CN109913222A - A kind of silicon wafer polishing liquid - Google Patents
A kind of silicon wafer polishing liquid Download PDFInfo
- Publication number
- CN109913222A CN109913222A CN201910123412.7A CN201910123412A CN109913222A CN 109913222 A CN109913222 A CN 109913222A CN 201910123412 A CN201910123412 A CN 201910123412A CN 109913222 A CN109913222 A CN 109913222A
- Authority
- CN
- China
- Prior art keywords
- polishing liquid
- ammonium
- silicon wafer
- acid
- mass fraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of silicon wafer polishing liquid.The silicon wafer polishing liquid is mainly used for wafer thinning, so that it is removed certain thickness and still maintains good surface quality.The polishing liquid is made of hydrofluoric acid, nitric acid, sulfuric acid, ammonium salt and ultrapure water.The etch temperature control of polishing liquid is 28 ~ 32 DEG C, preferably 30 DEG C.Using stirring technique, stirring rate control to 300 ~ 350 r/min, preferably 330 r/min, to reduce the HNO of local reaction generation2Active material and reaction heat prevent local reaction linear velocity from increasing, and cause corrosion uneven.Silicon chip surface quality is an important index, how much its roughness size and defect will affect the polishing subsequent processing of silicon wafer, the surface damage layer and micro-crack area that front end is generated by mechanical lapping can be removed by carrying out chemical attack to silicon wafer using the polishing liquid, to obtain the surface that roughness is low, defect is few.
Description
Technical field
The invention belongs to wet electronic chemical product and wafers to manufacture interleaving techniques field, and in particular to a kind of silicon wafer polishing liquid and
It uses technique.
Background technique
Semiconductor crystal wafer manufacture in, due to back-end chip manufacture in some special procedures, need to silicon chip surface into
Grinding process within 10 microns of row, while surface will have extraordinary roughness and flatness, and lack to the lattice on surface
Sunken requirement is also very high.And for the mode that mechanical lapping is thinned, silicon face has the mechanical damages such as scratch.Traditional acid corrosion
Liquid, since the autocatalytic cleavage of acid solution keeps its etch-rate too fast, it is difficult to which control is being applied to industrial metaplasia within 10 microns
It produces in real process, in order to obtain stable etch-rate, technical staff needs to utilize the attached dresses such as cooling device, circulator
It sets to control reaction, which again increases process costs.And wafer reducer, although the need of client can be met in removal amount
It asks, but due in traditional HF-HNO3The biggish liquid of the viscosity such as sulfuric acid or phosphoric acid be joined in system to control etching
Rate is too fast, and the gaseous product of reaction is but difficult to be diffused into solution, and can be attached to silicon chip surface for a period of time, makes in this way
Must corrode cannot occur in the masking position of bubble, cause etching uneven.Therefore professional quarters have to use rotary spray instead
Product is thrown out using high-speed rotating centrifugal force, disengages it from silicon chip surface, which substantially increases production costs by technique.
Therefore a kind of controllable-rate is configured, the surface of smooth uniform low defect just can be obtained under the conditions of stirring soaking technology
Polishing liquid it is imperative.This will greatly reduce the cost of wafer manufacture, facilitate the development for pushing IC industry.
Summary of the invention
The present invention is directed to the deficiency of chemical corrosion liquid and wafer reducer in the manufacture of existing wafer, and the first purpose is to provide
A kind of silicon wafer is polished liquid.
The second purpose of the present invention is to provide a kind of use techniques of silicon wafer polishing liquid.
For achieving the above object, the technical solution adopted by the present invention are as follows:
Wherein, the silicon wafer polishing liquid is made of hydrofluoric acid, nitric acid, sulfuric acid, ammonium salt and ultrapure water.
The hydrofluoric acid is electronic-stage hydrofluoric acid, mass concentration 45-52%；
The nitric acid is electronic grade nitric acid, mass concentration 65-72%；
The sulfuric acid is the electron level concentrated sulfuric acid, and mass concentration is 97%~98%；
The ammonium salt is excellent pure grade, and content >=99.95%, wherein the mass concentration of ammonium fluoride is 35-42%；
The water is the ultrapure water that resistivity is 17-18M Ω cm at 25 DEG C.
