CN105322046A - Equipment and method for passivating silicon crystal - Google Patents
Equipment and method for passivating silicon crystal Download PDFInfo
- Publication number
- CN105322046A CN105322046A CN201410265331.8A CN201410265331A CN105322046A CN 105322046 A CN105322046 A CN 105322046A CN 201410265331 A CN201410265331 A CN 201410265331A CN 105322046 A CN105322046 A CN 105322046A
- Authority
- CN
- China
- Prior art keywords
- heater
- transparent chamber
- equipment
- crystalline silicon
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention discloses equipment and method for passivating a silicon crystal. The equipment comprises a passivating unit and a transmitting unit. The passivating unit comprises a furnace. One side of the furnace is provided with a first feed port, and the other side is provided with a first discharge port. The lower part in a furnace cavity is provided with a transparent chamber. One side of the transparent chamber is provided with a second feed port, and the other side is provided with a second discharge port. The transparent chamber is connected to an air inlet pipe. The air outlet end of the air inlet pipe is in the transparent chamber. The air inlet end of the air inlet pipe is outside the furnace. The furnace chamber is internally provided with a heating device and a UV light source. The transmitting unit comprises a transmission belt which goes through the first feed port and the second feed port orderly to enter into the transparent chamber and goes through the second discharge port and the first discharge port orderly to leave the furnace body.
Description
Technical field
The present invention relates to crystalline silicon preparation field, particularly a kind of Apparatus and method for for carrying out passivation to crystalline silicon.
Background technology
At present, solar power generation all receives the attention of height in countries in the world, and as the core component-solar cell of solar power generation, naturally becomes the study hotspot of various countries researcher.After solar cell mentioned here generally refers to and single crystal silicon solar energy battery is carried out serial or parallel connection, more tightly encapsulate the Crystalline Silicon PV Module formed.
In prior art, be present in the high voltage between circuit in Crystalline Silicon PV Module and its grounded metal frame, the continuous decrement of the photovoltaic performance of assembly can be caused.The mechanism causing this type of to decay is many-sided, such as, under above-mentioned high-tension effect, and the Ion transfer phenomenon occurred in the encapsulating material of assembly battery and the material of assembly upper surface layer and undersurface layer; The hot carrier phenomenon occurred in battery; The reallocation of electric charge reduces the active layer of battery; Relevant circuit is corroded etc.These cause the mechanism of decay to be referred to as current potential to bring out decay (PotentialInducedDegradation, PID), cause the photovoltaic performance of Crystalline Silicon PV Module to be deteriorated.
Summary of the invention
For solving the problem, the embodiment of the invention discloses a kind of Apparatus and method for for carrying out passivation to crystalline silicon, technical scheme is as follows:
For carrying out an equipment for passivation to crystalline silicon, comprise passivation unit and transmission unit, described passivation unit comprises: body of heater, and described body of heater side is provided with the first charging aperture, and opposite side is provided with the first discharging opening; The endoceliac bottom of described stove is provided with transparent chamber, the side of described transparent chamber is provided with the second charging aperture, opposite side is provided with the second discharging opening, described transparent chamber is connected with air inlet pipe, and the gas outlet end of described air inlet pipe is positioned at described transparent chamber chamber interior, the gas access end of described air inlet pipe is positioned at outside described body of heater; Heater and ultraviolet source is provided with in described body of heater chamber;
Described transmission unit comprises transmission belt, and described transmission belt enters transparent chamber by described first charging aperture and described second charging aperture successively, and leaves body of heater by described second discharging opening and described first discharging opening successively.
Meanwhile, the embodiment of the present invention additionally provides a kind ofly applies the said equipment carries out passivation method to crystalline silicon, comprising:
Crystalline silicon after etching is sent into transparent chamber by transmission belt, and described transparent chamber indoor pass into oxygen by air inlet pipe;
By the first temperature threshold that the crystalline silicon of transparent chamber indoor is extremely preset by heating devices heat;
The ultraviolet source being preset at transparent chamber outdoor is utilized to carry out Ultraviolet radiation 5 ~ 150 seconds to the crystalline silicon being heated to the first temperature threshold, the oxygen of transparent chamber chamber interior is made to form ozone, the surface of crystalline silicon generation oxidation reaction of recycling ozone and transparent chamber indoor, generates passivation layer;
The crystalline silicon generating passivation layer is shifted out body of heater by transmission belt.
