CN112133764B - PERC battery prepared by magnetron sputtering method and preparation process thereof - Google Patents
PERC battery prepared by magnetron sputtering method and preparation process thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 17
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 21
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 239000007888 film coating Substances 0.000 claims abstract description 20
- 238000009501 film coating Methods 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 120
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 73
- 229910052757 nitrogen Inorganic materials 0.000 claims description 60
- 238000000576 coating method Methods 0.000 claims description 57
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 54
- 239000011248 coating agent Substances 0.000 claims description 53
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 42
- 239000007864 aqueous solution Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 41
- 238000005406 washing Methods 0.000 claims description 40
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 39
- 229910052786 argon Inorganic materials 0.000 claims description 38
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 32
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 28
- 239000011261 inert gas Substances 0.000 claims description 28
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 claims description 21
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 20
- 239000000243 solution Substances 0.000 claims description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims description 13
- 238000000861 blow drying Methods 0.000 claims description 12
- 238000007650 screen-printing Methods 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 11
- 230000001590 oxidative effect Effects 0.000 claims description 11
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 10
- 239000011259 mixed solution Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 8
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- GVGUFUZHNYFZLC-UHFFFAOYSA-N dodecyl benzenesulfonate;sodium Chemical compound [Na].CCCCCCCCCCCCOS(=O)(=O)C1=CC=CC=C1 GVGUFUZHNYFZLC-UHFFFAOYSA-N 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- 229940080264 sodium dodecylbenzenesulfonate Drugs 0.000 claims description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 6
- 238000009210 therapy by ultrasound Methods 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 5
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 235000021314 Palmitic acid Nutrition 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 claims description 4
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 229940071182 stannate Drugs 0.000 claims description 4
- 125000005402 stannate group Chemical group 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 claims 26
- 210000005056 cell body Anatomy 0.000 claims 3
- 230000006872 improvement Effects 0.000 abstract description 6
- 238000005215 recombination Methods 0.000 abstract description 3
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- 230000007246 mechanism Effects 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 230000007847 structural defect Effects 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
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- 230000031700 light absorption Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
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- 238000000608 laser ablation Methods 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The invention discloses a PERC battery prepared by a magnetron sputtering method and a preparation process thereof, and the PERC battery comprises a first antireflection layer, a battery piece and a second antireflection layer, wherein the top of the battery piece is provided with the first antireflection layer, the top of the first antireflection layer is provided with a front electrode, the bottom of the battery piece is provided with a passivation layer, the bottom of the passivation layer is provided with the second antireflection layer, and the bottom of the second antireflection layer is provided with a back electrode. The silicon nitride film prepared by the magnetron sputtering method has the advantages of high purity, good compactness, high uniformity, good adhesive force, higher deposition rate, low temperature required by a battery piece, capability of realizing large-area film coating, reduction of back surface electrical recombination rate, good internal optical back reflection mechanism, reduction of structural defects, improvement of open-circuit voltage and short-circuit current, improvement of photoelectric conversion efficiency and suitability for wide popularization and use.
Description
Technical Field
The invention relates to the field of batteries, in particular to a PERC battery prepared by a magnetron sputtering method and a preparation process thereof.
Background
Solar energy is a renewable energy source, and solar cells can be used for directly converting light energy into electric energy through a photoelectric effect or a photochemical effect, at present, more than 80% of the solar cells are prepared from crystalline silicon materials, and the preparation of the crystalline silicon solar cells with high efficiency and low cost has very important significance for large-scale solar power generation. The antireflection film is formed by a solar cell structure, has very important application to solar energy preparation, can reduce the reflectivity of sunlight on the surface of a cell, improves the number of photons incident into the cell, increases the number of photon-generated carriers, improves short-circuit current and improves the photoelectric conversion efficiency of the cell. The antireflection film is a silicon nitride film prepared by adopting a chemical vapor deposition technology, the deposition rate is not high, a reaction source and residual gas after reaction are flammable, explosive or toxic, equipment is easy to corrode, great potential safety hazards exist in industrial production, and the temperature of a workpiece is high during preparation, so that the application is limited. Therefore, we propose a PERC cell prepared by magnetron sputtering and a preparation process thereof.
Disclosure of Invention
The invention aims to provide a PERC battery prepared by a magnetron sputtering method and a preparation process thereof, and aims to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme: the PERC battery comprises a first antireflection layer, a battery piece and a second antireflection layer, wherein the first antireflection layer is arranged on the top of the battery piece, a front electrode is arranged on the top of the first antireflection layer, a passivation layer is arranged at the bottom of the battery piece, the second antireflection layer is arranged at the bottom of the passivation layer, and a back electrode is arranged at the bottom of the second antireflection layer.
Further, the passivation layer is aluminum oxide, and the first antireflection layer and the second antireflection layer are both silicon nitride.
