CN203368757U - MEMS microphone possessing reinforcement structure - Google Patents
MEMS microphone possessing reinforcement structure Download PDFInfo
- Publication number
- CN203368757U CN203368757U CN 201320452760 CN201320452760U CN203368757U CN 203368757 U CN203368757 U CN 203368757U CN 201320452760 CN201320452760 CN 201320452760 CN 201320452760 U CN201320452760 U CN 201320452760U CN 203368757 U CN203368757 U CN 203368757U
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- Prior art keywords
- mems microphone
- backboard
- perforation backboard
- substrate
- brace summer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 230000002787 reinforcement Effects 0.000 title abstract 4
- 239000011148 porous material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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Abstract
The utility model provides an MEMS microphone possessing a reinforcement structure. The MEMS microphone possessing the reinforcement structure comprises a pedestal in which a dorsal pore is formed; a perforated backboard supported on the pedestal and arranged above the dorsal pore in the pedestal; a diaphragm arranged above the perforated backboard; and an air gap formed between the perforated backboard and the diaphragm, wherein a supporting beam is formed in the dorsal pore of the pedestal and supports the side wall of the dorsal pore, and at least one part of the supporting beam is contacted with the lower surface of the perforated backboard. The MEMS microphone possessing the reinforcement structure can prevent the perforated backboard from breaking due to falling off or atmospheric circulation during the use process.
Description
Technical field
The utility model relates to the microphone techniques field, specifically, relates to a kind of MEMS microphone with reinforced structure.
Background technology
The MEMS microphone, particularly silica-based MEMS microphone, researched and developed for many years.The MEMS microphone is potential advantages aspect miniaturization, performance, reliability, environmental durability, cost and mass production capabilities and in can being widely used for many application, such as mobile phone, panel computer, camera, hearing aids, intelligent toy and monitoring arrangement due to it.
In general, the MEMS microphone comprises and is formed on suprabasil vibrating diaphragm and perforation backboard, and vibrating diaphragm and perforation backboard are formed with air gap between it, and form the variable air gap capacitor.In some MEMS microphones, vibrating diaphragm is below the perforation backboard, and, in other MEMS, the perforation backboard is below vibrating diaphragm.Vibrating diaphragm in below or perforation backboard expose to outside by the dorsal pore be formed in substrate.Fig. 1 is cutaway view, shows the structure of existing a kind of MEMS microphone.As shown in Figure 1, existing a kind of MEMS microphone 100 comprises substrate 10, perforation backboard 30, separator 40 and vibrating diaphragm 50, wherein, between substrate 10 and perforation backboard 30, can also have lining 20; Be formed with dorsal pore 11 in substrate 10, so that the backboard 30 of boring a hole exposes; Be formed with perforation 31 in perforation backboard 30, in order to make air-flow can not make its vibration-generating by perforation backboard 30 and by perforation backboard 30 time; Be formed with 41， air gap, air gap 41 and using separator 40 as border between perforation backboard 30 and vibrating diaphragm 50.Perforation backboard 30 and vibrating diaphragm 50 form a capacitor as two battery lead plates, and when vibrating diaphragm 50 vibrates under sound wave effect, the electric capacity of this capacitor changes thereupon, thereby acoustic wave energy can be converted into to electric energy, to realize the detection to sound wave.
In this MEMS microphone, because perforation is formed with a plurality of perforation 31 on backboard 30, therefore, its structural strength relatively a little less than, in the use procedure of this MEMS microphone, due to fall or air flow by causing at an easy rate the fragmentation of perforation backboard 30.
The utility model content
The utility model is made in order to solve above-mentioned problems of the prior art, its purpose is to provide a kind of MEMS microphone with reinforced structure, with solve this MEMS microphone in use due to fall or air flow by causing the problem of perforation backboard fragmentation.
