CN114014254A - MEMS structure - Google Patents
MEMS structure Download PDFInfo
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- CN114014254A CN114014254A CN202111273348.4A CN202111273348A CN114014254A CN 114014254 A CN114014254 A CN 114014254A CN 202111273348 A CN202111273348 A CN 202111273348A CN 114014254 A CN114014254 A CN 114014254A
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- 239000002131 composite material Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 18
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000002161 passivation Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 150000001875 compounds Chemical class 0.000 abstract 3
- 239000000463 material Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Abstract
The application discloses MEMS structure, include backplate and the compound vibration layer of piezoelectricity separated through the cavity, the backplate with the compound vibration layer of piezoelectricity constitutes the electric capacity structure, wherein, the compound vibration layer of piezoelectricity is including the vibration supporting layer, first electrode layer, piezoelectric layer and the second electrode layer that stack gradually. The MEMS structure combines the characteristics of a piezoelectric MEMS microphone and a capacitance MEMS microphone, and obtains more converted electric energy under the condition of receiving equal sound energy, so that the output electric energy is improved, and higher sensitivity is obtained.
Description
Technical Field
The present application relates to the field of Electro-acoustic conversion devices, and in particular, to a Micro-Electro-Mechanical System (MEMS) structure.
Background
MEMS microphones (i.e., microphones) mainly include both capacitive and piezoelectric types. MEMS condenser microphone passes through vibrating diaphragm and backplate constitution flat capacitor, and the vibrating diaphragm produces the vibration under the acoustic wave effect, leads to the distance between vibrating diaphragm and the backplate to change, leads to flat capacitor's electric capacity to turn into the signal of telecommunication with the sound wave signal. The MEMS piezoelectric microphone is prepared by utilizing a micro-electro-mechanical system technology and a piezoelectric film technology, and has small size, small volume and good consistency due to the adoption of semiconductor planar technology, bulk silicon processing technology and other technologies.
At present, capacitive MEMS microphones seem to reach a performance bottleneck and have not improved appreciably in recent years; the low sensitivity of the piezoelectric MEMS microphone restricts the development of the piezoelectric MEMS microphone.
Disclosure of Invention
To solve the problems in the related art, the present application provides a MEMS structure that can obtain high sensitivity and improve output energy.
The technical scheme of the application is realized as follows:
according to one aspect of the present application, there is provided a MEMS structure comprising a back plate and a piezoelectric composite vibration layer separated by a cavity, the back plate and the piezoelectric composite vibration layer constituting a capacitor structure, wherein the piezoelectric composite vibration layer comprises a vibration support layer, a first electrode layer, a piezoelectric layer and a second electrode layer stacked in this order.
Wherein the backplate is formed over a substrate, the cavity is formed over the backplate, and the piezoelectric composite vibration layer is formed over the cavity.
Wherein the MEMS structure includes the substrate, a passivation layer formed over the substrate, the backplate formed over the passivation layer, a first spacer layer formed over the passivation layer and spaced apart from the backplate, the vibration support layer formed over the first spacer layer.
Wherein the piezoelectric composite vibration layer has a first through hole thereon, the first through hole penetrates through the vibration support layer, the first electrode layer, the piezoelectric layer, and the second electrode layer, and the first through hole communicates with the cavity.
Wherein the piezoelectric composite vibration layer is formed over a substrate, the cavity is formed over the piezoelectric composite vibration layer, and the backplate is formed over the cavity.
Wherein the MEMS structure comprises a barrier layer formed over the substrate, the vibration support layer, the first electrode layer, the piezoelectric layer, and the second electrode layer formed sequentially over the barrier layer, a second spacer layer formed over the barrier layer and spaced apart from the first electrode layer, and a back plate formed over the second spacer layer.
Wherein the backing plate comprises a support structure layer and a pole plate layer over the support structure layer.
Wherein the back plate has a third through hole penetrating the support structure layer and the pole plate layer.
Wherein the piezoelectric composite vibration layer has a second through hole thereon, the second through hole penetrates through the vibration support layer, the first electrode layer, the piezoelectric layer, and the second electrode layer, and the second through hole communicates with the cavity.
Wherein the MEMS structure further has a back cavity penetrating the substrate and the barrier layer, the second via communicating with the back cavity. The first electrode layer, the piezoelectric layer, and the second electrode layer are suspended over the back cavity.
The MEMS structure provided by the application combines the characteristics of the piezoelectric type MEMS microphone and the capacitance type MEMS microphone, and obtains more converted electric energy under the condition of receiving equal sound energy, so that the output electric energy is improved, and higher sensitivity is obtained.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
Fig. 1 is a perspective cross-sectional view of a MEMS structure provided in embodiment 1 of the present invention;
FIG. 2 is a cross-sectional view of a MEMS structure provided in embodiment 1 of the present invention;
FIG. 3 is a perspective cross-sectional view of a MEMS structure provided in embodiment 2 of the present invention;
fig. 4 is a cross-sectional view of a MEMS structure provided in embodiment 2 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments that can be derived from the embodiments given herein by a person of ordinary skill in the art are intended to be within the scope of the present disclosure.
