CN109141731A - A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method - Google Patents
A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method Download PDFInfo
- Publication number
- CN109141731A CN109141731A CN201810830681.2A CN201810830681A CN109141731A CN 109141731 A CN109141731 A CN 109141731A CN 201810830681 A CN201810830681 A CN 201810830681A CN 109141731 A CN109141731 A CN 109141731A
- Authority
- CN
- China
- Prior art keywords
- wall surface
- turbulent boundary
- flexible base
- microsensor
- pressure test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000010410 layer Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000012528 membrane Substances 0.000 claims abstract description 14
- 239000011241 protective layer Substances 0.000 claims abstract description 14
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 10
- 239000004744 fabric Substances 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 9
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 9
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 8
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 229920001721 polyimide Polymers 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000009530 blood pressure measurement Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000003068 static effect Effects 0.000 abstract 1
- 238000005259 measurement Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000011161 development Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 description 3
- 229960001296 zinc oxide Drugs 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 208000032364 Undersensing Diseases 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000009304 pastoral farming Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005325 percolation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000035485 pulse pressure Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001456 vanadium ion Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a kind of flexible base microsensor that can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing methods, belong to sensor technical field.The microsensor mainly includes top electrode and lead 1, lower electrode and lead 2, metallic elastic layer 3, piezoelectric membrane 4, insulating layer 5, flexible substrate 6, polymer insulation protective layer 7.It is respectively metallic elastic layer 3, insulating layer 5 in the flexible substrate 6, constitutes sensor sensing unit fabric；Electrode and lead 2 form the sensing unit of " sandwich structure " formula under top electrode and lead 1- piezoelectric membrane 4-, are placed on insulating layer 5.There is back chamber at 6 back side of the flexible substrate position corresponding with sensing unit, for balancing deep water static pressure；Entire sensor surface is deposited with polymer insulation protective layer 7.Flexible base fluctuation pressure microsensor uses the MEMS manufacturing process of standard, space time high resolution, and resonance frequency high, meets underwater pressure fluctuations beneath turbulent boundary lay wideband testing requirement, is convenient for array, is suitable for the attaching of submarine navigation device curved surface.
Description
One, fields:
The invention belongs to sensor technical fields, and being related to one kind can be used for underwater turbulent boundary layer wall surface surging pressure test
Flexible base microsensor and its manufacturing method.
Two, background technique:
Pressure fluctuations beneath turbulent boundary lay (Pressure fluctuation), also known as pressure fluctuation, be characterization boundary layer and
One of the most important parameter of hull near-wall model situation is to study turbulent boundary layer structure and its development, grasp boundary layer separation,
Turn to twist etc. the important evidence of flow regimes.Meanwhile on the one hand random pulse pressure directly generates radiated noise, on the other hand motivate
The vibration of object plane elastic construction generates radiated noise, therefore fluctuation pressure is also to cause the important sound source of hydrodynamic noise.With state
The sustainable development of anti-maritime affairs, to the stealthy anti-acoustic capability of submarine navigation device, more stringent requirements are proposed.Realize that fluctuation pressure is accurately more
Point measurement is significant to the promotion of aircraft performance, evaluation work, and realizes the technology of reducing noise and drag, active Flow Control
Basis.Now, waters Study on Flow Field depends on Numerical Simulation Analysis mostly, and traditional measurement sensor includes micro-microphone, water
Listening device etc. is hard substrate, and volume is relatively large, and array degree and installation are inconvenient, and are not suitable for measurement of curved surface.
The development of MEMS (MEMS) technology provides a kind of new tool for the measurement of wall surface fluctuation pressure.Using
The flexible base fluctuation pressure microsensor of MEMS technology processing has the characteristics that flexibility, micromation, array, integrated, right
The fine measurement of pressure fluctuations beneath turbulent boundary lay of underwater hull smooth surface, deep camber surface is applied with unique advantage.Example
Such as: document " Flexible and Surface-Mountable Piezoelectric Sensor Arrays for
Underwater Sensing in Marine Vehicles " in have developed a kind of underwater passive pressure based on piezoelectricity PZT and pass
Aircraft may be implemented to the passive detection of near field mobile object in sensor.Sensor array is encapsulated using PDMS flexible material, can
Detect the pressure signal of 1~200Hz.Document " Carbon black-PDMS composite conformal pressure
Sensor arrays for near-body flow detection " the percolation phenomenon system based on high polymer doping conducting particles
The sponge bulk underwater pressure sensor of standby Grazing condition PDMS doping carbon black is, it can be achieved that survey to underwater dynamic low-frequency pressure field
Amount.Although both the above pliable pressure sensor can carry out the test of underwater dynamic force field, precision is lower, only to low frequency
Fluctuation pressure signal is sensitive, can not achieve the fine measurement of underwater turbulent boundary layer wideband pressure fluctuation.
