SG178308A1 - Microprocessing treatment agent and microprocessing treatment method using same - Google Patents
Microprocessing treatment agent and microprocessing treatment method using same Download PDFInfo
- Publication number
- SG178308A1 SG178308A1 SG2012008603A SG2012008603A SG178308A1 SG 178308 A1 SG178308 A1 SG 178308A1 SG 2012008603 A SG2012008603 A SG 2012008603A SG 2012008603 A SG2012008603 A SG 2012008603A SG 178308 A1 SG178308 A1 SG 178308A1
- Authority
- SG
- Singapore
- Prior art keywords
- component
- microprocessing
- film
- weight
- oxide film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 30
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 72
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 64
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 45
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 45
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000002253 acid Substances 0.000 claims abstract description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 10
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 7
- 125000001453 quaternary ammonium group Chemical group 0.000 claims abstract description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000005368 silicate glass Substances 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 160
- 238000005530 etching Methods 0.000 description 36
- 239000000758 substrate Substances 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 239000004094 surface-active agent Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000006386 neutralization reaction Methods 0.000 description 3
- 229920001223 polyethylene glycol Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- HSNJERRVXUNQLS-UHFFFAOYSA-N 1-(4-tert-butylphenyl)propan-2-one Chemical compound CC(=O)CC1=CC=C(C(C)(C)C)C=C1 HSNJERRVXUNQLS-UHFFFAOYSA-N 0.000 description 1
- FHCUSSBEGLCCHQ-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;fluoride Chemical compound [F-].C[N+](C)(C)CCO FHCUSSBEGLCCHQ-UHFFFAOYSA-M 0.000 description 1
- 108700028369 Alleles Proteins 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 101100501247 Caenorhabditis elegans elo-2 gene Proteins 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 125000005037 alkyl phenyl group Chemical group 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- BTBJBAZGXNKLQC-UHFFFAOYSA-N ammonium lauryl sulfate Chemical compound [NH4+].CCCCCCCCCCCCOS([O-])(=O)=O BTBJBAZGXNKLQC-UHFFFAOYSA-N 0.000 description 1
- 229940063953 ammonium lauryl sulfate Drugs 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical class OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- -1 fatty acid ester Chemical class 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- ASVMCHUOIVTKQQ-UHFFFAOYSA-M triethyl(methyl)azanium;fluoride Chemical compound [F-].CC[N+](C)(CC)CC ASVMCHUOIVTKQQ-UHFFFAOYSA-M 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Liquid Crystal (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Paints Or Removers (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention is directed to a microprocessingtreatment agent for use in fine processing of an object5 having a silicon nitride film and a silicon oxide film, which includes: at least one of a component (A) or a component (B); a component (C); and a component (D), wherein the component (A) is 0.01-20% by weight of hydrogen fluoride, the component (B) is 0.1-20% by weight of at10 least one of ammonium fluoride or quaternary ammonium fluoride, the component (C) is 1-80% by weight of at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid, the component (D) is water, and the total content of at least15 one of the component (A) or the component (B) and the component (C) is 90% by weight or less, based on the total amount of the microprocessing treatment agent.
Description
F-P11319SF (5G)
MICROPROCESSING TREATMENT AGENT AND MICROPROCESSING
TREATMENT METHOD USING SAME
[0001]
The present invention relates to a microprocessing treatment agent for use in etching, cleaning, or other processes in the manufacture of semiconductor devices, liquid crystal display devices, micromachines (micro electro mechanical systems (MEMS)) devices, etc., and to a microprocessing treatment method using such an agent. More specifically, the invention relates to a microprocessing treatment agent and a microprocessing treatment method for use in etching, cleaning, or other processing of a ; structure including a laminate of a silicon nitride film and a silicon oxide film.
[0002]
Among semiconductor device manufacturing processes, one of the most important processes is patterning and etching of a silicon oxide film, a silicon nitride film, a polysilicon film, a metal film, cr any other film formed on
F-P11319S8F (SG) the surface of a wafer into the desired shape. Wet etching, one of such etching techniques, has required a fine processing technique capable of selectively etching only an etching target film, [C003]
When a silicon oxide film is the target of etching, examples of such a fine processing technique include techniques using buffered hydrofluoric acid or hydrofluoric [ acid. Unfortunately, when such buffered hydrofluoric acid or hydrofluoric acid is used as a microprocessing treatment agent in the processing of a laminated Film composed of a silicon oxide film and a silicon nitride film, the silicon nitride film is also etched at the same time. As a result, patterning into the desired shape becomes difficult.