Technical solution of the present invention is by being placed in transparent chamber by crystalline silicon, after being heated to the first temperature threshold, the ultraviolet source being preset at transparent chamber outdoor is utilized to carry out Ultraviolet radiation to the crystalline silicon of transparent chamber indoor, because ultraviolet can reflect, reflect in transparent chamber, make ultraviolet can from multi-angle irradiation surface of crystalline silicon, react with crystalline silicon after making the oxygen conversion of surface of crystalline silicon become ozone, form fine and close SiO on its surface
2passivation layer, greatly reduces the generation that current potential brings out decay (PotentialInducedDegradation, PID), prevents the photovoltaic performance of Crystalline Silicon PV Module to be deteriorated.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of device structure schematic diagram for carrying out passivation to crystalline silicon of the invention process 1;
Fig. 2 is that the another kind of the invention process 1 is for carrying out the device structure schematic diagram of passivation to crystalline silicon;
Fig. 3 is that the another kind of the invention process 1 is for carrying out the device structure schematic diagram of passivation to crystalline silicon;
Fig. 4 is that the another kind of the invention process 1 is for carrying out the device structure schematic diagram of passivation to crystalline silicon;
Fig. 5 is that the another kind of the invention process 1 is for carrying out the device structure schematic diagram of passivation to crystalline silicon;
Fig. 6 is the partial enlargement structural representation of adjusting device 15 and support 16 in enforcement 1;
Fig. 7 is the cutaway view along A-A line in Fig. 6.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
As shown in Figure 1, a kind of equipment for carrying out passivation to crystalline silicon, comprises passivation unit and transmission unit,
Described passivation unit comprises: body of heater 1, and described body of heater side is provided with the first charging aperture, and opposite side is provided with the first discharging opening; Bottom in described body of heater 1 chamber is provided with transparent chamber 2, the side of described transparent chamber 2 is provided with the second charging aperture, opposite side is provided with the second discharging opening, described transparent chamber 2 is connected with air inlet pipe 3, and the gas outlet end of described air inlet pipe 3 is positioned at described transparent chamber 2 inside, the gas access end of described air inlet pipe 3 is positioned at outside described body of heater 1; Heater 4 and ultraviolet source 5 is provided with in described body of heater 1 chamber;
Described transmission unit comprises transmission belt 6, and described transmission belt 6 enters transparent chamber 2 by described first charging aperture and described second charging aperture successively, and leaves body of heater 1 by described second discharging opening and described first discharging opening successively.
As shown in Figure 1, described also have other accessory to the equipment that crystalline silicon carries out passivation, comprise: framework 7, drive motors 8, driving belt 9, drive roll 10 and live-roller 11, described framework 7, drive motors 8, driving belt 9, drive roll 10 and live-roller 11, the implementation of these accessories is same as the prior art, does not elaborate in the present embodiment.
It should be noted that, Fig. 1 is a kind of structural representation of the equipment for carrying out passivation to crystalline silicon, although there is multiple thermal 4 and multiple ultraviolet source 5 in Fig. 1, but do not represent in technical scheme of the present invention, just to there is the thermal 4 of respective numbers and the ultraviolet source 5 of respective numbers, Fig. 1 can only represent in technical scheme of the present invention that the concrete quantity that there is the thermal 4 and ultraviolet source 5 shown in thermal 4 and ultraviolet source 5, figure can not become the restriction to technical solution of the present invention.
In the inventive solutions, the ultraviolet source preferably used is for sending the ultraviolet source of 150-250nm length ultraviolet line.More preferably the ultraviolet source that can send 180-220nm length ultraviolet line is used.
In actual applications, above-mentioned heater 4 can select heat lamp or other device that can heat the gas in body of heater 1, such as resistance heater.
It should be noted that, for the kind of heater 4, quantity and installation site, those skilled in the art can select according to needs of production, and the present invention does not do concrete restriction at this.
Implement in technical scheme process of the present invention concrete, the material of transparent chamber can select quartz, certainly, is understandable that, other transparent material, such as glass or other can be able to apply in the inventive solutions through ultraviolet material.Selection those skilled in the art of transparent cell materials can determine according to needs of production, and the present invention does not do concrete restriction at this.
