CN109987568A - The forming method of membrane structure, acoustic-electrical transducer part and forming method thereof - Google Patents
The forming method of membrane structure, acoustic-electrical transducer part and forming method thereof Download PDFInfo
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- CN109987568A CN109987568A CN201711473501.1A CN201711473501A CN109987568A CN 109987568 A CN109987568 A CN 109987568A CN 201711473501 A CN201711473501 A CN 201711473501A CN 109987568 A CN109987568 A CN 109987568A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
- B81C1/00365—Creating layers of material on a substrate having low tensile stress between layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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Abstract
This application discloses a kind of forming methods of membrane structure, acoustic-electrical transducer part and forming method thereof, the embodiment of the present invention forms the membrane structure by depositing multiple polysilicon layers, and each polysilicon layer stress is adjusted respectively, thus, the range that the adjusting of membrane structure stress can be expanded, obtains desired stress parameters.The vibrating diaphragm of the acoustic-electrical transducer part of film forming method preparation according to an embodiment of the present invention, can have preferable stress parameters, to have better performance.
Description
Technical field
The present invention relates to semiconductor processing technologies, and in particular to a kind of forming method of membrane structure, acoustic-electrical transducer part
And forming method thereof.
Background technique
Acoustic-electrical transducer is used to carry out the conversion between acoustical signal and electric signal.Microphone is by sound wave (that is, acoustical signal)
It is converted into the acoustic-electrical transducer of electric signal.Loudspeaker is then the acoustic-electrical transducer for converting electrical signals to acoustical signal.
Sensor based on MEMS (Micro-Electro-Mechanical System, MEMS) is widely applied
In each class of electronic devices.Currently, making increasingly for the small form factor requirements of the acoustic-electrical transducers part such as microphone and loudspeaker
More devices is manufactured using MEMS technology.
As an example, capacitive MEMS microphone includes back plate electrode and the vibrating diaphragm with electrode runs parallel arranged
(Membrane).Back plate electrode and vibrating diaphragm form plane-parallel capacitor.Back plate electrode and vibrating diaphragm are by arranging on a semiconductor substrate
Support construction support.Back plate electrode is perforated, so that acoustic pressure wave passes through backboard simultaneously because being formed in the pressure difference on vibrating diaphragm
And make diaphragm oscillations.Therefore, the air gap between film and back plate electrode changes with vibration vibration of membrane.Vibrating diaphragm is relative to backboard
The variation of the position of electrode causes the variation of the capacitor between vibrating diaphragm and back plate electrode.This variation of capacitor is in response to film
It moves and is transformed into output signal, and form the electric signal of conversion.
Using similar structure, electric signal can be applied between vibrating diaphragm and back plate electrode to vibrate it and generate
Acoustic pressure wave.Therefore, capacitive MEMS structure also is used as Microspeaker.
Vibrating diaphragm usually passes through one layer of polysilicon layer of deposition, and then etches polycrystalline silicon layer and the sacrificial layer of lower section are formed.
During forming the vibrating diaphragm by semiconductor fabrication process, stress (Stress) parameter of membrane structure is for device
Performance and service life have large effect.The part prior art is controlled by adding other structures on vibrating diaphragm and adjusting is answered
Power.The part prior art adjusts stress parameters by adjusting technological parameter.It is limited to equipment performance, vibrating diaphragm intensity requirement and whole
There is certain stress blind area in the requirement of body unit for electrical property parameters, existing regulative mode, it is difficult to adjust in a wider range
Save the stress of membrane structure.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of forming method of membrane structure, acoustic-electrical transducer part and its formation
Method obtains desired stress parameters to expand the stress adjustable range for vibrating diaphragm.
According to a first aspect of the embodiments of the present invention, a kind of forming method of membrane structure is provided, which comprises
The first polysilicon layer is deposited on substrate；
The stress of first polysilicon layer is adjusted to scheduled first range；And
The second polysilicon layer is deposited on first polysilicon layer so that the second polysilicon layer has and the first polycrystalline
The different types of stress of silicon layer；And
The stress of second polysilicon layer is adjusted to scheduled second range, so that the entirety of the membrane structure is answered
Power in the desired range in.
Further, the stress of first polysilicon layer is adjusted by ion implanting and/or annealing.