[0004]
For example, a microprocessing treatment method using an agent containing hydrofluoric acid and an anionic { surfactant such as ammonium lauryl sulfate can sclve such a problem and selectively etch only a silicon oxide film (see
Patent Document 1 listed below). Unfortunately, such a microprocessing treatment agent has very high foaming ability and therefore is not suitable for use in semiconductor device manufacturing processes. 0005] 25h For example, dynamic random access memory (DRAM) is a
F-P11319SF (3G) semiconductor device that is produced through wet etching with a microprocessing treatment agent. A DRAM cell includes one transistor and one capacitor. DRAM integration has increased about four times in the last three years. DRAM integration is generally achieved by integration of capacitors. Therefore, while the area occupied by a capacitor is reduced, an increase in capacitor area, a reduction in capacitor insulating film { thickness, and incorporation of a high dielectric constant film are made so that the capacitance required for stable storage operation can be ensured.
[0006]
A silicon oxide film has been used as the capacitor insulating film, and a reduction in the film thickness has been made. However, the reduction in the thickness of a silicon oxide film as a capacitor insulating film has reached a limit for 1 Mbit DRAM. In a 4 Mbit DRAM, : ‘therefore, a silicon nitride film is used as an insulating film. As integration has proceeded, a tantalum oxide film has also begun to be used.
[0007]
A 64 Mbit generation DRAM has a cylindrical capacitor structure. The problem described below occurs when a conventicnal etchant is used in a process that includes forming cylindrical capacitor lower electrodes and then
F-P113195F (SG) removing the formed silicon oxide film by wet etching to form a capacitor. {0008]
Specifically, after the capacitor lower electrodes are formed, the formed silicon oxide film is removed by wet etching, and rinsing with ultrapure water and drying are further performed. The drying process has the problem that due to the surface tension of water present between the / capacitor lower electrodes, a "leaning" phenomenon, in which the lower electrodes lean and come into contact with gach other, frequently occurs toe induce 2-bit failure.
Thus, Patent Document 2 listed below discloses a technique for forming a silicon nitride support film between capacitor lower electrodes. Patent Document 3 listed below also discloses a technique for forming a silicon nitride film as an insulating film for improving insulating properties from bit lines, and Patent Document 4 listed { below also discloses a technique for forming a silicon nitride film as an etching stopper film for the subsequent process of etching a silicon oxide film.
[0009]
In these semiconductor device manufacturing processes, the use of a conventional etchant has the problem that the silicon nitride support film disclosed in Patent Document 2Z, the silicon nitride film disclosed in Patent Document 3, or
F~-P113195F (8G) the silicon nitride film disclosed as an etching stopper film in Patent Document 4 is also etched together with the etching target.
PRIOR ART DOCUMENTS
PATENT DOCUMENTS
[0010]
Patent Document 1: Japanese Patent Application Laid- ( Open {JP-A) No. 2005-328067
Patent Document 2: JP-A No. 2003-297952
Patent Document 3: JP-A No. 10-98155
Patent Document 4: JP-A No. 2000-22112
[0011]
The invention has been made in view of the above ) problems, and an object of the invention is to provide a microprocessing treatment agent that allows selective fine processing of a silicon oxide film when a laminated film composed of at least a silicon oxide film and a silicon nitride film is subjected to fine processing, and to provide a microprocessing treatment method using such an agent.
F-P11319SF (SG)
MEANS FOR SOLVING THE PROBLEMS
[0012]
To solve the conventional problems, the inventors have made studies on microprocessing treatment agents and microprocessing treatment methods using them. as a result, the invention has been completed based on the finding that a microprocessing treatment agent prepared by adding a certain concentration of an acid to an aqueous solution / containing hydrogen fluoride or at least one of ammonium fluoride or quaternary ammonium fluoride makes it possible to perform selective fine processing of a silicon oxide film in the processing of a laminated film composed of the silicon oxide film and a silicon nitride film.
[0013]
Thus, to solve the above problems, the invention is directed tec a microprocessing treatment agent for use in fine processing of an object having a silicon nitride film { and a silicon oxide film, which includes: at least cone of a component (A) or a component (B); a component (C); and a component (D), wherein the component (A) is 0.01% by weight to 20% by weight of hydrogen fluoride, the compenent (B) is 0.1% by weight to 20% by weight of at least one of ammonium fluoride or quaternary ammonium fluoride,
F-P11319S8F (SG) the component (C) is 1% by weight to 80% by weight of at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid, the component (D) is water, and the total content of at least one of the component (A) or the component (B) and the component (C) is 20% by weight or less, based on the total amount of the ‘ microprocessing treatment agent.
[0014]
According to the feature, the composition containing a combination of at least one of the component (A) or the component (B) and the component (C) can have high etching selectivity of a silicon oxide film to a silicon nitride film (silicon oxide film/silicon nitride film). Therefore, when the micropreocessing treatment agent of the invention is used in fine processing of an object including a silicon ’ oxide film and a silicon nitride film stacked sequentially, selective fine processing of the silicon oxide film to the silicon nitride film can be achieved. This can improve the yield ratio in a semiconductor device manufacturing process.