In technical scheme process of the present invention, body of heater 1 can be designed to detachable upper furnace body and lower furnace body concrete enforcement.Can more be convenient to like this carry out installation and maintenance to parts such as the transparent chamber 2 in body of heater 1, heater 4 or ultraviolet sources 5.
In like manner, in technical scheme process of the present invention, also so that transparent chamber 2 is designed to detachable transparent cavity and transparent cover plate, thus installation and maintenance can be carried out to the parts of transparent chamber concrete enforcement.
Implement in technical scheme process of the present invention concrete, for preventing because ultraviolet irradiation causes the aging of transmission belt 6, transmission belt 6 can select the material of UV resistant to make.It is appreciated of course that the transmission belt 6 not selecting the material of UV resistant to make can realize technical scheme of the present invention equally.Those skilled in the art can select the material of transmission belt 6, width, thickness and pattern according to actual conditions, and the present invention does not do concrete restriction at this.
Because ultraviolet can cause the aging of material, and in use, ultraviolet source 5 is always in running order, and its heat produced may cause the temperature of gas in stove basis 1 to rise too fast, and temperature is too high.
For addressing this problem, as shown in Figure 2, in the preferred embodiment of the present invention, described body of heater 1 upper wall is provided with air exhausting device 12, described air exhausting device bottom is provided with exhaust hood, and described exhaust hood is positioned at described body of heater 1 chamber, and described ultraviolet source 5 is positioned at described exhaust hood.
Ultraviolet source 5 is placed in exhaust hood, can ensure that the ultraviolet that ultraviolet source 5 sends can be irradiated on the crystalline silicon of transparent chamber 2 inside, other device in body of heater 1 chamber can be reduced again as far as possible and be subject to ultraviolet irradiation, meanwhile, the ozone that the ultraviolet in body of heater 1 cavity excites can be discharged through exhaust hood.
When causing its environment temperature too high due to ultraviolet source 5 long-term work, air exhausting device 12, to air draft outside body of heater, can take away unnecessary heat like this, thus the temperature around ultraviolet source 5 is reduced in suitable scope.
Because air exhausting device 7 belongs to prior art, its kind, model can be selected according to actual conditions by those skilled in the art, and the present invention does not do concrete restriction at this.
Crystalline silicon is being sent to after in transparent chamber 2, until leave body of heater 1, owing to being in by heated condition always, so after it leaves body of heater 1, temperature is still higher, just can enter subsequent processing after needs cool.Adopt the mode of nature cooling can realize technical scheme of the present invention, but cooling time is long, affects production efficiency.
For the problems referred to above, in the preferred embodiment of the present invention, cooling device 13 is provided with above the first discharging opening outside the described body of heater 1, as shown in Figure 3.
After crystalline silicon leaves body of heater 1, be sent to below cooling device 13, cooling device 13 pairs of crystalline silicons cool, and the mode of cooling can use cold wind to purge cooling, after crystalline silicon is cooled to suitable temperature, enters subsequent processing.
Cooling device 13 belongs to prior art, and its kind, model those skilled in the art can select according to actual conditions, and the present invention does not do concrete restriction at this.
As shown in Figure 4, in the preferred embodiment of the present invention, described transparent chamber 2 inner bottom part is provided with gas distribution pipe 14, described gas distribution pipe 14 is with pore, and the gas inlet end of described gas distribution pipe 14 is connected with the gas outlet end of described air inlet pipe 3.
When air inlet pipe 3 is in transparent chamber 2 during delivering oxygen, first oxygen is delivered in gas distribution pipe 14, then evenly discharged in transparent chamber 2 by the pore on gas distribution pipe 14 tube wall.
The distribution of oxygen in transparent chamber indoor can be made so more even, be more conducive to generating uniform passivation layer, moreover, can also the large consumption reducing oxygen.Save production cost.
In actual applications, gas distribution pipe 14 can arrange one or more, and the cross section of gas distribution pipe 14 can circular, square or other shape, and gas distribution pipe 14 can be distributed in transparent cavity bottom with straight line pattern, spiral pattern, serpentine pattern or other pattern.
