CN108033686A - A kind of etching liquid for thinning glass substrate - Google Patents
A kind of etching liquid for thinning glass substrate Download PDFInfo
- Publication number
- CN108033686A CN108033686A CN201711338230.9A CN201711338230A CN108033686A CN 108033686 A CN108033686 A CN 108033686A CN 201711338230 A CN201711338230 A CN 201711338230A CN 108033686 A CN108033686 A CN 108033686A
- Authority
- CN
- China
- Prior art keywords
- acid
- glass substrate
- etching
- etching liquid
- thinning glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
The present invention provides a kind of etching liquid for thinning glass substrate, which is prepared by the raw material including following percentage by weight：Tetrabutyl ammonium fluoride:10 20%, organic acid:1 10%, inorganic acid:1 10%, metal-chelator:1 7%, surfactant:1 5%, polyvinyl alcohol (PVA):1 2%, and the water of surplus.The etching liquid for thinning glass substrate provides F by optimization of C/C composites by tetrabutyl ammonium fluoride‑, organic acid and inorganic acid can provide H+, equally reached the effect of etching glass, also avoided using hydrofluoric acid.
Description
Technical field
The present invention relates to thinning glass substrate production technical field, more particularly, to a kind of etching liquid for thinning glass substrate.
Background technology
In flat display field, including in the preparation process such as plasma is shown, touch-screen, liquid crystal display, in order to
Further mitigate the weight of display device, manufacturer more and more uses and glass substrate is carried out to thinned method.Glass
The method of substrate attenuation usually has two kinds, and one kind is physics polishing grinding, and another kind is that chemical etching is thinned, wherein, chemistry erosion
It is most widely used to carve thinned.At present, what used attenuation etching liquid substrate used be all using hydrofluoric acid as mainly into
Point, but the toxicity of hydrofluoric acid is big, volatile, especially need to use higher temperature and concentration in configuration, not only production process
It is middle dangerous high, and huge pollution can be caused to environment.
The content of the invention
In view of this, the present invention is directed to propose a kind of etching liquid for thinning glass substrate, by optimization of C/C composites, by tetrabutyl fluorine
Change ammonium and F is provided-, organic acid and inorganic acid can provide H+, equally reached the effect of etching glass, also avoided using hydrofluoric acid.
To reach above-mentioned purpose, the technical proposal of the invention is realized in this way：
A kind of etching liquid for thinning glass substrate, the etching solution are prepared by the raw material including following percentage by weight：Four
Butyl ammonium fluoride:10-20%, organic acid:1-10%, inorganic acid:1-10%, metal-chelator:1-7%, surfactant:1-
5%, polyvinyl alcohol (PVA):1-2%, and the water of surplus.
Further, which is prepared by the raw material including following percentage by weight：Tetrabutyl ammonium fluoride:10-
20%, organic acid:5-10%, inorganic acid:5-10%, metal-chelator:1-7%, surfactant:1-5%, polyvinyl alcohol
(PVA):1-2%, and the water of surplus.
Further, the metal-chelator is aminotriacetic acid (NTA) or ethylenediamine tetra-acetic acid (EDTA).
Further, the organic acid is formic acid, acetic acid, oxalic acid, propionic acid, ethanedioic acid, succinic acid, salicylic acid, sorbic acid, lemon
One or more of mixtures in lemon acid, malic acid, benzoic acid or methanesulfonic acid.
Further, the inorganic acid is one or more of mixtures in hydrochloric acid, nitric acid, sulfuric acid or phosphoric acid.
Further, the surfactant is sodium alkyl sulfate, anionic polyacrylamide, alkyl polyoxyethylene ether sulfuric acid
One or more in sodium, Alkyl ethoxy carboxylate acid sodium, sodium alkyl sulfate.
Further, which is prepared by the preparation method included the following steps：
(1) tetrabutyl ammonium fluoride, metal-chelator are added to the water, stirring is completely dissolved it；
(2) add in the aqueous solution that step (1) obtains and dilute after mixing organic acid and inorganic acid；
(3) and then by surfactant, polyvinyl alcohol (PVA) add in the solution that step (2) obtains, stir evenly.