Further, the thickness of the passivation layer is 1-5 nm, the thickness of the first antireflection layer is 60-90 nm, and the thickness of the second antireflection layer is 75-105 nm.
A preparation process of a PERC battery prepared by adopting a magnetron sputtering method comprises the following steps:
1) texturing: cleaning the battery piece, and texturing to obtain a battery piece A;
2) diffusion: taking the cell A for low-pressure diffusion to prepare a cell B;
3) laser scanning: taking the cell B for re-diffusion to obtain a cell C;
4) etching: etching the cell C to obtain a cell D;
5) back deposition: taking the cell D, and depositing aluminum oxide at the bottom of the cell D to form a passivation layer to obtain a cell E;
6) back coating: taking a battery piece E, and coating a film on the bottom of the battery piece E by adopting a magnetron sputtering method to form a second anti-reflection layer to prepare a battery piece F;
7) coating a film on the front side: taking a battery piece F, and coating a film on the top of the battery piece F to form a first anti-reflection layer to obtain a battery piece G;
8) screen printing: taking a cell G, and respectively carrying out screen printing on the top and the bottom of the cell G to form a front electrode and a back electrode to prepare a cell H;
9) and (3) testing: and testing the battery piece H, and taking a qualified product as a finished battery.
Further, the method comprises the following steps:
1) texturing: cleaning the battery piece, and texturing to obtain a battery piece A;
2) low-pressure diffusion: taking the cell A for low-pressure diffusion to prepare a cell B;
3) laser scanning: performing secondary diffusion on the cell B by using a laser to form local doping, and preparing a cell C;
4) etching: etching the cell C to obtain a cell D;
5) back deposition:
placing the cell D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 325-375 ℃ for 1-5 min, heating to 375-400 ℃ for 5-10 min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 550-650 sccm, and the microwave power is 342-521W, so as to prepare a cell E;
6) back coating:
placing a cell E in a vacuum chamber, taking the cell as an anode, taking silicon nitride as a cathode target, placing a strong magnet at the back of the cathode target, introducing 0.1-10 Pa inert gas into the vacuum chamber, and applying 1-3 KV direct current negative high voltage or 13.56MHz radio frequency voltage to the cathode target for film coating, wherein the temperature of the cell E is 80-450 ℃, the distance between the cell E and a film coating material is 20-60 cm, the film coating time is 40-120 min, the magnetic force of the strong magnet is 100-1000 Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 0.97-1.12, so as to prepare a cell F;
7) coating the film on the front surface;
placing a battery piece F in a vacuum chamber, taking the battery piece F as an anode, taking silicon nitride as a cathode target material, placing a strong magnet behind the cathode target material, introducing 0.1-10 Pa inert gas into the vacuum chamber, applying 1-3 KV direct current negative high voltage or 13.56MHz radio frequency voltage to the cathode target for film coating, wherein the temperature of the battery piece E is 80-450 ℃, the distance between the battery piece E and a film coating material is 20-60 cm, the film coating time is 40-120 min, the magnetic force of the strong magnet is 100-1000 Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 0.97-1.12, then placing the battery piece F in a high-temperature furnace at 900-1100 ℃, heating for 20-30 min in a high-purity nitrogen atmosphere, and taking out the furnace when the furnace is cooled to 90-110 ℃ to obtain a battery piece G;
8) screen printing:
taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing:
and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
Further, the method comprises the following steps:
1) texturing:
immersing the cell in a mixed aqueous solution of sulfuric acid, hydrofluoric acid and acetic acid at 45-75 ℃, carrying out ultrasonic treatment, cleaning for 0.5-2 min, then carrying out blow-drying by using an air knife, placing the cell in a mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, cleaning for 0.5-2 min, washing with water, then placing the cell in a mixed aqueous solution of potassium hydroxide and isopropanol, carrying out treatment for 0.5-2 min, washing with water, and carrying out blow-drying by using a nitrogen gun to obtain a cell A;
in the technical scheme, the surface of the battery piece is corroded by sulfuric acid, hydrofluoric acid and acetic acid, and surface stains are removed; the material is placed in a mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, so that the surface corrosion structure can be formed by utilizing the anisotropy of various acids while the cleanness of the surface of the cell piece is kept; and then, texturing is carried out on the surface of the cell by using sodium hydroxide to form a textured structure, so that the light reflectivity of the cell is reduced.