It should be noted that, the quantity of gas distribution pipe 14, the shape of cross section and distribution mode those skilled in the art can select according to actual conditions, and the present invention does not do concrete restriction at this.
In actual applications, transmission belt 6 may fluff for a certain reason or become tight, and the tightness namely before and after transmission belt 6 is different, and this can affect the transmission of crystalline silicon.
For addressing this problem, in a kind of preferred implementation of technical solution of the present invention, as shown in Figure 5, described transmission unit also comprises drive adjusting device 15 and support 16, drive adjusting device 15 is for regulating the tightness of described transmission belt 6, the schematic enlarged-scale view of adjusting device 15 and support 16 as shown in Figure 6, the cutaway view of described drive adjusting device as shown in Figure 7, comprise: dancer rools 151, plain bearing housing 152, bearing 153, stop screw 154 and spring 155, the same position of described support 16 both sides is respectively arranged with stopper slot, plain bearing housing 152 is respectively arranged with in described stopper slot, described plain bearing housing 152 is fitted on described support 16 by described stop screw 154, described dancer rools 151 is arranged on the bearing 153 of described plain bearing housing 152, the two ends of described spring 155 are individually fixed in described plain bearing housing 152 and described support 16, slide in described stopper slot to make described plain bearing housing 152.
After increasing drive adjusting device 15, when the tightness of transmission belt 6 is less than default tightness, spring 155 drives plain bearing housing 152 to slide in stopper slot, makes the tightness of transmission belt 6 return to default tightness; When the tightness of transmission belt 6 is greater than default tightness, spring 155 drives plain bearing housing 152 to slide round about in stopper slot, makes the tightness of transmission belt 6 return to default tightness.
Implement in technical scheme process of the present invention concrete, live-roller and driven roller can be designed to two ends and be less than the diameter of section of center perpendicular to axis perpendicular to the diameter of section of axis, when can ensure that transmission belt 6 runs like this, deviation phenomenon can not occur.
It should be noted that, namely above each preferred implementation can be implemented separately, also can combine enforcement together or all by incorporating aspects, to reach better effect.Which kind of mode of concrete employing, those skilled in the art can select according to actual conditions, and the present invention is in this no limit.
Corresponding to above for carrying out the equipment of passivation to crystalline silicon, present invention also offers this equipment of a kind of application carries out passivation method to crystalline silicon.Below in conjunction with embodiment 2-5, the method is described.
Embodiment 2
Crystalline silicon after etching is sent into transparent chamber by transmission belt, and described transparent chamber indoor pass into oxygen by air inlet pipe;
By the crystalline silicon of transparent chamber indoor by heating devices heat to 30 DEG C;
Utilize the ultraviolet source being preset at transparent chamber outdoor to carry out Ultraviolet radiation to the crystalline silicon being heated to 30 DEG C, irradiation time is 140 seconds, makes the crystalline silicon generation oxidation reaction of transparent chamber indoor, generates passivation layer;
The crystalline silicon generating passivation layer is shifted out body of heater by transmission belt.
Embodiment 3
Crystalline silicon after etching is sent into transparent chamber by transmission belt, and described transparent chamber indoor pass into oxygen by air inlet pipe;
By the crystalline silicon of transparent chamber indoor by heating devices heat to 300 DEG C;
The ultraviolet source being preset at transparent chamber outdoor is utilized to carry out Ultraviolet radiation to the crystalline silicon being heated to 300 DEG C, irradiation time is 5 seconds, makes the crystalline silicon generation oxidation reaction of transparent chamber indoor, generates passivation layer;
The crystalline silicon generating passivation layer is shifted out body of heater by transmission belt.
Embodiment 4
Apply the paralysis facility with cooling device 8, carry out passivation to crystalline silicon.
Crystalline silicon after etching is sent into transparent chamber by transmission belt, and described transparent chamber indoor pass into oxygen by air inlet pipe;
By the crystalline silicon of transparent chamber indoor by heating devices heat to 80 DEG C;
The ultraviolet source being preset at transparent chamber outdoor is utilized to carry out Ultraviolet radiation to the crystalline silicon being heated to 80 DEG C, irradiation time is 100 seconds, makes the crystalline silicon generation oxidation reaction of transparent chamber indoor, generates passivation layer;
The crystalline silicon generating passivation layer is shifted out body of heater by transmission belt.