Its preferred embodiment are as follows:
The hydrofluoric acid is electronic-stage hydrofluoric acid, and concentration is about 50%；
The nitric acid is electronic grade nitric acid, and concentration is about 70%；
The sulfuric acid is the electron level concentrated sulfuric acid, and concentration is about 97%~98%；
The ammonium salt is excellent pure grade, and content >=99.95%, wherein the concentration of ammonium fluoride is 40%.
The water is the ultrapure water of resistivity 18M Ω cm (25 DEG C).
The mass fraction of hydrofluoric acid is 1%~3% in the polishing liquid；The mass fraction of nitric acid is 5%~10%；Sulphur
The mass fraction of acid is 60%~80%；The mass fraction of ammonium salt is 1%-10%；The mass fraction of deionized water is surplus.
Ammonium salt in the polishing liquid include ammonium fluoride, ammonium chloride, ammonium sulfate, ammonium hydrogen sulfate, ammonium nitrate, in ammonium acetate
At least one.And preferred fluorinated ammonium, ammonium sulfate, ammonium hydrogen sulfate.
The ammonium salt provides ammonium ion to solution, and the ammonium nitrate generated in conjunction with nitrate anion is under strong acidic environment
Easily decomposes generation nitrous oxide (N2O) gas, NH4NO3→N2O↑+2H2O.A large amount of gas plays during rise
Stirring action.Gas Stirring promotes bubble to exchange rapidly between silicon chip surface and solution, avoids the masking effect of bubble, and
It accelerates reaction product and localized heat is spread into solution, while with a large amount of introducings of bubble, increasing the mass transfer of hydrofluoric acid
Resistance is conducive to the formation of etch pit structure, obtains more smooth uniform surface.
The polishing liquid is 28~32 DEG C, preferably 30 DEG C using the etch temperature control of technique.
The polishing liquid uses stirring technique, stirring rate control to 300~350r/ using the corrosion process of technique
Min, preferably 330r/min, to reduce the HNO of local reaction generation2Active material and reaction heat prevent local reaction linear velocity
Increase, causes corrosion uneven.
Wherein, polishing liquid is contained with the etching groove of PFA material, the temperature setting of heating sensor is 30 DEG C, and setting is stirred
Mixing rate is 300~350r/min.Then silicon wafer horizontal is put into solution and reacts 2-3min.Silicon wafer after reaction is put
Enter in the container containing a large amount of deionized waters, rinses, drying.
Beneficial effects of the present invention
The advantages and beneficial effects of the present invention are: in the present invention, by introducing ammonium salt, to solution provide ammonium root from
Son, the ammonium nitrate generated in conjunction with nitrate anion easily decomposes generation nitrous oxide (N under strong acidic environment2O) gas, gas
Stirring promotes bubble to exchange rapidly between silicon chip surface and solution, avoids the masking effect of bubble, and accelerate reaction product
It is spread with localized heat into solution, while with a large amount of introducings of bubble, increasing the mass transfer resistance of hydrofluoric acid, being conducive to etch pit
The formation of structure obtains more smooth uniform surface.Manufacturing cost has also been taken into account simultaneously, has optimized using technique, is obtaining
While stable etch-rate and optimal etching surface, cost has been saved for the replacement of technique.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to comparative example, reality
It applies example or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description
It is some comparative examples and embodiment of the invention, for those of ordinary skill in the art, what is do not made the creative labor
Under the premise of, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the wafer topography that embodiment 2 carries out that silicon etching experiment obtains.
Fig. 2 is the wafer topography that comparative example 1 carries out that silicon etching experiment obtains.
Specific embodiment
For a better understanding of the present invention, the present invention is done below with reference to chart and embodiment and is further described in detail,
But the scope of protection of present invention is not limited by the following examples.
Embodiment 1
Present embodiments provide a kind of silicon wafer polishing liquid and its using technique, specifically:
The hydrofluoric acid used is that mass fraction is 50%, and nitric acid is that mass fraction is 70%, and sulfuric acid is that mass fraction is
97.5%, ammonium salt is the ammonium fluoride that mass fraction is 40%, and water is the ultrapure water of resistivity 18M Ω cm (25 DEG C).