2) Low-pressure diffusion:
preheating a reaction kettle, introducing nitrogen, placing the cell A in the reaction kettle, raising the temperature and the pressure, introducing nitrogen and mixed gas, oxidizing, keeping the introduction of the gas, lowering the temperature and the pressure, performing low-temperature deposition, then raising the temperature, performing low-pressure diffusion, and recovering normal pressure to perform oxidation, wherein the mixed gas is nitrogen and oxygen carrying sources to prepare a cell B;
3) laser scanning:
performing secondary diffusion on the cell B by using a laser to form local doping, and preparing a cell C, wherein the wavelength of nanosecond pulse laser is 532nm, and the pulse energy is 80-300 uJ;
4) etching:
placing the battery C in hydrofluoric acid to remove surface glass, washing with water, placing the battery C above a corrosive solution, corroding with the surface tension of the corrosive solution, washing with water again, placing the battery C in a 15-20 ℃ potassium hydroxide aqueous solution for alkali washing, then washing with water, placing the battery C in a 70-90 ℃ nitric acid and hydrochloric acid mixed aqueous solution for treating for 15-25 min, taking out the water, and drying by blowing, wherein the corrosive solution is an 0-10 ℃ nitric acid and hydrofluoric acid aqueous solution, so as to obtain a battery piece D;
in the technical scheme, the nanosecond pulses are used for carrying out local doping on the cell to form the selective emitter region, high-concentration doping can be formed in the region corresponding to the electrode, the junction depth of the formed PN junction is large, high short-circuit current can be formed conveniently, light absorption is facilitated, and the efficiency of the cell is improved; removing borosilicate glass or phosphorosilicate glass on the surface of the cell by using hydrofluoric acid, and etching and removing the edge of the cell by using corrosive liquid; and oxidizing the battery piece by using a mixed aqueous solution of hot nitric acid and hydrochloric acid to obtain a silicon dioxide film, so that the antireflection capability of the battery is improved.
5) Back deposition:
placing the cell D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 325-375 ℃ for 1-5 min, heating to 375-400 ℃ for 5-10 min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 550-650 sccm, and the microwave power is 342-521W, so as to prepare a cell E;
6) back coating:
placing a cell E in a vacuum chamber, taking the cell as an anode, taking silicon nitride as a cathode target, placing a strong magnet at the back of the cathode target, introducing 0.1-10 Pa inert gas into the vacuum chamber, and applying 1-3 KV direct current negative high voltage or 13.56MHz radio frequency voltage to the cathode target for film coating, wherein the temperature of the cell E is 80-450 ℃, the distance between the cell E and a film coating material is 20-60 cm, the film coating time is 40-120 min, the magnetic force of the strong magnet is 100-1000 Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 0.97-1.12, so as to prepare a cell F;
7) coating the film on the front surface;
placing a battery piece F in a vacuum chamber, taking the battery piece F as an anode, taking silicon nitride as a cathode target material, placing a strong magnet behind the cathode target material, introducing 0.1-10 Pa inert gas into the vacuum chamber, applying 1-3 KV direct current negative high voltage or 13.56MHz radio frequency voltage to the cathode target for film coating, wherein the temperature of the battery piece E is 80-450 ℃, the distance between the battery piece E and a film coating material is 20-60 cm, the film coating time is 40-120 min, the magnetic force of the strong magnet is 100-1000 Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 0.97-1.12, then placing the battery piece F in a high-temperature furnace at 900-1100 ℃, heating for 20-30 min in a high-purity nitrogen atmosphere, and taking out the furnace when the furnace is cooled to 90-110 ℃ to obtain a battery piece G;
in the technical scheme, the chemical vapor deposition is carried out on the bottom of the battery piece to obtain the aluminum oxide film, so that the battery piece has the effects of insulation, heat insulation and high temperature resistance, and meanwhile, the field passivation capability is good, so that the battery piece has higher short-circuit current; in the coating process, argon ions are generated by argon atom collision, the argon ions are accelerated under the action of an electric field to bombard silicon nitride to generate sputtering, a silicon nitride film is formed by deposition at an anode, an antireflection structure is obtained, minority carriers are prevented from reaching an interface, extremely low surface recombination is formed, the open-circuit voltage and the short-circuit current are improved, the photoelectric conversion efficiency is improved, the deposition rate of the silicon nitride is high, the film has good compactness and uniformity, the coating process is carried out at a low temperature and in a vacuum system, various components are favorably and strictly controlled, the damage to the film is small, impurity pollution is prevented, the temperature of a battery piece E is favorable for improving the size and the order degree of silicon nitride grains, the smoothness and the compactness of the silicon nitride layer are promoted, the uniform property of the silicon nitride film is realized, and the transmittance of an antireflection layer is ensured.
8) Screen printing:
taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing:
and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
In the technical scheme, whether the defects of color difference, sheet layer falling, scratch crack and the like, electrode pattern printing offset, slurry leakage, distortion and the like exist in the appearance of the cell is detected, the open-circuit voltage, the short-circuit current and the photoelectric conversion efficiency of the cell are tested, and products with similar performance in qualified products are divided into a group, so that the solar cell is conveniently utilized subsequently.
Further, the low-pressure diffusion in the step 2) comprises two times of low-pressure diffusion, boron is diffused at the top of the cell piece, and the mixed gas is nitrogen and oxygen carrying boron tribromide; phosphorus is diffused at the bottom of the cell piece, and the mixed gas is nitrogen and oxygen with phosphorus oxychloride.
