CN107438213B - Hydrophone and manufacturing process thereof - Google Patents
Hydrophone and manufacturing process thereof Download PDFInfo
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- CN107438213B CN107438213B CN201710420511.2A CN201710420511A CN107438213B CN 107438213 B CN107438213 B CN 107438213B CN 201710420511 A CN201710420511 A CN 201710420511A CN 107438213 B CN107438213 B CN 107438213B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/44—Special adaptations for subaqueous use, e.g. for hydrophone
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a hydrophone, which has small volume, is easy to manufacture into a large-scale array, has high sensitivity and good linearity, has ultrahigh noise resolution, comprises an ASIC wafer and a sensor wafer, wherein the ASIC wafer comprises an ASIC circuit layer and a silicon substrate layer, columnar bulges are formed on the silicon substrate layer, the sensor wafer comprises a silicon supporting layer, the silicon substrate layer is upwards bonded with the lower surface of the silicon supporting layer in vacuum to form a cavity, the upper surface of the silicon supporting layer is formed into a composite layer of an upper metal conducting layer, a piezoelectric material layer and a lower metal conducting layer, the upper metal conducting layer and the lower metal conducting layer respectively extend outwards to form an upper extension part and a lower extension part, the composite layer is wrapped in a passivation layer, the upper end of the upper metal conducting layer is provided with an acoustic inlet opening which is in acoustic communication with the environment, and the hydrophone further comprises a through hole, the upper end of the TSV through hole is connected with the upper extension part and the lower extension part, and the lower end of the TSV through hole is connected with a solder ball.
Description
Technical Field
The invention relates to the technical field of hydrophones, in particular to a hydrophone and a manufacturing process thereof.
Background
Hydrophones, also called underwater microphones, can convert acoustic signals generated by underwater pressure changes into electrical signals, so that underwater pressure can be reliably obtained, and the hydrophones are often used for acoustic field researches such as sound field mapping, acoustic sensor detection calibration, ultrasonic equipment detection calibration and performance evaluation. With the continuous development and progress of scientific technology, the application technology of the hydrophone is gradually developed and matured.
In the prior art, most hydrophones are made of piezoelectric ceramic materials or composite materials. However, the acoustic impedance of the longitudinal direction and the transverse direction of the piezoelectric ceramic material is far higher than that of the water medium due to the structure of the hydrophone made of the piezoelectric ceramic material, so that most of acoustic field energy in water is reflected at the interface where the water contacts with the ceramic, and the overall performance of the hydrophone is poor and the sensitivity of the hydrophone is low. Meanwhile, in the prior art, although the hydrophone made of the composite material can achieve higher sensitivity by setting a large enough capacitance, the large capacitance leads to the large size of the hydrophone, is difficult to miniaturize, and seriously affects the portability and applicability of use. The prior art lacks a miniature hydrophone with high sensitivity.
Disclosure of Invention
In order to solve the problems, the invention provides the hydrophone which has small volume, is easy to manufacture into a large-scale array, has high sensitivity, good linearity and ultrahigh noise resolution, and also provides a manufacturing process of the hydrophone.
The technical scheme is as follows: a hydrophone, characterized in that: the sensor wafer comprises an ASIC wafer and a sensor wafer, wherein the ASIC wafer comprises an ASIC circuit layer and a silicon substrate layer, a groove is formed in the silicon substrate layer, columnar protrusions are formed in the groove through etching, the silicon substrate layer is upwards bonded with the lower surface of the silicon support layer in a vacuum mode to form a cavity, a composite layer which is an upper metal conducting layer, a piezoelectric material layer and a lower metal conducting layer from top to bottom is formed on the upper surface of the silicon support layer, the upper metal conducting layer and the lower metal conducting layer respectively extend outwards to form an upper extension portion and a lower extension portion, the composite layer is wrapped in a passivation layer, an acoustic access opening which is acoustically communicated with the environment is formed in the upper end of the upper metal conducting layer, the sensor wafer further comprises TSV through holes which are respectively vertically penetrated through the silicon support layer and the wafer, the upper ends of the TSV through holes are respectively connected with the upper extension portion and the lower extension portion, and the lower ends of the TSV through holes are connected with the ASIC which grows below the ASIC circuit layer.
Further, the upper metal conductive layer and the lower metal conductive layer are Mo layers, respectively.
