CN101560058A - Cleaning and etching composition for glass substrate for liquid crystal display device and method for etching glass substrate using the same - Google Patents
Cleaning and etching composition for glass substrate for liquid crystal display device and method for etching glass substrate using the same Download PDFInfo
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- CN101560058A CN101560058A CNA200910134360XA CN200910134360A CN101560058A CN 101560058 A CN101560058 A CN 101560058A CN A200910134360X A CNA200910134360X A CN A200910134360XA CN 200910134360 A CN200910134360 A CN 200910134360A CN 101560058 A CN101560058 A CN 101560058A
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- 238000005530 etching Methods 0.000 title claims abstract description 103
- 239000011521 glass Substances 0.000 title claims abstract description 56
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 title abstract description 7
- 238000004140 cleaning Methods 0.000 title abstract description 6
- 150000004673 fluoride salts Chemical class 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000470 constituent Substances 0.000 claims description 35
- 239000002253 acid Substances 0.000 claims description 15
- 239000013543 active substance Substances 0.000 claims description 13
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 13
- 239000011707 mineral Substances 0.000 claims description 13
- 239000003112 inhibitor Substances 0.000 claims description 11
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 8
- 239000003945 anionic surfactant Substances 0.000 claims description 7
- 125000003709 fluoroalkyl group Chemical group 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 150000008052 alkyl sulfonates Chemical class 0.000 claims description 4
- -1 fluoroalkyl phosphate Chemical class 0.000 claims description 4
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 150000003016 phosphoric acids Chemical class 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 125000004422 alkyl sulphonamide group Chemical class 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical group [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 2
- 229940124530 sulfonamide Drugs 0.000 claims description 2
- 241001597008 Nomeidae Species 0.000 claims 2
- NRSWGNXBEVDTNI-UHFFFAOYSA-N 2-fluorooxirane Chemical group FC1CO1 NRSWGNXBEVDTNI-UHFFFAOYSA-N 0.000 claims 1
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 17
- 238000004065 wastewater treatment Methods 0.000 abstract description 3
- 150000007522 mineralic acids Chemical class 0.000 abstract description 2
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 15
- 239000006260 foam Substances 0.000 description 13
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 230000002950 deficient Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 239000004034 viscosity adjusting agent Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GHXRKGHKMRZBJH-UHFFFAOYSA-N boric acid Chemical compound OB(O)O.OB(O)O GHXRKGHKMRZBJH-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- LFLZOWIFJOBEPN-UHFFFAOYSA-N nitrate, nitrate Chemical compound O[N+]([O-])=O.O[N+]([O-])=O LFLZOWIFJOBEPN-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- CBXWGGFGZDVPNV-UHFFFAOYSA-N so4-so4 Chemical compound OS(O)(=O)=O.OS(O)(=O)=O CBXWGGFGZDVPNV-UHFFFAOYSA-N 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Surface Treatment Of Glass (AREA)
- Weting (AREA)
- Liquid Crystal (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a composition capable of simultaneously cleaning and etching a glass substrate for a liquid crystal display device, and particularly discloses an etching solution composition containing fluoride salt, inorganic acid, surfactant and water. When the etching solution according to an embodiment of the present invention is used, cleaning and etching can be performed at the same time, a glass substrate having a desired thickness can be manufactured because the etching rate is easily adjusted, and film uniformity, light transmittance, and color reproducibility of the glass substrate can be ensured. In addition, hydrofluoric acid is not used, so that the safety of wastewater treatment and processes can be ensured.
Description
Technical field
The present invention relates to clean simultaneously and the etching solution crystal device with the constituent of glass substrate, relate to the etching solution constituent that comprises fluoride salt, mineral acid, tensio-active agent and water particularly.
Background technology
Liquid crystal indicator (liquid crystal display device, LCD device) since the characteristic that image based on the distinctness of the resolving power of brilliance, little power consumption is provided, can makes display frame than unfertile land in panel display apparatus, receive publicity most.