After the described crystalline silicon by generation passivation layer shifts out body of heater by transmission belt, comprise further: under the effect of described cooling device, be cooled to 60 DEG C.
Embodiment 5
Apply the paralysis facility with cooling device 8, carry out passivation to crystalline silicon.
Crystalline silicon after etching is sent into transparent chamber by transmission belt, and described transparent chamber indoor pass into oxygen by air inlet pipe;
By the crystalline silicon of transparent chamber indoor by heating devices heat to 240 DEG C;
Utilize the ultraviolet source being preset at transparent chamber outdoor to carry out Ultraviolet radiation to the crystalline silicon being heated to 240 DEG C, irradiation time is 30 seconds, makes the crystalline silicon generation oxidation reaction of transparent chamber indoor, generates passivation layer;
The crystalline silicon generating passivation layer is shifted out body of heater by transmission belt.
After the described crystalline silicon by generation passivation layer shifts out body of heater by transmission belt, comprise further: under the effect of described cooling device, be cooled to 15 DEG C.
Performance test
(1) PID test
Get five groups of crystalline silicons, be respectively embodiment 2 groups, embodiment 3 groups, embodiment 4 groups, embodiment 5 groups and control group (crystalline silicon of non-passivation), often organize three.Test as follows after these five groups of crystalline silicons are made battery panel components, wherein, make battery panel components due to crystalline silicon and belong to prior art, and its preparation method is on test not impact itself, those skilled in the art can realize when not having creative work completely.
Test the standard (IEC62804Ed.1.0) according to the formulation of International Electrotechnical Commission.Test condition is: test environment temperature: 60 DEG C ± 2 DEG C; Test environment relative humidity: 85% ± 5%; Testing time: 96 hours.Each group of test result is as shown in table 1 after averaging.
Table 1PID test result
| Group | Embodiment 2 groups | Embodiment 3 groups | Embodiment 4 groups | Embodiment 5 groups | Control group |
| Pid value | 0.6％ | 0.3％ | 0.8％ | 0.6％ | 35％ |
(2) conversion efficiency test
Get five groups of crystalline silicons, be respectively embodiment 2 groups, embodiment 3 groups, embodiment 4 groups, embodiment 5 groups and control group (crystalline silicon of non-passivation), often organize three, test as follows after each group of crystalline silicon is made battery panel components, wherein, make battery panel components due to crystalline silicon and belong to prior art, and its preparation method is on test not impact itself, those skilled in the art can realize when not having creative work completely.
Etalon optical power is adopted to irradiate each Battery pack board component, and use solar module tester (model is SMT-A) to test Vop (optimum operating voltage), Iop (recommended current), wherein, etalon optical power is AM1.5,1000W/ square metre, assembly temperature 25 DEG C.
According to formula η=(Vop × Iop)/(Pin × S) × 100%
Calculate the efficiency of battery panel components.Wherein, Pin is incident intensity, is etalon optical power in this embodiment of the present invention, and S is the silicon area of battery panel components.Each group of test result is as shown in table 2 after averaging.
Table 2 conversion efficiency test result
As can be seen from table 1 and table 2, after the raw passivation layer of crystalline silicon, compared with the crystalline silicon of non-passivation, PID phenomenon can be effectively reduced, and luminous energy can be improved specially change efficiency.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
Each embodiment in this specification all adopts relevant mode to describe, between each embodiment identical similar part mutually see, what each embodiment stressed is the difference with other embodiments.Especially, for device embodiment, because it is substantially similar to embodiment of the method, so description is fairly simple, relevant part illustrates see the part of embodiment of the method.
The foregoing is only preferred embodiment of the present invention, be not intended to limit protection scope of the present invention.All any amendments done within the spirit and principles in the present invention, equivalent replacement, improvement etc., be all included in protection scope of the present invention.
