WO2011131000A1 - Method for achieving graded lamination passivation thin film on backplane of solar battery - Google Patents
Method for achieving graded lamination passivation thin film on backplane of solar battery Download PDFInfo
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- WO2011131000A1 WO2011131000A1 PCT/CN2010/078484 CN2010078484W WO2011131000A1 WO 2011131000 A1 WO2011131000 A1 WO 2011131000A1 CN 2010078484 W CN2010078484 W CN 2010078484W WO 2011131000 A1 WO2011131000 A1 WO 2011131000A1
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- silicon
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- 238000000034 method Methods 0.000 title claims abstract description 47
- 238000002161 passivation Methods 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title abstract 7
- 238000003475 lamination Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 12
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005137 deposition process Methods 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 19
- 230000000694 effects Effects 0.000 description 6
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910020295 SiOyNz Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to the field of solar cell production methods, and more particularly to a method for gradually laminating a passivation film on a back surface of a solar cell.
- Photovoltaic power generation is an important field in the utilization of solar energy. It is an urgent task to seek new technologies, new materials, new processes, improve battery conversion efficiency, and reduce costs.
- the conversion efficiency of solar cells is directly related to the generated photovoltaic electron-hole pairs. More electron hole pairs mean high conversion efficiency, but only when these few children are actually collected can they be converted into electricity.
- the various defects and interface states of the silicon wafer will greatly compound these minority carriers, reducing the ultimate effective conversion efficiency. By improving the drawing technology of crystalline silicon, defects and composite traps in the silicon wafer can be effectively reduced, such as
- CZ, FZ, etc. can improve the life of the minority wafers.
- various body passivation and surface passivation can be realized to improve the collection capacity of the minority.
- the passivation of the front surface is generally performed with H-rich silicon nitride. Passivation, can achieve a good front surface and good body passivation effect.
- the back surface passivation methods are as follows: 1. Aluminum back field passivation. At present, most crystalline silicon solar cells are practically screen printed aluminum back field methods, but their passivation effect is limited; 2. Thermal growth oxidation Silicon passivation, heat-growth silica passivation has good passivation effect, but it has a disadvantage. The cell is subjected to high-temperature thermal growth of silicon oxide.
- This high temperature is usually greater than 800 degrees. Such high temperature is on the front surface of SiNx. There are side effects, and it will reduce the life of polycrystals, and the process time is longer. 3. SiNx passivation, there is good passivation, but this inversion layer will introduce the field, which will form a bypass to greatly reduce the output current voltage. . SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is: In order to solve the above-mentioned shortcomings and deficiencies, a method for realizing a back-transformed laminated passivation film of a solar cell back surface is provided, and the film structure of the method is superior in structure and performance.
- the technical solution adopted by the present invention to solve the technical problem is: a method for realizing a back surface of a solar cell with a slowly-graded laminated passivation film, and depositing a film by a chemical vapor deposition process on the surface of the processed solar cell wafer back surface, the process
- the gas at the beginning of deposition is a mixed gas of SiH4 and N20, and lining is gradually added during the deposition process, so that the composition of the film changes from the outer layer of silicon on the surface of the silicon wafer to the outer layer of silicon and then to the outer layer.
- a diffusion-stacked passivation film is deposited on the surface of the silicon wafer after diffusion through the emitter junction and edge etching, and finally the subsequent solar cell process is performed.
- the chemical vapor deposition process is performed on the back surface of the silicon wafer at a temperature of 200 ° to 400 °, which does not require a high temperature process, requires less heat budget, and saves energy.
- the silicon wafer is P-type or N-type single crystal silicon, and the resistivity of the silicon wafer is 0.22 cm to 10 Q cm , and the silicon wafer is subjected to conventional surface cleaning and surface structuring treatment.
- the gas at the beginning of the chemical vapor deposition process is SiH 4 and N20 in a ratio of 1: 10 ⁇ 1 : 1 into the mixed gas, by gradually adding ⁇ 3 to the mixed gas in the process.