Three, summary of the invention
Goal of the invention:
It is aircraft reducing noise and drag, active Flow for the fine measurement for realizing underwater turbulent boundary layer wideband pressure fluctuation
Control provides Technical Reference, and the invention proposes a kind of flexible bases that can be used for underwater turbulent boundary layer wall surface surging pressure test
Microsensor and its manufacturing method.
Technical solution: refering to attached drawing 1, it can be used for the flexible base micro sensing of underwater turbulent boundary layer wall surface surging pressure test
Device mainly includesTop electrode and lead 1, lower electrode and lead 2, metallic elastic layer 3, piezoelectric membrane 4, insulating layer 5, flexible substrate 6, polymer insulation protective layer 7.It is respectively metallic elastic layer 3, insulating layer 5 in the flexible substrate 6, constitutes sensor sensing list First fabric；Electrode and lead 2 form the sensing unit of " sandwich structure " formula under top electrode and lead 1- piezoelectric membrane 4-, It is placed on insulating layer 5.There is back chamber at 6 back side of the flexible substrate position corresponding with sensing unit, it is quiet for balancing deep water Pressure；Entire sensor surface is deposited with polymer insulation protective layer 7.
As a kind of more optimal solution, zno piezoelectric thin film of the piezoelectric membrane 4 using ion doping, zinc oxide pressure
There is conductive film autonomous C axis oriented can be obviously improved film piezo-electric performance by ion doping.The lower electrode 2 is adopted
With Titanium, titanium is close with zinc oxide lattice constant, and mismatch is small, is conducive to zno piezoelectric thin film crystal orientation and grows.The insulating layer 5
The materials such as silica or silicon nitride can be used, consider that physical parameters, the silica such as thermal expansion coefficient, Young's modulus are more conducive to
Zno piezoelectric thin film growth.The polymer insulation protective layer 7 uses c-type Parylene (Parylene C),
Parylene C has better acid-alkali-corrosive-resisting and insulating properties, does not influence sensing unit response while protection device and surveys
Examination.The flexible substrate 6 uses Kapton, and high temperature resistant is up to 400 DEG C or more, long-term use temperature range 200~300
DEG C, there is high insulating property.
A kind of manufacturing method for the flexible base microsensor can be used for underwater turbulent boundary layer wall surface fluctuation pressure measurement, packet
Include following key step:
Step 1: 6 surface spin coating PDMS of flexible substrate makes flexible polyimide film substrate and hard lining as binder
Bottom tight bond, and carry out standard cleaning；
Step 2: being sequentially prepared metallic elastic layer 3, insulating layer 5 on 6 surface of flexible substrate；
Step 3: patterned metal elastic layer 3, insulating layer 5 form unit fabric
Step 4: electrode and lead 2 under being prepared on fabric；
Step 5: preparing sensitive thin film in lower electrode and 2 surface of lead, image conversion obtains piezoelectric membrane 4, and forms lower electricity
Pole fairlead；
Step 6: preparation top electrode and lead 1；
Step 7: flexible substrate 6 carries on the back chamber etching, discharges sensing unit.
Step 8: device overall surface deposited polymer insulating protective layer 7.
The beneficial effects of the present invention are:
The base material of flexibility base fluctuation pressure microsensor proposed by the present invention is flexible polyimide film, high temperature resistant
Up to 400 DEG C or more, 200~300 DEG C of long-term use temperature range, there is high insulating property.To improve device resonance frequency, meet
Underwater turbulence pulsation pressure wideband test characteristic, microsensor sensing unit use the zno piezoelectric thin film of ion doping, tool
There is high piezoelectric characteristic, response frequency is high, and measurement sensitivity is good；While using silica as insulating layer, device is improved
Overall stiffness.Device integrally encapsulates protection using the c-type Parylene of insulation acid-alkali-corrosive-resisting, is satisfied with the need tested under water
It asks.
It (1) can environmental work under water；Device integrally using the Parylene encapsulation acidproof, alkaline-resisting, corrosion resistance is strong, mentions
The high reliability of device underwater operation；Sensing unit is discharged, contacts sensitive thin film directly with extraneous flow field, to balance
Underwater hydrostatic pressure, further improves the sensitivity that sensor works under water.