Further, the step 8) of before screen printing, further comprises a laser ablation process: and (3) inclining the battery piece by 20-70 degrees, placing the battery piece in the mixed solution, standing for 30-60 min, then floating the battery piece out to be flush with the water surface of the mixed solution, and performing oblique angle scanning of 20-70 degrees by using an electron beam, wherein the mixed solution is a mixed aqueous solution of tetrabutyl titanate, tetrabutyl stannate, palmitic acid, 3-aminopropyltriethoxysilane, isopropanol, hydrochloric acid and acetylacetone.
In the technical scheme, tetrabutyl titanate and tetrabutyl stannate are hydrolyzed to form titanium dioxide and tin dioxide, the titanium dioxide and the tin dioxide are deposited on the surface of the cell, the palmitic acid and 3-aminopropyltriethoxysilane are used for guiding the titanium dioxide and tin dioxide deposition structures, the cell is obliquely arranged, the titanium dioxide and the tin dioxide on the surface of the cell form an oblique columnar structure due to the inclination of an electron beam, the reflection of sunlight on the surface of the cell is reduced, the light absorption is improved, and the improvement of the efficiency of the solar cell is promoted.
Compared with the prior art, the invention has the following beneficial effects:
according to the PERC battery prepared by the magnetron sputtering method and the preparation process thereof, the silicon nitride film is prepared by the magnetron sputtering method to form the antireflection layer, the film has high purity, good compactness, good film forming uniformity and good adhesive force, the silicon nitride films in different stress states can meet different requirements, the deposition rate is high, the temperature required by the battery piece is relatively low, large-area film coating can be realized, the back surface electrical recombination rate is greatly reduced, a good internal optical back reflection mechanism is formed, the structural defects of the film are reduced, the open-circuit voltage and the short-circuit current are improved, the photoelectric conversion efficiency is improved, and energy conservation and consumption reduction are realized.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
1) Texturing: immersing the cell slice in a mixed aqueous solution of sulfuric acid, hydrofluoric acid and acetic acid at 45 ℃, carrying out ultrasonic treatment simultaneously, cleaning for 0.5min, then carrying out blow-drying by using an air knife, placing the cell slice in the mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, cleaning for 0.5min, washing with water, then placing the cell slice in a mixed aqueous solution of potassium hydroxide and isopropanol, carrying out treatment for 0.5min, washing with water, and carrying out blow-drying by using a nitrogen gun to obtain a cell slice A;
2) low-pressure diffusion: preheating a reaction kettle, introducing nitrogen, placing the cell piece A in the reaction kettle, raising the temperature and the pressure, introducing nitrogen and mixed gas, oxidizing, keeping the gas introduced, lowering the temperature and the pressure, performing low-temperature deposition, then raising the temperature, performing low-pressure diffusion, recovering normal pressure, and oxidizing, wherein the mixed gas is nitrogen and oxygen carrying boron tribromide, so as to prepare a cell piece B;
3) laser scanning: performing secondary diffusion on the cell B by using a laser to form local doping to prepare a cell C, wherein the wavelength of nanosecond pulse laser is 532nm, and the pulse energy is 80 uJ;
4) etching: placing the battery C in hydrofluoric acid to remove surface glass, washing with water, placing above a corrosive solution, corroding by using the surface tension of the corrosive solution, washing with water again, placing in a 15 ℃ potassium hydroxide aqueous solution for alkali washing, then washing with water, placing in a 70 ℃ nitric acid and hydrochloric acid mixed aqueous solution for treating for 15min, taking out water, washing, and drying by blowing, wherein the corrosive solution is an aqueous solution of nitric acid and hydrofluoric acid at 0 ℃ to obtain a battery piece D;
5) back deposition: placing the cell D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 325 ℃ for 1min, heating to 375 ℃ for 5min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 550sccm, and the microwave power is 342W to obtain a cell E;
6) back coating: placing a cell E in a vacuum chamber, taking the cell as an anode, taking silicon nitride as a cathode target, placing a strong magnet behind the cathode target, introducing 0.1Pa inert gas into the vacuum chamber, and applying 1KV direct current negative high pressure to the cathode target for coating, wherein the temperature of the cell E is 80 ℃, the distance between the cell E and a coating material is 20cm, the coating time is 40min, the magnetic force of the strong magnet is 100Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 0.97, so as to prepare a cell F;
7) coating the film on the front surface; placing a cell piece F in a vacuum chamber, taking the cell piece F as an anode, taking silicon nitride as a cathode target material, placing a strong magnet behind the cathode target material, introducing 0.1Pa inert gas into the vacuum chamber, applying 1KV direct current negative high pressure to the cathode target material for coating, wherein the temperature of the cell piece E is 80 ℃, the distance between the cell piece E and a coating material is 20cm, the coating time is 400min, the magnetic force of the strong magnet is 100Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 0.97, then placing the cell piece F in a high-temperature furnace at 900 ℃, heating the cell piece E for 20min in a high-purity nitrogen atmosphere, cooling the furnace to 90 ℃, and taking out to obtain a cell piece G;
