CN109141731A - A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method - Google Patents

A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method Download PDF

Info

Publication number
CN109141731A
CN109141731A CN201810830681.2A CN201810830681A CN109141731A CN 109141731 A CN109141731 A CN 109141731A CN 201810830681 A CN201810830681 A CN 201810830681A CN 109141731 A CN109141731 A CN 109141731A
Authority
CN
China
Prior art keywords
wall surface
turbulent boundary
flexible base
microsensor
pressure test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810830681.2A
Other languages
Chinese (zh)
Inventor
马炳和
高伟
邓进军
罗剑
张忠刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northwestern Polytechnical University
Original Assignee
Northwestern Polytechnical University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northwestern Polytechnical University filed Critical Northwestern Polytechnical University
Priority to CN201810830681.2A priority Critical patent/CN109141731A/en
Publication of CN109141731A publication Critical patent/CN109141731A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01LMEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor

Abstract

The invention discloses a kind of flexible base microsensor that can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing methods, belong to sensor technical field.The microsensor mainly includes top electrode and lead 1, lower electrode and lead 2, metallic elastic layer 3, piezoelectric membrane 4, insulating layer 5, flexible substrate 6, polymer insulation protective layer 7.It is respectively metallic elastic layer 3, insulating layer 5 in the flexible substrate 6, constitutes sensor sensing unit fabric;Electrode and lead 2 form the sensing unit of " sandwich structure " formula under top electrode and lead 1- piezoelectric membrane 4-, are placed on insulating layer 5.There is back chamber at 6 back side of the flexible substrate position corresponding with sensing unit, for balancing deep water static pressure;Entire sensor surface is deposited with polymer insulation protective layer 7.Flexible base fluctuation pressure microsensor uses the MEMS manufacturing process of standard, space time high resolution, and resonance frequency high, meets underwater pressure fluctuations beneath turbulent boundary lay wideband testing requirement, is convenient for array, is suitable for the attaching of submarine navigation device curved surface.

