CN104465324A - Discrete component manufacturing method - Google Patents
Discrete component manufacturing method Download PDFInfo
- Publication number
- CN104465324A CN104465324A CN201410714323.7A CN201410714323A CN104465324A CN 104465324 A CN104465324 A CN 104465324A CN 201410714323 A CN201410714323 A CN 201410714323A CN 104465324 A CN104465324 A CN 104465324A
- Authority
- CN
- China
- Prior art keywords
- wafer
- brilliant back
- manufacture method
- separate elements
- surface roughness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 33
- 238000000227 grinding Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 8
- 230000003746 surface roughness Effects 0.000 claims abstract description 8
- 230000007547 defect Effects 0.000 claims abstract description 6
- 238000001465 metallisation Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000011946 reduction process Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 235000011149 sulphuric acid Nutrition 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a discrete component manufacturing method which includes the following steps that firstly, a wafer is thinned through a common grinding method, and a first part of the wafer is ground off; secondly, the wafer is thinned through a fine grinding method, and a second part of the wafer is ground off; thirdly, uniform surface roughness is formed on the wafer processed in the second step in a wet etching mode, and slight defects on the surface of a wafer back are removed through a mixed solution; fourthly, a metal deposition process is applied to the wafer back, and wafer back metal is deposited on the wafer processed in the third step. By means of the method, uniformity of wafer back surface roughness is better, the risk of wafer back metal stripping is reduced, and the production loss or the component quality problem is reduced.
Description
Technical field
The present invention relates to a kind of manufacture method of element, particularly, relate to a kind of manufacture method of separate elements.
Background technology
Brilliant back of the body reduction process and brilliant back of the body metal deposition process is needed in the manufacture process of separate elements, but Chang Yinjing carries on the back mechanical polishing and causes trickle slight crack or deep layer lattice damage (as shown in Figure 5) on crystalline substance back of the body reduction process, form structural defect, cause brilliant back of the body metal peel off in successive process and cause production loss or element quality problem.
Summary of the invention
For defect of the prior art, the object of this invention is to provide a kind of manufacture method of separate elements, it obtains the uniformity of better brilliant back surface roughness (roughness) and reduces the risk of brilliant back of the body metal-stripping (peeling), thus reduces production loss or element quality problem.
According to an aspect of the present invention, a kind of manufacture method of separate elements is provided, it is characterized in that, comprise the following steps:
Step one, common grinding mode is thinning to wafer, and grinding wafer is fallen Part I;
Step 2, fine ground mode is thinning to wafer, and grinding wafer is fallen Part II;
Step 3, the wafer handled well in step 2 by Wet-type etching mode forms uniform outer surface roughness; The defect of trickle brilliant back surface is removed by hybrid solution;
Step 4, implements brilliant back of the body metal deposition process, deposition brilliant back of the body metal on the wafer after step 3 process.
Preferably, the thickness of described Part I is greater than the thickness of Part II.
Preferably, described hybrid solution comprises H2SO4, HNO3, HF, water, interfacial agent.
Compared with prior art, the present invention has following beneficial effect: the present invention's crystalline substance back of the body reduction process adopts the decline processing procedure of the thinning processing procedure of fine lapping and Wet-type etching of mixing machinery obtain the uniformity of better brilliant back surface roughness (roughness) and reduce the risk of brilliant back of the body metal-stripping (peeling), thus reduces production loss or element quality problem.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the schematic diagram of the invention process step one.
Fig. 2 is the schematic diagram of the invention process step 2.
Fig. 3 is the schematic diagram after the invention process step 2.
Fig. 4 is the schematic diagram of the invention process step 4.
Fig. 5 before being the brilliant back of the body thinning after effect schematic diagram.
Fig. 6 is the effect schematic diagram after the invention process step one and step 2.
Fig. 7 is the effect schematic diagram after the invention process step 3.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art and understand the present invention further, but not limit the present invention in any form.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made.These all belong to protection scope of the present invention.
As shown in Figures 1 to 4, the manufacture method of separate elements of the present invention comprises the following steps:
Step one, common grinding mode is thinning to wafer, grinds away Part I (dotted portion of Fig. 1) 2 by wafer 1; The lapping mode of step one can be identical with former lapping mode; After this grinding, wafer rear is very coarse, height fluctuating size neither with, often have the surface tear of weight not grade.
Step 2, fine ground mode is thinning to wafer, grinds away Part II (dotted portion of Fig. 2) 3 by wafer 1, after grinding, wafer 1 has the defect 4 (as shown in Figure 6) of trickle brilliant back surface; The thickness of Part I 2 is greater than the thickness of Part II 3; Fine ground mode can reach the abrasive grains degree of 1500-3000Grit.Step 2 makes wafer rear smooth surface, and without the destruction that physics scratches, under different light rays, still cannot see the ring of light of scroll, light reflection is very even.
Step 3, the wafer handled well in step 2 by Wet-type etching mode forms uniform outer surface roughness; Removed the defect 4 (as shown in Figure 7) of trickle brilliant back surface by hybrid solution, to increase the contact area of itself and successive process back metal, to increase its degree of adhesion, play the effect avoiding back metal peeling.Hybrid solution (according to weight percent meter) comprises H2SO4 (80%-90%), HNO3 (10%-20%), HF (1%-5%), water (5%-10%), interfacial agent (1%-3%); Interfacial agent can be gel, BOE etc.
