CN104409565A - Solar cell and manufacturing method thereof - Google Patents
Solar cell and manufacturing method thereof Download PDFInfo
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- CN104409565A CN104409565A CN201410605217.5A CN201410605217A CN104409565A CN 104409565 A CN104409565 A CN 104409565A CN 201410605217 A CN201410605217 A CN 201410605217A CN 104409565 A CN104409565 A CN 104409565A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 135
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 135
- 239000004065 semiconductor Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 238000007747 plating Methods 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 85
- 229910052710 silicon Inorganic materials 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 85
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 78
- 239000006117 anti-reflective coating Substances 0.000 claims description 77
- 235000012239 silicon dioxide Nutrition 0.000 claims description 39
- 239000000377 silicon dioxide Substances 0.000 claims description 39
- 239000007888 film coating Substances 0.000 claims description 34
- 238000009501 film coating Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 17
- 238000000151 deposition Methods 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 34
- 238000002161 passivation Methods 0.000 abstract description 30
- 238000006243 chemical reaction Methods 0.000 abstract description 25
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000010030 laminating Methods 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 74
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 28
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 14
- 229910021529 ammonia Inorganic materials 0.000 description 14
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 229910000077 silane Inorganic materials 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 12
- 229910002804 graphite Inorganic materials 0.000 description 12
- 239000010439 graphite Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000004936 stimulating effect Effects 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a solar cell and a manufacturing method thereof. The solar cell comprises a first type semiconductor substrate, a second type doping layer, an anti-reflection film, an upper electrode and a lower electrode, wherein the anti-reflection film is formed by laminating a first silicon nitride layer formed by employing a tubular type film-plating machine and a second silicon nitride layer formed by employing a flat film-plating machine; the first silicon nitride layer is formed through the tubular type film-plating machine and is relatively compact film layer, the second silicon nitride layer is formed through the flat film-plating machine and has relatively uniform color, so advantages of a low frequency furnace tube and a high frequency plate are integrated, the plated anti-reflection film not only has the relatively good passivation effect and quite uniform color, moreover, the solar cell further has anti-PID characteristics. Through improving the composition structure of the anti-reflection film, quality of the anti-reflection film is improved, and photoelectric conversion efficiency of the solar cell is further improved.
Description
Technical field
The invention belongs to area of solar cell, relate to a kind of solar cell and preparation method thereof.
Background technology
The part such as the P-type layer that common crystal silicon solar energy battery is made up of backplate, semi-conducting material, N-type layer, P-N junction, antireflection film, positive gate electrode forms.When solar irradiation is mapped to solar cell surface, antireflection film and suede structure effectively can reduce the light reflection loss of battery surface.After semiconductor structure in solar cell absorbs solar energy.Excite and produce electronics, hole pair, electronics, hole separate by the inner P-N junction built-in field of semiconductor, and electron stream enters N district, hole flows into P district, form photoproduction electric field, if can the positive and negative electrode of battery be connected with external circuit very much by crystalline silicon, in external circuit, just have photogenerated current to pass through.
The manufacturing process of solar cell comprises making herbs into wool, diffusion, etching, plated film, silk screen printing and the sorting of IV efficiency.The effect of plated film is at wafer (wafer) plated surface last layer antireflective coating, effectively can reduce the reflection of light, increases cell piece to the absorption of sunlight; Hydrogen (H) in addition in film can enter in silicon crystal, the defect in passivation silicon, reduces surface density of states, suppresses battery surface compound, increases minority carrier life time, thus improves short circuit current Isc and the open circuit voltage Voc of solar cell.
At present, the plated film segment process in solar battery sheet processing procedure is divided into tubular film plating and plate plated film.Such as, tubular type low frequency coating machine CT stove, frequency is 40KHz, and its plated film is finer and close, good passivation effect; Plate high frequency coating machine Roth & Rau, frequency is 2450MHz, and comparatively tube furnace is even for its plated film color.The i.e. good passivation effect of existing low frequency boiler tube plated film, but uneven color; And high frequency flat plate plated film color is comparatively even, but the passivation effect of film does not have the former good.
In prior art, the antireflective coating of solar cell is made up of one or more layers silicon nitride film, and each layer in antireflective coating all completes in same board, is difficult to obtain higher quality.
PID (Potential Induced Degradation) effect is called high pressure induced attenuation effect.PID effect makes battery surface passivation effect worsen and forms loop of electric leakage, causes fill factor, curve factor, open circuit voltage, short circuit current to reduce, makes assembly property lower than design standard.PID effect can make component power decline more than 30%.The key solving PID problem produces the solar battery sheet with anti-PID ability.
