CN112680229A - Silicon-based material etching solution for wet electron chemistry and preparation method thereof - Google Patents
Silicon-based material etching solution for wet electron chemistry and preparation method thereof Download PDFInfo
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- CN112680229A CN112680229A CN202110128430.1A CN202110128430A CN112680229A CN 112680229 A CN112680229 A CN 112680229A CN 202110128430 A CN202110128430 A CN 202110128430A CN 112680229 A CN112680229 A CN 112680229A
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Abstract
The invention particularly relates to a wet electronic chemistry silicon-based material etching solution which comprises the following components in parts by weight: 25-45 parts of methanesulfonic acid; 10-30 parts of fluoride; 30-60 parts of water-soluble acid; 05-9.5 parts of a complexing agent; 0.5-3.5 parts of wetting agent; the balance of water is 100 parts of the total amount; wherein the water-soluble acid comprises at least one of nitric acid, sulfuric acid, phosphoric acid, perchloric acid, sulfinic acid, formic acid, acetic acid, citric acid, isocitric acid, and glycolic acid; the fluoride includes at least one of trifluoromethanesulfonic acid, sodium fluoride, sodium hydrogen fluoride, ammonium bifluoride, ammonium fluoroborate, potassium fluoride, potassium bifluoride, aluminum fluoride, fluoroboric acid, lithium fluoride, potassium fluoroborate, and calcium fluoride. The silicon-based material etching solution for wet electron chemistry can be used for safely, stably and efficiently etching a silicon substrate, the problem of insoluble byproducts generated in the etching process can be well solved, the industrial safety risk in the production process is low, and the cost required in a wastewater treatment process is reduced.
Description
Technical Field
The invention relates to the field of etching solution, in particular to silicon-based material etching solution for wet electron chemistry and a preparation method thereof.
Background
Silicon-based materials are required to be etched in the fields of semiconductor wafers, solar panels, IC integrated circuit boards, flat panel displays, plasma displays, etc. in the manufacture of liquid crystal display devices, plasma display devices, etc.
At present, the etching solution adopted by manufacturers for etching by a chemical method basically adopts hydrofluoric acid as a main component, and other water-soluble acids are added in an auxiliary manner. The hydrofluoric acid has high toxicity and is easy to volatilize, and particularly, higher temperature and concentration are needed during preparation, so that the hydrofluoric acid has high danger in the production process, and can cause huge pollution to the environment, meanwhile, byproducts generated by etching are easy to adsorb on the surfaces of glass, equipment and pipelines, so that the problems of poor product surface treatment effect, pipeline blockage and the like are caused, the etching rate is unstable in the production process, the utilization rate of the etching solution is relatively low, the waste liquid treatment capacity is large, and the treatment cost is increased. Meanwhile, since the etching capability of the etching solution for different materials is different, the degree of etching each layer of material in the multi-layer material to be etched is also different according to the type of the material.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a silicon-based material etching solution for wet electron chemistry, which solves the problems of high risk and easy pollution of hydrofluoric acid adopted in the prior art.
The technical scheme adopted by the invention for solving the technical problems is as follows: the silicon-based material etching solution for wet electronic chemistry comprises the following components in parts by weight:
25-45 parts of methanesulfonic acid;
10-30 parts of fluoride;
30-60 parts of water-soluble acid;
0.5-3.5 parts of wetting agent;
the balance of water is 100 parts of the total amount;
wherein the water-soluble acid comprises at least one of nitric acid, sulfuric acid, phosphoric acid, perchloric acid, sulfinic acid, formic acid, acetic acid, citric acid, isocitric acid, and glycolic acid;
the fluoride includes at least one of trifluoromethanesulfonic acid, sodium fluoride, sodium hydrogen fluoride, ammonium bifluoride, ammonium fluoroborate, potassium fluoride, potassium bifluoride, aluminum fluoride, fluoroboric acid, lithium fluoride, potassium fluoroborate, and calcium fluoride.
