CN203368757U - MEMS microphone possessing reinforcement structure - Google Patents
MEMS microphone possessing reinforcement structure Download PDFInfo
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- CN203368757U CN203368757U CN 201320452760 CN201320452760U CN203368757U CN 203368757 U CN203368757 U CN 203368757U CN 201320452760 CN201320452760 CN 201320452760 CN 201320452760 U CN201320452760 U CN 201320452760U CN 203368757 U CN203368757 U CN 203368757U
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- 230000002787 reinforcement Effects 0.000 title abstract 4
- 239000011148 porous material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 150000003376 silicon Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000013467 fragmentation Methods 0.000 description 4
- 238000006062 fragmentation reaction Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
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CN 201320452760 CN203368757U (en) | 2013-07-26 | 2013-07-26 | MEMS microphone possessing reinforcement structure |
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CN 201320452760 CN203368757U (en) | 2013-07-26 | 2013-07-26 | MEMS microphone possessing reinforcement structure |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105848075A (en) * | 2015-01-15 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro Electro Mechanical Systems) device, manufacturing method thereof and electronic device |
CN106535072A (en) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | MEMS microphone chip and MEMS microphone |
GB2555412A (en) * | 2016-10-25 | 2018-05-02 | Atlantic Inertial Systems Ltd | Inertial sensor |
CN108569672A (en) * | 2017-03-13 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
CN109151689A (en) * | 2017-06-27 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
CN110366089A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
CN110545511A (en) * | 2019-08-16 | 2019-12-06 | 瑞声声学科技(深圳)有限公司 | Piezoelectric MEMS microphone |
WO2021051854A1 (en) * | 2019-09-18 | 2021-03-25 | 无锡华润上华科技有限公司 | Mems microphone and preparation method therefor |
CN112823532A (en) * | 2018-10-05 | 2021-05-18 | 美商楼氏电子有限公司 | Microphone arrangement with inlet guard |
CN113556657A (en) * | 2021-06-29 | 2021-10-26 | 歌尔微电子股份有限公司 | MEMS microphone |
-
2013
- 2013-07-26 CN CN 201320452760 patent/CN203368757U/en not_active Expired - Lifetime
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105848075A (en) * | 2015-01-15 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | MEMS (Micro Electro Mechanical Systems) device, manufacturing method thereof and electronic device |
GB2555412A (en) * | 2016-10-25 | 2018-05-02 | Atlantic Inertial Systems Ltd | Inertial sensor |
EP3315460A1 (en) * | 2016-10-25 | 2018-05-02 | Atlantic Inertial Systems Limited | Inertial sensor |
US11111132B2 (en) | 2016-10-25 | 2021-09-07 | Atlantic Inertial Systems Limited | Micro electromechanical systems (MEMS)inertial sensor |
CN106535072A (en) * | 2016-12-05 | 2017-03-22 | 歌尔股份有限公司 | MEMS microphone chip and MEMS microphone |
WO2018103208A1 (en) * | 2016-12-05 | 2018-06-14 | 歌尔股份有限公司 | Mems microphone chip, and mems microphone |
CN108569672B (en) * | 2017-03-13 | 2020-08-25 | 中芯国际集成电路制造(上海)有限公司 | Microphone and method for manufacturing the same |
CN108569672A (en) * | 2017-03-13 | 2018-09-25 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
CN109151689A (en) * | 2017-06-27 | 2019-01-04 | 中芯国际集成电路制造(上海)有限公司 | microphone and its manufacturing method |
CN110366089A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
CN110366089B (en) * | 2018-04-11 | 2021-02-23 | 中芯国际集成电路制造(上海)有限公司 | MEMS device and preparation method thereof |
CN112823532A (en) * | 2018-10-05 | 2021-05-18 | 美商楼氏电子有限公司 | Microphone arrangement with inlet guard |
CN112823532B (en) * | 2018-10-05 | 2022-05-31 | 美商楼氏电子有限公司 | Microphone arrangement with inlet guard |
CN110545511A (en) * | 2019-08-16 | 2019-12-06 | 瑞声声学科技(深圳)有限公司 | Piezoelectric MEMS microphone |
CN110545511B (en) * | 2019-08-16 | 2021-05-07 | 瑞声声学科技(深圳)有限公司 | Piezoelectric MEMS microphone |
WO2021051854A1 (en) * | 2019-09-18 | 2021-03-25 | 无锡华润上华科技有限公司 | Mems microphone and preparation method therefor |
US12022270B2 (en) | 2019-09-18 | 2024-06-25 | Csmc Technologies Fab2 Co., Ltd. | MEMS microphone and preparation method therefor |
CN113556657A (en) * | 2021-06-29 | 2021-10-26 | 歌尔微电子股份有限公司 | MEMS microphone |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200612 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: No.268, Dongfang Road, high tech Industrial Development Zone, Weifang City, Shandong Province Patentee before: GOERTEK Inc. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20131225 |