Relative to the prior art, etching liquid for thinning glass substrate of the present invention has the advantage that：
Etching liquid for thinning glass substrate of the present invention devises brand-new etching formula of liquid, is fluorinated using the tetrabutyl
Ammonium, can ionize out F in water-, while with the addition of and H is provided+Organic acid and inorganic acid, make etching solution have the function that etching,
And tetrabutyl ammonium fluoride is incomplete ionization, is constantly ionized with the progress of reaction, play the role of buffering, ensure that
Etch-rate temperature, the also not hydrofluoric acid containing in whole reaction greatly reduce the toxicity of etching solution, and Manufacturing Worker operates more
Securely and reliably；Organic acid belongs to weak acid, also can slowed down reaction speed, both meet etching requirement turn avoid etching speed mistake
Fast the problem of influencing substrate surface structure；Metal-chelator can form chelate with metal ion caused by etching, more hold
Easily it is dissolved in water, so as to solve the problems, such as accessory substance indissoluble in etching process, avoids product from being attached to glass baseplate surface, carry
High etch-rate and etch effect；Surfactant can also play the role of glass surface clean.
Embodiment
It should be noted that in the case where there is no conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
Below in conjunction with embodiment, the present invention will be described in detail.
Embodiment 1
A kind of etching liquid for thinning glass substrate, the etching solution are prepared by the raw material including percentage by weight as shown in Table 1
Obtain：
The formula of the etching solution of 1 embodiment 1 of table
Embodiment 2
A kind of etching liquid for thinning glass substrate, the etching solution are prepared by the raw material including percentage by weight as shown in Table 2
Obtain：
The formula of the etching solution of 2 embodiment 2 of table
Embodiment 3
A kind of etching liquid for thinning glass substrate, the etching solution are prepared by the raw material including percentage by weight as shown in table 3
Obtain：
The formula of the etching solution of 3 embodiment 3 of table
Embodiment 4
A kind of etching liquid for thinning glass substrate, the etching solution are prepared by the raw material including percentage by weight as shown in table 4
Obtain：
The formula of the etching solution of 4 embodiment 4 of table
Etching liquid for thinning glass substrate described in embodiment 1-4 is prepared by the preparation method included the following steps：
(1) tetrabutyl ammonium fluoride, metal-chelator are added to the water, stirring is completely dissolved it；
(2) add in the aqueous solution that step (1) obtains and dilute after mixing organic acid and inorganic acid；
(3) and then by surfactant, polyvinyl alcohol (PVA) add in the solution that step (2) obtains, stir evenly.
Processing method：
1) according to each 1000L of recipe configuration etching liquid for thinning glass substrate of embodiment 1-4, and enchashment has etching solution
1000L；
2) glass substrate of the identical producer's same batch of 5 pieces of plate nitre AN100, thickness 1.000mm are used, size is
730mm × 920mm, numbering is I~V, after cleaning up, is respectively put into containing embodiment 1-4 etching solutions and existing etching solution
In etching groove, etch 10 minutes, etch temperature is controlled at 25-30 DEG C, then glass substrate is put into etching basket vertically, completely
It is immersed in etching groove, bubbling is carried out to etching acid solution in etching process, bubbling amount is 100L/min.
3) after etching 30 minutes, glass substrate is taken out, with deionized water rinsing and is dried, and measure the thickness of glass substrate
Degree, such as table 5.
The thickness data of 5 glass substrate of table
| I | II | III | IV | V | |
| Thickness/mm | 0.94 | 0.95 | 0.94 | 0.96 | 0.92 |
| Thickness non-uniformities | Less than 1% | Less than 1% | Less than 1% | Less than 1% | More than 1% |
As can be seen from Table 5, at the same time, the glass etching in the etching solution that embodiment 1-4 is configured
The thickness etched in the existing etching solution of thickness ratio afterwards is thick, and tetrabutyl ammonium fluoride and organic acid play slow used by explanation
Erosion acts on, and the thickness non-uniformities after etching are also better than existing etching solution effect.
6 embodiment 1-4 experimental results of table
| Numbering | With glass reaction speed | Actual effect |
| I | 2.8μm/min | Glass surface has no that raised, scuffing notch has no obvious amplification |
| II | 2.6μm/min | Glass surface has no that raised, scuffing notch has no obvious amplification |
| III | 2.7μm/min | Glass surface has no that raised, scuffing notch has no obvious amplification |
| IV | 2.5μm/min | Glass surface has no that raised, scuffing notch has no obvious amplification |
| V | 3.1μm/min | Glass surface has minute protrusions, scuffing notch to have no obvious amplification |
As can be seen from Table 6, reaction of the reaction rate for the etching solution that embodiment 1-4 is configured than existing etching solution
Speed is slow, has corrosion mitigating effect, and etch effect is also better than existing etching solution, has both met etching requirement and turn avoid
Etching speed it is too fast influence substrate surface structure the problem of.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modification, equivalent replacement, improvement and so on, should all be included in the protection scope of the present invention god.