Liquid crystal indicator is used in and comprises the moving with equipment and TV of mobile phone, notebook type PC, requirement along with slim, the light weight of aforesaid device, the technology of the weight of the glass substrate of weight reduction maximum becomes important in the constituent element that constitutes the LCD device, and being etched into of glass substrate is important problem thereupon.
Existing glass substrate etching method (No. the 815856th, Korea patent registration) is the method for the hydrofluoric acid (HF) that utilizes strong toxicity, smokiness, has generated hydrofluosillicic acid (H thus
2SiF
6).Now, forbid the use of hydrofluoric acid gradually by the environment regulation with the various countries headed by China and the Taiwan.In addition, when utilizing the hydrofluoric acid etch glass substrate as the past, etching speed is too fast, or is difficult to keep film uniformity coefficient, transmitance and the color reproduction etc. of glass substrate.
As oxygenant, research to the glass substrate etching solution (Korea patent registration No. 248113, No. 415261) that uses persulphate is also arranged, but under the situation of persulphate, owing to have the character of oneself decomposing, so etching solution keeping security reduces, existence need be carried out the problem of low temperature keeping.
In addition, as viscosity modifier, the research of the glass substrate etching solution (No. the 677052nd, Korea patent registration) of pair phosphoric acid, ethylene glycol, glycol etc. is also arranged, but the interpolation of viscosity modifier causes the viscosity of etching solution to rise, during the etching large glass, there is the bad problem that causes by spot that produces.
Summary of the invention
The objective of the invention is to, cleaning and the etching constituent and the engraving method of the outstanding glass substrate of a kind of keeping security are provided, for the security on wastewater treatment and the operation, do not use hydrofluoric acid, and easily regulate etching speed, thereby poorly do not regulate thickness of glass, and keep film uniformity coefficient, transmitance and the color reproduction of glass substrate.
The invention provides a kind of etching solution constituent, comprise with respect to whole etching solution constituent weight fluoride salt, 10～60 weight % of 0.1～30 weight % mineral acid, 0.001～3 weight % tensio-active agent and make the constituent gross weight become the water of the amount of 100 weight %.
In addition, provide utilize above-mentioned etching solution constituent to clean simultaneously and the liquid crystal indicator glass substrate etching method of the step of etching glass substrate a kind of in the liquid crystal indicator manufacturing, comprising.
If use etching solution according to one embodiment of the invention, it is outstanding then to take care of security, can clean simultaneously and etching, regulates etching speed easily, the glass substrate of wishing thickness can be made, film uniformity coefficient, transmitance and the color reproduction of glass substrate can be guaranteed.In addition, by not using hydrofluoric acid, can guarantee the security on wastewater treatment and the operation.
Description of drawings
Fig. 1 is the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken with after the existing etching solution etching glass substrate that uses hydrofluoric acid.
Fig. 2 is that the inventor uses this photo by scanning electronic microscope the thickness and the surface of glass substrate being measured, taken afterwards than the etching solution etching glass substrate of example 2 according to imagination.
Fig. 3 is that the inventor uses the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken according to after the etching solution etching glass substrate of the comparative example of imagining 3.
Fig. 4 is that the inventor uses the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken according to after the etching solution etching glass substrate of the comparative example of imagining 4.
Fig. 5 is that the inventor uses the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken according to after the etching solution etching glass substrate of the comparative example of imagining 5.
Fig. 6 is that the inventor uses the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken according to after the etching solution etching glass substrate of the comparative example of imagining 6.
Fig. 7 uses the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken according to after the etching solution etching glass substrate of embodiments of the invention 1.
Fig. 8 uses the photo of by scanning electronic microscope the thickness and the surface of glass substrate being measured, being taken according to after the etching solution etching glass substrate of embodiments of the invention 2.
Embodiment
Below, the present invention will be described in more detail.
Etching solution constituent of the present invention comprise with respect to whole etching solution constituent weight fluoride salt (Fluoride salt), 10～60 weight % of 0.1～30 weight % mineral acid (Inorganic acid), 0.001～3 weight % tensio-active agent and make the constituent gross weight become the water of the amount of 100 weight %.Etching solution constituent of the present invention can also comprise the etching inhibitor of 0.001～5 weight % with respect to whole etching solution constituent weight.