Claims (17)
1., for carrying out an equipment for passivation to crystalline silicon, comprise passivation unit and transmission unit, it is characterized in that,
Described passivation unit comprises: body of heater, and described body of heater side is provided with the first charging aperture, and opposite side is provided with the first discharging opening; The endoceliac bottom of described stove is provided with transparent chamber, the side of described transparent chamber is provided with the second charging aperture, opposite side is provided with the second discharging opening, described transparent chamber is connected with air inlet pipe, and the gas outlet end of described air inlet pipe is positioned at described transparent chamber chamber interior, the gas access end of described air inlet pipe is positioned at outside described body of heater; Heater and ultraviolet source is provided with in described body of heater chamber;
Described transmission unit comprises transmission belt, and described transmission belt enters transparent chamber by described first charging aperture and described second charging aperture successively, and leaves body of heater by described second discharging opening and described first discharging opening successively.
2. equipment as claimed in claim 1, it is characterized in that, described body of heater upper wall is provided with air exhausting device, and described air exhausting device bottom is provided with exhaust hood, and described exhaust hood is positioned at described body of heater chamber, and described ultraviolet source is positioned at described exhaust hood.
3. equipment as claimed in claim 1, is characterized in that, outside described body of heater, be provided with cooling device above the first discharging opening.
4. as the equipment in claim 1-3 as described in any one, it is characterized in that, be provided with gas distribution pipe bottom described transparent chamber indoor, described gas distribution pipe is with pore, and the gas inlet end of described gas distribution pipe is connected with the gas outlet end of described air inlet pipe.
5. as the equipment in claim 1-3 as described in any one, it is characterized in that, described transmission unit also comprises drive adjusting device, for regulating the tightness of described transmission belt, described drive adjusting device comprises: support, dancer rools, plain bearing housing, stop screw and spring, the same position of described support both sides is respectively arranged with stopper slot, is respectively arranged with plain bearing housing in described stopper slot, and described plain bearing housing by described stop screw laminating on the bracket; Described dancer rools is arranged on the bearing of described plain bearing housing; The two ends of described spring are individually fixed in described plain bearing housing and described support, slide in described stopper slot to make described plain bearing housing.
6. as the equipment in claim 1-3 as described in any one, described transmission unit also comprises: live-roller and driven roller, described live-roller and driven roller rotate for driving described transmission belt, it is characterized in that, described live-roller and driven roller two ends are less than the diameter of section of center perpendicular to axis perpendicular to the diameter of section of axis.
7. as the equipment in claim 1-3 as described in any one, it is characterized in that, the material of described transparent chamber is quartz or glass.
8. as the equipment in claim 1-3 as described in any one, it is characterized in that, described body of heater comprises detachable upper furnace body and lower furnace body.
9. as the equipment in claim 1-3 as described in any one, it is characterized in that, described transparent chamber comprises transparent cavity and transparent cover plate.
10. as the equipment in claim 1-3 as described in any one, it is characterized in that, described heater is heat lamp or resistance heater.
11., as the equipment in claim 1-3 as described in any one, is characterized in that, the ultraviolet wave-length coverage that described ultraviolet source sends is 150-250nm.
12., as the equipment in claim 1-3 as described in any one, is characterized in that, the ultraviolet wave-length coverage that described ultraviolet source sends is 180-220nm.
13. 1 kinds of application rights require that the equipment described in 1 carries out the method for passivation to crystalline silicon, it is characterized in that, comprising:
Crystalline silicon after etching is sent into transparent chamber by transmission belt, and described transparent chamber indoor pass into oxygen by air inlet pipe;
By the first temperature threshold that the crystalline silicon of transparent chamber indoor is extremely preset by heating devices heat;
The ultraviolet source being preset at transparent chamber outdoor is utilized to carry out Ultraviolet radiation 5 ~ 150 seconds to the crystalline silicon being heated to the first temperature threshold, the oxygen of transparent chamber chamber interior is made to form ozone, ozone makes the surface of crystalline silicon generation oxidation reaction of transparent chamber indoor, generates passivation layer;
The crystalline silicon generating passivation layer is shifted out body of heater by transmission belt.
14. methods as claimed in claim 13, it is characterized in that, described equipment also comprises cooling device, and described cooling device to be positioned at outside described body of heater and above the first discharging opening;
After the described crystalline silicon by generation passivation layer shifts out body of heater by transmission belt, described method comprises further: under the effect of described cooling device, be cooled to the second temperature threshold.
15. methods as claimed in claim 13, is characterized in that, the scope of described first temperature threshold is 20-300 DEG C.
