CN105845775A - Back multilayer coating method of PERC crystalline silicon solar cell - Google Patents
Back multilayer coating method of PERC crystalline silicon solar cell Download PDFInfo
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- CN105845775A CN105845775A CN201610244770.XA CN201610244770A CN105845775A CN 105845775 A CN105845775 A CN 105845775A CN 201610244770 A CN201610244770 A CN 201610244770A CN 105845775 A CN105845775 A CN 105845775A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 17
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 17
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 17
- 238000000576 coating method Methods 0.000 title abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 16
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 13
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 13
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000005137 deposition process Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000000415 inactivating effect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a manufacturing technology of a crystalline silicon solar cell, in particular to a back multilayer coating method of a PERC crystalline silicon solar cell. The back multilayer coating method comprises the steps of: a, adopting an ALD or PECVD method for depositing an Al2O3 passivation film on the back of a Si substrate; b, and adopting the PECVD method for depositing multilayer back SiNx films on the Al2O3 passivation film in a continuous deposition process, wherein refractive indexes of the layers of SiNx films are reduced gradually from inside to outside. The back multilayer coating method can improve passivation effect and back reflectivity of the solar cell so as to increase cell efficiency, and is simple and easy to implement processing steps.
Description
Technical field
The present invention relates to the manufacturing technology of crystal silicon solar energy battery, a kind of back side multicoating method of PERC crystal-silicon solar cell.
Background technology
Along with improving constantly of crystal-silicon solar cell technology, the volume production conversion efficiency of the single crystal silicon solar cell of traditional structure has reached 19.8%, and polycrystalline silicon solar cell volume production conversion efficiency has reached 18.4%.Traditional structure battery efficiency has not had the biggest room for promotion, and the lifting of battery efficiency must rely on the crystal-silicon solar cell of new structure to develop.In current existing silicon substrate high-efficiency battery technology, owing to the technique promoting battery efficiency is moved to cell backside by passivation emitter and back surface battery (PERC battery), therefore it has extraordinary compatibility with other high-efficiency battery technology and the manufacturing process of new raising battery efficiency.PERC battery can be incorporated in the manufacturing of silicon solar cell with other high efficiency technicals simultaneously.So PERC battery is most possibly by the technology of commercial introduction in current high-efficiency battery, studies its batch production technique and the large-scale production of PERC battery is had extraordinary directiveness effect.
PERC cell backside passivation mode mainly uses ALD and PECVD to prepare the mode of Al2O3 thin film; owing to Al2O3 thickness is relatively thin, need to plate SiNx film and protect, and strengthen back reflection rate; to improve open-circuit voltage, short circuit current, thus improve cell photoelectric conversion efficiency.Back side SiNx film is usually one layer, or two-layer at present, and back reflection rate increase rate is less.Multilayer film technique use thin film generally have the film layers such as MgF2, ZnS, TiO2, SiO2, the more difficult control of technique, relatively costly.
Summary of the invention
The technical problem to be solved is to provide one can improve solar cell inactivating effect and backside reflection rate, and to improve battery efficiency, processing step is simple simultaneously, the back side multicoating method of PERC crystal-silicon solar cell that is easily achieved.
The back side multicoating method of the PERC crystal-silicon solar cell of the present invention comprises the following steps:
A. ALD or PECVD depositing Al are used at Si substrate back2O3Passivating film；
B. at Al2O3PECVD is used to deposit multilamellar back side SiN in the deposition process of one-time continuous on passivating filmxFilm, each layer SiNxFilm refractive index from the inside to the outside is sequentially reduced.
Described Al2O3Passivation film thickness is 3-20nm, and refractive index is 1.4-2.0；Described back side SiNxFilm has three layers, wherein: near Al2O3The innermost layer back side SiN of passivating filmxFilm thickness is 10-50nm, and refractive index is 2.2-2.6；Middle one layer of back side SiNxFilm thickness is 20-100nm, and refractive index is 2.0-2.4；Outermost layer back side SiNxFilm thickness is 40-200nm, and refractive index is 1.6-2.0.
In described step b, multilamellar back side SiNxThe material that film deposition process uses is SiH4And NH3, by regulation SiH4And NH3Flow-control different layers SiNxThin-film refractive index.
The positive effect of the present invention is embodied in: 1, passivating film depositing Al2O, good passivation effect, battery open circuit voltage is greatly improved, and is suitable to volume production；2, can produce line in conventional batteries and realize the preparation of multilayer film, technology stability is easily controllable；3, by the multilamellar back side reflection enhancing coating in gradually changed refractive index face, make battery minority carrier collect and increase, battery short circuit electric current can be improved, and then improve battery efficiency.