8) screen printing: taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing: and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
Example 2
1) Texturing: immersing the cell slice in a mixed aqueous solution of sulfuric acid, hydrofluoric acid and acetic acid at 60 ℃, carrying out ultrasonic treatment simultaneously, cleaning for 1.2min, then carrying out blow-drying by using an air knife, placing the cell slice in a mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, cleaning for 1.2min, washing with water, then placing the cell slice in a mixed aqueous solution of potassium hydroxide and isopropanol, carrying out treatment for 1.2min, washing with water, and carrying out blow-drying by using a nitrogen gun to obtain a cell slice A;
2) low-pressure diffusion: preheating a reaction kettle, introducing nitrogen, placing the cell piece A in the reaction kettle, raising the temperature and the pressure, introducing nitrogen and mixed gas, oxidizing, keeping the gas introduced, lowering the temperature and the pressure, performing low-temperature deposition, then raising the temperature, performing low-pressure diffusion, recovering normal pressure, and oxidizing, wherein the mixed gas is nitrogen and oxygen carrying boron tribromide, so as to prepare a cell piece B;
3) laser scanning: performing secondary diffusion on the cell B by using a laser to form local doping to prepare a cell C, wherein the wavelength of nanosecond pulse laser is 532nm, and the pulse energy is 190 uJ;
4) etching: placing the battery C in hydrofluoric acid to remove surface glass, washing with water, placing above a corrosive solution, corroding by using the surface tension of the corrosive solution, washing with water again, placing in a potassium hydroxide aqueous solution at 18 ℃ for alkali washing, then washing with water, placing in a mixed aqueous solution of nitric acid and hydrochloric acid at 80 ℃ for treating for 20min, taking out, washing with water, and drying by blowing, wherein the corrosive solution is an aqueous solution of nitric acid and hydrofluoric acid at 5 ℃ to obtain a battery piece D;
5) back deposition: placing the cell D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 350 ℃ for 3min, heating to 387 ℃ for 7min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 600sccm, and the microwave power is 431W to obtain a cell E;
6) back coating: placing a cell E in a vacuum chamber, taking the cell as an anode, taking silicon nitride as a cathode target, placing a strong magnet behind the cathode target, introducing 5Pa inert gas into the vacuum chamber, and applying 2KV direct current negative high voltage to the cathode target for coating, wherein the temperature of the cell E is 265 ℃, the distance between the cell E and a coating material is 20cm, the coating time is 40min, the magnetic force of the strong magnet is 500Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 1.05 to prepare a cell F;
7) coating the film on the front surface; placing a cell F in a vacuum chamber, taking the cell F as an anode, taking silicon nitride as a cathode target, placing a strong magnet behind the cathode target, introducing 5Pa inert gas into the vacuum chamber, applying 2KV direct current negative high pressure to the cathode target for coating, wherein the temperature of the cell E is 265 ℃, the distance between the cell E and a coating material is 40cm, the coating time is 80min, the magnetic force of the strong magnet is 500Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 1.05, placing the cell F in a high-temperature furnace at 1000 ℃, heating the cell F in a nitrogen atmosphere high-purity environment for 25min, cooling the furnace to 100 ℃, and taking out the cell G to obtain the cell G;
8) screen printing: taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing: and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
Example 3
1) Texturing: immersing the cell piece in a mixed aqueous solution of sulfuric acid, hydrofluoric acid and acetic acid at 75 ℃, carrying out ultrasonic treatment simultaneously, cleaning for 2min, then carrying out blow-drying by using an air knife, placing the cell piece in a mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, cleaning for 2min, washing with water, then placing the cell piece in a mixed aqueous solution of potassium hydroxide and isopropanol, carrying out treatment for 2min, washing with water, and carrying out blow-drying by using a nitrogen gun to obtain a cell piece A;
2) low-pressure diffusion: preheating a reaction kettle, introducing nitrogen, placing the cell piece A in the reaction kettle, raising the temperature and the pressure, introducing nitrogen and mixed gas, oxidizing, keeping the gas introduced, lowering the temperature and the pressure, performing low-temperature deposition, then raising the temperature, performing low-pressure diffusion, recovering normal pressure, and oxidizing, wherein the mixed gas is nitrogen and oxygen carrying boron tribromide, so as to prepare a cell piece B;
3) laser scanning: performing secondary diffusion on the cell B by using a laser to form local doping to prepare a cell C, wherein the wavelength of nanosecond pulse laser is 532nm, and the pulse energy is 300 uJ;
4) etching: placing the battery C in hydrofluoric acid to remove surface glass, washing with water, placing the battery C above a corrosive solution, corroding by using the surface tension of the corrosive solution, washing with water again, placing the battery C in a potassium hydroxide aqueous solution at 20 ℃ to perform alkali washing, then washing with water, placing the battery C in a mixed aqueous solution of nitric acid and hydrochloric acid at 90 ℃ to perform treatment for 25min, taking out the battery C, washing with water, and drying the battery C after drying, wherein the corrosive solution is an aqueous solution of nitric acid and hydrofluoric acid at 10 ℃ to obtain a battery piece D;
