CN102864436A - Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell - Google Patents
Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell Download PDFInfo
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- CN102864436A CN102864436A CN2011101880062A CN201110188006A CN102864436A CN 102864436 A CN102864436 A CN 102864436A CN 2011101880062 A CN2011101880062 A CN 2011101880062A CN 201110188006 A CN201110188006 A CN 201110188006A CN 102864436 A CN102864436 A CN 102864436A
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- reflecting film
- antireflective film
- solar cell
- silicon solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention belongs to the technical field of crystalline silicon solar cells and particularly relates to an improved method for preparing a silicon nitride anti-reflecting film of a crystalline silicon solar cell. In a traditional preparation method, the SiNx anti-reflecting film is prepared by means of a plasma enhanced chemical vapor deposition (PECVD) method, the compactness and the uniformity of the SiNx anti-reflecting film are poor due to high deposition rate, and the passivation effect and the anti-reflecting effect are not the best. The method uses SiH4 and NH3 as main reaction gas, N2 serving as a dispersing agent and side reaction gas is slowly and evenly fed in the deposition process, and the SiNx anti-reflecting film is prepared by means of the PECVD method. The silicon nitride anti-reflecting film prepared by means of the method is even, good in compactness and good in passivation effect and anti-reflecting effect. Compared with a traditional process without using the N2, the SiNx anti-reflecting film prepared by means of the method can effectively improve photoelectric conversion efficiency of the crystalline silicon solar cell by 0.2%.
Description
Technical field
The invention relates to solar photoelectric and utilize crystal silicon solar batteries technology in the field, be specifically related to a kind of preparation method of solar cell antireflective film of improvement.
Background technology
Along with development economic and society, the own serious challenge that faces through becoming universe's survival and development of energy dilemma and environmental pollution.In recent years, the crystal silicon solar batteries development had become one of most important approach of human use's sun power rapidly.
In solar cell manufacturing process, the making of antireflective film is most important.Present stage, antireflective film mainly contained TiO
2, SiO
2, SiN
xThree kinds, TiO wherein
2Specific refractory power is 2.4, has preferably anti-reflective effect for crystal silicon solar battery, but TiO
2There is not the hydrogen passivation; SiO
2Have good passivation effect, but its specific refractory power (1.46) is lower, anti-reflective effect is bad, and SiO
2The preparation of antireflective film needs high-temperature oxidation process, has increased production cost, and is also influential to the minority carrier life time of silicon chip; SiN
xNot only have good anti-reflective effect but also have good passivation and chemical stability, can effectively improve the photoelectric transformation efficiency of solar cell.
SiN with traditional preparation technology's preparation
xThe antireflective film stable chemical nature has good provide protection to silicon chip, and the measured silicon nitride anti-reflection film of matter can be down to 10% after by the making herbs into wool of the surface albedo of silicon chip about 3%.Because silicon nitride anti-reflection film is accompanied by H in the process that forms
2Generation, can carry out the hydrogen passivation to the unsaturation dangling bonds of silicon chip surface, thereby improve minority carrier life time, in recent years, silicon nitride is used widely as antireflective film.Present photovoltaic industry deposit SiN
xAntireflective film basically using plasma strengthens chemical Vapor deposition process (PECVD).But traditional preparation method is because its higher sedimentation rate has caused SiN
xCompactness relatively poor, it is best that passivation effect and anti-reflection effect all can not reach.
As mentioned above, the silicon nitride anti-reflection film stable chemical nature, free energy is low, can effectively protect silicon chip.Compare titanium oxide, the H that silicon nitride anti-reflection film generates in process of growth
2Can carry out the hydrogen passivation to the unsaturated dangling bonds of silicon chip surface, the Effective Raise minority carrier life time.The advantages such as compare LPCVD, it is low that the PECVD technology has a deposition temperature, less on the minority carrier life time impact, and deposition speed is fast.N among the present invention
2As the absorption of dispersion agent and side reaction agent, the deposition rate that has reduced silicon nitride anti-reflection film makes the thin antireflective film of silicon nitride have better compactness, and the N-H key that has strengthened has increased solar cell to sun Optical Absorption.