Detailed description of the invention
Embodiment, the preparation process of PERC crystal-silicon solar cell:
1, monocrystalline silicon piece is carried out making herbs into wool process, form pyramid matte；
2, diffusion is for PN junction；
3, flash trimming knot and surface defect are gone in polishing, make back surface smooth；
4, by ALD deposition Al2O3；
5, PECVD completes multilamellar back side SiNxFilm layer, and front SiNxAnti-reflection layer；Multilamellar back side SiNxThe material that film deposition process uses is SiH4And NH3, by regulation SiH4And NH3Flow-control different layers SiNxThin-film refractive index；
The multilayer film preparation parameter chosen is for such as following table:
| Back side film layer | Refractive index | Thickness |
| Al2O3 film layer | 1.65 | 20 nm |
| Ground floor SiNx | 2.4 | 30 nm |
| Second layer SiNx | 2.2 | 40 nm |
| Third layer SiNx | 2 | 60 nm |
6, lbg is used at back surface；
7, silk screen printing forms anelectrode, back electrode and back surface field；
8, sintering makes to form good Ohmic contact between metal and silicon；
9, the electrical property of battery is tested.
The PERC battery prepared according to above-described embodiment method, relatively backside deposition Al2O3Film and monolayer SiNxFilm PERC battery, short circuit current improves 28 mA, opens pressure and improves 2 mV, and photoelectric transformation efficiency improves 0.1%, more than 21%.This back side multilayer film technique visible can improve backside reflection rate, reaches expected results.
Claims (3)
1. a back side multicoating method for PERC crystal-silicon solar cell, is characterized in that: comprise the following steps,
A. ALD or PECVD depositing Al are used at Si substrate back2O3Passivating film；
B. at Al2O3PECVD is used to deposit multilamellar back side SiN in the deposition process of one-time continuous on passivating filmxFilm, each layer SiNxFilm refractive index from the inside to the outside is sequentially reduced.
The back side multicoating method of PERC crystal-silicon solar cell the most according to claim 1, is characterized in that: in described step b, multilamellar back side SiNxThe material that film deposition process uses is SiH4And NH3, by regulation SiH4And NH3Flow-control different layers SiNxThin-film refractive index.
The back side multicoating method of PERC crystal-silicon solar cell the most according to claim 1 and 2, is characterized in that: described Al2O3Passivation film thickness is 3-20nm, and refractive index is 1.4-2.0；Described back side SiNxFilm has three layers, wherein: near Al2O3The innermost layer back side SiN of passivating filmxFilm thickness is 10-50nm, and refractive index is 2.2-2.6；Middle one layer of back side SiNxFilm thickness is 20-100nm, and refractive index is 2.0-2.4；Outermost layer back side SiNxFilm thickness is 40-200nm, and refractive index is 1.6-2.0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610244770.XA CN105845775A (en) | 2016-04-19 | 2016-04-19 | Back multilayer coating method of PERC crystalline silicon solar cell |
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|---|---|---|---|
| CN201610244770.XA CN105845775A (en) | 2016-04-19 | 2016-04-19 | Back multilayer coating method of PERC crystalline silicon solar cell |
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| CN105845775A true CN105845775A (en) | 2016-08-10 |
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| CN201610244770.XA Pending CN105845775A (en) | 2016-04-19 | 2016-04-19 | Back multilayer coating method of PERC crystalline silicon solar cell |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106169510A (en) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
| CN109037358A (en) * | 2018-08-01 | 2018-12-18 | 通威太阳能（成都）有限公司 | A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery |
| CN109192813A (en) * | 2018-08-20 | 2019-01-11 | 常州亿晶光电科技有限公司 | PERC cell backside passivation technology |
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
| CN109638110A (en) * | 2018-12-18 | 2019-04-16 | 韩华新能源（启东）有限公司 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
| WO2019076065A1 (en) * | 2017-10-16 | 2019-04-25 | 常州亿晶光电科技有限公司 | Preparation method for rear surface silicon nitride multilayer film of perc |
| CN109786477A (en) * | 2019-01-24 | 2019-05-21 | 江西展宇新能源股份有限公司 | A kind of preparation method of anti-PID two-sided PERC battery multilayer passivating film and two-sided PERC battery |