5) back deposition: placing the cell piece D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 375 ℃ for 5min, heating to 400 ℃ for 10min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 650sccm, and the microwave power is 521W to obtain a cell piece E;
6) back coating: placing a cell E in a vacuum chamber, taking the cell E as an anode, taking silicon nitride as a cathode target, placing a strong magnet behind the cathode target, introducing 10Pa inert gas into the vacuum chamber, and applying 1-3 KV direct current negative high voltage to the cathode target for coating, wherein the temperature of the cell E is 450 ℃, the distance between the cell E and a coating material is 60cm, the coating time is 120min, the magnetic force of the strong magnet is 1000Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 1.12, so as to prepare a cell F;
7) coating the film on the front surface; placing a cell F in a vacuum chamber, taking the cell F as an anode, taking silicon nitride as a cathode target, placing a strong magnet behind the cathode target, introducing 10Pa inert gas into the vacuum chamber, applying 3KV direct current negative high pressure to the cathode target for coating, wherein the temperature of the cell E is 450 ℃, the distance between the cell E and a coating material is 60cm, the coating time is 120min, the magnetic force of the strong magnet is 1000Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 1.12, placing the cell F in a high-temperature furnace at 1100 ℃, heating the cell F in a nitrogen atmosphere with high purity for 30min, cooling the furnace to 110 ℃, and taking out the cell G to obtain the cell G;
8) screen printing: taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing: and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
Example 4
1) Texturing: immersing the cell slice in a mixed aqueous solution of sulfuric acid, hydrofluoric acid and acetic acid at 60 ℃, carrying out ultrasonic treatment simultaneously, cleaning for 1.2min, then carrying out blow-drying by using an air knife, placing the cell slice in a mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, cleaning for 1.2min, washing with water, then placing the cell slice in a mixed aqueous solution of potassium hydroxide and isopropanol, carrying out treatment for 1.2min, washing with water, and carrying out blow-drying by using a nitrogen gun to obtain a cell slice A;
2) low-pressure diffusion: preheating a reaction kettle, introducing nitrogen, placing the cell piece A in the reaction kettle, raising the temperature and the pressure, introducing nitrogen and mixed gas, oxidizing, keeping the gas introduced, lowering the temperature and the pressure, performing low-temperature deposition, then raising the temperature, performing low-pressure diffusion, recovering normal pressure, and oxidizing, wherein the mixed gas is nitrogen and oxygen carrying boron tribromide, so as to prepare a cell piece B;
3) laser scanning: performing secondary diffusion on the cell B by using a laser to form local doping to prepare a cell C, wherein the wavelength of nanosecond pulse laser is 532nm, and the pulse energy is 190 uJ;
4) etching: placing the battery C in hydrofluoric acid to remove surface glass, washing with water, placing above a corrosive solution, corroding by using the surface tension of the corrosive solution, washing with water again, placing in a potassium hydroxide aqueous solution at 18 ℃ for alkali washing, then washing with water, placing in a mixed aqueous solution of nitric acid and hydrochloric acid at 80 ℃ for treating for 20min, taking out, washing with water, and drying by blowing, wherein the corrosive solution is an aqueous solution of nitric acid and hydrofluoric acid at 5 ℃ to obtain a battery piece D;
5) back deposition: placing the cell D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 350 ℃ for 3min, heating to 387 ℃ for 7min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 600sccm, and the microwave power is 431W to obtain a cell E;
6) back coating: placing a cell E in a vacuum chamber, taking the cell as an anode, taking silicon nitride as a cathode target, placing a strong magnet behind the cathode target, introducing 5Pa inert gas into the vacuum chamber, and applying 13.56MHz radio frequency voltage to the cathode target for coating, wherein the temperature of the cell E is 265 ℃, the distance between the cell E and a coating material is 20cm, the coating time is 40min, the magnetic force of the strong magnet is 500Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 1.05 to prepare a cell F;
7) coating the film on the front surface; placing a cell piece F in a vacuum chamber, taking the cell piece F as an anode, taking silicon nitride as a cathode target material, placing a strong magnet behind the cathode target material, introducing 5Pa inert gas into the vacuum chamber, applying 13.56MHz radio frequency voltage to the cathode target material for coating, wherein the temperature of the cell piece E is 265 ℃, the distance between the cell piece E and a coating material is 40cm, the coating time is 80min, the magnetic force of the strong magnet is 500Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 1.05, then placing the cell piece F in a high-temperature furnace at 1000 ℃, heating the cell piece E for 25min in a high-purity nitrogen atmosphere, cooling the furnace to 100 ℃, and taking out to obtain the cell piece G;
8) screen printing: taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing: and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
Example 5
Compared with the embodiment 2, the step 2) of low-pressure diffusion in the embodiment 5 comprises two times of low-pressure diffusion, boron is diffused at the top of the battery piece, and the mixed gas is nitrogen and oxygen carrying boron tribromide; diffusing phosphorus at the bottom of the cell piece, wherein the mixed gas is nitrogen and oxygen with phosphorus oxychloride; the remaining steps were the same as in example 2.