Further, the stress for adjusting first polysilicon layer includes successively executing following steps:
Carry out ion implanting；
It is reoxidized；And
Carry out first time annealing.
Further, by the energy of adjusting ion implanting, the doping of ion implanting and/or annealing temperature to adjust
State the stress of the first polysilicon layer.
Further, the forming method of second polysilicon layer are as follows: pass through low pressure in the environment of having doped source
Learn vapor deposition (LPCVD) deposit polycrystalline silicon.
Further, the stress of second polysilicon layer is adjusted by second of annealing.
Further, described to be annealed into rapid thermal annealing for the second time.
Further, first polysilicon layer and second polysilicon layer have different-thickness.
Further, first polysilicon layer and second polysilicon layer are deposited using different technology types, with
So that first polysilicon layer and second polysilicon layer generate different types of stress；And/or
First polysilicon layer and second polysilicon layer are deposited using different technological parameter, so that described the
One polysilicon layer and second polysilicon layer generate different types of stress.
Further, the technological parameter includes deposition pressure and deposition thickness.
Further, the method also includes:
At least one polysilicon layer of sequential aggradation again on second polysilicon layer, and each polysilicon layer is adjusted one by one
Stress.
Further, the method also includes:
Before the stress for adjusting second polysilicon layer, the deposited oxide layer on second polysilicon layer.
Further, the oxide skin(coating) deposits to be formed using ethyl orthosilicate as silicon precursor.
Further, the membrane structure is used to form the vibrating diaphragm of acoustic-electrical transducer part.
According to a second aspect of the embodiments of the present invention, a kind of forming method of acoustic-electrical transducer part, the method packet are provided
It includes:
Semiconductor substrate is provided, the semiconductor substrate has opposite the first face and the second face；
The first sacrificial layer is deposited on the first face of the semiconductor substrate；
Membrane structure is formed on first sacrificial layer according to method described in above-mentioned first aspect；
The second sacrificial layer and patterned back plate electrode layer are sequentially depositing on the membrane structure to obtain capacitance structure；
The second face of the semiconductor substrate is etched, back chamber is formed；And
Etching removal at least partly the first sacrificial layer and the second sacrificial layer are to form the cavity for accommodating vibrating diaphragm.
According to a third aspect of the embodiments of the present invention, a kind of acoustic-electrical transducer part is provided, comprising:
Semiconductor substrate；
Back plate electrode is formed in the side of semiconductor substrate；And
Vibrating diaphragm is set in the cavity between back plate electrode and semiconductor substrate；
Wherein, the vibrating diaphragm includes stacked the first polysilicon layer and the second polysilicon layer of sequence.
Further, first polysilicon layer and/or second polysilicon layer are the polysilicon layer through overdoping.
Further, first polysilicon layer and second polysilicon layer have different thickness.
Further, the vibrating diaphragm further includes at least one polysilicon layer being stacked and placed on second polysilicon layer.
Compared with the prior art, the embodiment of the present invention forms the membrane structure by depositing multiple polysilicon layers, and
Each polysilicon layer stress is adjusted respectively, thus, it is possible to expand the range of membrane stress adjusting, obtains desired stress parameters.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, the above and other purposes of the present invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 is the forming method flow chart of the membrane structure of the embodiment of the present invention；
Fig. 2-Fig. 5 is the schematic diagram of the membrane structure forming process of the embodiment of the present invention；
Fig. 6 is the stress variation schematic diagram of the first polysilicon layer formed in the embodiment of the present invention；
Fig. 7 is the stress variation schematic diagram of the second polysilicon layer of the embodiment of the present invention；
Fig. 8 is the flow chart of the forming method of the membrane structure of another embodiment of the present invention；
Fig. 9-Figure 14 is the schematic diagram of the forming process of the MEMS microphone of the embodiment of the present invention；
Figure 15 is the sectional view of the MEMS microphone of the embodiment of the present invention.
Specific embodiment
Below based on embodiment, present invention is described, but the present invention is not restricted to these embodiments.Under
Text is detailed to describe some specific detail sections in datail description of the invention.Do not have for a person skilled in the art
The present invention can also be understood completely in the description of these detail sections.In order to avoid obscuring essence of the invention, well known method, mistake
There is no narrations in detail for journey, process, element and circuit.In addition, it should be understood by one skilled in the art that attached provided herein
Figure is provided to the purpose of explanation, and attached drawing is not necessarily drawn to scale.
