CN207760033U - The fan-out package structure of MEMS hydrophone chips - Google Patents

The fan-out package structure of MEMS hydrophone chips Download PDF

Info

Publication number
CN207760033U
CN207760033U CN201721453112.8U CN201721453112U CN207760033U CN 207760033 U CN207760033 U CN 207760033U CN 201721453112 U CN201721453112 U CN 201721453112U CN 207760033 U CN207760033 U CN 207760033U
Authority
CN
China
Prior art keywords
wiring layers
mems
chip
rdl
hydrophones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201721453112.8U
Other languages
Chinese (zh)
Inventor
孙跃
林挺宇
徐庆泉
林海斌
赵晓宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Neway Microelectronics (wuxi) Co Ltd Shi
Original Assignee
Neway Microelectronics (wuxi) Co Ltd Shi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Neway Microelectronics (wuxi) Co Ltd Shi filed Critical Neway Microelectronics (wuxi) Co Ltd Shi
Priority to CN201721453112.8U priority Critical patent/CN207760033U/en
Application granted granted Critical
Publication of CN207760033U publication Critical patent/CN207760033U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Transducers For Ultrasonic Waves (AREA)

Abstract

The utility model provides the fan-out package structure of MEMS hydrophone chips, and excessive to solve MEMS hydrophones chip package process package dimension in the prior art, reliability is not good enough and complex process, problem of high cost, including:RDL wiring layers, MEMS hydrophone chips, the MEMS hydrophones flip-chip is on the upper surface of the RDL wiring layers;Functional chip, passive device and active device, the functional chip, the passive device and the active device are inverted in respectively on the upper surface of the RDL wiring layers;Encapsulated layer, the encapsulated layer are arranged on the upper surface of the RDL wiring layers, and the MEMS hydrophones chip, the functional chip, the passive device and the active device are enclosed in the encapsulated layer.

