparation and automatic liquid supplementation are carried out through a valve 606 and a valve 605, and then the initial liquid preparation and the automatic liquid supplementation enter the tank body from a liquid inlet 6015, and a liquid supplementing system is provided with a valve connected with the PLC; 6011 peripheral supply of AgNO3The solution needs to be added manually due to small amount, and the solution is accurately added through a metering pump which is connected with the PLC; in the normal production process, the temperature of the liquid in the tank body gradually rises, the temperature detector 602 feeds back the temperature change of the liquid in the tank body to the PLC, the temperature is adjusted through the PLC, the liquid is circulated through the heat exchanger 6013 under the action of the circulating pump 6012, and the liquid in the tank body and the liquid in the ice water machine 6014 perform heat exchange to realize temperature reduction; a heater 604 is arranged at the bottom of the tank body to heat liquid in the tank body, a temperature detector 602 is connected with the PLC, one end of the temperature detector is arranged in the tank body to measure temperature, and the other end of the temperature detector is connected with the PLC; during normal production, the trough body overflows the redundant liquid out of the trough body through the overflow port 601; after the service life of the liquid in the tank body is over, the liquid is discharged out of the tank body through a liquid outlet 603; an air outlet 6016 is provided above the liquid level of the bath.
One, two, three and the like can be arranged as required in the acid silver-removing tank 8, and the acid silver-removing tank 8 provides HNO3The structure of solution D is illustrated by two acid-washing silver tanks as shown in FIG. 6: 808. 8014 peripheral supply of HNO3809 and 8015 are used for supplying pure water at the periphery, chemicals supplied at the periphery need to be added into the liquid supplementing barrels 807 and 8013, then initial liquid preparation and automatic liquid supplementation are carried out through the valves 806 and 8012 and the valves 805 and 8011 respectively, and then the liquid after acid washing in the latter trough body overflows into the trough body through the overflow port 6020The former tank body is preliminarily cleaned, so that the using amount of acid can be saved, and the liquid supplementing system is provided with a valve connected with the PLC; the bottom parts of the two tank bodies are respectively provided with a heater 804 and a heater 8022 for heating liquid in the tank bodies, the two tank bodies are respectively provided with a temperature detector 802 and a temperature detector 8016, the temperature detectors are connected with a PLC, one end of each temperature detector is arranged in the tank body for measuring temperature, and the other end of each temperature detector is connected with the PLC; during normal production, the previous tank body overflows the redundant liquid out of the tank body through the overflow port 801; after the service life of the liquid in the tank body is over, the liquid is discharged out of the tank body through the liquid discharge ports 803 and 8010; air outlets 8019, 8021 are arranged above the liquid level of the tank.
The acid cleaning modification tank 10 is supplied with HF and HNO3The structure of the mixed solution E is shown in the attached figure 7: 1008 supplying HF to the periphery, 1009 supplying pure water to the periphery, 1010 supplying HNO to the periphery3Chemicals supplied from the periphery are added into a liquid supplementing barrel 1007, initial liquid preparation and automatic liquid supplementation are carried out through a valve 1006 and a valve 1005, and then the initial liquid preparation and the automatic liquid supplementation enter the tank body from a liquid inlet 1014; in the normal production process, the temperature of the liquid in the tank body is gradually increased, the temperature detector 1002 feeds the temperature change of the liquid in the tank body back to the PLC, the temperature is adjusted through the PLC, the liquid in the tank body is circulated through the heat exchanger 1012 under the action of the circulating pump 1011, and the liquid in the tank body and the liquid in the ice water machine 1013 are subjected to heat exchange to realize cooling; a heater 1004 is arranged at the bottom of the tank body to heat liquid in the tank body, a temperature detector 1002 is connected with the PLC, one end of the temperature detector is arranged in the tank body to measure the temperature, and the other end of the temperature detector is connected with the PLC; during normal production, the tank body overflows the redundant liquid out of the tank body through the overflow port 1001; after the life of the liquid in the tank body is over, the liquid is discharged out of the tank body through the liquid discharge port 1003; an air outlet 1015 is arranged above the liquid surface of the tank body. The caustic washing tank 12 supplies a solution F containing KOH, and the acid washing tank 14 supplies a mixed solution G containing HCl and HF.
The utility model discloses a making herbs into wool equipment is used for following a high-efficient single crystal making herbs into wool technology, including following step:
HF in the steps 301, 303 and 5 is HF solution with mass concentration of 49%, and HNO in the steps 301, 302 and 3033Are all HNO with the mass concentration of 68 percent3The solution, the HCl in step 5 is 38% by mass HCl solution, and the KOH in step 4 is 48% by mass KOH solution.
Comparative example
The equipment for realizing the single crystal texturing process of the following existing alkali texturing technology comprises the following steps:
The HF in the step 4 is an HF solution with the mass concentration of 49%, and the HCl solution with the mass concentration of 38%.
Will the utility model discloses the little matte battery piece of receiving that makes and the comparison is made receives little matte battery piece and is carried out the electrical property contrast, and the result is as follows:
| class of experiment | Voc | Isc | Rs | Rsh | FF | Eta | Irev2 |
| Comparative example | 0.67 | 9.693 | 0.0016 | 716 | 80.56 | 21.31％ | 0.044 |
| Example 1 | 0.67 | 9.798 | 0.0014 | 869.5 | 81.33 | 21.85％ | 0.047 |
It is thus clear that, through the utility model discloses a high-efficient single crystal texturing equipment, the efficiency of battery piece can promote about 0.45%.
