CN210325830U - Large-size laminated tile battery texturing equipment - Google Patents
Large-size laminated tile battery texturing equipment Download PDFInfo
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- CN210325830U CN210325830U CN201921371476.0U CN201921371476U CN210325830U CN 210325830 U CN210325830 U CN 210325830U CN 201921371476 U CN201921371476 U CN 201921371476U CN 210325830 U CN210325830 U CN 210325830U
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Abstract
The utility model provides a large-size laminated tile battery texturing device, which comprises an oxidation unit and a first pickling unit before a texturing unit, wherein a discharge port of the oxidation unit is connected with a feeding port of the first pickling unit, and the first pickling unit is arranged close to the texturing unit; and the oxidation unit and the first pickling unit are both provided with rinsing baths. The utility model discloses making herbs into wool equipment is particularly useful for the size and is 160 supplementarily and 260mm square silicon chip, carry out the oxidation formation oxide layer of easily getting rid of through the metallic impurity with the silicon chip surface in advance, carry out the complexation to this oxide layer after first pickling again, form a complex that can be dissolved in water, and then can effectively get rid of the greasy dirt of pasting and applying in this oxide layer, improve silicon chip surface cleanliness factor, provide good surface foundation for follow-up preparation matte, after in proper order through preliminary treatment, making herbs into wool, aftertreatment, secondary pickling and stoving again, can obtain the small and even silicon chip of surface structure, make battery electrical property improve 0.01-0.03%.
Description
Technical Field
The utility model belongs to the technical field of crystalline silicon solar cell preparation, especially, relate to a jumbo size pile tile battery texturing equipment.
Background
The solar photovoltaic cell texturing process is to remove a mechanical damage layer on the surface of a silicon wafer by using alkali corrosion, form a pyramid-shaped textured surface, reduce the reflection of light on the surface of the silicon wafer, improve the absorption of the silicon wafer on the light and further increase the photoelectric conversion efficiency of the solar cell. With the development of the photovoltaic market, the requirements of high power and high conversion rate need to be met while the production cost of the solar cell module needs to be reduced, so that the small-size silicon wafers used by the existing laminated cell are gradually eliminated due to small effective area and low cell conversion power. The existing process is to carry out texturing, post-treatment, acid washing and drying after the silicon wafer is directly pretreated, the increase of the size of the silicon wafer of the stack-tile battery causes more metal impurities and oil stains to appear in the cutting process of the silicon wafer, the residual impurities on the surface of the large-size silicon wafer cannot be completely removed according to the existing texturing process, the dirt or spots are easy to appear on the surface of the textured silicon wafer, the conductivity of the battery is seriously influenced, the conversion efficiency of the battery is low, the power of the assembly is low, and the product quality cannot be ensured.
Disclosure of Invention
The to-be-solved problem of the utility model is to provide a jumbo size pile tile battery texturing equipment, be applicable to especially that the size is 160 and give first place to the texturing of 260mm square silicon chip, solved among the prior art texturing in-process silicon chip surface greasy dirt and metallic impurity and got rid of unclean and lead to the technical problem that battery electrical property is low, improve silicon chip surface cleanliness factor.
In order to solve the technical problem, the utility model discloses a technical scheme is:
a large-size laminated tile battery texturing device comprises an oxidation unit and a first pickling unit before a texturing unit, wherein a discharge hole of the oxidation unit is connected with a feeding hole of the first pickling unit, and the first pickling unit is arranged close to the texturing unit; and the oxidation unit and the first pickling unit are both provided with rinsing baths.
Furthermore, the oxidation unit also comprises a feeding groove and an oxidation groove, the oxidation groove is positioned between the feeding groove and the rinsing groove, and the rinsing groove is arranged close to the primary pickling unit.
Further, the first pickling unit further comprises a first pickling tank, and the first pickling tank is close to the oxidation tank.
Furthermore, a pretreatment unit is arranged before the wool making unit, and the pretreatment unit is positioned after the first pickling unit.
Further, the pretreatment unit comprises the rough polishing groove and the pre-cleaning groove, the rough polishing groove is close to the first pickling unit, and the pre-cleaning groove is far away from the first pickling unit.
Furthermore, the texturing unit comprises a texturing groove, and the texturing groove is arranged close to the pretreatment unit.
The device further comprises a post-processing unit, a secondary pickling unit and a drying unit, wherein the post-processing unit, the secondary pickling unit and the drying unit are sequentially arranged behind the wool making unit.
Further, the post-processing unit comprises a post-cleaning tank, and the secondary pickling unit comprises a secondary pickling tank.
Furthermore, the rinsing tanks are arranged behind the pre-cleaning tank, the texturing tank, the post-cleaning tank and the secondary pickling tank.
Further, the drying unit comprises a full lifting groove, a drying groove and a discharging groove in sequence, and the full lifting groove is close to the secondary pickling unit.
Adopt the utility model discloses a texturing equipment is particularly useful for the size and is 160 supplyes the texturing of the square silicon chip of 260mm, oxidizes the oxide layer that forms an easily getting rid of through the metallic impurity with the silicon chip surface in advance, again after first pickling to this oxide layer complex, forms a complex that can be dissolved in water, and then can effectively get rid of the greasy dirt that applies in this oxide layer of subsides, improves silicon chip surface cleanliness factor, provides good surface foundation for follow-up preparation matte. Then, after pretreatment, texturing, post-treatment, secondary acid washing and drying, a silicon wafer with a tiny and uniform surface structure can be obtained, and the conductivity of the battery is improved by 0.01-0.03%.
