CN107271029A - A kind of hydrophone integration module and its manufacturing process - Google Patents
A kind of hydrophone integration module and its manufacturing process Download PDFInfo
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- CN107271029A CN107271029A CN201710419127.0A CN201710419127A CN107271029A CN 107271029 A CN107271029 A CN 107271029A CN 201710419127 A CN201710419127 A CN 201710419127A CN 107271029 A CN107271029 A CN 107271029A
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- 230000010354 integration Effects 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000004891 communication Methods 0.000 claims abstract description 24
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims description 27
- 239000002131 composite material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 7
- 230000007613 environmental effect Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000010295 mobile communication Methods 0.000 claims description 2
- 238000006664 bond formation reaction Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
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- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
- G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
- G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
- G01H11/08—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means using piezoelectric devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
- H01L2924/15192—Resurf arrangement of the internal vias
Abstract
The invention provides a kind of hydrophone integration module, its integrated level is high, feature-rich and its small volume, it is lightweight, readily satisfy the requirement of small size installation environment, including substrate, hydrophone sensors are provided with substrate, pressure sensor, communication module and asic chip, hydrophone sensors, pressure sensor, communication module and asic chip are individually enclosed in injection molded layers, hydrophone sensors upper end enters opening provided with sound, meet the sensing opening of ft connection in pressure sensor upper end, hydrophone sensors connect pressure sensor by wire and the electric conduction routing being arranged in substrate, hydrophone sensors and pressure sensor connect the electric conduction routing being arranged in substrate by wire respectively, communication module and asic chip connect electric conduction routing by soldered ball respectively, electric conduction routing connection is arranged on the bottom land on the lower surface of substrate, in addition, present invention also offers a kind of manufacturing process of hydrophone integration module.
Description
Technical field
The present invention relates to hydrophone technical field, specially a kind of hydrophone integration module and its manufacturing process.
Background technology
Hydrophone, also known as underwater microphone, pressure change under water can be produced acoustical signal and be converted to electric signal by it,
So as to reliably obtain pressure under water, it is commonly used for the mapping of sound field, the detection demarcation of sonic transducer and ultrasound and sets
The research of the field of acoustics such as standby testing calibration and Performance Evaluation.It is with the continuous development of scientific technology and progressive, hydrophone
Application technology is also developing progressively ripe.
In the prior art, hydrophone is generally all single device, and function is more single, it is necessary to which the component of many outsides is matched somebody with somebody
Close and cooperate, integrated level is low, causes the complicated of whole hydrophone device, size is difficult to do small, it is difficult to be miniaturized, seriously
It has impact on the portability and applicability used.
The content of the invention
In view of the above-mentioned problems, the invention provides a kind of hydrophone, its integrated level is high, feature-rich and its small volume,
It is lightweight, the requirement of small size installation environment is readily satisfied, in addition, present invention also offers a kind of system of hydrophone integration module
Make technique.
Its technical scheme is such：A kind of hydrophone integration module, including substrate, it is characterised in that：On the substrate
Be provided with hydrophone sensors, pressure sensor, communication module and asic chip, the hydrophone sensors, pressure sensor,
Communication module and asic chip are individually enclosed in injection molded layers, and the hydrophone sensors upper end is provided with what is connected with environmental acoustics
Sound enters opening, and the sensing opening of ft connection is met in the pressure sensor upper end, and the hydrophone sensors pass through wire
The pressure sensor, the hydrophone sensors and the pressure sensing are connected with the electric conduction routing being arranged in the substrate
Device connects the electric conduction routing being arranged in the substrate by wire respectively, and the communication module and the asic chip lead to respectively
Cross soldered ball and connect the electric conduction routing, the electric conduction routing connection is arranged on the bottom land on the lower surface of the substrate.
Further, the hydrophone sensors include first sensor wafer, the upper table of the first sensor wafer
Face forms columnar projections by etching, and the upper surface of the first sensor wafer and the lower surface of second sensor wafer are true
It is respectively upper metal conducting layer, pressure from top to bottom that sky, which is bonded together to form and formed on cavity, the upper surface of the second sensor wafer,
The composite bed of material layer, lower metal conducting layer, the edge of the composite bed is wrapped up in the passivation layer, the upper metal conducting layer
Stretch out to form upper extension and lower extension respectively with the lower metal conducting layer, the upper extension and the lower extension
Pad is respectively equipped with portion, the lower surface of the first sensor wafer is engaged with the upper surface of substrate, the hydrophone sensing
Device connects the electric conduction routing by pad respectively.
