CN103325665B - The forming method of polysilicon layer - Google Patents
The forming method of polysilicon layer Download PDFInfo
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Abstract
A kind of forming method of polysilicon layer, including：Substrate is provided；The substrate is put into reaction chamber；Silicon-containing gas and the first impurity gas are passed through in toward the reaction chamber, doped silicon material layer is formed on the substrate；Formed after doped silicon material layer, toward the reaction chamber in be passed through the second impurity gas that flow velocity is 200~700sccm, formation doped polysilicon layer；Temperature wherein in reaction chamber is more than 570 DEG C, and more than temperature when forming doped silicon material layer in reaction chamber.The doping concentration of the doped polysilicon layer prepared can be improved by the technical program, the resistivity of polysilicon layer is effectively reduced.
Description
Technical field
The present invention relates to semiconductor applications, a kind of forming method of polysilicon layer is related specifically to.
Background technology
Still it is widely used and manufactures using the semiconductor devices of polysilicon gate, but polysilicon is a kind of semiconductor
Material, its resistivity ratio is higher, and the method for impurity is commonly used at present to reduce its resistivity.
In the prior art, LPCVD is commonly used（Low-pressure chemical vapor phase deposition）Method forms polysilicon layer, utilizes SiH4（Silicon
Alkane）Gas, by thermally decomposing to generate polysilicon, is deposited in substrate as source of the gas and forms polysilicon layer；And in SiH4In gas
It is mixed into AsH3、PH3、B2H6To carry out the polysilicon of generation doping in situ Deng gas.
But make it is very limited to reduce the ability of polysilicon layer resistivity in this way, due to by polysilicon to miscellaneous
The limitation of matter solid solubility, the concentration of impurity is generally 1 × 1021~1 × 1022atom/cm3（Atoms per cubic centimeter）, after doping
The resistivity of polysilicon layer be about 40~100 Ω cm（Ohmcm）.Utilize the polycrystalline of such polysilicon layer formation
The resistivity of silicon gate can not meet requirement of the high speed device to speed and frequency.
Moreover, in the prior art, polysilicon layer is completed in a deposition process, pressure is easily formed in polysilicon layer should
Power, with the continuous reduction of dimensions of semiconductor devices, this compression likely results in the failure of device.
The content of the invention
The problem of present invention is solved is that in the prior art, the polysilicon layer resistivity prepared is big, and should in the presence of pressure
Power.
To solve the above problems, the present invention provides a kind of forming method of polysilicon layer, including：Substrate is provided；Will be described
Substrate is put into reaction chamber；Silicon-containing gas and the first impurity gas are passed through in toward the reaction chamber, is formed mix on the substrate
Miscellaneous silicon material layer；Formed after doped silicon material layer, toward the reaction chamber in be passed through that flow velocity is 200~700sccm second
Impurity gas, forms doped polysilicon layer；Temperature wherein in reaction chamber is more than 570 DEG C, and more than forming doped silicon material layer
When reaction chamber in temperature.
Optionally, the doped polysilicon layer has predetermined thickness；Or, the thickness of the doped polysilicon layer is less than in advance
Determine thickness, formed after the doped polysilicon layer, in addition to：Repeat the formation doped silicon material layer and the formation doping is more
The step of crystal silicon layer, until obtaining the doped polysilicon layer of predetermined thickness.
Optionally, when forming the doped polysilicon layer, the temperature in the reaction chamber is 580~680 DEG C.
Optionally, when forming the doped polysilicon layer, the flow velocity of second impurity gas is 300~500sccm.
Optionally, the time for forming the doped polysilicon layer is 10~15min.
Optionally, when forming the doped polysilicon layer, the pressure in reaction chamber is 0.1~5.0Torr.
Optionally, when forming doped silicon material layer, the temperature in the reaction chamber is less than 570 DEG C, the doped silicon material
Silicon in layer is non-crystalline silicon.