16. methods as claimed in claim 15, is characterized in that, the scope of described first temperature threshold is 80-250 DEG C.
17. methods as claimed in claim 13, is characterized in that, the scope of described second temperature threshold is 10-70 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410265331.8A CN105322046B (en) | 2014-06-13 | 2014-06-13 | A kind of device and method for being passivated to crystalline silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410265331.8A CN105322046B (en) | 2014-06-13 | 2014-06-13 | A kind of device and method for being passivated to crystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105322046A true CN105322046A (en) | 2016-02-10 |
| CN105322046B CN105322046B (en) | 2017-06-09 |
Family
ID=55249047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410265331.8A Expired - Fee Related CN105322046B (en) | 2014-06-13 | 2014-06-13 | A kind of device and method for being passivated to crystalline silicon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105322046B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN108054112A (en) * | 2017-12-21 | 2018-05-18 | 重庆超硅半导体有限公司 | A kind of IC grades of silicon wafer minority carrier lifetime method |
| CN108417474A (en) * | 2018-01-24 | 2018-08-17 | 锦州华昌光伏科技有限公司 | Crystalline silicon thermal oxidation technology, system and crystal silicon solar energy battery thermal oxidation technology |
| CN111509090A (en) * | 2020-05-08 | 2020-08-07 | 常州时创能源股份有限公司 | Battery edge passivation method |
| CN112864274A (en) * | 2020-12-31 | 2021-05-28 | 深圳市拉普拉斯能源技术有限公司 | Passivation equipment and passivation method |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442902B (en) * | 1999-02-08 | 2001-06-23 | Steag Rtp Systems Inc | Process for forming thin dielectric layers in semiconductor devices |
| CN1592958A (en) * | 2001-11-08 | 2005-03-09 | 株式会社明电舍 | Method and device for forming oxide film |
| WO2010066298A1 (en) * | 2008-12-11 | 2010-06-17 | Osram Gesellschaft mit beschränkter Haftung | Uv light having a plurality of uv lamps, particularly for technical product processing |
| CN201694598U (en) * | 2010-05-14 | 2011-01-05 | 东莞巨扬电器有限公司 | Conveying device provided with press plate |
| CN202089519U (en) * | 2011-05-31 | 2011-12-28 | 吴江迈为技术有限公司 | Device with flexible belts for conveying solar cells |
| CN202148015U (en) * | 2011-06-24 | 2012-02-22 | 无锡杰思物流设备有限公司 | Belt conveyer |
| US20130130434A1 (en) * | 2011-10-17 | 2013-05-23 | Osram Ag | Method for Producing a Photovoltaic Element Comprising a Silicon Dioxide Layer |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN103526183A (en) * | 2012-07-06 | 2014-01-22 | 东京毅力科创株式会社 | Film deposition apparatus, and method of depositing a film |
| CN203439577U (en) * | 2013-08-28 | 2014-02-19 | 深圳市海目星激光科技有限公司 | Flexible unit production line |
-
2014
- 2014-06-13 CN CN201410265331.8A patent/CN105322046B/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW442902B (en) * | 1999-02-08 | 2001-06-23 | Steag Rtp Systems Inc | Process for forming thin dielectric layers in semiconductor devices |
| CN1592958A (en) * | 2001-11-08 | 2005-03-09 | 株式会社明电舍 | Method and device for forming oxide film |
| WO2010066298A1 (en) * | 2008-12-11 | 2010-06-17 | Osram Gesellschaft mit beschränkter Haftung | Uv light having a plurality of uv lamps, particularly for technical product processing |
| CN201694598U (en) * | 2010-05-14 | 2011-01-05 | 东莞巨扬电器有限公司 | Conveying device provided with press plate |
| CN202089519U (en) * | 2011-05-31 | 2011-12-28 | 吴江迈为技术有限公司 | Device with flexible belts for conveying solar cells |
| CN202148015U (en) * | 2011-06-24 | 2012-02-22 | 无锡杰思物流设备有限公司 | Belt conveyer |
| US20130130434A1 (en) * | 2011-10-17 | 2013-05-23 | Osram Ag | Method for Producing a Photovoltaic Element Comprising a Silicon Dioxide Layer |
| CN103526183A (en) * | 2012-07-06 | 2014-01-22 | 东京毅力科创株式会社 | Film deposition apparatus, and method of depositing a film |
