CN2704174Y - Micro acoustic device based on magneto resistance effect - Google Patents
Micro acoustic device based on magneto resistance effect Download PDFInfo
- Publication number
- CN2704174Y CN2704174Y CN 200420049609 CN200420049609U CN2704174Y CN 2704174 Y CN2704174 Y CN 2704174Y CN 200420049609 CN200420049609 CN 200420049609 CN 200420049609 U CN200420049609 U CN 200420049609U CN 2704174 Y CN2704174 Y CN 2704174Y
- Authority
- CN
- China
- Prior art keywords
- layer
- magneto
- silicon dioxide
- movable diaphragm
- resistance effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000694 effects Effects 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- 239000010703 silicon Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 230000005291 magnetic effect Effects 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- TZVJRPRFJIXRGV-UHFFFAOYSA-N [Cr].[Co].[Ta] Chemical compound [Cr].[Co].[Ta] TZVJRPRFJIXRGV-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000013049 sediment Substances 0.000 abstract 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000005611 electricity Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Landscapes
- Hall/Mr Elements (AREA)
Abstract
The utility model discloses a micro acoustic device based on magneto resistance effect, which belongs to the field of semiconductor device. The device is composed of a structure of movable diaphragm with hard magnetic thin film as the sediment and a fixed structure of multilayer film of magneto resistor as the sediment. The structure of movable diaphragm is successively combined by silicon bulk, silicon dioxide, layer of silicon nitride and layer of silicon dioxide from the substratum to the upper position. The structure of the fixed part is the same as the structure of the movable diaphragm, except that the layer of permanent magnet material is changed into the GMR multilayer film of magneto resistor. The utility model makes use of the movable diaphragm and multilayer film of magneto resistor to realize the transmission between the signals of electricity and sound, which makes the kind of acoustical device with high sensibility, low noise, and broad range of response available. The subsequent processing circuit is very simple. Because of the simple processing steps, the performance of the product is reliable, the rate of finished products is high and the device can meet the requirements of the volume-production.
Description
Technical field
The utility model belongs to field of semiconductor devices, particularly a kind of micro-acoustic device based on magneto-resistance effect.
Background technology
Magneto-resistor MR (magnetoresistance) effect is meant the material phenomenon that resistance changes under the action of a magnetic field.Ferromagnetic multicrystal anisotropic magnetoresistance (AMR) effect promptly was found as far back as 1857, because sensitivity is not high, and had limited its application in sensor field.The discovery of giant magnetoresistance effect (GMR), tunneling magnetoresistance (TMR) and huge magneto-resistance effect (CMR) after 1988 in the metallized multilayer film has activated this field.Magnetic resistance material can be made various highly sensitive Magnetic Sensors, and the Weak magentic-field signal is surveyed.Compared with various traditional transducers, the superiority of MR transducer is very outstanding: volume is little, highly sensitive, impedance is low, anti-adverse environment, cost of manufacture is low, response range is wide, temperature coefficient of resistance is little, and can realize contactless detection.Because the MR transducer is mainly surveyed the angle of the two magnetospheric direction of magnetizations, thus not high to the requirement of strength in detection magnetic field, on the making precision of transducer itself, also can allow relatively large error.Now, the GMR sensing technology has broad application prospects in fields such as automatic technology, household electrical appliance, brand recognition, satellite fix, navigation system and Technologies of Precision Measurement.
On the other hand, MEMS (Micro-Electro-Mechanical System) technology obtains develop rapidly in recent years, and has obtained immense success.Not only volume is little, cost is low, mechanical property is good to use the microsensor that MEMS technology makes, and can be integrated with cmos circuit, forms complicated micro-system, and silicon-based micro-microphone is exactly a focus of microsensor area research in recent years.With the micro-microphone is example, and it can be applied to cell phone, cordless telephone, hearing aids, various digital multimedia device, acoustic monitoring system or the like.Compare with traditional acoustical device, the MEMS micro-acoustic device have that volume is little, cost is low, reliability is high and can with the mutually integrated characteristics of signal processing circuit, thereby have wide application and fabulous application prospect.
