CN104053104A - Silicon capacitor microphone and manufacture method thereof - Google Patents
Silicon capacitor microphone and manufacture method thereof Download PDFInfo
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- CN104053104A CN104053104A CN201310078621.7A CN201310078621A CN104053104A CN 104053104 A CN104053104 A CN 104053104A CN 201310078621 A CN201310078621 A CN 201310078621A CN 104053104 A CN104053104 A CN 104053104A
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Abstract
The invention discloses a silicon capacitor microphone and a manufacture method thereof. The silicon capacitor microphone comprises a substrate, a back pole plate and a vibration diaphragm, wherein the vibration diaphragm is arranged between the substrate and the back pole plate; the substrate is provided with a sound cavity; a fixation air gap is arranged between the back pole plate and the vibration diaphragm; and the vibration diaphragm and the back pole plate are respectively provided with an electrode-leading bonding pad for electrical connection; the vibration diaphragm is circular in shape, and the edge of the vibration diaphragm are fixedly arranged on the substrate in a fully-enclosed manner; and the vibration diaphragm comprises a center hole and one or a plurality of wrinkle rings concentric with the center hole, the wrinkle ring locating within the area equal to or larger than 1/2 radius of the vibration diaphragm. According to the silicon capacitor microphone, through the structural change of the vibration diaphragm, the impact-resistance performance of the silicon capacitor microphone when the silicon capacitor microphone is subjected to external impact and high pressure airflow blowing can be improved; the conductive polysilicon vibration diaphragm is helped to release stress; the high sensitivity of the vibration diaphragm is kept; and therefore, the purpose of improving quality, reducing cost and broadening product application occasions is realized.
Description
Technical field
The present invention relates to micro-microphone technical field, particularly a kind of silicon capacitor microphone and manufacture method thereof of using polysilicon vibrating diaphragm.
Background technology
Micro electronmechanical (MEMS micro-electro-mechanical system) microphone or claim silicon microphone because its volume is little, be suitable in electronic installation that the advantages such as surface mount are widely used in tool sound collection function, as mobile phone, MP3, recording pen and monitoring equipment etc.Silicon capacitor microphone generally includes substrate, back pole plate and vibrating diaphragm, wherein vibrating diaphragm is the core component of silicon capacitor microphone, it had both needed to reflect delicately sound pressure signal and it had been converted into the signal of telecommunication, need to blow at extraneous blast again hit, the stress of dropping shock and inner processing technology discharge effect of stress after retention substantially normally work unchangeably.
Traditional silicon micro-microphone generally comprises the vibration section and the support portion being connected with substrate that vibrating diaphragm forms, and the cross section of support portion is rectangle.The stress gradient that this structure sheaf stress produces vibrating diaphragm cannot discharge, and vibrating diaphragm buckling strength is low, and technique challenge degree is high.Higher and more consistent for guaranteeing the sensitivity of polysilicon vibrating diaphragm, in prior art, the strain reliefs that adopt are made vibrating diaphragm more, and as depicted in figs. 1 and 2, wherein 01Wei Mao district, 02 is peripheral strain relief or sunk part.Again for example, Chinese patent CN101572850A and CN102065354A have provided respectively in a kind of plane and the organization plan of the vibrating diaphragm that plane eliminates stress outward, and US Patent No. 20060280319 has provided a kind of scheme of eliminating vibrating diaphragm stress by the fold on vibrating diaphragm edge cantilever beam especially.