In order to address the above problem, the utility model provides a kind of MEMS microphone with reinforced structure, and it comprises: substrate is formed with dorsal pore in this substrate; The perforation backboard, this perforation backboard is supported in described substrate and is arranged on the top of the dorsal pore in described substrate; Vibrating diaphragm, this vibrating diaphragm is arranged on the top of described perforation backboard; And air gap; This air gap is formed between described perforation backboard and described vibrating diaphragm, wherein, form brace summer in the dorsal pore of described substrate, described brace summer is supported on the sidewall of described dorsal pore, and at least a portion of described brace summer contacts with the lower surface of described perforation backboard.
Preferably, described substrate can be silicon base, and described perforation backboard can by be layered on described silicon base and and this silicon base between accompany the silicon device layer of oxide layer a part form.
Perhaps, preferably, described perforation backboard can be formed by polysilicon.
Preferably, described brace summer can be one or more in a word beam, a plurality of parallel Yi Ziliang, rood beam, cross beam and Y shape beam.
In an example, described brace summer can be rood beam, and the cross part of this rood beam contacts with the lower surface of described perforation backboard.
In another example, described brace summer can be rood beam, and the whole upper surface of this rood beam contacts with the lower surface of described perforation backboard.
Advantage with MEMS microphone of reinforced structure described in the utility model is, owing to being wholely set brace summer to support the perforation backboard in the suprabasil dorsal pore of this MEMS microphone, therefore, the structure of backboard of can making to bore a hole is strengthened, thus can prevent MEMS microphone described in the utility model in use due to fall or air flow by the perforation backboard fragmentation caused.
The accompanying drawing explanation
Fig. 1 is cutaway view, shows the structure of existing a kind of MEMS microphone;
Fig. 2 is cutaway view, shows the structure of a described MEMS microphone of embodiment of the present utility model;
Fig. 3 is perspective view, shows the support beam structure in the described MEMS microphone of an embodiment substrate dorsal pore of the present utility model; And
Fig. 4 is perspective view, shows the support beam structure in the described MEMS microphone of another embodiment of the present utility model substrate dorsal pore.Wherein, in the accompanying drawings,
100: existing MEMS microphone;
200: the described MEMS microphone of an embodiment of the present utility model;
10: substrate; 11: dorsal pore
20: lining;
30: the perforation backboard; 31: perforation;
40: separator; 41: air gap;
50: vibrating diaphragm;
60: brace summer.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described in detail.
In the following description, only by the mode of explanation, some example embodiment of the present utility model has been described.Undoubtedly, those of ordinary skill in the art can recognize, in the situation that do not depart from spirit and scope of the present utility model, can to described embodiment, be revised by various mode.Therefore, accompanying drawing is illustrative with being described in essence, rather than for limiting the protection range of claim.In this manual, when being known as when another layer or zone " on " or " under " in a layer or zone, it can be " directly " can be also " indirectly " on this another layer or zone or under, can have one or more intermediate layers between the two.In addition, in this manual, identical Reference numeral means same or analogous part.
Fig. 2 is schematic diagram, shows the structure of a described MEMS microphone of embodiment of the present utility model.As shown in Figure 2, the described MEMS microphone 200 of an embodiment of the present utility model comprises that substrate 10, perforation backboard 30, vibrating diaphragm 50 and the 41， air gap, air gap 41 be formed between perforation backboard 30 and vibrating diaphragm 50 using separator 40 as border.
Be formed with dorsal pore 11 in substrate 10.Usually, can adopt silicon base to do substrate 10.
Be formed with perforation 31 in perforation backboard 30.Perforation backboard 30 is supported in substrate 10 and is arranged on the top of the dorsal pore 11 in substrate 10.Preferably, can also form lining 20 between substrate 10 and perforation backboard 30.In the situation of silicon base MEMS microphone, perforation backboard 30 can by be layered on silicon base and and this silicon base between accompany the silicon device layer of oxide layer a part form.In other words, can utilize silicon insulating barrier in the SOI wafer as substrate 10, utilize the part of the silicon device layer in the SOI wafer as perforation backboard 30, utilize oxide skin(coating) in the SOI wafer as lining 20.In addition, also can utilize the polysilicon layer that is deposited on substrate 10 or lining 20 as perforation backboard 30.