Drawings
Fig. 1 is a schematic structural diagram of a large-sized laminated battery texturing apparatus according to an embodiment of the present invention;
fig. 2 is a flow chart of a texturing process for a large-sized laminated cell according to an embodiment of the present invention;
FIG. 3 is a microscopic view (3000 times) of a silicon wafer texture surface obtained by texturing in the first embodiment of the present invention;
FIG. 4 is a microscopic view (3000 times) of a silicon wafer texture surface obtained by texturing in the second embodiment of the present invention;
fig. 5 is a microscopic view (3000 times) of a silicon wafer texture surface obtained by texturing in the third embodiment of the present invention.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The utility model provides an in the embodiment provide a jumbo size pile tile battery system fine hair equipment, as shown in FIG. 1, include oxidation unit, pickling unit, preprocessing unit, system fine hair unit, aftertreatment unit, pickling unit and the stoving unit for the second time in proper order, and all respectively be equipped with an independent wash bowl behind oxidation unit, first pickling unit, preprocessing unit, system fine hair unit, aftertreatment unit and the pickling unit for the second time.
Specifically, the oxidation unit comprises a feeding groove 1#, an oxidation groove 2# and a rinsing groove 3# in sequence, pure water is arranged in the feeding groove 1#, the silicon wafer entering the feeding groove 1# is cleaned at normal temperature, the feeding groove 1# is cleaned through bubbling, and the purpose of cleaning is to remove large-particle impurities and silicon powder dust on the outer surface of the silicon wafer. The silicon wafer coming out of the No. 1 feeding tank enters a No. 2 oxidation tank, mixed liquor of sodium hydroxide and water is placed in the No. 2 oxidation tank, ozone gas is introduced into the No. 2 oxidation tank, the ozone can react with the outermost silicon on the double sides of the silicon wafer to generate a silicon dioxide oxidation layer, and the silicon dioxide oxidation layer can generate a water-soluble complex H when meeting hydrofluoric acid2SiF6. In the prior art, silicon is oxidized by hydrogen peroxide, but hydrogen peroxide is volatile, the reaction between hydrogen peroxide and silicon is not easy to control, and the concentration of hydrogen peroxide solution in a groove needs to be monitored all the time during oxidation to prevent over-volatilization, so that the silicon wafer is not oxidized enough; moreover, the hydrogen peroxide is directly discharged after being used, which can pollute the environment,is not easy to be recycled. The flow rate of the ozone can be controlled by adopting the ozone, and compared with hydrogen peroxide, the reaction speed of the ozone and silicon is slower and the ozone can be fully oxidized; meanwhile, the production cost of the ozone is lower than that of the hydrogen peroxide, and the ozone is environment-friendly, so that the ozone is preferably used for replacing the hydrogen peroxide. In the oxidation process, the ozone amount is required to be supplemented periodically to ensure that the surface of the silicon wafer is fully oxidized, so that the surface oxidation effect of the silicon wafer is consistent, and the ozone liquid supplementing amount is 5-25L/h. In the liquid medicine in the No. 2 oxidation tank, sodium hydroxide liquid medicine is used for removing metal impurities on the surface of the silicon wafer, the solution ratio of sodium hydroxide is 3-4%, and the balance is pure water; the oxidation temperature is 40-80 deg.C, and the oxidation time is 1-5 min. Along with the increase of the size of the silicon wafer, the whole volume of the liquid medicine required in each step and the liquid preparation ratio of each component are correspondingly improved in the texturing process so as to ensure the texturing effect of the silicon wafer. In this embodiment, the liquid medicine is replenished once after every 400-through 600-frame silicon wafers are produced, wherein every basket stores 400-through 200-through 400-through silicon wafers, and the number of the silicon wafers loaded in each subsequent basket is the same and is not repeated. In order to ensure the consistency of the concentration of the liquid medicine in the tank and the effect of ensuring the oxidation quality, the liquid supplementing amount of each round of sodium hydroxide is 0.05-0.15L. The oxidation unit oxidizes silicon on the double-layer outer surface of the silicon wafer through ozone gas to form a silicon dioxide oxidation layer which is easy to remove, and other surface impurities or oil stains attached to the oxidation layer can be cleaned by subsequent acid washing, so that the cleaning of metal impurities on the surface of the silicon wafer is accelerated, the cleanliness of the surface of the silicon wafer can be guaranteed to the greatest extent, and a clean plane foundation is laid for subsequent texturing in advance.
And a 3# rinsing bath is arranged behind the 2# oxidation bath, pure water is stored in the 3# rinsing bath, the cleaning time is 0.5-3.5min, and the pure water is periodically and uninterruptedly stored in the 3# rinsing bath for supplementing, so that the liquid medicine on the surface of the oxidized silicon wafer is removed, and meanwhile, metal impurities and oil stains on the surface of the silicon wafer can be cleaned.
Further, the first pickling unit comprises a 4# pickling tank and a 5# rinsing tank, the liquid medicine is a mixed solution of hydrofluoric acid and pure water, the preparation solution ratio of the hydrofluoric acid is 10-15%, the first pickling unit is carried out at normal temperature, and the pickling time is 1-5 min. In the process, the hydrofluoric acid can perform a complex reaction with silicon dioxide on the surface oxide layer of the silicon wafer, and the specific reaction formula is as follows:
6HF+SiO2＝H2SiF6+2H2O
H2SiF6the silicon dioxide is a complex which is easy to dissolve in water, and after being washed by a No. 4 pickling tank, the silicon dioxide of an oxide layer and oil stains attached to the silicon dioxide oxide layer can be completely removed, the surface cleanliness of a silicon wafer can be improved, and a good surface foundation is provided for the subsequent preparation of a suede. In the unit, in order to ensure the consistency of the concentration of hydrofluoric acid in the chemical solution of the No. 4 pickling tank, the chemical solution is supplemented once after the production of 600-frame silicon wafers with 400-fold sand, and the amount of the supplemented hydrofluoric acid is 0.3-0.7L in each round, so that the oxide layer can be removed without using other acid solution. And the silicon wafer after acid washing needs to enter a No. 5 washing tank for water washing so as to remove the acid washing liquid medicine on the surface of the silicon wafer, and simultaneously, the residual metal impurities and oil stains on the surface of the silicon wafer can be removed, so that the surface of the silicon wafer is further ensured to be clean.