(2) time, spatial resolution are high, and sensitivity is excellent, are convenient for array；The piezoelectric sensitivity unit size of sensor exists
The size of micron dimension, the microphones such as opposite grade micro-microphone, hydrophone has dropped a magnitude, and spatial resolution mentions
It is high；Zno piezoelectric thin film has high piezoelectric characteristic by ion doping, and sensitivity is excellent；Furthermore sensor is passed through orderly
Arrangement preparation facilitates array to design, the multiple spot for realizing pressure fluctuations beneath turbulent boundary lay is effectively smart on same PI film
Thin measurement.
(3) for flexible bendable, it can be achieved that hull curved surface directly attaches, stream field interference is small；Flexible PI film is as device substrate
Material can flexibly be attached at large curved surface hull surface, and aircraft real-time online measuring is facilitated to work；Device integral thickness is lower than
100 μm, stream field interference is small.
Four, Detailed description of the invention
Fig. 1 be one kind proposed by the present invention it is novel can be used for the soft of underwater turbulent boundary layer wall surface fluctuation pressure measurement
Property base microsensor schematic diagram
Fig. 2 is the processing step schematic diagram of flexible base fluctuation pressure microsensor proposed by the present invention
In figure: 1- top electrode and lead, electrode and lead under 2-, 3- metallic elastic layer, 4- piezoelectric membrane, 5- insulating layer,
6- flexible substrate, 7- insulating protective layer.
Five, specific embodiment
In the present embodiment, it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test, mainly
Including top electrode gold and lead 1, lower electrode titanium and lead 2, aluminum metal elastic layer 3, vanadium ion doping zinc-oxide piezoelectric membrane 4,
Silicon dioxide insulating layer 5, polyimide flex substrate 6, c-type Parylene protective layer 7.
The manufacturing method key step of microsensor is as follows:
Step 1: spin coating PDMS in rigid glass substrates surface makes flexible polyimide film substrate and hard as binder
Substrate tight bond, and carry out standard cleaning；With reference to attached drawing 2 (a).
Sub-step 1: rigid glass substrates cleaning；
Sub-step 2: glass substrate surface spin coating PDMS；
Sub-step 3: the Kapton with a thickness of 50 microns is attached at the glass surface that spin coating has PDMS, is vacuumized
It stands；
Sub-step 4:RCA standard cleaning technique；
Step 2: it is sequentially prepared aluminum metal elastic layer, silicon dioxide insulating layer and graphical on Kapton surface,
Form unit fabric；With reference to attached drawing 2 (b) (c).
Sub-step 1: in Kapton surface magnetic control sputtering 1um metallic aluminium；
Sub-step 2: 200nm dioxy is deposited on aluminum metal layer surface using plasma reinforced chemical vapour deposition (PECVD)
SiClx is as insulating layer；
Step 3: graphical aluminum metal elastic layer, silicon dioxide insulating layer form unit fabric；With reference to attached drawing 2
(c)。
Sub-step 1: gluing, soft baking, photoetching, development, post bake；
Sub-step 2:RIE etched features silica；
Sub-step 3: wet etching patterned metal aluminium；
Sub-step 4: removing photoresist, cleaning；
Step 4: electrode under sensing unit is prepared on fabric, and graphical；With reference to attached drawing 2 (d).
Sub-step 1: gluing, soft baking, photoetching, development, post bake；
Sub-step 2: magnetron sputtering 200nm Titanium；
Sub-step 3: removing of removing photoresist, under it is electrode patterning；
Step 5: preparing ZnO sensitive thin film in lower electrode surface, image conversion simultaneously forms lower electrode fairlead；With reference to attached drawing 2
(e)。
Sub-step 1: magnetron sputtering zno piezoelectric thin film；
Sub-step 2: gluing, soft baking, photoetching, development, post bake；
Sub-step 3: wet etching patterned oxide zinc piezoelectric membrane, and form lower electrode fairlead；
Sub-step 4: removing photoresist, cleaning；
Step 6: preparing sensing unit top electrode, and graphical；With reference to attached drawing 2 (f).
Sub-step 1: gluing, soft baking, photoetching, development, post bake；
Sub-step 2: vapor deposition 100nm metallic gold；
Sub-step 3: removing photoresist, cleaning；
Step 8: device front side protective discharges sensing unit；With reference to attached drawing 2 (g).
