CN210443532U - Battery silicon wafer cleaning equipment - Google Patents
Battery silicon wafer cleaning equipment Download PDFInfo
- Publication number
- CN210443532U CN210443532U CN201921526565.8U CN201921526565U CN210443532U CN 210443532 U CN210443532 U CN 210443532U CN 201921526565 U CN201921526565 U CN 201921526565U CN 210443532 U CN210443532 U CN 210443532U
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- battery silicon
- tank
- bath
- texturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 99
- 239000010703 silicon Substances 0.000 title claims abstract description 99
- 238000004140 cleaning Methods 0.000 title claims abstract description 63
- 238000006243 chemical reaction Methods 0.000 claims abstract description 58
- 238000005406 washing Methods 0.000 claims abstract description 56
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 239000003513 alkali Substances 0.000 claims abstract description 24
- 238000007747 plating Methods 0.000 claims abstract description 24
- 238000004804 winding Methods 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 75
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 33
- 238000005554 pickling Methods 0.000 claims description 26
- 238000005498 polishing Methods 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 10
- 239000002253 acid Substances 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 235000008216 herbs Nutrition 0.000 abstract description 4
- 210000002268 wool Anatomy 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 description 8
- 238000005530 etching Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 101100493712 Caenorhabditis elegans bath-42 gene Proteins 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052917 strontium silicate Inorganic materials 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The utility model provides a battery silicon wafer cleaning device, which comprises a texturing alkali washing groove for realizing surface texturing of a battery silicon wafer and a first conversion groove which is connected in parallel with the texturing alkali washing groove, wherein the first conversion groove has a texturing state for texturing the surface of the battery silicon wafer and a first winding-plating removal state for removing polycrystalline silicon wound and plated to the front side of the battery silicon wafer when a polycrystalline silicon thin layer is deposited on the back side of the battery silicon wafer; the battery silicon wafer cleaning equipment is also provided with a second conversion groove, and the second conversion groove is provided with an auxiliary de-plating state which is connected in series with the rear side of the first conversion groove and is used for removing the polycrystalline silicon which is plated on the front side of the battery silicon wafer in a winding manner in cooperation with the first conversion groove and a second de-plating state which is used for removing the polycrystalline silicon for the first time when the polycrystalline silicon which is plated on the front side of the battery silicon wafer in the winding manner is not removed by the first conversion groove; the utility model discloses battery silicon chip cleaning equipment can satisfy the making herbs into wool technology of battery silicon chip simultaneously and remove around the plating technology, and traditional equipment has higher integrated level relatively, can reduce equipment cost of manufacture.
Description
Technical Field
The invention relates to the field of solar cell manufacturing, in particular to a cleaning device for a battery silicon wafer.
Background
The crystalline silicon cell is a mainstream product for solar power generation by utilizing clean energy at present, the generated energy of the crystalline silicon cell is directly related to the photoelectric conversion efficiency of the crystalline silicon cell, the reduction of the reflectivity of incident light on the surface of the crystalline silicon cell (namely, the increase of the light trapping property of the crystalline silicon cell) is a crucial step of improving the photoelectric conversion efficiency of the crystalline silicon cell, and the light trapping property of the crystalline silicon cell is increased by treating a cell silicon wafer by adopting an alkali texturing process to obtain a pyramid-shaped texture surface in the industry at present.
For a passivated contact crystalline silicon battery (called a passcon battery for short), a passcon battery with high double-sided rate can be obtained by adopting a double-sided texturing mode. When a passcon battery is manufactured, the manufacturing process of the back side suede is different from the manufacturing process of the front side suede before diffusion, taking an n-type battery silicon wafer as an example, the removal of BSG (barium strontium silicate) and back junction formed during diffusion needs to be considered for manufacturing the back side suede, so that the texturing equipment for manufacturing the front side suede of the battery silicon wafer cannot be directly used for manufacturing the back side suede of the battery silicon wafer. In addition, the key technology of the Passcon cell is that a SiOx/polysilicon thin layer is deposited on the back surface, and the polysilicon thin layer deposited on the back surface is inevitably wound to the front surface in a tubular device, which affects the PN junction, so that the polysilicon wound to the front surface of the cell silicon wafer must be removed (i.e. decoiling), and the removal of the polysilicon on the front surface is realized by adopting special equipment in the industry at present.