Yet, although such scheme can reach the effect that stress is eliminated, but for polysilicon vibrating diaphragm, all make structure become non-totally enclosed open structure, blow and hit or dropping shock in the situation that being subject to extraneous blast, impact stress will produce high stress concentrations on the faying face between vibrating diaphragm periphery cantilever beam Yu Mao district, thereby causes structural failure, and impact is normally used.Chinese patent CN101931852A has provided and has a kind ofly used monocrystalline silicon to make totally-enclosed vibrating diaphragm and on vibrating diaphragm, make the scheme that fold eliminates stress, but relative polysilicon process and material, etch stop legal system in its scheme is made the technique relative complex of monocrystalline silicon vibrating diaphragm, and cost is also higher.If use polysilicon process to realize same target, on controlling, stress consistency exists very large difficulty.In addition, Chinese patent CN201491265U has provided the totally-enclosed vibrating diaphragm that has fold, and its cross-section structure as shown in Figure 3.In CN201491265U, disclosed fold form is fairly simple, as can be seen from Figure 3, is directly connected and makes section V-shaped, and between each joint face, chamfering is not set between two fold rings 03.Stress discreteness control level from the material behavior of vibrating diaphragm and existing technique, adopt the vibrating diaphragm of this fold form can only be applicable to its literary composition in traditional miniature capacitance type microphone of mentioning, and for for the silicon capacitor microphone of polysilicon vibrating diaphragm, due to the own characteristic of polycrystalline silicon material and the limitation of technological level, in CN201491265U, disclosed fold form is also inapplicable.
Crimp shape when fold being set on sealing polysilicon vibrating diaphragm and arranging, US Patent No. 20120091546 has provided a kind of scheme of eliminating and discharge as far as possible polysilicon stress.But because its target is to eliminate and discharge the stress of polysilicon vibrating diaphragm as far as possible, therefore for the special low stress of pursuing has been made limit regulation to technology stress level of control, control range to residual stress is had relatively high expectations, and complex process is unfavorable for the large-scale industrial production of low-cost high qualification rate.Meanwhile, this patent is not considered the anti-conforming problem of hitting property, sensitivity and residual stress of blowing of silicon microphone yet, still has inconvenience while therefore applying.
Summary of the invention
The object of the invention is to solve the defect that the impact resistance existing in current silicon capacitor microphone is poor, cost is higher, provide a kind of highly sensitive, anti-impact force is strong, with low cost, be easy to the silicon capacitor microphone produced, and provide the manufacture method of above-mentioned silicon capacitor microphone simultaneously.
For reaching above-mentioned purpose, first the present invention proposes a kind of silicon capacitor microphone, comprise substrate, back pole plate and vibrating diaphragm, described vibrating diaphragm is between described substrate and described back pole plate, described substrate is provided with the operatic tunes, between described back pole plate and described vibrating diaphragm, be provided with fixedly air gap, on described vibrating diaphragm and described back pole plate, be respectively equipped with pad that electrode draws to be used as to be electrically connected, wherein said vibrating diaphragm is circular, its edge is totally-enclosed to be fixed in described substrate, on described vibrating diaphragm, comprise centre bore and the one or more fold rings concentric with described centre bore, described fold ring is positioned at the region that is equal to or greater than 1/2 vibrating diaphragm radius.
A kind of silicon capacitor microphone proposing according to the present invention, the material of wherein said vibrating diaphragm is conductive polycrystalline silicon, the technique by deposit realizes.
A kind of silicon capacitor microphone proposing according to the present invention, wherein said fold ring is one, it is shaped as epirelief or concave shape, between described fold ring and described vibrating diaphragm place plane, is provided with chamfering.
A kind of silicon capacitor microphone proposing according to the present invention, wherein said fold ring is a plurality of, be crisscross arranged for epirelief shape and concave shape each other, and between every two fold rings, be provided with transition plane, between adjacent described fold ring and described transition plane and between described fold ring and described vibrating diaphragm place plane, be provided with chamfering.
A kind of silicon capacitor microphone proposing according to the present invention, the diameter of wherein said centre bore is 0.2-200 micron.
A kind of silicon capacitor microphone proposing according to the present invention, the degree of depth of the quantity of the fold ring of wherein said vibrating diaphragm, the spacing between fold ring and fold ring is determined by thickness and the residual stress distribution scope of vibrating diaphragm.
A kind of silicon capacitor microphone proposing according to the present invention, has a plurality of perforates on wherein said back pole plate, and described back pole plate is provided with projection near the one side of described vibrating diaphragm.
