CN103320855B - Polysilicon thin layer deposition - Google Patents
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Abstract
A kind of Polysilicon thin layer deposition, including: providing substrate, same described substrate surface is formed with different material layer, and each material layer is positioned at zones of different, or, substrate surface described at least two is formed with different material layers；Reaction chamber is put in described substrate；In described reaction chamber, it is passed through pre-deposited gas, carries out pre-deposited, form the first layer polysilicon film on the substrate；Wherein said pre-deposited gas includes that diluent gas and silicon-containing gas, the volume ratio of described silicon-containing gas are 1% 50%, and the flow velocity of described pre-deposited gas is 100 1000sccm；Being passed through main deposited gas in described reaction chamber, carry out main deposit, form the second layer polysilicon film on described first layer polysilicon film, described main deposited gas is silicon-containing gas or includes silicon-containing gas and diluent gas.By this Polysilicon thin layer deposition, the layer polysilicon film that thickness is accurate and thickness is homogeneous can be obtained.
Description
Technical field
The present invention relates to semiconductor applications, be related specifically to a kind of Polysilicon thin layer deposition.
Background technology
Along with improving constantly of semiconductor device performance requirements, the manufacture difficulty of quasiconductor also continues to increase.Existing
Have in technology, form thin film by depositing technics in substrate surface growth, complete circuit with film technique
Processing.Along with the requirement of performance of semiconductor device is improved constantly, the thin film formed at substrate surface
The homogeneity of thickness and thickness all has strict requirements.
Polysilicon is one of very important material layer in semiconductor integrated circuit, is commonly used to prepare grid etc.
Device.Polysilicon film generally uses LPCVD(low-pressure chemical vapor deposition) method deposit, utilize SiH4(silicon
Alkane) gas is passed through reaction chamber as source of the gas, and by thermally decomposing to generate polysilicon, described polysilicon is deposited to
Layer polysilicon film is formed in substrate.
In the reactor chamber, SiH4Gas flows through substrate, and deposits on upper surface of substrate and lower surface.
Upper and lower surface zones of different in same substrate is formed with polysilicon material layer, silicon nitride material
The bed of material or silica material layer.
With reference to Fig. 1, in the zones of different on surface, form polysilicon material layer 2, silicon nitride material on the base 1
Layer 3 and silica material layer 4.In described substrate 1 during depositing polysilicon, deposit the forming core stage starting,
The polysilicon of deposit has forming core selectivity, i.e. forming core speed on different material layer on different material layer
Different.Specifically, SiH4When gas flows through substrate 1, the polysilicon thermally decomposed to generate is at polycrystalline silicon material
The forming core speed on layer 2 and silicon nitride material 3 surface is more than the forming core speed on silica material layer 4 surface.
With reference to Fig. 2, owing to substrate surface defines different material layers, cause depositing the incipient stage, different
The polysilicon membrane layer thickness of material surface deposit is different, at the material layer table that polysilicon forming core speed is big
The thickness of the first layer polysilicon film 5 that face, i.e. polysilicon material layer 2 and silicon nitride material 3 surface is formed
Greatly；More than first formed in the material surface that polysilicon forming core speed is little, i.e. silica material layer 4 surface
The thickness of layer polycrystal silicon film 5 ' is little.In practical situations both, the first layer polysilicon film 5 and the first polysilicon are thin
Without boundary line between film layer 5 ', for convenience of description, it is separated by Fig. 2 by boundary line.Tightened up says, polycrystalline
Silicon is the most different, at polycrystalline silicon material in the forming core speed of polysilicon material layer 2 and silicon nitride material 3 surface
The thickness of the first layer polysilicon film 5 on layer 2 and silicon nitride material 3 is the most variant.
With reference to Fig. 3, after substrate 1 surface all deposited one layer of layer polysilicon film, at this layer of polysilicon membrane
On layer again depositing polysilicon time, the deposition rate of polysilicon is by identical, at polysilicon material layer 2 and silicon nitride
The thickness of the second layer polysilicon film 6 formed above material layer 3 and formation above silica material layer 4
The thickness of the second layer polysilicon film 6 ' identical.In practical situations both, the second layer polysilicon film 6 and
Without boundary line between two layer polysilicon films 6 ', for convenience of description, it is separated by Fig. 3 by boundary line.