[0015]
In the composition, the content of the acid as the component (C) is in the range of 1 to 80% by weight. When the lower limit is set at 1% by weight, the addition of the
F~P113195F (3G) acid is effective in making possible selective etching of a silicon oxide film. On the other hand, when the upper limit is set at 80% by weight, the reaction product produced by fine processing of a silicon oxide film can be smoothly dissclved in the microprocessing treatment agent, so that fine processing of the silicon oxide film can be facilitated. In this case, the increase in the viscosity of the microprocessing treatment agent can also be { suppressed, so that the ability of a rinse agent such as ultrapure water to remove the microprocessing treatment agent can be kept high. As used herein, the term "fine processing” is intended to include etching of a processing target film and cleaning of the surface of a processing target film. [GOle6]
The silicon oxide film is preferably any cne of a native oxide film, a thermal silicon oxide film, a non- { doped silicate glass film, a phosphorus-doped silicate glass film, a borcon-doped silicate glass film, a boron-and- phesphorus-doped silicate glass film, a TECS film, or a fluorine~containing silicon oxide film.
[0017]
To solve the above problems, the invention is also directed to a microprocessing treatment method, which includes performing selective fine processing of a silicon
F-P11319SF (5G) oxide film using the microprocessing treatment agent described above.
[0018]
The invention produces the advantageous effects as described below by the means described above.
Specifically, when a laminated film composed of at ( least a silicon oxide film and a silicon nitride film is subjected to fine processing, the invention makes possible selective fine processing of only the silicon oxide film, so that successful fine processing can be achieved, for example, in the manufacture of semiconductor devices, liquid crystal display devices, micromachine devices, etc.
[0019] ) An embodiment of the invention is described below.
A microprocessing treatment agent according to an embodiment of the invention contains at least one of the component (A} or (B) below and contains the components (C) and (D) below.
Component (A): 0.01% by weight to 20% by weight of hydrogen fluoride
Component (B): 0.1% by weight to 20% by weight of at
F-P11319SE (SG) least one of ammonium fluoride or guaternary ammonium fluoride
Component (C}: 1% by weight to 80% by weight of at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid
Component (D): water 10020] /
The content of hydrogen flucride as the component (A) is in the. range of 0.01 fo 20% by weight, preferably in the range of 0.1 to 10% by weight, based on the total amount of the microprocessing treatment agent. If the hydrogen fluoride content is less than 0.01% by weight, the hydrogen fluoride concentration will be difficult to control so that there may be significant variations in the etch rate for a silicon oxide film. If the hydrogen fluoride content is more than 20% by weight, the etch rate for a silicon oxide 0 film will be too high so that the etching contreollability may be low. In addition, hydrogen fluoride gas may vaporize significantly so that the microprocessing treatment agent may be difficult to handle.
[0021]
The component (B) only has to include at least one of ammonium fluoride or quaternary ammonium fluoride.
Examples of the quaternary ammonium fluoride include, but
F-P11319SF (SG) are not limited to, tetramethylammonium fluoride, tetraethylammonium fluoride, triethylmethylammonium fluoride, and choline fluoride.
[0022]
The content of the component (B) is in the range of 0.1 to 20% by weight, preferably in the range of 0.5 to 10% by weight, based on the total amount of the microprocessing treatment agent. If the content of the component (B) is less than 0.1% by weight, the concentration of the component (B) in the fine processing agent will be difficult to control so that there may be significant variations in the etch rate for a silicon oxide film. If the content of the component (B) is more than 20% by weight, it will be close to the saturation solubility of the component (B) so that crystals may precipitate out of the microprocessing treatment agent depending on the liquid ; temperature.
[0023]
The component (C}) is at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid. Among these acids, sulfuric acid is preferred from the viewpoint of the selectivity of a silicon oxide film to a silicon nitride film. 0024)
F~-P11319SF (SG)
The content of the component (C) is in the range of 1 to 80% by weight, preferably in the range of 40 to 70% by weight, based on the total amount of the microprocessing treatment agent. If the content cf the component (C) is less than 1% by weight, the addition of the acid may fail to be effective, so that selective etching of a silicon oxide film or the like may be difficult to achieve. If the content of the component (C) is more than 80% by weight, ; the reaction product produced by the etching of a silicon oxide film may be inhibited from dissolving in the microprocessing treatment agent, so that the etching of the silicon oxide film may be inhibited. In addition, the viscosity of the microprocessing treatment agent may increase, which may reduce the ability of a rinse agent such as ultrapure water to rinse and remove the microprocessing treatment agent.