| WO2019148535A1 (en) * | 2018-02-05 | 2019-08-08 | 通威太阳能（安徽）有限公司 | Perc battery structure having anti-pid performance and preparation method therefor |
| CN110473921A (en) * | 2019-06-25 | 2019-11-19 | 阜宁苏民绿色能源科技有限公司 | A kind of PERC battery back passivating structure and preparation method |
| CN110534590A (en) * | 2019-08-16 | 2019-12-03 | 上海交通大学 | A kind of silicon nitride film and preparation method thereof improving solar cell long-wave response |
| CN111769175A (en) * | 2019-03-15 | 2020-10-13 | 中国科学院物理研究所 | PERC single crystalline silicon solar cell and preparation method thereof |
| CN112234115A (en) * | 2020-09-30 | 2021-01-15 | 通威太阳能（成都）有限公司 | Efficient back passivation layer crystalline silicon solar cell and preparation method thereof |
| CN117747677A (en) * | 2023-12-19 | 2024-03-22 | 滁州亿晶光电科技有限公司 | Composite sandwich back film silicon nitride structure for solar cell and generation method thereof |
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| CN103579379A (en) * | 2013-11-08 | 2014-02-12 | 英利集团有限公司 | Crystal silicon solar cell and manufacturing method thereof |
| US20140311563A1 (en) * | 2011-10-07 | 2014-10-23 | Total Marketing Services | Method Of Manufacturing A Solar Cell With Local Back Contacts |
| CN105097961A (en) * | 2015-06-03 | 2015-11-25 | 北京七星华创电子股份有限公司 | Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells |
-
2016
- 2016-04-19 CN CN201610244770.XA patent/CN105845775A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140311563A1 (en) * | 2011-10-07 | 2014-10-23 | Total Marketing Services | Method Of Manufacturing A Solar Cell With Local Back Contacts |
| CN103579379A (en) * | 2013-11-08 | 2014-02-12 | 英利集团有限公司 | Crystal silicon solar cell and manufacturing method thereof |
| CN105097961A (en) * | 2015-06-03 | 2015-11-25 | 北京七星华创电子股份有限公司 | Preparation method of passivated emitter and rear side cell (PERC) and passivated emitter and rear total diffused (PERT) solar cells |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106169510A (en) * | 2016-09-29 | 2016-11-30 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
| WO2019076065A1 (en) * | 2017-10-16 | 2019-04-25 | 常州亿晶光电科技有限公司 | Preparation method for rear surface silicon nitride multilayer film of perc |
| WO2019148535A1 (en) * | 2018-02-05 | 2019-08-08 | 通威太阳能（安徽）有限公司 | Perc battery structure having anti-pid performance and preparation method therefor |
| CN109037358A (en) * | 2018-08-01 | 2018-12-18 | 通威太阳能（成都）有限公司 | A method of promoting the board-like PECVD plated film production capacity of two-sided PERC battery |
| CN109192813A (en) * | 2018-08-20 | 2019-01-11 | 常州亿晶光电科技有限公司 | PERC cell backside passivation technology |
| CN109244149A (en) * | 2018-09-10 | 2019-01-18 | 通威太阳能（合肥）有限公司 | PECVD back film layer structure based on PERC single crystal battery and preparation method |
| CN109638110A (en) * | 2018-12-18 | 2019-04-16 | 韩华新能源（启东）有限公司 | A kind of preparation method based on two-sided PERC cell piece back side SiNx multi-layer film structure |
| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
| CN109786477A (en) * | 2019-01-24 | 2019-05-21 | 江西展宇新能源股份有限公司 | A kind of preparation method of anti-PID two-sided PERC battery multilayer passivating film and two-sided PERC battery |
| CN111769175A (en) * | 2019-03-15 | 2020-10-13 | 中国科学院物理研究所 | PERC single crystalline silicon solar cell and preparation method thereof |
| CN110473921A (en) * | 2019-06-25 | 2019-11-19 | 阜宁苏民绿色能源科技有限公司 | A kind of PERC battery back passivating structure and preparation method |
| CN110534590A (en) * | 2019-08-16 | 2019-12-03 | 上海交通大学 | A kind of silicon nitride film and preparation method thereof improving solar cell long-wave response |
| CN112234115A (en) * | 2020-09-30 | 2021-01-15 | 通威太阳能（成都）有限公司 | Efficient back passivation layer crystalline silicon solar cell and preparation method thereof |
| CN117747677A (en) * | 2023-12-19 | 2024-03-22 | 滁州亿晶光电科技有限公司 | Composite sandwich back film silicon nitride structure for solar cell and generation method thereof |
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Address after: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Applicant after: Jinneng clean energy technology stock company Address before: 033000 Wenshui County Economic Development Zone, Lvliang, Shanxi Applicant before: Jin Neng Clean-tech Co., Ltd |
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