After completing deposit, the thickness of the layer polysilicon film material that polysilicon forming core speed is big when deposit starts
The polysilicon membrane layer thickness that layer surface is formed is still big, and polysilicon forming core speed is little when deposit starts
Material surface formed polysilicon membrane layer thickness the least.Ultimately result in different materials in same substrate
The polysilicon membrane layer thickness on bed of material surface is different.
Fig. 1 to Fig. 3 only describes when forming different material layer in same substrate surface zones of different, and deposit is many
The situation of layer polycrystal silicon film.In other cases, it is also possible on different substrates due to substrate surface shape
Become different material layers, and it is different to cause putting into formation thickness in the same a collection of substrate of same reaction chamber
Layer polysilicon film.
If the thickness depositing the layer polysilicon film of formation in substrate is the least, even if the described polysilicon formed is thin
The difference in thickness of film layer is the least, and this species diversity also seems clearly.Layer polysilicon film caliper uniformity
Can not be controlled effectively, finally affect the performance of semiconductor device.
Summary of the invention
The problem that the present invention solves is in prior art, the layer polysilicon film caliper uniformity that deposit is formed
It is difficult to control to, and then affects the performance of semiconductor device.
For solving the problems referred to above, the present invention provides a kind of Polysilicon thin layer deposition, including: provide
Substrate, same described substrate surface is formed with different material layer, and each material layer is positioned at zones of different, or,
Substrate surface described at least two is formed with different material layers；Reaction chamber is put in described substrate；Toward institute
It is passed through pre-deposited gas in stating reaction chamber, carries out pre-deposited, form the first polysilicon on the substrate thin
Film layer；Wherein said pre-deposited gas includes diluent gas and silicon-containing gas, the volume of described silicon-containing gas
Ratio is 1%-50%, and the flow velocity of described pre-deposited gas is 100-1000sccm；It is passed through in described reaction chamber
Main deposited gas, carries out main deposit, forms the second polysilicon membrane on described first layer polysilicon film
Layer, described main deposited gas is silicon-containing gas or includes silicon-containing gas and diluent gas.
Optionally, in described pre-deposited gas, the volume ratio of silicon-containing gas is 20%-30%, described pre-deposited
The flow velocity of gas is 300-500sccm.
Optionally, when carrying out pre-deposited, the temperature in described reaction chamber is more than 570 DEG C, and pressure is more than
0.3Torr。
Optionally, described silicon-containing gas is SiH4Or tetraethyl orthosilicate.
Optionally, described diluent gas is N2, one or more in Ar, He.
Optionally, the response time of described pre-deposited is 0.1-10.0min.
Optionally, described main deposited gas is silicon-containing gas or includes silicon-containing gas and diluent gas.
Optionally, the flow velocity of main deposited gas is 100-1000sccm.
Optionally, when carrying out main deposit, the temperature in described reaction chamber is more than 570 DEG C, and pressure is more than
0.3Torr。
Optionally, when carrying out main deposit, temperature in described reaction chamber and pressure are equal to when carrying out pre-deposited
Temperature in reaction chamber and pressure.
Optionally, the material of described material layer is silicon oxide, silicon nitride or polysilicon.
Compared with prior art, technical scheme has the advantage that
In the prior art, pre-deposited gas is silicon-containing gas, and is not mixed into dilution in silicon-containing gas
Gas, and the flow velocity of silicon-containing gas is relatively big, so the speed of pre-deposited is the biggest.Deposit forming core starting
In the stage, the polysilicon of deposit has forming core selectivity, i.e. shape on different material layer on different material layer
Core speed is different.When substrate surface zones of different is formed with different material layer, can cause at different materials
The polysilicon layer thicknesses formed on layer is different.In this programme, first pass through pre-deposited technique at substrate surface
Form the first layer polysilicon film, owing in the pre-deposited gas of pre-deposited the volume fraction of silicon-containing gas is relatively
Little (1%-50%), and the flow of pre-deposited gas the least (100-1000sccm) so that pre-deposited
Deposition rate the least.The deposition rate of pre-deposited is the least can be reduced when pre-deposited starts due to polysilicon
The difference in thickness that forming core selectivity brings, obtains the first layer polysilicon film that thickness is homogeneous.Carry out subsequently
Main depositing technics, first layer polysilicon film homogeneous owing to having defined a layer thickness in substrate,
During main deposit, polysilicon is formed on described first layer polysilicon film, and the polysilicon of deposit is the most tangible
The selective difference of core, the second polysilicon membrane layer thickness of formation is homogeneous, solves prior art deposit
The layer polysilicon film caliper uniformity formed is difficult to control to, and then affects a difficult problem for performance of semiconductor device.