Unless the context clearly requires otherwise, "include", "comprise" otherwise throughout the specification and claims etc. are similar
Word should be construed as the meaning for including rather than exclusive or exhaustive meaning；That is, be " including but not limited to " contains
Justice.In the description of the present invention, unless otherwise indicated, the meaning of " plurality " is two or more.
It should be understood that when element or layer be referred to " ... on ", " with ... it is adjacent ", " being connected to " or " being coupled to " it is other
When element or layer, can directly on other elements or layer, it is adjacent thereto, be connected or coupled to other elements or layer, or
There may be elements or layer between two parties by person.On the contrary, when element is referred to as " on directly existing ... ", " with ... direct neighbor ", " directly
It is connected to " or " being directly coupled to " other elements or when layer, then there is no elements or layer between two parties.
May be used herein for ease of description such as " ... under ", " ... below ", "lower", " ... on ", "upper"
Etc. spatial relation terms to describe the pass between an elements or features as shown in drawings and another (a little) elements or features
System.It should be appreciated that spatial relation term is intended to summarize the device of device in use or operation in addition to being orientated shown in attached drawing
Different orientation.For example, if the device in attached drawing turns, be described as " " other elements or feature " under " or " under
The element in face " will be in " top " of other elements or feature.Therefore, exemplary term " ... below " it can be covered
Upper two kinds of orientations under.Device can take other orientations (being rotated by 90 ° or in other orientations), close used herein of space
It is that descriptor is interpreted accordingly.
Fig. 1 is the forming method flow chart of the membrane structure of the embodiment of the present invention.As shown in Figure 1, the film of the present embodiment
The forming method of structure includes the following steps:
Step S100, the first polysilicon layer 20 is deposited on substrate 10.
Step S200, the stress of first polysilicon layer 20 is adjusted to scheduled first range.
Step S300, the second polysilicon layer 30 is deposited on first polysilicon layer 20 so that the second polysilicon layer 30
With with the different types of stress of the first polysilicon layer 20.
Step S400, the stress of second polysilicon layer 30 is adjusted to scheduled second range, so that the film
The integrated stress of structure in the desired range in.
Specifically, referring to fig. 2, substrate 10 is provided.The present embodiment using plasma enhances oxide (Plasma
Electrolytic Oxidation, PEOX) as the substrate for forming membrane structure.The film layer of plasma enhanced oxidation object is logical
It is often cellular porous structure, corrosion resistance is lower, therefore, is suitable for sacrificial layer.It should be understood that the substrate of the present embodiment
The material of the bearing film structure in MEMS manufacturing process can be suitable for the application of using other oxides or semiconductor material etc..
In an optional implementation, substrate 10 with a thickness of 15-20K angstroms.
The first polysilicon layer 20 is deposited on substrate 10 in step S100 referring to Fig. 3.In the present embodiment, substrate 10
Two faces are exposed in depositing device, therefore, in the step s 100, are deposited in two faces of substrate 10 and are formed the first polycrystalline
Silicon layer 20.First polysilicon layer 20 can be that silicon precursor is formed by chemical vapor deposition (CVD) technique with silane (SiH4).?
In one optional implementation, deposition pressure is that 0.1-0.4 holds in the palm (Torr), and the deposition thickness of the first polysilicon layer is 200-
19000 angstroms.The available adjusting of stress by adjusting deposition pressure and deposition thickness, in the first polysilicon layer.
It should be understood that the first polysilicon layer 20 and subsequent each layer can also be only deposited on a face of substrate 10, this
Manufacturing process suitable for the subsequent preparation MEMS microphone to be described.
In step S200, the stress of the first polysilicon layer 20 is adjusted by ion implanting and annealing to scheduled first model
It encloses.For the vibrating diaphragm applied to MEMS acoustic-electrical transducer part, conduction is needed, therefore, it is necessary to be doped to polysilicon, so that
Its structure and conductivity change.Doped chemical therein can be the p type impurities such as boron, or the N-type impurities such as phosphorus.Together
When, it is deposited by chemical vapor deposition after forming the first polysilicon layer 20, it is also desirable to anneal to solidify the first polysilicon layer
20, improve its intensity.
