CN109945966A - The single electrode hydrophone of AlN bilayer film - Google Patents
The single electrode hydrophone of AlN bilayer film Download PDFInfo
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- CN109945966A CN109945966A CN201910250643.4A CN201910250643A CN109945966A CN 109945966 A CN109945966 A CN 109945966A CN 201910250643 A CN201910250643 A CN 201910250643A CN 109945966 A CN109945966 A CN 109945966A
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Abstract
The new structural piezoelectric hydrophone of the present invention mainly includes vacuum chamber, the piezoelectric structure of the double-deck AlN film above vacuum chamber.When piezoelectric layer above vacuum chamber receives acoustic signals, film on cavity can generate deformation, and due to the piezoelectric effect of AlN film, film surface can generate polarization charge, to generate faint electric signal, acoustic signals are detected by external signal deteching circuit.For the hydrophone due to using piezoelectric material AlN film, which has many advantages, such as that acoustic impedance is low, and acoustics couples height, high temperature high voltage resistant, detection bandwidth and chemical property and stablizes.The double-deck piezoelectric thin-film structure can sufficiently improve the piezoelectric property of AlN film, can simplify technique as single electrode based on metal molybdenum, improve yield rate.MEMS hydrophone acoustic signals Observational frequency band is wide, high sensitivity, compatible with CMOS, nontoxic, the fields such as process control suitable for the acoustical signal processing in deep-sea field, biosensor technique and complex industrial environment.
Description
Technical field
The present invention relates to hydrophone field, specially a kind of broadband, high temperature high voltage resistant, anti-noise ability are strong and highly sensitive
Hydrophone.
Background technique
Hydrophone is the device that can measure sound field in fluid based on the manufacture of marine acoustics principle.But with people couple
The deeply development with military science and technology of ocean research, the frequency for needing to detect signal constantly reduces, for underwater acoustic measurement system
Line-spectrum detection ability, the requirement of the ability of anti-interference ability and anti-isotropic noise are higher and higher.Low frequency, miniaturization, battle array
Columnization, low-power consumption, low cost become the important directions that hydrophone develops.Traditional hydrophone has been shown much insufficiently
Side.Traditional hydrophone has bigger volume, and weight is bigger, and acoustics coupling is low, and sensitivity is lower, anti-noise jamming energy
The problems such as power is weak, and microelectromechanical systems (MEMS) hydrophone based on micrometer-nanometer processing technology is able to satisfy these requirements, MEMS
The acoustic impedance of hydrophone is low so that it has very high acoustics coupling, small in volume, low-power consumption, signal detection frequency band
Width, and it is easy to integrated with matched electronic product.
MEMS hydrophone can be divided into piezoelectric type hydrophone and pressure resistance type hydrophone according to sensing principle.Pressure resistance type MEMS arrow
The micro-structure vector hydrophone that amount hydrophone is processed using piezoresistive principles, its advantage is that structure designs and prepares
Technology is quite mature.But its disadvantage is also relatively more, and pressure resistance type hydrophone is active device, needs external power supply, Er Qieyou
The disadvantages of antinoise is poor, sensitivity is also relatively low, temperature drift is big, engineer application is inconvenient.Piezoelectric type hydrophone, comparing has
Representative piezoelectric material has PZT, and there are also AlN, PZT piezoelectric membranes to have extraordinary piezoelectric property by ZnO, and piezoelectric modulus is very
Height has preferable low frequency characteristic and relatively high sensitivity.But the hydrophone that is processed into of PZT piezoelectric membrane there are volume compared with
Greatly, the disadvantages of at high cost.
Summary of the invention
Existing hydrophone volume is big, frequency band is narrow, sensitivity is not high and is dfficult to apply to deep-sea in order to solve by the present invention
The problem of detection, provides broadband, the high sensitivity, high pressure resistant water of a kind of stagged electrode structure based on AlN materials double-layer film
Listen device.
The present invention is achieved by the following technical scheme:
A kind of single electrode hydrophone of AlN bilayer film, including base silicon, after the base silicon surface etch goes out hanging cavity configuration
It is bonded with SOI piece, is formed and seal hanging chamber；Substrate of the remaining 2.5 μm of buried oxide layers as piezoelectric membrane after the SOI piece etching,
The AlN buffer layer of 50nm, the lower electrode layer of 100nm, 1.0 μm of AlN piezoelectric thin film layer, 0.5 μm are successively sputtered on the substrate
SiO2Mask layer, aperture are sequentially etched SiO2Lower electrode layer, the SiO are drawn after mask layer and AlN piezoelectric thin film layer2It covers
The upper electrode layer of 200nm is sputtered in film layer.
