CN103311372A - Crystalline silicon oxidation treatment apparatus for passivation of solar cells - Google Patents
Crystalline silicon oxidation treatment apparatus for passivation of solar cells Download PDFInfo
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- CN103311372A CN103311372A CN2013102398502A CN201310239850A CN103311372A CN 103311372 A CN103311372 A CN 103311372A CN 2013102398502 A CN2013102398502 A CN 2013102398502A CN 201310239850 A CN201310239850 A CN 201310239850A CN 103311372 A CN103311372 A CN 103311372A
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Abstract
The invention discloses a crystalline silicon oxidation treatment apparatus for passivation of solar cells. The crystalline silicon oxidation treatment apparatus comprises an oxidation chamber provided with a gas intake device and an illumination device. The illumination device can emit light with a wavelength within the range of 100-5000 nm. By the crystalline silicon oxidation treatment apparatus, a silicon oxide layer is generated on surfaces of crystalline silicon at a low temperature, and accordingly passivation of surfaces of the crystalline silicon solar cells is enhanced. The crystalline silicon oxidation treatment apparatus is low-cost, simple in structure and high in stability, and is compatible with existing semiconductor technology and solar cell technology.
Description
Technical field
The present invention relates to the crystalline silicon oxidation treatment device for the solar battery sheet passivation.
Background technology
In the industries such as semiconductor, solar energy, because the requirement of technique, often need to be at silicon chip surface one deck thin silicon oxide layer of growing.For example, in the manufacture craft of solar cell, good surface passivation is the key point that solar cell obtains high conversion efficiency, the conventional crystal silicon solar cell mainly is to carry out passivation with the plasma-reinforced chemical gas phase at silicon chip surface cvd nitride silicon thin film at present, but the lattice constant of the lattice constant of silicon nitride and silicon has larger difference, cause producing larger distortion of lattice at silicon nitride/silicon interface place, thereby affect passivation effect.And the distortion of lattice of silica/silicon interface is very little, and simultaneous oxidation silicon can well carry out passivation to silicon face, thereby growth one deck silicon oxide film can effectively solve the distortion of lattice problem between silicon and silicon nitride film, thereby promotes passivation effect.
At present, equipment at crystal silicon chip superficial growth silicon oxide film mainly contains high-temperature oxydation equipment and wet-chemical oxidation furnaces, but the former needs extra pyroprocess, expend a large amount of energy, the wafer bulk life-span is reduced, and the latter can increase the complexity of technique, and the simultaneous oxidation silicon thin film is fine and close not, all can not satisfy the requirement of technique.
Summary of the invention
The object of the present invention is to provide a kind of crystalline silicon oxidation treatment device for the solar battery sheet passivation, it can generate silicon oxide layer at surface of crystalline silicon under cryogenic conditions, strengthen the crystal silicon solar energy battery surface passivation.
For achieving the above object, technical scheme of the present invention is a kind of crystalline silicon oxidation treatment device for the solar battery sheet passivation of design, comprise oxidation chamber, this oxidation chamber is provided with inlet duct and illumination apparatus, and this illumination apparatus can send the light in the 100-5000nm wave-length coverage.
Inlet duct is used for to oxidation chamber input oxidizing gas, such as in oxygen, ozone, air, steam and the laughing gas one or more; The crystalline silicon that illumination apparatus is opposite in the oxidizing gas carries out illumination, makes surface of crystalline silicon generate silicon oxide layer; Particularly adopt the interior light time of 100-5000nm wave-length coverage when illumination, can under cryogenic conditions, generate silicon oxide layer at surface of crystalline silicon, can be 0-450 ℃ such as oxidation temperature.
Preferably, above-mentioned illumination apparatus further comprises light source, intensity of illumination control module, light application time control module and illumination wavelength control module.
Preferably, above-mentioned light source is infrared light light source and/or visible light source.
Preferably, above-mentioned light source is the continuous wavelength light source, can send the light of wavelength continuous distribution.
Preferably, also be provided with heater in the above-mentioned oxidation chamber, can heat oxidation chamber, the temperature in the control oxidation chamber.
Preferably, above-mentioned oxidation chamber also is provided with air-out apparatus.