By controlling the technological parameter of the two techniques, the stress ginseng of the first polysilicon layer 20 can also be further adjusted
Number.Specifically, step S200 may include the following steps successively executed: step S210, carry out ion implanting；Step S220,
It is reoxidized；And step S230, carry out annealing solidification.
In an optional implementation, in step S210, the energy for controlling ion implanting is 100-200Kev, is adulterated dense
Degree is 5E13-5E14.Thus, it is possible to be adjusted while the first polysilicon layer 20 of doping makes it with preferable electric conductivity
Its internal stress is saved.Reoxidizing for step S220 carries out in the oxygen atmosphere under being about 850-900 degrees Celsius in temperature.Pass through
Re-oxidation process can make polysilicon be recrystallized.Being annealed into for step S230 carries out in a nitrogen environment, annealing temperature
It is about 1060-1080 degrees Celsius, annealing time is about 60 seconds.By annealing process, the first polysilicon layer 20 can be obtained preferably
Intensity.Meanwhile meeting variation so that the lattice inside the first polysilicon layer 20 is arranged of annealing, to change its stress intensity.It is logical
Overregulate annealing temperature, adjustable stress.Fig. 6 be show the first polysilicon layer obtained by above-mentioned technique stress and
The relationship of thickness.As shown in fig. 6, carrying out the first polysilicon layer 20 of ion implanting and annealing acquisition by above-mentioned technological parameter
Stress parameters change between -600 to -180Mpa according to the difference of thickness.As a result, by controlling the first polycrystalline in step S100
The deposition thickness of silicon layer, so that it may obtain membrane structure of the stress parameters -600 to -180Mpa.Meanwhile by adjust from
The doping concentration and/or annealing temperature of energy, ion implanting that son injects, so that it may change the crystalline substance inside the first polysilicon layer 20
Body structure, to obtain different stress parameters.
Referring to fig. 4, step S300 deposits the second polysilicon layer 30 on first polysilicon layer 20.Second polysilicon
Layer 30 can be formed by various existing poiysilicon deposition process.In an optional implementation, the second polysilicon layer 30
It can be formed by low-pressure chemical vapor deposition (LPCVD).It is possible to further be with phosphorous gas (for example, PH3) simultaneously
Doped source carries out doping in situ while depositing the second polysilicon layer 30.Carry out LPCVD temperature can be about 580 to
590 degrees Celsius, the thickness of the second polysilicon layer 30 can be(angstrom).
It should be understood that it is not high or when not requiring in the conduction needs to membrane structure, it can also be without doping.
By different depositing operation and doping process, the second polysilicon layer 30 has and 20 inhomogeneity of the first polysilicon layer
The stress of the stress of type, the second polysilicon layer 30 can cancel out each other with the stress of the first polysilicon layer 20, thus bigger
The stress parameters of entire membrane structure are adjusted in range.It is also adjustable entire by adjusting the thickness of the second polysilicon layer 30
The stress parameters of membrane structure.
Since step S300 has carried out doping in situ while deposit polycrystalline silicon layer, in step S400, Ke Yizhi
Second of row is tapped into anneal.In the present embodiment, by adjusting the temperature of second annealing, also adjustable second polysilicon layer
30 stress adjusts the stress parameters of entire membrane structure to scheduled second range.In an optional implementation,
It is annealed into the rapid thermal annealing (Rapid Thermal Annealing, RTA) carried out with 850-900 degrees Celsius for the second time.Fast
In speed heat annealing, quick temperature-rise period and of short duration duration can be in the reparation of lattice defect, activator impurity and minimums
Change and obtains optimization between impurity diffusion three.It should be understood that can also adjust the second polysilicon layer 30 using other annealing process
Stress.
Referring to Fig. 5, under the premise of the second polysilicon layer 30 is adulterated, the impurity in rapid thermal annealing in order to prevent
Pollution rapid thermal annealers are precipitated.It needs to increase step S300a (making to be represented by dashed line in Fig. 1) before step S300.In step
Rapid S300a, the deposited oxide layer 40 on the second polysilicon layer 30.Oxide layer 40 can close the second polysilicon layer 30, prevent it
In impurity be precipitated.In an optional implementation, oxide layer 40 by with ethyl orthosilicate (Ethylsilicate,
TEOS it) is obtained for silicon precursor reaction, deposition thickness is(angstrom), depositing temperature are about 680 degrees Celsius.It should be understood that oxygen
Changing layer 40 can also be formed by the techniques such as silane heating CVD technique, PECVD, PE-TEOS or regular oxidation technique.