In addition, the present invention also provides a kind of manufacture method of silicon capacitor microphone, comprises the following steps:
S1: at the surface deposition ground floor sacrifice layer of substrate, make described sacrifice layer there is fold annular shape;
S2: utilize depositing technics to form the vibrating diaphragm with fold ring on the surface of ground floor sacrifice layer, described vibrating diaphragm is optionally sheltered and etching, form the center ventilation circular hole of described vibrating diaphragm;
S3: at described vibrating diaphragm surface deposition second layer sacrifice layer, and second layer sacrifice layer is optionally sheltered and etching, to form the shape for lugs of back pole plate;
S4: utilize depositing technics to form on the surface of second layer sacrifice layer and be with bossed back pole plate, described back pole plate is optionally sheltered and etching, to form a plurality of perforation on described back pole plate;
S5: take described back pole plate as mask, etching second layer sacrifice layer, exposes the vibrating diaphragm layer of perforated portion below on back pole plate;
S6: make metallized backplane electrode and vibrating diaphragm electrode on the expose portion of back pole plate and vibrating diaphragm, backplane electrode and vibrating diaphragm electrode are made respectively to the electric pad of drawing and make;
S7: by optionally sheltering with etching to make the operatic tunes, the operatic tunes runs through whole substrate corresponding to the central area that vibrating diaphragm is set from substrate at substrate back;
S8: wet method is etching ground floor sacrifice layer and second layer sacrifice layer simultaneously, removes the ground floor sacrifice layer between substrate and the moving part of vibrating diaphragm, removes the moving part of vibrating diaphragm and the second layer sacrifice layer between backplane.
The manufacture method of a kind of silicon capacitor microphone proposing according to the present invention, wherein, in described step S1, the process of deposit ground floor sacrifice layer makes two bites at a cherry, and comprises the following steps:
S11: at the surface deposition forming section ground floor sacrifice layer of substrate, and optionally shelter and etching sacrificial layer, determine crimp shape, quantity, size and the distribution on vibrating diaphragm by this etching;
S12: on the basis of the part ground floor sacrifice layer forming at S11, deposit sacrifice layer again, complete the making of ground floor sacrifice layer, by the first etching sacrificial layer process sequence of deposit again, according to the surface configuration of earth silicon material after deposit, the angle that makes the interplanar transition face of fold and vibrating diaphragm place and vibrating diaphragm is obtuse angle, is provided with the chamfering that technique allows, and determines corresponding angle value by technological parameter between fold ring and the transition face of vibrating diaphragm place plane.
The manufacture method of a kind of silicon capacitor microphone proposing according to the present invention, wherein, the material of described sacrifice layer is silicon dioxide.
Compared with prior art, silicon capacitor microphone that the present invention proposes and preparation method thereof can improve silicon capacitor microphone to be subject to foreign impacts and to be subject to high pressure draught to blow the impact resistance while hitting, help vibrating diaphragm to discharge stress, improve internal stress consistency, make the sensitivity of silicon microphone more consistent, thereby improve the rate of finished products of product, reduce volume production cost, the application scenario of widening product.
Accompanying drawing explanation
Fig. 1, Fig. 2 are the conductive polycrystalline silicon diaphragm structure vertical view that existing band discharges stress part;
Fig. 3 is with the cutaway view of the vibrating diaphragm of pleated structure in prior art;
Fig. 4 A and Fig. 4 B are a kind of fold arrangement cross-sectional schematic and the schematic top plan view of first embodiment of the invention;
Fig. 5 A and Fig. 5 B are structure cross-sectional schematic and the schematic top plan view that the another kind of fold of first embodiment of the invention is arranged;
Fig. 6 A and Fig. 6 B are structure cross-sectional schematic and the schematic top plan view that another fold of first embodiment of the invention is arranged;
Fig. 7 A and Fig. 7 B are structure cross-sectional schematic and the schematic top plan view that a kind of fold of second embodiment of the invention is arranged;
Fig. 8 A and Fig. 8 B are structure cross-sectional schematic and the schematic top plan view that the another kind of fold of second embodiment of the invention is arranged;
Fig. 9 A and Fig. 9 B are structure cross-sectional schematic and the schematic top plan view that another fold of second embodiment of the invention is arranged.