Vibrating diaphragm 50 is arranged on the top of perforation backboard 30, between perforation backboard 30 and vibrating diaphragm 50, is formed with air gap 41.
Especially, in the present embodiment, in the dorsal pore 11 of substrate 10, be formed with brace summer 60, brace summer 60 is supported on the sidewall of dorsal pore 11, and at least a portion of brace summer contact with the lower surface of perforation backboard 30, in order to the backboard 30 of boring a hole is supported.
The number of brace summer 60 and form are not done special restriction.Can be one or more beams in Yi Ziliang, a plurality of parallel Yi Ziliang, rood beam, cross beam, Y shape beam.
Fig. 3 and Fig. 4 are perspective views, show respectively two examples of the support beam structure in the substrate dorsal pore of MEMS microphone described in the utility model.
In an example, as shown in Figure 3, brace summer 60 is rood beam, and this rood beam 60 only has cross part 61 to contact with the lower surface of perforation backboard 30.In another example, as shown in Figure 4, brace summer 60 is rood beam, and the whole upper surface of this rood beam 60 contacts with the lower surface of perforation backboard 30.
In the situation of silica-based MEMS microphone, brace summer 60 can utilize controlled deep trouth reactive ion etching to form when forming silicon base dorsal pore 11.
Narration from front, advantage with MEMS microphone of reinforced structure described in the utility model is, owing to being wholely set brace summer to support the perforation backboard in the suprabasil dorsal pore of this MEMS microphone, therefore, the structure of backboard of can making to bore a hole is strengthened, thus can prevent MEMS microphone described in the utility model in use due to fall or air flow by the perforation backboard fragmentation caused.
Should be noted that those of skill in the art can carry out various improvement, distortion and combination on the basis of above-described embodiment, and these improvement, distortion and combination are also all within protection range of the present utility model.Should be understood that above-mentioned specific descriptions just are used for illustrating the utility model, protection range of the present utility model is limited by appended claims and equivalent thereof.
Claims (6)
1. the MEMS microphone with reinforced structure, is characterized in that,
Substrate is formed with dorsal pore in this substrate;
The perforation backboard, this perforation backboard is supported in described substrate and is arranged on the top of the dorsal pore in described substrate;
Vibrating diaphragm, this vibrating diaphragm is arranged on the top of described perforation backboard; And
Air gap; This air gap is formed between described perforation backboard and described vibrating diaphragm,
Wherein, in the dorsal pore of described substrate, form brace summer, described brace summer is supported on the sidewall of described dorsal pore, and at least a portion of described brace summer contacts with the lower surface of described perforation backboard.
2. the MEMS microphone with reinforced structure as claimed in claim 1, is characterized in that,
Described substrate is silicon base, and described perforation backboard by be layered on described silicon base and and this silicon base between accompany the silicon device layer of oxide layer a part form.
3. the MEMS microphone with reinforced structure as claimed in claim 1, is characterized in that,
Described perforation backboard is formed by polysilicon.
4. the MEMS microphone with reinforced structure as claimed in claim 1, is characterized in that,
Described brace summer is one or more in a word beam, a plurality of parallel Yi Ziliang, rood beam, cross beam and Y shape beam.
5. the MEMS microphone with reinforced structure as claimed in claim 4, is characterized in that,
Described brace summer is rood beam, and the cross part of this rood beam contacts with the lower surface of described perforation backboard.