- the film is deposited so that the composition of the film gradually changes from SiO 2 to SiOy Nz and then gradually changes to SiNx.
- the thickness of the film is 50 ⁇ ! ⁇ 300 nm between.
- the thickness and ratio of the film described above can be achieved by adjusting the deposition time and the proportion of the mixed gas.
- the gas at the start of deposition may also be a mixed gas of a silicon germanium gas and an oxidizing gas, and a nitrogen-containing gas containing no oxygen is gradually added during the deposition to change the composition of the film.
- the invention has the beneficial effects that the method for realizing the back surface of the solar cell to gradually laminate the passivation film has the advantages of high deposition speed and high yield, and can realize deposition of a plurality of films at one time, and the deposited film has high density.
- the high temperature process is not required in the process, the required thermal budget is small, and the high temperature effect of thermal oxidation is avoided, and the refractive index change of the slowly changing film has superior internal reflectance for long waves passing through the silicon wafer.
- the laminated retardation film can effectively reduce the interface state brought by different film combinations, can more effectively reduce the compliance rate, and has superior back passivation effect. And the thermal stability is improved and the film stress is reduced compared to pure silicon nitride.
- Figure 1 is a schematic view showing the structure of a film of the present invention.
- a method for realizing a back-transformed laminated passivation film of a solar cell wherein a processed film is deposited by a chemical vapor deposition process on a surface of the processed solar cell wafer, and the gas at the start of deposition is a mixed gas of SiH4 and N20.
- the NH3 is gradually added during the deposition process so that the composition of the film changes from the outer layer of silicon dioxide on the surface of the silicon wafer to the outer layer of silicon to silicon nitride.
- the chemical vapor deposition process is performed on the back side of the silicon wafer at a temperature of 200 ° to 400 °.
- the silicon wafer is P-type or N-type single crystal silicon, and the resistivity of the silicon wafer is 0. 2 0 ( ⁇ 10 0 (111. Chemical vapor deposition)
- the gas is SiH4 and N20 in a ratio of 1:10 ⁇ 1:1 into the mixed gas, and the process is gradually added to the mixed gas by adding 3 to the mixed gas.
- the thickness of the film is between 50 nm and 300 nm.
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A method for achieving a graded lamination passivation thin film on the backplane of a solar battery is provided. The method comprises depositing a thin film onto the backplane of the treated solar battery by chemical vapor deposition process, firstly using a mixture gas of a SiH4 gas and a N2O gas, and then, adding a NH3 gas gradually during the deposition process; thus the thin film is acquired which comprises a SiO2 layer, a silicon oxynitride layer, and a silicon nitride layer successively from the surface of silicon wafer towards the outside. And the thickness of the thin film is between 50nm and 300nm. The deposition of the high density thin film is achieved and the interface state due to the combination of different thin films is reduced efficiency by using the method. Furthermore, the thermal stability is improved and the film stress is reduced.
Description
实现太阳能电池背表面缓变叠层钝化薄膜的方法 Method for realizing solar cell back surface slowly changing laminated passivation film
技术领域 本发明涉及太阳能电池生产方法领域， 尤其是实现太阳能电池背表面缓变 叠层钝化薄膜的方法。 BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of solar cell production methods, and more particularly to a method for gradually laminating a passivation film on a back surface of a solar cell.
背景技术 光伏发电是太阳能利用中很重要的一个领域， 寻求新技术、 新材料、 新工 艺， 提高电池转换效率， 降低成本是当前很迫切的一个任务。 BACKGROUND OF THE INVENTION Photovoltaic power generation is an important field in the utilization of solar energy. It is an urgent task to seek new technologies, new materials, new processes, improve battery conversion efficiency, and reduce costs.