Accompanying drawing explanation
Fig. 1 to Fig. 3 is the cross-sectional view of Polysilicon thin layer deposition in prior art；
Fig. 4 is the schematic flow sheet of the Polysilicon thin layer deposition of first embodiment of the invention；
Fig. 5 to Fig. 7 is that the cross-section structure of the Polysilicon thin layer deposition of first embodiment of the invention shows
It is intended to；
Fig. 8 to Figure 10 is that the cross-section structure of the Polysilicon thin layer deposition of second embodiment of the invention shows
It is intended to.
Detailed description of the invention
In prior art, owing to being formed with different material layer in substrate surface zones of different, in deposit
During layer polysilicon film, because polysilicon forming core has forming core selectivity on different material layer, cause deposit
The layer polysilicon film caliper uniformity formed is difficult to control to, and affects the performance of semiconductor device.For understanding
Certainly this problem, the invention provides a kind of Polysilicon thin layer deposition, can obtain thickness homogeneous
Layer polysilicon film.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
The specific embodiment of the present invention is described in detail.
First embodiment
With reference to Fig. 4, the Polysilicon thin layer deposition of first embodiment includes:
Step S1: providing substrate, same described substrate surface is formed with different material layer, each material layer position
In zones of different；
Step S2: reaction chamber is put in described substrate；
Step S3: be passed through pre-deposited gas in described reaction chamber, carries out pre-deposited, on the substrate
Form the first layer polysilicon film；
Step S4: be passed through main deposited gas in described reaction chamber, carry out main deposit, described more than first
The second layer polysilicon film is formed on layer polycrystal silicon film.
The deposit of first embodiment of the invention layer polysilicon film is described in detail below in conjunction with cross-sectional view
Method.
With reference to Fig. 5, it is provided that substrate 101, described substrate 101 surface is formed with different material layer, each material
Layer is positioned at zones of different；Reaction chamber (not shown) is put in described substrate 101.
Same described substrate 101 surface is formed with different material layer, and each material layer is positioned at zones of different and includes
The most various situations: when surface described in first is upper surface or the lower surface of same substrate 101, described table
Face at least two zoness of different, described zones of different is formed with different material layer.Second, described same
One substrate 101 surface can also be that, including upper and lower surface, upper surface is formed with different material layer,
Each material layer is positioned at zones of different, or a kind of material layer of upper surface；Lower surface is formed with different materials
Layer, each material layer is positioned at zones of different, or a kind of material layer of lower surface；3rd, when substrate 101
Upper and lower surface when all only forming a kind of material layer, the material layer formed at described upper surface and
The material layer that lower surface is formed is different.
In a particular embodiment, the material of described material layer is silicon oxide, silicon nitride or polysilicon, it is possible to
Think other materials known in the art.
In a particular embodiment, substrate 101 as shown in Figure 5, described substrate 101 upper surface has three not
Same region, described zones of different is respectively formed with polysilicon material layer 102, silicon nitride material 103 and
Silica material layer 104.
In a particular embodiment, the material layer of described substrate 101 can be silicon, SiGe, silicon-on-insulator
Conventional semi-conducting materials such as (silicon on insulator are called for short SOI).
With reference to Fig. 6, in described reaction chamber, it is passed through pre-deposited gas, carries out pre-deposited, in described substrate
The first layer polysilicon film 105 is formed on 101.
Wherein said pre-deposited gas contains diluent gas and silicon-containing gas, the volume ratio of described silicon-containing gas
For 1%-50%, and the flow velocity of described pre-deposited gas is that 100-1000sccm(marks condition milliliter every point).Can
To select, in described pre-deposited gas, the volume ratio of silicon-containing gas is 20%-30%, described pre-deposited gas
Flow velocity be 300-500sccm.
The flow velocity of described pre-deposited gas is 100-1000sccm, refers to the total of diluent gas and silicon-containing gas
Flow velocity is 100-1000sccm.Diluent gas and silicon-containing gas by different gas pipelines be passed through described instead
Intracavity, the flow velocity of described pre-deposited gas is answered to be the summation of gas flow rate in each breather line.The dilutest
The flow velocity of outgassing body and the flow velocity of silicon-containing gas should be able to meet makes silicon-containing gas volume account for pre-deposited gas volume
The 1%-50% of ratio.