At present, development high-efficiency battery technology improves the key of solar battery efficiency, and no matter be conventional solar cells sheet or anti-PID solar cell, and the quality improving antireflective coating improves a kind of effective way of solar battery efficiency.Therefore, how to improve the composition structure of antireflective coating, the quality improving antireflective coating becomes those skilled in the art's technical problem urgently to be resolved hurrily.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of solar cell and preparation method thereof, the problem that the antireflective coating performance for solving solar cell in prior art is bad.
For achieving the above object and other relevant objects, the invention provides a kind of manufacture method of solar cell, comprise the following steps:
S1: provide the silicon chip that comprises first kind Semiconductor substrate and Second Type doped layer from bottom to top successively, adopts tubular film plating machine to deposit the first silicon nitride layer at described silicon chip upper surface;
S2: adopt flat plate film coating machine to deposit the second silicon nitride layer at described first silicon nitride layer upper surface; Described second silicon nitride layer and described first silicon nitride layer are jointly as antireflective coating;
S3: make top electrode on described antireflective coating, makes bottom electrode at the described silicon chip back side, obtains solar cell.
Alternatively, in described step S1, first form a silicon dioxide layer at described silicon chip upper surface, then at described first silicon nitride layer of described silicon dioxide layer upper surface deposition.
Alternatively, adopt thermal oxidation, plasma reinforced chemical vapour deposition, UV-irradiation or ozone oxidation method form described silicon dioxide layer.
Alternatively, in described step S2, be also included in the step of described second silicon nitride layer upper surface depositing silicon oxynitride silicon layer.
Alternatively, described flat plate film coating machine is adopted to form described silicon oxynitride layer.
Alternatively, the refractive index of described second silicon nitride layer is less than the refractive index of described first silicon nitride layer.
The present invention also provides a kind of solar cell, comprising:
First kind Semiconductor substrate;
Second Type doped layer, is formed at described first kind semiconductor substrate surface;
Antireflective coating, is formed at described Second Type doped layer surface;
Top electrode, is formed at described antireflective coating surface;
Bottom electrode, is formed at the described first kind Semiconductor substrate back side;
Wherein:
The second silicon nitride layer that described antireflective coating is formed by the first silicon nitride layer adopting tubular film plating machine to be formed and employing flat plate film coating machine superposes and forms.
Alternatively, a silicon dioxide layer is also formed with between described Second Type doped layer and described antireflective coating.
Alternatively, a silicon oxynitride layer is also formed with between described antireflective coating and described top electrode.
Alternatively, the thickness range of described first silicon nitride layer is 30 ~ 40nm, and ranges of indices of refraction is 2.14 ~ 2.21; The thickness range of described second silicon nitride layer is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.
As mentioned above, solar cell of the present invention and preparation method thereof, there is following beneficial effect: in solar cell of the present invention, antireflective coating is superposed by the first silicon nitride layer and the second silicon nitride layer and forms, wherein, described first silicon nitride layer is formed by tubular film plating machine, and rete is comparatively fine and close, good passivation effect; Described second silicon nitride layer is formed by flat plate film coating machine, and color is more even.Thus combining the advantage of low frequency boiler tube and high frequency flat plate, the antireflective coating plated out both had had good passivation effect, and color is also very even.Meanwhile, silicon dioxide layer can be set between silicon substrate and antireflective coating, or silicon oxynitride layer is set between antireflective coating and top electrode, make solar cell have anti-PID characteristic; Or both silicon dioxide layer is set between silicon substrate and antireflective coating, also silicon oxynitride layer is set between antireflective coating and top electrode, the anti-PID characteristic of solar cell is improved further.The present invention, by improving the composition structure of antireflective coating, improves the quality of antireflective coating, thus improves the photoelectric conversion efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is shown as the film layer structure schematic diagram of solar cell of the present invention in embodiment one.
Fig. 2 is shown as the film layer structure schematic diagram of solar cell of the present invention in embodiment two.
Fig. 3 is shown as the film layer structure schematic diagram of solar cell of the present invention in embodiment three.
Fig. 4 is shown as the film layer structure schematic diagram of solar cell of the present invention in embodiment four.