Optionally, when forming doped silicon material layer, the temperature in the reaction chamber is more than 570 DEG C of doped silicon material layers
In silicon be polysilicon.
Optionally, the time for forming doped silicon material layer is the pressure in 3~5min, reaction chamber for 0.1~
1.0Torr, the flow velocity of silicon-containing gas is 0.1~5.0slm, and the flow velocity of the first impurity gas is 10~50sccm.
Optionally, the silicon-containing gas are SiH4Or tetraethyl orthosilicate.
Optionally, first impurity gas is AsH3、PH3、B2H6In one or more, second impurity gas
For AsH3、PH3、B2H6In one or more.
Compared with prior art, technical scheme has advantages below：
In the technical program, formed after doped silicon material layer, then toward higher temperature（Adulterated more than 570 DEG C, and more than being formed
Temperature during silicon material layer in reaction chamber）Reaction chamber in high flow rate（200~700sccm）The second impurity gas is passed through, with
Improve the impurity concentration in doped silicon material layer.Temperature is higher, and doping concentration of the impurity in polysilicon layer is higher, impurity gas
Flow velocity be also beneficial to greatly improve polysilicon layer in doping concentration, so obtained doped polysilicon layer doping concentration is very high.
Because the raising of impurity concentration in polysilicon layer can effectively reduce the resistivity of polysilicon layer, so the doped polysilicon layer
Resistivity be greatly reduced.Temperature in reaction chamber is higher, can also improve the diffusion velocity of impurity, obtain doping concentration homogeneous
Doped polysilicon layer, make the resistivity of doped polysilicon layer homogeneous.
Further, the silicon in the doped silicon material layer is non-crystalline silicon, and the solid solubility of impurity in amorphous silicon is more than impurity
Solid solubility in polysilicon layer, therefore, the concentration ratio of impurity is larger in doped silicon material layer.Due to doped silicon material layer
In the step of forming doped polysilicon layer, the impurity in doped silicon material layer will not be separated out, therefore improve doped silicon material
The concentration of impurity, also accordingly improves the concentration of impurity in doped polysilicon layer in layer, and this is conducive to obtaining, and resistivity is low to mix
Miscellaneous polysilicon layer., can be by the doped silicon material because the temperature in reaction chamber is more than 570 DEG C when forming doped polysilicon layer
Non-crystalline silicon in the bed of material is converted into polysilicon, and the resistivity of polysilicon is less than the resistivity of non-crystalline silicon, forms the doped polycrystalline
Silicon layer resistivity can further reduce.
Further, non-crystalline silicon can be converted into polysilicon at 570 DEG C or so, and the thickness of non-crystalline silicon is smaller, non-crystalline silicon
The energy barrier converted to polysilicon is lower, so the non-crystalline silicon of thickness of thin is conducive to converting to polysilicon.In non-crystalline silicon to polycrystalline
During silicon is converted, the size of microcrystal of formation is relevant with the thickness of non-crystalline silicon, and the thickness of non-crystalline silicon is smaller, the polysilicon of formation
Size of microcrystal is just smaller, and the number of die obtained in unit volume is more, and the passage formed between crystal grain is also increased as, this
Be conducive to diffusion of the impurity in polysilicon layer, improve the concentration of polysilicon doping and the homogeneity of doping concentration.This technology side
In case the doping of predetermined thickness is obtained by the way that the step of forming doped silicon material layer and form doped polysilicon layer is repeated several times
Polysilicon layer, the thickness very little of the doped silicon material layer formed every time, if the silicon in doped silicon material layer is non-crystalline silicon,
The small non-crystalline silicon be conducive in the doped silicon material layer of the thickness of the doped silicon material layer is converted into polysilicon, also helps
Obtain the tiny polysilicon layer of size of microcrystal, improve the concentration of doping and the homogeneity of concentration, and then it is homogeneous to obtain resistivity, and
The low doped polysilicon layer of resistivity.The thickness of the doped silicon material layer is small to be also conducive to first, second impurity gas to ooze
The whole doped silicon material layer, obtains the homogeneous doped polysilicon layer of doping concentration, obtains the homogeneous doping of resistivity many thoroughly
Crystal silicon layer.Obtained in the technical program by the way that the step of forming doped silicon material layer and form doped polysilicon layer is repeated several times
The pressure formed in the polysilicon layer of predetermined thickness, the thickness very little of the doped silicon material layer formed every time, doped silicon material layer
It is readily obtained release；And often formed after one layer of doped silicon material layer, by being passed through the second impurity gas to improve doped silicon material
The concentration of impurity in the bed of material, usually requires to carry out at relatively high temperatures in this process, high temperature is conducive to the release of pressure, enters
One step is discharged the compression formed in doped silicon material layer, and this favorably obtains the small doped polysilicon layer of stress.