Pass through the stress parameters of the second polysilicon layer of above-mentioned optional implementation formation and relationship such as Fig. 7 institute of thickness
Show.Experiment shows that the stress parameters of the second polysilicon layer 30 change between 250-360Mpa with its thickness.As a result, more than second
The stress of crystal silicon layer 30 can cancel out each other a part with the stress of the first polysilicon layer 20, so that the entirety of membrane structure
Stress is smaller, is adjusted in the range of expectation.
As a result, compared with the prior art, the embodiment of the present invention forms the film knot by depositing multiple polysilicon layers
Structure, and each polysilicon layer stress is adjusted respectively, thus, it is possible to expand the range of membrane stress adjusting, obtain desired stress
Parameter.
Fig. 8 is the flow chart of the forming method of the membrane structure of another embodiment of the present invention.As shown in figure 8, this implementation
The method of example includes the following steps:
Step S100 ', the first polysilicon layer 20 is deposited on substrate 10.
Step S200 ', the stress for adjusting first polysilicon layer 20.
Step S300 ', the second polysilicon layer 30 is deposited on first polysilicon layer 20 so that the second polysilicon layer
With with the different types of stress of the first polysilicon layer.
Step S400 ', the stress for adjusting second polysilicon layer 30.
Step S500 ', third polysilicon layer 50 is deposited on second polysilicon layer 30.
Step S600 ', the stress for adjusting the third polysilicon layer 50.
Wherein, the stress types of third polysilicon layer 50 can be identical as the first polysilicon layer 20, can also be with more than second
Crystal silicon layer is identical.
Wherein it is possible to the stress of different polysilicon layers is controlled by ion implanting and/or the technological parameter of annealing, from
And realize the adjusting to membrane structure integrated stress.The deposition of different polysilicon layers can using different technology type and/
Or technological parameter deposits to be formed.For example, different polysilicon layers also can have different thickness.Thus, it is possible to biggish
The stress of the membrane structure formed is adjusted in range.
The embodiment of the present invention is not intended to limit the quantity of the polysilicon layer of deposition, can according to need the more polysilicons of deposition
Layer, and the stress of the polysilicon layer is adjusted after each layer of polysilicon layer, thus by the whole of the membrane structure finally obtained
In body stress control in the desired range.
The forming method of the embodiment of the present invention suitably forms the vibrating diaphragm of acoustic-electric transducing head.Below with capacitive MEMS Mike
It is illustrated for the forming process of wind.It should be understood that following illustrate exemplary only, other types of acoustic-electrical transducer part
And MEMS microphone with other structures or other processing procedures for being suitable for acoustic-electrical transducer can be applicable in it is of the invention real
Apply the forming method of the membrane structure of example.
Semiconductor substrate 1 is provided in step S1000 referring to Fig. 9.Semiconductor substrate 1 can for silicon substrate, silicon-Germanium substrate,
Silicon carbide substrates, silicon-on-insulator substrate, germanium substrate on insulator, glass substrate or III-V compound substrate (such as nitrogenize
Gallium substrate or gallium arsenide substrate etc.).Be used to form the semiconductor substrate 1 of MEMS microphone with preceding described for carrying polycrystalline
The substrate 10 of silicon layer is not identical, and the two can be formed using identical or different material.
Referring to Figure 10, in step S2000, deposited sacrificial layer 11 on semiconductor substrate 1.Sacrificial layer can be to pass through PEOX
The oxide skin(coating) of process deposits.
Referring to Figure 11, in step S3000, the forming method on sacrificial layer 11 through the foregoing embodiment is formed with multiple
The membrane structure 12 of polysilicon layer.
