JP3112796B2 - Chemical vapor deposition method - Google Patents
Chemical vapor deposition methodInfo
- Publication number
- JP3112796B2 JP3112796B2 JP06154538A JP15453894A JP3112796B2 JP 3112796 B2 JP3112796 B2 JP 3112796B2 JP 06154538 A JP06154538 A JP 06154538A JP 15453894 A JP15453894 A JP 15453894A JP 3112796 B2 JP3112796 B2 JP 3112796B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gas
- substrate
- vapor deposition
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、単結晶シリコンウエハ
等にエピタキシャル成長により結晶膜を形成する化学気
相成長方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition method for forming a crystal film on a single crystal silicon wafer or the like by epitaxial growth.
【０００２】[0002]
【従来の技術】従来から、半導体デバイスの製造工程等
においては、単結晶シリコンウエハ等にエピタキシャル
成長により結晶膜を形成することが行われている。この
ような結晶膜を形成する量産型の気相成長装置として
は、例えば、特開平５−４７６８０号公報に示されるよ
うないわゆるベルジヤー型のもの、あるいは、いわゆる
シリンダ型のもの等が知られている。2. Description of the Related Art Conventionally, in a semiconductor device manufacturing process, a crystal film is formed on a single crystal silicon wafer or the like by epitaxial growth. As a mass-production type vapor phase growth apparatus for forming such a crystal film, for example, a so-called bell-jar type or a so-called cylinder type as disclosed in JP-A-5-47680 is known. I have.
【０００３】また、例えば、特開平４−２４５４１９号
公報等に示されるように、従来から上記エピタキシャル
成長による成膜技術を利用して、半導体デバイスを製造
することが行われている。Further, as shown in, for example, Japanese Patent Application Laid-Open No. 4-245419, a semiconductor device has been conventionally manufactured by utilizing the above-mentioned film forming technique by epitaxial growth.
【０００４】このような２層構造のエピタキシャル膜を
形成する場合、従来はＳｉ原として比較的成長速度の速
いＳｉＨＣｌ3 ガスを使用している。In forming such an epitaxial film having a two-layer structure, a SiHCl 3 gas having a relatively high growth rate is conventionally used as a Si source.
【０００５】なお、このようにＳｉＨＣｌ3 ガスを使用
している理由は、第２層の膜厚が厚く、抵抗が高いた
め、成長速度の速いガスの方が条件が出し易く、スルー
プットも向上させることができるためである。The reason why the SiHCl 3 gas is used is that the second layer has a large thickness and a high resistance, so that a gas having a high growth rate is more likely to provide conditions and improve the throughput. This is because you can do it.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の方法では、１層目のエピタキシャル膜を形成
する際、ＳｉＨＣｌ3 ガスの流量を低く設定するため、
ガスの流れが悪くなり、第１層の膜厚のばらつきが大き
くなるという問題があった。このため、歩留まりが低下
し、生産性を向上させることが困難であった。However, in such a conventional method, the flow rate of the SiHCl 3 gas is set low when the first epitaxial film is formed.
There has been a problem that the gas flow becomes worse and the thickness of the first layer varies greatly. For this reason, the yield has decreased, and it has been difficult to improve the productivity.
【０００７】本発明は、かかる従来の事情に対処してな
されたもので、第１層、第２層ともにばらつきの少ない
均一な膜厚の所望のエピタキシャル膜を形成することが
でき、従来に比べて歩留まりを向上させて生産性の向上
を図ることのできる化学気相成長方法を提供しようとす
るものである。The present invention has been made in view of such a conventional situation, and it is possible to form a desired epitaxial film having a uniform thickness with little variation in both the first layer and the second layer. It is an object of the present invention to provide a chemical vapor deposition method capable of improving the yield and improving the productivity.