Figure 10 is the schematic diagram of step S11 preparation process;
Figure 11 is the schematic diagram of step S12 preparation process;
Figure 12 is the schematic diagram of step S2 preparation process;
Figure 13, Figure 14 are the schematic diagram of step S3 preparation process;
Figure 15 is the schematic diagram of step S4 preparation process;
Figure 16 is the schematic diagram of step S5 preparation process;
Figure 17 is the schematic diagram of step S6 preparation process;
Figure 18 is the schematic diagram of step S7 preparation process;
Figure 19 is the schematic diagram of step S8 preparation process.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills are not making the every other embodiment obtaining under creative work prerequisite, all belong to the category of the present invention's protection.
At accompanying drawing 4 of the present invention, to each respective top of accompanying drawing 9, unification is used
represent anchor district, i.e. edge fixed bearing region; With
represent fold ring sloped region, use
represent to comprise the plane domain of transition plane and vibrating diaphragm center corrugationless region, center hole is white.
First referring to Fig. 4, is the structural representation that a kind of fold of first embodiment of the invention is arranged, and wherein Fig. 4 A is cutaway view, and Fig. 4 B is vertical view.In this embodiment, the present invention includes back pole plate (not shown), vibrating diaphragm 10 and substrate 11, is totally-enclosed being fixedly connected with between vibrating diaphragm 10 and substrate 11, blows while hitting like this when being subject to foreign impacts or high pressure draught, guarantee that the present invention is difficult for losing efficacy, maintain normal operating conditions.Wherein, vibrating diaphragm 10 is made by depositing technics by conductive polycrystalline silicon material, is shaped as round sheet, because circle is axisymmetric shape, contributes to residual stress distribution more even, can improve the consistency of product.Vibrating diaphragm 10 thickness are between 0.1～2 micron, because if vibrating diaphragm 10 thickness are too thin, residual stress distribution is inhomogeneous, and the deformation of vibrating diaphragm 10 is uncontrollable; If vibrating diaphragm 10 thickness are too thick, sensitivity is lower, is difficult to reach application request.Vibrating diaphragm 10 center has the ventilation circular hole 14 that diameter is 0.2-200 micron, can effectively reduce and blow the pressure to vibrating diaphragm 10 while hitting.It is for wind load is uniformly distributed that ventilation circular hole 14 is selected axisymmetric circle; It is because theory analysis points out that the effect of easing stress that hole is arranged on is herein best that ventilation circular hole 14 is placed in to vibrating diaphragm 10 centers.The diameter of described ventilation circular hole 14 is 0.2-200 micron, the effect that reduces pressure that do not have as too little in diameter, and it is more that diameter too greatly loses sensitivity.On vibrating diaphragm 10, be also provided with a fold ring 12, the object that fold is set in the present invention is not simple release stress, but makes the wider polysilicon vibrating diaphragm 10 of residual stress distribution in statistical significance, and after Stress Release, sensitivity more reaches unanimity.In the specific embodiment of Fig. 3, fold ring 12 is the shape that upwards arches upward, concentric and be positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm 10 radiuses with ventilation circular hole 14, thereby makes the central body region 13 of vibrating diaphragm 10 become bulge-structure.Adopting said structure is because concentric fold ring can keep compatibility of deformation consistent, is conducive to the release of stress; If consistency to sensitivity is produced to adverse influence at circular membrane 10 radiuses 1/2 with the interior fold that arranges, due to what the present invention pursued, be homogeneity of product but not reduce merely stress, therefore at respective regions, fold is not set.When having sound wave to act on vibrating diaphragm 10, on vibrating diaphragm 10, produce stress, vibrating diaphragm 10 center corrugationless parts are moved up after Stress Release; When residual stress is larger, vibrating diaphragm 10 rigidity are larger like this, and sensitivity has the variation reducing, but vibrating diaphragm 10 move up after from backplane (not shown) more close to, nominal electric capacity increases, sensitivity has again the variation of increase; In like manner in residual stress, compared with hour sensitivity, have the variation of increase because rigidity is less, but nominal electric capacity diminishes and make it have the variation reducing, total the sensitivity that sensitivity therefore changes with primary stress reduces, homogeneity of product can be improved thus.In addition, from the cutaway view of Fig. 4 A, can find out, fold ring 12 is obtuse angle with the angle of vibrating diaphragm 10 place planes, between fold ring 12 and vibrating diaphragm 10 place planes, on transition face, be provided with the chamfering that technique allows, thereby it is consistent to make fold more be conducive to compatibility of deformation when the release of residual stress, is conducive to Stress Release.