Present silica-based micro-acoustic device, mainly based on electric capacity, piezoelectricity, pressure drag, modulation field effect transistor, optical waveguide principle, wherein piezoelectric type and condenser type are topmost two kinds.The advantage of piezoelectric type silicon micro-microphone is not have the air gap damping, need not bias voltage, but its sensitivity is generally lower, and noise is higher relatively.And Electret Condencer Microphone has superiority at aspects such as sensitivity, frequency response, temperature stabilities.Chinese invention patent (application number: 01140441.8) proposed a kind of design and manufacture craft thereof of line membrane capacitance formula silica-based microphone, utilize the line membrane structure to reduce of the influence of the interior residual stress of film to microphone property, be expected to obtain reasonable device performance, but its preparation process is very complicated, need bulk silicon technological and sacrifice layer process to combine, reliability and rate of finished products all are very limited.
Summary of the invention
The purpose of this utility model is to propose magneto-resistance effect a kind of micro-acoustic device based on magneto-resistance effect that combines with the MEMS technology is made of with the standing part that deposits magnetoresistive multilayered film the movable diaphragm part that deposits permanent thin film.It is characterized in that: the structure of described movable diaphragm part is for upwards being that silicon substrate 8, thermal oxidation silicon dioxide 7, silicon nitride layer 6, thermal oxidation silicon dioxide 7, low-temperature epitaxy silicon dioxide 9, permanent magnet material layer 11 and enhancing silicon dioxide layer 12 are formed composite membrane and stretched from silicon substrate 8 and form the cantilever diaphragm structure successively by bottom; The structure of described standing part is identical with the movable diaphragm part, just changes permanent magnet material layer 11 into GMR magnetoresistive multilayered film 10; Between cantilever vibrating diaphragm and standing part, erode away a fault trough 13; Deposit thermal oxidation silicon dioxide 7 and silicon nitride layer 6 successively at two-part silicon substrate 8 back sides, chamber 14 is carried on the back at the two-part back side in addition.
Described GMR magnetoresistive multilayered film is followed successively by tantalum layer 1, nifesphere 2, cobalt iron layer 3, copper layer 3, cobalt iron layer 3, iridium manganese layer 5 and tantalum layer 1 from bottom to top.
Described permanent magnet material layer is the cobalt chromium tantalum hard magnetic layer of magnetron sputtering deposition.
Compare with micro-acoustic devices such as existing piezoelectric type, condenser types, the beneficial effects of the utility model are that the utility model and MEMS process technology combine magneto-resistance effect is applied to micro-acoustic device, have realized the acoustoelectric signal conversion.Because the advantageous characteristic of the MR element that adopts, can realize effective detection of acoustic vibration, thereby obtain high sensitivity, low noise, the wide micro-acoustic device of response range, on mobile phone, hearing aids and other communication system voice applications, all have vast market prospect.Simultaneously, because what obtain is the resistance variations signal, do not need the charge detector in the micro-acoustic device of condenser type or piezoelectric type, subsequent conditioning circuit is handled simple, is not subject to influences such as temperature, humidity simultaneously, is beneficial to production in enormous quantities.
Description of drawings
Fig. 1 is the structural representation of magnetoresistive multilayered film
Fig. 2 is the structural representation of the acoustical device of cantilever type diaphragm structure.
Fig. 3 is the vertical view of Fig. 2.