Sacrificial layer 13 and back plate electrode layer 14 are sequentially depositing on membrane structure 12 in step S4000 referring to Figure 12.Into
And back plate electrode layer 14 is patterned, form the back plate electrode with several through-holes 141.Wherein, sacrificial layer 11 and sacrifice
Layer 13 material and membrane structure 12 material between etching selection ratio with higher, meanwhile, the material of above-mentioned sacrificial layer with
Also etching selection ratio with higher between the material of back plate electrode layer 14.This can guarantee to remove back bottom of chamber subsequently through etching
When the sacrificial layer 11 and sacrificial layer 13 in portion, membrane structure 12 (namely vibrating diaphragm) and back plate electrode layer 14 are substantially unaffected.
Pass through step S4000 as a result, the capacitance structure to be formed on semiconductor substrate 1 can be prepared.
Referring to Figure 13, in step S5000, the etching by multiple steps opens semiconductor substrate 1 from back-etching formation
Mouth figure 15, so that the exposure of sacrificial layer 11 is in the opening.The opening figure 15 is used to form back chamber.
Part and the sacrificial layer 13 of sacrificial layer 11 are removed by wet etching, is gone simultaneously in step S6000 referring to Figure 14
Except the oxide layer (not shown) of the exposure mask as etching back chamber.
Method through the embodiment of the present invention forms membrane structure 12 due to being polysilicon, in wet etching process
In not will receive the influence of etching liquid substantially.Simultaneously as the stress of membrane structure 12 is preferably adjusted in forming process
It is whole, in the expected range of designer.Therefore, the vibrating diaphragm of the microphone formed according to the present embodiment method is joined with preferable stress
Number so that its performance parameter and the consistency of design parameter are higher, and has better yield.
Figure 15 is the sectional view of the MEMS microphone formed according to the above method.As shown in figure 15, the Mike of the present embodiment
The back plate electrode 14 and vibrating diaphragm 12 that bellows chamber includes semiconductor substrate 1, is formed in one side of substrate.Vibrating diaphragm 12 is set to 14 He of back plate electrode
In cavity between semiconductor substrate 1.Semiconductor substrate 1 below vibrating diaphragm 12 is additionally provided with back chamber 15.
Vibrating diaphragm 12 includes stacked the first polysilicon layer 121 and the second polysilicon layer 122 of sequence.Optionally, the first polycrystalline
Silicon layer 121 and the second polysilicon layer 122 have different thickness.Optionally, the first polysilicon layer 121 and the second polysilicon layer
122 are solidified by different annealing process annealing to have different stress, so that the stress parameters of entire vibrating diaphragm exist
In the range of it is expected that.
In order to enable vibrating diaphragm 12 is conductive, at least one layer is in the first polysilicon layer 121 and the second polysilicon layer 122
Doped polysilicon layer.When being doped polysilicon layer two layers, the two can be formed by different doping process.
It should be understood that the vibrating diaphragm 12 of the present embodiment only includes two polysilicon layers.And in other embodiments, vibrating diaphragm 12 can
To be stacked more polysilicon layers to obtain desired stress parameters.
Compared with the prior art, the embodiment of the present invention forms the membrane structure by depositing multiple polysilicon layers, and
Each polysilicon layer stress is adjusted respectively, thus, it is possible to expand the range of membrane stress adjusting, obtains desired stress parameters.
The above description is only a preferred embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For, the invention can have various changes and changes.All any modifications made within the spirit and principles of the present invention are equal
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (19)
1. a kind of forming method of membrane structure, comprising:
The first polysilicon layer is deposited on substrate；
The stress of first polysilicon layer is adjusted to scheduled first range；And
The second polysilicon layer is deposited on first polysilicon layer so that the second polysilicon layer has and the first polysilicon layer
Different types of stress；And
The stress of second polysilicon layer is adjusted to scheduled second range, so that the integrated stress of the membrane structure exists
In desired range.
2. the forming method of membrane structure according to claim 1, which is characterized in that pass through ion implanting and/or annealing
To adjust the stress of first polysilicon layer.
3. the forming method of membrane structure according to claim 2, which is characterized in that adjust first polysilicon layer
Stress includes successively executing following steps:
Carry out ion implanting；
It is reoxidized；And
Carry out first time annealing.
4. the forming method of membrane structure according to claim 2, which is characterized in that by the energy for adjusting ion implanting
Amount, the doping of ion implanting and/or annealing temperature adjust the stress of first polysilicon layer.