The high sensitivity, the working principle of broadband hydrophone are as follows:
1, piezoelectric layer structure is based on AlN film design into double-layer film structure, and lower layer's AlN thin film buffer layer facilitates hearth electrode molybdenum
110 crystal orientation preferential growths, 110 crystal orientation of hearth electrode growth gets well facilitate upper layer 002 crystal orientation of AlN piezoelectric membrane growth, mention
High tension performance.And then AlN film excellent physical property and chemical property can be given full play to, enhancing hydrophone anti-noise ability,
The performances such as high sensitivity, high temperature high voltage resistant, are applicable to deep-sea detecting, and structure design is the innovation in piezoelectric hydrophone field.
2, the hanging cavity configuration below piezoelectric thin film layer can ensure that the piezoelectric thin film layer on upper layer sufficiently vibrates, and improve spirit
Sensitivity；Hearth electrode is set as single electrode, and simplification of flowsheet improves integrated level and yield rate.
3, the primary structure of the miniature hydrophone based on AlN film will be designed to the single electrode knot of the double-deck piezoelectric membrane
Structure is bonded on silicon supporting layer, is designed as cavity structure below silicon supporting layer, using aluminium nitride-molybdenum as piezoelectricity function film,
The neutral axis structure of synthesis is set to be located at silicon supporting layer, therefore when there is incoming signal on film in the positive and negative electrode of top and bottom
On positive and negative charge can be generated due to the very sensitive piezoelectric effect of AlN film.
4, the film of hydrophone possesses sufficiently high equivalent spring constant should carry out signal inspection to underwater fluid pressure
It surveys, and the design structure has very high linearity range under very big dynamic pressure, and has on a wide frequency band very well
Response, on the other hand, the design of bilayer film also makes it have enough sensitivity and noise resolution rate.
The present invention has rational design, and AlN film, which is applied to piezoelectric transducer, can well solve other MEMS piezoelectricity water
The Railway Project of device is listened, AlN film has very low acoustic impedance relative to other piezoelectric membranes, and acoustics couples very high, this material
Expect nontoxic, compatible with CMOS technology is its a big advantage；There are also detection, signal band is wide, integrated level is high and high temperature high voltage resistant etc.
Advantage.In the structure design of piezoelectric hydrophone, it is most important that the performance of Yao Tigao piezoelectric material, first, piezoelectricity deposit material
The selection of material piezoelectric membrane performance is influenced it is very big, in most of MEMS application, all can using single crystal silicon material as AlN or
Substrate when person ZnO is deposited, and for special applications as hydrophone, need piezoelectric material envisaged underneath metal layer in this way
Extra play, piezoelectric material is typically between two conductive layers, and the quality of conductive layer directly affects the crystal of piezoelectric material
Structure, and then its piezoelectric property is influenced, common piezoelectric material has Ti electrode, Al electrode, Au electrode and Pt electrode, the present invention to set
Bottom electrode of the Mo electrode as AlN is preferably used in meter, AlN is deposited on Mo more superior than having on other electrodes
Performance, Mo electrode is low as ultra-thin materials resistivity, and Mo has higher acoustic attenuation intensity compared with Pt, selects molybdenum as water
Listen the metal material of the bottom electrode of device.The second, the AlN thin film buffer layer of one layer of 50nm is grown in advance in the top layer silicon of SOI,
It can be conducive to 110 crystal orientation of preferred orientation of hearth electrode Mo, the preferred orientation of hearth electrode Mo is good for growing AIN piezoelectric membrane
The preferred orientation growth of 002 crystal orientation is more preferable, and the piezoelectric membrane piezoelectric property grown in this way is more preferable.In addition, bottom electrode is arranged to
Stagged electrode structure can simplify process flow, improve integrated level and yield rate.
Detailed description of the invention
Fig. 1 shows product preparation process flow process charts.
Fig. 2 indicates single vibration unit module map of the invention.
Fig. 3 indicates sample surfaces array of figure of the invention.
Fig. 4 indicates array of figure of the sample after seawater impregnates 120 hours.
Fig. 5 indicates the sample array figure after high pressure resistant 12.0MPa test.