Preferably, this equipment also comprises feeding platform, heating cabinet, cooling storehouse and blanking bench, is used for cooperating oxidation chamber to finish streamline production.
Preferably, above-mentioned heater is resistance heater and/or illumination heater.
Preferably, above-mentioned resistance heater is connected with power control module, and above-mentioned illumination heater is connected with the irradiation intensity control module.
Preferably, but above-mentioned oxidation chamber and/or heating cabinet are provided with the temperature measuring equipment of Real Time Monitoring silicon temperature.
Advantage of the present invention and beneficial effect are: a kind of crystalline silicon oxidation treatment device for the solar battery sheet passivation is provided, and it can generate silicon oxide layer at surface of crystalline silicon under cryogenic conditions, strengthen the crystal silicon solar energy battery surface passivation.This equipment cost is cheap, and is simple in structure, good stability, and compatible with existing semiconductor technology and solar battery process.
Description of drawings
Fig. 1 is schematic diagram of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is further described.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
Equipment of the present invention can be used for the manufacture craft of solar cell, before crystal silicon chip is carried out the silicon nitride plated film, this equipment of utilization forms one deck thin silicon oxide at silicon chip surface, and then carry out conventional silicon nitride plated film, thereby can strengthen the passivation effect of silicon chip surface, improve the photoelectric conversion efficiency of solar cell.
Core of the present invention is to be provided with the oxidation chamber of inlet duct and illumination apparatus, and this illumination apparatus can send the light in the 100-5000nm wave-length coverage.
Inlet duct is used for to oxidation chamber input oxidizing gas, such as in oxygen, ozone, air, steam and the laughing gas one or more; The crystalline silicon that illumination apparatus is opposite in the oxidizing gas carries out illumination, makes surface of crystalline silicon generate silicon oxide layer; Particularly adopt the interior light time of 100-5000nm wave-length coverage when illumination, can under cryogenic conditions, generate silicon oxide layer at surface of crystalline silicon, can be 0-450 ℃ such as oxidation temperature.
Specific embodiments of the invention are as follows:
As shown in Figure 1, a kind of crystalline silicon oxidation treatment device for the solar battery sheet passivation comprises the feeding platform 1, heating cabinet 2, oxidation chamber 3, cooling storehouse 4 and the blanking bench 5 that set gradually, and silicon chip transmits by roller 10.
Be provided with in the above-mentioned heating cabinet 2 and silicon chip between the adjustable heater 6 of distance, heater 6 can adopt infrared lamp heating; But heating cabinet 2 also is provided with the temperature measuring equipment of air-out apparatus and Real Time Monitoring silicon temperature.
Above-mentioned oxidation chamber 3 is provided with the inlet duct 7 with gas flowmeter and flow homogenizer, and and silicon chip between the adjustable illumination apparatus 8 of distance, this illumination apparatus 8 can send the light in the 100-5000nm wave-length coverage.Above-mentioned illumination apparatus 8 further comprises light source, intensity of illumination control module, light application time control module and illumination wavelength control module.Above-mentioned light source can adopt one or more in ultraviolet light source, infrared light light source and the visible light source.Above-mentioned light source can adopt the continuous wavelength light source, is used for sending the light of wavelength continuous distribution.
Also be provided with the heater of adjustable position in the above-mentioned oxidation chamber 3, heater can heat oxidation chamber, and the temperature in the control oxidation chamber is as being controlled at 0-450 ℃ to oxidation chamber 3 interior temperature.Above-mentioned heater is resistance heater and/or illumination heater, and described resistance heater is connected with power control module, and described illumination heater is connected with the irradiation intensity control module.
But above-mentioned oxidation chamber 3 also is provided with the temperature measuring equipment of air-out apparatus and Real Time Monitoring silicon temperature.
Above-mentioned cooling storehouse 4 is provided with the inlet duct 9 with gas flowmeter and flow homogenizer, is used for desired gas is imported cooling storehouse 4 and is full of the whole cavity that cools off storehouse 4, cools off thus silicon chip.