Step 4, implements brilliant back of the body metal deposition process, deposition brilliant back of the body metal 5 on the wafer 1 namely after step 3 process.
The present invention's crystalline substance back of the body reduction process adopts the decline processing procedure of the thinning processing procedure of fine lapping and Wet-type etching of mixing machinery obtain the uniformity of better brilliant back surface roughness (roughness) and reduce the risk of brilliant back of the body metal-stripping (peeling), thus reduces production loss or element quality problem.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (3)
1. a manufacture method for separate elements, is characterized in that, comprises the following steps:
Step one, common grinding mode is thinning to wafer, and grinding wafer is fallen Part I;
Step 2, fine ground mode is thinning to wafer, and grinding wafer is fallen Part II;
Step 3, the wafer handled well in step 2 by Wet-type etching mode forms uniform outer surface roughness; The defect of trickle brilliant back surface is removed by hybrid solution;
Step 4, implements brilliant back of the body metal deposition process, deposition brilliant back of the body metal on the wafer after step 3 process.
2. the manufacture method of separate elements according to claim 1, is characterized in that, the thickness of described Part I is greater than the thickness of Part II.
3. the manufacture method of separate elements according to claim 1, is characterized in that, described hybrid solution comprises H
2sO
4, HNO
3, HF, water, interfacial agent.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410714323.7A CN104465324A (en) | 2014-11-28 | 2014-11-28 | Discrete component manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410714323.7A CN104465324A (en) | 2014-11-28 | 2014-11-28 | Discrete component manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104465324A true CN104465324A (en) | 2015-03-25 |
Family
ID=52911199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410714323.7A Pending CN104465324A (en) | 2014-11-28 | 2014-11-28 | Discrete component manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465324A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112053936A (en) * | 2020-09-22 | 2020-12-08 | 广州粤芯半导体技术有限公司 | Wafer back surface roughening control method and power device manufacturing method |
| CN114016042A (en) * | 2021-11-25 | 2022-02-08 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | Acidic etching solution |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101327572A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Technique for thinning back side of silicon wafer |
| US20090246955A1 (en) * | 2008-03-26 | 2009-10-01 | Masayuki Kanazawa | Wafer processing method and wafer processing apparatus |
| CN101981664A (en) * | 2008-03-31 | 2011-02-23 | Memc电子材料有限公司 | Methods for etching the edge of a silicon wafer |
| CN102044428A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Method for thinning wafer |
| CN102082069A (en) * | 2009-11-27 | 2011-06-01 | 北大方正集团有限公司 | Method for processing back surface of wafer |
| CN102379028A (en) * | 2009-03-31 | 2012-03-14 | 大金工业株式会社 | Etching liquid |
| CN102473636A (en) * | 2009-08-11 | 2012-05-23 | 斯泰拉化工公司 | Microprocessing treatment agent and microprocessing treatment method using same |
| US20140175620A1 (en) * | 2012-12-21 | 2014-06-26 | Lapis Semiconductor Co., Ltd. | Semiconductor device fabrication method and semiconductor device |
-
2014
- 2014-11-28 CN CN201410714323.7A patent/CN104465324A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101327572A (en) * | 2007-06-22 | 2008-12-24 | 中芯国际集成电路制造(上海)有限公司 | Technique for thinning back side of silicon wafer |
| US20090246955A1 (en) * | 2008-03-26 | 2009-10-01 | Masayuki Kanazawa | Wafer processing method and wafer processing apparatus |
| CN101981664A (en) * | 2008-03-31 | 2011-02-23 | Memc电子材料有限公司 | Methods for etching the edge of a silicon wafer |
| CN102379028A (en) * | 2009-03-31 | 2012-03-14 | 大金工业株式会社 | Etching liquid |
| CN102473636A (en) * | 2009-08-11 | 2012-05-23 | 斯泰拉化工公司 | Microprocessing treatment agent and microprocessing treatment method using same |
| CN102044428A (en) * | 2009-10-13 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | Method for thinning wafer |
| CN102082069A (en) * | 2009-11-27 | 2011-06-01 | 北大方正集团有限公司 | Method for processing back surface of wafer |
| US20140175620A1 (en) * | 2012-12-21 | 2014-06-26 | Lapis Semiconductor Co., Ltd. | Semiconductor device fabrication method and semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112053936A (en) * | 2020-09-22 | 2020-12-08 | 广州粤芯半导体技术有限公司 | Wafer back surface roughening control method and power device manufacturing method |
| CN112053936B (en) * | 2020-09-22 | 2024-06-11 | 粤芯半导体技术股份有限公司 | Wafer back roughening control method and power device manufacturing method |
| CN114016042A (en) * | 2021-11-25 | 2022-02-08 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | Acidic etching solution |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20170303 Address after: 361100 268-269, an industrial park, Tongan Industrial Zone, Fujian, Xiamen Applicant after: Xiamen young Electronic Technology Co., Ltd. Address before: 200233 Shanghai, Xuhui District Rainbow Road No. 56, building 8, room E, Applicant before: SHANGHAI POWER BRIGHT ELECTRONIC TECHNOLOGY LTD. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150325 |