Further, the upper metal conducting layer and the lower metal conducting layer are respectively Mo layers.
Further, the piezoelectric material layer is AlN layers.
Further, the communication module is any one in bluetooth, wifi, mobile communication module.
Further, it is additionally provided with controller module on the substrate.
Further, it is additionally provided with power module on the substrate.
A kind of manufacturing process of hydrophone integration module, it is characterised in that：Comprise the following steps：
Step 1：First sensor wafer is provided, first sensor wafer is performed etching to form columnar projections；
Step 2：By the upper surface of the first sensor wafer obtained in step 1 and the lower surface vacuum key of second sensor wafer
Conjunction forms cavity；
Step 3：It is respectively upper metallic conduction from top to bottom that the upper surface of second sensor wafer is formed with by SOI technology
Layer, piezoelectric material layer, the composite bed of lower metal conducting layer, the edge of composite bed is wrapped up in passivation layer；
Step 4：Pad is set on the upper surface of the upper extension of upper metal conducting layer, in the downward of the lower metal conducting layer
Pad is set on the upper surface of extending portion, hydrophone sensors are obtained；
Step 5：Communication module chip and asic chip are mounted on substrate；
Step 6：The hydrophone sensors that pressure sensor and step 4 are obtained are fitted on substrate；
Step 7：Plastic packaging is carried out to substrate, hydrophone sensors upper end exposes the sound connected with environmental acoustics and enters opening, pressure
Expose the sensing opening having with ft connection in sensor upper end.
Further, between step 2 and step 3, reduction processing is carried out to the top of second sensor wafer.
The hydrophone integration module of the hydrophone of the present invention is integrated with hydrophone sensors, pressure sensor, communication module
And asic chip, current depth can be reacted by pressure sensor, can be visited with reference to hydrophone sensors and asic chip
The underwater signal of certain depth is surveyed, the acoustical signal detected is changed into electric signal, transferred out by communication module, is realized
Wireless data transmission；In addition, as needed, the hydrophone integration module of hydrophone of the invention can be with integrated manipulator and electricity
Source module, further enriches function；The hydrophone of the present invention is by the advantage of semiconductor fabrication, hydrophone sensors, pressure
Force snesor, communication module and asic chip are integrated on a plate base, and the volume of hydrophone may be reduced, while performance
It is enhanced, while its packaging technology difficulty is low, the complexity of PCB, good reliability can be reduced.
Brief description of the drawings
Fig. 1 is the structural representation of the hydrophone integration module of the present invention；
Fig. 2 for the manufacturing process of the hydrophone integration module of the present invention step a to step d schematic diagrames；
Fig. 3 for the manufacturing process of the hydrophone integration module of the present invention step e to step h schematic diagrames.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
See that being provided with water on Fig. 1, Fig. 2, Fig. 3, a kind of hydrophone integration module of the invention, including substrate 1, substrate 1 listens
Communication module is bluetooth in device sensor 2, pressure sensor 3, communication module 4 and asic chip 5, example of the present invention, and hydrophone is passed
Sensor 2, pressure sensor 3, communication module 4 and asic chip 5 are individually enclosed in injection molded layers 6, and the upper end of hydrophone sensors 2 is set
There is the sound connected with environmental acoustics to enter opening 7, the sensing opening 8 of ft connection is met in the upper end of pressure sensor 3, and hydrophone is passed
Sensor 2 connects pressure sensor 3, hydrophone sensors 2 and pressure by wire 9 and the electric conduction routing 10 being arranged in substrate 1
Sensor 3 connects the electric conduction routing 10 being arranged in substrate 1 by wire 9 respectively, and communication module 4 and asic chip 5 lead to respectively
The connection electric conduction routing 10 of soldered ball 11 is crossed, electric conduction routing 10 connects the bottom land 12 being arranged on the lower surface of substrate 1.