Claims (9)
1. The utility model provides a high-efficient single crystal system fine hair equipment which characterized in that: comprises a feeding device (1), an ultrasonic cleaning tank (2), a water tank A (3), a single crystal alkali texturing groove (4), a water tank B (5), an acid texturing groove (6), a water tank C (7), an acid cleaning silver removing groove (8), a water tank D (9), an acid cleaning decorative groove (10), a water tank E (11), an alkali cleaning groove (12), a water tank F (13), an acid cleaning groove (14), a water tank G (15), a slow lifting groove (16) and a discharging device (17) which are sequentially connected according to the conveying direction of a silicon wafer, wherein the ultrasonic cleaning device comprises a feeding device (1), an ultrasonic cleaning tank (2), aThe washing tank (2) is provided with NaOH and H2O2The single crystal alkali texturing tank (4) provides a mixed solution B containing NaOH and a single crystal silicon texturing additive, and the acid texturing tank (6) provides a mixed solution A containing HF and HNO3、AgNO3The acid-washed silver tank (8) supplies HNO-containing liquid C3The acid cleaning modification tank (10) provides a solution D containing HF and HNO3The alkaline washing tank (12) supplies a solution F containing KOH, and the acid washing tank (14) supplies a mixed solution G containing HCl and HF.
2. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: also includes a robot gripper (18) for transferring the silicon wafer.
3. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: the ultrasonic cleaning tank (2), the water tank A (3), the single crystal alkali texturing tank (4), the water tank B (5), the acid texturing tank (6), the acid cleaning silver removing tank (8), the acid cleaning modification tank (10), the alkali cleaning tank (12), the acid cleaning tank (14) and the slow pulling tank (16) are all provided with a heating device and a temperature detector, and the temperature of liquid in the tank body is controlled.
4. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: and exhaust devices are arranged above the liquid level in the tank bodies of the ultrasonic cleaning tank (2), the single crystal alkali texturing tank (4), the acid texturing tank (6), the acid washing silver removing tank (8), the acid washing modification tank (10), the alkali cleaning tank (12) and the acid cleaning tank (14).
5. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: ultrasonic generators are arranged on the ultrasonic cleaning tank (2) and the tank body of the water tank A (3).
6. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: the acid-washing silver tank (8) is provided with at least two independent tanks, each tank body is provided with an overflow port, the acid-washed liquid in the latter tank body enters the former tank body through the overflow port on the latter tank body, and the acid-washed liquid in the first tank body overflows out of the tank body through the overflow port on the former tank body.
7. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: the acid texturing groove (6) and the acid cleaning modification groove (10) are both provided with a heat exchanger and a water chiller which are arranged outside, and the liquid in the groove body and the water chiller exchange heat through the heat exchanger.
8. The high-efficiency single crystal texturing apparatus according to claim 1, wherein: and a counting detector is arranged on the feeding device (1).
9. The efficient single crystal texturing apparatus according to any one of claims 1 to 8, wherein: the equipment is controlled to operate by a PLC.
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| CN201921319021.4U CN210684001U (en) | 2019-08-14 | 2019-08-14 | High-efficient single crystal texturing equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110438571A (en) * | 2019-08-14 | 2019-11-12 | 中节能太阳能科技有限公司 | A kind of efficient monocrystalline process for etching and its equipment |
| CN115020548A (en) * | 2022-07-14 | 2022-09-06 | 通威太阳能(金堂)有限公司 | A silicon wafer texturing device and a texturing process |
| CN118422356A (en) * | 2024-05-06 | 2024-08-02 | 淮安捷泰新能源科技有限公司 | Ultrasonic-assisted texturing method and device |
| CN119153588A (en) * | 2024-11-19 | 2024-12-17 | 常州臣佑光伏科技有限公司 | Cleaning and texturing equipment for single crystal battery piece |
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2019
- 2019-08-14 CN CN201921319021.4U patent/CN210684001U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110438571A (en) * | 2019-08-14 | 2019-11-12 | 中节能太阳能科技有限公司 | A kind of efficient monocrystalline process for etching and its equipment |
| CN115020548A (en) * | 2022-07-14 | 2022-09-06 | 通威太阳能(金堂)有限公司 | A silicon wafer texturing device and a texturing process |
| CN115020548B (en) * | 2022-07-14 | 2023-07-25 | 通威太阳能(金堂)有限公司 | Silicon wafer texturing device and texturing process |
| CN118422356A (en) * | 2024-05-06 | 2024-08-02 | 淮安捷泰新能源科技有限公司 | Ultrasonic-assisted texturing method and device |
| CN119153588A (en) * | 2024-11-19 | 2024-12-17 | 常州臣佑光伏科技有限公司 | Cleaning and texturing equipment for single crystal battery piece |
| CN119153588B (en) * | 2024-11-19 | 2025-02-07 | 常州臣佑光伏科技有限公司 | Cleaning and texturing equipment for single crystal battery piece |
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Effective date of registration: 20211208 Address after: No.9, Beishan Road, New District, Zhenjiang City, Jiangsu Province Patentee after: CECEP SOLAR ENERGY TECHNOLOGY (ZHENJIANG) Co.,Ltd. Address before: 100144 Building 1, No. 3, Xijing Road, Badachu high tech park, Shijingshan District, Beijing Patentee before: CECEP SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee before: Cecep solar energy technology (Zhenjiang) Co., Ltd |