Summary of the invention
The objective of the invention is: prepare the deficiency that silicon nitride anti-reflection film technique exists for present PECVD, propose a kind of preparation method of crystal silicon solar batteries antireflective film of improvement.Pass through N
2As the absorption of dispersion agent, because the deposit rate of film build descends, the compactness of antireflective film is improved; Secondly because N2 strengthened the N-H key, thereby increased solar cell to sun Optical Absorption as the absorption of side reaction gas, thereby improve the photoelectric transformation efficiency of solar cell.
Technical scheme of the present invention is: by slowly evenly taking in N2 as dispersion agent and side reaction gas in deposition process, the PECVD production technique that has now is optimized and improves.A kind of crystal silicon solar batteries SiN of improvement
xThe preparation method of antireflective film is characterized in that: with SiH
4, NH
3Be principal reaction gas, and in deposition process, slowly evenly be filled with certain proportion N
2As dispersion agent and side reaction gas, under 400 ~ 500 ℃ underlayer temperature, with plasma enhanced chemical vapor deposition method (PECVD), to prepare more evenly, compactness is better, and passivation effect is good, the SiN that anti-reflection is effective
xAntireflective film can Effective Raise solar cell photoelectric transformation efficiency 0.1% ~ 0.2%.
Concrete preparation method is: be 40KHz at rf frequency, radio frequency power is under the condition of 4500W, passes into NH
3: SiH
4: N
2=1:6～8:1～2(is NH
3, SiH
4, N
2Throughput ratio is 1:6～8:1～2), keep 100～200pa constant voltage in the cavity, temperature of reaction is 400～500 ℃, with plasma enhanced chemical vapor deposition method (PECVD) preparation SiN
xAntireflective film.
Characteristics of the present invention
1. the SiN for preparing by this method
xAntireflective film is compared traditional preparation method's homogeneity and compactness and all is improved;
2. the SiN for preparing by this method
xAntireflective film is because the enhancing of N-H key has improved solar cell to sun Optical Absorption.
3. the SiN for preparing by the method
xAntireflective film can Effective Raise solar cell photoelectric efficiency of conversion 0.1% ~ 0.2%.
Description of drawings
Fig. 1 does not take in N
2The spectral absorption figure of the silicon nitride anti-reflection film of preparing
Fig. 2 takes in N
2The spectral absorption figure of the silicon nitride anti-reflection film of preparing
Fig. 3 is monocrystaline silicon solar cell sheet picture
Fig. 4 is the polysilicon solar battery slice picture
Fig. 5 the has been deposit polysilicon chip picture of silicon nitride anti-reflection film
Embodiment
Selecting resistivity is 0.5 ~ 6, and crystal face is the former silicon chip of the polysilicon of (100), and the concrete technology engineering is as follows:
1. silicon chip pre-treatment:
(1) matting is removed the silicon chip surface damage, forms the antireflective corrosion pit;
(2) the liquid phosphorus source diffuses to form PN junction;
(3) plasma etching is removed the silicon chip edge PN junction;
(4) secondary cleaning is removed the silicon chip surface phosphorosilicate glass;
2. with plasma enhanced chemical vapor deposition method (PECVD) deposit SiN
xAntireflective film, the coating process process is:
Boiler tube is heated to certain temperature, the graphite boat of filling silicon chip is placed boiler tube, be heated to preset temp, cavity is evacuated to vacuum state, pass into the NH of certain flow
3Silicon chip is carried out predeposition in 3 minutes, pass into NH by the flow proportional of setting
3, SiH
4And N
2, adjust the evacuating valve aperture, the pressure of adjusting in the cavity arrives preset value, adjusts discharge frequency and the power of radio-frequency power supply, the control deposition time, it is strong to obtain compactness, and passivation effect is good, the SiN that anti-reflection is effective
xAntireflective film.Concrete technology parameter wherein:
Furnace tube temperature: 300 ℃～500 ℃
Deposit radio frequency power: 3000W～5000W
NH
3, SiH
4, N
2Flow: 700:4000:700 ~ 1400
NH
3, SiH
4, N
2Throughput ratio: 1:5～8:1～2
Cavity internal pressure: 100～300Pa
Deposition time: 600 seconds～900 seconds
3. the silk screen printing back electrode is dried.Then, silk screen printing back of the body electric field, oven dry.At last, silk screen printing positive electrode, sintering.