Description

A kind of micro- biography of flexible base can be used for underwater turbulent boundary layer wall surface surging pressure test Sensor and its manufacturing method
One, fields:
The invention belongs to sensor technical fields, and being related to one kind can be used for underwater turbulent boundary layer wall surface surging pressure test Flexible base microsensor and its manufacturing method.
Two, background technique:
Pressure fluctuations beneath turbulent boundary lay (Pressure fluctuation), also known as pressure fluctuation, be characterization boundary layer and One of the most important parameter of hull near-wall model situation is to study turbulent boundary layer structure and its development, grasp boundary layer separation, Turn to twist etc. the important evidence of flow regimes.Meanwhile on the one hand random pulse pressure directly generates radiated noise, on the other hand motivate The vibration of object plane elastic construction generates radiated noise, therefore fluctuation pressure is also to cause the important sound source of hydrodynamic noise.With state The sustainable development of anti-maritime affairs, to the stealthy anti-acoustic capability of submarine navigation device, more stringent requirements are proposed.Realize that fluctuation pressure is accurately more Point measurement is significant to the promotion of aircraft performance, evaluation work, and realizes the technology of reducing noise and drag, active Flow Control Basis.Now, waters Study on Flow Field depends on Numerical Simulation Analysis mostly, and traditional measurement sensor includes micro-microphone, water Listening device etc. is hard substrate, and volume is relatively large, and array degree and installation are inconvenient, and are not suitable for measurement of curved surface.
The development of MEMS (MEMS) technology provides a kind of new tool for the measurement of wall surface fluctuation pressure.Using The flexible base fluctuation pressure microsensor of MEMS technology processing has the characteristics that flexibility, micromation, array, integrated, right The fine measurement of pressure fluctuations beneath turbulent boundary lay of underwater hull smooth surface, deep camber surface is applied with unique advantage.Example Such as: document " Flexible and Surface-Mountable Piezoelectric Sensor Arrays for Underwater Sensing in Marine Vehicles " in have developed a kind of underwater passive pressure based on piezoelectricity PZT and pass Aircraft may be implemented to the passive detection of near field mobile object in sensor.Sensor array is encapsulated using PDMS flexible material, can Detect the pressure signal of 1~200Hz.Document " Carbon black-PDMS composite conformal pressure Sensor arrays for near-body flow detection " the percolation phenomenon system based on high polymer doping conducting particles The sponge bulk underwater pressure sensor of standby Grazing condition PDMS doping carbon black is, it can be achieved that survey to underwater dynamic low-frequency pressure field Amount.Although both the above pliable pressure sensor can carry out the test of underwater dynamic force field, precision is lower, only to low frequency Fluctuation pressure signal is sensitive, can not achieve the fine measurement of underwater turbulent boundary layer wideband pressure fluctuation.
Three, summary of the invention
Goal of the invention:
It is aircraft reducing noise and drag, active Flow for the fine measurement for realizing underwater turbulent boundary layer wideband pressure fluctuation Control provides Technical Reference, and the invention proposes a kind of flexible bases that can be used for underwater turbulent boundary layer wall surface surging pressure test Microsensor and its manufacturing method.
Technical solution: refering to attached drawing 1, it can be used for the flexible base micro sensing of underwater turbulent boundary layer wall surface surging pressure test Device mainly includesTop electrode and lead 1, lower electrode and lead 2, metallic elastic layer 3, piezoelectric membrane 4, insulating layer 5, flexible substrate 6, polymer insulation protective layer 7.It is respectively metallic elastic layer 3, insulating layer 5 in the flexible substrate 6, constitutes sensor sensing list First fabric;Electrode and lead 2 form the sensing unit of " sandwich structure " formula under top electrode and lead 1- piezoelectric membrane 4-, It is placed on insulating layer 5.There is back chamber at 6 back side of the flexible substrate position corresponding with sensing unit, it is quiet for balancing deep water Pressure;Entire sensor surface is deposited with polymer insulation protective layer 7.
As a kind of more optimal solution, zno piezoelectric thin film of the piezoelectric membrane 4 using ion doping, zinc oxide pressure There is conductive film autonomous C axis oriented can be obviously improved film piezo-electric performance by ion doping.The lower electrode 2 is adopted With Titanium, titanium is close with zinc oxide lattice constant, and mismatch is small, is conducive to zno piezoelectric thin film crystal orientation and grows.The insulating layer 5 The materials such as silica or silicon nitride can be used, consider that physical parameters, the silica such as thermal expansion coefficient, Young's modulus are more conducive to Zno piezoelectric thin film growth.The polymer insulation protective layer 7 uses c-type Parylene (Parylene C), Parylene C has better acid-alkali-corrosive-resisting and insulating properties, does not influence sensing unit response while protection device and surveys Examination.The flexible substrate 6 uses Kapton, and high temperature resistant is up to 400 DEG C or more, long-term use temperature range 200~300 DEG C, there is high insulating property.
A kind of manufacturing method for the flexible base microsensor can be used for underwater turbulent boundary layer wall surface fluctuation pressure measurement, packet Include following key step:
Step 1: 6 surface spin coating PDMS of flexible substrate makes flexible polyimide film substrate and hard lining as binder Bottom tight bond, and carry out standard cleaning;
Step 2: being sequentially prepared metallic elastic layer 3, insulating layer 5 on 6 surface of flexible substrate;
Step 3: patterned metal elastic layer 3, insulating layer 5 form unit fabric
Step 4: electrode and lead 2 under being prepared on fabric;
Step 5: preparing sensitive thin film in lower electrode and 2 surface of lead, image conversion obtains piezoelectric membrane 4, and forms lower electricity Pole fairlead;