Please continue to refer to Fig. 5, be the structural representation that the another kind of fold of first embodiment of the invention is arranged, wherein Fig. 5 A is cutaway view, Fig. 5 B is vertical view.Different from Fig. 4, this fold arrangement mode is two fold rings 12, and these two fold rings 12 are all positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm 10 radiuses.As shown in Figure 5A, according to order from outside to inside, described two fold rings 12 are first recessed, then epirelief, thereby guarantee that central body region 13 is still bulge-structure.Between two fold rings, be provided with transition plane 15, between described transition plane 15 and adjacent fold ring 12, form obtuse angle, and transition plane 15 is provided with the junction of fold ring 12 chamfering that technique allows, to guarantee compatibility of deformation consistency.And, from Fig. 5 A, can find out, adjacent two fold rings 12 stretch out from the two ends symmetry of transition plane 15 respectively, make transition plane 15 and two fold rings 12 being attached thereto between on section, form isosceles-trapezium-shaped.This constructor makes a concerted effort to learn equilibrium principle, can bear impulsive force significantly, and is more conducive to Stress Release.
Fig. 6 is the structural representation that another fold of first embodiment of the invention is arranged, and wherein Fig. 6 A is cutaway view, and Fig. 6 B is vertical view.In the fold arrangement mode shown in Fig. 6, vibrating diaphragm 10 is provided with three fold rings 12, and these three fold rings 12 are all positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm 10 radiuses.As shown in Figure 6A, according to order from outside to inside, described three first epireliefs of fold ring 12, recessed and then epirelief again, take that this defines central body region 13 as bulge-structure.Between above-mentioned three fold rings 12, be provided with two transition plane 15, between adjacent fold ring 12 and transition plane 15, form obtuse angle.Same, fold ring 12 and the transition plane 15 being adjacent are provided with the chamfering that technique allows in junction.
Fig. 7 is the structural representation that a kind of fold of second embodiment of the invention is arranged, and wherein Fig. 7 A is cutaway view, and Fig. 7 B is vertical view.In this embodiment, the present invention includes back pole plate (not shown), vibrating diaphragm 20 and substrate 21, is totally-enclosed being fixedly connected with between vibrating diaphragm 20 and substrate 21, blows while hitting guaranteeing when the present invention is subject to foreign impacts or high pressure draught, in structure, can not lose efficacy.Wherein, vibrating diaphragm 20 is made by depositing technics by conductive polycrystalline silicon material, is shaped as round sheet, and center has the ventilation circular hole 24 that diameter is 0.2-200 micron, further to guarantee anti-the hitting property of blowing of vibrating diaphragm 20.On vibrating diaphragm 20, be also provided with a fold ring 22, this fold ring 22 is concave shape, concentric and be positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm 20 radiuses with ventilation circular hole 24, thereby makes the central body region 23 of vibrating diaphragm 20 become sunk structure.When having sound wave to act on vibrating diaphragm 20, on vibrating diaphragm 20, produce stress, body region 23 centered by the main crushed element of vibrating diaphragm 20; After Stress Release, main crushed element moves upward, and vibrating diaphragm 1 and back pole plate distance are reduced, thus the higher situation of original rigidity before counteracting vibrating diaphragm release stress.In addition, fold ring 22 is obtuse angle with the angle of vibrating diaphragm 20 place planes, is provided with the chamfering that technique allows between fold ring 22 and vibrating diaphragm 20 place planes on transition face.