Further, the piezoelectric material layer is an AlN layer.
Further, the TSV through hole is filled with conductive metal.
A manufacturing process of a hydrophone is characterized in that: the method comprises the following steps:
step 1: providing an ASIC wafer, thinning a silicon substrate layer of the ASIC wafer, and then etching to form grooves and columnar protrusions;
step 2: bonding the silicon substrate of the ASIC wafer obtained in the step 1 upwards with the lower surface of the silicon supporting layer in vacuum to form a cavity;
step 3: the upper surface of the silicon supporting layer is provided with a composite layer which is respectively an upper metal conducting layer, a piezoelectric material layer and a lower metal conducting layer from top to bottom through an SOI (silicon on insulator) process, a passivation layer is wrapped on the composite layer, and an acoustic inlet opening which is acoustically communicated with the environment is formed at the upper end of the upper metal conducting layer;
step 4: forming TSV through holes penetrating through the ASIC wafer and the sensor wafer corresponding to the upper extension part of the upper metal conductive layer and the lower extension part of the lower metal conductive layer respectively, wherein the upper ends of the TSV through holes are connected with the upper extension part and the lower extension part respectively;
step 6: and growing solder balls at the front lower end of the ASIC wafer to connect the lower ends of the TSV through holes.
Further, between the step 2 and the step 3, the upper end of the silicon support layer is thinned.
Further, the solder ball is made of any one of tin, indium, tin lead and tin silver copper solder.
Furthermore, the TSV through hole is formed by adopting a dry deep silicon etching process.
Further, the vacuum bonding of the ASIC wafer and the silicon support layer adopts a Si-Glass bonding process and a Si-Si bonding process.
According to the hydrophone disclosed by the invention, the AlN is taken as a piezoelectric material layer, the ALN has the advantages of wide band gap, high sound speed and the like, the sensitivity of the hydrophone can be improved, the ASIC wafer is provided with an ASIC circuit and a silicon substrate layer, a cavity is formed by vacuum bonding of the silicon substrate layer and the silicon support layer of the ASIC wafer, an air metal reflection interface is formed, sound waves are limited in the piezoelectric material, the leakage of the sound energy to the substrate is reduced, the sensitivity of the hydrophone is improved, the hydrophone has the advantages of good linearity and ultrahigh noise resolution, the farther distance can be detected, the weaker sound signal is obtained, and the hydrophone has important significance in large-scale civil fields such as marine exploration, channel monitoring, pipe network monitoring, underwater navigation and the like; the volume of the hydrophone is reduced by sharing the silicon substrate layer by the ASIC circuit and the hydrophone sensor, the volume of the hydrophone is reduced by virtue of the advantages of a semiconductor manufacturing technology, the size is small, the volume of the hydrophone wafer and the ASIC wafer is monolithically integrated, the volume of the hydrophone is smaller by adopting the TSV through holes, the hydrophone is easy to manufacture into a large-scale array, the electrical connection performance is better, meanwhile, the columnar protrusions are arranged in the cavity, the sensor wafer can be limited, the adhesion between the sensor wafer and the bottom surface of the cavity can be prevented, and the sensor wafer cannot be reset to cause the damage of the hydrophone.
Drawings
FIG. 1 is a schematic diagram of the structure of a hydrophone of the invention;
FIG. 2 is a schematic flow chart of steps a through c of the hydrophone manufacturing process of the invention;
fig. 3 is a schematic flow chart of steps d to f of the hydrophone manufacturing process of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, 2 and 3, a hydrophone according to the present invention includes an ASIC wafer 1 and a sensor wafer 2, the ASIC wafer 1 includes an ASIC circuit layer 3 and a silicon substrate layer 4, a recess 5 is provided on the silicon substrate layer 4, a columnar bump 6 is formed in the recess 5 by etching, the sensor wafer 2 includes a silicon supporting layer 7, the silicon substrate layer 4 is bonded to a lower surface of the silicon supporting layer 7 in vacuum to form a cavity 17, a composite layer of an upper metal conductive layer 8, a piezoelectric material layer 9 and a lower metal conductive layer 10 is formed on an upper surface of the silicon supporting layer 7 from top to bottom, the upper metal conductive layer 8 and the lower metal conductive layer 10 are Mo layers, the piezoelectric material layer 9 is an AlN layer, the upper metal conductive layer 8 and the lower metal conductive layer 10 are respectively extended outwards to form an upper extension 11 and a lower extension 12, the composite layer is wrapped in a passivation layer 13, an acoustic access opening 14 in acoustic communication with the environment is provided at an upper end of the upper metal conductive layer 8, the composite layer further includes a TSV 15 and a via hole 15 respectively provided vertically penetrating the silicon supporting layer 7 and the ASIC wafer 1, an upper end of the TSV 15 is respectively extended into the upper end of the TSV 11 and a lower end of the TSV hole 15 is respectively filled with a metal via hole 16 in the lower end of the TSV 3.