In the prior art, devices for three different processes of front texturing, back texturing and winding plating removal of a battery silicon wafer are all independently dispersed devices, so that the purchase cost and the occupied area of the devices cannot be reduced.
In view of the above, there is a need to provide an improved solution to the above problems.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and in order to achieve the aim, the invention provides a battery silicon wafer cleaning device which is specifically designed as follows.
A battery silicon wafer cleaning device comprises a texturing alkali washing groove used for achieving texturing of the surface of a battery silicon wafer and a first conversion groove which is connected with the texturing alkali washing groove in parallel, wherein the first conversion groove is provided with a texturing state and a first winding and plating removing state which can be switched with each other; the battery silicon wafer cleaning equipment is further provided with a second conversion groove, wherein the second conversion groove is provided with an auxiliary winding-plating removing state which is connected in series to the rear side of the first conversion groove and is used for removing the polycrystalline silicon wound and plated on the front side of the battery silicon wafer in a matching manner with the first conversion groove, and a second winding-plating removing state which is used for removing the polycrystalline silicon for the first time when the polycrystalline silicon wound and plated on the front side of the battery silicon wafer is not removed by the first conversion groove.
Further, the cleaning equipment is also provided with a first rinsing bath and a first pickling bath connected to the rear end of the first rinsing bath, and the texturing alkaline washing bath and the first conversion bath are arranged at the front end of the first rinsing bath in parallel; the second conversion tank is connected to the rear end of the first rinsing tank and connected to the front end of the first pickling tank through a second rinsing tank.
Further, the cleaning equipment is also provided with a rough polishing groove for roughly polishing the surface of the battery silicon chip, a pre-cleaning groove connected to the rear end of the rough polishing groove for pre-cleaning the roughly polished battery silicon chip, and a third water washing groove connected to the rear end of the pre-cleaning groove; the texturing alkali washing tank comprises at least one first alkali washing tank used for texturing the front side of the battery silicon wafer, and the first alkali washing tank is connected to the rear end of the third washing tank.
Further, the first conversion tank is connected to the rear end of the third rinsing tank.
Further, the texturing alkali washing tank also comprises at least one second alkali washing tank used for texturing the back surface of the battery silicon wafer.
Furthermore, the cleaning equipment is also provided with a fourth rinsing bath connected to the rear end of the first pickling bath, and a first ozone rinsing bath and a second ozone rinsing bath which are arranged in parallel at the rear end of the fourth rinsing bath.
Further, the cleaning apparatus is also provided with an ozone supply device for supplying ozone to the first ozone rinsing bath and the second ozone rinsing bath.
Further, the cleaning equipment is also provided with a fifth washing tank and a second pickling tank which are sequentially connected with the rear end of the first ozone washing tank, and a sixth washing tank and a third pickling tank which are sequentially connected with the rear end of the second ozone washing tank.
Further, the cleaning equipment is also provided with a seventh rinsing bath connected to the rear ends of the second pickling bath and the third pickling bath.
Further, the cleaning equipment is also provided with a slow pulling groove which is connected to the rear end of the seventh rinsing groove and used for dehydrating the battery silicon chip and a drying groove which is arranged at the rear end of the slow pulling groove and used for drying the battery silicon chip.
The invention has the beneficial effects that: based on the battery silicon wafer cleaning equipment provided by the utility model, one equipment can simultaneously satisfy the texturing process and the winding plating removing process of the battery silicon wafer, and has higher integration level compared with a plurality of traditional dispersed and independently arranged equipments, so that the equipment manufacturing cost and the occupied area can be reduced; and the utility model discloses well setting up of first conversion groove makes cleaning equipment have higher flexibility ratio, adaptation user specific demand that can be better.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic diagram of an implementation structure of the cleaning apparatus according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
With reference to fig. 1, the utility model relates to a battery silicon chip cleaning equipment includes the making herbs into wool alkali washing tank 4 that is used for realizing battery silicon chip surface making herbs into wool and sets up first converting tank 5 with making herbs into wool alkali washing tank 4 is parallelly connected. In the specific implementation process, the texturing alkali washing tank 4 can be a first alkali washing tank 41 for texturing the front surface of the battery silicon wafer, and can also be a second alkali washing tank 42 for texturing the back surface of the battery silicon wafer.