【０００８】[0008]
【課題を解決するための手段】請求項１記載の化学気相
成長方法は、基板を所定温度に加熱しつつ原料ガスを供
給し、当該基板上にエピタキシャル膜を形成するにあた
り、ＳｉＣｌ 4 ガスを供給して、前記基板に所定膜厚で
所定電気抵抗の第１層を成長させ、この後、ＳｉＨＣｌ
3 ガスを供給して、前記基板に前記第１層より膜厚が厚
く前記第１層より電気抵抗の高い第２層を連続的に成長
させて２層構造のエピタキシャル膜を形成することを特
徴とする。Chemical vapor deposition method according to claim 1, wherein Means for Solving the Problems], on the occasion of the raw material gas was supplied while heating the substrate to a predetermined temperature, to form an epitaxial film on the substrate, the SiCl 4 gas And supply the substrate with a predetermined thickness.
A first layer having a predetermined electrical resistance is grown, followed by SiHCl.
Supply 3 gases and make the substrate thicker than the first layer.
Continuously growing a second layer having a higher electrical resistance than the first layer
Thus, an epitaxial film having a two-layer structure is formed .
【０００９】[0009]
【００１０】[0010]
【００１１】[0011]
【作用】上記構成の本発明の化学気相成長方法では、例
えば比較的成長速度の遅いＳｉＣｌ4 ガスで電気抵抗が
低く膜厚の薄い第１層を成長させ、この後、ガスを比較
的成長速度の速いＳｉＨＣｌ3 ガスに切り換え、ＳｉＨ
Ｃｌ3 ガスで、電気抵抗が高く膜厚の厚い第２層を成長
させる。In the chemical vapor deposition method of the present invention having the above-mentioned structure, for example, a first layer having a low electric resistance and a small film thickness is grown by using a SiCl 4 gas having a relatively low growth rate, and thereafter, the gas is relatively grown. Switch to fast SiHCl 3 gas,
A second layer having a high electric resistance and a large thickness is grown with Cl 3 gas.
【００１２】これによって、第１層、第２層ともにばら
つきの少ない均一な膜厚の所望のエピタキシャル膜を形
成することができる。As a result, a desired epitaxial film having a uniform thickness with little variation can be formed in both the first and second layers.
【００１３】[0013]
【実施例】以下、本発明の一実施例について図面を参照
して説明する。An embodiment of the present invention will be described below with reference to the drawings.
【００１４】図１は、本発明の一実施例に用いた装置の
概略構成を示すもので、同図に示すように、ベルジャー
型の反応管１内には、上面に複数枚のウエハ２を保持可
能に構成されたサセプタ３が設けられており、このサセ
プタ３は図中矢印で示すように、その中心を回転軸とし
て回転可能に構成されている。FIG. 1 shows a schematic structure of an apparatus used in one embodiment of the present invention. As shown in FIG. 1, a plurality of wafers 2 are placed on a top surface in a bell-jar type reaction tube 1. A susceptor 3 configured to be able to be held is provided, and this susceptor 3 is configured to be rotatable around its center as a rotation axis, as indicated by an arrow in the figure.
【００１５】また、サセプタ３の上部には、所定のガス
を反応管１内に導入するためのガス導入ノズル４が設け
られており、反応管１の下部には排気を行うための排気
管５が設けられていて、反応管１内部を所定のガス雰囲
気とすることができるよう構成されている。A gas introduction nozzle 4 for introducing a predetermined gas into the reaction tube 1 is provided above the susceptor 3, and an exhaust pipe 5 for exhausting gas is provided below the reaction tube 1. Is provided so that the inside of the reaction tube 1 can be set to a predetermined gas atmosphere.
【００１６】さらに、サセプタ３の下部には、高周波コ
イル６が配設され、サセプタ３を介してウエハ２を所望
の温度に加熱することができるようになっている。Further, a high frequency coil 6 is provided below the susceptor 3 so that the wafer 2 can be heated to a desired temperature via the susceptor 3.