Referring to fig. 2 and 3, the manufacturing process of the hydrophone comprises the following steps:
step a: providing an ASIC wafer, thinning a silicon substrate layer of the ASIC wafer, and then etching to form grooves and columnar protrusions;
step b: c, bonding the silicon substrate of the ASIC wafer obtained in the step a upwards with the lower surface of the silicon supporting layer in vacuum to form a cavity, wherein the vacuum bonding of the ASIC wafer and the silicon supporting layer adopts a Si-Glass bonding process and a Si-Si bonding process;
step c: thinning the upper end of the silicon supporting layer;
step d: a composite layer which is a Mo layer, an AlN layer and a Mo layer from top to bottom is formed on the upper surface of the silicon supporting layer through an SOI (silicon on insulator) process, the Mo layer adopts a sputtering and evaporating process, the AlN layer adopts a deposition process, a passivation layer is wrapped on the composite layer, and an acoustic inlet opening which is acoustically communicated with the environment is formed at the upper end of the upper metal conducting layer;
step e: forming TSV through holes penetrating through the ASIC wafer and the sensor wafer by respectively corresponding to the upper extension part of the upper metal conductive layer and the lower extension part of the lower metal conductive layer, wherein the upper ends of the TSV through holes are respectively connected with the upper extension part and the lower extension part, and the TSV through holes are formed by adopting a dry deep silicon etching process;
step f: and growing solder balls at the front lower end of the ASIC wafer to connect the lower ends of the TSV through holes.
According to the hydrophone disclosed by the invention, the AlN is taken as a piezoelectric material layer, the ALN has the advantages of wide band gap, high sound speed and the like, the sensitivity of the hydrophone can be improved, the ASIC wafer is provided with an ASIC circuit and a silicon substrate layer, a cavity is formed by vacuum bonding of the silicon substrate layer and the silicon support layer of the ASIC wafer, an air metal reflection interface is formed, sound waves are limited in the piezoelectric material, the leakage of the sound energy to the substrate is reduced, the sensitivity of the hydrophone is improved, the hydrophone has the advantages of good linearity and ultrahigh noise resolution, the farther distance can be detected, the weaker sound signal is obtained, and the hydrophone has important significance in large-scale civil fields such as marine exploration, channel monitoring, pipe network monitoring, underwater navigation and the like; the volume of the hydrophone is reduced by sharing the silicon substrate layer by the ASIC circuit and the hydrophone sensor, the volume of the hydrophone is reduced by virtue of the advantages of a semiconductor manufacturing technology, the size is small, the volume of the hydrophone wafer and the ASIC wafer is monolithically integrated, the volume of the hydrophone is smaller by adopting the TSV through holes, the hydrophone is easy to manufacture into a large-scale array, the electrical connection performance is better, meanwhile, the columnar protrusions are arranged in the cavity, the sensor wafer can be limited, the adhesion between the sensor wafer and the bottom surface of the cavity can be prevented, and the sensor wafer cannot be reset to cause the damage of the hydrophone.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (3)
1. A manufacturing process of a hydrophone is characterized in that: the hydrophone comprises an ASIC wafer and a sensor wafer, wherein the ASIC wafer comprises an ASIC circuit layer and a silicon substrate layer, a groove is formed in the silicon substrate layer, columnar bulges are formed in the groove through etching, the sensor wafer comprises a silicon supporting layer, the silicon substrate layer is upwards bonded with the lower surface of the silicon supporting layer in vacuum to form a cavity, a composite layer which is respectively an upper metal conductive layer, a piezoelectric material layer and a lower metal conductive layer from top to bottom is formed on the upper surface of the silicon supporting layer, the upper metal conductive layer and the lower metal conductive layer respectively extend outwards to form an upper extension part and a lower extension part, the composite layer is wrapped in a passivation layer, the upper end of the upper metal conductive layer is provided with an acoustic access opening which is acoustically communicated with the environment, the sensor wafer further comprises TSV through holes which are respectively vertically arranged through the silicon supporting layer and the wafer, the upper ends of the TSV through holes are respectively connected with the upper extension part and the lower extension part, and the lower ends of the solder balls of the TSV through holes are respectively connected with the solder balls grown under the front surface of the ASIC wafer; the upper metal conductive layer and the lower metal conductive layer are Mo layers respectively; the piezoelectric material layer is an AlN layer; the TSV through holes are filled with conductive metal;