5. the forming method of membrane structure according to claim 1, which is characterized in that the formation of second polysilicon layer
Method are as follows: pass through low-pressure chemical vapor deposition deposit polycrystalline silicon in the environment of having doped source.
6. the forming method of membrane structure according to claim 3, which is characterized in that by second of annealing to adjust
State the stress of the second polysilicon layer.
7. the forming method of membrane structure according to claim 6, which is characterized in that described to be annealed into fast speed heat for the second time
Annealing.
8. the forming method of membrane structure according to claim 1, which is characterized in that first polysilicon layer and described
Second polysilicon layer has different-thickness.
9. the forming method of membrane structure according to claim 1, which is characterized in that deposited using different technology types
First polysilicon layer and second polysilicon layer, so that first polysilicon layer and second polysilicon layer tool
There is different types of stress；And/or
First polysilicon layer and second polysilicon layer are deposited using different technological parameters, so that more than described first
Crystal silicon layer and second polysilicon layer have different types of stress.
10. the forming method of membrane structure according to claim 9, which is characterized in that the technological parameter includes deposition
Pressure and deposition thickness.
11. the forming method of membrane structure according to claim 1, feature exist, the method also includes:
At least one polysilicon layer of sequential aggradation again on second polysilicon layer, and completed in each layer of polysilicon layer
The stress of the polysilicon layer is adjusted afterwards.
12. the forming method of membrane structure according to claim 1, which is characterized in that the method also includes:
Before the stress for adjusting second polysilicon layer, the deposited oxide layer on second polysilicon layer.
13. the forming method of membrane structure according to claim 12, which is characterized in that the oxide skin(coating) is with positive silicic acid
Ethyl ester deposits to be formed as silicon precursor.
14. the forming method of membrane structure according to claim 1, which is characterized in that the membrane structure is used to form
The vibrating diaphragm of acoustic-electrical transducer part.
15. a kind of forming method of acoustic-electrical transducer part, comprising:
Semiconductor substrate is provided, the semiconductor substrate has opposite the first face and the second face；
The first sacrificial layer is deposited on the first face of the semiconductor substrate；
According to claim 1, method described in any one of -14 forms membrane structure on first sacrificial layer；
The second sacrificial layer and patterned back plate electrode layer are sequentially depositing on the membrane structure to obtain capacitance structure；
The second face of the semiconductor substrate is etched, back chamber is formed；And
Etching removal at least partly the first sacrificial layer and the second sacrificial layer are to form the cavity for accommodating vibrating diaphragm.
16. a kind of acoustic-electrical transducer part, comprising:
Semiconductor substrate；
Back plate electrode is formed in the side of semiconductor substrate；And
Vibrating diaphragm is set in the cavity between back plate electrode and semiconductor substrate；
Wherein, the vibrating diaphragm includes stacked the first polysilicon layer and the second polysilicon layer of sequence.
17. acoustic-electrical transducer part according to claim 16, which is characterized in that first polysilicon layer and/or described
Second polysilicon layer is the polysilicon layer through overdoping.
18. acoustic-electrical transducer part according to claim 16, which is characterized in that first polysilicon layer and described second
Polysilicon layer has different thickness.
