CN116218528A - High-selectivity and low-foam etching solution - Google Patents
High-selectivity and low-foam etching solution Download PDFInfo
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- CN116218528A CN116218528A CN202211573449.8A CN202211573449A CN116218528A CN 116218528 A CN116218528 A CN 116218528A CN 202211573449 A CN202211573449 A CN 202211573449A CN 116218528 A CN116218528 A CN 116218528A
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- 238000005530 etching Methods 0.000 title claims abstract description 90
- 239000006260 foam Substances 0.000 title claims abstract description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 44
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 239000004094 surface-active agent Substances 0.000 claims abstract description 10
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- FWMGRUKXSXEPFQ-UHFFFAOYSA-N 4-ethenylpyridin-1-ium;4-methylbenzenesulfonate Chemical compound C=CC1=CC=[NH+]C=C1.CC1=CC=C(S([O-])(=O)=O)C=C1 FWMGRUKXSXEPFQ-UHFFFAOYSA-N 0.000 claims description 10
- AZHSSKPUVBVXLK-UHFFFAOYSA-N ethane-1,1-diol Chemical compound CC(O)O AZHSSKPUVBVXLK-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- CCEKAJIANROZEO-UHFFFAOYSA-N sulfluramid Chemical compound CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F CCEKAJIANROZEO-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 238000005187 foaming Methods 0.000 claims 3
- MAGFQRLKWCCTQJ-UHFFFAOYSA-M 4-ethenylbenzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-M 0.000 claims 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 45
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 23
- 239000000377 silicon dioxide Substances 0.000 abstract description 21
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 16
- 229920005591 polysilicon Polymers 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 32
- 230000000052 comparative effect Effects 0.000 description 19
- 239000000203 mixture Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- MAGFQRLKWCCTQJ-UHFFFAOYSA-N 4-ethenylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=C(C=C)C=C1 MAGFQRLKWCCTQJ-UHFFFAOYSA-N 0.000 description 7
- 239000000126 substance Substances 0.000 description 4
- UWZNGZYPFNDEKW-UHFFFAOYSA-N ethanol;n-ethyl-1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonamide Chemical compound CCO.CCNS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F UWZNGZYPFNDEKW-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- 240000006927 Foeniculum vulgare Species 0.000 description 1
- 235000004204 Foeniculum vulgare Nutrition 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 fluoride ions Chemical class 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses a buffer oxide etching solution with high selectivity and low foam. The main components of the etching solution are hydrofluoric acid, ammonium fluoride, an additive, a surfactant and ultrapure water. The etching solution is used for etching the silicon dioxide film, and can simultaneously inhibit etching of the polysilicon layer and the silicon nitride layer. The additive can inhibit the etching of the polysilicon layer and the silicon nitride layer simultaneously, has good dispersibility in a solution system, is not easy to foam, and can avoid the uneven etching process. The surfactant is mainly used for reducing the surface tension of the etching solution and improving the wettability of the etching solution. The etching solution has high selectivity to the silicon dioxide layer and the polysilicon layer; meanwhile, the silicon dioxide layer and the silicon nitride layer have high selectivity, and the etching rate selectivity ratio is more than or equal to 12. The etching solution can adjust the content of each component so as to meet the etching selection ratio requirement of the silicon dioxide layer to the polysilicon layer and the silicon nitride layer in different processes.
Description
Technical Field
The invention relates to a buffer oxide etching solution with high selectivity and low foam in the semiconductor manufacturing industry, which can rapidly etch a silicon oxide film and inhibit etching of a polysilicon layer and a silicon nitride layer, and more particularly relates to trench structure etching with high selectivity requirement.
Background
Wet electronic chemicals are key basic chemical materials in integrated circuits, are various liquid chemical materials used in microelectronic and optoelectronic wet process procedures (mainly comprising wet etching, cleaning, developing, stripping and the like), and belong to one of important wafer manufacturing materials. The silicon dioxide layer can be used as a protective layer or a gate oxide layer of the MOS device; the interface characteristic of the polysilicon and the silicon dioxide is excellent, and a specific resistance can be obtained by doping, so that the polysilicon can be used as a gate electrode; the silicon nitride can well inhibit the diffusion of impurities and moisture and can be used as a passivation protection layer. In the etching or cleaning process, the electronic chemicals used ensure that the silicon dioxide etching has no residue, and simultaneously, the polysilicon and the silicon nitride are required to be corroded as much as possible.
The silicon dioxide etching is usually performed by using Buffered Oxide Etchant (BOE) containing HF and NH as main components 4 F and water. The conventional BOE etching solution has a relatively high etching rate on polysilicon and silicon nitride layers, and cannot meet the requirement of high selectivity of advanced processes. The additive introduced for improving the selection ratio can simultaneously inhibit corrosion to the polysilicon and the silicon nitride layers, and has good dispersibility in a system and is not easy to foam. A surfactant is additionally introduced to reduce the surface tension of the etching solution,the wettability of the etching solution is improved. The formula has excellent selectivity and can meet the process requirements of high-end processes.