Element numbers explanation
1 silicon chip
11 first kind Semiconductor substrate
12 Second Type doped layers
2 antireflective coatings
21 first silicon nitride layers
22 second silicon nitride layers
3 top electrodes
4 bottom electrodes
5 silicon dioxide layers
6 silicon oxynitride layers
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this specification can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this specification also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 1 to Fig. 4.It should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, then only the assembly relevant with the present invention is shown in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
Embodiment one
The invention provides a kind of solar cell, refer to Fig. 1, be shown as the film layer structure schematic diagram of described solar cell, comprise:
First kind Semiconductor substrate 11;
Second Type doped layer 12, is formed at described first kind Semiconductor substrate 11 surface;
Antireflective coating 2, is formed at described Second Type doped layer 12 surface;
Top electrode 3, is formed at described antireflective coating 2 surface;
Bottom electrode 4, is formed at described first kind Semiconductor substrate 11 back side;
Wherein:
The second silicon nitride layer 22 that described antireflective coating 2 is formed by the first silicon nitride layer 21 adopting tubular film plating machine to be formed and employing flat plate film coating machine is formed by stacking.
Concrete, the thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, and ranges of indices of refraction is 2.14 ~ 2.21; The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.
The manufacture method of the solar cell of the present embodiment is as follows, comprises the following steps:
Step S1: provide the silicon chip 1 that comprises first kind Semiconductor substrate 11 and Second Type doped layer 12 from bottom to top successively, adopts tubular film plating machine to deposit the first silicon nitride layer 21 at described silicon chip 1 upper surface.
Concrete, the described first kind and Second Type refer to semiconductor doping type, if the first kind is P type, then Second Type is N-type; If the first kind is N-type, then Second Type is P type.In the present embodiment, described first kind Semiconductor substrate 11 is for P type polysilicon matrix, and described Second Type doped layer 12 obtains by carrying out N-type doping (as mixing phosphorus) on described first kind Semiconductor substrate 11 surface.In other embodiments, described first kind Semiconductor substrate also can adopt monocrystalline silicon.
Concrete, described tubular film plating machine can adopt model conventional on the market, in the present embodiment, for the tubular film plating machine of Centrotherm company.Described silicon chip 1 is put into graphite boat as electrode, and inserts tubular film plating machine reaction cavity with graphite boat, pass into silane and ammonia as reaction source, and adopt radio-frequency power supply to excite ionization, obtain the first silicon nitride layer 21 in described silicon chip 1 upper surface deposition.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, ranges of indices of refraction is 2.14 ~ 2.21, the technological parameter such as ratio, flow, reaction temperature by adjustment ammonia and silane obtains corresponding refractive index and thickness, and this is the ordinary skill in the art, repeats no more herein.
In this step, deposit described first silicon nitride layer 21 by low frequency tubular type coating machine, stimulating frequency is no more than 13.56MHz, and in the present embodiment, stimulating frequency is for 40KHz.The the first silicon nitride layer quality obtained by low frequency tubular type coating machine is comparatively fine and close, good passivation effect, can the dangling bonds of effective passivation silicon chip surface.
Step S2: adopt flat plate film coating machine to deposit the second silicon nitride layer 22 at described first silicon nitride layer 21 upper surface.
In the present embodiment, described flat plate film coating machine is for the plate coating machine of Roth & Rau company, and frequency is 2450MHz.
Concrete, the silicon chip 1 being coated with the first silicon nitride layer is placed on the graphite frame of flat plate film coating machine, adopts the ionization of microwave glow discharge excitation, obtain the second silicon nitride layer 22 in described first silicon nitride layer 21 upper surface deposition.Described second silicon nitride layer 22 is formed by flat plate film coating machine, and color is more even.
The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.The technological parameter such as ratio, flow, reaction temperature equally by adjustment ammonia and silane obtains corresponding refractive index and thickness.
Described second silicon nitride layer 22 is common as antireflective coating 2 with described first silicon nitride layer 21, and combine the advantage of low frequency boiler tube and high frequency flat plate, the antireflective coating plated out both had had good passivation effect, and color is also very even.
Step S3: make top electrode 3 on described antireflective coating 2, makes bottom electrode 4 at described silicon chip 1 back side, obtains solar cell.
Concrete, described top electrode 3 and bottom electrode 4 obtain by silk screen printing, and in the present embodiment, described top electrode 3 is for silver, and described bottom electrode is for aluminium.
So far, make and obtain solar cell, in this solar cell, antireflective coating is superposed by the first silicon nitride layer and the second silicon nitride layer and forms, and wherein, described first silicon nitride layer is formed by tubular film plating machine, and rete is comparatively fine and close, good passivation effect; Described second silicon nitride layer is formed by flat plate film coating machine, and color is comparatively even, and antireflective coating entirety has good passivation effect, and color is also very even.The present invention, by improving the composition structure of antireflective coating, improves the quality of antireflective coating, thus improves the photoelectric conversion efficiency of solar cell.