Fluoride salt is the principal constituent of etching glass substrate film, can use to have the material of semiconductor process with purity.As fluoride salt, be to comprise fluorine anion F
-Compound, can use Neutral ammonium fluoride NH
4F, ammonium bifluoride NH
4HF
2, Potassium monofluoride KF or lithium fluoride LiF etc., do not limit especially.In one embodiment of this invention, fluoride salt can comprise 0.1～30 weight % with respect to whole etching solution constituent weight, if the content of fluoride salt is less than 0.1 weight %, then etching speed reduces, if surpass 30 weight %, then cause that by over etching the uniformity coefficient of glass baseplate surface reduces.
Mineral acid has cleaning and the etched function that promotes glass substrate, can use to have the material of semi-conductor merit preface with purity.Can use nitric acid (Nitric acid) or sulfuric acid (Sulfuric acid) etc. as mineral acid.In one embodiment of this invention, mineral acid comprises 10～60 weight % with respect to whole etching solution constituent weight, if the content of mineral acid is less than 10 weight %, then etching speed reduces, if surpass 60 weight %, then cause that by over etching the uniformity coefficient (uniformity) of glass baseplate surface reduces.
The etching inhibitor is regulated etching speed for the performance of the fluorochemical that suppresses the etching principal constituent, has the function in the etch capabilities of strong acid condition decline subfluoride.The etching inhibitor can use phosphoric acid salt (Phosphate) and borate (Boric salt) etc., can use [M] H as phosphoric acid salt
2PO
4, [M]
2HPO
4Or (NH
4)
3PO
4(M=NH
4, K or Na), can still use boric acid (Boric acid) as borate.Above-mentioned etching inhibitor can be used alone or as a mixture, and does not limit especially.In one embodiment of this invention, do not comprise the etching inhibitor, or comprise 0.001～5 weight %, if use the etching inhibitor with the amount that surpasses 5 weight % with respect to whole etching solution constituent weight, then etching speed excessively reduces and activity time is elongated, thereby productivity reduces.The content of preferred etching inhibitor is 0.5～2 weight % with respect to whole etching solution constituent weight.
Tensio-active agent reduces the surface tension (Surface tension) and the contact angle (Contact angle) of etching solution, has to remove particle when the etching glass substrate, improves the function of film uniformity coefficient.Tensio-active agent according to one embodiment of the invention can be to constitute below 22 more than 4 by carbonatoms, preferably constitutes carbonatoms more than 12 below 18, but does not limit especially.
Tensio-active agent according to one embodiment of the invention uses the independent anion surfactant or the combination of nonionogenic tenside or anion surfactant/nonionogenic tenside.Anion surfactant can use fluoro-alkyl or hydrocarbon system row.Fluoro-alkyl can use fluoro-alkyl sulphonamide, fluoro-alkyl sulfonate, fluorinated alkyl sulfonate, fluoroalkyl phosphate series, does not limit especially.Can use alkyl sulfonamide or alkylsulfonate, alkylphosphonic series as hydrocarbon system row, not limit especially.Can use fluoro ethylene oxide (fluoro oxyethylene) derivative series or polyethylene oxide (Poly oxyethylene) derivative series as nonionogenic tenside.
In one embodiment of this invention, tensio-active agent can comprise 0.001～3 weight % with respect to whole etching solution constituent weight, if to use tensio-active agent less than 0.001 weight %, then can not reduce the surface tension and the contact angle of etching solution, if use with the amount that surpasses 3 weight %, then foam increases the weight of, and is used for increasing bad incidence with the obstacle key element during glass substrate etching.
And, be the aqueous solution according to the etching solution of one embodiment of the invention, must comprise water to the remnants of the weight ratio sum of above-mentioned essential composition, make the overall weight ratio become 100%.At this moment the water of Shi Yonging can be ultrapure water.
Below enumerate present embodiment and illustrate in greater detail the present invention.Expressing the formation shown in the following embodiment in advance finally is to understand invention in order to help, and is that technical scope of the present invention is restricted to the mode shown in the embodiment in no instance.