Disclosure of Invention
The invention provides a high-selectivity and low-foam buffer oxide etching solution and a preparation method thereof, wherein the etching solution can rapidly etch a silicon oxide film, can protect a polysilicon layer and a silicon nitride layer, and meets the etching selection ratio requirements of the silicon dioxide layer to the polysilicon layer and the silicon nitride layer in different processes.
The invention relates to a high-selectivity and low-foam etching solution, which comprises the following components: 1-15% of hydrofluoric acid, 10-25% of ammonium fluoride, 0.01-0.3% of additive, 0.05-0.5% of surfactant and the balance of ultrapure water.
Further, the invention relates to the etching solution, hydrofluoric acid is electronic grade, and the mass concentration is 48-50%.
Further, the invention relates to the etching solution, wherein the ammonium fluoride is in an electronic grade, and the mass concentration is 38-41%.
Further, the present invention relates to the above etching liquid, wherein the resistivity of ultrapure water at 25 ℃ is not lower than 18 megaohms.
Further, the invention relates to the etching solution, and the additive is at least one selected from poly (4-vinylpyridine p-toluenesulfonate), sodium poly (fennel sulfonate), poly (4-styrenesulfonic acid), potassium poly (diethylene sulfonate) and poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonic acid).
Further, the invention relates to the etching solution, and the surfactant is any one selected from alkoxypolyethylene hydroxyl ethanol, N-ethyl perfluorooctyl sulfonamide ethanol and ethoxylation-C12-18-alcohol.
Further, the invention relates to the etching solution, and hydrofluoric acid is used for etching the silicon dioxide film; ammonium bifluoride is used for providing fluoride ions and stabilizing the etching rate of the etching solution; the additive can simultaneously inhibit the etching of the polysilicon layer and the silicon nitride layer, and has good dispersibility in a solution system and is not easy to foam, so that the surface of the wafer is etched smoothly; the surfactant is mainly used for reducing the surface tension of the etching solution, improving the wettability of the etching solution and reducing the surface roughness of the wafer.
Further, the present invention relates to the above etching solution, wherein the surface tension is in the range of 20 to 35mN/m (25 ℃).
Further, the present invention relates to the use of a silica film that is fumed silica; the polysilicon used is doped (D-Poly) and undoped (U-Poly).
Further, the invention relates to the etching solution, the etching solution has high selectivity to the silicon dioxide layer and the D-Poly, and the etching rate selection ratio is more than or equal to 350; the etching solution has high selectivity to the silicon dioxide layer and the U-Poly, and the etching rate selection ratio is more than or equal to 1000; the etching solution has high selectivity to the silicon dioxide layer and the silicon nitride layer, and the etching rate selectivity ratio is more than or equal to 12.
Furthermore, the invention relates to the etching solution, in particular to a trench structure etching with high selectivity requirement, which is also applicable to different processes with high etching selectivity requirement of a silicon dioxide layer on a polysilicon layer and a silicon nitride layer.
Drawings
FIG. 1 is a schematic diagram of trench structure etching with high selectivity requirements.
Detailed Description
The present invention is further illustrated by the following examples, but the present invention is not limited to the examples.
Firstly, preparing etching solution according to the composition of the components, stirring and mixing for 30min, then placing a PFA bottle filled with the etching solution into a low-temperature constant-temperature tank (25 ℃), and respectively placing a silicon dioxide film wafer, a silicon nitride film wafer, a D-Poly wafer and a U-Poly wafer into the etching solution for standing and etching when the temperature of the etching solution is consistent with that of the low-temperature constant-temperature tank. And detecting the thicknesses of the silicon dioxide film wafer, the silicon nitride film wafer, the D-Poly wafer and the U-Poly wafer by using an ellipsometer before and after etching, and respectively calculating corresponding etching rates according to the thickness difference/etching time before and after etching.
And (3) surface tension detection: the surface tension of the etching solution at 25℃was measured.
Defoaming test procedure: a volume of 20mL of the etching solution was charged into a 100mL plastic tube, and the foam height was measured after shaking vertically for 30s and stopping for 5 s.
Example 1
Composition of example 1: 4.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.05wt% poly (4-styrenesulfonic acid), 0.1% N-ethylperfluorooctylsulfonamide ethanol, balance water.
Example 2
Composition of example 2: 6.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.08wt% poly (4-styrenesulfonic acid), 0.1% N-ethyl perfluorooctyl sulfonamide ethanol, and the balance water.
Example 3
Composition of example 3: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.08wt% poly (4-styrenesulfonic acid), 0.1% N-ethylperfluorooctylsulfonamide ethanol, balance water.
Example 4
Composition of example 4: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.15wt% poly (4-vinylpyridine p-toluenesulfonate), 0.2% alkoxypolyethylene hydroxy ethanol, balance water.
Example 5
Composition of example 5: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.2wt% poly (4-styrenesulfonic acid), 0.3% N-ethylperfluorooctylsulfonamide ethanol, balance water.
Example 6
Composition of example 6: 4.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.3wt% poly (4-vinylpyridine p-toluenesulfonate), 0.5wt% alkoxypolyethylene hydroxy ethanol, balance water.