Step 6: preparation top electrode and lead 1;
Step 7: flexible substrate 6 carries on the back chamber etching, discharges sensing unit.
Step 8: device overall surface deposited polymer insulating protective layer 7.
The beneficial effects of the present invention are:
The base material of flexibility base fluctuation pressure microsensor proposed by the present invention is flexible polyimide film, high temperature resistant Up to 400 DEG C or more, 200~300 DEG C of long-term use temperature range, there is high insulating property.To improve device resonance frequency, meet Underwater turbulence pulsation pressure wideband test characteristic, microsensor sensing unit use the zno piezoelectric thin film of ion doping, tool There is high piezoelectric characteristic, response frequency is high, and measurement sensitivity is good;While using silica as insulating layer, device is improved Overall stiffness.Device integrally encapsulates protection using the c-type Parylene of insulation acid-alkali-corrosive-resisting, is satisfied with the need tested under water It asks.
It (1) can environmental work under water;Device integrally using the Parylene encapsulation acidproof, alkaline-resisting, corrosion resistance is strong, mentions The high reliability of device underwater operation;Sensing unit is discharged, contacts sensitive thin film directly with extraneous flow field, to balance Underwater hydrostatic pressure, further improves the sensitivity that sensor works under water.
(2) time, spatial resolution are high, and sensitivity is excellent, are convenient for array;The piezoelectric sensitivity unit size of sensor exists The size of micron dimension, the microphones such as opposite grade micro-microphone, hydrophone has dropped a magnitude, and spatial resolution mentions It is high;Zno piezoelectric thin film has high piezoelectric characteristic by ion doping, and sensitivity is excellent;Furthermore sensor is passed through orderly Arrangement preparation facilitates array to design, the multiple spot for realizing pressure fluctuations beneath turbulent boundary lay is effectively smart on same PI film Thin measurement.
(3) for flexible bendable, it can be achieved that hull curved surface directly attaches, stream field interference is small;Flexible PI film is as device substrate Material can flexibly be attached at large curved surface hull surface, and aircraft real-time online measuring is facilitated to work;Device integral thickness is lower than 100 μm, stream field interference is small.
Four, Detailed description of the invention
Fig. 1 be one kind proposed by the present invention it is novel can be used for the soft of underwater turbulent boundary layer wall surface fluctuation pressure measurement Property base microsensor schematic diagram
Fig. 2 is the processing step schematic diagram of flexible base fluctuation pressure microsensor proposed by the present invention
In figure: 1- top electrode and lead, electrode and lead under 2-, 3- metallic elastic layer, 4- piezoelectric membrane, 5- insulating layer, 6- flexible substrate, 7- insulating protective layer.
Five, specific embodiment
In the present embodiment, it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test, mainly Including top electrode gold and lead 1, lower electrode titanium and lead 2, aluminum metal elastic layer 3, vanadium ion doping zinc-oxide piezoelectric membrane 4, Silicon dioxide insulating layer 5, polyimide flex substrate 6, c-type Parylene protective layer 7.
The manufacturing method key step of microsensor is as follows:
Step 1: spin coating PDMS in rigid glass substrates surface makes flexible polyimide film substrate and hard as binder Substrate tight bond, and carry out standard cleaning;With reference to attached drawing 2 (a).
Sub-step 1: rigid glass substrates cleaning;
Sub-step 2: glass substrate surface spin coating PDMS;
Sub-step 3: the Kapton with a thickness of 50 microns is attached at the glass surface that spin coating has PDMS, is vacuumized It stands;
Sub-step 4:RCA standard cleaning technique;
Step 2: it is sequentially prepared aluminum metal elastic layer, silicon dioxide insulating layer and graphical on Kapton surface, Form unit fabric;With reference to attached drawing 2 (b) (c).
Sub-step 1: in Kapton surface magnetic control sputtering 1um metallic aluminium;
Sub-step 2: 200nm dioxy is deposited on aluminum metal layer surface using plasma reinforced chemical vapour deposition (PECVD) SiClx is as insulating layer;
Step 3: graphical aluminum metal elastic layer, silicon dioxide insulating layer form unit fabric;With reference to attached drawing 2 (c)。
Sub-step 1: gluing, soft baking, photoetching, development, post bake;
Sub-step 2:RIE etched features silica;
Sub-step 3: wet etching patterned metal aluminium;
Sub-step 4: removing photoresist, cleaning;
Step 4: electrode under sensing unit is prepared on fabric, and graphical;With reference to attached drawing 2 (d).
Sub-step 1: gluing, soft baking, photoetching, development, post bake;
Sub-step 2: magnetron sputtering 200nm Titanium;
Sub-step 3: removing of removing photoresist, under it is electrode patterning;
Step 5: preparing ZnO sensitive thin film in lower electrode surface, image conversion simultaneously forms lower electrode fairlead;With reference to attached drawing 2 (e)。
Sub-step 1: magnetron sputtering zno piezoelectric thin film;
Sub-step 2: gluing, soft baking, photoetching, development, post bake;
Sub-step 3: wet etching patterned oxide zinc piezoelectric membrane, and form lower electrode fairlead;
Sub-step 4: removing photoresist, cleaning;
Step 6: preparing sensing unit top electrode, and graphical;With reference to attached drawing 2 (f).
Sub-step 1: gluing, soft baking, photoetching, development, post bake;
Sub-step 2: vapor deposition 100nm metallic gold;
Sub-step 3: removing photoresist, cleaning;
Step 8: device front side protective discharges sensing unit;With reference to attached drawing 2 (g).
Sub-step 1: device front spin coating photoresist;
Sub-step 2: glass carrier is heated to 80 DEG C, by the separation of polyimide substrate and PDMS;
Sub-step 3: Du Pont's dry film photoresist is attached at the polyimide substrate back side using dedicated chip mounter, passes through chip mounter Soft diaphragm realizes the bonding of dry film and device in chamber;
Sub-step 4: photoetching, development;
Sub-step 5:RIE etches polyimide substrate back cavity structure;
Step 8: the Parylene C of device front deposition 2um does protective layer;With reference to attached drawing 2 (h).