Sub-step 1: device front spin coating photoresist；
Sub-step 2: glass carrier is heated to 80 DEG C, by the separation of polyimide substrate and PDMS；
Sub-step 3: Du Pont's dry film photoresist is attached at the polyimide substrate back side using dedicated chip mounter, passes through chip mounter
Soft diaphragm realizes the bonding of dry film and device in chamber；
Sub-step 4: photoetching, development；
Sub-step 5:RIE etches polyimide substrate back cavity structure；
Step 8: the Parylene C of device front deposition 2um does protective layer；With reference to attached drawing 2 (h).
Claims (12)
1. can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test, which is characterized in that main packet
Include top electrode and lead 1, lower electrode and lead 2, metallic elastic layer 3, piezoelectric membrane 4, insulating layer 5, flexible substrate 6, polymer
Insulating protective layer 7；It is respectively metallic elastic layer 3, insulating layer 5 in the flexible substrate 6, constitutes sensor sensing unit bottom knot
Structure；Electrode and lead 2 form the sensing unit of " sandwich structure " formula under top electrode and lead 1- piezoelectric membrane 4-, are placed in insulation
On layer 5；There is back chamber at 6 back side of the flexible substrate position corresponding with sensing unit；Entire sensor surface is heavy
Product has polymer insulation protective layer 7.
2. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1,
It is characterized in that, zno piezoelectric thin film of the piezoelectric membrane 4 using ion doping.
3. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1,
It is characterized in that, the lower electrode 2 uses Titanium.
4. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1,
It is characterized in that, the insulating layer 5 uses silica or silicon nitride material.
5. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1,
It is characterized in that, the polymer insulation protective layer 7 uses c-type Parylene.
6. it can be used for the flexible base microsensor of underwater turbulent boundary layer wall surface surging pressure test as described in claim 1,
It is characterized in that, the flexible substrate 6 uses Kapton.
7. the flexible base micro sensing that one kind can be used for underwater turbulent boundary layer wall surface fluctuation pressure measurement as described in claim 1
The manufacturing method of device, which is characterized in that including following key step:
Step 1: 6 surface spin coating PDMS of flexible substrate keeps flexible polyimide film substrate and hard substrates tight as binder
Close bonding, and carry out standard cleaning；
Step 2: being sequentially prepared metallic elastic layer 3, insulating layer 5 on 6 surface of flexible substrate；
Step 3: patterned metal elastic layer 3, insulating layer 5 form unit fabric
Step 4: electrode and lead 2 under being prepared on fabric；
Step 5: preparing sensitive thin film in lower electrode and 2 surface of lead, image conversion obtains piezoelectric membrane 4, and forms lower electrode and draw
Portal；
Step 6: preparation top electrode and lead 1；
Step 7: flexible substrate 6 carries on the back chamber etching, discharges sensing unit.
Step 8: device overall surface deposited polymer insulating protective layer 7.
8. the flexible base micro sensing that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7
The manufacturing method of device, which is characterized in that in the step 2, insulating layer 5 uses silica, and silicon dioxide insulating layer prepares work
Skill is plasma reinforced chemical vapour deposition, realized by reactive ion etching it is graphical, it is graphical after silicon dioxide layer do
For the hard exposure mask of bottom aluminium elastic layer wet etching.
9. the flexible base micro sensing that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7
The manufacturing method of device, which is characterized in that in the step 4, piezoelectric membrane 4 is led to using the zno piezoelectric thin film of ion implanting
Cross magnetron sputtering deposition preparation.
10. the micro- biography of flexible base that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7
The manufacturing method of sensor, which is characterized in that in the step 3 and 5, the image conversion technique of upper/lower electrode be metal lift-off material or
Wet-etching technology.
11. the micro- biography of flexible base that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7
The manufacturing method of sensor, which is characterized in that in the step 6, polymer insulation protective layer 7 uses c-type parylene film.