Embodiment two
The present embodiment adopts substantially identical technical scheme with embodiment one, and difference is, the solar cell of the present embodiment has anti-PID characteristic.
Refer to Fig. 2, be shown as the film layer structure schematic diagram of the solar cell of the present embodiment, comprise:
First kind Semiconductor substrate 11;
Second Type doped layer 12, is formed at described first kind Semiconductor substrate 11 surface;
Silicon dioxide layer 5, is formed at described Second Type doped layer 12 surface;
Antireflective coating 2, is formed at described silicon dioxide layer 5 surface;
Top electrode 3, is formed at described antireflective coating 2 surface;
Bottom electrode 4, is formed at described first kind Semiconductor substrate 11 back side;
Wherein:
The second silicon nitride layer 22 that described antireflective coating 2 is formed by the first silicon nitride layer 21 adopting tubular film plating machine to be formed and employing flat plate film coating machine is formed by stacking.
Concrete, the thickness range of described silicon dioxide layer 5 is 1 ~ 5nm.The existence of described silicon dioxide layer 5 can help solar cell elimination PID corresponding, makes solar cell have anti-PID characteristic.The thickness of described silicon dioxide layer 5 is unsuitable blocked up, otherwise can reduce the anti-reflective effect of solar cell.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, and ranges of indices of refraction is 2.14 ~ 2.21; The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.
The manufacture method of the solar cell of the present embodiment is as follows, comprises the following steps:
Step S1: the silicon chip 1 that comprises first kind Semiconductor substrate 11 and Second Type doped layer 12 from bottom to top is successively provided, first a silicon dioxide layer 5 is formed at described silicon chip 1 upper surface, then at described first silicon nitride layer 21 of described silicon dioxide layer 5 upper surface deposition.
Concrete, the described first kind and Second Type refer to semiconductor doping type, if the first kind is P type, then Second Type is N-type; If the first kind is N-type, then Second Type is P type.In the present embodiment, described first kind Semiconductor substrate 11 is for P type polysilicon matrix, and described Second Type doped layer 12 obtains by carrying out N-type doping (as mixing phosphorus) on described first kind Semiconductor substrate 11 surface.In other embodiments, described first kind Semiconductor substrate also can adopt monocrystalline silicon.
Concrete, adopt thermal oxidation, plasma reinforced chemical vapour deposition, UV-irradiation or ozone oxidation method form described silicon dioxide layer 5 on described silicon chip 1 surface.Then tubular film plating machine is adopted to deposit the first silicon nitride layer 21 at described silicon chip 1 upper surface.
Described tubular film plating machine can adopt model conventional on the market, in the present embodiment, for the tubular film plating machine of Centrotherm company.The silicon chip 1 being coated with silicon dioxide layer 5 is put into graphite boat as electrode, and insert tubular film plating machine reaction cavity with graphite boat, pass into silane and ammonia as reaction source, and adopt radio-frequency power supply to excite ionization, obtain the first silicon nitride layer 21 in described silicon chip 1 upper surface deposition.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, ranges of indices of refraction is 2.14 ~ 2.21, the technological parameter such as ratio, flow, reaction temperature by adjustment ammonia and silane obtains corresponding refractive index and thickness, and this is the ordinary skill in the art, repeats no more herein.
In this step, deposit described first silicon nitride layer 21 by low frequency tubular type coating machine, stimulating frequency is no more than 13.56MHz, and in the present embodiment, stimulating frequency is for 40KHz.The the first silicon nitride layer quality obtained by low frequency tubular type coating machine is comparatively fine and close, good passivation effect, can the dangling bonds of effective passivation silicon chip surface.
Step S2: adopt flat plate film coating machine to deposit the second silicon nitride layer 22 at described first silicon nitride layer 21 upper surface.
In the present embodiment, described flat plate film coating machine is for the plate coating machine of Roth & Rau company, and frequency is 2450MHz.
Concrete, the silicon chip 1 being coated with silicon dioxide layer 5 and the first silicon nitride layer 21 is placed on the graphite frame of flat plate film coating machine, adopts the ionization of microwave glow discharge excitation, obtain the second silicon nitride layer 22 in described first silicon nitride layer 21 upper surface deposition.Described second silicon nitride layer 22 is formed by flat plate film coating machine, and color is more even.
The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.The technological parameter such as ratio, flow, reaction temperature equally by adjustment ammonia and silane obtains corresponding refractive index and thickness.
Described second silicon nitride layer 22 is common as antireflective coating 2 with described first silicon nitride layer 21, and combine the advantage of low frequency boiler tube and high frequency flat plate, the antireflective coating plated out both had had good passivation effect, and color is also very even.
Step S3: make top electrode 3 on described antireflective coating 2, makes bottom electrode 4 at described silicon chip 1 back side, obtains solar cell.
Concrete, described top electrode 3 and bottom electrode 4 obtain by silk screen printing, and in the present embodiment, described top electrode 3 is for silver, and described bottom electrode is for aluminium.
So far, make and obtain solar cell, in this solar cell, antireflective coating is superposed by the first silicon nitride layer and the second silicon nitride layer and forms, and wherein, described first silicon nitride layer is formed by tubular film plating machine, and rete is comparatively fine and close, good passivation effect; Described second silicon nitride layer is formed by flat plate film coating machine, and color is comparatively even, and antireflective coating entirety has good passivation effect, and color is also very even.Meanwhile, between the silicon chip of this solar cell and antireflective coating, also there is silicon dioxide layer, make solar cell have anti-PID characteristic, further increase the photoelectric conversion efficiency of solar cell.
Embodiment three
The present embodiment adopts substantially identical technical scheme with embodiment one, and difference is, the solar cell of the present embodiment has anti-PID characteristic.
Refer to Fig. 3, be shown as the film layer structure schematic diagram of the solar cell of the present embodiment, comprise:
First kind Semiconductor substrate 11;
Second Type doped layer 12, is formed at described first kind Semiconductor substrate 11 surface;
Antireflective coating 2, is formed at Second Type doped layer 12 surface;
Silicon oxynitride layer 6, is formed at described antireflective coating 2 surface
Top electrode 3, is formed at described silicon oxynitride layer 6 surface;
Bottom electrode 4, is formed at described first kind Semiconductor substrate 11 back side;
Wherein:
The second silicon nitride layer 22 that described antireflective coating 2 is formed by the first silicon nitride layer 21 adopting tubular film plating machine to be formed and employing flat plate film coating machine is formed by stacking.
Concrete, the thickness range of described silicon oxynitride layer 6 is 10 ~ 20nm, and refractive index is 1.4 ~ 2.0.It is corresponding that the existence of described silicon oxynitride layer 6 can help solar cell to eliminate PID, makes solar cell have anti-PID characteristic, and be conducive to sunlight and reflect into described antireflective coating 2, improves the light absorpting ability of solar cell.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, and ranges of indices of refraction is 2.14 ~ 2.21; The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.
The manufacture method of the solar cell of the present embodiment is as follows, comprises the following steps:
Step S1: provide the silicon chip 1 that comprises first kind Semiconductor substrate 11 and Second Type doped layer 12 from bottom to top successively, adopts tubular film plating machine to deposit the first silicon nitride layer 21 at described silicon chip 1 upper surface.
Concrete, the described first kind and Second Type refer to semiconductor doping type, if the first kind is P type, then Second Type is N-type; If the first kind is N-type, then Second Type is P type.In the present embodiment, described first kind Semiconductor substrate 11 is for P type polysilicon matrix, and described Second Type doped layer 12 obtains by carrying out N-type doping (as mixing phosphorus) on described first kind Semiconductor substrate 11 surface.In other embodiments, described first kind Semiconductor substrate also can adopt monocrystalline silicon.
Concrete, described tubular film plating machine can adopt model conventional on the market, in the present embodiment, for the tubular film plating machine of Centrotherm company.Described silicon chip 1 is put into graphite boat as electrode, and inserts tubular film plating machine reaction cavity with graphite boat, pass into silane and ammonia as reaction source, and adopt radio-frequency power supply to excite ionization, obtain the first silicon nitride layer 21 in described silicon chip 1 upper surface deposition.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, ranges of indices of refraction is 2.14 ~ 2.21, the technological parameter such as ratio, flow, reaction temperature by adjustment ammonia and silane obtains corresponding refractive index and thickness, and this is the ordinary skill in the art, repeats no more herein.
In this step, deposit described first silicon nitride layer 21 by low frequency tubular type coating machine, stimulating frequency is no more than 13.56MHz, and in the present embodiment, stimulating frequency is for 40KHz.The the first silicon nitride layer quality obtained by low frequency tubular type coating machine is comparatively fine and close, good passivation effect, can the dangling bonds of effective passivation silicon chip surface.