Claims (12)

1. can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test, which is characterized in that main packet Include top electrode and lead 1, lower electrode and lead 2, metallic elastic layer 3, piezoelectric membrane 4, insulating layer 5, flexible substrate 6, polymer Insulating protective layer 7;It is respectively metallic elastic layer 3, insulating layer 5 in the flexible substrate 6, constitutes sensor sensing unit bottom knot Structure;Electrode and lead 2 form the sensing unit of " sandwich structure " formula under top electrode and lead 1- piezoelectric membrane 4-, are placed in insulation On layer 5;There is back chamber at 6 back side of the flexible substrate position corresponding with sensing unit;Entire sensor surface is heavy Product has polymer insulation protective layer 7.
2. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1, It is characterized in that, zno piezoelectric thin film of the piezoelectric membrane 4 using ion doping.
3. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1, It is characterized in that, the lower electrode 2 uses Titanium.
4. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1, It is characterized in that, the insulating layer 5 uses silica or silicon nitride material.
5. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1, It is characterized in that, the polymer insulation protective layer 7 uses c-type Parylene.
6. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1, It is characterized in that, the flexible substrate 6 uses Kapton.
7. the flexible base micro sensing that one kind can be used for underwater turbulent boundary layer wall surface fluctuation pressure measurement as described in claim 1 The manufacturing method of device, which is characterized in that including following key step:
Step 1: 6 surface spin coating PDMS of flexible substrate keeps flexible polyimide film substrate and hard substrates tight as binder Close bonding, and carry out standard cleaning;
Step 2: being sequentially prepared metallic elastic layer 3, insulating layer 5 on 6 surface of flexible substrate;
Step 3: patterned metal elastic layer 3, insulating layer 5 form unit fabric
Step 4: electrode and lead 2 under being prepared on fabric;
Step 5: preparing sensitive thin film in lower electrode and 2 surface of lead, image conversion obtains piezoelectric membrane 4, and forms lower electrode and draw Portal;
Step 6: preparation top electrode and lead 1;
Step 7: flexible substrate 6 carries on the back chamber etching, discharges sensing unit.
Step 8: device overall surface deposited polymer insulating protective layer 7.
8. the flexible base micro sensing that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7 The manufacturing method of device, which is characterized in that in the step 2, insulating layer 5 uses silica, and silicon dioxide insulating layer prepares work Skill is plasma reinforced chemical vapour deposition, realized by reactive ion etching it is graphical, it is graphical after silicon dioxide layer do For the hard exposure mask of bottom aluminium elastic layer wet etching.
9. the flexible base micro sensing that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7 The manufacturing method of device, which is characterized in that in the step 4, piezoelectric membrane 4 is led to using the zno piezoelectric thin film of ion implanting Cross magnetron sputtering deposition preparation.
10. the micro- biography of flexible base that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7 The manufacturing method of sensor, which is characterized in that in the step 3 and 5, the image conversion technique of upper/lower electrode be metal lift-off material or Wet-etching technology.
11. the micro- biography of flexible base that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7 The manufacturing method of sensor, which is characterized in that in the step 6, polymer insulation protective layer 7 uses c-type parylene film.
12. the micro- biography of flexible base that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7 The manufacturing method of sensor, which is characterized in that in the step 7, by protecting sensing unit in device front spin coating photoresist, Back chamber moulding process is assisted using dry film photoresist, photoetching PI film in the back side discharges sensing unit.
CN201810830681.2A 2018-07-26 2018-07-26 A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method Pending CN109141731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810830681.2A CN109141731A (en) 2018-07-26 2018-07-26 A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810830681.2A CN109141731A (en) 2018-07-26 2018-07-26 A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method