Brief description of the drawings
Fig. 1 is the schematic flow sheet of the forming method of first embodiment of the invention polysilicon layer；
Fig. 2 and Fig. 3 are the cross-sectional views of the forming method of first embodiment of the invention polysilicon layer；
Fig. 4 to Fig. 7 is the cross-sectional view of the forming method of second embodiment of the invention polysilicon layer.
Embodiment
In the prior art, due to being limited by solid solubility of the impurity in polysilicon layer, impurity is in polysilicon layer
Concentration very little, causes the resistivity of polysilicon layer big；And polysilicon layer is generally completed in a deposition process, easily in polycrystalline
Compression is formed in silicon layer.In order to solve described problem, the invention provides a kind of forming method of polysilicon layer.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
First embodiment
Reference picture 1, the forming method of the polysilicon layer of first embodiment includes：
Step S1：Substrate is provided；
Step S2：The substrate is put into reaction chamber；
Step S3：Silicon-containing gas and the first impurity gas are passed through in toward the reaction chamber, doping is formed on the substrate
Silicon material layer;
Step S4：Formed after doped silicon material layer, toward the reaction chamber in be passed through flow velocity be 200~700sccm's
Second impurity gas, forms doped polysilicon layer, and the wherein temperature in reaction chamber is more than 570 DEG C, and more than forming doped silicon material
The temperature during bed of material 102 in reaction chamber.
Describe the forming method of first embodiment of the invention polysilicon layer in detail with reference to cross-sectional view.
There is provided substrate 101 for reference picture 2；The substrate 101 is put into reaction chamber（It is not shown）.
In a particular embodiment, the material of the substrate 101 can be silicon, SiGe, silicon-on-insulator（silicon on
Insulator, abbreviation SOI）Deng conventional semi-conducting material.
The volume of the reaction chamber is general all very big, many substrates 101 is generally placed in reaction chamber, so as to all bases
Bottom 101 carries out polysilicon layer depositing technics simultaneously.If silicon-containing gas and the first impurity gas are passed through reaction by a breather valve
Chamber, silicon-containing gas and the first impurity gas are difficult to be uniformly dispersed in reaction chamber, are difficult to make after deposit to obtain in different base 101
Thickness is homogeneous and the homogeneous polysilicon layer of doping concentration.
In a particular embodiment, the reaction chamber contains the top vent valve being arranged at the top of reaction chamber, is arranged at reaction
Middle part breather valve and the bottom ventilation valve for being arranged at reaction chamber bottom in the middle part of chamber.Make reacting gas by top vent valve, middle part
Breather valve and bottom ventilation valve are passed through in reaction chamber simultaneously, reacting gas can be made to be evenly distributed in reaction chamber, be made different bases
The thickness that is obtained on bottom 101 is homogeneous and the homogeneous polysilicon layer of doping concentration.
With continued reference to Fig. 2, toward the reaction chamber in be passed through silicon-containing gas and the first impurity gas, in the substrate 101
Form doped silicon material layer 102.
