CN105322046B - A kind of device and method for being passivated to crystalline silicon - Google Patents
A kind of device and method for being passivated to crystalline silicon Download PDFInfo
- Publication number
- CN105322046B CN105322046B CN201410265331.8A CN201410265331A CN105322046B CN 105322046 B CN105322046 B CN 105322046B CN 201410265331 A CN201410265331 A CN 201410265331A CN 105322046 B CN105322046 B CN 105322046B
- Authority
- CN
- China
- Prior art keywords
- heater
- crystalline silicon
- transparent chamber
- equipment
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention discloses a kind of device and method for being passivated to crystalline silicon, the equipment includes passivation unit and transmission unit, and the passivation unit includes：Body of heater, first charging aperture is provided with the body of heater side, and opposite side is provided with the first discharging opening；The endoceliac bottom of the stove is provided with transparent chamber, the side of the transparent chamber is provided with second charging aperture, opposite side is provided with the second discharging opening, the transparent chamber is connected with air inlet pipe, and the gas outlet end of the air inlet pipe is located at the transparent chamber interior, the gas access end of the air inlet pipe is located at body of heater outside；Heater and ultraviolet source are provided with the body of heater chamber；The transmission unit includes transmission belt, and the transmission belt passes sequentially through the first charging aperture and the second charging aperture and enters transparent chamber, and passes sequentially through second discharging opening and first discharging opening leaves body of heater.
Description
Technical field
The present invention relates to crystalline silicon preparation field, more particularly to a kind of equipment and side for being passivated to crystalline silicon
Method.
Background technology
At present, solar power generation all receives the attention of height in countries in the world, and as the core of solar power generation
Part-solar cell, turns into the study hotspot of various countries researcher naturally.Solar cell mentioned here generally refer to by
After single crystal silicon solar energy battery carries out serial or parallel connection, then the formed Crystalline Silicon PV Module of tight encapsulation.
In the prior art, it is present in the high voltage between the circuit in Crystalline Silicon PV Module and its grounded metal frame,
The continuous decrement of the photovoltaic performance of component can be caused.The mechanism for causing such decay is many, such as in above-mentioned high voltage
In the presence of, the Ion transfer occurred in the encapsulating material of component battery and the material of component upper surface layer and undersurface layer shows
As；The hot carrier phenomenon occurred in battery；The reallocation of electric charge reduces the active layer of battery；Related circuit is corroded
Deng.These cause the mechanism of decay to be referred to as current potential induction decay (Potential Induced Degradation, PID),
The photovoltaic performance of Crystalline Silicon PV Module is caused to be deteriorated.
The content of the invention
To solve the above problems, the embodiment of the invention discloses a kind of equipment for being passivated to crystalline silicon and side
Method, technical scheme is as follows：
A kind of equipment for being passivated to crystalline silicon, including passivation unit and transmission unit, the passivation unit bag
Include：Body of heater, first charging aperture is provided with the body of heater side, and opposite side is provided with the first discharging opening；In the body of heater chamber
Bottom be provided with transparent chamber, the side of the transparent chamber is provided with second charging aperture, opposite side is provided with second and goes out
Material mouth, the transparent chamber is connected with air inlet pipe, and the gas outlet end of the air inlet pipe is located at the transparent chamber interior, institute
The gas access end for stating air inlet pipe is located at body of heater outside；Heater and ultraviolet source are provided with the body of heater chamber；
The transmission unit includes transmission belt, and the transmission belt passes sequentially through the first charging aperture and described second
Charging aperture enters transparent chamber, and passes sequentially through second discharging opening and first discharging opening leaves body of heater.