In other embodiments, can first diluent gas and silicon-containing gas be mixed the most by volume, so
After be passed through again in described reaction chamber.
The volume of described reaction chamber is general the biggest, generally placed a lot of substrate 101 in reaction chamber, in order to
All substrates 101 are carried out polysilicon layer depositing technics simultaneously.If silicon-containing gas and impurity gas are by one
Individual breather valve is passed through reaction chamber, silicon-containing gas and impurity gas and is difficult to be uniformly dispersed in reaction chamber, deposit
After be difficult to make to obtain in different base 101 polysilicon layer that thickness is homogeneous.Therefore, described reaction chamber has
It is arranged at the top vent valve at reaction chamber top, is arranged at the middle part breather valve in the middle part of reaction chamber and is arranged at
Bottom ventilation valve bottom reaction chamber.
Described pre-deposited gas is passed through described by top vent valve, middle part breather valve and bottom ventilation valve simultaneously
Reaction chamber.In a particular embodiment, the flow velocity that pre-deposited gas is passed through reaction chamber by top vent valve is
35-350sccm, middle part breather valve the flow velocity being passed through reaction chamber is 35-350sccm, by bottom ventilation valve
The flow velocity being passed through reaction chamber is 30-300sccm.
Described pre-deposited gas is passed through described reaction by top vent valve, middle part breather valve and bottom ventilation valve
Chamber, is conducive to making described pre-deposited gas be distributed homogeneous in reaction chamber, makes gas everywhere in reaction chamber
Concentration is identical, contributes to obtaining the first layer polysilicon film that thickness is accurate and homogeneous.
In a particular embodiment, described silicon-containing gas is SiH4Or tetraethyl orthosilicate or known in the art
Other silicon-containing gas.When carrying out pre-deposited, when the temperature in described reaction chamber is more than 570 DEG C, described
After silicon-containing gas is passed through reaction chamber, decomposes and generate polysilicon；Pressure in described reaction chamber is more than 0.3Torr.
In a particular embodiment, described diluent gas is N2, one or more in Ar, He, or be this
Other diluent gas known to field.
In a particular embodiment, the response time of described pre-deposited is 0.1-10.0min.Described pre-deposited
Response time can select 1.0min.
In the prior art, pre-deposited gas is silicon-containing gas, and is not mixed into dilution in silicon-containing gas
Gas, and the flow velocity of silicon-containing gas is relatively big, so the speed of pre-deposited is the biggest.Deposit forming core starting
In the stage, the polysilicon of deposit has forming core selectivity, i.e. shape on different material layer on different material layer
Core speed is different.When substrate surface zones of different is formed with different material layer, can cause at different materials
The polysilicon layer thicknesses formed on layer is different.In the technical program, by pre-deposited technique in substrate 101
Surface forms the first layer polysilicon film 105, due to the volume of silicon-containing gas in the pre-deposited gas of pre-deposited
Mark is less, and the flow of pre-deposited gas is the least so that the deposition rate of pre-deposited is the least.In advance
The deposition rate of deposit is the least can reduce the thickness brought when pre-deposited starts due to polysilicon forming core selectivity
Degree difference, obtains the first layer polysilicon film 105 that thickness is homogeneous.
Relative to prior art, if not carrying out pre-deposited, or the speed of pre-deposited is too fast, then many
The thickness of the first layer polysilicon film 105 formed on crystal silicon material layer 102 and silicon nitride material 103
Can be more than the thickness of the first layer polysilicon film 105 formed on silica material layer 104.Finally lead
Cause the polysilicon membrane uneven thickness one finally obtained, and then affect the performance of device.
With reference to Fig. 7, in described reaction chamber, it is passed through main deposited gas, carries out main deposit, described more than first
The second layer polysilicon film 106 is formed on layer polycrystal silicon film.
In a particular embodiment, described main deposited gas includes silicon-containing gas and diluent gas, it is also possible to only
There is silicon-containing gas.
In a particular embodiment, described silicon-containing gas is SiH4Or tetraethyl orthosilicate, or it is other this areas
Known silicon-containing gas.