Description

The fan-out package structure of MEMS hydrophone chips
Technical field
The utility model is related to hydrophone technical fields, specially the fan-out package structure of MEMS hydrophones chip.
Background technology
Underwater pressure change can be generated acoustical signal and be converted to electric signal by hydrophone, also known as underwater microphone, So as to reliably obtain underwater pressure, it is commonly used for the mapping of sound field, the detection calibration of sonic transducer and ultrasound and sets The research of the field of acoustics such as standby testing calibration and Performance Evaluation.It is with the continuous development of science and technology and progressive, hydrophone Application technology is also gradually matured.
Existing piezoelectric mems hydrophone chip and each function module device are being connected on pcb board so independently It is wired up again with plastic casing afterwards, such packaged type is maximum to be disadvantageous in that package dimension is excessive, and reliability is inadequate Good and complex process, it is of high cost.
Utility model content
The shortcomings that for prior art described above, the purpose of this utility model is to provide the fans of MEMS hydrophone chips Go out type encapsulating structure, excessive to solve MEMS hydrophones chip package process package dimension in the prior art, reliability is not good enough And complex process, problem of high cost.
Its technical solution is such:The fan-out package structure of MEMS hydrophone chips, which is characterized in that including:
RDL wiring layers, the RDL wiring layers include upper surface and the lower surface opposite with the upper surface;
MEMS hydrophone chips, the MEMS hydrophones flip-chip is on the upper surface of the RDL wiring layers;
Functional chip, passive device and active device, the functional chip, the passive device and the active device Part is inverted in respectively on the upper surface of the RDL wiring layers;
Encapsulated layer, the encapsulated layer are arranged on the upper surface of the RDL wiring layers, and by the MEMS hydrophones core Piece, the functional chip, the passive device and the active device are enclosed in the encapsulated layer.
Further, the RDL wiring layers include the first RDL wiring layers and are stacked on the first RDL wiring layers The upper surface of 2nd RDL wiring layers, the first RDL wiring layers is equipped with copper post, the top surface of the encapsulated layer and the copper post Top surface maintain an equal level, between the first RDL wiring layers and the 2nd RDL wiring layers pass through copper post, scolding tin connection, the MEMS Hydrophone chip attachment is in the 2nd RDL wiring layers, the functional chip, the passive device and the active device point It is not inverted on the first RDL wiring layers.
Further, the lower surface of the 2nd RDL wiring layers is arranged with metal and soldered ball under soldered ball;
Further, the RDL wiring layers include metallic circuit and the dielectric that is arranged between the metallic circuit Layer, the MEMS hydrophones chip, the functional chip, the passive device and the active device pin be separately connected The metallic circuit, metal and the soldered ball are separately connected the metallic circuit under the copper post, the soldered ball.
Further, the passive device includes resistance, capacitance, inductance, filter, antenna, and the functional chip includes Dsp chip, the active device include booster circuit, reduction voltage circuit, driving circuit.
The utility model realizes the wafer-level packaging of MEMS hydrophone chips, by chip and functional chip entirety plastic packaging, envelope Dress size greatly reduces, and good reliability;Chip is encapsulated comprehensively using epoxide resin material, good reliability, encapsulating structure is adopted Simple in structure with RDL wiring layers, there is salient point on positive and negative both sides, do not need routing technique, also do not need high-cost silicon perforation work Skill (TSV), and can realize the encapsulation of MEMS hydrophone chips, reduce manufacturing process, reduce critical technological point, cost reduces;Together When the utility model realize the fan-out packages of MEMS hydrophones, the thin space having due to fan-out package technology itself, The high advantage of wiring density so that there are the advantages such as size is small using the MEMS hydrophones of this form encapsulation, while using fan The MEMS hydrophone RDL wiring layers for going out type encapsulation can be directly connected to the pin of chip, therefore good electric property, signal transduction When amplitude it is small, signal time delay can also shorten;Arranging multiplayer RDL wiring layers in the utility model, can meet that device is more, pin For the demand of pin number in the case of a fairly large number of;In addition multilayer RDL wiring layers can also provide reflux for signal transmission Path provides electro-magnetic screen layer etc., and signal transmission performance is more preferable.
Description of the drawings
The step of Fig. 1 is the first packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of a to step d;
The step of Fig. 2 is the first packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of e to step i;
The step of Fig. 3 is the first packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of j to step l;
The step of Fig. 4 is second of packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of a to step d;
The step of Fig. 5 is second of packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of e to step h;
The step of Fig. 6 is second of packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of i to step k;
The step of Fig. 7 is second of packaging method of the fan-out package structure of the MEMS hydrophone chips of the utility model The flow diagram of i to step k;
Fig. 8 is the fan-out package structural schematic diagram of the MEMS hydrophone chips of the utility model.
Specific implementation mode
See Fig. 8, the fan-out package structure of the MEMS hydrophone chips of the utility model, including:
RDL wiring layers, RDL wiring layers include the first RDL wiring layers 1 and are stacked on second on the first RDL wiring layers 1 RDL wiring layers 2, the upper surfaces of the first RDL wiring layers 1 are equipped with copper post 3, the first RDL wiring layers 1 and the 2nd RDL wiring layers 2 it Between connected by copper post 3, scolding tin, MEMS hydrophones chip 4 is mounted on the 2nd RDL wiring layers 2, functional chip 5, passive device 6 And active device 7 is inverted in respectively on the first RDL wiring layers 1, on the first RDL wiring layers 1 and the 2nd RDL wiring layers 2 respectively Equipped with encapsulated layer 8, the top surface of encapsulated layer 8 maintains an equal level with the top surface of copper post 3, and by MEMS hydrophones chip 4, functional chip 5, passive Device 6 and active device 7 are enclosed in encapsulated layer 8, and the lower surface of the 2nd RDL wiring layers 2 is arranged with 9 He of metal under soldered ball Soldered ball 10;