In a particular embodiment, the temperature in reaction chamber is higher than the decomposition temperature of the silicon-containing gas, and silicon-containing gas are passed through
After in the reaction chamber, decompose.And the temperature in the reaction chamber is less than 570 DEG C, silicon-containing gas decompose generation non-crystalline silicon,
The si deposition forms the doped silicon material layer 102 in the substrate 101.Due to being also passed through first in reaction chamber
Impurity gas, can decompose generation non-crystalline silicon in impurity, improve doping homogeneity.
Because the solid solubility of impurity in amorphous silicon is more than solid solubility of the impurity in polysilicon, the doped silicon material layer
Amorphous state is presented in silicon in 102, it is possible to improve the concentration of impurity in doped silicon material layer 102.The doped silicon material layer
102 are forming doped polysilicon layer 103（With reference to Fig. 3）The step of in, doped silicon material layer 102 in impurity will not separate out, because
This improves the concentration of impurity in doped silicon material layer 102, also accordingly improves doped polysilicon layer 103（With reference to Fig. 3）Middle impurity
Concentration.The concentration of impurity is higher in doped polysilicon layer 103, and its resistivity is lower, improves miscellaneous in doped polysilicon layer 103
The concentration of matter, also just reduces the resistivity of the doped polysilicon layer 103.
In a particular embodiment, when forming doped silicon material layer 102, the flow velocity of first impurity gas for 10~
50sccm（Mark every point of condition milliliter）, the flow velocity of silicon-containing gas is 0.1~5.0slm（Standard liters per minute）.
In a particular embodiment, when forming doped silicon material layer 102, the first impurity gas is passed through by top vent valve
The flow velocity of reaction chamber is 0~5sccm, and the flow velocity that reaction chamber is passed through by middle part breather valve is 0~5sccm, is led to by bottom ventilation valve
The flow velocity for entering reaction chamber is 10~50sccm.
First impurity gas is passed through reaction simultaneously by the top vent valve, middle part breather valve and bottom ventilation valve of reaction chamber
Chamber, it is ensured that the first impurity gas uniform concentration distribution in reaction chamber, can improve impurity in the doped silicon material layer 102
The homogeneity of concentration.Because substrate 101 of the bottom ventilation valve in reaction chamber is in larger distance, and to make to be led to by bottom ventilation valve
The first impurity gas entered can be reached at the top of reaction chamber, it is necessary to make the first impurity gas that reaction chamber is passed through by bottom ventilation valve
Flow velocity it is big compared with the flow velocity for the first impurity gas that reaction chamber is passed through by top vent valve and middle part breather valve.Middle part breather valve and
Top vent valve is close apart from substrate 101, and the first impurity gas of reaction chamber is passed through by top vent valve and middle part breather valve
Flow velocity can be smaller, but to enable the first impurity gas that middle part breather valve is passed through reaction chamber to reach at the top of reaction chamber, it is necessary to
The flow velocity for the first impurity gas for being passed through reaction chamber by middle part breather valve is set to mix compared with being passed through the first of reaction chamber by top vent valve
The flow velocity of miscellaneous gas is big.
In a particular embodiment, silicon-containing gas can also be by top vent valve, middle part breather valve and bottom ventilation valve simultaneously
It is passed through in the reaction chamber.
First impurity gas makes doped p type impurity or p-type impurity in the doped silicon material layer 102.Specific
In embodiment, first impurity gas is AsH3、PH3、B2H6In one or more, in other embodiments, can also root
According to the type selecting of doping other impurity gas known in the art.In a particular embodiment, the silicon-containing gas are SiH4
Or tetraethyl orthosilicate.In other embodiments, or other gases known in the art.