Using above-mentioned raw materials prepare 200g silicon polish liquid, by weight content prepare 14.3% water, 75.8% sulfuric acid,
7.3% nitric acid, 1.6% hydrofluoric acid, the mixed solution of 1% ammonium fluoride.
Using following processing step:
1) the above-mentioned silicon polishing liquid prepared is first poured into etching groove；
2) temperature setting of heating sensor is 30 DEG C；
3) stirring rate is set as 330r/min；
4) then silicon wafer horizontal is put into solution and reacts 2min, detect polishing liquid not with infrared radiation thermometer in reaction process
With the local temperature of position, etch temperature maintains 30~31 DEG C；
5) in etching process, a large amount of white minute bubbles is generated after reacting 5s, are constantly expanded from silicon chip surface into solution
Scatter, and due to the effect of buoyancy, risen to liquid level rapidly, will not staticaccelerator adsorption in silicon chip surface, keep dynamic equilibrium, bubble
Diameter be 0.8~1mm；
6) silicon wafer after reaction is put into the container containing a large amount of deionized waters, is rinsed, drying, silicon chip surface exquisiteness
It is smooth, without white bubble impression；
7) its etch-rate and etching surface roughness are detected, and the result that will test is reported in Table 1 below.
Embodiment 2
Present embodiments provide a kind of silicon wafer polishing liquid and its using technique, specifically:
The hydrofluoric acid used is that mass fraction is 50%, and nitric acid is that mass fraction is 70%, and sulfuric acid is that mass fraction is
97.5%, ammonium salt is the ammonium sulfate that mass fraction is 99.95%, and water is the ultrapure water of resistivity 18M Ω cm (25 DEG C).
Using above-mentioned raw materials prepare 200g silicon polish liquid, by weight content prepare 11% water, 73.4% sulfuric acid,
7.1% nitric acid, 1.5% hydrofluoric acid, the mixed solution of 7% ammonium sulfate.
Using following processing step:
1) the above-mentioned silicon polishing liquid prepared is first poured into etching groove；
2) temperature setting of heating sensor is 30 DEG C；
3) stirring rate is set as 330r/min；
4) then silicon wafer horizontal is put into solution and reacts 2min, detect polishing liquid not with infrared radiation thermometer in reaction process
With the local temperature of position, etch temperature maintains 30~30.5 DEG C；
5) in etching process, reaction initially generates a large amount of white minute bubbles, from silicon chip surface constantly to solution
In spread apart, and due to the effect of buoyancy, risen to liquid level rapidly, will not staticaccelerator adsorption in silicon chip surface, keep dynamic equilibrium,
The diameter of bubble is 0.8~1mm；
6) silicon wafer after reaction is put into the container containing a large amount of deionized waters, is rinsed, drying, silicon chip surface exquisiteness
It is smooth, without white bubble impression, as shown in Figure 1；
7) its etch-rate and etching surface roughness are detected, and the result that will test is reported in Table 1 below.
Embodiment 3
Present embodiments provide a kind of silicon wafer polishing liquid and its using technique, specifically:
The hydrofluoric acid used is that mass fraction is 50%, and nitric acid is that mass fraction is 70%, and sulfuric acid is that mass fraction is
97.5%, ammonium salt is that mass fraction is 99.95% ammonium sulfate and 40% ammonium fluoride, and water is resistivity 18M Ω cm (25
DEG C) ultrapure water.
Using above-mentioned raw materials prepare 200g silicon polish liquid, by weight content prepare 12.1% water, 72.2% sulfuric acid,
7.2% nitric acid, 1.5% hydrofluoric acid, 1.5% ammonium fluoride, the mixed solution of 5.5% ammonium sulfate.Using following technique
Step:
1) the above-mentioned silicon polishing liquid prepared is first poured into etching groove；
2) temperature setting of heating sensor is 30 DEG C；
3) stirring rate is set as 330r/min；
4) then silicon wafer horizontal is put into solution and reacts 2min, detect polishing liquid not with infrared radiation thermometer in reaction process
With the local temperature of position, etch temperature maintains 30~30.5 DEG C；
5) in etching process, reaction initially generates a large amount of white minute bubbles, from silicon chip surface constantly to solution
In spread apart, and due to the effect of buoyancy, risen to liquid level rapidly, will not staticaccelerator adsorption in silicon chip surface, keep dynamic equilibrium,
The diameter of bubble is 0.8~1mm；
6) silicon wafer after reaction is put into the container containing a large amount of deionized waters, is rinsed, drying, silicon chip surface exquisiteness
It is smooth, without white bubble impression；
7) its etch-rate and etching surface roughness are detected, and the result that will test is reported in Table 1 below.