【００１７】上記構成の装置を用いて、本実施例では、
サセプタ３に保持されたウエハ２を1100〜1120℃の所定
温度に加熱し、まず、ガス導入ノズル４から、原料ガス
として比較的成長速度の遅いＳｉＣｌ4 ガスと不純物ガ
スとしてホスフィン（ＰＨ3）とキャリアガスとして水
素ガスの混合ガスを流量250 ｌ／min で供給して約10分
間第１層の成膜を行い、続いて、原料ガスを比較的成長
速度の速いＳｉＨＣｌ3 ガスに切り換え、ＳｉＨＣｌ3
ガスとホスフィンとキャリアガスとして水素ガスの混合
ガスを流量250 ｌ／min で供給して約30分間第２層の成
膜を連続的に行った。In the present embodiment, using the apparatus having the above configuration,
The wafer 2 held on the susceptor 3 is heated to a predetermined temperature of 1100 to 1120 ° C. First, a gas introduction nozzle 4 is used to supply SiCl 4 gas having a relatively low growth rate as a source gas and phosphine (PH 3 ) as an impurity gas. perform deposition of approximately the first layer 10 min the mixture gas of hydrogen gas was supplied at a flow rate of 250 l / min as a carrier gas, followed by switching the material gas to a relatively growth rate fast SiHCl 3 gas, SiHCl 3
A mixed gas of gas, phosphine, and hydrogen gas as a carrier gas was supplied at a flow rate of 250 l / min, and the second layer was continuously formed for about 30 minutes.
【００１８】これによって、第１層（膜厚約10μｍ、比
抵抗約0.05Ω-cm ）、第２層（膜厚約100 μｍ、比抵抗
約100 Ω-cm ）ともに膜厚にばらつきの少ない均一な膜
厚のエピタキシャル膜を形成することができた。As a result, the first layer (thickness of about 10 μm, specific resistance of about 0.05 Ω-cm) and the second layer (thickness of about 100 μm, specific resistance of about 100 Ω-cm) have uniform thickness with little variation in thickness. It was possible to form an epitaxial film having a large thickness.
【００１９】なお、第１層のウエハ２面内における膜厚
の面内ばらつきは、従来の４０％以下に抑制され、歩留
まりは従来の１．１〜１．２倍となった。The in-plane variation of the film thickness of the first layer on the surface of the wafer 2 was suppressed to 40% or less of the conventional one, and the yield was 1.1 to 1.2 times that of the conventional one.
【００２０】以上のように、本実施例によれば、第１
層、第２層ともにばらつきの少ない均一な膜厚のリンド
ープシリコン単結晶膜を形成することができ、従来に比
べて歩留まりを向上させて生産性の向上を図ることがで
きる。As described above, according to the present embodiment, the first
It is possible to form a phosphorus-doped silicon single crystal film having a uniform thickness with little variation in both the layer and the second layer, and it is possible to improve the yield and the productivity as compared with the conventional case.
【００２１】[0021]
【発明の効果】以上説明したように、本発明の化学気相
成長方法によれば、例えば、第１層に膜厚が薄く低抵抗
（膜厚１〜30μｍ、比抵抗0.01〜0.2 Ω-cm ）で第２層
の膜厚が厚く高抵抗（膜厚30〜300 μｍ、比抵抗１〜30
0 Ω-cm ）のＩＧＢＴ用又はスイッチング・ダイオード
用エピウエハの製造において、第１層、第２層ともにば
らつきの少ない均一な膜厚の所望のエピタキシャル膜を
形成することができ、従来に比べて歩留まりを向上させ
て生産性の向上を図ることができる。As described above, according to the chemical vapor deposition method of the present invention, for example, the first layer has a small film thickness and low resistance (film thickness 1 to 30 μm, specific resistance 0.01 to 0.2 Ω-cm). ), The thickness of the second layer is large and the resistance is high (thickness: 30 to 300 μm, specific resistance: 1 to 30).
In the manufacture of IGBT or switching diode epiwafers of 0 Ω-cm), a desired epitaxial film having a uniform thickness with little variation can be formed in both the first layer and the second layer. And the productivity can be improved.
【図１】本発明の一実施例の化学気相成長方法に用いる
装置の構成を示す図。FIG. 1 is a diagram showing a configuration of an apparatus used in a chemical vapor deposition method according to one embodiment of the present invention.