[embodiment, comparative example]
Made the etching solution constituent according to the composition (weight %) shown in the following table 1.Use ammonium bifluoride as fluoride salt, mineral acid 1 uses sulfuric acid, and 2 use nitric acid.Used boric acid as the etching inhibitor.
[table 1]
[test example]
Confirm performance for etching solution, carried out etching with spraying method to the comparative example of the embodiment of above-mentioned manufacturing and inventor's imagination.On the 0.5mm glass substrate, after the etching in 20 minutes of the above-mentioned etching solution of spraying, utilize ultrapure water to wash about 1 minute, use nitrogen to make its drying.
After finishing etching, the thickness of glass substrate and surface be by scanning electron microscopy measurement, its as a result photo be shown in Fig. 1 to Fig. 8.Surface tension is measured with tonometer (Tension meter), and contact angle is measured by contact angle measurement, and the foam extinction time is to measure whole times of eliminating of the foam that is produced in 1 minute afterwards with the nitrogen gas generation foam.Above-mentioned measuring result is shown in following table 2.
[table 2]
| Glass etching speed (μ m/ branch) | The glass substrate defective has/does not have | Surface tension (25 ℃ of mN/m) | Contact angle (degree °) | The foam extinction time (second) | |
| Comparative example 1 | 8 | Have | 54 | 10 | Do not produce foam |
| Comparative example 2 | 6 | Do not have | 66 | 15 | Do not produce foam |
| Comparative example 3 | 10 | Do not have | 70 | 18 | Do not produce foam |
| Comparative example 4 | 11 | Have | 70 | 18 | Do not produce foam |
| Comparative example 5 | 12 | Have | 60 | 17 | Do not produce foam |
| Comparative example 6 | 7 | Do not have | 72 | 18 | Do not produce foam |
| Embodiment 1 | 11 | Do not have | 48 | Below 5 | 15～20 |
| Embodiment 2 | 11 | Do not have | 30 | Below 5 | Below 15 |
According to the result of above-mentioned table 2, the defective of glass substrate has appearred when using the etching solution of the comparative example 1 comprise hydrofluoric acid to come etching.
In addition, as comparative example 2, if the content of mineral acid is few, then etching speed is slow.At mineral acid is 50 weight % when above, and the temperature height is about 35 ℃ when (comparative example 4 and 5), and etching speed is accelerated, but surface tension also raises, so produced defective at glass substrate.
At this moment, add by tensio-active agent and to reduce surface tension (embodiment 1 and 2), then under identical etching speed, also do not have the defective of glass substrate, so can shorten activity time.
According to the result of embodiment 1 and 2, particularly mix when using anion surfactant and nonionogenic tenside, surface tension and contact angle reduce more as can be known.
Under the situation of the embodiment 1 that adds tensio-active agent and 2, the foam extinction time illustrated below 20 seconds, did not produce the glass substrate etching obstacle that causes by foam as can be known.
Claims (8)
1. etching solution constituent, it is characterized in that, comprise with respect to whole etching solution constituent weight fluoride salt, 10～60 weight % of 0.1～30 weight % mineral acid, 0.001～3 weight % tensio-active agent and make the constituent gross weight become the water of the amount of 100 weight %.
2. etching solution constituent as claimed in claim 1 is characterized in that, above-mentioned etching solution constituent also comprises the etching inhibitor of 0.001～5 weight %.
3. etching solution constituent as claimed in claim 1 is characterized in that, above-mentioned fluoride salt is Neutral ammonium fluoride NH
4F, ammonium bifluoride NH
4HF
2, Potassium monofluoride KF or lithium fluoride LiF.
4. etching solution constituent as claimed in claim 1 is characterized in that, above-mentioned mineral acid is nitric acid or sulfuric acid.
5. etching solution constituent as claimed in claim 2 is characterized in that, above-mentioned etching inhibitor be selected from the group that constitutes by phosphoric acid salt and borate more than one, above-mentioned phosphoric acid salt is [M] H
2PO
4, [M]
2HPO
4Or (NH
4)
3PO
4, wherein, M=NH
4, K or Na.
6. etching solution constituent as claimed in claim 1, it is characterized in that, use independent anion surfactant, independent nonionogenic tenside or the combination of anion surfactant/nonionogenic tenside as above-mentioned tensio-active agent, above-mentioned anion surfactant is fluoro-alkyl sulphonamide, fluoro-alkyl sulfonate, fluorinated alkyl sulfonate, fluoroalkyl phosphate, alkyl sulfonamide, alkylsulfonate or alkylphosphonic, and above-mentioned nonionogenic tenside is fluoro ethylene oxide derivant or polyethylene oxide derivant.
7. liquid crystal indicator glass substrate etching method, it is characterized in that, in the liquid crystal indicator manufacturing, comprise: utilize with respect to whole etching solution constituent weight comprise fluoride salt, 10～60 weight % of 0.1～30 weight % mineral acid, 0.001～3 weight % tensio-active agent and make the constituent gross weight become the etching solution constituent of water of the amount of 100 weight %, clean simultaneously and the step of etching glass substrate.
8. liquid crystal indicator glass substrate etching method as claimed in claim 7 is characterized in that above-mentioned etching solution constituent also comprises the etching inhibitor of 0.001～5 weight %.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080034529 | 2008-04-15 | ||
| KR10-2008-0034529 | 2008-04-15 | ||
| KR1020080034529A KR20090109198A (en) | 2008-04-15 | 2008-04-15 | Etching and cleaning solution for glass in liquid crystal display device and etching method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101560058A true CN101560058A (en) | 2009-10-21 |
| CN101560058B CN101560058B (en) | 2012-03-21 |
Family
ID=41219063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910134360XA Active CN101560058B (en) | 2008-04-15 | 2009-04-14 | Cleaning and etching composition for glass substrate for liquid crystal display device and method for etching glass substrate using the same |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20090109198A (en) |
| CN (1) | CN101560058B (en) |
| TW (1) | TWI479012B (en) |
Cited By (22)
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|---|---|---|---|---|
| CN102311235A (en) * | 2011-08-09 | 2012-01-11 | 郑州恒昊玻璃技术有限公司 | Vacuum glass and manufacturing method thereof |
| CN104045241A (en) * | 2014-06-16 | 2014-09-17 | 刘存海 | Micro-fluorine glass etching and polishing method |
| CN104230175A (en) * | 2014-09-05 | 2014-12-24 | 长沙市宇顺显示技术有限公司 | Glass etching liquid and glass etching method |
| CN104761150A (en) * | 2015-03-16 | 2015-07-08 | 南昌欧菲光学技术有限公司 | Glass etching liquid and method of etching glass therewith, cover glass and preparation method thereof |
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| CN114620939B (en) * | 2020-12-09 | 2023-03-14 | Oppo广东移动通信有限公司 | Shell assembly, preparation method thereof and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4620934A (en) * | 1984-04-26 | 1986-11-04 | Allied Corporation | Soluble fluorinated cycloalkane sulfonate surfactant additives for NH4 |
| KR100248113B1 (en) * | 1997-01-21 | 2000-03-15 | 이기원 | Cleaning and etching compositions for electrical display device and substrate |
| US6284721B1 (en) * | 1997-01-21 | 2001-09-04 | Ki Won Lee | Cleaning and etching compositions |
| KR101299131B1 (en) * | 2006-05-10 | 2013-08-22 | 주식회사 동진쎄미켐 | Etching composition for tft lcd |
| CN101054265B (en) * | 2007-05-09 | 2010-05-19 | 信利半导体有限公司 | Glass etching liquid for flat panel display |
-
2008
- 2008-04-15 KR KR1020080034529A patent/KR20090109198A/en not_active Application Discontinuation
-
2009
- 2009-04-14 TW TW098112289A patent/TWI479012B/en active
- 2009-04-14 CN CN200910134360XA patent/CN101560058B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20090109198A (en) | 2009-10-20 |
| TW200951205A (en) | 2009-12-16 |
| CN101560058B (en) | 2012-03-21 |
| TWI479012B (en) | 2015-04-01 |
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