In the prior art, the mixed solution of nitric acid and hydrofluoric acid is used for pickling the surface of a loaded silicon wafer directly, and because silicon, nitric acid and hydrofluoric acid do not react independently, when the silicon, the nitric acid and the hydrofluoric acid are positioned simultaneously, the reaction is severe, the corrosion speed is high, the corrosion effect is not controlled well, the proportion of the two acids is not regulated and controlled well, the cleaning effect obtained by direct mixing is not good, and oil stains and metal impurities cannot be removed completely. The method comprises the steps of firstly forming a layer of oxide layer silicon dioxide on the surface of the silicon wafer by using an uncommon ozone gas, then washing liquid medicine on the oxide layer by using water, and then reacting the silicon dioxide by using hydrofluoric acid to form a complex H which is easy to dissolve in water2SiF6Further removing the oxide layer on the surface of the silicon wafer and the oil stain adhered on the surface of the oxide layer by one pass, and discharging along with water; and after oxidation and first acid washing, the silicon wafer is independently cleaned through the independently arranged No. 5 rinsing bath, so that residual metal impurities and oil stains on the surface of the silicon wafer can be completely removed, the cleaning effect on the surface of the silicon wafer is better, and the subsequent texturing is facilitated. Measuring with spectroscopic ellipsometer model M-2000VThe depth of the silicon dioxide layer in the surface of the silicon wafer is tested to be 1-2um, namely the single-layer thinning depth after the silicon wafer is subjected to primary acid washing is 1-2um, and the silicon dioxide layer is completely controllable and meets the requirement.
The pretreatment unit comprises a No. 6 rough polishing tank, a No. 7 pre-cleaning tank and a No. 8 rinsing tank, wherein mixed liquor of sodium hydroxide and pure water is placed in the No. 6 rough polishing tank, so that a cutting damage layer on the surface of a silicon wafer is removed, a double-sided flat surface is formed after corrosion and thinning, and the subsequent preparation of a suede surface is facilitated; and simultaneously, a small amount of metal ions and organic matters remained on the surface of the silicon wafer can be removed. In the unit, the liquid medicine in the No. 6 rough polishing tank is sodium hydroxide with the solution ratio of 4-4.5%, the rough polishing temperature is 60-100 ℃, and after 1-5min, the rough polishing of the silicon wafer can be completed, and the damaged layer on the surface of the silicon wafer is removed. In order to ensure the rough polishing effect, the liquid medicine is supplemented once after the production of the 400-box silicon chips, and the liquid supplementing amount of sodium hydroxide is 0.4-1.2L each time. The liquid medicine in the 7# pre-cleaning tank is a mixed solution of hydrogen peroxide and sodium hydroxide, the solution ratio of the hydrogen peroxide to the sodium hydroxide is 4-7% and 0.2-0.5%, the cleaning temperature is 40-80 ℃, and the cleaning time is 1-5 min. The alkaline solution cleans metal ions and organic matters on the silicon wafer in advance, the cleanliness of the silicon wafer entering the No. 9 texturing tank is ensured, in order to ensure the stability of the concentration of the liquid medicine in the No. 7 pre-cleaning tank, liquid medicine is supplemented alternately once after every 400 frames of silicon wafers are produced, and the liquid supplementing amounts of hydrogen peroxide and sodium hydroxide in each round are 0.5-1.5L and 0.05-0.15L respectively. And after the precleaning is finished, the silicon wafer enters an 8# rinsing bath to clean the liquid medicine on the surface of the silicon wafer. Because the 6# rough polishing tank and the 7# pre-cleaning tank both contain alkali, a rinsing tank does not need to be arranged behind the 6# rough polishing tank for cleaning, and only an 8# rinsing tank needs to be arranged behind the 7# pre-cleaning tank.
The texturing unit comprises a No. 9 texturing tank and a No. 10 water washing tank, wherein a mixed liquid medicine of sodium hydroxide, a part of additive and water is placed in the No. 9 texturing tank, the solution ratio of the sodium hydroxide is 4-4.5%, the additive comprises water, sodium acetate, a defoaming agent and a surfactant, the solution ratio of the additive is 0.6-1%, and after a silicon wafer is textured at the texturing temperature of 60-100 ℃ for 3.5-9.5min, a plurality of densely distributed concave-convex surface tissue structures can be formed on the surface of the silicon wafer in a corrosion mode. The sodium hydroxide with the solution ratio of 4-4.5% is selected, so that the crystalline silicon has anisotropic corrosion characteristics with different corrosion rates in different crystal orientations, a small and uniform pyramid-shaped suede which is fully distributed on the whole silicon surface can be formed on the surface of the silicon wafer, the refraction times of sunlight on the surface of a cell piece are increased, the absorption of the cell piece on light is improved, the reflection is reduced, the short-circuit current is improved, and the photoelectric conversion efficiency of the cell is finally improved. The texture-making effect is mainly related to texture-making temperature, uniformity of liquid medicine concentration and fluidity of the liquid medicine. In this embodiment, it is preferable that the temperature of the texturing is 70-90 ℃ to ensure the fluidity of the chemical solution, and the chemical solution should be supplemented in time, specifically, because the texturing time is long and the ratio of the texturing chemical solution is high, and the long texturing time would dilute the concentration of the chemical solution and affect the ratio of the texturing solution, the chemical solution should be supplemented once after every 200-300 frames of silicon wafers are produced to ensure the consistency and uniformity of the chemical solution concentration, the amount of sodium hydroxide supplemented in each round is 0.5-1.5L, and the amount of additive supplemented is 0.05-0.15L. And cleaning the silicon wafer after texturing in a No. 10 rinsing bath to remove alkaline liquid medicine on the surface of the silicon wafer.