[0025] {
The total content of at least one of the component {A) or the component (B) and the component (CT) is 90% by weight or less, preferably 70% by weight or less, based on the total amount of the microprocessing treatment agent.
When the teotal content of at least one of the component (A) or the component (B) and the component (C) is 90% by weight or less, the reaction product produced by the etching of a silicon oxide film can be smoothly dissolved in the
F-P113193F (5G) microprocessing treatment agent, so that variations in the etch rate for a silicon oxide film can be reduced. In addition, the increase in the viscosity of the microprocessing treatment agent can be suppressed, which can increase the ability of a rinse agent such as ultrapure water to remove the microprocessing treatment agent.
[0026]
The microprocessing treatment agent according to an : embodiment of the invention may also contain a third component. For example, the third component may be a surfactant. For example, when the microprocessing treatment agent has a pH of less than 2, the surfactant is preferably, but not limited to, a nonionic surfactant such as polyethylene glycol alkyl ether, polyethylene glycol alkyl phenyl ether, or polyethylene glycol fatty acid ester.
When the microprocessing treatment agent has a pH of 2 or . more, the surfactant is preferably at least one selected from the group consisting of an aliphatic alcohol, an aliphatic carboxylic acid, a hydrofluorocalkyl alcohol, a hydrofluorocalkylcarboxylic acid, a hydrofluoroalkylcarboxylic acid salt, an aliphatic amine salt, and an aliphatic sulfonic acid. When the microprocessing treatment agent has a pH of 2 or more, the microprocessing treatment agent may be sclid or liquid.
[0027]
F-P11319SF (SG)
The content of the surfactant is preferably in the range of 0.001 to 0.1% by weight, more preferably in the range of 0.003 to 0.05% by weight. The added surfactant can inhibit roughening of the surface of a silicon nitride film, a semiconductor substrate, or any other material during an etching process. In ultra large scale integration, conventional microprocessing treatment agents are more likely to remain locally on a finely patterned ; surface of a semiconductor substrate, so that uniform etching becomes more difficult when the resist spacing is set at about 0.5 um cor less. In contrast, when the surfactant-containing microprocessing treatment agent according to the invention is used as an etchant, the etchant has improved wettability to the surface of a semiconductor substrate, so that the in-plane uniformity of etching across the substrate is improved. If the content is less than 0.001% by weight, the surface tension of the { microprocessing treatment agent may be reduced insufficiently, so that the effect of improving wettability may be insufficient. If the content is more than 0.1% by weight, not only the resulting effect may fail to be proportional to the content, but also defoaming ability may be degraded so that fecam may adhere to the etched surface to cause uneven etching or that foam may enter fine spaces to cause etching failure.
F-P11319SF (5G)
[0028]
In an embodiment of the invention, the microprocessing treatment agent may further contain a non- surfactant additive as long as the effects are not inhibited. Examples of such an additive include hydrogen peroxide and a chelating agent.
[0029]
The microprocessing treatment agent according to an embodiment of the invention may be produced by mixing the components (A), (B}, (C), and (D) in any order. When a hydroxide is used as a raw material for the component (B), the component (B) can be obtained by properly adding hydrofluoric acid to the hydroxide so that a fluoride can : CT be formed by neutralization. Alternatively, a hydroxide as a raw material may be added to a solution containing at least hydrogen fluoride as the component (A) without ; neutralization with hydrofluoric acid, so that a solution containing the component (RB) can be formed as a result of partial neutralization of the hydrogen fluoride. In such a process, for example, the hydroxide as a raw material for the component (B) may be ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, triethylmethylammonium hydroxide, or a hydroxide of an ammonium such as choline.
[0030]
F-P11319SF (SG)
Next, a description is given of a microprocessing treatment method using the microprocessing treatment agent according to an embodiment of the invention, in which wet etching is used as an example.
[0031]
For example, the microprocessing treatment agent according to an embodiment of the invention is used to process an object including a substrate and a silicon / nitride film and a silicon oxide film, which are formed on the substrate. More specifically, such an object includes a substrate and a silicen nitride film and a silicon oxide film, which are provided on the same surface of the substrate, a substrate and a laminated film which includes a silicon nitride film and a silicon oxide film stacked in this order on the substrate, or a substrate and a laminated film which includes a silicon oxide film and a silicon nitride film stacked in this order on the substrate. The { silicon oxide film may be a native oxide film, a thermal silicon oxide film, a non-doped silicate glass film, a phosphorus-doped silicate glass film, a boron-doped silicate glass film, a boron-and-phosphorus-doped silicate glass film, a TEOS film, or a fluorine-containing silicon oxide film.
[0032]
In an embodiment of the invention, the
F-P11I3198F (8G) microprocessing treatment agent may be used in various wet etching methods. Etching methods include immersion methods, spraying methods, etc., and the microprocessing treatment agent of the invention may be used in any of these methods.