Hydrophone sensors 2 include first sensor wafer 21, and the upper surface of first sensor wafer 21 is by etching shape
Into columnar projections 22, the upper surface of first sensor wafer 21 and the lower surface vacuum bonding of second sensor wafer 23 are formed
It is respectively upper metal conducting layer 25, piezoelectric material layer from top to bottom to be formed on cavity 24, the upper surface of second sensor wafer 24
26th, the composite bed of lower metal conducting layer 27, upper metal conducting layer 25 and lower metal conducting layer 27 are respectively Mo layers, piezoelectric material layer
26 be AlN layers, and the edge of composite bed is wrapped in passivation layer 28, and upper metal conducting layer 25 and lower metal conducting layer 27 are outside respectively
Extension forms in upper extension 29 and lower extension 210, upper extension 29 and lower extension 210 and is respectively equipped with pad 211, first
The lower surface of sensor wafer 21 is engaged with the upper surface of substrate 1, and hydrophone sensors 2 connect conduction by pad 211 respectively
Cabling 10.
See Fig. 2, Fig. 3, the manufacturing process of hydrophone integration module of the invention comprises the following steps：
Step a：First sensor wafer is provided, first sensor wafer is performed etching to form columnar projections；
Step b：By the upper surface of the first sensor wafer obtained in step 1 and the lower surface vacuum key of second sensor wafer
Conjunction forms cavity；
Step c：Reduction processing is carried out to the top of second sensor wafer,
Step d：It is respectively upper metallic conduction from top to bottom that the upper surface of second sensor wafer is formed with by SOI technology
Layer, piezoelectric material layer, the composite bed of lower metal conducting layer, the edge of composite bed is wrapped up in passivation layer；
Step e：Pad is set on the upper surface of the upper extension of upper metal conducting layer, in the lower extension of lower metal conducting layer
Upper surface on pad is set, obtain hydrophone sensors；
Step f：Communication module chip and asic chip are mounted on substrate；
Step g：The obtained hydrophone sensors of pressure sensor and step d are fitted on substrate；
Step h：Plastic packaging is carried out to substrate, hydrophone sensors upper end exposes the sound connected with environmental acoustics and enters opening, pressure
Expose the sensing opening having with ft connection in sensor upper end.
The hydrophone integration module of the hydrophone of the present invention is integrated with hydrophone sensors, pressure sensor, communication module
And asic chip, current depth can be reacted by pressure sensor, can be visited with reference to hydrophone sensors and asic chip
The underwater signal of certain depth is surveyed, the acoustical signal detected is changed into electric signal, transferred out by communication module, according to
Need, the hydrophone integration module of hydrophone of the invention can further enrich function with integrated manipulator and power module；
The hydrophone of the present invention is by the advantage of semiconductor fabrication, hydrophone sensors, pressure sensor, communication module and ASIC
Integrated chip is on a plate base, and the volume of hydrophone may be reduced, while performance is enhanced, while its packaging technology
Difficulty is low, can reduce the complexity of PCB, good reliability.
Hydrophone sensors are using AlN as piezoelectric material layer, and ALN has the advantages that broad-band gap, the high velocity of sound can improve water and listen
The sensitivity of device, cavity is formd by the vacuum bonding of ASIC wafer and Silicon Wafer, air metallic reflection interface is formed, by sound
Ripple is limited in piezoelectric, reduces leakage of the acoustic energy to substrate, the sensitivity of hydrophone is lifted, with big bandwidth, Larger Dynamic
The advantages of scope and the more preferable linearity, farther distance, more weak acoustic signal can be detected, for seafari, navigation channel is monitored,
Pipe network monitoring, the extensive civil area such as underwater navigation is significant；Meanwhile, columnar projections are set in cavity, can be with
It is spacing to hydrophone sensors progress, the bottom surface adhesion of hydrophone sensors and cavity can be prevented, hydrophone sensors can not
Reset causes hydrophone to damage.
More than, it is only the present invention preferably embodiment, but protection scope of the present invention is not limited thereto, and it is any
Be familiar with the people of the technology disclosed herein technical scope in, the change or replacement that can be readily occurred in, should all cover this
Within the protection domain of invention.Therefore, protection scope of the present invention should be defined by scope of the claims.
Claims (9)
1. a kind of hydrophone integration module, including substrate, it is characterised in that：Hydrophone sensors, pressure are provided with the substrate
Force snesor, communication module and asic chip, the hydrophone sensors, pressure sensor, communication module and asic chip point
It is not encapsulated in injection molded layers, the hydrophone sensors upper end is provided with the sound connected with environmental acoustics and enters opening, the pressure
The sensing opening of ft connection is met in sensor upper end, and the hydrophone sensors are by wire and are arranged in the substrate
Electric conduction routing connects the pressure sensor, and the hydrophone sensors and the pressure sensor are set by wire connection respectively
The electric conduction routing in the substrate is put, the communication module and the asic chip connect the conduction by soldered ball respectively and walked
Line, the electric conduction routing connection is arranged on the bottom land on the lower surface of the substrate.