Above above-mentioned only be preferred implementation of the present invention; should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the technology of the present invention principle; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. be used for the crystalline silicon oxidation treatment device of solar battery sheet passivation, it is characterized in that, comprise oxidation chamber, this oxidation chamber is provided with inlet duct and illumination apparatus, and this illumination apparatus can send the light in the 100-5000nm wave-length coverage.
2. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 1 is characterized in that, above-mentioned illumination apparatus further comprises light source, intensity of illumination control module, light application time control module and illumination wavelength control module.
3. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 2 is characterized in that, above-mentioned light source is infrared light light source and/or visible light source.
4. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 3 is characterized in that, above-mentioned light source is the continuous wavelength light source.
5. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 4 is characterized in that, also is provided with heater in the above-mentioned oxidation chamber.
6. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 5 is characterized in that, above-mentioned oxidation chamber also is provided with air-out apparatus.
7. each described crystalline silicon oxidation treatment device for the solar battery sheet passivation is characterized in that according to claim 1-6, also comprises feeding platform, heating cabinet, cooling storehouse and blanking bench.
8. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 7 is characterized in that, above-mentioned heater is resistance heater and/or illumination heater.
9. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 8 is characterized in that, above-mentioned resistance heater is connected with power control module, and above-mentioned illumination heater is connected with the irradiation intensity control module.
10. the crystalline silicon oxidation treatment device for the solar battery sheet passivation according to claim 9 it is characterized in that, but above-mentioned oxidation chamber and/or heating cabinet is provided with the temperature measuring equipment of Real Time Monitoring silicon temperature.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014201975A1 (en) * | 2013-06-18 | 2014-12-24 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar cell sheet passivation |
| CN105322046A (en) * | 2014-06-13 | 2016-02-10 | 南京华伯仪器科技有限公司 | Equipment and method for passivating silicon crystal |
| CN106981441A (en) * | 2016-01-18 | 2017-07-25 | 茂迪股份有限公司 | Processing apparatus |
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
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| CN102496658A (en) * | 2011-12-27 | 2012-06-13 | 天威新能源控股有限公司 | Preparation method for antireflective film of solar cell |
| CN102817013A (en) * | 2012-08-28 | 2012-12-12 | 夏洋 | Photochemical deposition device for solar cells |
| CN103050569A (en) * | 2011-10-17 | 2013-04-17 | 欧司朗股份有限公司 | Method for producing a photovoltaic element comprising a silicon dioxide layer |
| CN203325957U (en) * | 2013-06-18 | 2013-12-04 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar energy cell sheet passivation |
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- 2013-06-18 CN CN2013102398502A patent/CN103311372A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101964378A (en) * | 2010-04-20 | 2011-02-02 | 常州天合光能有限公司 | Method for realizing graded laminated passivation film on back surface of solar cell |
| CN103050569A (en) * | 2011-10-17 | 2013-04-17 | 欧司朗股份有限公司 | Method for producing a photovoltaic element comprising a silicon dioxide layer |
| CN102496658A (en) * | 2011-12-27 | 2012-06-13 | 天威新能源控股有限公司 | Preparation method for antireflective film of solar cell |
| CN102817013A (en) * | 2012-08-28 | 2012-12-12 | 夏洋 | Photochemical deposition device for solar cells |
| CN203325957U (en) * | 2013-06-18 | 2013-12-04 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar energy cell sheet passivation |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014201975A1 (en) * | 2013-06-18 | 2014-12-24 | 常州时创能源科技有限公司 | Crystalline silicon oxidation processing device for solar cell sheet passivation |
| CN105322046A (en) * | 2014-06-13 | 2016-02-10 | 南京华伯仪器科技有限公司 | Equipment and method for passivating silicon crystal |
| CN105322046B (en) * | 2014-06-13 | 2017-06-09 | 南京华伯仪器科技有限公司 | A kind of device and method for being passivated to crystalline silicon |
| CN106981441A (en) * | 2016-01-18 | 2017-07-25 | 茂迪股份有限公司 | Processing apparatus |
| CN110071178A (en) * | 2019-04-12 | 2019-07-30 | 泰州隆基乐叶光伏科技有限公司 | A kind of preparation method being sliced battery and slice battery and photovoltaic module |
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Application publication date: 20130918 |