In this embodiment, the cleaning apparatus has three etching alkaline baths 4, which are all arranged in parallel with the first converting bath 5, and the three etching alkaline baths 4 include two first alkaline baths 41 and one second alkaline bath 42, and in a specific application process, one of the two first alkaline baths 41 can be used as a spare bath for the other. It is understood that in other embodiments of the present invention, the number of the first alkaline washing tank 41 and the second alkaline washing tank 42 can be adjusted according to actual requirements, and in some cases, the involved etching alkaline washing tanks 4 can be all the first alkaline washing tank 41 or all the second alkaline washing tank 42. Typically, a KOH solution with a mass fraction ranging from 1% to 5% is provided in the first alkaline washing tank 41, and a KOH solution with a mass fraction ranging from 3% to 10% is provided in the second alkaline washing tank 42.
The utility model discloses in related first conversion groove 5 have the system matte state and first remove around the plating state, first conversion groove 5 can switch between the system matte state and the first removal around the plating state promptly. When the first conversion groove 5 is in a texturing state, texturing can be performed on the surface of the battery silicon wafer; and when the first conversion groove 5 is in the first de-winding state, the first conversion groove can remove the polycrystalline silicon wound to the front side of the cell silicon wafer when the thin polycrystalline silicon layer is deposited on the back side of the cell silicon wafer. In a specific implementation, the first converting tank 5 can be switched to the texturing state in two options, and the first converting tank can be switched to have the same function as the first alkaline washing tank 41 or the second alkaline washing tank 41. In this embodiment, a KOH solution with a mass fraction ranging from 3% to 10% is disposed in the first conversion tank 5, and when the KOH solution is switched to a texturing state, the KOH solution can be used to texture the back surface of the battery silicon wafer.
The utility model provides a battery silicon chip cleaning equipment still has second converting groove 6, and second converting groove 6 has the supplementary state and the second of going to plating around going to plate around the state, and second converting groove 6 can be in the supplementary state and the second of going to plating around going to plate around switching between the state around plating promptly. When the second conversion groove 6 is in the auxiliary winding-plating removal state, the second conversion groove is equivalently connected in series with the rear side of the first conversion groove 5 to be matched with the first conversion groove 5 to remove the polycrystalline silicon wound and plated on the front side of the battery silicon wafer; in the specific application process, the battery silicon wafer firstly passes through the first conversion groove 5 and then passes through the second conversion groove 6 to remove the polycrystalline silicon which is wound and plated to the front side of the battery silicon wafer. When the second conversion groove 6 is in the second spin-coating removing state, namely, when the first conversion groove 5 does not remove the polysilicon spin-coated on the front surface of the battery silicon wafer, the polysilicon removal is realized for the first time; in other words, the first transfer groove 5 in the second spin-off state removes the polysilicon spin-coated on the front surface of the cell silicon wafer without the first transfer groove 5. In this embodiment, KOH and H are provided in the second conversion tank 62O2Solution, wherein the solution KOH, H in the second conversion tank 62O2The mass fraction ranges of the components are respectively 1-10% and 5-12%.
The utility model discloses in, when getting rid of around plating to the positive polycrystalline silicon of battery silicon chip, the mode that first converting groove 5 and 6 cooperations of second converting groove were got rid of relatively single mode that relies on 6 removals of second converting groove is cleaner. In the specific application process, when the related battery silicon wafer adopts single-side deposition to form a polysilicon thin layer on the back side, the polysilicon wound and plated to the back side only exists in the edge area of the front side of the battery silicon wafer, and the winding and plating removal difficulty is higher, so the polysilicon wound and plated to the front side of the battery silicon wafer is removed by usually selecting a mode of matching the first conversion groove 5 and the second conversion groove 6; when the battery silicon wafer adopts double-sided deposition to form a polysilicon thin layer on the back surface, the polysilicon wound and plated to the back surface uniformly covers the front surface area of the battery silicon wafer, and at the moment, the winding and plating are easier to remove, so the polysilicon wound and plated to the front surface of the battery silicon wafer is usually removed by only depending on the second conversion groove 6.
Based on the battery silicon wafer cleaning equipment provided by the utility model, one equipment can simultaneously satisfy the texturing process and the winding plating removing process of the battery silicon wafer, and has higher integration level compared with a plurality of traditional dispersed and independently arranged equipments, so that the equipment manufacturing cost and the occupied area can be reduced; and the utility model discloses well first conversion tank 5's setting makes cleaning equipment have higher flexibility ratio, adaptation user specific demand that can be better.