19. acoustic-electrical transducer part according to claim 16, which is characterized in that the vibrating diaphragm further includes being stacked and placed on described
At least one polysilicon layer on two polysilicon layers.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115012032A (en) * | 2022-08-09 | 2022-09-06 | 广州粤芯半导体技术有限公司 | Polycrystalline silicon thin film and forming method thereof |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07307308A (en) * | 1994-05-12 | 1995-11-21 | Hitachi Ltd | Film forming method and manufacture of semiconductor integrated circuit device using the same |
| CN1901758A (en) * | 2005-07-19 | 2007-01-24 | 青岛歌尔电子有限公司 | Capacitive silicon microphone |
| CN1942022A (en) * | 2005-09-26 | 2007-04-04 | 雅马哈株式会社 | Capacitor microphone, diaphragm and manufacturing method thereof |
| JP4048179B2 (en) * | 2004-01-30 | 2008-02-13 | シャープ株式会社 | Manufacturing method of semiconductor device |
| CN101835080A (en) * | 2010-05-10 | 2010-09-15 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone |
| CN102610592A (en) * | 2012-03-09 | 2012-07-25 | 上海宏力半导体制造有限公司 | Manufacturing method of trench-type metal oxide semiconductor (MOS) static electricity discharging structure and integrated circuit |
| CN102932719A (en) * | 2011-08-12 | 2013-02-13 | 中芯国际集成电路制造(上海)有限公司 | Thin film structure of condenser microphone and method for forming thin film structure |
| CN103107240A (en) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | Polycrystalline silicon thin-film solar cell and manufacture method thereof |
| CN103325665A (en) * | 2013-05-28 | 2013-09-25 | 上海宏力半导体制造有限公司 | Forming method of polycrystalline silicon layer |
| CN103607684A (en) * | 2013-11-29 | 2014-02-26 | 上海集成电路研发中心有限公司 | Capacitive silicon microphone and preparing method thereof |
| CN103832967A (en) * | 2014-03-10 | 2014-06-04 | 上海先进半导体制造股份有限公司 | Method for processing micro-electromechanical systems (MEMS) sensor |
| CN104053104A (en) * | 2013-03-12 | 2014-09-17 | 北京卓锐微技术有限公司 | Silicon capacitor microphone and manufacture method thereof |
| CN106816370A (en) * | 2015-11-27 | 2017-06-09 | 无锡华润上华科技有限公司 | A kind of manufacture method of semiconductor devices |
| CN107449538A (en) * | 2016-06-01 | 2017-12-08 | 三菱电机株式会社 | Semiconductor pressure sensor |
-
2017
- 2017-12-29 CN CN201711473501.1A patent/CN109987568A/en active Pending
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07307308A (en) * | 1994-05-12 | 1995-11-21 | Hitachi Ltd | Film forming method and manufacture of semiconductor integrated circuit device using the same |
| JP4048179B2 (en) * | 2004-01-30 | 2008-02-13 | シャープ株式会社 | Manufacturing method of semiconductor device |
| CN1901758A (en) * | 2005-07-19 | 2007-01-24 | 青岛歌尔电子有限公司 | Capacitive silicon microphone |
| CN1942022A (en) * | 2005-09-26 | 2007-04-04 | 雅马哈株式会社 | Capacitor microphone, diaphragm and manufacturing method thereof |
| CN101835080A (en) * | 2010-05-10 | 2010-09-15 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone |
| CN102932719A (en) * | 2011-08-12 | 2013-02-13 | 中芯国际集成电路制造(上海)有限公司 | Thin film structure of condenser microphone and method for forming thin film structure |
| CN102610592A (en) * | 2012-03-09 | 2012-07-25 | 上海宏力半导体制造有限公司 | Manufacturing method of trench-type metal oxide semiconductor (MOS) static electricity discharging structure and integrated circuit |
| CN103107240A (en) * | 2012-12-06 | 2013-05-15 | 杭州赛昂电力有限公司 | Polycrystalline silicon thin-film solar cell and manufacture method thereof |
| CN104053104A (en) * | 2013-03-12 | 2014-09-17 | 北京卓锐微技术有限公司 | Silicon capacitor microphone and manufacture method thereof |
| CN103325665A (en) * | 2013-05-28 | 2013-09-25 | 上海宏力半导体制造有限公司 | Forming method of polycrystalline silicon layer |
| CN103607684A (en) * | 2013-11-29 | 2014-02-26 | 上海集成电路研发中心有限公司 | Capacitive silicon microphone and preparing method thereof |
| CN103832967A (en) * | 2014-03-10 | 2014-06-04 | 上海先进半导体制造股份有限公司 | Method for processing micro-electromechanical systems (MEMS) sensor |
| CN106816370A (en) * | 2015-11-27 | 2017-06-09 | 无锡华润上华科技有限公司 | A kind of manufacture method of semiconductor devices |
| CN107449538A (en) * | 2016-06-01 | 2017-12-08 | 三菱电机株式会社 | Semiconductor pressure sensor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115012032A (en) * | 2022-08-09 | 2022-09-06 | 广州粤芯半导体技术有限公司 | Polycrystalline silicon thin film and forming method thereof |
| CN115012032B (en) * | 2022-08-09 | 2022-11-04 | 广州粤芯半导体技术有限公司 | Polycrystalline silicon thin film and forming method thereof |
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