The post-treatment unit comprises a 11# post-cleaning tank and a12 # rinsing tank, liquid medicine placed in the 11# post-cleaning tank is mixed solution of hydrogen peroxide and sodium hydroxide, the solution ratio of the hydrogen peroxide to the sodium hydroxide is 4-7% and 0.2-0.5%, the cleaning temperature is 40-80 ℃, and the cleaning time is 1-5 min. The alkaline solution is used for removing additives and organic matters remained on the surface of the silicon wafer, and then enters a No. 12 rinsing bath to clean the liquid medicine on the surface of the silicon wafer after cleaning is finished, so that the cleanliness of the surface of the silicon wafer is improved. In order to ensure the stability of the concentration of the liquid medicine in the 11# post-cleaning tank, the liquid medicine is supplemented once after every 400-frame silicon chip is produced, and the liquid supplementing amounts of hydrogen peroxide and sodium hydroxide are 0.5-1.5L and 0.05-0.15L respectively in each round.
The second pickling unit comprises a 13# pickling tank and a 14# rinsing tank, wherein a mixed solution of hydrofluoric acid and hydrochloric acid is placed in the 13# pickling tank, the solution ratio of the hydrofluoric acid is 10-15%, and the solution ratio of the hydrochloric acid is 10-15%. Hydrofluoric acid can remove an oxide layer on the surface of the silicon wafer, hydrochloric acid can remove residual metal impurities on the surface of the silicon wafer, and the hydrochloric acid has double functions of acid and a complexing agent, and chloride ions in the hydrochloric acid can dissolve other metal ions stained on the surface of the silicon wafer. In the second acid washing process, acid washing is carried out at normal temperature, the acid washing time is 1-5min, in order to ensure the stability of acid washing liquid medicine in the tank, liquid medicine is supplemented for one time after every 400-frame silicon wafer is produced, the liquid supplementing amount of hydrofluoric acid is 0.3-0.9L in each time, and the liquid supplementing amount of hydrochloric acid is as follows: 0.3-0.9L. The acid washing aims to remove silicon dioxide and metal ions on the surface of the silicon wafer and form a suede with good hydrophobicity. And after acid washing, cleaning the silicon wafer by a No. 14 rinsing bath to remove the liquid medicine on the surface of the silicon wafer.
The drying unit comprises a 15# full pulling groove, a 16# drying groove and a 17# blanking groove, hot water is placed in the 15# full pulling groove, the temperature is 50-90 ℃, preferably 70-90 ℃, the cleaning time is 0.5-3.5min, the purpose is to clean the surface of the silicon wafer, reduce water stains on the surface and facilitate subsequent drying treatment. And (3) fully pulling the silicon wafer, then feeding the silicon wafer into a 16# drying groove, wherein the drying temperature is 60-100 ℃, preferably 70-90 ℃, the drying time is 4-8min, and drying water on the surface of the silicon wafer by using hot air to ensure the cleanliness of the surface of the silicon wafer.
In this example, the 3# rinsing bath, the 5# rinsing bath, the 8# rinsing bath, the 10# rinsing bath, the 12# rinsing bath and the 14# rinsing bath were pure water at normal temperature, and the washing time was 0.5 to 3.5 min.
The utility model discloses a carry out the oxidation with the metallic impurity on silicon chip surface in advance and form the oxide layer that easily gets rid of, carry out the complex to this oxide layer after first pickling again, form a complex that is soluble in water, and then can effectively get rid of the greasy dirt that the subsides applied in this oxide layer, improve silicon chip surface cleanliness factor, for follow-up preparation matte provides good surface foundation, the microstructure that is favorable to silicon chip battery face is more even, silicon chip surface silicon dioxide layer degree of depth after first pickling is 1-2um, completely controllable. Meanwhile, after the first pickling, the pretreatment, the texturing, the post-treatment, the second pickling and the drying are sequentially carried out, a silicon wafer with a single thinning total weight of 0.45-1.45g and a uniform microstructure can be obtained, and the conductivity of the battery is improved by 0.01-0.03%.
The first embodiment is as follows:
the pile-up making process of the laminated cell with the size of 160mm specifically comprises the following steps:
s1: oxidation by oxygen
The silicon chip enters a No. 2 oxidation tank from a No. 1 feeding tank, ozone gas is synchronously introduced, and the liquid medicine of the No. 2 oxidation tank, namely the mixed liquid of 4L of sodium hydroxide and 220L of water, is arranged in advance, the oxidation temperature is 60 ℃, and the oxidation time is 3 min. In the oxidation process, liquid supplement is performed once after each 500 frames of production, 200 silicon wafers are loaded in each basket, and the number of the silicon wafers loaded in each subsequent basket is the same and is not repeated; the amount of ozone to be supplemented was 10L/h, and the amount of sodium hydroxide to be supplemented was 0.1L. And cleaning the oxidized silicon wafer in a 3# rinsing bath for 2 min.
S2: first acid washing
And (3) pickling the silicon wafer in a No. 4 pickling tank from a No. 3 rinsing tank, wherein the liquid medicine in the No. 4 pickling tank is formed by mixing 40L of hydrofluoric acid and 260L of water, and pickling for 3min at normal temperature. In the first acid washing process, liquid supplementing is alternated once after every 500 frames of production, and the liquid supplementing amount of hydrofluoric acid is 0.5L. And washing in a No. 5 water washing tank for 2min after acid washing.
S3: pretreatment of
The silicon wafer enters a No. 6 rough polishing groove from a No. 5 rinsing groove for corrosion, liquid medicine in the No. 6 rough polishing groove is formed by mixing 7L of sodium hydroxide and 220L of water, and rough polishing corrosion is carried out for 3min at the temperature of 80 ℃. In the course of rough polishing, liquid supplement is alternated once after every 500 frames of production, and the liquid supplement amount of sodium hydroxide is 0.5L. Then the mixture enters a 7# pre-cleaning tank for cleaning, and the liquid medicine in the 7# pre-cleaning tank is formed by mixing 4L of sodium hydroxide, 12L of hydrogen peroxide and 220L of water and is cleaned for 2min at the temperature of 60 ℃. In the pre-cleaning process, liquid supplement is performed once after every 500 frames of production, the liquid supplement amount of hydrogen peroxide is 1L, and the liquid supplement amount of sodium hydroxide is 0.1L. And then washing in a No. 8 rinsing bath for 2 min.
S4: texturing method
The silicon wafer enters a No. 9 texturing groove from a No. 8 rinsing groove for texturing, the liquid medicine of the No. 9 texturing groove is formed by mixing 10L of sodium hydroxide, 2L of additive and 230L of water, and the texturing is carried out for 6.5min at the temperature of 80 ℃. In the texturing process, liquid supplement is alternately performed once after each 250 frames of production, the liquid supplement amount of the sodium hydroxide is 0.8L, and the liquid supplement amount of the additive is 0.1L. Then the mixture enters a No. 10 rinsing bath for rinsing for 2 min.
S5: post-treatment
The silicon wafer enters an 11# post-cleaning tank from a 10# rinsing tank for cleaning, liquid medicine in the 11# post-cleaning tank is formed by mixing 12L of hydrogen peroxide, 4L of sodium hydroxide and 220L of water, and the silicon wafer is cleaned for 1.5min at the temperature of 60 ℃. In the post-cleaning process, after every 500 frames of production, liquid supplement is alternated, the liquid supplement amount of hydrogen peroxide is 1L, and the liquid supplement amount of sodium hydroxide is 0.1L. Then the mixture enters a12 # rinsing bath for rinsing for 2 min.
S6: second acid washing
The silicon wafer enters a No. 13 pickling tank from a No. 12 rinsing tank for pickling, and the chemical liquid in the No. 13 pickling tank is formed by mixing 20L of hydrofluoric acid, 20L of hydrochloric acid and 130L of water and is pickled for 3min at normal temperature. In the second acid washing process, liquid supplementing is alternated once after every 500 frames of production, the liquid supplementing amount of hydrofluoric acid is 0.3L, and the liquid supplementing amount of hydrochloric acid is 0.3L. Then the mixture enters a 14# rinsing bath for washing for 2 min.
S7: drying by baking
Cleaning the silicon wafer in a 15# full pulling tank from a 14# rinsing tank at the hot water temperature of 70 ℃ for 2 min; then the mixture enters a No. 16 drying groove for drying, and is dried for 6min at the temperature of 80 ℃; and then enters a No. 17 blanking groove to be discharged.
And (5) inspecting the performance parameters and the appearance of the textured silicon wafer. Testing the weight of the silicon wafer before and after texturing on an electronic balance instrument, and calculating the double-sided thinning weight of the silicon wafer, wherein the electronic balance is FA 124; and the reflectivity of the textured silicon wafer was measured by a D8 reflectivity tester, as follows. As shown in table 1, compared with the standard requirements for the silicon wafer double-sided thinning weight and the center point reflectivity obtained in this embodiment, the silicon wafer double-sided thinning weight of this embodiment one is 0.53g, and the center point reflectivity is: 7.8 percent, all of which are less than the standard requirements. Table 2 shows the comparison of the electrical parameters of the textured silicon wafer of this example with those of the textured silicon wafer of the prior art, which indicates that the conversion efficiency of 160mm silicon wafer made by the texturing process is improved by 0.03% compared with 160mm silicon wafer made by the conventional process. The micro-morphology of the textured silicon wafer under a scanning electron microscope of 3000 times is shown in fig. 2, and it can be seen that a layer of texture which is tiny and uniform in structure and is fully distributed on the whole silicon surface is formed on the surface of the silicon wafer, and the silicon wafer is complete in appearance and free of obvious chromatic aberration, dirt, spots or cracking. The uniform and convex-concave consistent suede can increase the refraction times of light on the surface of the solar cell, is beneficial to the absorption of the solar cell on the light, improves and reduces the reflectivity of the light, improves the short-circuit current and finally improves the photoelectric conversion efficiency of the cell.
Table 1 example a comparison of test results with standard requirements
Table 2 example one comparison with electrical parameters of the prior art
Example two:
the pile-up making process of the laminated cell with the size of 200mm specifically comprises the following steps:
s1: oxidation by oxygen
The silicon chip enters a No. 2 oxidation tank from a No. 1 feeding tank, ozone gas is synchronously introduced, and the liquid medicine of the No. 2 oxidation tank, namely the mixed liquid of 6L of sodium hydroxide and 240L of water, is arranged in advance, the oxidation temperature is 60 ℃, and the oxidation time is 3 min. In the oxidation process, liquid supplement is alternated after every 500 frames of production, the liquid supplement amount of ozone is 15L/h, and the liquid supplement amount of sodium hydroxide is 0.15L. And cleaning the oxidized silicon wafer in a 3# rinsing bath for 2 min.
S2: first acid washing
And (3) pickling the silicon wafer from the No. 3 rinsing bath into the No. 4 pickling bath, wherein the liquid medicine in the No. 4 pickling bath is formed by mixing 50L of hydrofluoric acid and 280L of water, and pickling is carried out for 3min at normal temperature. In the first acid washing process, liquid supplementing is alternated once after every 500 frames of production, and the liquid supplementing amount of hydrofluoric acid is 0.8L. And washing in a No. 5 water washing tank for 2min after acid washing.
S3: pretreatment of
The silicon wafer enters a No. 6 rough polishing groove from a No. 5 rinsing groove for corrosion, liquid medicine in the No. 6 rough polishing groove is formed by mixing 9L of sodium hydroxide and 240L of water, and rough polishing corrosion is carried out for 3min at the temperature of 80 ℃. In the course of rough polishing, liquid supplement is alternated once after every 500 frames of production, and the liquid supplement amount of the sodium hydroxide is 0.8L. Then the mixture enters a 7# pre-cleaning tank for cleaning, and the liquid medicine in the 7# pre-cleaning tank is formed by mixing 6L of sodium hydroxide, 14L of hydrogen peroxide and 240L of water and is cleaned for 2min at the temperature of 60 ℃. In the pre-cleaning process, liquid supplement is performed once after every 500 frames of production, the liquid supplement amount of hydrogen peroxide is 1.5L, and the liquid supplement amount of sodium hydroxide is 0.15L. And then washing in a No. 8 rinsing bath for 2 min.
S4: texturing method
The silicon wafer enters a No. 9 texturing groove from a No. 8 rinsing groove for texturing, the liquid medicine of the No. 9 texturing groove is formed by mixing 12L of sodium hydroxide, 3L of additive and 250L of water, and the texturing is carried out for 6.5min at the temperature of 80 ℃. In the texturing process, liquid supplement is alternately performed once after each 250 frames of production, the liquid supplement amount of the sodium hydroxide is 1.2L, and the liquid supplement amount of the additive is 0.15L. Then the mixture enters a No. 10 rinsing bath for rinsing for 2 min.
S5: post-treatment
The silicon wafer enters an 11# post-cleaning tank from a 10# rinsing tank for cleaning, and the liquid medicine in the 11# post-cleaning tank is formed by mixing 14L of hydrogen peroxide, 6L of sodium hydroxide and 240L of water and is cleaned for 1.5min at the temperature of 60 ℃. In the post-cleaning process, liquid supplement is performed once after every 500 frames of production, the liquid supplement amount of hydrogen peroxide is 1.5L, and the liquid supplement amount of sodium hydroxide is 0.15L. Then the mixture enters a12 # rinsing bath for rinsing for 2 min.
S6: second acid washing
The silicon wafer enters a No. 13 pickling tank from a No. 12 rinsing tank for pickling, and the liquid medicine in the No. 13 pickling tank is formed by mixing 30L of hydrofluoric acid, 30L of hydrochloric acid and 150L of water and is pickled for 3min at normal temperature. In the second acid washing process, liquid supplementing is alternated once after every 500 frames of production, the liquid supplementing amount of hydrofluoric acid is 0.6L, and the liquid supplementing amount of hydrochloric acid is 0.6L. Then the mixture enters a 14# rinsing bath for washing for 2 min.
S7: drying by baking
Cleaning the silicon wafer in a 15# full pulling tank from a 14# rinsing tank at the hot water temperature of 70 ℃ for 2 min; then the mixture enters a No. 16 drying groove for drying, and is dried for 6min at the temperature of 80 ℃; and then enters a No. 17 blanking groove to be discharged.
And (5) inspecting the performance parameters and the appearance of the textured silicon wafer. As shown in table 3, compared with the standard requirements for the silicon wafer double-sided thinning weight and the center point reflectivity obtained in this embodiment, the silicon wafer double-sided thinning weight of this embodiment one is 0.82g, and the center point reflectivity is: 7.8 percent, all of which are less than the standard requirements. Table 4 shows a comparison of the electrical parameters of the textured silicon wafer of this example with those of the textured silicon wafer of the prior art, which indicates that the conversion efficiency of the 200mm silicon wafer made by the texturing process is improved by 0.03% compared with the conversion efficiency of the 200mm silicon wafer made by the conventional process. The micro-morphology of the textured silicon wafer under a scanning electron microscope of 3000 times is shown in fig. 3, and it can be seen that a layer of texture which is tiny in structure, uniform in convex-concave and fully distributed on the whole silicon surface is formed on the surface of the silicon wafer, and the silicon wafer is complete in appearance and free of obvious chromatic aberration, dirt, spots or cracks. In this example, both the performance parameters and the micrographs were acceptable.
Table 3 example two test results vs standard requirements
TABLE 4 comparison of the electrical parameters of example two with those of the prior art
Example three:
the tile-stacked battery texturing process with the size of 260mm specifically comprises the following steps:
s1: oxidation by oxygen
The silicon chip enters a No. 2 oxidation tank from a No. 1 feeding tank, ozone gas is synchronously introduced, the liquid medicine of the No. 2 oxidation tank, namely the mixed liquid of 8L of sodium hydroxide and 260L of water, is arranged in advance, the oxidation temperature is 60 ℃, and the oxidation time is 3 min. In the oxidation process, liquid supplement is alternated after every 500 frames of production, the liquid supplement amount of ozone is 20L/h, and the liquid supplement amount of sodium hydroxide is 0.2L. And cleaning the oxidized silicon wafer in a 3# rinsing bath for 2 min.
S2: first acid washing
And (3) pickling the silicon wafer from the No. 3 rinsing bath into the No. 4 pickling bath, wherein the liquid medicine in the No. 4 pickling bath is formed by mixing 70L of hydrofluoric acid and 300L of water, and pickling for 3min at normal temperature. In the first acid washing process, liquid supplementing is alternated once after every 500 frames of production, and the liquid supplementing amount of hydrofluoric acid is 1.2L. And washing in a No. 5 water washing tank for 2min after acid washing.
S3: pretreatment of
The silicon wafer enters a No. 6 rough polishing groove from a No. 5 rinsing groove for corrosion, liquid medicine in the No. 6 rough polishing groove is formed by mixing 12L of sodium hydroxide and 260L of water, and rough polishing corrosion is carried out for 3min at the temperature of 80 ℃. In the course of rough polishing, liquid supplement is alternated once after every 500 frames of production, and the liquid supplement amount of sodium hydroxide is 1.2L. Then the mixture enters a 7# pre-cleaning tank for cleaning, and the liquid medicine in the 7# pre-cleaning tank is formed by mixing 8L of sodium hydroxide, 16L of hydrogen peroxide and 260L of water and is cleaned for 2min at the temperature of 60 ℃. In the pre-cleaning process, liquid supplement is performed once after every 500 frames of production, the liquid supplement amount of hydrogen peroxide is 2L, and the liquid supplement amount of sodium hydroxide is 0.2L. And then washing in a No. 8 rinsing bath for 2 min.
S4: texturing method
The silicon wafer enters a No. 9 texturing groove from a No. 8 rinsing groove for texturing, the liquid medicine of the No. 9 texturing groove is formed by mixing 14L of sodium hydroxide, 4L of additive and 270L of water, and the texturing is carried out for 6.5min at the temperature of 80 ℃. In the texturing process, liquid supplement is alternately performed once after each 250 frames of production, the liquid supplement amount of the sodium hydroxide is 1.8L, and the liquid supplement amount of the additive is 0.2L. Then the mixture enters a No. 10 rinsing bath for rinsing for 2 min.
S5: post-treatment
The silicon wafer enters an 11# post-cleaning tank from a 10# rinsing tank for cleaning, liquid medicine in the 11# post-cleaning tank is formed by mixing 16L of hydrogen peroxide, 8L of sodium hydroxide and 260L of water, and the silicon wafer is cleaned for 1.5min at the temperature of 60 ℃. In the post-cleaning process, after 500 frames of production, liquid supplement is performed alternately, the liquid supplement amount of hydrogen peroxide is 2L, and the liquid supplement amount of sodium hydroxide is 0.2L. Then the mixture enters a12 # rinsing bath for rinsing for 2 min.
S6: second acid washing
The silicon wafer enters a No. 13 pickling tank from a No. 12 rinsing tank for pickling, and the liquid medicine in the No. 13 pickling tank is formed by mixing 40L of hydrofluoric acid, 40L of hydrochloric acid and 180L of water and is pickled for 3min at normal temperature. In the second acid washing process, liquid supplementing is alternated after every 500 frames of production, the liquid supplementing amount of hydrofluoric acid is 0.9L, and the liquid supplementing amount of hydrochloric acid is 0.9L. Then the mixture enters a 14# rinsing bath for washing for 2 min.
S7: drying by baking
Cleaning the silicon wafer in a 15# full pulling tank from a 14# rinsing tank at the hot water temperature of 70 ℃ for 2 min; then the mixture enters a No. 16 drying groove for drying, and is dried for 6min at the temperature of 80 ℃; and then enters a No. 17 blanking groove to be discharged.
And (5) inspecting the performance parameters and the appearance of the textured silicon wafer. As shown in table 5, compared with the standard requirements for the silicon wafer double-sided thinning weight and the center point reflectivity obtained in this embodiment, the silicon wafer double-sided thinning weight of this embodiment one is 1.39g, and the center point reflectivity is: 7.8 percent, all of which are less than the standard requirements. Table 6 shows a comparison of the electrical parameters of the textured silicon wafer of this example with those of the textured silicon wafer of the prior art, which indicates that the conversion efficiency of the 260mm silicon wafer made by the texturing process is improved by 0.03% compared to the 260mm silicon wafer made by the texturing process. The micro-morphology of the textured silicon wafer under a scanning electron microscope of 3000 times is shown in fig. 4, and it can be seen that a layer of texture which is tiny in structure, uniform in convex-concave and fully distributed on the whole silicon surface is formed on the surface of the silicon wafer, and the silicon wafer is complete in appearance and free of obvious chromatic aberration, dirt, spots or cracks. In this example, both the performance parameters and the micrographs were acceptable.
Table 5 example three test results compare to standard requirements
TABLE 6 comparison of the third example with the electrical parameters of the prior art
The utility model has the advantages and positive effects that:
1. adopt the utility model discloses a texturing equipment, be applicable to especially that the size is 160 supplyes the texturing of the square silicon chip of 260mm, carry out the oxidation through the metallic impurity with the silicon chip surface in advance and form the oxide layer that easily gets rid of, carry out the complex to this oxide layer after first pickling again, form a complex that can be dissolved in water, and then can effectively get rid of the greasy dirt that pastes and apply in this oxide layer, improve silicon chip surface cleanliness factor, provide good surface foundation for follow-up preparation matte, the microstructure that is favorable to silicon chip battery face is more even, silicon chip surface silicon dioxide depth of layer after first pickling is the single face attenuate degree of depth and is 1-2um, it is completely controllable.
2. The pretreatment comprises rough polishing treatment and pre-cleaning treatment, wherein the rough polishing treatment aims at removing a cutting damage layer on the surface of the silicon wafer, and a flat surface is formed after thinning, so that the subsequent preparation of a suede surface is facilitated; the pre-cleaning is to remove residual metal ions and organic matters on the surface of the silicon wafer. The texture surface is a pyramid-shaped texture surface which is tiny, uniform and is fully distributed on the whole silicon surface. Carrying out post-treatment, secondary acid washing and drying on the silicon wafer after texturing in sequence, wherein the post-treatment is to remove additives and organic matters remained on the surface of the silicon wafer; the second acid washing is to remove silicon dioxide and metal ions marked on the silicon wafer to form a suede with good hydrophobicity; the drying comprises the steps that hot water fills the pulling groove and the drying groove, and the residual liquid of the silicon wafer is cleaned by the hot water, so that the water stain on the surface of the silicon wafer is reduced, and the subsequent drying is facilitated; the drying groove is used for drying water marks on the surface of the silicon wafer by hot air; and the dried silicon wafer is discharged from the discharging groove, and finally, the silicon wafer with the single thinning total weight of 0.45-1.45g and the uniform microstructure is obtained, so that the conductivity of the battery is improved by 0.01-0.03%.
3. The washing tanks are arranged after oxidation, primary acid washing, pretreatment, texturing, post-treatment and secondary acid washing, so that the liquid medicine on the surface layer of the silicon wafer can be removed, and meanwhile, the residual organic solvent and metal ions on the surface of the silicon wafer can be removed, thereby being beneficial to removing the residual metal impurities on the surface of the silicon wafer, improving the surface cleanliness of the silicon wafer and further improving the electrical property of the battery.
The embodiments of the present invention have been described in detail, and the description is only for the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (10)
1. The large-size laminated tile battery texturing equipment is characterized by comprising an oxidation unit and a first pickling unit before a texturing unit, wherein a discharge hole of the oxidation unit is connected with a feeding hole of the first pickling unit, and the first pickling unit is arranged close to the texturing unit; and the oxidation unit and the first pickling unit are both provided with rinsing baths.
2. The large-size laminated cell texturing apparatus according to claim 1, wherein the oxidation unit further comprises a loading trough and an oxidation trough, the oxidation trough is located between the loading trough and the rinsing trough, and the rinsing trough is disposed adjacent to the first pickling unit.
3. The large-size laminated cell etching apparatus according to claim 2, wherein the first pickling unit further comprises a first pickling tank, and the first pickling tank is disposed adjacent to the oxidation tank.
4. A large-size laminated cell texturing apparatus according to any one of claims 1 to 3, wherein a pretreatment unit is further provided before the texturing unit, the pretreatment unit being located after the first pickling unit.
5. The large-sized laminated cell texturing apparatus according to claim 4, wherein the pretreatment unit comprises a rough polishing tank and a pre-cleaning tank, the rough polishing tank is disposed close to the first acid cleaning unit, and the pre-cleaning tank is disposed far from the first acid cleaning unit.
6. The large-size laminated cell texturing apparatus according to claim 5, wherein the texturing unit comprises a texturing groove, and the texturing groove is disposed adjacent to the pretreatment unit.
7. The large-size laminated cell texturing apparatus according to claim 6, further comprising a post-treatment unit, a secondary pickling unit and a drying unit, wherein the post-treatment unit, the secondary pickling unit and the drying unit are sequentially located after the texturing unit.
8. The large-size laminated cell texturing apparatus according to claim 7, wherein said post-processing unit comprises a post-cleaning tank, and said second acid cleaning unit comprises a second acid cleaning tank.
9. The large-size laminated tile battery texturing apparatus according to claim 8, wherein the rinsing bath is provided after the pre-cleaning bath, the texturing bath, the post-cleaning bath and the second pickling bath.
10. The large-sized laminated tile battery texturing apparatus according to claim 9, wherein the drying unit comprises a full-lift groove, a drying groove and a discharging groove in sequence, and the full-lift groove is disposed adjacent to the secondary pickling unit.
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| CN201921371476.0U CN210325830U (en) | 2019-08-22 | 2019-08-22 | Large-size laminated tile battery texturing equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491971A (en) * | 2019-08-22 | 2019-11-22 | 东方环晟光伏（江苏）有限公司 | A kind of large scale imbrication battery process for etching |
| CN111403561A (en) * | 2020-04-24 | 2020-07-10 | 中威新能源(成都)有限公司 | Silicon wafer texturing method |
| CN111969078A (en) * | 2020-08-04 | 2020-11-20 | 东莞南玻光伏科技有限公司 | Texturing method of monocrystalline silicon wafer, monocrystalline silicon solar cell and preparation method of monocrystalline silicon solar cell |
| CN112713103A (en) * | 2021-03-29 | 2021-04-27 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491971A (en) * | 2019-08-22 | 2019-11-22 | 东方环晟光伏（江苏）有限公司 | A kind of large scale imbrication battery process for etching |
| CN110491971B (en) * | 2019-08-22 | 2024-05-31 | 环晟光伏(江苏)有限公司 | Large-size stacked tile battery texturing process |
| CN111403561A (en) * | 2020-04-24 | 2020-07-10 | 中威新能源(成都)有限公司 | Silicon wafer texturing method |
| CN111969078A (en) * | 2020-08-04 | 2020-11-20 | 东莞南玻光伏科技有限公司 | Texturing method of monocrystalline silicon wafer, monocrystalline silicon solar cell and preparation method of monocrystalline silicon solar cell |
| CN112713103A (en) * | 2021-03-29 | 2021-04-27 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
| CN112713103B (en) * | 2021-03-29 | 2021-06-25 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
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