太阳能电池的转换效率与产生的光伏电子空穴对直接相关， 更多的电子空 穴对意味着高的转换效率， 但是只有这些少子真正被收集的时候才能转化为电 能。 硅片的各种缺陷和界面态都会很大的复合这些少子， 降低最终的有效转换 效率。 通过提高晶硅的拉制技术可以有效的降低硅片中的缺陷及复合陷阱， 如 The conversion efficiency of solar cells is directly related to the generated photovoltaic electron-hole pairs. More electron hole pairs mean high conversion efficiency, but only when these few children are actually collected can they be converted into electricity. The various defects and interface states of the silicon wafer will greatly compound these minority carriers, reducing the ultimate effective conversion efficiency. By improving the drawing technology of crystalline silicon, defects and composite traps in the silicon wafer can be effectively reduced, such as
CZ、 FZ等都可以提高硅片少子的寿命， 通过有效的钝化方法来实现各种体钝化 和表面钝化， 提高少子的收集能力， 前表面的钝化普遍采用富 H的氮化硅钝化， 能实现很好的前表面和很好的体钝化效果。 目前已有的背表面钝化方法为： 1、 铝背场钝化， 目前绝大多数的晶体硅太阳能电池实用丝网印刷铝背场的方法， 但其钝化效果有限； 2、热生长氧化硅钝化， 热生长二氧化硅钝化的钝化效果好， 但是其有个缺点， 电池片要经历高温热生长氧化硅的过程， 这个高温通常大于 800度， 这样的高温对前表面的 SiNx有副作用， 而且会降低多晶体的寿命， 工 艺时间也较长； 3、 SiNx钝化， 有很好的钝化， 但是这个反型层会引入场， 会形 成一个旁路使输出电流电压大大下降。
发明内容 本发明要解决的技术问题是： 为了解决上述存在的缺点与不足， 提供一种 实现太阳能电池背表面缓变叠层钝化薄膜的方法， 该方法的薄膜结构简单性能 优越。 CZ, FZ, etc. can improve the life of the minority wafers. Through effective passivation methods, various body passivation and surface passivation can be realized to improve the collection capacity of the minority. The passivation of the front surface is generally performed with H-rich silicon nitride. Passivation, can achieve a good front surface and good body passivation effect. At present, the back surface passivation methods are as follows: 1. Aluminum back field passivation. At present, most crystalline silicon solar cells are practically screen printed aluminum back field methods, but their passivation effect is limited; 2. Thermal growth oxidation Silicon passivation, heat-growth silica passivation has good passivation effect, but it has a disadvantage. The cell is subjected to high-temperature thermal growth of silicon oxide. This high temperature is usually greater than 800 degrees. Such high temperature is on the front surface of SiNx. There are side effects, and it will reduce the life of polycrystals, and the process time is longer. 3. SiNx passivation, there is good passivation, but this inversion layer will introduce the field, which will form a bypass to greatly reduce the output current voltage. . SUMMARY OF THE INVENTION The technical problem to be solved by the present invention is: In order to solve the above-mentioned shortcomings and deficiencies, a method for realizing a back-transformed laminated passivation film of a solar cell back surface is provided, and the film structure of the method is superior in structure and performance.
本发明解决其技术问题所采用的技术方案是： 实现太阳能电池背表面缓变 叠层钝化薄膜的方法， 在经处理后的太阳能电池硅片背光表面通过化学气相沉 积工艺法进行沉积薄膜， 工艺开始沉积时的气体为 SiH4和 N20的混合气体， 在 沉积过程中逐渐加入丽 3，使得薄膜的组分由硅片表面的二氧化硅向外层变为硅 的氮氧化物再向外层变为氮化硅， 在经过制绒的硅片上， 先经过发射结扩散以 及边缘刻蚀后， 在硅片表面沉积缓变叠层钝化薄膜， 最后进行后续太阳能电池 工艺。 The technical solution adopted by the present invention to solve the technical problem is: a method for realizing a back surface of a solar cell with a slowly-graded laminated passivation film, and depositing a film by a chemical vapor deposition process on the surface of the processed solar cell wafer back surface, the process The gas at the beginning of deposition is a mixed gas of SiH4 and N20, and lining is gradually added during the deposition process, so that the composition of the film changes from the outer layer of silicon on the surface of the silicon wafer to the outer layer of silicon and then to the outer layer. For silicon nitride, on the textured silicon wafer, a diffusion-stacked passivation film is deposited on the surface of the silicon wafer after diffusion through the emitter junction and edge etching, and finally the subsequent solar cell process is performed.