Fig. 6 a indicates the quality factor figure of structure C OMSOL emulation.
Fig. 6 b indicates the admittance result of structure C OMSOL emulation.
In figure: 1- base silicon, 2- seal hanging chamber, 3-AlN buffer layer, 4- lower electrode layer, 5-SiO2Mask layer, 6- lining
Bottom, 7-AlN piezoelectric thin film layer, 8- upper electrode layer, 9- top layer positive electrode connect disk.
Specific embodiment
Carry out the present invention will be described in detail specific embodiment with reference to the accompanying drawing.
The present invention is based on third generation semiconductor material AlN to make piezoelectric hydrophone, specifically based on the novel knot of AlN film
The piezoelectric hydrophone of structure.AlN piezoelectric membrane has acoustic impedance low, and acoustics couples height, high temperature high voltage resistant, detection bandwidth and chemistry
The advantages that property is stablized.The hydrophone is designed to bilayer film and bottom stagged electrode structure on the basis of AlN piezoelectric membrane, solution
It has determined the problems such as traditional hydrophone sensitivity is low, frequency band of detection is narrow and anti-noise ability is weak.
As shown in Fig. 2, the bilayer film single electrode hydrophone vibration unit structure based on AlN material, including base silicon 1,
1 surface etch of base silicon is bonded after going out hanging cavity configuration with SOI piece, is formed and is sealed hanging chamber 2；It is 2.5 μm remaining after SOI piece etching
Substrate 6 of the buried oxide layer as piezoelectric membrane successively sputters (bottom) electrode layer under the AlN buffer layer 3 of 50nm, 100nm on substrate 6
4, the SiO of 7,0.5 μm of 1.0 μm of AlN piezoelectric thin film layer2Mask layer 5, aperture are sequentially etched SiO2Mask layer 5 and AlN piezoelectricity
Lower electrode layer 4, SiO is drawn after film layer 72Upper (just) electrode layer 8 of 200nm is sputtered on mask layer 5.
Wherein, sealing hanging chamber 2, upper layer piezoelectric structure can sufficiently be vibrated, and improves sensitivity.The double-deck piezoelectric membrane refers to
The AlN thin film buffer layer 3 of 50nm and 1.0 μm of AlN piezoelectric thin film layer 7 as piezoelectric layer, the design of AlN buffer layer 3 will
110 preferred orientations of hearth electrode molybdenum are largely improved, and then improve 002 preferred orientation of AlN piezoelectric membrane, it is thin to improve AlN
The piezoelectric property of film, the final sensitivity for improving hydrophone.AlN piezoelectric thin film layer 7 determines the performance of hydrophone, including sensitive
The performances such as degree, anti-noise ability, broadband.Bottom electrode layer 4 is used as negative electrode, the design of bottom single electrode by simplification of flowsheet,
The risk for reducing MEMS microfabrication improves the yield rate of sample, and aperture (connecing disk as hearth electrode) passes through etching SiO2
Mask layer and AlN piezoelectric thin film layer are drawn negative electrode and are connect with external test circuitry.SiO2Mask layer 5 protects AlN piezoelectric membrane
Layer 7 is not damaged in MEMS processing, that is, AlN piezoelectric layer 7 is avoided to be corroded in technique process by solution such as acid, alkali.It is double
2.5 μm of 6 thickness of monocrystalline substrate of layer film.Positive electrode aluminium layer is SiO of the 200nm sputter thickness in aperture2On mask layer.
Hanging chamber 2 is sealed above with the piezoelectric structure of bilayer film, the piezoelectric layer above vacuum chamber receives sound
When wave signal, the film on cavity can generate deformation, and due to the piezoelectric effect of AlN film, film surface can generate polarization charge,
To generate faint electric signal, acoustic signals are detected by external signal deteching circuit.The hydrophone is new due to using
Type piezoelectric material AlN film, the piezoelectric membrane have acoustic impedance low, and acoustics couples height, high temperature high voltage resistant, detection bandwidth and change
Learn the advantages that property is stablized.The double-deck piezoelectric thin-film structure of design can sufficiently improve the piezoelectric property of AlN film, be based on metal
Molybdenum can simplify technique as single electrode, improve yield rate.The MEMS hydrophone acoustic signals Observational frequency band designed in this way is wide, clever
Sensitivity is high, compatible with CMOS, nontoxic, suitable for the acoustical signal processing in deep-sea field, biosensor technique and complex industrial ring
The fields such as the process control in border.