The utility model provides a cleaning equipment still has first wash bowl 7 and connects in first wash bowl 7 rear end and be equipped with HF, the first descaling bath 8 of HCl solution in, in this embodiment, HF, the HCl mass fraction scope of solution is 3% -15%, 2% -8% respectively in the first descaling bath 8. Referring to fig. 1, the texturing alkali bath 4 and the first conversion bath 5 in this embodiment are arranged in parallel at the front end of the first rinsing bath 7, that is, the battery silicon wafers treated by the texturing alkali bath 4 and the first conversion bath 5 need to enter the first rinsing bath 7 for rinsing.
Further, as shown in the drawing, the second switch tank 6 is connected to the rear end of the first washing tank 7 and to the front end of the first pickling tank 8 through a second washing tank 9. Based on this, when the first conversion tank 5 and the second conversion tank 6 are matched to remove the polysilicon wound and plated on the front surface of the cell silicon wafer, the cell silicon wafer processed by the first conversion tank 5 needs to flow into the second conversion tank 6 after flowing into the first rinsing tank 7, and then enters the first pickling tank 8 through the second rinsing tank for pickling; when the surface texturing of the battery silicon wafer is carried out by adopting the texturing alkali tank 4 or the first conversion tank 5, the battery silicon wafer treated by the texturing alkali tank 4 or the first conversion tank 5 firstly flows into the first washing tank 7, and then directly enters the first pickling tank 8 from the first washing tank 7 for pickling.
Referring to fig. 1, the cleaning apparatus of the present invention further comprises a rough polishing device for rough polishing the surface of the battery silicon waferA rough polishing tank 1, a pre-cleaning tank 2 connected with the rear end of the rough polishing tank 1 and used for pre-cleaning the roughly polished battery silicon wafer, and a third washing tank 3 connected with the rear end of the pre-cleaning tank 2, wherein a KOH solution is arranged in the rough polishing tank 1, and KOH and H are arranged in the pre-cleaning tank 22O2And (3) solution. The first alkaline washing tanks 41 in the present embodiment are connected to the rear end of the third rinsing tank 3. When the front surface of the battery silicon wafer is subjected to texturing, the battery silicon wafer is firstly subjected to rough polishing through the rough polishing groove 1, then is subjected to cleaning treatment through the pre-cleaning groove 2 and the third water washing groove 3, and then enters the first alkaline washing groove 41 for front surface texturing, so that the texturing effect of the front surface of the battery silicon wafer is better.
In the embodiment, the mass fraction of the KOH solution in the rough polishing tank 1 is 1% -5%, and the KOH and H in the pre-cleaning tank 2 are2O2The mass fraction ranges of the components are respectively 0.5-3% and 5-12%.
The utility model discloses in, first switching trough 5 is connected in 3 rear ends of third wash bowl, so, when first switching trough 5 was used for the positive system fine hair of battery silicon chip, related battery silicon chip also can carry out positive system fine hair again through rough polishing earlier.
Referring to fig. 1, the cleaning apparatus of the present invention further includes a fourth rinsing bath 10 connected to the rear end of the first pickling bath 8, and a first ozone rinsing bath 11 and a second ozone rinsing bath 12 connected in parallel to the rear end of the fourth rinsing bath 10. In the specific implementation process, the concentration ranges of ozone in the first ozone water washing tank 11 and the second ozone water washing tank 12 are both 0-50 ppm, and the pH value of the solution is less than 6.
In a specific application process, the battery silicon wafer subjected to the texturing treatment and the battery silicon wafer subjected to the winding and plating removal treatment respectively flow through different ozone water washing tanks for cleaning, for example, the battery silicon wafer subjected to the texturing treatment flows through the first ozone water washing tank 11 for cleaning, and the battery silicon wafer subjected to the winding and plating removal treatment flows through the second ozone water washing tank 12 for cleaning. Thus, cross contamination caused by different processes can be avoided
In a preferred embodiment of the present invention, the cleaning apparatus of the present invention further includes an ozone supply device for supplying ozone to the first ozone water wash tank 11 and the second ozone water wash tank 12. The ozone supply device is adopted to realize the supply of the ozone of the two ozone rinsing tanks, so that the manufacturing cost of the cleaning equipment can be effectively reduced.