According to an embodiment of the present application, there is provided a MEMS structure capable of improving sensitivity and improving output energy. The MEMS structure can be applied to sensors, such as microphones, and also to actuators, such as speakers. The MEMS structure will be described in detail below.
Referring to fig. 1 and 2, the MEMS structure includes a back plate 13 and a piezoelectric composite vibration layer separated by a cavity 14, the back plate 13 and the piezoelectric composite vibration layer constitute a capacitor structure, wherein the piezoelectric composite vibration layer includes a vibration support layer 15, a first electrode layer 16, a piezoelectric layer 17 and a second electrode layer 18, which are sequentially stacked.
It is known that the piezoelectric composite vibration layer vibrates under the action of sound waves, and converts sound energy into electric energy based on the piezoelectric effect. Further, the piezoelectric composite vibration layer is used as a vibration diaphragm of the capacitor, the piezoelectric composite vibration layer and the back plate 13 form a flat capacitor, and the vibration of the piezoelectric composite vibration layer causes the change of the capacitor, so that sound energy is further converted into electric energy. Therefore, the MEMS structure combines the structures of the piezoelectric MEMS microphone and the capacitance MEMS microphone, and obtains more converted electric energy under the condition of receiving equal sound energy, thereby improving the output electric energy and obtaining higher sensitivity.
The present application provides two embodiments of MEMS structures based on the difference in the location of the backplate 13 and the piezoelectric composite vibration layer relative to the cavity 14.
Example 1
The substrate 10 comprises silicon or any suitable silicon-based compound or derivative (e.g., silicon wafer, SOI, SiO)2Polysilicon on Si). A passivation layer 11 is formed over the substrate 10, and the material of the passivation layer 11 includes silicon dioxide and silicon nitride. A back plate 13 is formed over the passivation layer 11. A first spacer layer 12 is formed over the passivation layer 11 and separated from the back plate 13For example, the material of the first spacer layer 12 includes silicon dioxide or PSG (phospho-silicate Glass).
A vibration support layer 15 is formed over the first spacer layer 12 and is suspended over the cavity 14. The material of the vibration support layer 15 includes silicon nitride (Si)3N4) Silicon oxide, monocrystalline silicon, polycrystalline silicon, or other suitable support material. A first electrode layer 16 is formed over the vibration support layer 15, a piezoelectric layer 17 is formed over the first electrode layer 16, and a second electrode layer 18 is formed over the piezoelectric layer 17. The first piezoelectric layer 17 can convert the applied pressure into a voltage, and the first electrode layer 16 and the second electrode layer 18 can transmit the generated voltage to other integrated circuit devices. The piezoelectric layer 17 comprises zinc oxide, aluminum nitride, an organic piezoelectric film, lead zirconate titanate (PZT), a perovskite type piezoelectric film, or other suitable materials. The materials of the back plate 13, the first electrode layer 16, and the second electrode layer 18 include aluminum, gold, platinum, molybdenum, titanium, chromium, and composite films composed thereof or other suitable materials.
As is apparent from the above description, the back plate 13 is formed over the substrate 10, the cavity 14 is formed over the back plate 13, and the piezoelectric composite vibration layer is formed over the cavity 14.
Preferably, in embodiment 1, the piezoelectric composite vibration layer has a first through hole 19 thereon, the first through hole 19 penetrates the vibration support layer 15, the first electrode layer 16, the piezoelectric layer 17, and the second electrode layer 18, and the first through hole 19 communicates with the cavity 14. The first through hole 19 is used to keep the air pressure of the cavity 14 and the outside balanced.
The piezoelectric type and capacitance type combined MEMS structure comprises a group of electric signals output by the panel capacitor and a group of electric signals output by the piezoelectric composite vibration layer, so that the sensitivity of the MEMS structure can be improved.
Example 2
It should be noted that the same components are denoted by the same reference numerals in embodiment 2 and embodiment 1, and the materials used are substantially the same, which are not described again.
Referring to fig. 3 and 4, the MEMS structure includes a barrier layer 21 formed over a substrate 10. The material of the barrier layer 21 comprises thermally oxidized silicon dioxide.
The MEMS structure further comprises a vibration support layer 15, a first electrode layer 16, a piezoelectric layer 17 and a second electrode layer 18, formed in that order above the barrier layer 21.