12. the micro- biography of flexible base that one kind can be used for underwater turbulent boundary layer wall surface surging pressure test as claimed in claim 7
The manufacturing method of sensor, which is characterized in that in the step 7, by protecting sensing unit in device front spin coating photoresist,
Back chamber moulding process is assisted using dry film photoresist, photoetching PI film in the back side discharges sensing unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810830681.2A CN109141731A (en) | 2018-07-26 | 2018-07-26 | A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810830681.2A CN109141731A (en) | 2018-07-26 | 2018-07-26 | A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109141731A true CN109141731A (en) | 2019-01-04 |
Family
ID=64799121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810830681.2A Pending CN109141731A (en) | 2018-07-26 | 2018-07-26 | A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109141731A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110519675A (en) * | 2019-09-29 | 2019-11-29 | 北京信息科技大学 | Submarine navigation device acoustic intelligence electronics perceives skin and preparation method thereof |
| CN110589754A (en) * | 2019-09-12 | 2019-12-20 | 复旦大学 | Flexible underwater pressure sensor and preparation method thereof |
| CN110793708A (en) * | 2019-11-15 | 2020-02-14 | 联合微电子中心有限责任公司 | Piezoelectric type MEMS acoustic sensor |
| CN113080888A (en) * | 2021-04-08 | 2021-07-09 | 中国科学院空天信息创新研究院 | Flexible array man-machine cooperative pulse diagnosis instrument |
| CN113465795A (en) * | 2021-07-01 | 2021-10-01 | 西北工业大学 | Flexible pressure sensing structure and flexible pressure sensor |
| CN113532722A (en) * | 2021-05-25 | 2021-10-22 | 北京临近空间飞行器系统工程研究所 | Flight test pulsating pressure data-based double-spectrum analysis transition identification method |
| CN113524158A (en) * | 2021-07-14 | 2021-10-22 | 中国人民解放军国防科技大学 | Rigid-flexible composite micro structure with embedded sensing function and preparation method thereof |
| CN114166416A (en) * | 2021-12-08 | 2022-03-11 | 中国船舶科学研究中心 | Correction method for turbulent pulsating pressure |
| CN114383715A (en) * | 2022-03-24 | 2022-04-22 | 青岛国数信息科技有限公司 | Micro-column piezoelectric acoustic current sensor device and underwater vehicle |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170990A (en) * | 1996-05-27 | 1998-01-21 | 日本碍子株式会社 | Piezoelectric film-type element |
| CN1790765A (en) * | 2004-12-17 | 2006-06-21 | 中国科学院声学研究所 | Silicon micro piezoelectric sensor chip and its preparing method |
| JP2009139338A (en) * | 2007-12-10 | 2009-06-25 | Seiko Epson Corp | Semiconductor pressure sensor, its manufacturing method, semiconductor device, and electronic apparatus |
| CN103086320A (en) * | 2013-01-21 | 2013-05-08 | 西北工业大学 | Novel manufacturing method of hot wire micro-sensor with flexible wall surface |
| CN105280804A (en) * | 2014-06-13 | 2016-01-27 | Tdk株式会社 | Piezoelectric device, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer apparatus |
| CN105606291A (en) * | 2016-01-21 | 2016-05-25 | 清华大学 | Thermal type pressure sensor and flexible electronic skin |
| CN106168515A (en) * | 2015-05-18 | 2016-11-30 | 宝峰时尚国际控股有限公司 | A kind of pressure transducer and preparation method thereof |
-
2018
- 2018-07-26 CN CN201810830681.2A patent/CN109141731A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1170990A (en) * | 1996-05-27 | 1998-01-21 | 日本碍子株式会社 | Piezoelectric film-type element |
| CN1790765A (en) * | 2004-12-17 | 2006-06-21 | 中国科学院声学研究所 | Silicon micro piezoelectric sensor chip and its preparing method |
| JP2009139338A (en) * | 2007-12-10 | 2009-06-25 | Seiko Epson Corp | Semiconductor pressure sensor, its manufacturing method, semiconductor device, and electronic apparatus |
| CN103086320A (en) * | 2013-01-21 | 2013-05-08 | 西北工业大学 | Novel manufacturing method of hot wire micro-sensor with flexible wall surface |
| CN105280804A (en) * | 2014-06-13 | 2016-01-27 | Tdk株式会社 | Piezoelectric device, piezoelectric actuator, piezoelectric sensor, hard disk drive, and inkjet printer apparatus |
| CN106168515A (en) * | 2015-05-18 | 2016-11-30 | 宝峰时尚国际控股有限公司 | A kind of pressure transducer and preparation method thereof |
| CN105606291A (en) * | 2016-01-21 | 2016-05-25 | 清华大学 | Thermal type pressure sensor and flexible electronic skin |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110589754A (en) * | 2019-09-12 | 2019-12-20 | 复旦大学 | Flexible underwater pressure sensor and preparation method thereof |