Claims (7)
- A kind of 1. etching liquid for thinning glass substrate, it is characterised in that：The etching solution is by including the raw material system of following percentage by weight It is standby to obtain：Tetrabutyl ammonium fluoride:10-20%, organic acid:1-10%, inorganic acid:1-10%, metal-chelator:1-7%, surface Activating agent:1-5%, polyvinyl alcohol (PVA):1-2%, and the water of surplus.
- 2. etching liquid for thinning glass substrate according to claim 1, it is characterised in that：The etching solution is by including following weight The raw material of percentage is prepared：Tetrabutyl ammonium fluoride:10-20%, organic acid:5-10%, inorganic acid:5-10%, metal chelating Mixture:1-7%, surfactant:1-5%, polyvinyl alcohol (PVA):1-2%, and the water of surplus.
- 3. etching liquid for thinning glass substrate according to claim 1 or 2, it is characterised in that：The metal-chelator is ammonia Base triacetic acid (NTA) or ethylenediamine tetra-acetic acid (EDTA).
- 4. etching liquid for thinning glass substrate according to claim 1 or 2, it is characterised in that：The organic acid is formic acid, second One kind in acid, oxalic acid, propionic acid, ethanedioic acid, succinic acid, salicylic acid, sorbic acid, citric acid, malic acid, benzoic acid or methanesulfonic acid Or several mixture.
- 5. etching liquid for thinning glass substrate according to claim 1 or 2, it is characterised in that：The inorganic acid is hydrochloric acid, nitre One or more of mixtures in acid, sulfuric acid or phosphoric acid.
- 6. etching liquid for thinning glass substrate according to claim 1 or 2, it is characterised in that：The surfactant is alkane Base sodium sulphate, anionic polyacrylamide, pareth sulfate, Alkyl ethoxy carboxylate acid sodium, fatty alcohol sulphur One or more in sour sodium.
- 7. etching liquid for thinning glass substrate according to claim 1 or 2, it is characterised in that：The etching solution is by including as follows The preparation method of step is prepared：(1) tetrabutyl ammonium fluoride, metal-chelator are added to the water, stirring is completely dissolved it；(2) add in the aqueous solution that step (1) obtains and dilute after mixing organic acid and inorganic acid；(3) and then by surfactant, polyvinyl alcohol (PVA) add in the solution that step (2) obtains, stir evenly.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711338230.9A CN108033686A (en) | 2017-12-14 | 2017-12-14 | A kind of etching liquid for thinning glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711338230.9A CN108033686A (en) | 2017-12-14 | 2017-12-14 | A kind of etching liquid for thinning glass substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108033686A true CN108033686A (en) | 2018-05-15 |
Family
ID=62103153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711338230.9A Pending CN108033686A (en) | 2017-12-14 | 2017-12-14 | A kind of etching liquid for thinning glass substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108033686A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110937818A (en) * | 2019-12-03 | 2020-03-31 | 凯茂科技(深圳)有限公司 | Glass etching solution and glass etching method |
| CN113336448A (en) * | 2021-05-18 | 2021-09-03 | 江西欧迈斯微电子有限公司 | Glass etching solution and preparation method thereof, ultrathin glass substrate and etching method thereof |
| CN114685058A (en) * | 2022-04-28 | 2022-07-01 | 江西群泰科技有限公司 | Preparation method of glass cover plate, glass cover plate and mobile terminal |
| CN115043594A (en) * | 2021-03-09 | 2022-09-13 | 易安爱富科技有限公司 | Etching solution for display substrate and preparation method thereof |
| CN116002982A (en) * | 2022-07-05 | 2023-04-25 | 南通群安电子材料有限公司 | Liquid medicine suitable for high-transmittance anti-dazzle stripping etching |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1644545A (en) * | 2004-12-21 | 2005-07-27 | 陈荷丽 | Etching agent of motor-driven vehicle glass and applying method thereof |
| CN101560058A (en) * | 2008-04-15 | 2009-10-21 | 株式会社东进世美肯 | Cleaning and etching composition for glass substrate for liquid crystal display device and method for etching glass substrate using the same |
| CN101838111A (en) * | 2010-05-20 | 2010-09-22 | 合肥茂丰电子科技有限公司 | Glass substrate etching solution and preparation method thereof |
| CN102683243A (en) * | 2011-03-04 | 2012-09-19 | 三菱瓦斯化学株式会社 | Substrate processing apparatus and substrate processing method |