进一步， 所述的化学气相沉积工艺法是在温度为 200 ° 〜400 ° 的条件下在 硅片背光面进行沉积， 不需要高温的过程， 所需的热预算少， 节约能源。 Further, the chemical vapor deposition process is performed on the back surface of the silicon wafer at a temperature of 200 ° to 400 °, which does not require a high temperature process, requires less heat budget, and saves energy.
所述的硅片为 P型或 N型单晶硅， 硅片的电阻率为 0. 2 Q cm〜10 Q cm， 硅片 先经过常规的表面清洗及表面结构化处理。 The silicon wafer is P-type or N-type single crystal silicon, and the resistivity of the silicon wafer is 0.22 cm to 10 Q cm , and the silicon wafer is subjected to conventional surface cleaning and surface structuring treatment.
为了达到所需最佳的折射率， 化学气相沉积工艺法开始时的气体为 SiH4和 N20按比例 1 : 10〜1 : 1进混合的气体， 工艺中通过逐渐添加丽 3到混合的气体 中， 通过此来进行沉积薄膜， 使得薄膜的成分由 Si02逐渐缓变到 SiOyNz, 再缓 变到 SiNx。 In order to achieve the desired optimum refractive index, the gas at the beginning of the chemical vapor deposition process is SiH 4 and N20 in a ratio of 1: 10~1 : 1 into the mixed gas, by gradually adding 丽 3 to the mixed gas in the process. By this, the film is deposited so that the composition of the film gradually changes from SiO 2 to SiOy Nz and then gradually changes to SiNx.
为了使得沉积的速度快， 效果好， 薄膜的厚度在 50ηπ！〜 300 nm之间。 上述所述的薄膜的厚度及比例可通过调节沉积时间及混合气体比例来实 现。
在上述化学气相沉积工艺中， 开始沉积时的气体还可以为硅垸气体和氧化 气体的混合气体， 在沉积过程中逐渐加入不含氧的含氮气体， 使得薄膜的组分 层变。 In order to make the deposition speed fast, the effect is good, the thickness of the film is 50ηπ! ~ 300 nm between. The thickness and ratio of the film described above can be achieved by adjusting the deposition time and the proportion of the mixed gas. In the above chemical vapor deposition process, the gas at the start of deposition may also be a mixed gas of a silicon germanium gas and an oxidizing gas, and a nitrogen-containing gas containing no oxygen is gradually added during the deposition to change the composition of the film.
本发明的有益效果是， 本发明的实现太阳能电池背表面缓变叠层钝化薄膜 的方法， 沉积速度快， 产量高， 能一次实现多种薄膜的沉积， 沉积出来的薄膜 致密度高。 工艺中不需要高温过程， 所需的热预算少， 避免了热氧化的高温影 响， 缓变薄膜的折射率变化对于穿过硅片的长波具有优越的内反射率。 这种叠 层缓变薄膜能有效地降低由不同薄膜组合带来的界面态， 能更加有效的降低符 合率， 具有更加优越的背面钝化作用。 且比起单纯的氮化硅改善了热稳定性， 降低了膜应力。 The invention has the beneficial effects that the method for realizing the back surface of the solar cell to gradually laminate the passivation film has the advantages of high deposition speed and high yield, and can realize deposition of a plurality of films at one time, and the deposited film has high density. The high temperature process is not required in the process, the required thermal budget is small, and the high temperature effect of thermal oxidation is avoided, and the refractive index change of the slowly changing film has superior internal reflectance for long waves passing through the silicon wafer. The laminated retardation film can effectively reduce the interface state brought by different film combinations, can more effectively reduce the compliance rate, and has superior back passivation effect. And the thermal stability is improved and the film stress is reduced compared to pure silicon nitride.
附图说明 图 1是本发明的薄膜结构示意图。 BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic view showing the structure of a film of the present invention.