the manufacturing process comprises the following steps:
step 1: providing an ASIC wafer, thinning a silicon substrate layer of the ASIC wafer, and then etching to form grooves and columnar protrusions;
step 2: bonding the silicon substrate of the ASIC wafer obtained in the step 1 upwards with the lower surface of the silicon supporting layer in vacuum to form a cavity;
step 3: a composite layer which is respectively an upper metal conducting layer, a piezoelectric material layer and a lower metal conducting layer from top to bottom is formed on the upper surface of the silicon supporting layer through an SOI (silicon on insulator) process, a passivation layer is wrapped on the composite layer, and an acoustic inlet opening which is acoustically communicated with the environment is formed at the upper end of the upper metal conducting layer;
step 4: forming TSV through holes penetrating through the ASIC wafer and the sensor wafer corresponding to the upper extension part of the upper metal conductive layer and the lower extension part of the lower metal conductive layer respectively, wherein the upper ends of the TSV through holes are connected with the upper extension part and the lower extension part respectively;
step 5: growing solder balls at the front lower end of the ASIC wafer to connect the lower ends of the TSV through holes;
the solder ball is made of any one of tin, indium, tin lead and tin silver copper solder;
the vacuum bonding of the ASIC wafer and the silicon support layer adopts a Si-Glass bonding process and a Si-Si bonding process.
2. A hydrophone manufacturing process as recited in claim 1, wherein: and (3) between the step (2) and the step (3), thinning the upper end of the silicon support layer.
3. A hydrophone manufacturing process as recited in claim 1, wherein: the TSV through hole is formed by adopting a dry deep silicon etching process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710420511.2A CN107438213B (en) | 2017-06-06 | 2017-06-06 | Hydrophone and manufacturing process thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710420511.2A CN107438213B (en) | 2017-06-06 | 2017-06-06 | Hydrophone and manufacturing process thereof |
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| CN107438213A CN107438213A (en) | 2017-12-05 |
| CN107438213B true CN107438213B (en) | 2023-08-15 |
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| CN201710420511.2A Active CN107438213B (en) | 2017-06-06 | 2017-06-06 | Hydrophone and manufacturing process thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109945966A (en) * | 2019-03-29 | 2019-06-28 | 中北大学 | The single electrode hydrophone of AlN bilayer film |
| CN111811638A (en) * | 2019-04-12 | 2020-10-23 | 广州辰方互联信息科技有限公司 | Piezoelectric type induction unit and hydrophone applying same |
| CN111599914B (en) * | 2020-05-25 | 2024-01-30 | 中国电子科技集团公司第十三研究所 | Preparation method of MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
| CN111609915B (en) * | 2020-05-25 | 2022-06-10 | 中国电子科技集团公司第十三研究所 | MEMS piezoelectric sound pressure sensing chip based on elastic beam structure |
| CN115265854A (en) * | 2022-07-27 | 2022-11-01 | 南京高华科技股份有限公司 | Pressure sensor and preparation method thereof |
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| US8476809B2 (en) * | 2008-04-29 | 2013-07-02 | Sand 9, Inc. | Microelectromechanical systems (MEMS) resonators and related apparatus and methods |
| US8278152B2 (en) * | 2008-09-08 | 2012-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bonding process for CMOS image sensor |
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| CN103021983A (en) * | 2012-11-22 | 2013-04-03 | 北京工业大学 | Wafer level chip size package and manufacturing method thereof |
| CN103523745A (en) * | 2013-10-21 | 2014-01-22 | 安徽北方芯动联科微系统技术有限公司 | Si conductive post based wafer-level packaging method and monolithic integrated MEMS (Micro Electro Mechanical System) chip for same |
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