Immersion methods are preferred, because vaporization- induced changes in the composition of the microprocessing treatment agent are small in the etching process.
[0033] . When the microprocessing treatment agent is used as an etchant, the etching temperature (the temperature of the microprocessing treatment agent) is preferably in the range of 5 to 50°C, more preferably in the range of 15 to 35°C, even more preferably in the range of 20 to 30°C. Within the above range, vaporization of the microprocessing treatment agent can be suppressed so that changes in composition can be prevented. At high temperature, the ; etch rate becomes difficult to control due to the - evaporation of the microprocessing treatment agent, and at low temperature, some components of the microprocessing treatment agent are more likely to crystaliize so that the etch rate can disadvantageously decrease or particles in the liquid can disadvantageocusly increase. When the etching temperature is in the above range, these disadvantages can also be avoided. Depending on the : etching temperature, the etch rate varies from one film to
F-P11319SF (SG) another, and therefore, the difference between the etch rate for a silicon oxide film and the etch rate for a silicon nitride film may be influenced in some cases.
[0034]
In an embodiment of the invention, the microprocessing treatment agent preferably has an etch rate in the range of 1 to 10,000 nm/minute, more preferably in the range of 15 te 3,000 nm/minute, for a silicon oxide ‘ film at 25°C. If the etch rate is less than 1 nm/minute, fine processing such as etching may take a long time so that production efficiency may be deteriorated. If it is more than 10,000 nm/minute, a reduction in film thickness controllability after the etching or roughening of the substrate surface (the opposite surface from the surface on which a silicon oxide film or the like is formed) may be significant, so that the yield may be lowered.
[0035]
Hereinafter, preferred examples of the invention are illustratively described in detail. It will be understood that the materials, the amounts, and so on described in the examples are illustrative only and are not intended to limit the scope of the invention, unless otherwise specified.
F-P11319SF (SG)
[0036] (Etch Rates for Silicon Oxide Film and Silicon
Nitride Film)
An optical film thickness meter (Nanospec 6100 manufactured by Nanometrics Japan LTD) was used to measure the thicknesses of a silicon oxide film and a silicon nitride film before and after etching, and to determine changes in film thickness caused by the etching. The measurement was repeatedly performed for three different etching times when the etch rates were calculated.
Substrates on which a silicon nitride film and a silicon oxide film were formed, respectively, were used as the objects to be processed.
[0037] {Example 1)
Eighty-three parts by weight of sulfuric acid (26% by ; weight in concentration, manufactured by Mitsubishi
Chemical Corporation) was added to a solution of a mixture of 10 parts by weight of hydrogen fluoride (high-purity grade for semiconductor applications, 50% by weight in concentration, manufactured by Stella Chemifa Corporation) and 7 parts by weight ultrapure water, and mixed by stirring. Subsequently, the mixture solution was controlled to a temperature of 25°C and allowed to stand for 3 hours. Thus, an etchant (microprocessing treatment
F-P113195¥ (8G) agent) was prepared which contained 5% by weight of hydrogen fluoride and 80% by weight of sulfuric acid. [C038]
Subsequently, the substrates on which the silicon nitride film and the silicon oxide film were formed, respectively, were immersed in the etchant, and etch rates were measured for a BPSG film as the silicon oxide film and for the silicon nitride film. In addition, etch rate ; selectivity (silicon oxide film/silicon nitride film) was also evaluated. In the measurement, the temperature of the etchant was set at 25°C. The results are shown in Table 1 below.
[0039] (Examples 2 to 9)
The etchants of Examples 2 to 9 were prepared as in
Exampie 1, except that the content of the component (A) (hydrogen fluoride), the content and type of the component { (B) , and the content and type of the component (C) were changed as shown in Table 1. Using the etchant obtained in each example, etch rates for the BPSG film and the silicon nitride film, and etch rate selectivity (silicon oxide film/silicon nitride film) were also evaluated. The results are shown in Table 1 below.
[6040] (Comparative Examples 1 and 2)
F-P11319SF (SG)
The etchant of Comparative Example 1 was prepared as in Example 1, except that an acid as the component (C} was not added as shown in Table 1. The etchant of Comparative
Example 2 was prepared as in Example 7, except that an acid as the component (C) was not added as shown in Table 1.
Using the etchant obtained in each comparative example, etch rates for the BPSG film and the silicon nitride film, and etch rate selectivity (silicon oxide film/silicon : nitride film) were also evaluated as in Example 1. The results are shown in Table 1 below.
[0041] (Results) : As 1s also evident from Table 1 below, when the etchant according each of Comparative Examples 1 and 2 not containing an acid as the component (C) was used, selective etching of the BPSG film was suppressed so that it was not possible to increase the etch rate selectivity of the silicon oxide film to the silicon nitride film {silicon oxide film/silicon nitride film).