The second spacer layer 24 is formed over the barrier layer 21 and spaced apart from the first electrode layer 16. The material of the second spacer layer 24 may be the same as the material of the first spacer layer 12. The back plate 13 is formed over the second spacer layer 24.
As is apparent from the above description, the piezoelectric composite vibration layer is formed over the substrate 10, the cavity 14 is formed over the piezoelectric composite vibration layer, and the back plate 13 is formed over the cavity 14.
Preferably, the back plate 13 includes a support structure layer 131 and a plate layer 132 above the support structure layer 131. The material of the plate layer 132 may be the same as the material of the first electrode layer 16. The back plate 13 has a third through hole 23 penetrating the support structure layer 131 and the plate layer 132. The third through hole 23 is used to balance the air pressure and release the stress on the back plate 13.
Preferably, the piezoelectric composite vibration layer has a second through hole 19, the second through hole 19 penetrates through the vibration support layer 15, the first electrode layer 16, the piezoelectric layer 17 and the second electrode layer 18, and the second through hole 19 communicates with the cavity 14. The second through hole 19 is used to balance the air pressure and release the stress of the piezoelectric composite vibration layer.
The MEMS structure also has a back cavity 22 penetrating the substrate 10 and the barrier layer 21, the second via 19 communicating with the back cavity 22. The first electrode layer 16, the piezoelectric layer 17 and the second electrode layer 18 are suspended over the back cavity 22.
In summary, with the above technical solution of the present application, the MEMS structure provided by the present application combines the characteristics of the piezoelectric MEMS microphone and the capacitive MEMS microphone, and obtains more converted electrical energy under the condition of receiving equal acoustic energy, thereby improving the output electrical energy and obtaining higher sensitivity.
The present invention is not intended to be limited to the particular embodiments shown and described, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. The MEMS structure is characterized by comprising a back plate and a piezoelectric composite vibration layer which are separated by a cavity, wherein the back plate and the piezoelectric composite vibration layer form a capacitor structure, and the piezoelectric composite vibration layer comprises a vibration support layer, a first electrode layer, a piezoelectric layer and a second electrode layer which are sequentially stacked.
2. The MEMS structure of claim 1, wherein the backplate is formed over a substrate, the cavity is formed over the backplate, and the piezoelectric composite vibration layer is formed over the cavity.
3. The MEMS structure of claim 2, comprising the substrate, a passivation layer formed over the substrate, the back plate formed over the passivation layer, a first spacer layer formed over the passivation layer and spaced apart from the back plate, the vibration support layer formed over the first spacer layer.
4. The MEMS structure of claim 3, wherein the piezoelectric composite vibration layer has a first through hole thereon, the first through hole penetrating the vibration support layer, the first electrode layer, the piezoelectric layer, and the second electrode layer, and the first through hole communicating with the cavity.
5. The MEMS structure of claim 1, wherein the piezoelectric composite vibration layer is formed over a substrate, the cavity is formed over the piezoelectric composite vibration layer, and the backplate is formed over the cavity.
6. The MEMS structure of claim 5, comprising a barrier layer formed over the substrate, the vibration support layer, the first electrode layer, the piezoelectric layer, and the second electrode layer formed sequentially over the barrier layer, a second spacer layer formed over the barrier layer and spaced apart from the first electrode layer, a back plate formed over the second spacer layer.
7. The MEMS structure of claim 6, wherein the backplate comprises a support structure layer and a pole plate layer over the support structure layer.
8. The MEMS structure of claim 7, wherein the back plate has a third via penetrating the support structure layer and the pole plate layer.
9. The MEMS structure of claim 8, wherein the piezoelectric composite vibration layer has a second through hole thereon, the second through hole penetrating the vibration support layer, the first electrode layer, the piezoelectric layer, and the second electrode layer, and the second through hole communicating with the cavity.
10. The MEMS structure of claim 9, further having a back cavity penetrating the substrate and the barrier layer, the second via communicating with the back cavity. The first electrode layer, the piezoelectric layer, and the second electrode layer are suspended over the back cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111273348.4A CN114014254A (en) | 2021-10-29 | 2021-10-29 | MEMS structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111273348.4A CN114014254A (en) | 2021-10-29 | 2021-10-29 | MEMS structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114014254A true CN114014254A (en) | 2022-02-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111273348.4A Pending CN114014254A (en) | 2021-10-29 | 2021-10-29 | MEMS structure |
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| Country | Link |
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| CN (1) | CN114014254A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116193342A (en) * | 2023-01-09 | 2023-05-30 | 武汉敏声新技术有限公司 | Capacitance-piezoelectric coupling microphone |
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| CN116193342B (en) * | 2023-01-09 | 2023-11-24 | 武汉敏声新技术有限公司 | Capacitance-piezoelectric coupling microphone |
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