Embodiment
The utility model proposes a kind of micro-acoustic device that magneto-resistance effect is combined with the MEMS technology based on magneto-resistance effect.Constitute with the standing part that deposits magnetoresistive multilayered film by the movable diaphragm part that deposits permanent thin film.In Fig. 2, structure shown in Figure 3, the structure of left side movable diaphragm part is for upwards being that silicon substrate 8, thermal oxidation silicon dioxide 7, silicon nitride layer 6, thermal oxidation silicon dioxide 7, low-temperature epitaxy silicon dioxide 9, permanent magnet material layer 11 and enhancing silicon dioxide layer 12 are formed composite membrane and stretched from silicon substrate 8 and form the cantilever diaphragm structure successively by bottom; The structure of the right standing part is identical with the movable diaphragm part, just changes permanent magnet material layer 11 into GMR magnetoresistive multilayered film 10; Between cantilever vibrating diaphragm and standing part, erode away a fault trough 13; Deposit thermal oxidation silicon dioxide 7 and silicon nitride layer 6 successively at two-part silicon substrate 8 back sides, chamber 14 is carried on the back at the two-part back side in addition.
Wherein GMR magnetoresistive multilayered film 10 (as shown in Figure 1) is followed successively by tantalum layer 1, nifesphere 2, cobalt iron layer 3, copper layer 4, cobalt iron layer 3, iridium manganese layer 5 and tantalum layer 1 from bottom to top.Wherein permanent magnet material layer 11 is the cobalt chromium tantalum hard magnetic layer of magnetron sputtering deposition.
The principle of the utility model foundation is: extraneous acoustic pressure causes that movable diaphragm vibrates, cause the permanent thin film that deposits on the movable diaphragm to produce the variation in magnetic field, this changes the magnetoresistive multilayered film that deposits and surveys on fixed structure, the multilayer film changes in resistance that causes can be read by external circuit, thereby realizes the conversion of signals of acoustic-electric.
Claims (3)
1. the micro-acoustic device based on magneto-resistance effect is made of with the standing part that deposits magnetoresistive multilayered film the movable diaphragm part that deposits permanent thin film the micro-acoustic device based on magneto-resistance effect; It is characterized in that: described movable diaphragm structure is for upwards being that silicon substrate (8), thermal oxidation silicon dioxide (7), silicon nitride layer (6), thermal oxidation silicon dioxide (7), low-temperature epitaxy silicon dioxide (9), permanent magnet material layer (11) and enhancing silicon dioxide layer (12) are formed composite membrane and stretched from silicon substrate (8) and form the cantilever diaphragm structure successively by bottom; The structure of described standing part is identical with the movable diaphragm part, just changes permanent magnet material layer (11) into GMR magnetoresistive multilayered film (10); Between cantilever vibrating diaphragm and standing part, erode away a fault trough (13); Deposit the silicon dioxide (7) and the silicon nitride layer (6) of thermal oxidation successively at two-part silicon substrate (8) back side, chamber (14) is carried on the back at the two-part back side in addition.
2. according to the described micro-acoustic device based on magneto-resistance effect of claim 1, it is characterized in that: described GMR magnetoresistive multilayered film is followed successively by tantalum layer (1), nifesphere (2), cobalt iron layer (3), copper layer (4), cobalt iron layer (3), iridium manganese layer (5) and tantalum layer (1) from bottom to top.