The size of pressure in reaction chamber can influence the pressure in the doping concentration in doped silicon material layer 102, reaction chamber
Higher, the doping concentration in doped silicon material layer 102 is bigger, but the pressure in reaction chamber is in doped silicon material layer 102
The influence of doping concentration is smaller.In a particular embodiment, when forming doped silicon material layer 102, the pressure in reaction chamber is
0.1~1.0Torr.
With reference to Fig. 3, formed after the doped silicon material layer 102, toward the reaction chamber in be passed through flow velocity be 200~
700sccm the second impurity gas, forms doped polysilicon layer 103, wherein the temperature in reaction chamber is more than 570 DEG C, and is more than
Temperature when forming doped silicon material layer 102 in reaction chamber.
Non-crystalline silicon is converted into polysilicon when temperature is higher than 570 DEG C.In the present embodiment, in the doped silicon material layer of formation
Silicon is that the temperature in amorphous state, reaction chamber is more than 570 DEG C, can be converted into amorphous doped silicon material layer 102 of formation
Doped polysilicon layer 103.Because the resistivity of polysilicon is less than the resistivity of non-crystalline silicon, obtained doped polycrystalline is advantageously reduced
The resistivity of silicon layer 103.
In the prior art, the method for forming doped polysilicon layer is：First in the non-of substrate surface formation doping at 530 DEG C
Crystal silicon material layer, afterwards, the amorphous silicon material layer are converted into polysilicon layer in subsequent technique of the temperature higher than 570 DEG C.This
In embodiment, when amorphous doped silicon material layer is converted into doped polysilicon layer, also continue to be passed through the second impurity gas,
And temperature is raised to above 570 DEG C.Temperature is higher, and polysilicon layer is higher to the solid solubility of impurity, so obtained doping
The doping concentration of polysilicon layer 103 is very high.Because the raising of impurity concentration in polysilicon layer can effectively reduce the electricity of polysilicon layer
Resistance rate, so the resistivity of the doped polysilicon layer 103 is greatly reduced.In addition, temperature is higher, moreover it is possible to which accelerating impurity is in polycrystalline
Diffusion in silicon layer, obtains the homogeneous polysilicon layer of doping concentration；And then obtain that resistivity is homogeneous, and the low polysilicon of resistivity
Layer.
In a particular embodiment, when forming the doped polysilicon layer 103, the temperature in reaction chamber can be 580~680
℃。
When forming the doped polysilicon layer 103, the flow velocity for the second impurity gas being passed through in reaction chamber is bigger, described to mix
Impurity concentration in miscellaneous polysilicon layer 103 is higher.Impurity concentration in the doped polysilicon layer 103 is also by the pressure in reaction chamber
Pressure in strong size influence, reaction chamber is higher, and the doping concentration in doped polysilicon layer 103 is bigger, but in reaction chamber
Influence of the pressure to the doping concentration in doped polysilicon layer 103 it is smaller.
In a particular embodiment, when forming the doped polysilicon layer 103, the flow velocity of the second impurity gas can be selected
Pressure in 300~500sccm, reaction chamber is 0.1~5.0Torr.The flow velocity of second impurity gas is described much larger than being formed
The flow velocity of first impurity gas during doped silicon material layer 102, to improve concentration of the impurity in doped polysilicon layer 103, finally
Reduce the resistivity of polysilicon layer.
In a particular embodiment, when forming the doped polysilicon layer 103, the second impurity gas is passed through by top vent valve
The flow velocity of reaction chamber is 50~100sccm, and the flow velocity that reaction chamber is passed through by middle part breather valve is 50~100sccm, is led to by bottom
The flow velocity that air valve is passed through reaction chamber is 100~500sccm.
Second impurity gas is passed through reaction simultaneously by the top vent valve, middle part breather valve and bottom ventilation valve of reaction chamber
Chamber, it is ensured that the second impurity gas uniform concentration distribution in reaction chamber, can improve impurity in the doped polysilicon layer 103
The homogeneity of concentration.Second impurity gas is passed through the setting reason of the flow velocity of reaction chamber by each breather valve and forms the doped silicon
The setting reason that second impurity gas described in during material layer 102 is passed through the flow velocity of reaction chamber by each breather valve is identical.