Fig. 8 is the structural representation that the another kind of fold of second embodiment of the invention is arranged, and wherein Fig. 8 A is cutaway view, and Fig. 8 B is vertical view.Be with Fig. 7 difference, the fold arrangement mode in Fig. 8 comprises three fold rings 22, and these three fold rings 22 are all positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm 20 radiuses.As shown in Figure 8 A, according to order from outside to inside, described three fold rings 22 are recessed, epirelief and then recessed more first, take that this defines central body region 13 as sunk structure.Between above-mentioned three fold rings 22, be provided with two transition plane 25, between described transition plane 25 and adjacent fold ring 22, form obtuse angle, and the junction of transition plane 25 and fold ring 22 is provided with the chamfering that technique allows, and to guarantee compatibility of deformation consistency, is further conducive to Stress Release.
Fig. 9 is the structural representation that another fold of second embodiment of the invention is arranged, and wherein Fig. 9 A is cutaway view, and Fig. 9 B is vertical view.In the fold arrangement mode shown in Fig. 9, vibrating diaphragm 20 is provided with four fold rings 22, and these four fold rings 22 are all positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm 20 radiuses.As shown in Figure 9 A, according to order from outside to inside, described four first epireliefs of fold ring 22, recessed, epirelief, finally recessed more again, take that this defines central body region 13 as sunk structure.Between above-mentioned four fold rings 22, be provided with three transition plane 25, between described transition plane 25 and adjacent fold ring 22, form obtuse angle, same, the junction of transition plane 25 and fold ring 22 is also provided with the chamfering that technique allows.
It should be noted that, the present invention mainly discharges the stress on vibrating diaphragm by fold ring structure.Fold ring structure of the present invention is not limited to above-mentioned disclosed arrangement mode, as long as it is concentric to meet all fold Huan Yu center ventilation circular hole, and is positioned at the region that is equal to, or greater than 1/2 vibrating diaphragm radius.In addition, quantity, the different spacing between fold ring, depth of folding that fold ring is set on vibrating diaphragm 10 or 20 need be determined according to the thickness of vibrating diaphragm 10 or 20 and residual stress distribution scope when design, and these parameters can realize with universal means in corresponding preparation method.
In addition, the invention allows for the manufacture method of above-mentioned silicon capacitor microphone, as shown in Figure 10-Figure 19, comprise the following steps:
S11: in the surface deposition silicon dioxide sacrificial layer of substrate 201, forming section ground floor sacrifice layer 202 is also optionally sheltered and etching sacrificial layer, determines crimp shape, quantity, size and the distribution on vibrating diaphragm 203 by this etching;
S12: on the basis of the part ground floor sacrifice layer 202 forming at S11, deposit silicon dioxide sacrificial layer again, complete the making of ground floor sacrifice layer 202, by the first etching sacrificial layer process sequence of deposit again, utilize the surface configuration of earth silicon material after deposit, the angle of guaranteeing fold and the vibrating diaphragm 203 interplanar transition faces in place and vibrating diaphragm 203 is obtuse angle, between annular fold and vibrating diaphragm 203 place planes, between transition face, be provided with the chamfering that technique allows, and determine corresponding angle value by technological parameter; The complete ground floor sacrifice layer 202 of first disposable deposit, then its surface of etching else if, cannot guarantee corresponding obtuse angle and chamfering on vibrating diaphragm 203;
S2: also optionally shelter and its centers ventilation circular hole of etching vibrating diaphragm 203 making at the surface deposition vibrating diaphragm 203 of ground floor sacrifice layer, utilize the shape of ground floor sacrifice layer to form fold, obtain vibrating diaphragm 203 structures;
S3: at the surface deposition second layer sacrifice layer 204 of vibrating diaphragm 203, and second layer sacrifice layer 204 is optionally sheltered and etching, for the follow-up projection of preparing back pole plate 205 belows is prepared;