Example 7
Composition of example 7: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.3wt% poly (4-vinylpyridine p-toluenesulfonate), 0.5wt% alkoxypolyethylene hydroxy ethanol, balance water.
Example 8
Composition of example 8: 6wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.01wt% poly (4-vinylpyridine p-toluenesulfonate), 0.05wt% alkoxypolyethylene hydroxy ethanol, balance water.
Example 9
Composition of example 9: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.01wt% poly (4-vinylpyridine p-toluenesulfonate), 0.05wt% alkoxypolyethylene hydroxy ethanol, balance water.
Comparative example 1
Composition of comparative example 1: 4.0wt% hydrofluoric acid, 20wt% ammonium fluoride, and the balance water.
Comparative example 2
Composition of comparative example 2: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.06wt% poly (4-vinylpyridine p-toluenesulfonate), the balance being water.
Comparative example 3
Composition of comparative example 3: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.2wt% alkoxypolyethylene hydroxyl ethanol, and the balance water.
Comparative example 4
Composition of comparative example 4: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.003wt% poly (4-styrenesulfonic acid), 0.25wt% alkoxypolyethylene hydroxy ethanol, and the balance water.
Comparative example 5
Composition of comparative example 5: 8.0wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.1wt% poly (4-styrenesulfonic acid), 0.01wt% ethoxylated-C12-18-alcohols, the balance being water.
Comparative example 6
Composition of comparative example 6: 4wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.5wt% poly (4-vinylpyridine p-toluenesulfonate), 1wt% ethoxylated-C12-18-ol, balance water.
Comparative example 7
Composition of comparative example 7: 6wt% hydrofluoric acid, 20wt% ammonium fluoride, 0.002wt% poly (4-vinylpyridine p-toluenesulfonate), 0.01wt% ethoxylated-C12-18-ol, balance water.
TABLE 1 etching liquid Properties, surface tension, foam height
TABLE 2 etching Rate, etching selectivity
As is clear from Table 1, in examples 1 to 9, the surface tension of the etching solutions was in the range of 20 to 35mN/m, the etching solutions were clear, and the foam heights were 0.2cm or less. Table 2 shows that in examples 1-9, the etching solution has obvious inhibition effect on the D-Poly, U-Poly and silicon nitride layers, and the etching rate selection ratio of the silicon dioxide layer to the D-Poly is more than or equal to 350; the etching rate selection ratio of the silicon dioxide layer to the U-Poly is more than or equal to 1000; the etching rate selection ratio of the silicon dioxide layer and the silicon nitride is more than or equal to 12. In comparative example 1, the surface tension is high, the etching rate to the D-Poly, U-Poly and silicon nitride layers is high, and the etching rate selection ratio is low. In comparative example 2, the surfactant was not contained, the surface tension was large, but the etching of the D-Poly, U-Poly, and silicon nitride layers was inhibited, and the etching rate was high. In comparative example 3, the additive was not contained, but the surface tension was low, but the etching of the D-Poly, U-Poly, and silicon nitride layers was not inhibited. In comparative examples 4 to 7, when the surfactant is too low, the decrease in surface tension is not significant; when the content of the additive is too low, the etching inhibition effect on the D-Poly, U-Poly and silicon nitride layers is weakened, and when the additive is excessive, the solution is in a turbid state, so that the particles of the wafer are polluted.
It is apparent that the above examples and comparative examples are only examples made for clarity of illustration and are not limiting of the embodiments. FIG. 1 is a schematic illustration of etching a trench structure with high selectivity requirements, and the etching solution is also suitable for different processes with high selectivity requirements of silicon dioxide layer to polysilicon layer and silicon nitride layer. Other variations or modifications of the various aspects will be apparent to those of skill in the art upon review of the foregoing description, and it is not necessary nor intended to be exhaustive of all embodiments. And thus obvious variations or modifications to the disclosure are within the scope of the invention.
Claims (6)
1. The etching solution with high selectivity and low foam is characterized in that the etching solution comprises 1-15% of hydrofluoric acid, 10-25% of ammonium fluoride, 0.01-0.3% of additive, 0.05-0.5% of surfactant and the balance of ultrapure water.
2. The etching solution with high selectivity and low foaming as claimed in claim 1, wherein hydrofluoric acid in the etching solution is of an electronic grade and the mass concentration is 48-50%.
3. The etching solution with high selectivity and low foam according to claim 1, wherein the ammonium fluoride in the etching solution component is of an electronic grade and the mass concentration is 38-41%.
4. A highly selective, low foaming etching solution according to claim 1, wherein said ultra pure water has a resistivity of not less than 18 megaohms at 25 ℃.
5. A highly selective and low foaming etching solution according to claim 1, wherein the additive is at least one selected from the group consisting of poly (4-vinylpyridine p-toluenesulfonate), sodium poly (4-styrenesulfonate), potassium poly (ethylenesulfonate), poly (3, 4-ethylenedioxythiophene) -poly (styrenesulfonate).
6. The etching solution of claim 1, wherein the surfactant is any one selected from the group consisting of alkoxypolyethylene hydroxy ethanol, N-ethyl perfluorooctyl sulfonamide ethanol, and ethoxylated-C12-18-alcohols.
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