The etching solution disclosed by the invention has a strong corrosion effect on metal materials by containing methanesulfonic acid, provides fluoride ions and hydrogen ions by using fluoride and water-soluble acid, does not contain hydrofluoric acid in the reaction, can dissolve silicon-based material products and other components, and has a better guarantee on the safety of the etching solution. And meanwhile, the wetting agent is added, so that the etching solution is uniformly mixed, and the surface of the silicon substrate is wetted to etch.
In a preferred embodiment, the wet electronic chemical etching solution for the silicon-based material comprises the following components in parts by weight:
25-35 parts of methanesulfonic acid;
10-20 parts of fluoride;
30-45 parts of water-soluble acid;
0.5-3.5 parts of wetting agent;
the balance of water is 100 parts of the total amount.
In a preferred embodiment, the wet electronic chemical etching solution for the silicon-based material comprises the following components in parts by weight:
25 parts of methanesulfonic acid;
13 parts of fluoride;
35 parts of water-soluble acid;
3 parts of a wetting agent;
the balance of water is 100 parts of the total amount.
In a preferred embodiment, the water-soluble acid comprises 20-40 parts of nitric acid and 10-20 parts of weak acid by weight of the etching solution of the silicon-based material in wet electronic chemistry, wherein the weak acid is at least one of phosphoric acid, formic acid, acetic acid, citric acid, isocitric acid and glycolic acid.
The strong acid and the weak acid are matched, so that the reaction speed can be slowed down, and the problem that the surface structure of the base material is influenced by the too high etching speed is avoided.
In a preferred embodiment, the wet-electrochemical etching solution for silicon-based materials further comprises 0.5-9.5 parts of a complexing agent, wherein the complexing agent comprises at least one of tetrahydroxypropylethylenediamine and ethylenediamine tetraacetic acid.
The added complexing agent can form a chelate with metal ions generated by etching and is easier to dissolve by water, so that the problem that byproducts are difficult to dissolve in the etching process is solved, and the cleaning of products after etching of silicon substrates of different materials is facilitated.
In a preferred embodiment, the complexing agent is 0.5-5 parts by weight of the silicon-based material etching solution in wet electronic chemistry.
In a preferred embodiment, the wetting agent is sodium alkyl sulfate and/or sodium fatty acid.
The selected wetting agent can be used for uniform mixing of the etching solution and cleaning and wetting of the surface of the silicon-based material.
As a second aspect of the present invention, there is also provided a method for producing the above-mentioned silicon-based material etching solution, comprising a step of mixing the components of the wet electron-chemical silicon-based material etching solution.
Has the advantages that:
compared with the prior art, the wet electrochemical etching solution for the silicon-based material is prepared by respectively providing fluoride ions and hydrogen ions by using water-soluble acid and fluoride, and simultaneously adopting methanesulfonic acid with strong corrosivity, can be used for safely, stably and efficiently etching silicon substrates of different materials under the action of an auxiliary aid, can well solve the problem of insoluble byproducts generated in the etching process, and is low in industrial safety risk in the production process.
The preparation method of the wet electronic chemistry silicon-based material etching solution is simple to operate and easy to produce.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but those skilled in the art will appreciate that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products commercially available.
Example 1
The wet electrochemically etching solution for silicon-based materials provided in this embodiment includes, in parts by weight: 25 parts of methanesulfonic acid; 13 parts of trifluoromethanesulfonic acid; 25 parts of nitric acid and 5 parts of citric acid; hydrochloric acid: 5 parts of a mixture; q75 (tetrahydroxypropylethylenediamine): 3 parts of a mixture; sodium alkyl sulfate: 3 parts of a mixture; the balance of water is 100 parts of the total amount.
And obtaining the components according to the proportion, uniformly mixing the components at the temperature of 20-30 ℃, and then standing for aging to obtain the wet electronic chemical silicon-based material etching solution.
The detection method for etching the silicon substrate comprises the following steps:
the silicon substrate is polished for 20-30min, and then the polished silicon substrate is cleaned by pure water and then dried by cold air. And etching the dried silicon substrate.
And (3) selecting a silicon substrate with the thickness of 1mm after drying for etching, putting the silicon substrate into an etching tank containing the etching solution, and performing double-sided etching, wherein the etching time is 10min, and the etching temperature is controlled at 20-30 ℃. And after etching for 10min, taking out, washing with deionized water, drying, measuring the thickness of the etching solution, and observing the surface and the condition of the etching solution.