S4: at the surface deposition back pole plate 205 of second layer sacrifice layer 204, utilize the shape of second layer sacrifice layer 204 to form projection, and optionally shelter and etching back pole plate 205, form a plurality of perforation to reach good performance on back pole plate 205, back pole plate 205 is arranged on to vibrating diaphragm 203 tops, like this can vibrating diaphragm 203 moving parts be subject to from below blow hit deform and displacement after come on back pole plate 205 while moving up, thereby play 203 effects of protection vibrating diaphragm, simultaneously by setting in advance the projection on back pole plate 205, can make vibrating diaphragm 203 moving parts be subject to external heavy load deform and displacement and back pole plate 205 top after, after removing, extraneous load can be retracted original normal operation position by structural elasticity restoring force, thereby avoid making because face contact surface power is excessive vibrating diaphragm 203 to adhere to and cause making structural failure with back pole plate 205,
S5: take back pole plate 205 as mask, etching second layer sacrifice layer 204, makes 203 layers of exposure of vibrating diaphragm of perforated portion below on back pole plate 205;
S6: the expose portion on back pole plate 205 and vibrating diaphragm 203, make metallic electrode, vibrating diaphragm 203 electrodes 206 and backplane electrode 207 are made respectively to the electric pad of drawing and make;
S7: optionally shelter and etching at substrate 201 back sides, make the operatic tunes, the operatic tunes runs through whole substrate corresponding to the central area that vibrating diaphragm 203 is set from substrate; Blowing of being subject to when the acoustic pressure load of normal work and non-normal working hit load all to be needed to be added on vibrating diaphragm 203 through the operatic tunes;
S8: wet method is etching ground floor sacrifice layer 202 and second layer sacrifice layer 204 simultaneously, remove the ground floor sacrifice layer 202 between substrate 201 and the moving part of vibrating diaphragm 203, second layer sacrifice layer 204 between removal vibrating diaphragm 203 moving parts and back pole plate 205, releasing structure.
In sum, the silicon capacitor microphone consisting of conductive polycrystalline silicon vibrating diaphragm that the present invention proposes has higher reliability and consistency, with low cost, in technique, easily realizes, can determine concrete diaphragm structure form and dimensional parameters according to other concrete valuess of the structural parameters, be applicable to producing in enormous quantities.
The above description of this invention is illustrative, and nonrestrictive, and those skilled in the art is understood, and can carry out many modifications, variation or equivalence to it, but they all will fall within the scope of protection of the present invention in claim within the spirit limiting and scope.
Claims (10)
1. a silicon capacitor microphone, comprise substrate, back pole plate and vibrating diaphragm, described vibrating diaphragm is between described substrate and described back pole plate, described substrate is provided with the operatic tunes, between described back pole plate and described vibrating diaphragm, be provided with fixedly air gap, on described vibrating diaphragm and described back pole plate, be respectively equipped with pad that electrode draws to be used as to be electrically connected, it is characterized in that, described vibrating diaphragm is circular, its edge is totally-enclosed to be fixed in described substrate, on described vibrating diaphragm, comprise centre bore and the one or more fold rings concentric with described centre bore, described fold ring is positioned at the region that is equal to or greater than 1/2 vibrating diaphragm radius.
2. a kind of silicon capacitor microphone according to claim 1, is characterized in that, the material of described vibrating diaphragm is conductive polycrystalline silicon, and the technique by deposit realizes.
3. a kind of silicon capacitor microphone according to claim 1, is characterized in that, described fold ring is one, and it is shaped as epirelief or concave shape, between described fold ring and described vibrating diaphragm place plane, is provided with chamfering.
4. a kind of silicon capacitor microphone according to claim 1, it is characterized in that, described fold ring is a plurality of, be crisscross arranged for epirelief shape and concave shape each other, and between two adjacent fold rings, be provided with transition plane, between adjacent described fold ring and described transition plane and between described fold ring and described vibrating diaphragm place plane, be provided with chamfering.