The thickness of the doped polysilicon layer 103 is relevant also with forming the time of the doped polysilicon layer 103, and the time gets over
Long, the thickness of the doped polysilicon layer 103 is bigger.In a particular embodiment, the time of the doped polysilicon layer 103 is formed
For 10~15min.At this moment, the doped polysilicon layer 103 has predetermined thickness.The predetermined thickness refers to the institute finally given
The thickness of doped polysilicon layer 103 is stated, i.e., the thickness of described doped polysilicon layer 103 has met process requirements, without increasing again
Plus its thickness.
In a particular embodiment, when forming doped polysilicon layer 103, obstructed silicon-containing gas can also be passed through a small amount of siliceous
Gas.
In a particular embodiment, second impurity gas is AsH3、PH3、B2H6In one or more, in other realities
Apply in example, other impurity gas known in the art can also be selected according to the type of doping.Second impurity gas
It is identical with first impurity gas, can also be different.
Above example is only illustrated so that the silicon in doped silicon material layer 102 is non-crystalline silicon as an example.In other realities
Apply in example, when forming doped silicon material layer 102, the temperature in reaction chamber is not only above the decomposition temperature of the silicon-containing gas
Degree, and higher than 570 DEG C.After silicon-containing gas are passed through in the reaction chamber, generation polysilicon is decomposed, the polysilicon is deposited on institute
State in substrate 101, form the doped silicon material layer 102.Silicon in i.e. described doped silicon material layer 102 is polysilicon.
In the prior art, in substrate surface deposition of amorphous silicon material layer generally at 530 DEG C.In the technical program, reaction
The temperature of intracavitary is higher than 570 DEG C, the higher concentration that can improve impurity in doped silicon material layer 102 of temperature, and then reduces
Its resistivity；The homogeneity of impurity concentration in doped silicon material layer 102 can also be improved.
When forming doped polysilicon layer 103, the temperature in reaction chamber is higher than when forming doped silicon material layer 102 in reaction chamber
Temperature, formed doped polysilicon layer 103 when, moreover it is possible to further improve doped polysilicon layer 103 in doping concentration.
Second embodiment
The difference of second embodiment and first embodiment is：
The thickness of doped polysilicon layer meets the thickness of process requirements less than the thickness ratio of predetermined thickness, i.e. doped polysilicon layer
Degree is small, it is necessary to which the step of repeating first embodiment is to form the doped polysilicon layer of predetermined thickness.
The technical program is comprised the following steps that：
There is provided substrate 201 for reference picture 4；The substrate 201 is put into reaction chamber（It is not shown）.It is specific to may be referred to the
Corresponding steps in one embodiment.
With continued reference to Fig. 4, toward the reaction chamber in be passed through silicon-containing gas and the first impurity gas, in the substrate 201
Form the first doped silicon material layer 202A.The specific corresponding steps that may be referred in first embodiment.
In a particular embodiment, the time for forming the first doped silicon material layer 202A is 3~5min.It can select,
The time for forming the first doped silicon material layer 202A is 2min.
With reference to Fig. 5, formed after the first doped silicon material layer 202A, toward the reaction chamber in be passed through flow velocity be 200~
700sccm the second impurity gas, formed the first doped polysilicon layer 203A, wherein the temperature in reaction chamber be more than 570 DEG C, and
More than temperature when forming the first doped silicon material layer 202A in reaction chamber.The specific phase that may be referred in first embodiment
Answer step.
The step of repeating to be passed through silicon-containing gas and the first impurity gas toward in the reaction chamber with reference to Fig. 6, in the first doping
The second doped silicon material layer 202B is formed on polysilicon layer.