[0042]
In contrast, it was demonstrated that when the etchant used contained at least one of the component (A) or the component (B) and the component (C) according to each of Examples 1 to 9, the etch rate for the silicon oxide film was able to be selectively increased, so that the etch
F-P11319SF (SG) rate selectivity of the silicon oxide film tc the silicon nitride film (silicon oxide film/silicon nitride film) was successfully increased.
[0043]
— o
[4] ~T oF I wna wo Lh 84 i
Hoel BY A i i a aH a i [xy Hes a on o a Wo a} =) A Wy qe an wa 2 onl ~~ oy [a] fad © o™ eq ow ~—
SN SL aT — \o wy 0 © Re] ™ =~ — —
OTHE
— 20 Hu - ™ Hoan e — “mw — ~~ ny
I =| —
I= Bao El 0
ABA Ele || =fe ol|l=|lelo ll a
Haw 5 | © Ln = =r oy w ry! = — " x a Blo © 0 o I < w - uy — ol
Ona g | © 0) < [53] ™ oF [2g] = Wo “ © @ ~|lapo| ZF | — ~ 2 o~ — 2 oly ZA od [ 3 om xl = ~ o
To — oom q i mg + q 0-4 Bl 2 0 wd o 0 —l ay —f ow 1 ol = on | m ao] 2 4 o ™ ~~ . ~ ~ i I ~
HAW E a ~ . wg od o 0 -— b= Ii
A df ” oJ of o wy = oO oS & EN ~ Irs} — g 51038 © ! ! . a ) 0 1 0 0 0, ; ort 0 T -A & lo qm a |e U u Y U
Oo {-— o H s | Ea! Ka! 0 wo 0 «© {9 ula ojo © HOY oH old ola Tl on ol Seba dba dl oy 13a] S dls ala a] 3a) a > were ofa, ol 5 jw ols ofl olo ula uj
Ee = ®f0 ou of 7 bd ©| 0] ©] 0 of wu 3 a] oC p [2 = = jo] = 0 T £ ale 0 wn ° 0 al ay = St js in ol 0 -
H
SE ae} 2 + | 2 ww | w IT} - & 3 al 38 : 8 I { + te i 0 ! is C 28 of
S | EES g §olg els glsd g 9 3 o Gl 5A 3 o oO o Heed A Py gy a 0, : | g Hla Hla lao oo > 0 ola ole Ge 4] 0 0
Eu 5 3a 0 7 — —| mo J] hes wy wis Bis § [= 2.alt a 0 Gle 3
Ee Et o ao § | sz gl gal «| o ox ao gin |lwmipwm lg . — ™ mf on fo 0, ~~ 0 = zo oO I g Ned pT oO | Ew : —_ a EE 1 { ™ ™ <t ny 0 ~ o dD feed 1 rf rl a | a © @ O o [0] [} o 0 (+ ole ae —~ alleles lala] a] asad
Q g g & g g g £ 5 g [od Elo 2
Po a ad © a 5 a © © Gg [ogo a x x 0 a] 5 E » Ea » 2 X|E X
E~ A @ |W ||| 8 |d| dd] Ed [ode a 0 0
F-P11319SF (SG)
[0044] (Examples 10 to 14)
The etchants of Examples 10 to 14 were prepared as in
Example 1, except that the content of the component (A) (hydrogen fluoride), the content and type of the component (B}, and the content and type of the component (C) were changed as shown in Table 2. Using the etchant obtained in each example, etch rates for a non-doped silicate glass ( film as the silicon oxide film and for the silicon nitride film, and etch rate selectivity (silicon oxide film/silicon nitride film) were also evaluated as in Example 1. The results are shown in Table 2 below.
[0045] (Comparative Examples 3 and 4)
The etchant of Comparative Example 3 was prepared as in Example 10, except that the component (C)} was not added as shown in Table 2. The etchant of Comparative Example 4 { was prepared as in Example 11, except that the component (B) was not added as shown in Table 2. Using the etchant obtained in each comparative example, etch rates for the non-doped silicate glass film and the silicon nitride film, and etch rate selectivity (silicon oxide film/silicon nitride film) were also evaluated as in Example 1. The results are shown in Table 2 below.
[0046]
F-P11319SF (SG) {Results)
As is also evident from Table 2 below, when the etchant according each of Comparative Examples 3 and 4 not containing an acid as the component (C) was used, selective etching of the non~doped silicate glass film was suppressed so that it was not possible to increase the etch rate selectivity of the silicon oxide film to the silicon nitride film (silicon oxide film/silicon nitride film).
