CN105810597B - The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure - Google Patents
The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure Download PDFInfo
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- CN105810597B CN105810597B CN201610203980.4A CN201610203980A CN105810597B CN 105810597 B CN105810597 B CN 105810597B CN 201610203980 A CN201610203980 A CN 201610203980A CN 105810597 B CN105810597 B CN 105810597B
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- 239000002184 metal Substances 0.000 title claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 66
- 238000001914 filtration Methods 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 43
- 238000007747 plating Methods 0.000 claims abstract description 16
- 238000005520 cutting process Methods 0.000 claims abstract description 14
- 239000004568 cement Substances 0.000 claims description 20
- 239000003292 glue Substances 0.000 claims description 20
- 230000006698 induction Effects 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000011161 development Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 2
- 238000010030 laminating Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The present invention relates to a kind of manufacturing methods of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, the described method comprises the following steps：Step 1: taking a piece of surface sound filtering chip wafer；Step 2: preparing the first insulating layer Step 3: being bonded wafer trepanning and carrying out laminating step four, prepare second insulating layer Step 5: in buried via hole conducting resinl or plating metal embedment trepanning；Step 6 prepares second metal layer Step 7: plant ball carries out plant ball on second metal layer surface；Step 8: cutting cutting is divided into single product.A kind of manufacturing method of round metal chip level buried via hole type of the invention surface sound filtering chip encapsulating structure, it can provide a kind of surface acoustic filter part of more small area and volume, and have lower manufacturing cost.
Description
Technical field
The present invention relates to a kind of manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, belong to half
Conductor encapsulation technology field.
Background technology
Surface sound filter apparatus be widely used in RF and IF application, including pocket telephone, radiophone and
Various radio devices.It is filtered by using surface sound, to these electronic equipments into processing such as filtering, the delays of horizontal electrical signal.
Because of surface acoustical filter properties of product and design function demand, need to ensure that filtering chip functional area cannot contact any substance,
I.e. cavity structure designs.
Existing surface acoustic filter part encapsulating structure is that filtering chip is passed through conductive bump flip chip bonding and ceramic substrate
It is connected and is embedded in substrate cavity body completely, substrate surface adds metal cover to protect.But the cost of such structural metal lid is higher, and
And the flatness requirement of ceramic substrate and metal cover is relatively high, the case where being easy close bad.In addition other surfaces sound filters
The production method of device is that sealing or coating process seal module at the top of use, forms cavity structure.
The packaging method of existing surface acoustic filter part, flow is longer, and cost is higher, and structure size still compares
Greatly, more done in current electronic equipment under smaller trend trend, need constantly reduce electronic device and its used in surface
The weight and size of acoustic filter part.
Invention content
The technical problem to be solved by the present invention is to provide a kind of round metal chip level buried via hole type table for the above-mentioned prior art
The manufacturing method of face sound filtering chip encapsulating structure, it can provide a kind of surface acoustic filter part of more small area and volume, and
And there is lower manufacturing cost.
Technical solution is used by the present invention solves the above problems：A kind of round metal chip level buried via hole type surface sound filters core
The manufacturing method of chip package, the method includes following processing steps：
Step 1: taking a piece of surface sound filtering chip wafer；
Step 2: preparing the first insulating layer
One layer of certain thickness insulating cement is applied on the sound filtering chip wafer of surface with coating technique, with photoetching, development
Method removes electrode zone and the insulating cement of chip induction region position；
Step 3: being bonded wafer trepanning and being bonded
Take a piece of fitting wafer, first will be bonded wafer correspond to surface sound filtering chip wafer electrode above position into
Then row trepanning is fit together the fitting wafer for having completed trepanning by adhesive glue and surface sound filtering chip wafer,
To form cavity above chip induction region；
Step 4: preparing second insulating layer
One layer of insulating cement is applied on fitting wafer with coating technique, with photoetching, the method for development is by electrode zone position
Insulating cement removes；
Step 5: buried via hole
With in conducting resinl or plating metal embedment trepanning；
Step 6 prepares second metal layer
Second metal layer is prepared on the surface of conducting resinl or plating metal；
Step 7: cutting
Cutting is divided into single product.
Between the step 6 and step 7 plant ball is carried out on second metal layer surface.
A kind of manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, the method includes following
Processing step：
Step 1: taking a piece of surface sound filtering chip wafer；
Step 2: preparing the first insulating layer
One layer of certain thickness insulating cement is applied on the sound filtering chip wafer of surface with coating technique, with photoetching, development
Method removes electrode zone and the insulating cement of chip induction region position；
Step 3: half-etching is bonded wafer and is bonded
A piece of fitting wafer is taken, the position above the electrode of crystal column surface sound filtering chip wafer will be first bonded and carry out half erosion
Trepanning is carved, the fitting wafer for having completed half-etching is then fitted in one by adhesive glue and surface sound filtering chip wafer
It rises, to form cavity above chip induction region；
Step 4: being thinned
Fitting wafer is ground, is thinned to the position of fitting wafer half-etching, to expose trepanning；
Step 5: preparing second insulating layer
One layer of insulating cement is applied on fitting wafer with coating technique, with photoetching, the method for development is by electrode zone position
Insulating cement removes；
Step 6: buried via hole
With in conducting resinl or plating metal embedment trepanning；
Step 7 prepares second metal layer
Second metal layer is prepared on the surface of conducting resinl or plating metal；
Step 8: cutting
Cutting is divided into single product.