The thickness of the silicon substrate obtained by measurement is 0.85mm, no concave points or convex points are found on the surface of the silicon substrate, the thickness uniformity of the silicon substrate is less than 1%, and the etching solution contains a small amount of white floccules.
The solution works best.
Example 2
The wet electronic chemistry etching solution for silicon-based materials of the embodiment comprises the following components in parts by weight: 30 parts of methanesulfonic acid; 10 parts of trifluoromethanesulfonic acid; 35 parts of nitric acid; 5 parts of citric acid; hydrochloric acid: 10 parts of (A); q75: 3 parts of a mixture; sodium alkyl sulfate: 3 parts of a mixture; the balance of water is 100 parts of the total amount.
The etching solution was prepared and tested on silicon substrates as in example 1.
The thickness of the silicon substrate obtained by measurement is 0.84mm, no concave points and convex points are found on the surface of the silicon substrate, the thickness uniformity of the silicon substrate is less than 1 percent, and the etching solution contains a small amount of white floccules.
Example 3
The wet electronic chemistry etching solution for silicon-based materials of the embodiment comprises the following components in parts by weight: 40 parts of methanesulfonic acid; 15 parts of trifluoromethanesulfonic acid; 25 parts of nitric acid; hydrochloric acid: 10 parts of (A); q75: 5 parts of a mixture; sodium alkyl sulfate: 3 parts of a mixture; the balance of water is 100 parts of the total amount.
The etching solution was prepared and tested on silicon substrates as in example 1.
The thickness of the silicon substrate obtained by measurement is 0.81mm, no concave points and convex points are found on the surface of the silicon substrate, the thickness uniformity of the silicon substrate is less than 1 percent, and the etching solution contains a small amount of white floccules.
Example 4
The wet electronic chemistry etching solution for silicon-based materials of the embodiment comprises the following components in parts by weight: 25 parts of methanesulfonic acid; 13 parts of trifluoromethanesulfonic acid; 35 parts of nitric acid; q75: 5 parts of a mixture; sodium alkyl sulfate: 3 parts of a mixture; the balance of water is 100 parts of the total amount.
The thickness of the silicon substrate obtained by measurement is 0.82mm, no concave points and convex points are found on the surface of the silicon substrate, the thickness uniformity of the silicon substrate is less than 1 percent, and the etching solution contains a small amount of white floccules. The reaction speed of the etching solution for the silicon-based material in the wet electronic chemistry without adding the weak acid is higher than that of the etching solution for the silicon-based material in the wet electronic chemistry without adding the weak acid, and the thickness of the etched silicon substrate is thinner, but the danger is relatively increased when the etching solution is applied to production.
Example 5
The wet electronic chemistry etching solution for silicon-based materials of the embodiment comprises the following components in parts by weight: 30 parts of methanesulfonic acid; 10 parts of trifluoromethanesulfonic acid; 35 parts of nitric acid; 5 parts of citric acid; hydrochloric acid: 10 parts of (A); sodium alkyl sulfate: 3 parts of a mixture; the balance of water is 100 parts of the total amount.
The thickness of the obtained silicon substrate was measured to be 0.84mm, a small amount of etching products was attached to the surface of the silicon substrate, the thickness uniformity of the silicon substrate was less than 1%, and the etching solution contained a small amount of white floc. Compared with the silicon-based material etching solution with wet electronic chemistry added with the Q75 complexing agent, the silicon-based material etching solution without the added complexing agent has the advantages that a small amount of etching products are attached to the surface of a silicon substrate, the surface of the silicon substrate is difficult to clean, and byproducts in the etching solution after reaction are difficult to dissolve.
Example 6
The wet electronic chemistry etching solution for silicon-based materials of the embodiment comprises the following components in parts by weight: 30 parts of methanesulfonic acid; 10 parts of trifluoromethanesulfonic acid; 35 parts of nitric acid; 5 parts of citric acid; hydrochloric acid: 10 parts of (A); sodium alkyl sulfate: 3 parts of a mixture; the balance of water is 100 parts of the total amount.