| CN104761150A (en) * | 2015-03-16 | 2015-07-08 | 南昌欧菲光学技术有限公司 | Glass etching liquid and method of etching glass therewith, cover glass and preparation method thereof |
| CN106630659A (en) * | 2017-01-09 | 2017-05-10 | 天津美泰真空技术有限公司 | Pretreatment fluid for TFT glass substrate thinning process |
-
2017
- 2017-12-14 CN CN201711338230.9A patent/CN108033686A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1644545A (en) * | 2004-12-21 | 2005-07-27 | 陈荷丽 | Etching agent of motor-driven vehicle glass and applying method thereof |
| CN101560058A (en) * | 2008-04-15 | 2009-10-21 | 株式会社东进世美肯 | Cleaning and etching composition for glass substrate for liquid crystal display device and method for etching glass substrate using the same |
| CN101838111A (en) * | 2010-05-20 | 2010-09-22 | 合肥茂丰电子科技有限公司 | Glass substrate etching solution and preparation method thereof |
| CN102683243A (en) * | 2011-03-04 | 2012-09-19 | 三菱瓦斯化学株式会社 | Substrate processing apparatus and substrate processing method |
| CN104761150A (en) * | 2015-03-16 | 2015-07-08 | 南昌欧菲光学技术有限公司 | Glass etching liquid and method of etching glass therewith, cover glass and preparation method thereof |
| CN106630659A (en) * | 2017-01-09 | 2017-05-10 | 天津美泰真空技术有限公司 | Pretreatment fluid for TFT glass substrate thinning process |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110937818A (en) * | 2019-12-03 | 2020-03-31 | 凯茂科技(深圳)有限公司 | Glass etching solution and glass etching method |
| CN110937818B (en) * | 2019-12-03 | 2022-03-29 | 凯茂科技(深圳)有限公司 | Glass etching solution and glass etching method |
| CN115043594A (en) * | 2021-03-09 | 2022-09-13 | 易安爱富科技有限公司 | Etching solution for display substrate and preparation method thereof |
| CN113336448A (en) * | 2021-05-18 | 2021-09-03 | 江西欧迈斯微电子有限公司 | Glass etching solution and preparation method thereof, ultrathin glass substrate and etching method thereof |
| CN114685058A (en) * | 2022-04-28 | 2022-07-01 | 江西群泰科技有限公司 | Preparation method of glass cover plate, glass cover plate and mobile terminal |
| CN116002982A (en) * | 2022-07-05 | 2023-04-25 | 南通群安电子材料有限公司 | Liquid medicine suitable for high-transmittance anti-dazzle stripping etching |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108033686A (en) | A kind of etching liquid for thinning glass substrate | |
| KR100248113B1 (en) | Cleaning and etching compositions for electrical display device and substrate | |
| CN107954608A (en) | A kind of glass substrate etching solution | |
| CN101481215B (en) | Etchant composition for glass of flat panel display | |
| CN108585530A (en) | A kind of glass etching liquid and preparation method thereof | |
| CN102628009B (en) | Scavenging solution and purging method | |
| KR100865881B1 (en) | Surface treating fluid for fine processing of multi-component glass substrate | |
| CN107902914A (en) | A kind of glass substrate thinning technique etching solution | |
| CN112592775B (en) | Control separation blade cleaning solution and cleaning method | |
| CN104388090B (en) | Oxalic acid-series ITO (Indium Tin Oxide) etching liquid, as well as preparation method and application thereof | |
| CN114350367B (en) | Low-foam etching solution with uniform etching | |
| US10689573B2 (en) | Wet etching composition for substrate having SiN layer and Si layer and wet etching method using same | |
| SG178308A1 (en) | Microprocessing treatment agent and microprocessing treatment method using same | |
| KR20130008331A (en) | An etching solution composition for copper layer/titanium layer | |
| CN111892931B (en) | BOE etching solution | |
| CN107814491A (en) | A kind of flat glass substrate etching solution | |
| CN103880293A (en) | Etching liquid for secondary reinforcement of glass as well as preparation method and application thereof | |
| CN103208421B (en) | A kind of method improving silicon nitride layer and oxide layer etching selection ratio | |
| CN102379028A (en) | Etching liquid | |
| KR102006323B1 (en) | Etching solution composition and method of wet etching with the same | |
| KR20130025612A (en) | An etching solution composition for oxide layer containing gallium | |
| CN109694203A (en) | A kind of glass thin chemical industry skill pretreatment fluid | |
| KR100415261B1 (en) | Electronic display device and cleaning and etching composition for substrate | |
| KR20110019604A (en) | Etching solution composition for formation of metal line | |
| KR101728542B1 (en) | An etching solution composition for molybdenum |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180515 |