2. a kind of hydrophone integration module according to claim 1, it is characterised in that：The hydrophone sensors include the
One sensor wafer, the upper surface of the first sensor wafer forms columnar projections by etching, and the first sensor is brilliant
Round upper surface and the lower surface vacuum bonding formation cavity of second sensor wafer, the upper table of the second sensor wafer
Formed on face is respectively upper metal conducting layer, piezoelectric material layer, the composite bed of lower metal conducting layer, the composite bed from top to bottom
Edge parcel in the passivation layer, the upper metal conducting layer and the lower metal conducting layer stretch out to form extension respectively
It is respectively equipped with portion and lower extension, the upper extension and the lower extension under pad, the first sensor wafer
Surface is engaged with the upper surface of substrate, and the hydrophone sensors connect the electric conduction routing by pad respectively.
3. a kind of hydrophone integration module according to claim 2, it is characterised in that：The upper metal conducting layer and described
Lower metal conducting layer is respectively Mo layers.
4. a kind of hydrophone integration module according to claim 2, it is characterised in that：The piezoelectric material layer is AlN layers.
5. a kind of hydrophone integration module according to claim 1, it is characterised in that：The communication module be bluetooth,
Any one in wifi, mobile communication module.
6. a kind of hydrophone integration module according to claim 1, it is characterised in that：Controller is additionally provided with the substrate
Module.
7. a kind of hydrophone integration module according to claim 1, it is characterised in that：Power supply mould is additionally provided with the substrate
Block.
8. a kind of manufacturing process of hydrophone integration module, it is characterised in that：Comprise the following steps：
Step 1：First sensor wafer is provided, first sensor wafer is performed etching to form columnar projections；
Step 2：By the upper surface of the first sensor wafer obtained in step 1 and the lower surface vacuum key of second sensor wafer
Conjunction forms cavity；
Step 3：It is respectively upper metallic conduction from top to bottom that the upper surface of second sensor wafer is formed with by SOI technology
Layer, piezoelectric material layer, the composite bed of lower metal conducting layer, the edge of composite bed is wrapped up in passivation layer；
Step 4：Pad is set on the upper surface of the upper extension of upper metal conducting layer, in the downward of the lower metal conducting layer
Pad is set on the upper surface of extending portion, hydrophone sensors are obtained；
Step 5：Communication module chip and asic chip are mounted on substrate；
Step 6：The hydrophone sensors that pressure sensor and step 4 are obtained are fitted on substrate；
Step 7：Plastic packaging is carried out to substrate, hydrophone sensors upper end exposes the sound connected with environmental acoustics and enters opening, pressure
Expose the sensing opening having with ft connection in sensor upper end.
9. a kind of manufacturing process of hydrophone integration module according to claim 8, it is characterised in that：In step 2 and step
Between rapid 3, reduction processing is carried out to the top of second sensor wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710419127.0A CN107271029A (en) | 2017-06-06 | 2017-06-06 | A kind of hydrophone integration module and its manufacturing process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710419127.0A CN107271029A (en) | 2017-06-06 | 2017-06-06 | A kind of hydrophone integration module and its manufacturing process |
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| Publication Number | Publication Date |
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| CN107271029A true CN107271029A (en) | 2017-10-20 |
Family
ID=60064979
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710419127.0A Pending CN107271029A (en) | 2017-06-06 | 2017-06-06 | A kind of hydrophone integration module and its manufacturing process |
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| Country | Link |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111537054A (en) * | 2020-06-20 | 2020-08-14 | 南京元感微电子有限公司 | Pressure and underwater sound integrated sensor and preparation method thereof |
| CN117412218A (en) * | 2023-12-14 | 2024-01-16 | 青岛国数信息科技有限公司 | Hydrophone and manufacturing process |
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| CN111537054A (en) * | 2020-06-20 | 2020-08-14 | 南京元感微电子有限公司 | Pressure and underwater sound integrated sensor and preparation method thereof |
| CN111537054B (en) * | 2020-06-20 | 2020-09-29 | 南京元感微电子有限公司 | Pressure and underwater sound integrated sensor and preparation method thereof |
| CN117412218A (en) * | 2023-12-14 | 2024-01-16 | 青岛国数信息科技有限公司 | Hydrophone and manufacturing process |
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