Meanwhile, the embodiment of the present invention additionally provides a kind of method that application the said equipment is passivated to crystalline silicon, including：
Crystalline silicon after etching is sent into transparent chamber by transmission belt, oxygen is passed through by air inlet pipe in the transparent chamber room
Gas；
By the crystalline silicon in transparent chamber room by heating devices heat to default first temperature threshold；
The crystalline silicon for being heated to the first temperature threshold is carried out using the ultraviolet source for being preset at transparent exterior thereto ultraviolet
Line irradiates 5~150 seconds, the oxygen of transparent chamber interior is formed ozone, recycles the crystalline silicon table in ozone and transparent chamber room
There is oxidation reaction in face, generate passivation layer；
The crystalline silicon for generating passivation layer is removed into body of heater by transmission belt.
Technical solution of the present invention is placed in transparent chamber by by crystalline silicon, after the first temperature threshold is heated to,
Ultraviolet irradiation is carried out to the crystalline silicon in transparent chamber room using the ultraviolet source of transparent exterior thereto is preset at, due to ultraviolet
Can be reflected in transparent chamber, reflected so that ultraviolet can be from multi-angle irradiation surface of crystalline silicon so that crystalline silicon table
The oxygen in face change into after ozone with crystal pasc reaction, form the SiO of densification on its surface2Passivation layer, greatly reduces current potential and lures
The generation of hair decay (Potential Induced Degradation, PID), prevents the photovoltaic performance of Crystalline Silicon PV Module
It is deteriorated.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of device structure schematic diagram for being passivated to crystalline silicon that the present invention implements 1；
Fig. 2 is that the another kind of present invention implementation 1 is used for the device structure schematic diagram being passivated to crystalline silicon；
Fig. 3 is that the another kind of present invention implementation 1 is used for the device structure schematic diagram being passivated to crystalline silicon；
Fig. 4 is that the another kind of present invention implementation 1 is used for the device structure schematic diagram being passivated to crystalline silicon；
Fig. 5 is that the another kind of present invention implementation 1 is used for the device structure schematic diagram being passivated to crystalline silicon；
Fig. 6 is the partial enlargement structural representation for implementing adjusting means 15 and support 16 in 1；
Fig. 7 is the sectional view of the line A-A along Fig. 6.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1
As shown in figure 1, a kind of equipment for being passivated to crystalline silicon, including passivation unit and transmission unit,
The passivation unit includes：Body of heater 1, first charging aperture is provided with the body of heater side, and opposite side is provided with
One discharging opening；Bottom in the chamber of the body of heater 1 is provided with transparent chamber 2, and the side of the transparent chamber 2 is provided with second
Charging aperture, opposite side is provided with the second discharging opening, and the transparent chamber 2 is connected with air inlet pipe 3, and the air inlet pipe 3 gas
The port of export is located inside the transparent chamber 2, and the gas access end of the air inlet pipe 3 is located at the outside of the body of heater 1；The body of heater
Heater 4 and ultraviolet source 5 are provided with 1 chamber；
The transmission unit includes transmission belt 6, and the transmission belt 6 passes sequentially through the first charging aperture and described the
Two charging apertures enter transparent chamber 2, and pass sequentially through second discharging opening and first discharging opening leaves body of heater 1.
As shown in figure 1, the equipment being passivated to crystalline silicon also has other accessories, including：Framework 7, drive
Dynamic motor 8, drive belt 9, drive roll 10 and live-roller 11, the framework 7, motor 8, drive belt 9, the and of drive roll 10
Live-roller 11, the implementation of these accessories is same as the prior art, does not elaborate in the present embodiment.
It should be noted that Fig. 1 is a kind of structural representation of the equipment for being passivated to crystalline silicon, although figure
Multiple thermals 4 and multiple ultraviolet sources 5 are occurred in that in 1, it is not intended that there is respective counts in technical scheme
The thermal 4 of amount and the ultraviolet source 5 of respective numbers, Fig. 1 can only represent in technical scheme there is thermal 4 and purple
Outer light source 5, the thermal 4 and the particular number of ultraviolet source 5 shown in figure can not turn into the restriction to technical solution of the present invention.
In the inventive solutions, the ultraviolet source for preferably using is that can send 150-250nm length ultraviolet lines
Ultraviolet source.More preferably use the ultraviolet source that can send 180-220nm length ultraviolet lines.
In actual applications, above-mentioned heater 4 may be selected heat lamp or other can be to the gas in body of heater 1
The device for being heated, such as resistance heater.
It should be noted that species, quantity and installation site for heater 4, those skilled in the art can be with
Selected according to needs of production, the present invention is not especially limited herein.
During technical scheme is embodied, the material of transparent chamber can select quartz, of course, it is possible to
Understand, other transparent materials, such as glass or other materials that can pass through ultraviolet can be applied in the present invention
Technical scheme in.Selection those skilled in the art of transparent cell materials can determine according to needs of production, of the invention
It is not especially limited herein.
Be embodied technical scheme during, can by body of heater 1 be designed to detachable upper furnace body and under
Body of heater.Can so easily facilitate and the parts such as the transparent chamber 2 in body of heater 1, heater 4 or ultraviolet source 5 are installed
And maintenance.
Similarly, during technical scheme is embodied, can be also detachable so that transparent chamber 2 to be designed to
Transparent cavity and transparent cover plate, are installed and are safeguarded such that it is able to the part to transparent chamber.
During technical scheme is embodied, to prevent causing transmission belt 6 due to ultraviolet irradiation
It is aging, the material that transmission belt 6 can select UV resistant is made.Of course, it should be understood that not selecting the material of UV resistant
The transmission belt 6 that material is made can equally realize technical scheme.Those skilled in the art can be according to actual conditions
To select material, width, thickness and the pattern of transmission belt 6, the present invention is not especially limited herein.
Because ultraviolet can cause the aging of material, and in use, ultraviolet source 5 will be constantly in work shape
State, it is too fast that its heat for producing may cause the temperature of gas in stove sheet 1 to rise, and temperature is too high.
To solve this problem, as shown in Fig. 2 in the preferred embodiment of the present invention, through on the body of heater 1
Wall is provided with air exhausting device 12, and the air exhausting device bottom is provided with exhaust hood, and the exhaust hood is located in the chamber of the body of heater 1,
The ultraviolet source 5 is located in the exhaust hood.
Ultraviolet source 5 is placed in exhaust hood, be able to can be irradiated to the ultraviolet that ultraviolet source 5 sends is ensured
On crystalline silicon inside bright chamber 2, other devices in the chamber of body of heater 1 can be as far as possible reduced again and is subject to ultraviolet irradiation, meanwhile,
The ozone that ultraviolet in the cavity of body of heater 1 is excited can be discharged through exhaust hood.
When due to the long-term work of ultraviolet source 5 causes its environment temperature too high when, air exhausting device 12 to air draft outside body of heater, this
Sample can take away unnecessary heat, so as to the temperature around ultraviolet source 5 is reduced in suitable scope.
Because air exhausting device 7 belongs to prior art, its species, model can be by those skilled in the art according to actual conditions
To select, the present invention is not especially limited herein.
Crystalline silicon after being sent in transparent chamber 2, before leaving body of heater 1, due to being constantly in heated state,
So after it leaves body of heater 1, temperature is still higher, it is necessary to could enter subsequent processing after being cooled down.Using natural cooling
Mode can realize technical scheme, but, cool time is long, influence production efficiency.
Regarding to the issue above, in the preferred embodiment of the present invention, in the outside of the body of heater 1 and the first discharging opening
Top is provided with cooling device 13, as shown in Figure 3.
After crystalline silicon leaves body of heater 1, the lower section of cooling device 13 is sent to, cooling device 13 is cooled down to crystalline silicon,
The mode of cooling can purge cooling using cold wind, after crystalline silicon is cooled to suitable temperature, into subsequent processing.
Cooling device 13 belongs to prior art, and its species, model those skilled in the art can select according to actual conditions
Select, the present invention is not especially limited herein.
As shown in figure 4, in the preferred embodiment of the present invention, cloth is provided with the inner bottom part of transparent chamber 2
Tracheae 14, the gas distribution pipe 14 carries stomata, the gas outlet end of the gas inlet end of the gas distribution pipe 14 and the air inlet pipe 3
It is connected.
When air inlet pipe 3 in transparent chamber 2 to oxygen is conveyed, oxygen is delivered in gas distribution pipe 14 first, then by gas distribution
Stomata on the tube wall of pipe 14 in transparent chamber 2 to uniformly discharging.
Can so make distribution of the oxygen in transparent chamber room more uniform, be more beneficial for generating uniform passivation layer, not only
In this way, the consumption of oxygen can also be reduced greatly.Save production cost.
In actual applications, gas distribution pipe 14 can set one or more, and the cross section of gas distribution pipe 14 can be with circular, square
Or other shapes, gas distribution pipe 14 can be distributed in transparent with straight line pattern, spiral lamination pattern, serpentine pattern or other patterns
Cavity bottom.
It should be noted that the quantity of gas distribution pipe 14, the shape of cross section and distribution mode those skilled in the art can
To be selected according to actual conditions, the present invention is not especially limited herein.
In actual applications, transmission belt 6 may for some reason fluff or become tight, i.e., before and after transmission belt 6
Tightness is different, and this can influence the transmission of crystalline silicon.
To solve this problem, in a kind of preferred embodiment of technical solution of the present invention, as shown in figure 5, the biography
Defeated unit also includes drive adjusting device 15 and support 16, and drive adjusting device 15 is used to adjust the elastic of the transmission belt 6
The schematic enlarged-scale view of degree, adjusting means 15 and support 16 is as shown in fig. 6, sectional view such as Fig. 7 institutes of the drive adjusting device
Show, including：Regulating roller 151, plain bearing housing 152, bearing 153, stop screw 154 and spring 155, the both sides of the support 16
Same position is respectively arranged with stopper slot, and plain bearing housing 152, the plain bearing housing are respectively arranged with the stopper slot
152 are fitted on the support 16 by the stop screw 154；The regulating roller 151 is arranged on the plain bearing housing 152
Bearing 153 on；The two ends of the spring 155 are individually fixed in the plain bearing housing 152 and the support 16, so that described
Plain bearing housing 152 is slided in the stopper slot.
After increasing drive adjusting device 15, when the tightness of transmission belt 6 is less than default tightness, spring
155 driving plain bearing housings 152 are slided in stopper slot so that the tightness of transmission belt 6 returns to default elastic journey
Degree；When the tightness of transmission belt 6 is more than default tightness, spring 155 drives plain bearing housing 152 in stopper slot
Inside slide round about so that the tightness of transmission belt 6 returns to default tightness.
Be embodied technical scheme during, can by live-roller and driven roller be designed to two ends perpendicular to
The diameter of section of axis is less than diameter of section of the center perpendicular to axis, when can so ensure that transmission belt 6 runs
Deviation phenomenon will not occur.
It should be noted that each preferred embodiment can individually be implemented above, it is also possible to which part combination is together or entirely
Portion combines implementation, to reach more preferable effect.Which kind of mode is specifically used, those skilled in the art can be according to reality
Situation is selected, and the present invention is not limited thereto.
Equipment corresponding to being used to be passivated crystalline silicon above, the equipment is applied to crystalline substance present invention also offers one kind
The method that body silicon is passivated.The method is described with reference to embodiment 2-5.
Embodiment 2
Crystalline silicon after etching is sent into transparent chamber by transmission belt, oxygen is passed through by air inlet pipe in the transparent chamber room
Gas；
By the crystalline silicon in transparent chamber room by heating devices heat to 30 DEG C；
Ultraviolet irradiation is carried out to the crystalline silicon for being heated to 30 DEG C using the ultraviolet source for being preset at transparent exterior thereto, is shone
The time is penetrated for 140 seconds, makes the crystalline silicon in transparent chamber room that oxidation reaction to occur, generate passivation layer；
The crystalline silicon for generating passivation layer is removed into body of heater by transmission belt.
Embodiment 3
Crystalline silicon after etching is sent into transparent chamber by transmission belt, oxygen is passed through by air inlet pipe in the transparent chamber room
Gas；
By the crystalline silicon in transparent chamber room by heating devices heat to 300 DEG C；
Ultraviolet irradiation is carried out to the crystalline silicon for being heated to 300 DEG C using the ultraviolet source for being preset at transparent exterior thereto,
Irradiation time is 5 seconds, makes the crystalline silicon in transparent chamber room that oxidation reaction to occur, and generates passivation layer；
The crystalline silicon for generating passivation layer is removed into body of heater by transmission belt.
Embodiment 4
Using the paralysis facility with cooling device 8, to being passivated to crystalline silicon.
Crystalline silicon after etching is sent into transparent chamber by transmission belt, oxygen is passed through by air inlet pipe in the transparent chamber room
Gas；
By the crystalline silicon in transparent chamber room by heating devices heat to 80 DEG C；
Ultraviolet irradiation is carried out to the crystalline silicon for being heated to 80 DEG C using the ultraviolet source for being preset at transparent exterior thereto,
Irradiation time is 100 seconds, makes the crystalline silicon in transparent chamber room that oxidation reaction to occur, and generates passivation layer；
The crystalline silicon for generating passivation layer is removed into body of heater by transmission belt.
After the crystalline silicon that will generate passivation layer removes body of heater by transmission belt, further include：In the cooling
60 DEG C are cooled in the presence of device.
Embodiment 5
Using the paralysis facility with cooling device 8, to being passivated to crystalline silicon.
Crystalline silicon after etching is sent into transparent chamber by transmission belt, oxygen is passed through by air inlet pipe in the transparent chamber room
Gas；
By the crystalline silicon in transparent chamber room by heating devices heat to 240 DEG C；
Ultraviolet irradiation is carried out to the crystalline silicon for being heated to 240 DEG C using the ultraviolet source for being preset at transparent exterior thereto,
Irradiation time is 30 seconds, makes the crystalline silicon in transparent chamber room that oxidation reaction to occur, and generates passivation layer；
The crystalline silicon for generating passivation layer is removed into body of heater by transmission belt.
After the crystalline silicon that will generate passivation layer removes body of heater by transmission belt, further include：In the cooling
15 DEG C are cooled in the presence of device.
Performance test
(1) PID tests
Take five groups of crystalline silicons, respectively 2 groups of embodiment, 3 groups of embodiment, 4 groups of embodiment, 5 groups of embodiment and control group are (not
The crystalline silicon of passivation), every group three.Tested as follows after this five groups of crystalline silicons are made into battery panel components, wherein,
Belong to prior art because crystalline silicon is made battery panel components, and its preparation method does not influence in itself on test, this area skill
Art personnel can realize in the case of no creative work completely.
Test the standard (IEC62804Ed.1.0) of the formulation according to International Electrotechnical Commission.Test condition is：Test wrapper
Border temperature：60℃±2℃；Test environment relative humidity：85% ± 5%；Testing time：96 hours.Each group test result is made even
After average as shown in table 1.
Table 1PID test results
| Group | 2 groups of embodiment | 3 groups of embodiment | 4 groups of embodiment | 5 groups of embodiment | Control group |
| Pid value | 0.6% | 0.3% | 0.8% | 0.6% | 35% |
(2) conversion efficiency test
Take five groups of crystalline silicons, respectively 2 groups of embodiment, 3 groups of embodiment, 4 groups of embodiment, 5 groups of embodiment and control group are (not
The crystalline silicon of passivation), every group three, tested as follows after each group crystalline silicon is made into battery panel components, wherein, by
Battery panel components are made in crystalline silicon belong to prior art, and its preparation method does not influence in itself on test, art technology
Personnel can realize in the case of no creative work completely.
Each group battery panel components are irradiated using etalon optical power, and use solar cell module tester (model
It is SMT-A) test Vop (optimum operating voltage), Iop (recommended current), wherein, etalon optical power is AM1.5, and 1000W/ puts down
Square rice, 25 DEG C of assembly temperature.
According to formula η=(Vop × Iop)/(Pin × S) × 100%
Calculate the efficiency of battery panel components.Wherein, Pin is incident intensity, is standard light in this embodiment of the present invention
By force, S is the silicon area of battery panel components.Each group test result is as shown in table 2 after averaging.
The conversion efficiency test result of table 2
After crystalline silicon life passivation layer is can be seen that in Tables 1 and 2, compared with the crystalline silicon not being passivated, can be effective
PID phenomenons are reduced, and luminous energy can be improved and specially change efficiency.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.And, term " including ", "comprising" or its any other variant be intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
Each embodiment in this specification is described by the way of correlation, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.Especially for device reality
Apply for example, because it is substantially similar to embodiment of the method, so description is fairly simple, related part is referring to embodiment of the method
Part explanation.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the scope of the present invention.It is all
Any modification, equivalent substitution and improvements made within the spirit and principles in the present invention etc., are all contained in protection scope of the present invention
It is interior.
Claims (15)
1. a kind of equipment for being passivated to crystalline silicon, including passivation unit and transmission unit, it is characterised in that
The passivation unit includes：Body of heater, first charging aperture is provided with the body of heater side, and opposite side is provided with the first discharging
Mouthful；The endoceliac bottom of the stove is provided with transparent chamber, the side of the transparent chamber second charging aperture is provided with, separately
Side is provided with the second discharging opening, and the transparent chamber is connected with air inlet pipe, and the gas outlet end of the air inlet pipe is located at institute
Transparent chamber interior is stated, the gas access end of the air inlet pipe is located at body of heater outside；Heating is provided with the body of heater chamber
Device and ultraviolet source；The heater is heat lamp or resistance heater；Bottom is set in the transparent chamber room
There is a gas distribution pipe, the gas distribution pipe carries stomata, the gas outlet end phase of the gas inlet end of the gas distribution pipe and the air inlet pipe
Even；
The transmission unit includes transmission belt, and the transmission belt passes sequentially through the first charging aperture and second charging
Mouthful enter transparent chamber, and pass sequentially through second discharging opening and first discharging opening leaves body of heater.
2. equipment as claimed in claim 1, it is characterised in that the body of heater upper wall is provided with air exhausting device, the row
Wind apparatus bottom is provided with exhaust hood, and the exhaust hood is located in the body of heater chamber, and the ultraviolet source is located at the exhaust hood
It is interior.
3. equipment as claimed in claim 1, it is characterised in that be provided with the outside of the body of heater and above the first discharging opening cold
But device.
4. the equipment as described in any one in claim 1-3, it is characterised in that the transmission unit also includes driving adjusting
Device, the tightness for adjusting the transmission belt, the drive adjusting device includes：Support, regulating roller, sliding bearing
Seat, stop screw and spring, the same position of the support both sides are respectively arranged with stopper slot, are respectively provided with the stopper slot
There is plain bearing housing, the plain bearing housing is fitted on the bracket by the stop screw；The regulating roller is arranged on
On the bearing of the plain bearing housing；The two ends of the spring are individually fixed in the plain bearing housing and the support, so that
The plain bearing housing is slided in the stopper slot.
5. the equipment as described in any one in claim 1-3, the transmission unit also includes：Live-roller and driven roller, institute
Stating live-roller and driven roller is used to drive the transmission belt to rotate, it is characterised in that the live-roller and driven roller two ends are hung down
The straight diameter of section in axis is less than diameter of section of the center perpendicular to axis.