Between the step 7 and step 8 plant ball is carried out on second metal layer surface.
First insulating layer uses B-stage glue, need not apply adhesive glue on fitting wafer at this time, directly be pasted
It closes.
The fitting wafer uses Silicon Wafer or metal material wafer.
Compared with the prior art, the advantages of the present invention are as follows：
1, compared with traditional technique, whole production procedure is wafer scale, the energy small sized encapsulating structure of shape, and
It is simple for process, it can guarantee the cavity structure of chip induction zone, the higher round metal chip level buried via hole type surface sound of reliability can be formed
Filtering chip structure；
2, round metal chip level buried via hole type surface sound filtering chip structure of the invention can be used directly, can also will be entire
Structure and other encapsulating structures form secondary encapsulation on substrate, form system in package.
Description of the drawings
Fig. 1 is a kind of schematic diagram of round metal chip level buried via hole type of the invention surface sound filtering chip encapsulating structure.
Fig. 2 ~ Fig. 9 is that a kind of manufacturing method of round metal chip level buried via hole type of the invention surface sound filtering chip encapsulating structure is real
Apply the process flow chart of example one.
Figure 10 ~ Figure 18 is a kind of manufacturing method of round metal chip level buried via hole type of the invention surface sound filtering chip encapsulating structure
The process flow chart of embodiment two.
Wherein：
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
First insulating layer 2
Adhesive glue 3
It is bonded wafer 4
Cavity 5
Trepanning 6
Second insulating layer 7
Conducting resinl or plating metal 8
Second metal layer 9
Metal ball 10.
Specific implementation mode
Below in conjunction with attached drawing embodiment, present invention is further described in detail.
As shown in Figure 1, a kind of round metal chip level buried via hole type surface sound filtering chip structure in the present embodiment, it includes table
Face sound filtering chip wafer 1,1 surface of surface sound filtering chip wafer includes electrode zone 1.1 and induction region 1.2, institute
It states region of the surface sound filtering chip wafer 1 in addition to electrode zone 1.1 and induction region 1.2 and is provided with the first insulating layer 2, it is described
Fitting wafer 4 is provided with by adhesive glue 3 on first insulating layer 2, is formed between the fitting wafer 4 and induction region 1.2 empty
Chamber 5, the fitting wafer 4 are provided with trepanning 6 at 1.1 position of electrode zone, and 4 surface of fitting wafer is provided with second absolutely
Edge layer 7, is filled with conducting resinl or plating metal 8 in the trepanning 6, and the surface of the conducting resinl or plating metal 8 is provided with the
Two metal layers 9 are provided with metal ball 10 in the second metal layer 9.
Embodiment one：
A kind of manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it includes following technique step
Suddenly：
Step 1: referring to Fig. 2, a piece of surface sound filtering chip wafer is taken；
Step 2: preparing the first insulating layer
Referring to Fig. 3, one layer of certain thickness insulating cement, such as PI are applied on the sound filtering chip wafer of surface with coating technique
（Polyimides）, PA (nylon, polyamide), with photoetching, the method for development is exhausted by electrode zone and chip induction region position
Edge glue removes；
Step 3: being bonded wafer trepanning and being bonded
Referring to Fig. 4, a piece of fitting wafer is taken, wafer will be first bonded and corresponds to above the electrode of surface sound filtering chip wafer
Position carry out trepanning, then the fitting wafer for having completed trepanning is bonded by adhesive glue with surface sound filtering chip wafer
Together, to form cavity above chip induction region；
Step 4: preparing second insulating layer
Referring to Fig. 5, one layer of insulating cement is applied on fitting wafer with coating technique, with photoetching, the method for development is by electrode district
The insulating cement of domain position removes；
Step 5: buried via hole
Referring to Fig. 6, in conducting resinl or plating metal embedment trepanning；
Step 6 prepares second metal layer
It is toasted by cleaning referring to Fig. 7, sputtering, resist coating, photoetching, development, copper electroplating layer removes photoresist, etches
Method the surface of conducting resinl or plating metal prepare second metal layer；
Step 7: planting ball
Referring to Fig. 8, plant ball is carried out on second metal layer surface；
Step 8: cutting
Referring to Fig. 9, cutting is divided into single product.
First insulating layer can be B-stage glue, be melted after colloid heating, can need not be bonded wafer at this time
Upper painting adhesive glue, is directly bonded；
The fitting wafer is Silicon Wafer or metal material；
The step 7 can be omitted.