Claims (3)
1. the crystal silicon solar batteries antireflective film preparation method of an improvement is characterized in that adopting the crystalline silicon raw material, pass through successively cleaning and texturing, diffusion, plasma etching, dephosphorization silex glass after, with plasma enhanced chemical vapor deposition method (PECVD), with SiH
4, NH
3Be principal reaction gas, and in deposition process, slowly evenly be filled with quantitative N
2As dispersion agent and side reaction gas.
2. the SiN for preparing with the method in the right 1
XAntireflective film is even, and compactness is good, and passivation effect is good.
3. the SiN for preparing with the method in the right 1
XThe electricity conversion 0.1 ~ 0.2% of antireflective film energy Effective Raise solar cell
A kind of crystal silicon solar batteries antireflective film preparation method of improvement, its preparation method is: be 40KHz at rf frequency, radio frequency power is under the condition of 4500W, passes into NH
3: SiH
4: N
2=1:6～8:1～2(is NH
3, SiH
4, N
2Throughput ratio is 1:6～8:1～2), keep 100～300Pa constant voltage in the cavity, temperature of reaction is 300 ℃～500 ℃, with plasma enhanced chemical vapor deposition method (PECVD) preparation SiN
xAntireflective film.
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|---|---|---|---|
| CN2011101880062A CN102864436A (en) | 2011-07-06 | 2011-07-06 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
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|---|---|---|---|
| CN2011101880062A CN102864436A (en) | 2011-07-06 | 2011-07-06 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103320855A (en) * | 2013-05-27 | 2013-09-25 | 上海宏力半导体制造有限公司 | Polysilicon thin layer deposition method |
| CN103602961A (en) * | 2013-11-26 | 2014-02-26 | 晶澳太阳能有限公司 | Coating method of crystalline silicon solar battery with high parallel resistance |
| CN107086250A (en) * | 2017-05-11 | 2017-08-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of method that use PECVD platings set antireflective film |
| CN109473508A (en) * | 2018-12-25 | 2019-03-15 | 浙江晶科能源有限公司 | A kind of solar battery method for annealing and device and preparation method of solar battery |
-
2011
- 2011-07-06 CN CN2011101880062A patent/CN102864436A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103320855A (en) * | 2013-05-27 | 2013-09-25 | 上海宏力半导体制造有限公司 | Polysilicon thin layer deposition method |
| CN103320855B (en) * | 2013-05-27 | 2016-08-10 | 上海华虹宏力半导体制造有限公司 | Polysilicon thin layer deposition |
| CN103602961A (en) * | 2013-11-26 | 2014-02-26 | 晶澳太阳能有限公司 | Coating method of crystalline silicon solar battery with high parallel resistance |
| CN103602961B (en) * | 2013-11-26 | 2015-12-09 | 晶澳太阳能有限公司 | A kind of film coating method with the crystal silicon solar energy battery of high shunting resistance |
| CN107086250A (en) * | 2017-05-11 | 2017-08-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of method that use PECVD platings set antireflective film |
| CN107086250B (en) * | 2017-05-11 | 2019-06-14 | 苏州阿特斯阳光电力科技有限公司 | A method of antireflective film is set using PECVD plating |
| CN109473508A (en) * | 2018-12-25 | 2019-03-15 | 浙江晶科能源有限公司 | A kind of solar battery method for annealing and device and preparation method of solar battery |
| CN109473508B (en) * | 2018-12-25 | 2023-08-25 | 浙江晶科能源有限公司 | Solar cell annealing method and device and solar cell preparation method |
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Application publication date: 20130109 |