6. the equipment as described in any one in claim 1-3, it is characterised in that the material of the transparent chamber for quartz or
Glass.
7. the equipment as described in any one in claim 1-3, it is characterised in that the body of heater includes detachable upper furnace body
And lower furnace body.
8. the equipment as described in any one in claim 1-3, it is characterised in that the transparent chamber include transparent cavity and
Transparent cover plate.
9. the equipment as described in any one in claim 1-3, it is characterised in that the ultraviolet that the ultraviolet source sends
Wave-length coverage is 150-250nm.
10. the equipment as described in any one in claim 1-3, it is characterised in that the ultraviolet that the ultraviolet source sends
Wave-length coverage be 180-220nm.
The method that equipment described in a kind of 11. application claims 1 is passivated to crystalline silicon, it is characterised in that including：
Crystalline silicon after etching is sent into transparent chamber by transmission belt, oxygen is passed through by air inlet pipe in the transparent chamber room；
By the crystalline silicon in transparent chamber room by heating devices heat to default first temperature threshold；
Ultraviolet photograph is carried out to the crystalline silicon for being heated to the first temperature threshold using the ultraviolet source for being preset at transparent exterior thereto
Penetrate 5~150 seconds, the oxygen of transparent chamber interior is formed ozone, ozone aoxidizes the surface of crystalline silicon in transparent chamber room
Reaction, generates passivation layer；
The crystalline silicon for generating passivation layer is removed into body of heater by transmission belt.
12. methods as claimed in claim 11, it is characterised in that the equipment also includes cooling device, the cooling device
Positioned at body of heater outside and the first discharging opening top；
After the crystalline silicon that will generate passivation layer removes body of heater by transmission belt, methods described is further included：Described
Second temperature threshold value is cooled in the presence of cooling device.
13. methods as claimed in claim 11, it is characterised in that the scope of first temperature threshold is 20-300 DEG C.
14. methods as claimed in claim 13, it is characterised in that the scope of first temperature threshold is 80-250 DEG C.
15. methods as claimed in claim 12, it is characterised in that the scope of the second temperature threshold value is 10-70 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410265331.8A CN105322046B (en) | 2014-06-13 | 2014-06-13 | A kind of device and method for being passivated to crystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410265331.8A CN105322046B (en) | 2014-06-13 | 2014-06-13 | A kind of device and method for being passivated to crystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105322046A CN105322046A (en) | 2016-02-10 |
| CN105322046B true CN105322046B (en) | 2017-06-09 |
Family
ID=55249047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410265331.8A Expired - Fee Related CN105322046B (en) | 2014-06-13 | 2014-06-13 | A kind of device and method for being passivated to crystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105322046B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN108054112B (en) * | 2017-12-21 | 2021-11-30 | 重庆超硅半导体有限公司 | Method for testing minority carrier lifetime of IC-level silicon wafer |
| CN108417474B (en) * | 2018-01-24 | 2021-12-21 | 锦州阳光能源有限公司 | Crystalline silicon thermal oxidation process and system and crystalline silicon solar cell thermal oxidation process |
| CN111509090B (en) * | 2020-05-08 | 2022-05-31 | 常州时创能源股份有限公司 | Battery edge passivation method |
| CN114400271A (en) * | 2020-12-31 | 2022-04-26 | 深圳市拉普拉斯能源技术有限公司 | Passivation equipment that possesses gaseous even dispersion function |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442902B (en) * | 1999-02-08 | 2001-06-23 | Steag Rtp Systems Inc | Process for forming thin dielectric layers in semiconductor devices |
