CN111628011A - Novel crystalline silicon double-sided battery back film structure and preparation method - Google Patents

Novel crystalline silicon double-sided battery back film structure and preparation method Download PDF

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Publication number
CN111628011A
CN111628011A CN202010520028.3A CN202010520028A CN111628011A CN 111628011 A CN111628011 A CN 111628011A CN 202010520028 A CN202010520028 A CN 202010520028A CN 111628011 A CN111628011 A CN 111628011A
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film
siox
refractive index
thickness
sixny
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杨飞飞
李雪方
张波
张云鹏
郭丽
吕爱武
杜泽霖
李陈阳
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Shanxi Luan Solar Energy Technology Co Ltd
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    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
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    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention relates to the field of crystalline silicon double-sided battery production. A novel crystal silicon double-sided battery back film structure is SixNy/SiOxNy/SiOx from bottom to top, a P-type silicon substrate is arranged on the SiOx film, wherein the refractive index of the SiOx film layer is 1.5-1.7, the film thickness is 5-10nm, the refractive index of the SiOxNy film layer is 1.7-2.0, the thickness is 10-20nm, the refractive index of the SixNy film layer is 2.1-2.3, and the thickness is 55-75 nm. The invention also relates to a preparation method of the novel crystalline silicon double-sided battery back film structure. After the novel crystalline silicon double-sided battery back film preparation process is realized, compared with a mainstream aluminum oxide manufacturing process, the cost is lower; on the other hand, silicon oxynitride has better LID resistance than aluminum oxide.