Further, the cleaning equipment in this embodiment further includes a fifth washing tank 13 and a second pickling tank 14 sequentially connected to the rear end of the first ozone washing tank 11, and a sixth washing tank 15 and a third pickling tank 16 sequentially connected to the rear end of the second ozone washing tank 12, wherein HF and HCl solutions are both provided in the second washing tank 14 and the third pickling tank 16, and the mass fraction ranges of HF and HCl in the solutions of the second washing tank 14 and the third pickling tank 16 are respectively 3% -15% and 1% -5%.
The rear ends of the second pickling tank 14 and the third pickling tank 16 in the utility model are provided with rinsing tanks, and preferably, the rear ends of the second pickling tank 14 and the third pickling tank 16 are connected to the same rinsing tank, namely, a seventh rinsing tank 17.
The utility model relates to a cleaning equipment still has and connects and to be used for carrying out the drawing groove 18 slowly of battery silicon chip dehydration in seventh wash bowl 17 rear end and set up in carrying the drying bath 19 that the groove 18 rear end is used for battery silicon chip to dry slowly. Specifically, the battery silicon wafer has deionized water in the slow pulling groove 18, and the battery silicon wafer leaves the slow pulling groove 18 in a slow pulling mode, so that the surface of the battery silicon wafer has less water stain residues, and the battery silicon wafer can be dried quickly in the drying groove. In the specific implementation process, the number of the drying grooves 19 in the present invention can be more than one, and two drying grooves 19 are connected in parallel at the rear end of the slow lifting groove 18 in the present embodiment; in other embodiments, two drying slots 19 may also be arranged in series (not shown in the figure), so as to ensure better drying effect of the battery silicon wafer.
It is understood that, in this embodiment, necessary additives may be further added to each tank, and the components and the addition amount of the specific additives may refer to the implementation manners of each specific process (including front-side texturing, back-side texturing, and decoating) in the prior art, and are not further developed herein; additionally, the utility model discloses in the convenient understanding of the aim at of each solution mass fraction parameter setting the utility model discloses, at the concrete implementation in-process, technical personnel in the field can carry out reasonable regulation to relevant parameter.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. The cleaning equipment for the battery silicon wafer is characterized by comprising a texturing alkali groove for achieving texturing on the surface of the battery silicon wafer and a first conversion groove which is connected in parallel with the texturing alkali groove, wherein the first conversion groove has a texturing state and a first winding and plating removing state which can be mutually switched; the battery silicon wafer cleaning equipment is further provided with a second conversion groove, wherein the second conversion groove is provided with an auxiliary winding-plating removing state which is connected in series to the rear side of the first conversion groove and is used for removing the polycrystalline silicon wound and plated on the front side of the battery silicon wafer in a matching manner with the first conversion groove, and a second winding-plating removing state which is used for removing the polycrystalline silicon for the first time when the polycrystalline silicon wound and plated on the front side of the battery silicon wafer is not removed by the first conversion groove.
2. The battery silicon wafer cleaning equipment as claimed in claim 1, wherein the cleaning equipment is further provided with a first rinsing bath and a first pickling bath connected to the rear end of the first rinsing bath, and the texturing alkaline bath and the first conversion bath are arranged at the front end of the first rinsing bath in parallel; the second conversion tank is connected to the rear end of the first rinsing tank and connected to the front end of the first pickling tank through a second rinsing tank.
3. The battery silicon wafer cleaning equipment as claimed in claim 1, wherein the cleaning equipment further comprises a rough polishing tank for roughly polishing the surface of the battery silicon wafer, a pre-cleaning tank connected to the rear end of the rough polishing tank for pre-cleaning the roughly polished battery silicon wafer, and a third water washing tank connected to the rear end of the pre-cleaning tank; the texturing alkali washing tank comprises at least one first alkali washing tank used for texturing the front side of the battery silicon wafer, and the first alkali washing tank is connected to the rear end of the third washing tank.
4. The battery silicon wafer cleaning equipment as claimed in claim 3, wherein the first conversion tank is connected to the rear end of the third rinsing tank.
5. The battery silicon wafer cleaning apparatus according to any one of claims 1 to 4, wherein the texturing alkaline bath further comprises at least one second alkaline bath for texturing the back surface of the battery silicon wafer.
6. The battery silicon wafer cleaning equipment as claimed in claim 2, wherein the cleaning equipment further comprises a fourth rinsing bath connected to the rear end of the first pickling bath, and a first ozone rinsing bath and a second ozone rinsing bath which are arranged in parallel at the rear end of the fourth rinsing bath.