Example 6
Compared with the embodiment 2, the step 2) of low-pressure diffusion in the embodiment 5 comprises two times of low-pressure diffusion, boron is diffused at the top of the battery piece, and the mixed gas is nitrogen and oxygen carrying boron tribromide; diffusing phosphorus at the bottom of the cell piece, wherein the mixed gas is nitrogen and oxygen with phosphorus oxychloride; step 8) before silk-screen printing, a secondary coating process is also included: taking a battery piece, inclining the battery piece by 45 degrees, placing the battery piece in a mixed solution, standing for 45min, then floating the battery piece out to be flush with the water surface of the mixed solution, and performing 45-degree oblique angle scanning by using an electron beam, wherein the mixed solution is a mixed aqueous solution of tetrabutyl titanate, tetrabutyl stannate, palmitic acid, 3-aminopropyltriethoxysilane, isopropanol, hydrochloric acid and acetylacetone; the remaining steps were the same as in example 2.
Comparative example 1
Compared with the embodiment 2, the step 6) of back coating is chemical vapor deposition, and the rest steps are the same as the embodiment 2.
Comparative example 2
Compared with the embodiment 2, the step 7) of front surface coating is chemical vapor deposition, and the rest steps are the same as the embodiment 2.
Comparative example 3
Compared with the embodiment 2, the back coating of the step 6) and the front coating of the step 7) are both chemical vapor deposition, and the rest steps are the same as the embodiment 2.
Experiment of
The solar cells prepared in examples 1 to 6 and comparative examples 1 to 3 were used to detect the open-circuit voltage, the short-circuit current and the conversion efficiency of the cell, and the detection results were recorded, and the following data were obtained:
from the data in the table above, it is clear that the following conclusions can be drawn:
the solar cells prepared in examples 1 to 6 and comparative examples 1 to 3 form a contrast experiment, and the detection results show that the open-circuit voltage and the short-circuit current in examples 1 to 4 are obviously improved compared with those in comparative example 3, the conversion efficiency is improved, and the photoelectric conversion efficiency of the solar cell is improved; compared with comparative examples 1-2, the open-circuit voltage, the short-circuit current and the conversion efficiency are slightly improved in the example 2, and the preparation of silicon nitride in a magnetron sputtering mode can promote the improvement of the efficiency of the solar cell; in example 2, compared with examples 5 to 6, the open circuit voltage, the short circuit current, and the conversion efficiency were slightly improved, and it was found that the increased number of steps can promote the improvement of the efficiency of the solar cell, and the effect was stable and highly practical.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A preparation process of a PERC battery prepared by adopting a magnetron sputtering method is characterized by comprising the following steps:
1) texturing:
immersing the cell in a mixed aqueous solution of sulfuric acid, hydrofluoric acid and acetic acid at 45-75 ℃, carrying out ultrasonic treatment, cleaning for 0.5-2 min, then carrying out blow-drying by using an air knife, placing the cell in a mixed aqueous solution of sulfuric acid, hydrofluoric acid, acetic acid and sodium dodecyl benzene sulfonate, cleaning for 0.5-2 min, washing with water, then placing the cell in a mixed aqueous solution of potassium hydroxide and isopropanol, carrying out treatment for 0.5-2 min, washing with water, and carrying out blow-drying by using a nitrogen gun to obtain a cell A;
2) low-pressure diffusion:
preheating a reaction kettle, introducing nitrogen, placing the cell A in the reaction kettle, raising the temperature and the pressure, introducing nitrogen and mixed gas, oxidizing, keeping the introduction of the gas, lowering the temperature and the pressure, performing low-temperature deposition, then raising the temperature, performing low-pressure diffusion, and recovering normal pressure to perform oxidation, wherein the mixed gas is nitrogen and oxygen carrying sources to prepare a cell B;
3) laser scanning:
performing secondary diffusion on the cell B by using a laser to form local doping, and preparing a cell C, wherein the wavelength of nanosecond pulse laser is 532nm, and the pulse energy is 80-300 uJ;
4) etching:
placing the battery C in hydrofluoric acid to remove surface glass, washing with water, placing the battery C above a corrosive solution, corroding with the surface tension of the corrosive solution, washing with water again, placing the battery C in a 15-20 ℃ potassium hydroxide aqueous solution for alkali washing, then washing with water, placing the battery C in a 70-90 ℃ nitric acid and hydrochloric acid mixed aqueous solution for treating for 15-25 min, taking out the water, and drying by blowing, wherein the corrosive solution is an 0-10 ℃ nitric acid and hydrofluoric acid aqueous solution, so as to obtain a battery piece D;