Publications (1)

Publication Number Publication Date
CN109141731A true CN109141731A (en) 2019-01-04

Family

ID=64799121

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810830681.2A Pending CN109141731A (en) 2018-07-26 2018-07-26 A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method

Country Status (1)

Country Link
CN (1) CN109141731A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110519675A (en) * 2019-09-29 2019-11-29 北京信息科技大学 Submarine navigation device acoustic intelligence electronics perceives skin and preparation method thereof
CN110589754A (en) * 2019-09-12 2019-12-20 复旦大学 Flexible underwater pressure sensor and preparation method thereof
CN110793708A (en) * 2019-11-15 2020-02-14 联合微电子中心有限责任公司 Piezoelectric type MEMS acoustic sensor
CN113080888A (en) * 2021-04-08 2021-07-09 中国科学院空天信息创新研究院 Flexible array man-machine cooperative pulse diagnosis instrument
CN113465795A (en) * 2021-07-01 2021-10-01 西北工业大学 Flexible pressure sensing structure and flexible pressure sensor
CN113524158A (en) * 2021-07-14 2021-10-22 中国人民解放军国防科技大学 Rigid-flexible composite micro structure with embedded sensing function and preparation method thereof
CN113532722A (en) * 2021-05-25 2021-10-22 北京临近空间飞行器系统工程研究所 Flight test pulsating pressure data-based double-spectrum analysis transition identification method
CN114166416A (en) * 2021-12-08 2022-03-11 中国船舶科学研究中心 Correction method for turbulent pulsating pressure
CN114383715A (en) * 2022-03-24 2022-04-22 青岛国数信息科技有限公司 Micro-column piezoelectric acoustic current sensor device and underwater vehicle

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170990A (en) * 1996-05-27 1998-01-21 日本碍子株式会社 Piezoelectric film-type element
CN1790765A (en) * 2004-12-17 2006-06-21 中国科学院声学研究所 Silicon micro piezoelectric sensor chip and its preparing method
JP2009139338A (en) * 2007-12-10 2009-06-25 Seiko Epson Corp Semiconductor pressure sensor, its manufacturing method, semiconductor device, and electronic apparatus
CN103086320A (en) * 2013-01-21 2013-05-08 西北工业大学 Novel manufacturing method of hot wire micro-sensor with flexible wall surface
CN105280804A (en) * 2014-06-13 2016-01-27 Tdk株式会社 Piezoelectric device, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer apparatus
CN105606291A (en) * 2016-01-21 2016-05-25 清华大学 Thermal type pressure sensor and flexible electronic skin
CN106168515A (en) * 2015-05-18 2016-11-30 宝峰时尚国际控股有限公司 A kind of pressure transducer and preparation method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1170990A (en) * 1996-05-27 1998-01-21 日本碍子株式会社 Piezoelectric film-type element
CN1790765A (en) * 2004-12-17 2006-06-21 中国科学院声学研究所 Silicon micro piezoelectric sensor chip and its preparing method
JP2009139338A (en) * 2007-12-10 2009-06-25 Seiko Epson Corp Semiconductor pressure sensor, its manufacturing method, semiconductor device, and electronic apparatus
CN103086320A (en) * 2013-01-21 2013-05-08 西北工业大学 Novel manufacturing method of hot wire micro-sensor with flexible wall surface
CN105280804A (en) * 2014-06-13 2016-01-27 Tdk株式会社 Piezoelectric device, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer apparatus
CN106168515A (en) * 2015-05-18 2016-11-30 宝峰时尚国际控股有限公司 A kind of pressure transducer and preparation method thereof
CN105606291A (en) * 2016-01-21 2016-05-25 清华大学 Thermal type pressure sensor and flexible electronic skin