7. The battery silicon wafer cleaning equipment according to claim 6, further comprising an ozone supply device for supplying ozone to the first ozone rinsing bath and the second ozone rinsing bath.
8. The battery silicon wafer cleaning equipment as claimed in claim 6 or 7, wherein the cleaning equipment is further provided with a fifth rinsing bath and a second acid washing bath which are sequentially connected to the rear end of the first ozone rinsing bath, and a sixth rinsing bath and a third acid washing bath which are sequentially connected to the rear end of the second ozone rinsing bath.
9. The battery silicon wafer cleaning apparatus according to claim 8, wherein the cleaning apparatus further comprises a seventh rinsing bath connected to the rear ends of the second pickling bath and the third pickling bath.
10. The battery silicon wafer cleaning device according to claim 9, further comprising a slow pulling tank connected to the rear end of the seventh rinsing tank for dehydrating the battery silicon wafers and a drying tank arranged at the rear end of the slow pulling tank for drying the battery silicon wafers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921526565.8U CN210443532U (en) | 2019-09-12 | 2019-09-12 | Battery silicon wafer cleaning equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921526565.8U CN210443532U (en) | 2019-09-12 | 2019-09-12 | Battery silicon wafer cleaning equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210443532U true CN210443532U (en) | 2020-05-01 |
Family
ID=70410618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921526565.8U Active CN210443532U (en) | 2019-09-12 | 2019-09-12 | Battery silicon wafer cleaning equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210443532U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113675301A (en) * | 2021-09-13 | 2021-11-19 | 通威太阳能(眉山)有限公司 | Cleaning method and cleaning machine for reworked sheets |
-
2019
- 2019-09-12 CN CN201921526565.8U patent/CN210443532U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113675301A (en) * | 2021-09-13 | 2021-11-19 | 通威太阳能(眉山)有限公司 | Cleaning method and cleaning machine for reworked sheets |
| CN113675301B (en) * | 2021-09-13 | 2023-07-25 | 通威太阳能(眉山)有限公司 | Reworked sheet cleaning method and cleaning machine |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109004062B (en) | Method and equipment for etching and polishing silicon wafer by using ozone in alkaline system | |
| WO2021213168A1 (en) | Monocrystalline silicon wafer having rounded pyramid structure and preparation method | |
| CN104037257B (en) | Solaode and manufacture method, single-side polishing apparatus | |
| WO2021136196A1 (en) | Monocrystalline silicon wafer with pyramid superposed structure | |
| JP6815532B2 (en) | PERC solar cell capable of improving photoelectric conversion efficiency and its manufacturing method | |
| CN102299207B (en) | Method for manufacturing porous pyramid-type silicon surface light trapping structure for solar cell | |
| CN102185011A (en) | Texturing method for solar cell | |
| CN107658367A (en) | A kind of Wet chemical processing method of hetero-junction solar cell | |
| CN111933752A (en) | Solar cell and preparation method thereof | |
| CN103178159A (en) | Crystalline silicon solar cell etching method | |
| CN212725345U (en) | Cleaning device for TOPCon battery | |
| CN103441182A (en) | Method for processing fabric surface of solar cell and solar cell | |
| CN106409977B (en) | A kind of cleaning method of silicon chip of solar cell, the preparation method of solar cell | |
| CN110165015A (en) | A kind of solar energy single crystal battery slice etching technique | |
| CN111403561A (en) | Silicon wafer texturing method | |
| CN117153953B (en) | Preparation method of split-film type double-sided TOPCON battery | |
| CN210443532U (en) | Battery silicon wafer cleaning equipment | |
| CN106299023B (en) | A kind of anti-PID solar cells are done over again the processing method of piece | |
| KR101212896B1 (en) | Texturing of multicrystalline silicon for solar cell using an acidic solution | |
| CN110137302A (en) | The cleaning of silicon heterojunction solar battery crystalline silicon substrate and etching method and silicon heterojunction solar battery | |
| WO2022142943A1 (en) | Texturing method and equipment, monocrystalline silicon wafer and monocrystalline silicon solar cell | |
| CN108649098A (en) | A kind of method of silicon chip single side etching polishing | |
| CN104393094B (en) | N-type silicon chip cleaning texturing method for HIT battery | |
| CN104505438A (en) | Solar battery cell preparation system | |
| CN101447530B (en) | Process for cleaning sizing agent used for etching silicon dioxide mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Atlas sunshine Power Group Co.,Ltd. Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. |