First RDL wiring layers 1 and the 2nd RDL wiring layers 2 respectively include metallic circuit 11 and setting metallic circuit 11 it Between insulating medium layer 12, MEMS hydrophones chip 4, functional chip 5, passive device 6 and active device 7 pin connect respectively Connect metallic circuit 11, metal 9 and soldered ball 10 are separately connected metallic circuit 11 under copper post 3, soldered ball.
Passive device 6 includes resistance, capacitance, inductance, filter, antenna, and functional chip 5 includes dsp chip, active device 7 include booster circuit, reduction voltage circuit, driving circuit.
See that Fig. 1 to Fig. 3, the packaging method of the first MEMS hydrophone chip of the utility model include the following steps:
Step a:Prepare the first interim support plate 131 and second of encapsulation and encapsulates interim support plate 132, the first interim support plate of encapsulation 131 and second encapsulate interim support plate 132 respectively glass substrate;Step b:Respectively in the first interim support plate 131 and second of encapsulation Encapsulate attachment adhesive tape layer 14 on interim support plate 132;Step c:Respectively in the interim interim load of the encapsulation of support plate 131 and second of the first encapsulation The first RDL wiring layers 1, the 2nd RDL wiring layers 2 are prepared on the adhesive tape layer 14 of plate 132;Step d:It sinks on the first RDL wiring layers 1 Product seed layer 15;Step e:Copper post 3 is prepared in the seed layer 15 that first encapsulates interim support plate 131;Step f:To seed layer 15 Carrying out dry etching makes the first RDL wiring layers 1 expose;
Step g:Prepare MEMS hydrophones chip 4, function element 5, passive device 6 and active device 7, MEMS water is listened In 4 upside-down mounting to the 2nd RDL wiring layers 2 of device chip, by function element 5, passive device 6 and 7 upside-down mounting of active device to the first RDL On wiring layer 1;
Step h:It is packaged using epoxide resin material, respectively by copper post 3, MEMS hydrophones chip 4 and function element 5, passive device 6, active device 7 are enclosed in encapsulated layer 8;
Step i:Based on interim 132 and the 2nd RDL wiring layers 2 of support plate of second encapsulation of the separation of adhesive tape layer 14 so that the 2nd RDL Expose the lower surface of wiring layer 2;
Step j:The gold of 2 lower surface of copper post 3 and the 2nd RDL wiring layers on the first RDL wiring layers 1 is connected by planting soldered ball Belong to circuit to realize the connection of the first RDL wiring layers 1 and the 2nd RDL wiring layers 2;
Step k:Based on interim 131 and the first RDL wiring layers 1 of support plate of first encapsulation of the separation of adhesive tape layer 14 so that the first RDL Expose the lower surface of wiring layer 1;
Step l:Metal 9 and soldered ball 10 under soldered ball are prepared under the lower surface of the first RDL wiring layers 1.
See that Fig. 4 to Fig. 7, the packaging method of second of MEMS hydrophone chip of the utility model include the following steps:
Step a:Prepare to encapsulate interim support plate 131, it is glass substrate to encapsulate interim support plate 131;Step b:It is interim in encapsulation Adhere to adhesive tape layer 14 on support plate 131;Step c:The first RDL wiring layers 1 are prepared on adhesive tape layer 14;Step d:In the first RDL cloth Deposited seed layer 15 on line layer 1;Step e:Copper post 3 is prepared in seed layer 15;Step f:Dry etching is carried out to seed layer 15 So that the first RDL wiring layers 1 expose;
Step g:Preparatory function device 5, passive device 6 and active device 7, by function element 5, passive device 6 and In active device 7 upside-down mounting to the first RDL wiring layers 1;
Step h:It is packaged using encapsulating material, by copper post 3,7 envelope of function element 5, passive device 6 and active device In 8 layers of encapsulation;
Step i:The 2nd RDL wiring layers 2 are prepared on encapsulated layer 8;
Step j:Prepare MEMS hydrophones chip 4, it will be 2 in 4 upside-down mounting to the 2nd RDL wiring layers of MEMS hydrophones chip;;
Step k:It is packaged using encapsulating material epoxy resin, MEMS hydrophones chip 4 is enclosed in encapsulated layer 8.
Step l:Interim 131 and the first RDL wiring layers 1 of support plate are encapsulated based on the separation of adhesive tape layer 13 so that the first RDL is connected up Expose the lower surface of layer 1;
Step m:Metal 9 and soldered ball 10 under soldered ball are prepared under the lower surface of the first RDL wiring layers 1.
The fan-out package structure of the MEMS hydrophone chips of the utility model, by chip and functional chip, passive device, Active device entirety plastic packaging, package dimension greatly reduces, and good reliability;Chip is encapsulated comprehensively using epoxide resin material, Good reliability, encapsulating structure uses RDL wiring layers, simple in structure, and there is salient point on positive and negative both sides and is not necessarily to TSV techniques, reduce Manufacturing process, reduces critical technological point, and cost reduces;The utility model realizes the fan-out package of MEMS hydrophones simultaneously, by In the high advantage of thin space, wiring density that fan-out package technology itself has so that using the MEMS of this form encapsulation Hydrophone has the advantages such as size is small, while can be directly connected to using the MEMS hydrophone RDL wiring layers of fan-out package The pin of chip, therefore good electric property, amplitude is small when signal transduction, and signal time delay can also shorten, in addition the utility model The encapsulation of MEMS hydrophone chips can facilitate stacked wafer to connect, the utility model by the way that copper post is arranged on RDL wiring layers Middle arranging multiplayer RDL wiring layers can meet in the case that device is more, pin number is more the needs of for pin number; In addition multilayer RDL wiring layers can also provide return flow path for signal transmission, provide electro-magnetic screen layer etc., signal transmission performance is more It is good.
More than, the only preferable specific implementation mode of the utility model, but the scope of protection of the utility model is not limited to In this, any people for being familiar with the technology is in the technical scope disclosed by the utility model, the change or replacement that can be readily occurred in, It should be covered within the scope of the utility model.Therefore, the scope of protection of the utility model should be with claim Subject to protection domain.