| CN110519675A (en) * | 2019-09-29 | 2019-11-29 | 北京信息科技大学 | Submarine navigation device acoustic intelligence electronics perceives skin and preparation method thereof |
| CN110793708A (en) * | 2019-11-15 | 2020-02-14 | 联合微电子中心有限责任公司 | Piezoelectric type MEMS acoustic sensor |
| WO2021093796A1 (en) * | 2019-11-15 | 2021-05-20 | 联合微电子中心有限责任公司 | Piezoelectric mems acoustic sensor |
| CN110793708B (en) * | 2019-11-15 | 2021-12-03 | 联合微电子中心有限责任公司 | Piezoelectric type MEMS acoustic sensor |
| CN113080888A (en) * | 2021-04-08 | 2021-07-09 | 中国科学院空天信息创新研究院 | Flexible array man-machine cooperative pulse diagnosis instrument |
| CN113532722A (en) * | 2021-05-25 | 2021-10-22 | 北京临近空间飞行器系统工程研究所 | Flight test pulsating pressure data-based double-spectrum analysis transition identification method |
| CN113465795A (en) * | 2021-07-01 | 2021-10-01 | 西北工业大学 | Flexible pressure sensing structure and flexible pressure sensor |
| CN113465795B (en) * | 2021-07-01 | 2023-12-29 | 西北工业大学 | Flexible pressure sensing structure and flexible pressure sensor |
| CN113524158A (en) * | 2021-07-14 | 2021-10-22 | 中国人民解放军国防科技大学 | Rigid-flexible composite micro structure with embedded sensing function and preparation method thereof |
| CN113524158B (en) * | 2021-07-14 | 2022-12-16 | 中国人民解放军国防科技大学 | Rigid-flexible composite micro structure with embedded sensing function and preparation method thereof |
| CN114166416A (en) * | 2021-12-08 | 2022-03-11 | 中国船舶科学研究中心 | Correction method for turbulent pulsating pressure |
| CN114166416B (en) * | 2021-12-08 | 2023-05-30 | 中国船舶科学研究中心 | Turbulent flow pulsation pressure correction method |
| CN114383715A (en) * | 2022-03-24 | 2022-04-22 | 青岛国数信息科技有限公司 | Micro-column piezoelectric acoustic current sensor device and underwater vehicle |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109141731A (en) | A kind of flexible base microsensor can be used for underwater turbulent boundary layer wall surface surging pressure test and its manufacturing method | |
| CN110589754B (en) | Flexible underwater pressure sensor and preparation method thereof | |
| CN109945966A (en) | The single electrode hydrophone of AlN bilayer film | |
| CN106501376B (en) | A kind of flexible passive wireless surface acoustic wave sensor and preparation method thereof | |
| Chen et al. | Highly accurate airflow volumetric flowmeters via pMUTs arrays based on transit time | |
| CN103630274B (en) | A kind of flexure electric-type micropressure sensor based on MEMS (micro electro mechanical system) | |
| CN111678585B (en) | High-sensitivity AlN piezoelectric hydrophone and preparation method thereof | |
| EP4024015A1 (en) | High-sensitivity magnetoresistive acoustic wave sensor and array device | |
| CN105716705B (en) | Multiple stress concentration formula MEMS bionic hydrophones | |
| CN109916501A (en) | A kind of the MEMS hot type sound particle vibration velocity sensor and method of sound field enhancing micro-structure | |
| CN105606201B (en) | Combined type MEMS bionic hydrophones | |
| CN106706108A (en) | MEMS (micro-electromechanical system) co-vibration type spherical vibrator vector hydrophone based on piezoelectric effect | |
| CN209166556U (en) | Flowmeter transition time measuring device based on micromechanics piezoelectric supersonic wave transducer | |
| CN108490384A (en) | A kind of small space sound bearing detection device and its method | |
| CN205562027U (en) | Two -dimensional vector field hydrophone | |
| Zhang et al. | Research on the nested package structure of a MEMS vector hydrophone | |
| CN105737967A (en) | Two-dimensional vector field hydrophone | |
| CN108955995A (en) | The Sea-water pressure sensor and preparation method of quick response based on diamond thin | |
| CN108344496A (en) | Piezoelectric type MEMS vector vibration transducers | |
| CN208795359U (en) | Two dimension is the same as vibration shape vector hydrophone | |
| CN206865720U (en) | A kind of hydrophone | |
| CN115265752B (en) | Coaxial encapsulation attitude self-calibration MEMS vector hydrophone | |
| CN110320519A (en) | A kind of expression of spatial data and fast display method | |
| CN108827523A (en) | A kind of Sea-water pressure sensor and preparation method thereof based on diamond thin | |
| CN206670783U (en) | Based on the MEMS of piezo-electric effect with the spherical oscillator vector hydrophone of the vibration shape |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190104 |