3. according to the described micro-acoustic device based on magneto-resistance effect of claim 1, it is characterized in that: described permanent magnet material layer is the cobalt chromium tantalum hard magnetic layer of magnetron sputtering deposition.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200420049609 CN2704174Y (en) | 2004-04-26 | 2004-04-26 | Micro acoustic device based on magneto resistance effect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 200420049609 CN2704174Y (en) | 2004-04-26 | 2004-04-26 | Micro acoustic device based on magneto resistance effect |
Publications (1)
Publication Number | Publication Date |
---|---|
CN2704174Y true CN2704174Y (en) | 2005-06-08 |
Family
ID=34776673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 200420049609 Expired - Fee Related CN2704174Y (en) | 2004-04-26 | 2004-04-26 | Micro acoustic device based on magneto resistance effect |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN2704174Y (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1571582B (en) * | 2004-04-26 | 2010-05-05 | 清华大学 | Mini-acoustical device based on magneto resistor effect |
CN104752151A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Integrated passive device and manufacture method thereof |
US10076267B2 (en) | 2014-10-03 | 2018-09-18 | General Electric Company | Methods and systems for improved navigation |
CN108924720A (en) * | 2018-06-25 | 2018-11-30 | 歌尔股份有限公司 | MEMS microphone |
CN109275080A (en) * | 2018-08-06 | 2019-01-25 | 歌尔股份有限公司 | A kind of sensor |
CN112995871A (en) * | 2021-03-01 | 2021-06-18 | 歌尔微电子股份有限公司 | MEMS sensor and electronic equipment |
CN114014254A (en) * | 2021-10-29 | 2022-02-08 | 安徽奥飞声学科技有限公司 | MEMS structure |
-
2004
- 2004-04-26 CN CN 200420049609 patent/CN2704174Y/en not_active Expired - Fee Related
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1571582B (en) * | 2004-04-26 | 2010-05-05 | 清华大学 | Mini-acoustical device based on magneto resistor effect |
CN104752151A (en) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Integrated passive device and manufacture method thereof |
CN104752151B (en) * | 2013-12-27 | 2018-08-17 | 中芯国际集成电路制造(上海)有限公司 | A kind of integrated passive devices and its manufacturing method |
US10076267B2 (en) | 2014-10-03 | 2018-09-18 | General Electric Company | Methods and systems for improved navigation |
CN108924720A (en) * | 2018-06-25 | 2018-11-30 | 歌尔股份有限公司 | MEMS microphone |
CN109275080A (en) * | 2018-08-06 | 2019-01-25 | 歌尔股份有限公司 | A kind of sensor |
CN109275080B (en) * | 2018-08-06 | 2020-07-24 | 歌尔股份有限公司 | Sensor |
CN112995871A (en) * | 2021-03-01 | 2021-06-18 | 歌尔微电子股份有限公司 | MEMS sensor and electronic equipment |
CN114014254A (en) * | 2021-10-29 | 2022-02-08 | 安徽奥飞声学科技有限公司 | MEMS structure |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6722206B2 (en) | Force sensing MEMS device for sensing an oscillating force | |
CN109883456B (en) | Magnetoresistive inertial sensor chip | |
US9236275B2 (en) | MEMS acoustic transducer and method for fabricating the same | |
CN101344447A (en) | Micro-electromechanical pressure transducer | |
CN109211281B (en) | A kind of sensor | |
CN109246566B (en) | MEMS sensor | |
US10926999B2 (en) | Microelectromechanical transducer | |
CN100455142C (en) | Capacitance type sound sensor in micro mechanical and electrical structure | |
CN109275080B (en) | Sensor | |
CN2704174Y (en) | Micro acoustic device based on magneto resistance effect | |
CN203482390U (en) | Micro-electro-mechanical system microphone | |
CN109141731A (en) | A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method | |
CN109218870B (en) | Microphone | |
CN108650606B (en) | Microphone (CN) | |
JP7364291B2 (en) | Magnetoresistive sound wave sensor with high sensitivity and its array device | |
CN105606201B (en) | Combined type MEMS bionic hydrophones | |
CN1571582B (en) | Mini-acoustical device based on magneto resistor effect | |
Lang et al. | Piezoelectric bimorph MEMS speakers | |
Horng et al. | Fabrication of a dual-planar-coil dynamic microphone by MEMS techniques | |
CN208300024U (en) | MEMS microphone | |
Fuji et al. | An ultra-sensitive spintronic strain-gauge sensor with gauge factor of 5000 and demonstration of a Spin-MEMS Microphone | |
CN200983671Y (en) | 2D co-shaking voltage porcelain vector water hearer | |
FR2995488A1 (en) | ACOUSTIC TRANSDUCER DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
CN116087840A (en) | Magnetic field sensor based on tuning fork type TPoS resonator | |
CN1838837B (en) | Minitype microphone with solid capacitance type structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20050608 |