具体实施方式 现在对本发明作进一步详细的说明。 BEST MODE FOR CARRYING OUT THE INVENTION The present invention will now be described in further detail.
实现太阳能电池背表面缓变叠层钝化薄膜的方法， 在经处理后的太阳能电 池硅片背光表面通过化学气相沉积工艺法进行沉积薄膜， 工艺开始沉积时的气 体为 SiH4和 N20的混合气体，在沉积过程中逐渐加入 NH3 , 使得薄膜的组分由硅 片表面的二氧化硅向外层变为硅的氮氧化物再向外层变为氮化硅。 A method for realizing a back-transformed laminated passivation film of a solar cell, wherein a processed film is deposited by a chemical vapor deposition process on a surface of the processed solar cell wafer, and the gas at the start of deposition is a mixed gas of SiH4 and N20. The NH3 is gradually added during the deposition process so that the composition of the film changes from the outer layer of silicon dioxide on the surface of the silicon wafer to the outer layer of silicon to silicon nitride.
化学气相沉积工艺法是在温度为 200° 〜400° 的条件下在硅片背面进行沉 积。硅片为 P型或 N型单晶硅， 硅片的电阻率为0. 2 0 (^〜10 0 ( 111。 化学气相沉
积工艺法开始时的气体为 SiH4和 N20按比例 1 : 10〜1 : 1进混合的气体， 工艺中 通过逐渐添加丽 3到混合的气体中。 薄膜的厚度在 50nm〜300 nm之间。 The chemical vapor deposition process is performed on the back side of the silicon wafer at a temperature of 200 ° to 400 °. The silicon wafer is P-type or N-type single crystal silicon, and the resistivity of the silicon wafer is 0. 2 0 (^~10 0 (111. Chemical vapor deposition) At the beginning of the process, the gas is SiH4 and N20 in a ratio of 1:10~1:1 into the mixed gas, and the process is gradually added to the mixed gas by adding 3 to the mixed gas. The thickness of the film is between 50 nm and 300 nm.
本发明实施时， 选择 P型单晶硅片， 晶面（100)， 电阻率为 0. 5 Q cm， 对硅 片进行切片后经过常规清洗工艺， 然后表面制绒， 接着进行扩散， 去 PSG, 边缘 刻蚀。然后在低温 350 °C的化学气相沉积工艺法中的 PEVCD工艺中， 工艺频率选 择 13. 56MHZ , 初始的工艺气体为 SiH4和 N20按 1 : 5进行混合， 随着 PEVCD工 艺的进行， 在混合气体中逐渐添加 丽 3来沉积薄膜， 沉积过程中薄膜的成分由 Si02向外层变到 SiOyNz, 再向外层变到 SiNx, 如图 1所示的薄膜结构， 总的薄 膜厚度控制为 lOOnm, 总工艺时间控制为 1分钟， 使得薄膜的折射率由内到外相 应的由 1. 5缓变到 2. 8。 然后进行正背面电极等后续太阳能电池的工艺。 The practice of the present invention, to select a P-type monocrystalline silicon wafer, crystal face (100), resistivity of 0. 5 Q cm, after cleaning the silicon wafer by slicing through the conventional process, and then texturing the surface, followed by diffusion, to PSG , edge etching. Then, in the PEVCD process in the chemical vapor deposition process at a low temperature of 350 ° C, the process frequency is selected to be 13.56 MHz, and the initial process gas is SiH4 and N20 mixed at 1:5, as the PEVCD process proceeds, in the mixed gas Li 3 is gradually added to deposit the film. During the deposition process, the composition of the film changes from SiO 2 to SiOyNz and then to SiNx. As shown in Figure 1, the total film thickness is controlled to 100 nm. The grading of the film is gradually changed from 1.5 to 2. 8 from the inside to the outside. Then, a process of a subsequent solar cell such as a front surface electrode is performed.