It is above-mentioned that hydrophone, MEMS micro Process mistake are designed based on novel semiconductor material AlN bilayer film and stagged electrode structure
Journey is as follows, and process is as shown in Figure 1.
(1), the RCA that super flat silicon wafer (base silicon) and SOI carry out standard is cleaned, is dried with nitrogen.
(2), super flat Surface machining of silicon wafer, patterns hanging cavity configuration, and a schemes as shown in figure 1.
(3), clean SOI top layer silicon face and patterned super flat silicon wafer are subjected to Si-Si bonding, b schemes as shown in figure 1.
(4), the disk being bonded progress SOI bottom silicon is thinned, is thinned to 50 μm of residue, is polished.
(5), disk fixture shield is lived in into row SOI bottom silicon wet etching, buried oxide layer SiO2As stop-layer.
(6), RIE dry etching removes buried oxide layer, is left 2.5 μm of silicon thin film and the cavity structure of super flat silicon wafer formation,
C schemes as shown in figure 1.
(7), Mo layers of AlN buffer layer, 100nm metal, 1.0 μm of the AlN piezoelectricity for successively sputtering 50nm in 2.5 μm of silicon faces are thin
Film layer, 0.5 μm of SiO2Mask layer, d schemes as shown in figure 1.
(8), the method Patterned masking layer SiO of RIE dry etching2, aperture (connects disk as hearth electrode)；AlN is carried out again
Etching draws hearth electrode Mo, and e schemes as shown in figure 1.
(9), disk surfaces sputter 200nm metal Al, Al surface metal pattern, form positive electrode array, as shown in figure 1 f
Figure.There is the vibration unit of 40 × 40 arrays on a piece of hydrophone sample, top layer positive electrode connects disk 9 and connect with external test circuitry.
(10), scribing is scratched sample ready-made on disk with scribing machine.
The single electrode hydrophone structure of the bilayer film based on AlN film is ultimately formed, all vibration units pass through aluminium electricity
Pole and company, when receiving extraneous acoustical signal, 40 × 40 piezoelectric membrane arrays vibrate simultaneously will increase current signal, listen to improve water
The sensitivity of device and anti-noise ability.Each layer film thickness of the hydrophone is the optimal ginseng emulated by COMSOL
Number has broadband, high sensitivity, the performances such as anti-noise ability is strong, high pressure resistant, integrated level is high.
As shown in figure 4, sample is after seawater impregnates 120 hours, sample surfaces have no evidence of corrosion, and membrane array is still advised
It is whole orderly, it is seen that the sample resistance to corrosion seawater is stronger.
As shown in figure 5, the sample after high pressure resistant 12.0MPa test, according to static pressure formula, an atmospheric pressure is equivalent to the depth of water
10.03 meters, one atmospheric pressure of every increase, the depth of water increases by 10 meters.1atm=0.101MPa, 12.0MPa are equivalent to 1200 meters of seawater
Depth.Test result shows that vibration film is still good, is not in the presence of damaged fragmentation.
The quality factor simulation result of the sample design structure as shown in Figure 6 a at low frequency, the higher explanation of quality factor
The sample of the design structure has good anti-noise ability and higher sensitivity under low frequency characteristic.
As a result, admittance simulation value is higher, the linearity is good, illustrates this for the admittance of structure C OMSOL emulation as shown in Figure 6 b
The anti-noise ability of the sample detector signal of design structure is strong.
The present invention creatively utilizes double-layer film structure to improve piezoelectric property, simplifies technique stream using stagged electrode structure
Journey improves integrated level and yield rate.The design structure has enhancing anti-noise ability, improves the performances such as sensitivity, high temperature high voltage resistant,
The adaptive capacity to environment for greatling improve device has great application prospect in terms of solving deep-sea detecting.Compared to traditional
Hydrophone, the present invention are to realize bilayer film single electrode using MEMS micro-processing technology based on novel semi-conductor piezoelectric material
Piezoelectric layer structure.
The marked improvement that the present invention has is as follows:
1, using novel deposition tube thin-film material AlN, using its high temperature high voltage resistant, acoustic impedance is small, detection bandwidth and
The advantages that chemical property is stablized realizes the detection of deep-sea acoustic signals.
2, using the AlN piezoelectric structure of bilayer film, 110 preferred orientations of bottom electrode molybdenum can be improved, molybdenum is preferentially
It is orientated the 002 crystal orientation preferred orientation that AlN piezoelectric membrane can be improved, to improve the piezoelectric property of AlN piezoelectric thin film layer.