6. the MEMS microphone with reinforced structure as claimed in claim 4, is characterized in that,
Described brace summer is rood beam, and the whole upper surface of this rood beam contacts with the lower surface of described perforation backboard.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320452760 CN203368757U (en) | 2013-07-26 | 2013-07-26 | MEMS microphone possessing reinforcement structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320452760 CN203368757U (en) | 2013-07-26 | 2013-07-26 | MEMS microphone possessing reinforcement structure |
Publications (1)
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|---|---|
| CN203368757U true CN203368757U (en) | 2013-12-25 |
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|---|---|---|---|
| CN 201320452760 Expired - Lifetime CN203368757U (en) | 2013-07-26 | 2013-07-26 | MEMS microphone possessing reinforcement structure |
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| CN (1) | CN203368757U (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105848075A (en) * | 2015-01-15 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro Electro Mechanical Systems) device, manufacturing method thereof and electronic device |
| CN106535072A (en) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | MEMS microphone chip and MEMS microphone |
| GB2555412A (en) * | 2016-10-25 | 2018-05-02 | Atlantic Inertial Systems Ltd | Inertial sensor |
| CN108569672A (en) * | 2017-03-13 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
| CN109151689A (en) * | 2017-06-27 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
| CN110366089A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN110545511A (en) * | 2019-08-16 | 2019-12-06 | 瑞声声学科技(深圳)有限公司 | Piezoelectric MEMS microphone |
| WO2021051854A1 (en) * | 2019-09-18 | 2021-03-25 | 无锡华润上华科技有限公司 | Mems microphone and preparation method therefor |
| CN112823532A (en) * | 2018-10-05 | 2021-05-18 | 美商楼氏电子有限公司 | Microphone arrangement with inlet guard |
| CN113556657A (en) * | 2021-06-29 | 2021-10-26 | 歌尔微电子股份有限公司 | MEMS microphone |
-
2013
- 2013-07-26 CN CN 201320452760 patent/CN203368757U/en not_active Expired - Lifetime
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105848075A (en) * | 2015-01-15 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro Electro Mechanical Systems) device, manufacturing method thereof and electronic device |
| GB2555412A (en) * | 2016-10-25 | 2018-05-02 | Atlantic Inertial Systems Ltd | Inertial sensor |
| EP3315460A1 (en) * | 2016-10-25 | 2018-05-02 | Atlantic Inertial Systems Limited | Inertial sensor |
| US11111132B2 (en) | 2016-10-25 | 2021-09-07 | Atlantic Inertial Systems Limited | Micro electromechanical systems (MEMS)inertial sensor |
| CN106535072A (en) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | MEMS microphone chip and MEMS microphone |
| WO2018103208A1 (en) * | 2016-12-05 | 2018-06-14 | 歌尔股份有限公司 | Mems microphone chip, and mems microphone |
| CN108569672B (en) * | 2017-03-13 | 2020-08-25 | 中芯国际集成电路制造(上海)有限公司 | Microphone and method for manufacturing the same |
| CN108569672A (en) * | 2017-03-13 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
| CN109151689A (en) * | 2017-06-27 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
| CN110366089A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN110366089B (en) * | 2018-04-11 | 2021-02-23 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
| CN112823532A (en) * | 2018-10-05 | 2021-05-18 | 美商楼氏电子有限公司 | Microphone arrangement with inlet guard |
| CN112823532B (en) * | 2018-10-05 | 2022-05-31 | 美商楼氏电子有限公司 | Microphone arrangement with inlet guard |
| CN110545511A (en) * | 2019-08-16 | 2019-12-06 | 瑞声声学科技(深圳)有限公司 | Piezoelectric MEMS microphone |
| CN110545511B (en) * | 2019-08-16 | 2021-05-07 | 瑞声声学科技(深圳)有限公司 | Piezoelectric MEMS microphone |
| WO2021051854A1 (en) * | 2019-09-18 | 2021-03-25 | 无锡华润上华科技有限公司 | Mems microphone and preparation method therefor |
| US12022270B2 (en) | 2019-09-18 | 2024-06-25 | Csmc Technologies Fab2 Co., Ltd. | MEMS microphone and preparation method therefor |
| CN113556657A (en) * | 2021-06-29 | 2021-10-26 | 歌尔微电子股份有限公司 | MEMS microphone |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200612 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: No.268, Dongfang Road, high tech Industrial Development Zone, Weifang City, Shandong Province Patentee before: GOERTEK Inc. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131225 |