Comparative example 1:
The silicon polishing liquid that comparative example 1 provides no ammonium salt component uses technique with corresponding, specifically:
The hydrofluoric acid used is that mass fraction is 50%, and nitric acid is that mass fraction is 70%, and sulfuric acid is that mass fraction is
97.2%, water is the ultrapure water of resistivity 18M Ω cm (25 DEG C).
Using above-mentioned raw materials prepare 200g silicon polish liquid, by weight content prepare 15.2% water, 75% sulfuric acid,
7.8% nitric acid, the mixed solution of 2% hydrofluoric acid.
Using following processing step:
1) the above-mentioned silicon polishing liquid prepared is first poured into etching groove；
2) temperature setting of heating sensor is 30 DEG C；
3) stirring rate is set as 330r/min；
4) then silicon wafer horizontal is put into solution and reacts 2min, detect polishing liquid not with infrared radiation thermometer in reaction process
With the local temperature of position, maximum temperature is etched up to 35 DEG C；
5) in etching process, after reacting 10s, start to generate biggish white bubble and be attached to silicon chip surface, etch 20s
Afterwards, bubble is covered with entire silicon wafer, and bubble is almost stationary, and the diameter of bubble is 4~5mm；
6) silicon wafer after reaction is put into the container containing a large amount of deionized waters, is rinsed, drying, silicon chip surface occurs
Macroscopic white bubble impression, as shown in Figure 2；
7) its etch-rate and etching surface roughness are detected, and the result that will test is reported in Table 1 below.
Comparative example 2:
Comparative example 2, which provides, uses silicon polishing liquid and its etch effect under condition of different temperatures, specifically:
The hydrofluoric acid used is that mass fraction is 50%, and nitric acid is that mass fraction is 70%, and sulfuric acid is that mass fraction is
97.5%, ammonium salt is the ammonium sulfate that mass fraction is 99.95%, and water is the ultrapure water of resistivity 18M Ω cm (25 DEG C).
Using above-mentioned raw materials prepare 200g silicon polish liquid, by weight content prepare 11% water, 73.4% sulfuric acid,
7.1% nitric acid, 1.5% hydrofluoric acid, the mixed solution of 7% ammonium sulfate.
Using following processing step:
1) the above-mentioned silicon polishing liquid prepared is first poured into etching groove；
2) temperature setting of heating sensor is 45 DEG C；
3) stirring rate is set as 330r/min；
4) then silicon wafer horizontal is put into solution and reacts 2min, detect polishing liquid not with infrared radiation thermometer in reaction process
With the local temperature of position, maximum temperature is etched up to 48 DEG C；
5) in etching process, reaction initially generates a large amount of white minute bubbles, from silicon chip surface constantly to solution
In spread apart, and due to the effect of buoyancy, risen to liquid level rapidly, will not staticaccelerator adsorption in silicon chip surface, keep dynamic equilibrium,
The diameter of bubble is 1~2mm；
6) silicon wafer after reaction is put into the container containing a large amount of deionized waters, is rinsed, drying, silicon chip surface does not have
White bubble impression；
7) its etch-rate and etching surface roughness are detected, and the result that will test is reported in Table 1 below.
Comparative example 3:
Comparative example 3, which provides, uses silicon polishing liquid and its etch effect under stopping stirring, specifically:
The hydrofluoric acid used is that mass fraction is 50%, and nitric acid is that mass fraction is 70%, and sulfuric acid is that mass fraction is
97.5%, ammonium salt is the ammonium sulfate that mass fraction is 99.95%, and water is the ultrapure water of resistivity 18M Ω cm (25 DEG C).