| CN103311372A (en) * | 2013-06-18 | 2013-09-18 | 常州时创能源科技有限公司 | Crystalline silicon oxidation treatment apparatus for passivation of solar cells |
| CN203439577U (en) * | 2013-08-28 | 2014-02-19 | 深圳市海目星激光科技有限公司 | Flexible unit production line |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105839194A (en) * | 2016-05-20 | 2016-08-10 | 苏州中世太新能源科技有限公司 | Passivation gas spraying assembly for silicon wafer surface of photovoltaic cell and gas passivation equipment |
| CN108054112A (en) * | 2017-12-21 | 2018-05-18 | 重庆超硅半导体有限公司 | A kind of IC grades of silicon wafer minority carrier lifetime method |
| CN108054112B (en) * | 2017-12-21 | 2021-11-30 | 重庆超硅半导体有限公司 | Method for testing minority carrier lifetime of IC-level silicon wafer |
| CN108417474A (en) * | 2018-01-24 | 2018-08-17 | 锦州华昌光伏科技有限公司 | Crystalline silicon thermal oxidation technology, system and crystal silicon solar energy battery thermal oxidation technology |
| CN108417474B (en) * | 2018-01-24 | 2021-12-21 | 锦州阳光能源有限公司 | Crystalline silicon thermal oxidation process and system and crystalline silicon solar cell thermal oxidation process |
| CN111509090A (en) * | 2020-05-08 | 2020-08-07 | 常州时创能源股份有限公司 | Battery edge passivation method |
| CN111509090B (en) * | 2020-05-08 | 2022-05-31 | 常州时创能源股份有限公司 | Battery edge passivation method |
| CN112864274A (en) * | 2020-12-31 | 2021-05-28 | 深圳市拉普拉斯能源技术有限公司 | Passivation equipment and passivation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322046B (en) | 2017-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105322046A (en) | Equipment and method for passivating silicon crystal | |
| CN104505427B (en) | Improve method and the device of crystal silicon solar cell sheet LID and PID | |
| US8998606B2 (en) | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices | |
| CN102860122A (en) | Coating film drying furnace | |
| CN103896283B (en) | A kind of manufacture method of SiO powder and manufacturing installation | |
| WO2012171149A1 (en) | Polysilicon reducing furnace | |
| CN205398771U (en) | Silicon chip diffusion furnace for solar cell | |
| ES2823765T3 (en) | Device and procedure for the heat treatment of several multilayer bodies | |
| CN107032442B (en) | Solar energy utilization system integrating photovoltaic power generation and photocatalytic water purification | |
| CN204558429U (en) | A kind of device reducing photo attenuation | |
| CN202543323U (en) | Low pressure chemical vapor deposition (LPCVD) preheating cavity temperature control system | |
| CN103311372A (en) | Crystalline silicon oxidation treatment apparatus for passivation of solar cells | |
| CN203325957U (en) | Crystalline silicon oxidation processing device for solar energy cell sheet passivation | |
| CN101697295A (en) | Method and equipment for utilizing catalytic heat energy by microwire enamelling machine | |
| CN206711913U (en) | The solar cell radiation annealing stove of uniform high-efficiency annealing | |
| CN101245450A (en) | Method for film coating in enormous quantities with movable plasma case single-chamber | |
| TWI538242B (en) | Apparatus for manufacture of solar cells | |
| CN107204389A (en) | A kind of quick light decay device of silicon solar cell using LED as light source | |
| CN102538453A (en) | Rapid thermal roasting infrared conveyor belt type thermal treatment furnace having high-reflectivity heating section | |
| CN208460804U (en) | Using LED as the quick preparation device of the perovskite solar battery of light source | |
| CN209685956U (en) | Lamp box apparatus, attemperator and annealing furnace apparatus | |
| CN215152916U (en) | Can improve drying cabinet of solar cell powder falling electric leakage | |
| CN205862883U (en) | LED ultraviolet light irradiation cable crosslinking apparatus | |
| CN201396610Y (en) | Sunlight model test box provided with improved xenon lamp cooling system | |
| CN202465869U (en) | Thin-film deposition device with heating medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170609 Termination date: 20210613 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |