CN116288709A - Method for epitaxial polysilicon - Google Patents
Method for epitaxial polysilicon Download PDFInfo
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- CN116288709A CN116288709A CN202310293274.3A CN202310293274A CN116288709A CN 116288709 A CN116288709 A CN 116288709A CN 202310293274 A CN202310293274 A CN 202310293274A CN 116288709 A CN116288709 A CN 116288709A
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- substrate
- reaction chamber
- polysilicon
- epitaxial
- polycrystalline silicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 42
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims abstract description 15
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000002203 pretreatment Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000000407 epitaxy Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Abstract
The application provides a method for epitaxial polycrystalline silicon, which comprises the following steps: providing a reaction chamber, wherein a substrate is placed in the reaction chamber; introducing hydrogen chloride gas into the reaction chamber to etch the surface of the substrate; and depositing polysilicon on the surface of the substrate. According to the technical scheme, before the polycrystalline silicon is deposited on the substrate, hydrogen chloride gas is introduced into the reaction chamber to pretreat the substrate, so that the surface flatness of the epitaxial polycrystalline silicon film can be improved, and the quality of the polycrystalline silicon film can be improved.
Description
Technical Field
The application relates to the technical field of semiconductor device production and processing, in particular to a method for epitaxial polycrystalline silicon.
Background
The polysilicon film is used as a novel semiconductor material, has high light absorptivity, photoconduction and other excellent performances, has the advantages of high mobility of monocrystalline silicon material and capability of preparing amorphous silicon material in a large area and at low cost, and is widely applied to semiconductor devices and integrated circuits.
Current methods of epitaxial polysilicon films fall broadly into two categories: one type is a direct preparation method, namely, a polysilicon film is directly deposited on the surface of a substrate, and mainly comprises a physical vapor deposition method, a chemical vapor deposition method, a liquid phase epitaxy method and the like; the other is an indirect preparation method, namely, an amorphous silicon film is obtained through deposition, and then a polycrystalline silicon film is formed through reheat annealing crystallization, and the method mainly comprises a solid phase crystallization method, a metal induced crystallization method and the like. The surface of the polysilicon film obtained by epitaxy through the method has a certain radian, which affects the manufacture of the subsequent process.
Therefore, a method is needed to be found, which can improve the surface evenness of the epitaxial polycrystalline silicon film and improve the quality of the polycrystalline silicon film.
Disclosure of Invention
The technical problem to be solved by the application is to provide the method for epitaxial polycrystalline silicon, which can improve the surface flatness of the epitaxial polycrystalline silicon film and improve the quality of the polycrystalline silicon film.
In order to solve the above problems, the following provides a method for epitaxial polycrystalline silicon, comprising the steps of: providing a reaction chamber, wherein a substrate is placed in the reaction chamber; introducing hydrogen chloride gas into the reaction chamber to pretreat the surface of the substrate; polysilicon is deposited on the surface of the substrate after pretreatment.
In some embodiments, the temperature range of the pretreatment step is between 600 ℃ and 1200 ℃ and the pressure range is between 30KPa and 110 KPa.
In some embodiments, the pretreatment step is performed in a vacuum.
In some embodiments, the flow rate of the hydrogen chloride gas in the pretreatment step is between 300L/min and 600L/min.
In some embodiments, the pretreatment time ranges from 3 minutes to 10 minutes.
According to the technical scheme, before the polycrystalline silicon is deposited on the substrate, hydrogen chloride gas is introduced into the reaction chamber to pretreat the substrate, so that the surface flatness of the epitaxial polycrystalline silicon film can be improved, and the quality of the polycrystalline silicon film can be improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
Drawings
Fig. 1 is a flow chart illustrating one embodiment of a method of epitaxial polysilicon described herein;
fig. 2 to fig. 4 are schematic views of a device structure formed by main steps of a method for epitaxial polysilicon according to an embodiment of the present application;
FIG. 5 is a graph showing comparison of flatness parameters warp broken lines of a sample obtained according to an embodiment of the method for epitaxial polycrystalline silicon described herein;
figure 6 is a graph showing a comparison of fold lines of a flatness parameter bow of a sample obtained according to an embodiment of the method for epitaxial polycrystalline silicon described herein.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
An embodiment of the present application provides a method of epitaxial polysilicon.
Referring to fig. 1, a flowchart of a method for epitaxial polysilicon according to one embodiment of the present application is shown. As shown in fig. 1, the method for epitaxial polysilicon according to the specific embodiment of the present application includes: step S101, providing a reaction chamber, wherein a substrate is placed in the reaction chamber; step S102, introducing hydrogen chloride gas into the reaction chamber to pretreat the surface of the substrate; step S103, depositing polysilicon on the surface of the substrate after pretreatment.
In the specific embodiment, before the polysilicon is deposited on the substrate, hydrogen chloride gas is introduced into the reaction chamber to pretreat the substrate, so that the surface evenness of the epitaxial polysilicon film can be improved, and the quality of the polysilicon film can be improved.
Fig. 2 to fig. 4 are schematic views of device structures formed by main steps of a method for epitaxial polysilicon according to an embodiment of the present application.
Referring to step S101, as shown in fig. 2, a reaction chamber 10 is provided, and a substrate 11 is placed in the reaction chamber 10. The material of the substrate 11 is monocrystalline silicon material and is compatible with large scale integrated circuits. In other embodiments, the material of the substrate 11 may be one of polysilicon, or amorphous silicon, or may be single crystal germanium, germanium on insulator, or a silicon germanium compound, or may have a silicon on insulator structure.
Referring to fig. 3, referring to step S102, hydrogen chloride gas 14 is introduced into the reaction chamber 10 to pretreat the surface of the substrate 11.
Further, in the present embodiment, the reaction chamber 10 is further provided with a gas inlet 12, and the gas inlet 12 is provided at a side wall of the reaction chamber 10 and connected to a hydrogen chloride gas source 13. The gas inlet 12 is used for introducing hydrogen chloride gas 14 into the reaction chamber 10 to pretreat the surface of the substrate 11.
Further, in this embodiment, the temperature of the pretreatment step is 800 ℃ and the pressure is 100KPa. In other embodiments, the temperature range of the pretreatment step is 600 ℃ to 1200 ℃ and the pressure range is 30KPa to 110 KPa.
Further, in this embodiment, the pretreatment step is performed in vacuum.
Further, in the present embodiment, in the pretreatment step, the flow rate of the hydrogen chloride gas 14 is 400L/min. In other embodiments, the flow rate of the hydrogen chloride gas 14 in the pretreatment step is between 300L/min and 600L/min.
Further, in this embodiment, the pretreatment time is 8 minutes. In other embodiments, the pretreatment time ranges from 3 minutes to 10 minutes.
Referring to fig. 4, referring to step S103, polysilicon 15 is deposited on the surface of the substrate 11 after the pretreatment. In this embodiment, polysilicon 15 is deposited on the surface of the substrate 11 by chemical vapor deposition. In other embodiments, the polysilicon 15 may be deposited on the surface of the substrate 11 by physical vapor deposition or the like.
Compared with the scheme of directly depositing polysilicon in the reaction chamber in the prior art, the technical scheme has the advantages that before depositing polysilicon, hydrogen chloride gas is introduced into the reaction chamber to pretreat the substrate, so that the flatness of the surface of the epitaxial polysilicon film can be effectively improved, and the quality of the polysilicon film is improved.
Two sets of samples are provided below for separately epitaxially polysilicon. Growing epitaxial polysilicon on samples numbered 1-1, 1-2, 1-3, 1-4, 1-5, 1-6, 1-7, 1-8, and 1-9 by conventional techniques; the samples with the numbers of 2-1, 2-2, 2-3, 2-4 and 2-5 are subjected to epitaxial polysilicon growth by adopting the method provided by the technical scheme. And flatness parameters warp and bow were measured for the pre-and post-epitaxy conditions of the two groups of samples, respectively.
Fig. 5 is a comparison chart of flatness parameters warp broken lines of a sample obtained according to an embodiment of the method for epitaxial polysilicon described in the present application. Curve 51 represents the value of the flatness parameter warp before sample epitaxy and curve 52 represents the value of the flatness parameter warp after sample epitaxy. The measurement results show that the flatness parameters warp of the two groups of samples before epitaxy are at the same level, the values of the samples warp obtained by epitaxy by adopting the conventional technology are obviously higher, and the values of the samples warp obtained by epitaxy by adopting the method provided by the technical scheme are obviously close to the parameters before epitaxy, so that the flatness of epitaxial polysilicon is obviously improved by the method provided by the technical scheme.
Fig. 6 is a graph showing a comparison of a broken line of the flatness parameter bow of a sample obtained according to an embodiment of the method for epitaxial polysilicon described herein. Curve 61 represents the value of the flatness parameter bow before sample epitaxy and curve 62 represents the value of the flatness parameter bow after sample epitaxy. The measurement results show that the flatness parameters bow of the first two groups of samples are at the same level, the bow value of the sample obtained by epitaxy by adopting the conventional technology is obviously higher, and the bow value of the sample obtained by epitaxy by adopting the method provided by the technical scheme is greatly fallen back, which indicates that the flatness of epitaxial polysilicon is obviously improved by adopting the method provided by the technical scheme.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the statement "comprises" and "comprising" does not exclude the presence of other elements than those listed in any process, method, article, or apparatus that comprises the element.
The embodiments in this application are described in a related manner, and identical and similar parts of the embodiments are all referred to each other, and each embodiment is mainly different from other embodiments.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the scope of the present application. It should be noted that, for a person skilled in the art, several improvements and modifications can be made without departing from the principle of the present application, and these improvements and modifications should also be considered as the protection scope of the present application.
Claims (5)
1. A method of epitaxial polysilicon comprising the steps of:
providing a reaction chamber, wherein a substrate is placed in the reaction chamber;
introducing hydrogen chloride gas into the reaction chamber to pretreat the surface of the substrate;
polysilicon is deposited on the surface of the substrate after pretreatment.
2. The method of claim 1, wherein the pre-treatment step is performed at a temperature in the range of 600 ℃ to 1200 ℃ and a pressure in the range of 30KPa to 110 KPa.
3. The method of claim 1, wherein the pre-treating step is performed in a vacuum.
4. The method according to claim 1, wherein in the pretreatment step, the flow rate of the hydrogen chloride gas is 300L/min to 600L/min.
5. The method according to claim 1, wherein the pretreatment time ranges from 3min to 10 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310293274.3A CN116288709A (en) | 2023-03-23 | 2023-03-23 | Method for epitaxial polysilicon |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310293274.3A CN116288709A (en) | 2023-03-23 | 2023-03-23 | Method for epitaxial polysilicon |
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| Publication Number | Publication Date |
|---|---|
| CN116288709A true CN116288709A (en) | 2023-06-23 |
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| CN202310293274.3A Pending CN116288709A (en) | 2023-03-23 | 2023-03-23 | Method for epitaxial polysilicon |
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- 2023-03-23 CN CN202310293274.3A patent/CN116288709A/en active Pending
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