3, stagged electrode structure as bottom electrode and is designed to using molybdenum, on the one hand since molybdenum has very high acoustic attenuation strong
Sensitivity can be improved in degree, low super thin metal resistivity；On the other hand it can simplify technique, improve yield and yield rate.
4, the SiO at top2Mask layer can adequately protect AlN film in technique process, to ensure its pressure
Electrical property is unaffected.
A kind of scheme for implementing to provide to the present invention above is discussed in detail, for those of ordinary skill in the art, foundation
The thought of the present embodiment, there will be changes in the specific implementation manner and application range.In conclusion the content of the present specification
It should not be construed as limiting the invention, all any changes made according to design philosophy of the present invention are all in protection scope of the present invention
Within.
Claims (2)
1. a kind of single electrode hydrophone of AlN bilayer film, it is characterised in that: including base silicon (1), base silicon (1) table
Face is bonded after etching hanging cavity configuration with SOI piece, is formed and is sealed hanging chamber (2)；It is buried for remaining 2.5 μm after the SOI piece etching
Substrate (6) of the oxygen layer as piezoelectric membrane successively sputters the AlN buffer layer (3) of 50nm, the lower electricity of 100nm on the substrate (6)
Pole layer (4), 1.0 μm of AlN piezoelectric thin film layer (7), 0.5 μm of SiO2Mask layer (5), aperture are sequentially etched SiO2Mask layer
(5) and AlN piezoelectric thin film layer (7) draws lower electrode layer (4), the SiO afterwards2200nm upper electrode layer is sputtered on mask layer (5)
(8).
2. the single electrode hydrophone of AlN bilayer film according to claim 1, it is characterised in that: the lower electrode layer (4)
Material is Mo, and upper electrode layer (8) material is Al.
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| CN111609915A (en) * | 2020-05-25 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
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| CN111807313A (en) * | 2020-06-18 | 2020-10-23 | 中北大学 | MEMS piezoelectric hydrophone based on anodic bonding technology and preparation method thereof |
| CN111816755A (en) * | 2020-06-18 | 2020-10-23 | 中北大学 | AlN-based piezoelectric MEMS hydrophone and preparation method thereof |
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| CN110987159B (en) * | 2019-12-18 | 2022-09-16 | 京东方科技集团股份有限公司 | Sound pressure sensor |
| CN111609915A (en) * | 2020-05-25 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
| CN111609915B (en) * | 2020-05-25 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
| CN111678585A (en) * | 2020-06-18 | 2020-09-18 | 中北大学 | High-sensitivity AlN piezoelectric hydrophone and preparation method thereof |
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| CN111816755A (en) * | 2020-06-18 | 2020-10-23 | 中北大学 | AlN-based piezoelectric MEMS hydrophone and preparation method thereof |
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| CN114034377B (en) * | 2021-09-28 | 2024-03-22 | 青岛国数信息科技有限公司 | Double-layer AIN piezoelectric film hydrophone chip unit, chip and hydrophone |
| CN114034377A (en) * | 2021-09-28 | 2022-02-11 | 青岛国数信息科技有限公司 | Double-layer AIN piezoelectric film hydrophone chip unit, chip and hydrophone |
| CN114034370A (en) * | 2021-09-28 | 2022-02-11 | 青岛国数信息科技有限公司 | AIN piezoelectric film hydrophone chip unit, chip and hydrophone |
| CN114112010A (en) * | 2022-01-26 | 2022-03-01 | 青岛国数信息科技有限公司 | Acoustic measurement unit and device for ultra-low frequency underwater acoustic signal detection |
| CN117177131A (en) * | 2023-11-02 | 2023-12-05 | 青岛国数信息科技有限公司 | Piezoelectric acoustic chip unit for isolating interconnection lines, chip and application |
| CN117177131B (en) * | 2023-11-02 | 2024-04-12 | 青岛国数信息科技有限公司 | Piezoelectric acoustic chip unit for isolating interconnection lines, chip and application |
| CN117213616A (en) * | 2023-11-09 | 2023-12-12 | 中北大学 | Piezoelectric hydrophone unit with stress release structure |
| CN117213616B (en) * | 2023-11-09 | 2024-01-26 | 中北大学 | Piezoelectric hydrophone unit with stress release structure |
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