5. a kind of silicon capacitor microphone according to claim 1, is characterized in that, the diameter of described centre bore is 0.2-200 micron.
6. a kind of silicon capacitor microphone according to claim 1, is characterized in that, the degree of depth of the quantity of the fold ring of described vibrating diaphragm, the spacing between fold ring and fold ring is determined by thickness and the residual stress distribution scope of vibrating diaphragm.
7. a kind of silicon capacitor microphone according to claim 1, is characterized in that, has a plurality of perforates on described back pole plate, and described back pole plate is provided with projection near the one side of described vibrating diaphragm.
8. a manufacture method for silicon capacitor microphone, is characterized in that, comprises the following steps:
S1: the surface deposition at substrate is made ground floor sacrifice layer, makes described sacrifice layer have fold annular shape;
S2: utilize depositing technics to form the vibrating diaphragm with fold ring on the surface of ground floor sacrifice layer, described vibrating diaphragm is optionally sheltered and etching, form the center ventilation circular hole of described vibrating diaphragm;
S3: at described vibrating diaphragm surface deposition second layer sacrifice layer, and second layer sacrifice layer is optionally sheltered and etching, to form the shape for lugs of back pole plate;
S4: utilize depositing technics to form on the surface of second layer sacrifice layer and be with bossed back pole plate, described back pole plate is optionally sheltered and etching, to form a plurality of perforation on described back pole plate;
S5: take described back pole plate as mask, etching second layer sacrifice layer, exposes the vibrating diaphragm layer of perforated portion below on back pole plate;
S6: make metallized backplane electrode and vibrating diaphragm electrode on the expose portion of back pole plate and vibrating diaphragm, backplane electrode and vibrating diaphragm electrode are made respectively to the electric pad of drawing and make;
S7: by optionally sheltering with etching to make the operatic tunes, the operatic tunes runs through whole substrate corresponding to the central area that vibrating diaphragm is set from substrate at substrate back;
S8: wet method is etching ground floor sacrifice layer and second layer sacrifice layer simultaneously, removes the ground floor sacrifice layer between substrate and the moving part of vibrating diaphragm, removes the moving part of vibrating diaphragm and the second layer sacrifice layer between backplane.
9. the manufacture method of a kind of silicon capacitor microphone according to claim 8, is characterized in that, in described step S1, the process of deposit ground floor sacrifice layer makes two bites at a cherry, and comprises the following steps:
S11: at the surface deposition forming section ground floor sacrifice layer of substrate, and optionally shelter and etching sacrificial layer, determine crimp shape, quantity, size and the distribution on vibrating diaphragm by this etching;
S12: on the basis of the part ground floor sacrifice layer forming at S11, deposit sacrifice layer again, complete the making of ground floor sacrifice layer, by the first etching sacrificial layer process sequence of deposit again, according to the surface configuration of earth silicon material after deposit, the angle that makes the interplanar transition face of fold and vibrating diaphragm place and vibrating diaphragm is obtuse angle, is provided with the chamfering that technique allows, and determines corresponding angle value by technological parameter between fold ring and the transition face of vibrating diaphragm place plane.
10. the manufacture method of a kind of silicon capacitor microphone according to claim 8, is characterized in that, the material of described sacrifice layer is silicon dioxide.
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| CN104507014A (en) * | 2014-12-26 | 2015-04-08 | 上海集成电路研发中心有限公司 | MEMS microphone with fold-type vibrating film and manufacturing method of microphone |
| CN106608614A (en) * | 2015-10-21 | 2017-05-03 | 北京卓锐微技术有限公司 | Manufacturing method of MEMS structure |
| CN106688246A (en) * | 2015-03-12 | 2017-05-17 | 欧姆龙株式会社 | Electrostatic capacitance type transducer and acoustic sensor |
| CN106851509A (en) * | 2017-03-06 | 2017-06-13 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
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