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110589754A (en) * 2019-09-12 2019-12-20 复旦大学 Flexible underwater pressure sensor and preparation method thereof
CN110519675A (en) * 2019-09-29 2019-11-29 北京信息科技大学 Submarine navigation device acoustic intelligence electronics perceives skin and preparation method thereof
CN110793708A (en) * 2019-11-15 2020-02-14 联合微电子中心有限责任公司 Piezoelectric type MEMS acoustic sensor
WO2021093796A1 (en) * 2019-11-15 2021-05-20 联合微电子中心有限责任公司 Piezoelectric mems acoustic sensor
CN110793708B (en) * 2019-11-15 2021-12-03 联合微电子中心有限责任公司 Piezoelectric type MEMS acoustic sensor
CN113080888A (en) * 2021-04-08 2021-07-09 中国科学院空天信息创新研究院 Flexible array man-machine cooperative pulse diagnosis instrument
CN113532722A (en) * 2021-05-25 2021-10-22 北京临近空间飞行器系统工程研究所 Flight test pulsating pressure data-based double-spectrum analysis transition identification method
CN113465795B (en) * 2021-07-01 2023-12-29 西北工业大学 Flexible pressure sensing structure and flexible pressure sensor
CN113465795A (en) * 2021-07-01 2021-10-01 西北工业大学 Flexible pressure sensing structure and flexible pressure sensor
CN113524158A (en) * 2021-07-14 2021-10-22 中国人民解放军国防科技大学 Rigid-flexible composite micro structure with embedded sensing function and preparation method thereof
CN113524158B (en) * 2021-07-14 2022-12-16 中国人民解放军国防科技大学 Rigid-flexible composite micro structure with embedded sensing function and preparation method thereof
CN114166416B (en) * 2021-12-08 2023-05-30 中国船舶科学研究中心 Turbulent flow pulsation pressure correction method
CN114166416A (en) * 2021-12-08 2022-03-11 中国船舶科学研究中心 Correction method for turbulent pulsating pressure
CN114383715A (en) * 2022-03-24 2022-04-22 青岛国数信息科技有限公司 Micro-column piezoelectric acoustic current sensor device and underwater vehicle

Similar Documents

Publication Publication Date Title
CN109141731A (en) A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method
CN109945966A (en) The single electrode hydrophone of AlN bilayer film
CN110589754B (en) Flexible underwater pressure sensor and preparation method thereof
CN106501376B (en) A kind of flexible passive wireless surface acoustic wave sensor and preparation method thereof
CN103630274B (en) A kind of flexure electric-type micropressure sensor based on MEMS (micro electro mechanical system)
Chen et al. Highly accurate airflow volumetric flowmeters via pMUTs arrays based on transit time
CN111678585B (en) High-sensitivity AlN piezoelectric hydrophone and preparation method thereof
CN106569155B (en) A kind of cantilever beam interdigital capacitor magnetic field sensing probe based on giant magnetostrictive thin film
JP2011529574A (en) Oscillating element sensor for detecting boundary layer transition 1
CN105716705B (en) Multiple stress concentration formula MEMS bionic hydrophones
CN105606201B (en) Combined type MEMS bionic hydrophones
CN109916501A (en) A kind of the MEMS hot type sound particle vibration velocity sensor and method of sound field enhancing micro-structure
CN109738097A (en) A kind of multifunction electronic skin and preparation method thereof, plane external force detection method
CN209166556U (en) Flowmeter transition time measuring device based on micromechanics piezoelectric supersonic wave transducer
EP4024015A1 (en) High-sensitivity magnetoresistive acoustic wave sensor and array device
CN108344496A (en) Piezoelectric type MEMS vector vibration transducers
CN206865720U (en) A kind of hydrophone
CN108955995A (en) The Sea-water pressure sensor and preparation method of quick response based on diamond thin
CN103630273A (en) Device for measuring quasi-static force via piezoelectric sensing element
CN108827523A (en) A kind of Sea-water pressure sensor and preparation method thereof based on diamond thin
CN206670783U (en) Based on the MEMS of piezo-electric effect with the spherical oscillator vector hydrophone of the vibration shape
CN110196124A (en) A kind of pressure sensor based on flexible SAW device
CN113720390B (en) Piezoelectric ultrasonic-vibration acceleration composite sensor and measuring device
CN106199466B (en) A kind of naval vessels monitoring magnetic field sensor
CN213397350U (en) Vector hydrophone and vector hydrophone unit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20190104