With reference to Fig. 7, repeat to be passed through toward in the reaction chamber flow velocity for 200~700sccm the second impurity gas the step of,
And the temperature of reaction chamber is more than 570 DEG C, the second doped polysilicon layer 203B is formed.
In a practical situation, without obvious boundary between the first doped polysilicon layer 203A and the second doped polysilicon layer 203B
Line, but for sake of convenience, using different fillings to show differentiation in Fig. 7.
First doped polysilicon layer 203A and the second doped polysilicon layer 203B constitute the DOPOS doped polycrystalline silicon of predetermined thickness
Layer, i.e. the first doped polysilicon layer 203A and the second doped polysilicon layer 203B are the doped polysilicon layer 203 finally given.Institute
The thickness for stating doped polysilicon layer 203 meets predetermined thickness requirement, without repeating above-mentioned steps.
Non-crystalline silicon can be converted into polysilicon at 570 DEG C or so, and the thickness of non-crystalline silicon is smaller, and non-crystalline silicon is to polysilicon
The energy barrier of conversion is lower, so the non-crystalline silicon of thickness of thin is conducive to converting to polysilicon.Converted in non-crystalline silicon to polysilicon
During, the size of microcrystal of formation is relevant with the thickness of non-crystalline silicon, and the thickness of non-crystalline silicon is smaller, the polysilicon grain particle diameter of formation
Just smaller, the number of die obtained in unit volume is more, and the passage formed between crystal grain is also increased as, and this is conducive to miscellaneous
Diffusion of the matter in polysilicon layer, improves the concentration of doping polycrystalline silicon layer and the homogeneity of doping concentration.
The step of in the technical program by being repeatedly formed doped silicon material layer and forming doped polysilicon layer, is pre- to obtain
Determine the doped polysilicon layer of thickness, the thickness very little of each layer of doped silicon material layer of formation.The each layer of doped silicon material
Silicon in layer is non-crystalline silicon, and the thickness of each layer of doped silicon material layer is small to be conducive to non-crystalline silicon to be converted into polysilicon, also has
The polysilicon tiny beneficial to size of microcrystal is obtained, so improve the doping of each layer of doped polysilicon layer concentration and concentration it is homogeneous
Property, and then obtain that resistivity is homogeneous, and the low doped polysilicon layer of resistivity.
The thickness of each layer of doped silicon material layer is small to be also beneficial to described in the infiltration entirely of the first and second impurity gas
Each layer of doped silicon material layer, obtains the homogeneous doped polysilicon layer 203 of doping concentration, and then obtain the homogeneous doping of resistivity
Polysilicon layer 203.
The step of in the technical program by being repeatedly formed doped silicon material layer and forming doped polysilicon layer, is pre- to obtain
Determine the doped polysilicon layer 203 of thickness, the thickness very little of the doped silicon material that is formed every time layer is formed in doped silicon material layer
Pressure is readily obtained release；And often formed after one layer of doped silicon material layer, by being passed through the second impurity gas to improve doping
The concentration of impurity in silicon material layer, usually requires to carry out at relatively high temperatures in this process, high temperature is conducive to releasing for pressure
Put, further discharged the compression formed in each layer of doped silicon material layer, this favorably obtains the small doping of stress
Polysilicon layer 203.
Illustrated in the present embodiment exemplified by forming two layers of doped polysilicon layer, in the present invention, the doped polycrystalline of formation
The number of plies of silicon layer can be determined according to actual process, that is to say, that repeat toward be passed through in the reaction chamber silicon-containing gas with
The step of first impurity gas, toward the step of be passed through the second impurity gas that flow velocity is 200~700sccm in the reaction chamber
Number of times needs to be determined according to actual process.