Using above-mentioned raw materials prepare 200g silicon polish liquid, by weight content prepare 11% water, 73.4% sulfuric acid,
7.1% nitric acid, 1.5% hydrofluoric acid, the mixed solution of 7% ammonium sulfate.
Using following processing step:
1) the above-mentioned silicon polishing liquid prepared is first poured into etching groove；
2) temperature setting of heating sensor is 30 DEG C；
3) stirring rate is set as 0r/min；
4) then silicon wafer horizontal is put into solution and reacts 2min, detect polishing liquid not with infrared radiation thermometer in reaction process
With the local temperature of position, local maximum temperature is up to 33 DEG C；
5) in etching process, a large amount of white minute bubbles is generated after reacting 8s, are slowly expanded from silicon chip surface into solution
Scatter, and risen to liquid level, will not staticaccelerator adsorption in silicon chip surface, keep dynamic equilibrium, the diameter of bubble is 0.8~1mm；
6) silicon wafer after reaction is put into the container containing a large amount of deionized waters, is rinsed, drying, silicon chip surface part
There is a small amount of white bubble impression in place；
7) its etch-rate and etching surface roughness are detected, and the result that will test is reported in Table 1 below.
Comparative example 4:
The roughness of silicon chip surface before detection etches, and the result that will test is reported in Table 1 below.
By the comparison of experimental data in table 1 it can be concluded that, embodiment 1, embodiment 2, embodiment 3, due to joined this
The ammonium salt component of invention, surface roughness can maintain stable etching compared with significantly reducing for comparative example 1 and comparative example 4
Rate.Wherein, comparative example 2 and comparative example 2, comparative example 3 have advanced optimized the optimal use technique of the polishing liquid, for this
The industrial application of polishing liquid provides technical support.
Obviously, above-described embodiment is only intended to clearly illustrate made example, and is not the limitation to embodiment.For
For those of ordinary skill in the art, other various forms of variations or change can also be made on the basis of the above description
It is dynamic.There is no necessity and possibility to exhaust all the enbodiments.And the obvious changes or variations therefore amplified
Within the protection scope of the invention.
1 embodiment 1 to 3 of table and comparative example 1 to 4 carry out the experimental result that silicon etching experiment measures.
Claims (3)
- The liquid 1. a kind of silicon wafer is polished, it is characterised in that: the silicon wafer polishing liquid is by hydrofluoric acid, nitric acid, sulfuric acid, ammoniumSalt and ultrapure water composition；The hydrofluoric acid is electronic-stage hydrofluoric acid, mass concentration 45-52%；The nitric acid is electronic grade nitric acid, mass concentration 65-72%；The sulfuric acid is the electron level concentrated sulfuric acid, and mass concentration is 97% ~ 98%；The ammonium salt is excellent pure grade, and content >=99.95%, wherein the mass concentration of ammonium fluoride is 35-42%；The water is the ultrapure water that resistivity is 17-18M Ω cm at 25 DEG C.
- The liquid 2. silicon wafer according to claim 1 is polished, it is characterised in that: in polishing liquid the mass fraction of hydrofluoric acid be 1% ~ 3%；The mass fraction of nitric acid is 5% ~ 10%；The mass fraction of sulfuric acid is 60% ~ 80%；The mass fraction of ammonium salt is 1%-10%；Go from The mass fraction of sub- water is surplus.