In a particular embodiment, described diluent gas is N2, one or more in Ar or He, it is possible to
Think other diluent gas known in the art.
In a particular embodiment, the flow velocity of described main deposited gas is 100-1000sccm.Described main deposit
The flow velocity of gas is 100-1000sccm, refers to that diluent gas with the overall flow rate of silicon-containing gas is
100-1000sccm.If described main deposited gas may not include diluent gas, the flow velocity of described main deposited gas
For 100-1000sccm, refer to that the flow velocity of silicon-containing gas is 100-1000sccm.
In a particular embodiment, in order to keep the concordance of pre-deposited process and main deposition process technique, institute
The flow velocity stating main deposited gas is equal with the flow velocity of described pre-deposited gas.If the difficulty of adjusting process is very
Little, the flow velocity of main deposited gas can also be different with the flow velocity of pre-deposited gas.
In a particular embodiment, when carrying out main deposit, the temperature in described reaction chamber is more than 570 DEG C, pressure
More than 0.3Torr.In order to keep the concordance of pre-deposited process and main deposition process technique, carry out main deposit
Time, temperature and pressure in described reaction chamber are equal to carry out the temperature in reaction chamber and pressure during pre-deposited.
If the difficulty of adjusting process is the least, when carrying out main deposit, temperature and pressure in described reaction chamber are permissible
It is not equal to carry out the temperature in reaction chamber and pressure during pre-deposited.
In a particular embodiment, described main deposited gas is led to by top vent valve, middle part breather valve and bottom
Air valve is passed through described reaction chamber, described main deposited gas can be made to be distributed homogeneous in reaction chamber, make reaction
Intracavity gas concentration everywhere is identical, is conducive to obtaining the second layer polysilicon film that thickness is accurate and homogeneous
106。
In a particular embodiment, the flow velocity that described main deposited gas is passed through reaction chamber by top vent valve is
35-350sccm, middle part breather valve the flow velocity being passed through reaction chamber is 35-350sccm, by lower curtate breather valve
The flow velocity being passed through reaction chamber is 30-300sccm.
Carry out main depositing technics, owing to having defined one layer of first layer polysilicon film 105 in substrate,
During main deposit, polysilicon is formed on the first layer polysilicon film 105, no longer has forming core the poorest
Different, the second layer polysilicon film 106 thickness of formation is homogeneous, will not be affected by deposition rate.?
In specific embodiment, it is possible to the main depositing technics using deposition rate big shortens process cycle, carries
High technology yield.
Second embodiment
Second embodiment is with the difference of first embodiment, and the different material layer in this enforcement is formed at not
Same substrate surface.
The volume of described reaction chamber is general the biggest, generally placed a lot of substrate, in order to right in reaction chamber
All substrates carry out polysilicon layer depositing technics simultaneously.
With reference to Fig. 8, it is provided that the first substrate 201 and the second substrate 201 ', described first substrate 201 and second
The surface of substrate 201 ' is formed with different material layers；By described first substrate 201 and the second substrate 201 '
Put into reaction chamber (not shown).
Wherein, described first substrate 201 and the second substrate 201 ' are with a collection of put into reaction chamber two
Substrate.
In a particular embodiment, with reference to Fig. 8, the upper surface of described first substrate 201 is formed with the first material
Layer 202, the upper surface of described second substrate 201 ' is formed with the second material layer 202 '.Described first material
The material of layer 202 is different from the material of described second material layer 202 '.
In other embodiments, the surface zones of different of described first substrate 201 could be formed with different material
The bed of material, the surface zones of different of described second substrate 201 ' can also be formed with different material layer.Specifically may be used
With with reference to the first specific embodiment.
In other embodiments, can there be the substrate of more than three, the not same district on described different base surface
Territory is formed with different material layer.
The material of substrate is referred to the first specific embodiment.
With reference to Fig. 9, in described reaction chamber, it is passed through pre-deposited gas, carries out pre-deposited, at described first base
The first layer polysilicon film 203 is formed, at described second substrate 201 ' upper formation the first polysilicon at the end 201
Thin layer 203 '.Wherein said pre-deposited gas contains diluent gas and silicon-containing gas, described silicon-containing gas
Volume ratio be 1%-50%, and the flow velocity of described pre-deposited gas is 100-1000sccm.