In the present embodiment, the silicon in each layer of doped silicon material is non-crystalline silicon.In the present invention, each layer of doped silicon material layer
In silicon can also be polysilicon.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (8)
1. a kind of forming method of polysilicon layer, it is characterised in that including：
Substrate is provided；
The substrate is put into reaction chamber；
Silicon-containing gas and the first impurity gas are passed through in toward the reaction chamber, doped silicon material layer is formed on the substrate, its
The middle formation doped silicon material layer includes：Temperature in the reaction chamber is less than the silicon in 570 DEG C, the doped silicon material layer
It is polysilicon to be more than the silicon in 570 DEG C, the doped silicon material layer for the temperature in non-crystalline silicon, or the reaction chamber；
Formed after doped silicon material layer, toward the reaction chamber in be passed through second impurity gas of the flow velocity for 200~700sccm
Doped silicon material layer is doped, to form doped polysilicon layer, the wherein temperature in reaction chamber is more than 570 DEG C, and
More than temperature when forming doped silicon material layer in reaction chamber, the thickness of the doped polysilicon layer of formation is less than predetermined thickness
Degree；And
The step of repeating the formation doped silicon material layer and the formation doped polysilicon layer, until obtaining mixing for predetermined thickness
Miscellaneous polysilicon layer；
Wherein, first impurity gas is identical with the doping type of second impurity gas.
2. the forming method of polysilicon layer as claimed in claim 1, it is characterised in that when forming the doped polysilicon layer,
Temperature in the reaction chamber is 580~680 DEG C.
3. the forming method of polysilicon layer as claimed in claim 2, it is characterised in that when forming the doped polysilicon layer,
The flow velocity of second impurity gas is 300~500sccm.
4. the forming method of polysilicon layer as claimed in claim 3, it is characterised in that formed the doped polysilicon layer when
Between be 10~15min.
5. the forming method of polysilicon layer as claimed in claim 4, it is characterised in that when forming the doped polysilicon layer,
Pressure in reaction chamber is 0.1~5.0Torr.
6. the forming method of polysilicon layer as claimed in claim 1, it is characterised in that formed the doped silicon material layer when
Between be 3~5min, the pressure in reaction chamber is 0.1~1.0Torr, and the flow velocity of silicon-containing gas is 0.1~5.0slm, the first doping
The flow velocity of gas is 10~50sccm.
7. the forming method of polysilicon layer as claimed in claim 1, it is characterised in that the silicon-containing gas are SiH4Or positive silicon
Acetoacetic ester.
8. the forming method of polysilicon layer as claimed in claim 1, it is characterised in that first impurity gas is AsH3、
PH3、B2H6In one or more；
Second impurity gas is AsH3、PH3、B2H6In one or more.
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| CN105439075B (en) * | 2014-08-04 | 2018-08-21 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method thereof, electronic device |
| CN109216154A (en) * | 2017-07-03 | 2019-01-15 | 上海新昇半导体科技有限公司 | A kind of semiconductor devices and its manufacturing method, electronic device |
| CN109987568A (en) * | 2017-12-29 | 2019-07-09 | 中芯国际集成电路制造(上海)有限公司 | The forming method of membrane structure, acoustic-electrical transducer part and forming method thereof |
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| CN1214540A (en) * | 1997-10-15 | 1999-04-21 | 世界先进积体电路股份有限公司 | Manufacture of MOS transistor with P+ polysilicon grid |
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| CN102162138A (en) * | 2011-01-17 | 2011-08-24 | 上海宏力半导体制造有限公司 | Doped gas supply equipment and doped gas supply method |
| US8318575B2 (en) * | 2011-02-07 | 2012-11-27 | Infineon Technologies Ag | Compressive polycrystalline silicon film and method of manufacture thereof |
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| CN1164763A (en) * | 1997-04-08 | 1997-11-12 | 世界先进积体电路股份有限公司 | Method for making inter-connecting polycrystalline silicon to polycrystalline silicon low resistance contact on integrated circuit |
| CN1214540A (en) * | 1997-10-15 | 1999-04-21 | 世界先进积体电路股份有限公司 | Manufacture of MOS transistor with P+ polysilicon grid |
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