- The liquid 3. silicon wafer according to claim 1 is polished, it is characterised in that: the ammonium salt in polishing liquid includes ammonium fluoride, chlorination One or both of ammonium, ammonium sulfate, ammonium hydrogen sulfate, ammonium nitrate, ammonium acetate；And preferred fluorinated ammonium, ammonium sulfate or hydrogen sulfate Ammonium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910123412.7A CN109913222A (en) | 2019-02-18 | 2019-02-18 | A kind of silicon wafer polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910123412.7A CN109913222A (en) | 2019-02-18 | 2019-02-18 | A kind of silicon wafer polishing liquid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109913222A true CN109913222A (en) | 2019-06-21 |
Family
ID=66961797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910123412.7A Pending CN109913222A (en) | 2019-02-18 | 2019-02-18 | A kind of silicon wafer polishing liquid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109913222A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112251233A (en) * | 2020-10-22 | 2021-01-22 | 湖北兴福电子材料有限公司 | Silicon etching solution for removing grinding lines |
| CN115895663A (en) * | 2022-12-28 | 2023-04-04 | 昆山金城试剂有限公司 | Silicon corrosive agent |
| CN116218529A (en) * | 2022-12-25 | 2023-06-06 | 湖北兴福电子材料股份有限公司 | P-silicon soaking corrosive liquid |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1411612A (en) * | 1999-12-22 | 2003-04-16 | 默克专利有限公司 | Method for raw etching silicon solar cells |
| CN101131546A (en) * | 2006-08-21 | 2008-02-27 | 第一毛织株式会社 | Wet etching solution |
| CN109321253A (en) * | 2018-11-28 | 2019-02-12 | 湖北兴福电子材料有限公司 | A kind of etching solution of Silicon Wafer |
-
2019
- 2019-02-18 CN CN201910123412.7A patent/CN109913222A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1411612A (en) * | 1999-12-22 | 2003-04-16 | 默克专利有限公司 | Method for raw etching silicon solar cells |
| CN101131546A (en) * | 2006-08-21 | 2008-02-27 | 第一毛织株式会社 | Wet etching solution |
| CN109321253A (en) * | 2018-11-28 | 2019-02-12 | 湖北兴福电子材料有限公司 | A kind of etching solution of Silicon Wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112251233A (en) * | 2020-10-22 | 2021-01-22 | 湖北兴福电子材料有限公司 | Silicon etching solution for removing grinding lines |
| CN112251233B (en) * | 2020-10-22 | 2021-09-07 | 湖北兴福电子材料有限公司 | Silicon etching solution for removing grinding lines |
| CN116218529A (en) * | 2022-12-25 | 2023-06-06 | 湖北兴福电子材料股份有限公司 | P-silicon soaking corrosive liquid |
| CN115895663A (en) * | 2022-12-28 | 2023-04-04 | 昆山金城试剂有限公司 | Silicon corrosive agent |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100248113B1 (en) | Cleaning and etching compositions for electrical display device and substrate | |
| CN109913222A (en) | A kind of silicon wafer polishing liquid | |
| AU780184B2 (en) | Method for raw etching silicon solar cells | |
| CN103403875A (en) | Method for the wet-chemical etching back of a solar cell emitter | |
| CN102007394B (en) | Etching composition, in particular for strained or stressed silicon materials, method for characterizing defects on surfaces of such materials and process of treating such surfaces with the etching composition | |
| CN101173359B (en) | Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition | |
| CN100365174C (en) | Process for treating a semiconductor wafer with a gaseous medium, and semiconductor wafer treated by this process | |
| CN104835731A (en) | Quick polishing method for large-dimension 4H,6H-SiC wafer | |
| CN107154351B (en) | Silicon wafer polishing method and device | |
| CN101399196B (en) | Coarsening processing method for backing side of wafer | |
| JP2005530045A (en) | Acid etching mixture with reduced water content | |
| Stapf et al. | Wafer cleaning, etching, and texturization | |
| JP2013065614A (en) | Wet etching method of silicon wafer and wet etching device | |
| CN115274425A (en) | Method for improving vacuum adsorption degree abnormity of silicon wafer | |
| CN107354513B (en) | High-efficiency stable germanium single crystal wafer etching process | |
| JPH11162953A (en) | Etching of silicon wafer | |
| CN113087403B (en) | Forming process for glass substrate with fingerprint resistance and scratch resistance and wear resistance | |
| JP4623624B2 (en) | Method of roughening the surface of a silicon wafer substrate | |
| CN112680229A (en) | Silicon-based material etching solution for wet electron chemistry and preparation method thereof | |
| KR100415261B1 (en) | Electronic display device and cleaning and etching composition for substrate | |
| CN110854018A (en) | High-selectivity silicon etching solution and use method thereof | |
| CN102931070B (en) | Silicon substrate isotropic wet etching process | |
| CN117672812B (en) | Silicon wafer processing method | |
| CN116815330B (en) | Dislocation etching liquid and dislocation etching method for wafer | |
| CN112233967B (en) | Processing method for improving abnormal falling of back metal and substrate Si |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190621 |