5) back deposition:
placing the cell D in a reaction kettle, introducing mixed gas of trimethylaluminum, tert-butyl alcohol and argon, reacting at 325-375 ℃ for 1-5 min, heating to 375-400 ℃ for 5-10 min, and simultaneously performing microwave treatment, wherein the flow of the mixed gas is 550-650 sccm, and the microwave power is 342-521W, so as to prepare a cell E;
6) back coating:
placing a cell E in a vacuum chamber, taking the cell as an anode, taking silicon nitride as a cathode target, placing a strong magnet at the back of the cathode target, introducing 0.1-10 Pa inert gas into the vacuum chamber, and applying 1-3 KV direct current negative high voltage or 13.56MHz radio frequency voltage to the cathode target for film coating, wherein the temperature of the cell E is 80-450 ℃, the distance between the cell E and a film coating material is 20-60 cm, the film coating time is 40-120 min, the magnetic force of the strong magnet is 100-1000 Gauss, the inert gas is argon and nitrogen, and the mass ratio of the argon to the nitrogen is 0.97-1.12, so as to prepare a cell F;
7) coating the film on the front surface;
placing a battery piece F in a vacuum chamber, taking the battery piece F as an anode, taking silicon nitride as a cathode target material, placing a strong magnet behind the cathode target material, introducing 0.1-10 Pa inert gas into the vacuum chamber, applying 1-3 KV direct current negative high voltage or 13.56MHz radio frequency voltage to the cathode target for film coating, wherein the temperature of the battery piece E is 80-450 ℃, the distance between the battery piece E and a film coating material is 20-60 cm, the film coating time is 40-120 min, the magnetic force of the strong magnet is 100-1000 Gauss, the inert gas is argon and nitrogen, the mass ratio of the argon to the nitrogen is 0.97-1.12, then placing the battery piece F in a high-temperature furnace at 900-1100 ℃, heating for 20-30 min in a high-purity nitrogen atmosphere, and taking out the furnace when the furnace is cooled to 90-110 ℃ to obtain a battery piece G;
8) screen printing:
taking a cell G, removing a coating on the surface of the cell by utilizing a laser grooving technology to form electrode grooves, respectively printing silver/aluminum paste and silver paste on the electrode grooves at the top and the bottom of the cell G, carrying out co-sintering through an infrared belt sintering furnace to form a front electrode and a back electrode, and covering the electrodes on a local doping surface formed by laser scanning to prepare a cell H;
9) and (3) testing:
and taking the cell H obtained in the last step, detecting various performances of the cell H, and sorting out qualified cells to obtain finished solar cells.
2. The process of claim 1, wherein the PERC cell is prepared by magnetron sputtering, and the process comprises the following steps: the low-pressure diffusion in the step 2) comprises two times of low-pressure diffusion, boron is diffused at the top of the battery piece, and the mixed gas is nitrogen and oxygen carrying boron tribromide; phosphorus is diffused at the bottom of the cell piece, and the mixed gas is nitrogen and oxygen with phosphorus oxychloride.
3. The process of claim 1, wherein the PERC cell is prepared by magnetron sputtering, and the process comprises the following steps: the step 8) of the method also comprises a secondary coating process before silk-screen printing: and (3) inclining the battery piece by 20-70 degrees, placing the battery piece in the mixed solution, standing for 30-60 min, then floating the battery piece out to be flush with the water surface of the mixed solution, and performing oblique angle scanning of 20-70 degrees by using an electron beam, wherein the mixed solution is a mixed aqueous solution of tetrabutyl titanate, tetrabutyl stannate, palmitic acid, 3-aminopropyltriethoxysilane, isopropanol, hydrochloric acid and acetylacetone.
4. The PERC battery prepared by the magnetron sputtering method and prepared by the preparation process according to any one of claims 1 to 3 comprises a first antireflection layer, a battery piece and a second antireflection layer, and is characterized in that: the solar cell comprises a solar cell body and is characterized in that a first antireflection layer is arranged on the top of the solar cell body, a front electrode is arranged on the top of the first antireflection layer, a passivation layer is arranged on the bottom of the solar cell body, a second antireflection layer is arranged on the bottom of the passivation layer, and a back electrode is arranged on the bottom of the second antireflection layer.
5. The PERC battery prepared by the magnetron sputtering method according to claim 4, wherein: the thickness of the passivation layer is 1-5 nm, the thickness of the first antireflection layer is 60-90 nm, and the thickness of the second antireflection layer is 75-105 nm.
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