以上述依据本发明的理想实施例为启示， 通过上述的说明内容， 相关工作 人员完全可以在不偏离本项发明技术思想的范围内， 进行多样的变更以及修改。 本项发明的技术性范围并不局限于说明书上的内容， 必须要根据权利要求范围 来确定其技术性范围。
In view of the above-described embodiments of the present invention, various changes and modifications may be made by those skilled in the art without departing from the scope of the invention. The technical scope of the present invention is not limited to the contents of the specification, and the technical scope thereof must be determined in accordance with the scope of the claims.
Claims
1、 一种实现太阳能电池背表面缓变叠层钝化薄膜的方法， 其特征在于： 在 经处理后的太阳能电池硅片背光表面通过化学气相沉积工艺法进行沉积薄膜， 开始沉积时的气体为 SiH4和 N20的混合气体，在沉积过程中逐渐加入丽 3，使得 薄膜的组分由硅片表面的二氧化硅向外层变为硅的氮氧化物再向外层变为氮化 硅。 A method for realizing a back-transformed laminated passivation film of a solar cell, characterized in that: the surface of the processed solar cell wafer back surface is deposited by a chemical vapor deposition process, and the gas at the start of deposition is The mixed gas of SiH4 and N20 gradually adds MN3 during the deposition process, so that the composition of the film changes from the silicon dioxide on the surface of the silicon wafer to the oxynitride of silicon to the outer layer to silicon nitride.
2、根据权利要求 1所述的实现太阳能电池背表面缓变叠层钝化薄膜的方法， 其特征在于： 所述的化学气相沉积工艺法是在温度为 200 ° 〜400 ° 的条件下在 硅片背光面进行沉积。 2 . The method of claim 1 , wherein the chemical vapor deposition process is performed at a temperature of 200° to 400° in silicon. The back side of the sheet is deposited.
3、根据权利要求 1所述的实现太阳能电池背表面缓变叠层钝化薄膜的方法， 其特征在于： 所述的硅片为 P 型或 N 型单晶硅， 硅片的电阻率为 0. 2 Q cm〜 10 Ω〇πι。 The method for realizing a solar cell back surface grading laminated passivation film according to claim 1, wherein: the silicon wafer is P-type or N-type single crystal silicon, and the resistivity of the silicon wafer is 0. . 2 Q cm ~ 10 Ω〇πι.
4、 根据权利要求 1或 3所述的实现太阳能电池背表面缓变叠层钝化薄膜的 方法， 其特征在于： 所述的化学气相沉积工艺法开始时的气体为 SiH4和 N20按 比例 1 : 10〜1 : 1进混合的气体， 工艺中逐渐加入丽 3到混合的气体中。 The method for realizing a solar cell back surface grading laminated passivation film according to claim 1 or 3, wherein: the gas at the beginning of the chemical vapor deposition process is SiH4 and N20 in a ratio of 1: 10~1 : 1 into the mixed gas, the process gradually added 丽 3 to the mixed gas.
5、根据权利要求 1所述的实现太阳能电池背表面缓变叠层钝化薄膜的方法， 其特征在于： 所述的薄膜的厚度在 50ηπ！〜 300 nm之间。 5 . The method of claim 1 , wherein the thickness of the film is 50 ηπ! ~ 300 nm between.
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| CN106169510B (en) * | 2016-09-29 | 2017-09-01 | 无锡尚德太阳能电力有限公司 | Solar battery back passivation film structure and preparation method |
| CN111509081B (en) * | 2020-03-20 | 2023-10-20 | 中国科学院宁波材料技术与工程研究所 | Preparation method of ultrathin oxygen-containing nitrogen-silicon film and application of ultrathin oxygen-containing nitrogen-silicon film in passivation contact battery |
| CN111668317B (en) | 2020-05-29 | 2021-09-24 | 晶科绿能(上海)管理有限公司 | Photovoltaic module, solar cell and preparation method thereof |
| CN111668318B (en) | 2020-05-29 | 2021-09-24 | 晶科绿能(上海)管理有限公司 | Photovoltaic module, solar cell and preparation method thereof |
| CN112713204A (en) * | 2021-01-19 | 2021-04-27 | 天合光能股份有限公司 | Solar cell laminated passivation structure |
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