１ 反応管 ２ ウエハ ３ サセプタ ４ 原料ガス導入ノズル ５ 排気管 ６ 高周波コイル DESCRIPTION OF SYMBOLS 1 Reaction tube 2 Wafer 3 Susceptor 4 Source gas introduction nozzle 5 Exhaust tube 6 High frequency coil
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/205 H01L 21/31 C23C 16/00 C30B 25/00 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int. Cl. 7 , DB name) H01L 21/205 H01L 21/31 C23C 16/00 C30B 25/00
Claims (1)
供給し、当該基板上にエピタキシャル膜を形成するにあ
たり、 ＳｉＣｌ4 ガスを供給して、前記基板に所定膜厚で所定
電気抵抗の第１層を成長させ、この後、ＳｉＨＣｌ3 ガ
スを供給して、前記基板に前記第１層より膜厚が厚く前
記第１層より電気抵抗の高い第２層を連続的に成長させ
て２層構造のエピタキシャル膜を形成することを特徴と
する化学気相成長方法。1. A source gas is supplied while heating a substrate to a predetermined temperature, and in forming an epitaxial film on the substrate, a SiCl 4 gas is supplied to the substrate so that the substrate has a predetermined thickness and a predetermined electric resistance. One layer is grown, and thereafter, a SiHCl 3 gas is supplied to continuously grow a second layer having a thickness greater than that of the first layer and a higher electrical resistance than the first layer on the substrate, thereby forming two layers. A chemical vapor deposition method comprising forming an epitaxial film having a structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06154538A JP3112796B2 (en) | 1994-07-06 | 1994-07-06 | Chemical vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06154538A JP3112796B2 (en) | 1994-07-06 | 1994-07-06 | Chemical vapor deposition method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0822959A JPH0822959A (en) | 1996-01-23 |
| JP3112796B2 true JP3112796B2 (en) | 2000-11-27 |
Family
ID=15586452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP06154538A Expired - Lifetime JP3112796B2 (en) | 1994-07-06 | 1994-07-06 | Chemical vapor deposition method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3112796B2 (en) |
-
1994
- 1994-07-06 JP JP06154538A patent/JP3112796B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0822959A (en) | 1996-01-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH01162326A (en) | Manufacture of beta-silicon carbide layer | |
| JPS58130517A (en) | Manufacture of single crystal thin film | |
| JP3207832B2 (en) | CVD reactor and method for producing epitaxially grown semiconductor wafers | |
| JPS63233564A (en) | Manufacture of junction transistor | |
| JP2911694B2 (en) | Semiconductor substrate and method of manufacturing the same | |
| JP3112796B2 (en) | Chemical vapor deposition method | |
| JP3424069B2 (en) | Manufacturing method of epitaxial silicon substrate | |
| JPH10189695A (en) | Vapor growth susceptor and manufacture thereof | |
| JPH01134912A (en) | Manufacture of semiconductor thin film | |
| US20070254451A1 (en) | Process for forming a silicon-based single-crystal portion | |
| JPH0427116A (en) | Method of forming semiconductor heterojunction | |
| WO2023199656A1 (en) | Method for producing polysilicon wafer | |
| JP2539427B2 (en) | Method for manufacturing silicon carbide semiconductor device | |
| JPS6369220A (en) | Manufacture of group iv semiconductor thin film | |
| JPH02102520A (en) | Vapor epitaxial deposition | |
| JPH09213635A (en) | Formation of heteroepitaxial semiconductor substrate, compound semiconductor device having the substrate and its manufacture | |
| JP2003528443A5 (en) | ||
| JPH071753B2 (en) | Method for manufacturing semiconductor device | |
| JPS6325914A (en) | Manufacture of semiconductor device | |
| JPS61131434A (en) | Manufacture of semiconductor device | |
| KR100234230B1 (en) | Multiple epitaxial structure and fabricating method therefor | |
| JP3005253B2 (en) | Method for forming polycrystalline semiconductor | |
| CN115074825A (en) | Silicon carbide epitaxial structure, pulse type growth method and application thereof | |
| JP2000351694A (en) | Method of vapor-phase growth of mixed crystal layer and apparatus therefor | |
| JPH06232142A (en) | Manufacture of semiconductor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20000905 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080922 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080922 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090922 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090922 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100922 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100922 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110922 Year of fee payment: 11 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120922 Year of fee payment: 12 |