[0047]
In contrast, it was demonstrated that when the etchant used contained at least one of the component (A) or the component (B) and the component (C) according to each of Examples 10 to 14, the etch rate for the silicon oxide film was able to be selectively increased, so that the etch rate selectivity of the silicon oxide film to the silicon nitride film (silicon oxide film/siliceon nitride film) was / successfully increased. oo [0048]
— iQ
Toe a oo 8H = SHwo by groov : : | ~] aj | ©} oc wn bE {| = ~ oO — Eo ™m > So oN? | dw] =] 2]9 i Ha EY lo) Boao — © pwd py
A f i
I =| | 1 [x4 SoHE a gH gd 2 on - cad 21898) |S
Praoagl-a lio] 2falz]|3 0 |= nal E a on 0 = © | — sole Saa oS : ga |Z Tox
HO o oO 1 co ] us — + © — ooo = 80 slo
O.E = . — yd ge "a + is 0 [a 0 oa ~
CoE pl { o c of i m i 3 w _ D *1le © < a 0 on = g i 9 i
B 0 ® oO 1 ce . g
Q, ° ] 5 ojo u 0 vo 5 a fa Fa fm =m © HOW dw glu o 0 0, o |3Aalz als als — > Fo |e Uw Ow ofw oo ™~N & 0 ela ala sia ®
Ee 3 = =
Za 8 {a [on = © i a ol 2 o —_ of oO << _ 5 2 1 | 3 Sw a =z oL 0
Lo { o 0 ] i 5, a i 5 9, g go 5gl8¢ 0 5 U o o
O @ a A Af -A a, gow a ufe wg
Bi 0 © 0 ofc oc
E LE EE i TE wl ial wr ] 13 | , aw § ¢T — :
I I - ssl 58 |21g]w Slaw g 3 = 8 oy .
D — ™ oo oN aA a] = 3 Eel lo ofp © > S131 51 8 8 sls 0 cleglelelgizdled
G Io od 5 g EEE — } CHO
Claims (3)
1. A microprocessing treatment agent for use in fine processing of an object having a silicon nitride film and a silicon oxide film, comprising: at least one of a component (A) or a component (B); a component (C); and a component (D), wherein the component (A) is 0.01% by weight to 20% by weight ( of hydrogen fluoride, the component (B) is 0.1% by weight to 20% by weight of at least one of ammonium fluoride or quaternary ammonium fluoride, the component (C) is 1% by weight to 80% by weight of at least one acid selected from the group consisting of hydrochloric acid, nitric acid, sulfuric acid, and phosphoric acid,
. the component (DI) is water, and ) the total content of at least cone of the component (A) or the component (B) and the component (C) is 90% by weight or less, based on the total amount of the microprocessing treatment agent.
2. The microprocessing treatment agent according to claim 1, wherein the silicon oxide film is any one of a native oxide film, a thermal silicon oxide film, a non-
F~P113195F (5G) doped silicate glass film, a phosphorus-doped silicate giass film, a boron-doped silicate glass film, a boron-and- phosphorus-doped silicate glass film, a TEOS film, or a fluorine-containing silicon oxide film.
3. A microprocessing treatment method, comprising performing selective fine processing of a silicon oxide film using the microprocessing treatment agent according to ¢ claim 1 or 2.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009186741A JP5400528B2 (en) | 2009-08-11 | 2009-08-11 | FINE PROCESSING AGENT AND FINE PROCESSING METHOD USING THE SAME |
| PCT/JP2010/063480 WO2011019015A1 (en) | 2009-08-11 | 2010-08-09 | Microprocessing treatment agent and microprocessing treatment method using same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG178308A1 true SG178308A1 (en) | 2012-03-29 |
Family
ID=43586191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012008603A SG178308A1 (en) | 2009-08-11 | 2010-08-09 | Microprocessing treatment agent and microprocessing treatment method using same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5400528B2 (en) |
| KR (1) | KR20120041785A (en) |
| CN (1) | CN102473636B (en) |
| SG (1) | SG178308A1 (en) |
| WO (1) | WO2011019015A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5894369B2 (en) * | 2011-02-03 | 2016-03-30 | ステラケミファ株式会社 | Cleaning liquid and cleaning method |
| CN104745195A (en) * | 2013-12-31 | 2015-07-01 | 苏州同冠微电子有限公司 | Dyeing solution for PN junction of VDMOS and application method thereof |
| JP6433730B2 (en) | 2014-09-08 | 2018-12-05 | 東芝メモリ株式会社 | Semiconductor device manufacturing method and semiconductor manufacturing apparatus |
| CN104465324A (en) * | 2014-11-28 | 2015-03-25 | 上海芯亮电子科技有限公司 | Discrete component manufacturing method |
| US10147619B2 (en) | 2015-08-27 | 2018-12-04 | Toshiba Memory Corporation | Substrate treatment apparatus, substrate treatment method, and etchant |
| CN105808028A (en) * | 2016-03-16 | 2016-07-27 | 意力(广州)电子科技有限公司 | Capacitor unit, capacitive screen and preparation method therefor |
| US10920179B2 (en) | 2016-11-10 | 2021-02-16 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning solution and method for cleaning substrate |
| US20220115239A1 (en) * | 2020-04-10 | 2022-04-14 | Hitachi High-Tech Corporation | Etching method |
| CN114761519B (en) * | 2021-05-20 | 2023-06-30 | 斯泰拉化工公司 | Micromachining agent and micromachining method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3889271B2 (en) * | 2000-12-15 | 2007-03-07 | 株式会社東芝 | Manufacturing method of semiconductor device |
| JP2005167181A (en) * | 2003-11-10 | 2005-06-23 | Daikin Ind Ltd | Etching liquid for low-k film and method of etching low-k film |
| JP2006179513A (en) * | 2004-12-20 | 2006-07-06 | Stella Chemifa Corp | Microfabrication processing agent and microfabrication processing method using same |
| US7727415B2 (en) * | 2004-12-20 | 2010-06-01 | Stella Chemifa Corporation | Fine treatment agent and fine treatment method using same |
| JP2008541447A (en) * | 2005-05-13 | 2008-11-20 | サッチェム，インコーポレイテッド | Selective wet etching of oxides |
| KR100860367B1 (en) * | 2006-08-21 | 2008-09-25 | 제일모직주식회사 | Wet etching solution having high selectivity for silicon oxide |
| JP2010109064A (en) * | 2008-10-29 | 2010-05-13 | Tosoh Corp | Etching method |
-
2009
- 2009-08-11 JP JP2009186741A patent/JP5400528B2/en active Active
-
2010
- 2010-08-09 CN CN201080035331.9A patent/CN102473636B/en active Active
- 2010-08-09 WO PCT/JP2010/063480 patent/WO2011019015A1/en active Application Filing
- 2010-08-09 SG SG2012008603A patent/SG178308A1/en unknown
- 2010-08-09 KR KR1020127005875A patent/KR20120041785A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| CN102473636A (en) | 2012-05-23 |
| CN102473636B (en) | 2015-06-03 |
| WO2011019015A1 (en) | 2011-02-17 |
| KR20120041785A (en) | 2012-05-02 |
| JP5400528B2 (en) | 2014-01-29 |
| JP2011040576A (en) | 2011-02-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG178308A1 (en) | Microprocessing treatment agent and microprocessing treatment method using same | |
| EP2434536B1 (en) | Etching method | |
| KR100248113B1 (en) | Cleaning and etching compositions for electrical display device and substrate | |
| JP5023114B2 (en) | Etching composition for copper and copper / molybdenum or copper / molybdenum alloy electrodes of liquid crystal display devices | |
| KR100885795B1 (en) | Polysilicon planarization solution for planarizing low temperature poly-silicon thin film panels | |
| CN1934233B (en) | Cleaning solutions and etchants and methods for using same | |
| US7507350B2 (en) | Etching liquid composition | |
| TW200809952A (en) | Wet etch suitable for creating square cuts in SI and resulting structures | |
| US20110297873A1 (en) | Etching solution compositions for metal laminate films | |
| US4230522A (en) | PNAF Etchant for aluminum and silicon | |
| CN101560058A (en) | Cleaning and etching composition for glass substrate for liquid crystal display device and method for etching glass substrate using the same | |
| KR20140078924A (en) | Composition for etching metal layer and method for etching using the same | |
| US7727415B2 (en) | Fine treatment agent and fine treatment method using same | |
| CN108033686A (en) | A kind of etching liquid for thinning glass substrate | |
| CN106467969A (en) | Array substrate for display device manufacture method, etchant and engraving method | |
| CN115305472A (en) | Etching solution composition and etching method using same | |
| CN114891509A (en) | High-selectivity buffer oxide etching solution | |
| JP5401647B2 (en) | Fine processing agent and fine processing method | |
| CN105820819A (en) | Etching solution composition for indium oxide layer and method for etching copper-based metal layer using the same | |
| JP5279301B2 (en) | Fine processing agent and fine processing method | |
| CN117187852B (en) | Preparation method of low-surface-tension long-acting developer | |
| US20240124775A1 (en) | Silicon etching liquid, and method for producing silicon devices and method for processing substrates, each using said etching liquid | |
| KR20140042121A (en) | Etchant composition for etching double layer of metal layer and indium oxide layer and method for etching using the same | |
| JP2010067982A (en) | Etching solution | |
| CN116218528A (en) | High-selectivity and low-foam etching solution |