Concrete grammar is with reference to the correlation step in the first specific embodiment.This step can reduce due to polycrystalline
The first polycrystalline that silicon has forming core selectivity on the first material layer 202 and the second material layer 202 ' and causes
Difference in thickness between silicon membrane layer 203 and the first layer polysilicon film 203 '.
With reference to Figure 10, in described reaction chamber, it is passed through main deposited gas, carries out main deposit, described first
On layer polysilicon film, 203 form the second layer polysilicon film 204, on described first layer polysilicon film
203 ' form the second layer polysilicon film 204 '.
Concrete grammar is with reference to the correlation step in the first specific embodiment.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
The scope of protecting should be as the criterion with claim limited range.
Claims (11)
1. a Polysilicon thin layer deposition, it is characterised in that including:
Thering is provided substrate, same described substrate surface is formed with different material layer, and each material layer is positioned at not same district
Territory, or, substrate surface described at least two is formed with different material layers；
Reaction chamber is put in described substrate；
In described reaction chamber, it is passed through pre-deposited gas, carries out pre-deposited；Wherein said pre-deposited gas bag
Including diluent gas and silicon-containing gas, the volume ratio of described silicon-containing gas is 1%-50%, described pre-deposited gas
Flow velocity be 100-1000sccm, for reducing when deposit starts owing to polysilicon forming core selectivity brings
Difference in thickness, obtains the first layer polysilicon film that thickness is homogeneous on the substrate；
Being passed through main deposited gas in described reaction chamber, carry out main deposit, described main deposited gas is siliceous
Gas or include silicon-containing gas and diluent gas, the deposition rate of described main deposit is more than described pre-deposited
Deposition rate, for quickly forming the second layer polysilicon film on described first layer polysilicon film.
2. Polysilicon thin layer deposition as claimed in claim 1, it is characterised in that described pre-deposited gas
In body, the volume ratio of silicon-containing gas is 20%-30%, and the flow velocity of described pre-deposited gas is
300-500sccm。
3. Polysilicon thin layer deposition as claimed in claim 1, it is characterised in that when carrying out pre-deposited,
Temperature in described reaction chamber is more than 570 DEG C, and pressure is more than 0.3Torr.
4. Polysilicon thin layer deposition as claimed in claim 1, it is characterised in that described silicon-containing gas
For SiH4Or tetraethyl orthosilicate.
5. Polysilicon thin layer deposition as claimed in claim 1, it is characterised in that described diluent gas
For N2, one or more in Ar, He.
6. the Polysilicon thin layer deposition as described in claim 1-5 is arbitrary, it is characterised in that described pre-
The response time of deposit is 0.1-10.0min.
7. Polysilicon thin layer deposition as claimed in claim 6, it is characterised in that described pre-deposited
Response time is 1.0min.
8. Polysilicon thin layer deposition as claimed in claim 1, it is characterised in that main deposited gas
Flow velocity is 100-1000sccm.
9. Polysilicon thin layer deposition as claimed in claim 3, it is characterised in that when carrying out main deposit,
Temperature in described reaction chamber is more than 570 DEG C, and pressure is more than 0.3Torr.
10. Polysilicon thin layer deposition as claimed in claim 9, it is characterised in that when carrying out main deposit,
Temperature and pressure in described reaction chamber are equal to carry out the temperature in reaction chamber and pressure during pre-deposited.
11. Polysilicon thin layer deposition as claimed in claim 1, it is characterised in that described material layer
Material is silicon oxide, silicon nitride or polysilicon.
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| CN105529249A (en) * | 2016-02-29 | 2016-04-27 | 上海华力微电子有限公司 | Polycrystal silicon preparation method |
| CN108149216A (en) * | 2017-12-07 | 2018-06-12 | 上海申和热磁电子有限公司 | A kind of method for improving low-pressure chemical vapor phase deposition polysilicon membrane quality |
| CN110257908A (en) * | 2019-05-28 | 2019-09-20 | 天津中环领先材料技术有限公司 | A kind of polysilicon membrane preparation process |
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| CN101960563A (en) * | 2008-02-11 | 2011-01-26 | 应用材料股份有限公司 | Microcrystalline silicon thin film transistor |
| CN102864436A (en) * | 2011-07-06 | 2013-01-09 | 长沙理工大学 | Improved method for preparing silicon nitride anti-reflecting film of crystalline silicon solar cell |
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