Description

Novel crystalline silicon double-sided battery back film structure and preparation method
Technical Field
The invention relates to the field of crystalline silicon double-sided battery production.
Background
Currently, in the preparation process of a single-crystal PERC double-sided battery, a back passivation technology is a key technical difficulty, and the selection of different passivation modes directly influences the manufacturing cost of the battery. Among them, alumina is a back passivation technology which is widely applied, mainly because of its simple preparation process and high conversion efficiency. Silicon oxynitride is another backside passivation technology, which has cell conversion efficiency comparable to alumina but is less expensive to manufacture. When the silicon oxynitride is applied to the double-sided battery, the utilization rate of photons on the back side needs to be considered, and the thickness of the back film is reduced to some extent, so that the passivation effect of the silicon oxynitride is poor.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to find out the technical direction of a crystalline silicon double-sided PERC battery suitable for silicon oxynitride by optimizing the silicon oxynitride back passivation process, thereby reducing the manufacturing cost of the PERC double-sided battery.
The technical scheme adopted by the invention is as follows: a novel crystal silicon double-sided battery back film structure is SixNy/SiOxNy/SiOx from bottom to top, a P-type silicon substrate is arranged on the SiOx film, wherein the refractive index of the SiOx film layer is 1.5-1.7, the film thickness is 5-10nm, the refractive index of the SiOxNy film layer is 1.7-2.0, the thickness is 10-20nm, the refractive index of the SixNy film layer is 2.1-2.3, and the thickness is 55-75 nm.
A method for preparing a novel crystalline silicon double-sided battery back film structure is carried out on the same equipment and comprises the following steps
Step one, realizing the SiOx and the hydrogen passivation film layer by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) mode, wherein an oxygen source is laughing gas (N2O), ammonia gas (NH 3) is introduced at the same time, and hydrogen passivation is carried out on the battery piece while the SiOx is prepared, wherein the refractive index of the prepared SiOx is 1.5-1.7, and the film thickness is 5-10 nm. Roughly passivating the back surface of the silicon substrate;
and step two, realizing the SiOxNy film layer of the silicon oxynitride by adopting a PECVD mode, wherein an oxygen source is N2O, and meanwhile, introducing silane SiH4 and NH3 to prepare the SiOxNy film layer with the refractive index of 1.7-2.0 and the thickness of 10-20 nm. The thickness of the film layer needs to be controlled properly, once the film layer is too thick, diffusion of SixNy hydrogen into a body is not facilitated, meanwhile, the refractive index needs to be lower, the optimal comprehensive conversion efficiency of the front side and the back side is ensured, and the film layer mainly achieves fine passivation on a silicon substrate;
and step three, passivating the interlayer by hydrogen, introducing N2 and NH3 in a PECVD mode, and maintaining for 5 min. Mainly realizing hydrogen passivation on a silicon substrate;
and step four, realizing the silicon nitride (SixNy) film layer, introducing SiH4 and NH3 in a PECVD mode, and obtaining the SixNy with the refractive index of 2.1-2.3 and the thickness of 55-75 nm.
The invention has the beneficial effects that: after the novel crystalline silicon double-sided battery back film preparation process is realized, compared with a mainstream aluminum oxide manufacturing process, the cost is lower; on the other hand, silicon oxynitride has better LID resistance than aluminum oxide.
Detailed Description
Example 1
A novel PERC double-sided battery back film structure is SixNy/SiOxNy/SiOx from bottom to top, wherein a P-type silicon body is arranged on an SiOx film layer, the refractive index of the SiOx film layer is 1.6, the film thickness is 8nm, the refractive index of the SiOxNy film layer is 1.8, the thickness is 15nm, the refractive index of the SixNy film layer is 2.2, the thickness is 63nm, and the total thickness of a lamination layer is 81 nm.
Example 2
The implementation process of the preparation method of the novel PERC double-sided battery back membrane structure is as follows:
the method comprises the following steps: SiOx is deposited at a pressure of 1000mTorr, a temperature of 450 ℃, a power of 10000W, a pulse switching ratio of 1:16, N2O/NH3=1/2 for 30 s.
Step two: SiOxNy is deposited at a pressure of 1500mTorr, at a temperature of 450 ℃, at a power of 10000W, at a pulse switching ratio of 1:16, through SiH4/NH3/N2O =1/0.5/5.2 for a period of 75 s.
Step three: the pressure is 2000mTorr, the temperature is 400 ℃, the power is 8000W, the pulse switching ratio is 1:16, the N2/NH 3= 1/1 is led, and the time is 300 s.
Step four: SixNy was deposited at 1000mTorr, temperature 450 deg.C, power 11000W, pulse on/off ratio of 1:12, and time 550s with SiH4/NH 3= 1/4.
Example 3
The implementation process of the preparation method of the novel PERC double-sided battery back membrane structure is as follows:
the method comprises the following steps: SiOx is deposited at a pressure of 2000mTorr, at a temperature of 500 ℃, at a power of 12000W, at a pulse on/off ratio of 1:16, with N2O/NH3= 1/4, for a period of 20 s.
Step two: SiOxNy is deposited at a pressure of 2000mTorr, at a temperature of 500 ℃, at a power of 12000W, at a pulse on/off ratio of 1:16, by passing SiH4/NH3/N2O =1/0.8/5.8 for a period of 50 s.
Step three: the pressure during hydrogen passivation is 2000mTorr, the temperature is 450 ℃, the power is 10000W, the pulse switching ratio is 1:16, the N2/NH 3= 1/5 is passed, and the time is 300 s.
Step four: SixNy was deposited at a pressure of 2000mTorr, a temperature of 500 deg.C, a power of 13000W, a pulse on/off ratio of 1:12, and a flow of SiH4/NH 3= 1/10 for 550 s.
Example 4
The implementation process of the preparation method of the novel PERC double-sided battery back membrane structure is as follows:
the method comprises the following steps: SiOx is deposited at a pressure of 1200mTorr, a temperature of 480 ℃, a power of 12000W, a pulse on/off ratio of 1:16, N2O/NH3=1/3 for 40 s.
Step two: SiOxNy is deposited at a pressure of 1800mTorr, at a temperature of 470 ℃, at a power of 11000W, at a pulse on/off ratio of 1:16, through SiH4/NH3/N2O =1/0.8/5.8, for a time of 85 s.
Step three: the hydrogen passivation pressure is 2500mTorr, the temperature is 450 ℃, the power is 9000W, the pulse switching ratio is 1:16, the N2/NH 3=1/3 is passed, and the time is 300 s.
Step four: SixNy was deposited at a pressure of 2000mTorr, a temperature of 450 deg.C, a power of 12000W, a pulse on/off ratio of 1:12, and a flow of SiH4/NH 3= 1/8 for 550 s.

Claims (2)

1. The utility model provides a novel two-sided battery notacoria structure of crystal silicon which characterized in that: SixNy/SiOxNy/SiOx is arranged from bottom to top, a P-type silicon substrate is arranged on the SiOx film, wherein the refractive index of the SiOx film is 1.5-1.7, the film thickness is 5-10nm, the refractive index of the SiOxNy film is 1.7-2.0, the thickness is 10-20nm, the refractive index of the SixNy film is 2.1-2.3, and the thickness is 55-75 nm.
2. A method for preparing the novel crystalline silicon double-sided battery back film structure of claim 1 is characterized in that: the preparation is carried out in the same equipment according to the following steps
Step one, realizing the SiOx and the hydrogen passivation film layer by adopting a Plasma Enhanced Chemical Vapor Deposition (PECVD) mode, wherein an oxygen source is laughing gas (N2O), introducing ammonia gas (NH 3), and performing hydrogen passivation on the battery piece while preparing the SiOx, wherein the refractive index of the prepared SiOx is 1.5-1.7, and the film thickness is 5-10 nm;
step two, the SiOxNy film layer of the silicon oxynitride is realized by adopting a PECVD mode, wherein an oxygen source is N2O, and silane SiH4 and NH3 are introduced simultaneously, so that the refractive index of the SiOxNy film layer prepared by the method is 1.7-2.0, and the thickness is 10-20 nm;
thirdly, passivating the interlayer by hydrogen, introducing N2 and NH3 in a PECVD mode, and maintaining for 5 min;
and step four, realizing the silicon nitride (SixNy) film layer, introducing SiH4 and NH3 in a PECVD mode, and obtaining the SixNy with the refractive index of 2.1-2.3 and the thickness of 55-75 nm.
CN202010520028.3A 2020-06-09 2020-06-09 Novel crystalline silicon double-sided battery back film structure and preparation method Pending CN111628011A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112382696A (en) * 2020-10-15 2021-02-19 山西潞安太阳能科技有限责任公司 Novel crystalline silicon SiON double-sided battery back passivation process

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Publication number Priority date Publication date Assignee Title
CN104091838A (en) * 2014-06-18 2014-10-08 镇江大全太阳能有限公司 High-conversion-efficiency PID-resisting crystalline silicon solar cell and manufacturing method thereof
CN104409565A (en) * 2014-10-31 2015-03-11 太极能源科技（昆山）有限公司 Solar cell and manufacturing method thereof
CN205050845U (en) * 2015-10-29 2016-02-24 西安黄河光伏科技股份有限公司 Solar cell of back of body surface passivation structure
CN109216473A (en) * 2018-07-20 2019-01-15 常州大学 A kind of the surface and interface passivation layer and its passivating method of efficient crystal silicon solar battery
CN110459615A (en) * 2019-08-19 2019-11-15 通威太阳能（成都）有限公司 A kind of composite dielectric passivation layer structure solar cell and its preparation process

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Publication number Priority date Publication date Assignee Title
CN104091838A (en) * 2014-06-18 2014-10-08 镇江大全太阳能有限公司 High-conversion-efficiency PID-resisting crystalline silicon solar cell and manufacturing method thereof
CN104409565A (en) * 2014-10-31 2015-03-11 太极能源科技（昆山）有限公司 Solar cell and manufacturing method thereof
CN205050845U (en) * 2015-10-29 2016-02-24 西安黄河光伏科技股份有限公司 Solar cell of back of body surface passivation structure
CN109216473A (en) * 2018-07-20 2019-01-15 常州大学 A kind of the surface and interface passivation layer and its passivating method of efficient crystal silicon solar battery
CN110459615A (en) * 2019-08-19 2019-11-15 通威太阳能（成都）有限公司 A kind of composite dielectric passivation layer structure solar cell and its preparation process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112382696A (en) * 2020-10-15 2021-02-19 山西潞安太阳能科技有限责任公司 Novel crystalline silicon SiON double-sided battery back passivation process

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Application publication date: 20200904