The thickness of the obtained silicon substrate was measured to be 0.84mm, a small amount of etching products was attached to the surface of the silicon substrate, the thickness uniformity of the silicon substrate was less than 1%, and the etching solution contained a small amount of white floc. Compared with the silicon-based material etching solution with wet electronic chemistry added with the Q75 complexing agent, the silicon-based material etching solution without the added complexing agent has the advantages that a small amount of etching products are attached to the surface of a silicon substrate, the surface of the silicon substrate is difficult to clean, and byproducts in the etching solution after reaction are difficult to dissolve.
Example 7
The wet electronic chemistry etching solution for silicon-based materials of the embodiment comprises the following components in parts by weight: 50 parts of methanesulfonic acid; 10 parts of trifluoromethanesulfonic acid; 30 parts of nitric acid; sodium alkyl sulfate: 2 parts of (1); the balance of water is 100 parts of the total amount.
The thickness of the silicon substrate obtained by measurement is 0.80mm, concave points and convex points are found on the surface of the silicon substrate, the thickness uniformity of the silicon substrate is more than 1 percent, and the etching solution contains a small amount of white floccules. When the amount of methanesulfonic acid is sufficiently large, unevenness and bumps appear on the surface UI of the silicon substrate, which is not favorable for etching.
Based on the above, the wet-electronic-chemistry etching solution for silicon-based materials can be used for safely, stably and efficiently etching the silicon substrate.
The above examples of the present invention are merely examples for clearly illustrating the present invention and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (8)
1. A silicon-based material etching solution of wet electronic chemistry is characterized by comprising the following components in parts by weight:
25-45 parts of methanesulfonic acid;
10-30 parts of fluoride;
30-60 parts of water-soluble acid;
0.5-3.5 parts of wetting agent;
the balance of water is 100 parts of the total amount;
wherein the water-soluble acid comprises at least one of nitric acid, sulfuric acid, phosphoric acid, perchloric acid, sulfinic acid, formic acid, acetic acid, citric acid, isocitric acid, and glycolic acid;
the fluoride includes at least one of trifluoromethanesulfonic acid, sodium fluoride, sodium hydrogen fluoride, ammonium bifluoride, ammonium fluoroborate, potassium fluoride, potassium bifluoride, aluminum fluoride, fluoroboric acid, lithium fluoride, potassium fluoroborate, and calcium fluoride.
2. The wet, electro-chemical, etching solution for silicon-based materials according to claim 1, comprising, in parts by weight:
25-35 parts of methanesulfonic acid;
10-20 parts of fluoride;
30-45 parts of water-soluble acid;
0.5-3.5 parts of wetting agent;
the balance of water is 100 parts of the total amount.
3. The wet, electro-chemical, etching solution for silicon-based materials according to claim 2, comprising the following components in parts by weight:
25 parts of methanesulfonic acid;
13 parts of fluoride;
35 parts of water-soluble acid;
3 parts of a wetting agent;
the balance of water is 100 parts of the total amount.
4. A wet electronic chemistry etching solution for silicon-based materials according to any one of claims 1 to 3, wherein said water-soluble acid comprises 20 to 40 parts by weight of nitric acid and 10 to 20 parts by weight of a weak acid, wherein said weak acid is at least one of phosphoric acid, formic acid, acetic acid, citric acid, isocitric acid, and glycolic acid.
5. The wet electrochemically silicon-based material etching solution according to claim 4, further comprising 0.5 to 9.5 parts of a complexing agent, wherein the complexing agent comprises at least one of tetrahydroxypropylethylenediamine and ethylenediaminetetraacetic acid.
6. The wet electrolessly silicon-based material etching solution of claim 5 wherein the complexing agent is present in an amount of 0.5 to 5 parts by weight based on the wet electrolessly silicon-based material etching solution.
7. The wet, electro-chemical, etching solution for silicon-based materials according to claim 6, wherein the wetting agent is sodium alkyl sulfate and/or sodium fatty acid.
8. A method for preparing an etching solution for silicon-based materials according to any one of claims 1 to 3, comprising the step of mixing the components of the etching solution for silicon-based materials in wet electron chemistry.
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Cited By (1)
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