Claims (7)

  1. The fan-out package structure of 1.MEMS hydrophone chips, which is characterized in that it includes:
    RDL wiring layers, the RDL wiring layers include upper surface and the lower surface opposite with the upper surface;
    MEMS hydrophone chips, the MEMS hydrophones flip-chip is on the upper surface of the RDL wiring layers;
    Functional chip, passive device and active device, the functional chip, the passive device and the active device point It is not inverted on the upper surface of the RDL wiring layers;
    Encapsulated layer, the encapsulated layer are arranged on the upper surface of the RDL wiring layers, and by the MEMS hydrophones chip, institute Functional chip, the passive device and the active device is stated to be enclosed in the encapsulated layer.
  2. 2. the fan-out package structure of MEMS hydrophones chip according to claim 1, it is characterised in that:The RDL cloth Line layer includes the first RDL wiring layers and is stacked on the 2nd RDL wiring layers on the first RDL wiring layers, the first RDL cloth The upper surface of line layer is equipped with copper post, and the top surface of the encapsulated layer and the top surface of the copper post maintain an equal level, the first RDL wiring layers It is connected by copper post, scolding tin between the 2nd RDL wiring layers, the MEMS hydrophones chip attachment is in the 2nd RDL Wiring layer, the functional chip, the passive device and the active device are inverted in the first RDL wiring layers respectively On.
  3. 3. the fan-out package structure of MEMS hydrophones chip according to claim 2, it is characterised in that:Described second The lower surface of RDL wiring layers is arranged with metal and soldered ball under soldered ball.
  4. 4. the fan-out package structure of MEMS hydrophones chip according to claim 3, it is characterised in that:The RDL cloth Line layer includes metallic circuit and the insulating medium layer that is arranged between the metallic circuit, the MEMS hydrophones chip, described The pin of functional chip, the passive device and the active device is separately connected the metallic circuit, the copper post, described Metal and the soldered ball are separately connected the metallic circuit under soldered ball.
  5. 5. the fan-out package structure of MEMS hydrophones chip according to claim 1, it is characterised in that:The passive device Part includes resistance, capacitance, inductance, filter, antenna.
  6. 6. the fan-out package structure of MEMS hydrophones chip according to claim 1, it is characterised in that:The function core Piece includes dsp chip.
  7. 7. the fan-out package structure of MEMS hydrophones chip according to claim 1, it is characterised in that:The active device Part includes booster circuit, reduction voltage circuit, driving circuit.
CN201721453112.8U 2017-11-03 2017-11-03 The fan-out package structure of MEMS hydrophone chips Active CN207760033U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721453112.8U CN207760033U (en) 2017-11-03 2017-11-03 The fan-out package structure of MEMS hydrophone chips

