CN115274425A - Method for improving vacuum adsorption degree abnormity of silicon wafer - Google Patents
Method for improving vacuum adsorption degree abnormity of silicon wafer Download PDFInfo
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- CN115274425A CN115274425A CN202210830974.7A CN202210830974A CN115274425A CN 115274425 A CN115274425 A CN 115274425A CN 202210830974 A CN202210830974 A CN 202210830974A CN 115274425 A CN115274425 A CN 115274425A
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- corrosion process
- silicon wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
The invention discloses a method for improving vacuum adsorption degree abnormity of a silicon wafer, which uses a mixed corrosion process, wherein the mixed corrosion process comprises an acid corrosion process and an alkali corrosion process, the acid corrosion process utilizes mixed acid to perform chemical reaction with the surface layer of the silicon wafer, and glacial acetic acid exists as a slow release agent and does not participate in the chemical reaction; the total reaction is as follows: 3Si +4HNO3+18HF→3H2[SiF6]+4NO ≈; wherein, the silicon chip alkaline corrosion utilizes KOH corrosive, through chemical reaction, gets rid of the damage layer that the silicon chip caused because of double-sided lapping, and the principle is that KOH solution and silicon chip top layer take place chemical reaction: si +2KOH +2=K2SiO3+2H2×) @. The invention combines the advantages of acid corrosion and alkali corrosion, and changes the roughness and glossiness of the silicon wafer by using a mixed corrosion process to match the vacuum adsorption degree of different silicon wafer processing equipment.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for improving vacuum adsorption degree abnormity of a silicon wafer.
Background
After the silicon wafer is mechanically ground, a chemical liquid and the silicon wafer are subjected to chemical reaction, and a mechanical grinding damage layer is removed through chemical thinning.
Disclosure of Invention
The invention provides a method for improving vacuum adsorption degree abnormity of a silicon wafer.
A method for improving vacuum adsorption degree abnormity of a silicon chip uses a mixed corrosion process, and the mixed corrosion process comprises an acid corrosion process and an alkali corrosion process;
wherein the acid etching process utilizes mixed acid (HF, HNO)3,CH3COOH) chemically reacts with the surface layer of the silicon wafer, wherein glacial acetic acid (CH)3COOH) exists as a slow release agent and does not participate in chemical reactions;
silicon quilt HNO3And (3) oxidizing, wherein the reaction is as follows: 3Si +4HNo3→3
SiO removal with HF2Layer, the reaction is:
the total reaction is as follows: 3Si+4HNO3+18HF→3H2[SiF6]_D
Wherein, the silicon chip alkaline corrosion utilizes KOH corrosive, through chemical reaction, gets rid of the damage layer that the silicon chip caused because of double-sided lapping, and the principle is that KOH solution and silicon chip top layer take place chemical reaction:
Si+2KOH+2K2Sio3+2H2↑。
preferably, the sequence of the mixed etching process is to perform an acid etching process first and then perform an alkali etching process.
Preferably, the sequence of the mixed etching process is that the alkali etching process is performed first, and then the acid etching process is performed.
Compared with the prior art, the invention has the beneficial effects that: and by combining the respective advantages of acid corrosion and alkali corrosion, the roughness and the glossiness of the silicon wafer are changed by using a mixed corrosion process (acid first and alkali second/alkali first and acid second) so as to match the vacuum adsorption degrees of different silicon wafer processing equipment.
Drawings
FIG. 1 is a diagram illustrating the effects of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below.
A method for improving vacuum adsorption degree abnormity of a silicon wafer uses a mixed corrosion process, wherein the mixed corrosion process is divided into an acid corrosion process and an alkali corrosion process, the mixed corrosion process is divided into two types in sequence, one type is to firstly carry out the acid corrosion process and then carry out the alkali corrosion process, and the other type is to firstly carry out the alkali corrosion process and then carry out the acid corrosion process.
Wherein, the main principle of the acid etching process is to use mixed acid (HF, HNO)3,CH3COOH) and the surface layer of the silicon chip, thereby achieving the purpose of removing the damaged layer and the metal (mainly iron ions) on the surface of the silicon chip. Wherein glacial acetic acid (CH)3COOH) is present as a slow-release agent and does not participate in chemical reactions.
Silicon quilt HNO3And (3) oxidizing, wherein the reaction is as follows: 3Si +4HNO3→3
SiO removal with HF2Layer, the reaction is:
the total reaction is as follows: 3Si +4HNO3+18HF→3H2[SiF6]_D
Wherein, silicon wafer alkali corrosion: the damaged layer of the silicon wafer caused by double-sided grinding is removed by using a KOH corrosive agent through chemical reaction, and the surface and geometric parameters of the silicon wafer meet the standard requirements. The main principle is that KOH solution and the surface layer of a silicon wafer are subjected to chemical reaction:
Si+2KOH+2K2SiO3+2H2↑。
the effect of the hybrid etching process of the present invention is shown in fig. 1.
The invention combines the advantages of acid corrosion and alkali corrosion, and changes the roughness and the glossiness of the silicon wafer by using a mixed corrosion process (acid first and alkali second/alkali first and acid second) to match the vacuum adsorption degree of different silicon wafer processing equipment.
While there have been shown and described what are at present considered the fundamental principles and essential features of the invention and its advantages, it will be apparent to those skilled in the art that the invention is not limited to the details of the foregoing exemplary embodiments, but is capable of other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment includes only a single embodiment, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the embodiments may be appropriately combined to form other embodiments understood by those skilled in the art.
Claims (3)
1. A method for improving vacuum adsorption degree abnormity of a silicon wafer is characterized by comprising the following steps: uses a mixed corrosion process which is divided into an acid corrosion process and an alkali corrosion process,
wherein the acid etching process utilizes mixed acid (HF, HNO)3,CH3COOH) chemically reacts with the surface layer of the silicon wafer, wherein glacial acetic acid (CH)3COOH) exists as a slow release agent and does not participate in chemical reaction;
silicon quilt HNO3And (3) oxidizing, wherein the reaction is as follows: 3Si +4HNO3→3
SiO removal with HF2Layer, the reaction is:
the total reaction is as follows: 3Si +4HNO3+18HF→3H2[SiF6]+4NO↑；
Wherein, the silicon chip alkaline corrosion utilizes KOH corrosive, through chemical reaction, gets rid of the damage layer that the silicon chip caused because of double-sided lapping, and the principle is that KOH solution and silicon chip top layer take place chemical reaction:
Si+2KOH+2＝K2SiO3+2H2↑。
2. the method for improving the vacuum adsorption degree abnormity of the silicon wafer according to claim 1, wherein the method comprises the following steps: the sequence of the mixed corrosion process is that an acid corrosion process is carried out first, and then an alkali corrosion process is carried out.
3. The method for improving the vacuum adsorption degree abnormity of the silicon wafer according to claim 1, wherein the method comprises the following steps: the sequence of the mixed corrosion process is that firstly, the alkali corrosion process is carried out, and then the acid corrosion process is carried out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210830974.7A CN115274425A (en) | 2022-07-14 | 2022-07-14 | Method for improving vacuum adsorption degree abnormity of silicon wafer |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210830974.7A CN115274425A (en) | 2022-07-14 | 2022-07-14 | Method for improving vacuum adsorption degree abnormity of silicon wafer |
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| CN202210830974.7A Pending CN115274425A (en) | 2022-07-14 | 2022-07-14 | Method for improving vacuum adsorption degree abnormity of silicon wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116403894A (en) * | 2023-05-10 | 2023-07-07 | 重庆臻宝科技股份有限公司 | Alkaline etching method for monocrystalline silicon |
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2022
- 2022-07-14 CN CN202210830974.7A patent/CN115274425A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116403894A (en) * | 2023-05-10 | 2023-07-07 | 重庆臻宝科技股份有限公司 | Alkaline etching method for monocrystalline silicon |
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