| CN1592958A (en) * | 2001-11-08 | 2005-03-09 | 株式会社明电舍 | Method and device for forming oxide film |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN103526183A (en) * | 2012-07-06 | 2014-01-22 | 东京毅力科创株式会社 | Film deposition apparatus, and method of depositing a film |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010066298A1 (en) * | 2008-12-11 | 2010-06-17 | Osram Gesellschaft mit beschränkter Haftung | Uv light having a plurality of uv lamps, particularly for technical product processing |
| CN201694598U (en) * | 2010-05-14 | 2011-01-05 | 东莞巨扬电器有限公司 | Conveying device provided with press plate |
| CN202089519U (en) * | 2011-05-31 | 2011-12-28 | 吴江迈为技术有限公司 | Device with flexible belts for conveying solar cells |
| CN202148015U (en) * | 2011-06-24 | 2012-02-22 | 无锡杰思物流设备有限公司 | Belt conveyer |
| DE102011084644A1 (en) * | 2011-10-17 | 2013-04-18 | Osram Gmbh | METHOD FOR PRODUCING A PHOTOVOLTAIC ELEMENT WITH A SILICON DIOXIDE LAYER |
| CN203439577U (en) * | 2013-08-28 | 2014-02-19 | 深圳市海目星激光科技有限公司 | Flexible unit production line |
-
2014
- 2014-06-13 CN CN201410265331.8A patent/CN105322046B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442902B (en) * | 1999-02-08 | 2001-06-23 | Steag Rtp Systems Inc | Process for forming thin dielectric layers in semiconductor devices |
| CN1592958A (en) * | 2001-11-08 | 2005-03-09 | 株式会社明电舍 | Method and device for forming oxide film |
| CN103526183A (en) * | 2012-07-06 | 2014-01-22 | 东京毅力科创株式会社 | Film deposition apparatus, and method of depositing a film |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322046A (en) | 2016-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105322046B (en) | A kind of device and method for being passivated to crystalline silicon | |
| CN104505427B (en) | Improve method and the device of crystal silicon solar cell sheet LID and PID | |
| CN107146828B (en) | The solar cell radiation annealing furnace of uniform high-efficiency annealing | |
| CN106711285A (en) | Method for eliminating light induced degradation of boron-doped crystalline silicon cell and device thereof | |
| US8998606B2 (en) | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices | |
| CN106229385B (en) | Solar cell radiation annealing stove | |
| CN205398771U (en) | Silicon chip diffusion furnace for solar cell | |
| WO2009128253A1 (en) | Solar cell thermal processing device | |
| CN104795469A (en) | Roller-way-type solar cell irradiation annealing furnace | |
| CN201389899Y (en) | Casting machine with microwave heating drying device | |
| CN105002460A (en) | Method and device for continuously preparing high-silicon silicon steel thin strip through current composite diffusion method | |
| CN204558429U (en) | A kind of device reducing photo attenuation | |
| CN208995631U (en) | A kind of net belt type bright annealing furnace | |
| CN105908260A (en) | Diffusion furnace for crystalline silicon solar cells | |
| TWM496236U (en) | Crystal silicon oxidation processing apparatus for solar cell sheet passivation | |
| CN109695061A (en) | Lamp box apparatus, attemperator and annealing furnace apparatus | |
| TWI538242B (en) | Apparatus for manufacture of solar cells | |
| CN209685956U (en) | Lamp box apparatus, attemperator and annealing furnace apparatus | |
| CN107204389A (en) | A kind of quick light decay device of silicon solar cell using LED as light source | |
| CN208736783U (en) | A kind of non-yellowing test device | |
| CN206849855U (en) | It is a kind of using LED as the quick light decay device of the silicon solar cell of light source | |
| CN102135377A (en) | Heat treatment furnace for dynamically and continuously preparing high-temperature superconductive strip with fluorine-free chemical solution deposition method | |
| CN104993020B (en) | The selenylation reaction device that can improve selenizing quality and the method carrying out selenylation reaction | |
| CN204809244U (en) | Can improve selenylation reaction unit of selenylation quality | |
| CN212086156U (en) | Light attenuation testing device for crystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170609 Termination date: 20210613 |