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201721453112.8U CN207760033U (en) 2017-11-03 2017-11-03 The fan-out package structure of MEMS hydrophone chips

Publications (1)

Publication Number Publication Date
CN207760033U true CN207760033U (en) 2018-08-24

Family

ID=63178090

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201721453112.8U Active CN207760033U (en) 2017-11-03 2017-11-03 The fan-out package structure of MEMS hydrophone chips

Country Status (1)

Country Link
CN (1) CN207760033U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107758604A (en) * 2017-11-03 2018-03-06 纽威仕微电子(无锡)有限公司 The fan-out package structure and method of MEMS hydrophone chips
CN110246766A (en) * 2019-06-12 2019-09-17 上海先方半导体有限公司 A kind of fan-out packaging structure and its manufacturing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107758604A (en) * 2017-11-03 2018-03-06 纽威仕微电子(无锡)有限公司 The fan-out package structure and method of MEMS hydrophone chips
CN110246766A (en) * 2019-06-12 2019-09-17 上海先方半导体有限公司 A kind of fan-out packaging structure and its manufacturing method

Similar Documents

Publication Publication Date Title
CN107758604A (en) The fan-out package structure and method of MEMS hydrophone chips
US7245021B2 (en) Micropede stacked die component assembly
US7807502B2 (en) Method for fabricating semiconductor packages with discrete components
US7215018B2 (en) Stacked die BGA or LGA component assembly
US8872288B2 (en) Apparatus comprising and a method for manufacturing an embedded MEMS device
KR101485972B1 (en) Integrated circuit package system with offset stacked die
TWI469309B (en) Integrated circuit package system
JP6061937B2 (en) Microelectronic package having stacked microelectronic devices and method of manufacturing the same
CN104661164B (en) Semiconductor devices and the method for forming semiconductor devices
US8860215B2 (en) Semiconductor device and method of manufacturing the same
JP2008016729A (en) Manufacturing method for semiconductor device with double-sided electrode structure
CN208722864U (en) Multilayer chiop substrate and Multifunctional core wafer
TW200839971A (en) Chip package module
CN107342747A (en) SAW device wafer-thin encapsulating structure and its manufacture method
CN108028233A (en) It is used for realization the substrate, component and technology of multi-chip inversion chip package
CN107579009A (en) A kind of multi-chip laminated packaging structure and preparation method thereof
CN106548991A (en) Semiconductor packages, semiconductor element and its manufacture method
CN207760033U (en) The fan-out package structure of MEMS hydrophone chips
JP2007027526A (en) Dual-face electrode package and its manufacturing method
US10160637B2 (en) Molded lead frame package with embedded die
CN105810597B (en) The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure
KR101953089B1 (en) Lead frame-based chip carrier used in the fabrication of mems transducer packages
US20080237831A1 (en) Multi-chip semiconductor package structure
CN103208467A (en) Package module with embedded package and method for manufacturing the same
TW202106605A (en) Sensor and package assembly thereof

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant