CN109511067A - Electret Condencer Microphone - Google Patents
Electret Condencer Microphone Download PDFInfo
- Publication number
- CN109511067A CN109511067A CN201811472303.8A CN201811472303A CN109511067A CN 109511067 A CN109511067 A CN 109511067A CN 201811472303 A CN201811472303 A CN 201811472303A CN 109511067 A CN109511067 A CN 109511067A
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- China
- Prior art keywords
- layer
- backboard
- vibrating diaphragm
- insulating layer
- electret condencer
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
Abstract
The present invention relates to a kind of Electret Condencer Microphones, comprising: vibrating diaphragm layer；Backboard constitutes variable capacitance in the vibrating diaphragm layer surface, the backboard and the vibrating diaphragm layer by insulating supporting；The backboard includes the first insulating layer, conductive layer and the second insulating layer for stacking setting, and for the conductive layer between first insulating layer and second insulating layer, the vibrating diaphragm layer is opposite with the first insulating layer of the backboard.The reliability of the Electret Condencer Microphone enhances.
Description
Technical field
The present invention relates to silicon microphone technical field more particularly to a kind of Electret Condencer Microphones.
Background technique
MEMS (Micro-Electro-Mechanical System, MEMS) technology is high speed development in recent years
A new and high technology, it uses advanced semiconductor fabrication process, realize the batch micro operations of sensor, the devices such as driver,
Compared with corresponding traditional devices, MEMS device is in volume, power consumption, weight and in price has a fairly obvious advantage.City
On field, the main application example of MEMS device includes pressure sensor, accelerometer and silicon microphone etc..
Using the silicon microphone of MEMS technology manufacture in miniaturization, performance, reliability, environmental resistance, cost and volume production
There is suitable advantage with ECM ratio in ability, captures the consumption electronic product markets such as mobile phone, PDA, MP3 and hearing aid rapidly.Using
The silicon microphone of MEMS technology manufacture usually has the removable diaphragm being parallelly arranged with solid-state backboard, and diaphragm and backboard are formed
Variable condenser.Diaphragm is moved in response to incident sound energy, to change variable capacitance, and is thus generated for indicating incident
The electric signal of sound energy.
As the technology of capacitance-type micro silicon microphone develops, it is desirable that silicon microphone is smaller, cost is lower, while capacitor
The reliability of formula microphone need further to improve.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of Electret Condencer Microphones, improve the reliability of silicon microphone.
To solve the above-mentioned problems, the present invention provides a kind of Electret Condencer Microphones, comprising: vibrating diaphragm layer；Backboard is insulated
It is supported in the vibrating diaphragm layer surface, the backboard and the vibrating diaphragm layer constitute variable capacitance；The backboard includes stacking setting
First insulating layer, conductive layer and second insulating layer, the conductive layer is between first insulating layer and second insulating layer, institute
It is opposite with the first insulating layer of the backboard to state vibrating diaphragm layer.
Optionally, the bleeder port through the vibrating diaphragm layer is offered in the vibrating diaphragm layer.
Optionally, thickness of the thickness of the second insulating layer less than the first insulating layer.
Optionally, the second insulating layer at least covers the surface of the conductive layer.
Optionally, the second insulating layer also covers the side wall of the conductive layer and the first insulating layer.
Optionally, the backboard offers acoustic aperture.
Optionally, the bleeder port is opposite with the acoustic aperture position of the backboard outermost.
Optionally, a side surface of the backboard towards vibrating diaphragm layer is provided with salient point.
Optionally, the salient point is set to the back plate surface between adjacent acoustic aperture.
Optionally, the shape of the bleeder port includes at least one of round, rectangular or stria.
It optionally, further include substrate, vibrating diaphragm layer other side surface insulation is supported in the substrate surface, the substrate
Inside it is formed with the back chamber opposite with the vibrating diaphragm layer.
The backboard of Electret Condencer Microphone of the invention includes conductive layer and dielectric layers, improves the same of the intensity of backboard
When, avoid microphone from being failed in use by particle issues bring, the further reliability for improving microphone.Into one
Step, be formed with bleeder port in the vibrating diaphragm layer of microphone, can the intracorporal air pressure of active balance microphone chamber, to improve Mike
The reliability of wind.
Detailed description of the invention
Fig. 1 to Fig. 2 is the structural schematic diagram of the Electret Condencer Microphone of the embodiment of the invention；
Fig. 3 to Fig. 4 is the structural schematic diagram of the Electret Condencer Microphone of the embodiment of the invention.
Specific embodiment
It elaborates with reference to the accompanying drawing to the specific embodiment of Electret Condencer Microphone provided by the invention.
Fig. 1 and Fig. 2 are please referred to, is the diagrammatic cross-section of the Electret Condencer Microphone of the embodiment of the invention.
The Electret Condencer Microphone includes: the substrate 100 with back chamber 101；It is suspended on the back chamber 101 of the substrate 100
The vibrating diaphragm layer 200 of top, the vibrating diaphragm layer 200 is by insulating supporting in 100 surface of substrate；In the vibrating diaphragm layer 200
The backboard 300 of side, the backboard 300 is by insulating supporting in 200 surface of vibrating diaphragm layer, the backboard 300 and 200 structure of vibrating diaphragm layer
At variable capacitance.
The substrate 100 can be semiconductor substrate or glass substrate, and in the specific embodiment, the substrate 100 is
Silicon substrate.
The edge of the vibrating diaphragm layer 200 is supported in 100 surface of substrate by the first supporting layer 110, so that the vibrating diaphragm layer
200 are suspended on 101 top of back chamber, and first supporting layer 110 can be in the process for forming the Electret Condencer Microphone
The residual fraction of sacrificial layer after middle releasing sacrificial layer.The vibrating diaphragm layer 200 is conductive material, as the first variable capacitance
Lower electrode.In this embodiment, the material of the vibrating diaphragm layer 200 is polysilicon.The thickness of the vibrating diaphragm layer 200 compared with
It is low, it can be vibrated up and down under sound wave effect, so that the electricity for the variable capacitance that the vibrating diaphragm layer 200 and backboard 300 are constituted
Capacitance changes.The rigidity of the vibrating diaphragm layer 200 can be adjusted by adjusting the thickness of vibrating diaphragm layer 200, so as to adjust electricity
Hold the sensitivity of variation.In the specific embodiment, the material of first supporting layer 110 is silica；It is specific real at other
It applies in mode, the material of first supporting layer 110 can also be the insulating materials such as silicon nitride, silicon oxynitride, silicon oxide carbide.
Bleeder port 201 is also provided in the vibrating diaphragm layer 200.The bleeder port 201 is intracorporal for balancing microphone chamber
Air pressure avoids during microphone package, the intracorporal air pressure of microphone chamber is excessive or too small and influence when environment changes
The working performance of microphone.The bleeder port 201 is uniformly and symmetrically distributed at the edge position of the vibrating diaphragm layer 200, energy
Enough intracorporal air pressures of even regulation chamber.
In the specific embodiment, the bleeder port 201 is U-shaped stria, is uniformly distributed in 200 outside of vibrating diaphragm layer, is convenient for
Balance the air pressure in microphone cavity at each position.In other specific embodiments, the bleeder port 201 can also be long
Bar shaped, intersection the other shapes such as strip slot, circle, square or polygonal hole.The size of the bleeder port 201 is usual
It is smaller, avoid reducing vibrating diaphragm layer 200 to the resistance of sound wave.
In the specific embodiment, 200 edge of vibrating diaphragm layer is completely fixedly supported to 100 surface of substrate for one week,
Full film fixed support structure is formed, reliability is higher, is not susceptible to the problems such as being broken, is damaged, can pass through the thin of vibrating diaphragm layer 200
Film thickness and internal stress adjust the rigidity of the vibrating diaphragm layer 200.It, can also be in other specific embodiments of the invention
Only the portion at 200 edge of vibrating diaphragm layer is supported.
The edge of the backboard 300 is supported in 200 surface of vibrating diaphragm layer by the second supporting layer 120, so that the backboard 300
It is suspended on 200 top of vibrating diaphragm layer, the backboard 300 constitutes variable capacitance with vibrating diaphragm layer 200.Second supporting layer 120 can be with
For the residual fraction of the sacrificial layer after releasing sacrificial layer during forming the Electret Condencer Microphone.The specific embodiment party
In formula, the material of second supporting layer 120 is silica；In other specific embodiments, second supporting layer 120
Material can also be the insulating materials such as silicon nitride, silicon oxynitride, silicon oxide carbide.
In the specific embodiment, 300 edge of backboard is completely fixedly supported to 200 surface of vibrating diaphragm layer for one week,
Full film fixed support structure is formed, reliability is higher, is not susceptible to the problems such as being broken, is damaged.In other specific realities of the invention
Apply in mode, can also the portion only to 300 edge of backboard be supported.
It is also provided with acoustic aperture 304 on the backboard 300, after so that vibrating diaphragm layer 200 is generated vibration convenient for sound wave, in variable capacitance
Air pressure change can cross through the release outward of the acoustic aperture 304, avoid air pressure change is excessive from damaging to microphone.
In this specific embodiment, 300 surface of backboard is additionally provided with salient point 305.In the specific embodiment,
The salient point 305 is arranged towards a side surface of vibration level 200 in backboard 300, when vibrating diaphragm layer 200 to backboard 300 deformation occurs when,
The salient point 305 can be adhered on backboard 300 to avoid vibration level 200, and influence the performance of microphone.Preferably, acoustic aperture 304
It is set to the middle part of backboard 300, the surface of backboard 300 towards vibrating diaphragm layer 200 between adjacent acoustic aperture 304 is provided with described convex
Point 305.
The backboard 300 is conductive, the top electrode as the variable capacitance.In order to improve the strong of the backboard
Degree, avoiding backboard 300, deformation occurs in use, and the backboard 300 can be composite construction, including conductive layer and at least
One layer insulating, the insulating layer enhance the intensity of backboard 300 as supporting layer.In the specific embodiment, the backboard
300 include the first insulating layer 301, conductive layer 302 and second insulating layer 303, and the conductive layer 302 is located at first insulation
Between layer 301 and second insulating layer 303.Specifically, first insulating layer 301 and the material of second insulating layer 303 can be
At least one of insulating materials such as silicon nitride, silica and silicon oxynitride.In the specific embodiment, first insulation
Layer 301 and the material of second insulating layer 303 are silicon nitride.Due to silicon nitride hardness with higher, so that the backboard 300
As fixed electrode, it is not susceptible to deform, to improve the reliability of microphone.
In the specific embodiment, the thickness of first insulating layer 301 is greater than the thickness of the second insulating layer 303
The thickness of degree, first insulation 301 is larger, is used to support the backboard 300, backboard 300 is avoided to send out to 200 direction of vibrating diaphragm layer
Raw recess；The thickness of the second insulating layer 303 is smaller, mainly plays the role of insulation protection to the conductive layer 302, avoids
Since vibrating diaphragm layer 200 and the connection of backboard 300 are led to microphone effect of leakage performance by the particle introduced in technical process, or even can
It can failure.The thickness requirement of the second insulating layer 303 avoids thickness excessive in Nano grade, due to gravity and stress
Causing backboard 300 to vibrating diaphragm layer 200, deformation occurs.In some embodiments, the thickness of the second insulating layer 303 can
Think 5nm~500nm.
In the specific embodiment, the second insulating layer 303 also covers first insulating layer at 404 edge of acoustic aperture
301 and conductive layer 302 side wall, to protect surface and the side wall of the conductive layer 302 comprehensively, by particle bring failure drop to
It is minimum.
In other specific embodiments, insulating layer only can be covered in the side of the conductive layer 302.
Fig. 3 and Fig. 4 are please referred to, for the diagrammatic cross-section of the Electret Condencer Microphone of another specific embodiment of the present invention.
In the specific embodiment, the backboard 300 of the Electret Condencer Microphone includes the first insulating layer 301, conductive layer 302
And second insulating layer 401.In the specific embodiment, the second insulating layer 401 only covers the table of the conductive layer 302
Face constitutes sandwich structure with the conductive layer 302, the first insulating layer 301.Although the side wall of conductive layer 302 is not by described
Two insulating layer 401 is protected, but since the thickness of conductive layer 302 is lower, side wall dimensions are smaller, the probability of particle residue compared with
It is small, therefore failure probability reduces.
The backboard of the Electret Condencer Microphone of above-mentioned specific embodiment includes conductive layer and dielectric layers, improves backboard
While intensity, microphone is avoided to be failed in use by particle issues bring, it is further improve microphone can
By property.Further, be formed with bleeder port in the vibrating diaphragm layer of microphone, can the intracorporal air pressure of active balance microphone chamber, from
And improve the reliability of microphone.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (11)
1. a kind of Electret Condencer Microphone characterized by comprising
Vibrating diaphragm layer；
Backboard constitutes variable capacitance in the vibrating diaphragm layer surface, the backboard and the vibrating diaphragm layer by insulating supporting；Its feature exists
In,
The backboard includes the first insulating layer, conductive layer and the second insulating layer for stacking setting, and the conductive layer is located at described the
Between one insulating layer and second insulating layer, the vibrating diaphragm layer is opposite with the first insulating layer of the backboard.
2. Electret Condencer Microphone according to claim 1, which is characterized in that offered in the vibrating diaphragm layer through the vibration
The bleeder port of film layer.
3. Electret Condencer Microphone according to claim 1, which is characterized in that the thickness of the second insulating layer is less than first
The thickness of insulating layer.
4. Electret Condencer Microphone according to claim 1, which is characterized in that the second insulating layer at least cover described in lead
The surface of electric layer.
5. Electret Condencer Microphone according to claim 4, which is characterized in that the second insulating layer also covers the conduction
The side wall of layer and the first insulating layer.
6. Electret Condencer Microphone according to claim 1, which is characterized in that the backboard offers acoustic aperture.
7. Electret Condencer Microphone according to claim 6, which is characterized in that the bleeder port and the backboard outermost
Acoustic aperture position is opposite.
8. Electret Condencer Microphone according to claim 1, which is characterized in that the backboard is towards a side surface of vibrating diaphragm layer
It is provided with salient point.
9. Electret Condencer Microphone according to claim 8, which is characterized in that the salient point is set between adjacent acoustic aperture
Back plate surface.
10. Electret Condencer Microphone according to claim 2, which is characterized in that the shape of the bleeder port includes round, side
At least one of shape or stria.
11. Electret Condencer Microphone according to claim 1, which is characterized in that it further include substrate, the vibrating diaphragm layer other side
Surface insulation is supported in the substrate surface, and the back chamber opposite with the vibrating diaphragm layer is formed in the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811472303.8A CN109511067B (en) | 2018-12-04 | 2018-12-04 | Capacitance microphone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811472303.8A CN109511067B (en) | 2018-12-04 | 2018-12-04 | Capacitance microphone |
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| Publication Number | Publication Date |
|---|---|
| CN109511067A true CN109511067A (en) | 2019-03-22 |
| CN109511067B CN109511067B (en) | 2020-12-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811472303.8A Active CN109511067B (en) | 2018-12-04 | 2018-12-04 | Capacitance microphone |
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Cited By (12)
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| CN109951781A (en) * | 2019-04-03 | 2019-06-28 | 创达电子(潍坊)有限公司 | Silicon microphone structure |
| CN111031460A (en) * | 2019-12-27 | 2020-04-17 | 歌尔微电子有限公司 | MEMS chip, preparation method and MEMS microphone comprising MEMS chip |
| CN111277937A (en) * | 2020-02-13 | 2020-06-12 | 中芯集成电路制造(绍兴)有限公司 | MEMS microphone and manufacturing method thereof |
| CN112104961A (en) * | 2020-09-21 | 2020-12-18 | 无锡韦尔半导体有限公司 | Micro-electro-mechanical structure and MEMS microphone |
| CN112689229A (en) * | 2020-12-29 | 2021-04-20 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN112702684A (en) * | 2020-12-29 | 2021-04-23 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN112822616A (en) * | 2021-01-19 | 2021-05-18 | 潍坊歌尔微电子有限公司 | Sensing chip and MEMS sensor |
| CN112887895A (en) * | 2021-01-26 | 2021-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | Process method for adjusting pull-in voltage of MEMS microphone |
| WO2021134333A1 (en) * | 2019-12-30 | 2021-07-08 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| WO2022062986A1 (en) * | 2020-09-28 | 2022-03-31 | 苏州敏芯微电子技术股份有限公司 | Microelectromechanical structure, electronic cigarette switch, and electronic cigarette |
| CN114501274A (en) * | 2022-01-29 | 2022-05-13 | 华润微电子控股有限公司 | Capacitive MEMS microphone and manufacturing method thereof |
| CN111031460B (en) * | 2019-12-27 | 2024-06-25 | 歌尔微电子有限公司 | MEMS chip, preparation method and MEMS microphone comprising MEMS chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109951781B (en) * | 2019-04-03 | 2020-06-30 | 创达电子(潍坊)有限公司 | Silicon microphone structure |
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| CN112104961A (en) * | 2020-09-21 | 2020-12-18 | 无锡韦尔半导体有限公司 | Micro-electro-mechanical structure and MEMS microphone |
| WO2022062986A1 (en) * | 2020-09-28 | 2022-03-31 | 苏州敏芯微电子技术股份有限公司 | Microelectromechanical structure, electronic cigarette switch, and electronic cigarette |
| CN112689229A (en) * | 2020-12-29 | 2021-04-20 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN112689229B (en) * | 2020-12-29 | 2022-06-03 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN112702684A (en) * | 2020-12-29 | 2021-04-23 | 瑞声声学科技(深圳)有限公司 | Silicon-based microphone and manufacturing method thereof |
| CN112822616A (en) * | 2021-01-19 | 2021-05-18 | 潍坊歌尔微电子有限公司 | Sensing chip and MEMS sensor |
| CN112887895A (en) * | 2021-01-26 | 2021-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | Process method for adjusting pull-in voltage of MEMS microphone |
| CN114501274A (en) * | 2022-01-29 | 2022-05-13 | 华润微电子控股有限公司 | Capacitive MEMS microphone and manufacturing method thereof |
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