Step S2: adopt flat plate film coating machine to deposit the second silicon nitride layer 22 at described first silicon nitride layer 21 upper surface, and at described second silicon nitride layer 22 upper surface depositing silicon oxynitride silicon layer 6.
In the present embodiment, described flat plate film coating machine is for the plate coating machine of Roth & Rau company, and frequency is 2450MHz.
Concrete, the silicon chip 1 being coated with the first silicon nitride layer is placed on the graphite frame of flat plate film coating machine, adopts the ionization of microwave glow discharge excitation, obtain the second silicon nitride layer 22 in described first silicon nitride layer 21 upper surface deposition.Described second silicon nitride layer 22 is formed by flat plate film coating machine, and color is more even.
The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.The technological parameter such as ratio, flow, reaction temperature equally by adjustment ammonia and silane obtains corresponding refractive index and thickness.
Described second silicon nitride layer 22 is common as antireflective coating 2 with described first silicon nitride layer 21, and combine the advantage of low frequency boiler tube and high frequency flat plate, the antireflective coating plated out both had had good passivation effect, and color is also very even.
Concrete, described silicon oxynitride layer 6 and described second silicon nitride layer 22 are preferably in same reaction cavity obtained, namely adopt described flat plate film coating machine to prepare described silicon oxynitride layer 6, can Simplified flowsheet step.Its reacting gas is ammonia, silane and nitrous oxide.The silicon oxynitride layer of default refractive index and thickness is obtained by the technological parameter such as ratio, flow adjusting each reacting gas.
Step S3: make top electrode 3 on described silicon oxynitride layer 6, makes bottom electrode 4 at described silicon chip 1 back side, obtains solar cell.
Concrete, described top electrode 3 and bottom electrode 4 obtain by silk screen printing, and in the present embodiment, described top electrode 3 is for silver, and described bottom electrode is for aluminium.
So far, make and obtain solar cell, in this solar cell, antireflective coating is superposed by the first silicon nitride layer and the second silicon nitride layer and forms, and wherein, described first silicon nitride layer is formed by tubular film plating machine, and rete is comparatively fine and close, good passivation effect; Described second silicon nitride layer is formed by flat plate film coating machine, and color is comparatively even, and antireflective coating entirety has good passivation effect, and color is also very even.Meanwhile, between the antireflective coating of this solar cell and top electrode, also there is silicon oxynitride layer, make solar cell have anti-PID characteristic, further increase the photoelectric conversion efficiency of solar cell.
Embodiment four
The present embodiment adopts substantially identical technical scheme with embodiment two and embodiment three, and difference is, the anti-PID characteristic of the solar cell of the present embodiment is better.
Refer to Fig. 4, be shown as the film layer structure schematic diagram of the solar cell of the present embodiment, comprise:
First kind Semiconductor substrate 11;
Second Type doped layer 12, is formed at described first kind Semiconductor substrate 11 surface;
Silicon dioxide layer 5, is formed at described Second Type doped layer 12 surface;
Antireflective coating 2, is formed at described silicon dioxide layer 5 surface;
Silicon oxynitride layer 6, is formed at described antireflective coating 2 surface
Top electrode 3, is formed at described silicon oxynitride layer 6 surface;
Bottom electrode 4, is formed at described first kind Semiconductor substrate 11 back side;
Wherein:
The second silicon nitride layer 22 that described antireflective coating 2 is formed by the first silicon nitride layer 21 adopting tubular film plating machine to be formed and employing flat plate film coating machine is formed by stacking.
Concrete, the thickness range of described silicon dioxide layer 5 is 1 ~ 5nm.The existence of described silicon dioxide layer 5 can help solar cell elimination PID corresponding, makes solar cell have anti-PID characteristic.The thickness of described silicon dioxide layer 5 is unsuitable blocked up, otherwise can reduce the anti-reflective effect of solar cell.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, and ranges of indices of refraction is 2.14 ~ 2.21; The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.
The thickness range of described silicon oxynitride layer 6 is 10 ~ 20nm, and refractive index is 1.4 ~ 2.0.Described silicon oxynitride layer 6 has the effect of anti-PID, can promote the anti-PID characteristic of solar cell on the basis of described silicon dioxide layer 5 further, and is conducive to sunlight and reflects into described antireflective coating 2, improves the light absorpting ability of solar cell.
The manufacture method of the solar cell of the present embodiment is as follows, comprises the following steps:
Step S1: the silicon chip 1 that comprises first kind Semiconductor substrate 11 and Second Type doped layer 12 from bottom to top is successively provided, first a silicon dioxide layer 5 is formed at described silicon chip 1 upper surface, then at described first silicon nitride layer 21 of described silicon dioxide layer 5 upper surface deposition.
Concrete, the described first kind and Second Type refer to semiconductor doping type, if the first kind is P type, then Second Type is N-type; If the first kind is N-type, then Second Type is P type.In the present embodiment, described first kind Semiconductor substrate 11 is for P type polysilicon matrix, and described Second Type doped layer 12 obtains by carrying out N-type doping (as mixing phosphorus) on described first kind Semiconductor substrate 11 surface.In other embodiments, described first kind Semiconductor substrate also can adopt monocrystalline silicon.
Concrete, adopt thermal oxidation, plasma reinforced chemical vapour deposition, UV-irradiation or ozone oxidation method form described silicon dioxide layer 5 at described silicon chip 1 upper surface.Then tubular film plating machine is adopted to deposit the first silicon nitride layer 21 at described silicon dioxide layer 5 upper surface.
Described tubular film plating machine can adopt model conventional on the market, in the present embodiment, for the tubular film plating machine of Centrotherm company.The silicon chip 1 surface being formed with silicon dioxide layer 5 puts into graphite boat as electrode, and insert tubular film plating machine reaction cavity with graphite boat, pass into silane and ammonia as reaction source, and adopt radio-frequency power supply to excite ionization, obtain the first silicon nitride layer 21 in described silicon dioxide layer 5 upper surface deposition.
The thickness range of described first silicon nitride layer 21 is 30 ~ 40nm, ranges of indices of refraction is 2.14 ~ 2.21, the technological parameter such as ratio, flow, reaction temperature by adjustment ammonia and silane obtains corresponding refractive index and thickness, and this is the ordinary skill in the art, repeats no more herein.
In this step, deposit described first silicon nitride layer 21 by low frequency tubular type coating machine, stimulating frequency is no more than 13.56MHz, and in the present embodiment, stimulating frequency is for 40KHz.The the first silicon nitride layer quality obtained by low frequency tubular type coating machine is comparatively fine and close, good passivation effect, can the dangling bonds of effective passivation silicon chip surface.
Step S2: adopt flat plate film coating machine to deposit the second silicon nitride layer 22 at described first silicon nitride layer 21 upper surface, and at described second silicon nitride layer 22 upper surface depositing silicon oxynitride silicon layer 6.
In the present embodiment, described flat plate film coating machine is for the plate coating machine of Roth & Rau company, and frequency is 2450MHz.
Concrete, the silicon chip 1 being coated with the first silicon nitride layer is placed on the graphite frame of flat plate film coating machine, adopts the ionization of microwave glow discharge excitation, obtain the second silicon nitride layer 22 in described first silicon nitride layer 21 upper surface deposition.Described second silicon nitride layer 22 is formed by flat plate film coating machine, and color is more even.
The thickness range of described second silicon nitride layer 22 is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.The technological parameter such as ratio, flow, reaction temperature equally by adjustment ammonia and silane obtains corresponding refractive index and thickness.
Described second silicon nitride layer 22 is common as antireflective coating 2 with described first silicon nitride layer 21, and combine the advantage of low frequency boiler tube and high frequency flat plate, the antireflective coating plated out both had had good passivation effect, and color is also very even.
Concrete, described silicon oxynitride layer 6 and described second silicon nitride layer 22 are preferably in same reaction cavity obtained, namely adopt described flat plate film coating machine to prepare described silicon oxynitride layer 6.Its reacting gas is ammonia, silane and nitrous oxide.The silicon oxynitride layer of default refractive index and thickness is obtained by the technological parameter such as ratio, flow adjusting each reacting gas.
Concrete, the gross thickness of described silicon dioxide layer, antireflective coating and silicon oxynitride layer is 70 ~ 100nm, and total ranges of indices of refraction is 2.00 ~ 2.15.In the present embodiment, described gross thickness is preferably 83 ± 5nm, and total ranges of indices of refraction is preferably 2.05 ± 0.04.
Step S3: make top electrode 3 on described silicon oxynitride layer 6, makes bottom electrode 4 at described silicon chip 1 back side, obtains solar cell.
Concrete, described top electrode 3 and bottom electrode 4 obtain by silk screen printing, and in the present embodiment, described top electrode 3 is for silver, and described bottom electrode is for aluminium.
So far, make and obtain solar cell, in this solar cell, antireflective coating is superposed by the first silicon nitride layer and the second silicon nitride layer and forms, and wherein, described first silicon nitride layer is formed by tubular film plating machine, and rete is comparatively fine and close, good passivation effect; Described second silicon nitride layer is formed by flat plate film coating machine, and color is comparatively even, and antireflective coating entirety has good passivation effect, and color is also very even.Simultaneously, between the silicon chip of this solar cell and antireflective coating, there is silicon dioxide layer, between antireflective coating and top electrode, there is silicon oxynitride layer, wherein, silicon dioxide layer and silicon oxynitride layer all have anti-PID effect, the anti-PID characteristic of solar cell is promoted further, further increases the photoelectric conversion efficiency of solar cell.
In sum, in solar cell of the present invention, antireflective coating is superposed by the first silicon nitride layer and the second silicon nitride layer and forms, and wherein, described first silicon nitride layer is formed by tubular film plating machine, and rete is comparatively fine and close, good passivation effect; Described second silicon nitride layer is formed by flat plate film coating machine, and color is more even.Thus combining the advantage of low frequency boiler tube and high frequency flat plate, the antireflective coating plated out both had had good passivation effect, and color is also very even.Meanwhile, silicon dioxide layer can be set between silicon substrate and antireflective coating, or silicon oxynitride layer is set between antireflective coating and top electrode, make solar cell have anti-PID characteristic; Or both silicon dioxide layer is set between silicon substrate and antireflective coating, also silicon oxynitride layer is set between antireflective coating and top electrode, the anti-PID characteristic of solar cell is improved further.The present invention, by improving the composition structure of antireflective coating, improves the quality of antireflective coating, thus improves the photoelectric conversion efficiency of solar cell.So the present invention effectively overcomes various shortcoming of the prior art and tool high industrial utilization.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (10)
1. a manufacture method for solar cell, is characterized in that, comprises the following steps:
S1: provide the silicon chip that comprises first kind Semiconductor substrate and Second Type doped layer from bottom to top successively, adopts tubular film plating machine to deposit the first silicon nitride layer at described silicon chip upper surface;
S2: adopt flat plate film coating machine to deposit the second silicon nitride layer at described first silicon nitride layer upper surface; Described second silicon nitride layer and described first silicon nitride layer are jointly as antireflective coating;
S3: make top electrode on described antireflective coating, makes bottom electrode at the described silicon chip back side, obtains solar cell.
2. the manufacture method of solar cell according to claim 1, is characterized in that: in described step S1, first forms a silicon dioxide layer at described silicon chip upper surface, then at described first silicon nitride layer of described silicon dioxide layer upper surface deposition.
3. the manufacture method of solar cell according to claim 2, is characterized in that: adopt thermal oxidation, plasma reinforced chemical vapour deposition, UV-irradiation or ozone oxidation method form described silicon dioxide layer.
4. the manufacture method of solar cell according to claim 1 and 2, is characterized in that: in described step S2, is also included in the step of described second silicon nitride layer upper surface depositing silicon oxynitride silicon layer.
5. the manufacture method of solar cell according to claim 4, is characterized in that: adopt described flat plate film coating machine to form described silicon oxynitride layer.
6. the manufacture method of solar cell according to claim 1, is characterized in that: the refractive index of described second silicon nitride layer is less than the refractive index of described first silicon nitride layer.
7. a solar cell, comprising:
First kind Semiconductor substrate;
Second Type doped layer, is formed at described first kind semiconductor substrate surface;
Antireflective coating, is formed at described Second Type doped layer surface;
Top electrode, is formed at described antireflective coating surface;
Bottom electrode, is formed at the described first kind Semiconductor substrate back side;
It is characterized in that:
The second silicon nitride layer that described antireflective coating is formed by the first silicon nitride layer adopting tubular film plating machine to be formed and employing flat plate film coating machine superposes and forms.
8. solar cell according to claim 7, is characterized in that: be also formed with a silicon dioxide layer between described Second Type doped layer and described antireflective coating.
9. the solar cell according to claim 7 or 8, is characterized in that: be also formed with a silicon oxynitride layer between described antireflective coating and described top electrode.
10. solar cell according to claim 7, is characterized in that: the thickness range of described first silicon nitride layer is 30 ~ 40nm, and ranges of indices of refraction is 2.14 ~ 2.21; The thickness range of described second silicon nitride layer is 30 ~ 40nm, and ranges of indices of refraction is 2.06 ~ 2.09.
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