Embodiment two：
A kind of manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it includes following technique step
Suddenly：
Step 1: referring to Figure 10, a piece of surface sound filtering chip wafer is taken；
Step 2: preparing the first insulating layer
Referring to Figure 11, one layer of certain thickness insulating cement, such as PI are applied on the sound filtering chip wafer of surface with coating technique
（Polyimides）, PA (nylon, polyamide), with photoetching, the method for development is exhausted by electrode zone and chip induction region position
Edge glue removes；
Step 3: half-etching is bonded wafer and is bonded
Referring to Figure 12, a piece of fitting wafer is taken, wafer will be first bonded and corresponds on the electrode of surface sound filtering chip wafer
The position of side carries out half-etching trepanning, and the fitting wafer for having completed half-etching is then filtered core by adhesive glue and surface sound
Wafer fits together, to form cavity above chip induction region；
Step 4: being thinned
Referring to Figure 13, fitting wafer is ground, is thinned to the position of fitting wafer half-etching, to expose trepanning；
Step 5: preparing second insulating layer
Referring to Figure 14, one layer of insulating cement is applied on fitting wafer with coating technique, with photoetching, the method for development is by electrode district
The insulating cement of domain position removes；
Step 6: buried via hole
Referring to Figure 15, in conducting resinl or plating metal embedment trepanning；
Step 7 prepares second metal layer
It is toasted by cleaning referring to Figure 16, sputtering, resist coating, photoetching, development, copper electroplating layer removes photoresist, etches
Method the surface of conducting resinl or plating metal prepare second metal layer；
Step 8: planting ball
Referring to Figure 17, plant ball is carried out on second metal layer surface；
Step 9: cutting
Referring to Figure 18, cutting is divided into single product.
First insulating layer can be B-stage glue, be melted after colloid heating, can need not be bonded wafer at this time
Upper painting adhesive glue, is directly bonded；
The fitting wafer is Silicon Wafer or metal material；
The step 8 can be omitted.
In addition to the implementation, all to use equivalent transformation or equivalent replacement the invention also includes there is an other embodiment
The technical solution that mode is formed should all be fallen within the scope of the hereto appended claims.
Claims (6)
1. a kind of manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that the method
It comprises the following steps that：
Step 1: taking a piece of surface sound filtering chip wafer；
Step 2: preparing the first insulating layer
One layer of certain thickness insulating cement is applied on the sound filtering chip wafer of surface with coating technique, with photoetching, the method for development
Electrode zone and the insulating cement of chip induction region position are removed；
Step 3: being bonded wafer trepanning and being bonded
A piece of fitting wafer is taken, wafer will be first bonded and be opened corresponding to the position above the electrode of surface sound filtering chip wafer
Then hole is fit together the fitting wafer for having completed trepanning by adhesive glue and surface sound filtering chip wafer, to
Cavity is formed above chip induction region；
Step 4: preparing second insulating layer
One layer of insulating cement is applied on fitting wafer with coating technique, with photoetching, the method for development is by the insulation of electrode zone position
Glue removes；
Step 5: buried via hole
With in conducting resinl or plating metal embedment trepanning；
Step 6 prepares second metal layer
Second metal layer is prepared on the surface of conducting resinl or plating metal；
Step 7: cutting
Cutting is divided into single product.
2. a kind of manufacturer of round metal chip level buried via hole type surface according to claim 1 sound filtering chip encapsulating structure
Method, it is characterised in that：Between step 6 and step 7 plant ball is carried out on second metal layer surface.
3. a kind of manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that the method
It comprises the following steps that：
Step 1: taking a piece of surface sound filtering chip wafer；
Step 2: preparing the first insulating layer
One layer of certain thickness insulating cement is applied on the sound filtering chip wafer of surface with coating technique, with photoetching, the method for development
Electrode zone and the insulating cement of chip induction region position are removed；
Step 3: half-etching is bonded wafer and is bonded
A piece of fitting wafer is taken, wafer will be first bonded and carries out half corresponding to the position above the electrode of surface sound filtering chip wafer
Trepanning is etched, the fitting wafer for having completed half-etching is then fitted in one by adhesive glue and surface sound filtering chip wafer
It rises, to form cavity above chip induction region；
Step 4: being thinned
Fitting wafer is ground, is thinned to the position of fitting wafer half-etching, to expose trepanning；
Step 5: preparing second insulating layer
One layer of insulating cement is applied on fitting wafer with coating technique, with photoetching, the method for development is by the insulation of electrode zone position
Glue removes；
Step 6: buried via hole
With in conducting resinl or plating metal embedment trepanning；
Step 7 prepares second metal layer
Second metal layer is prepared on the surface of conducting resinl or plating metal；
Step 8: cutting
Cutting is divided into single product.
4. a kind of manufacturer of round metal chip level buried via hole type surface according to claim 3 sound filtering chip encapsulating structure
Method, it is characterised in that：Between step 7 and step 8 plant ball is carried out on second metal layer surface.
5. a kind of manufacture of round metal chip level buried via hole type surface according to claim 1 or 3 sound filtering chip encapsulating structure
Method, it is characterised in that：First insulating layer uses B-stage glue, need not apply adhesive glue on fitting wafer at this time, directly
Tap into capable fitting.
6. a kind of manufacture of round metal chip level buried via hole type surface according to claim 1 or 3 sound filtering chip encapsulating structure
Method, it is characterised in that：The fitting wafer uses Silicon Wafer or metal material wafer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610203980.4A CN105810597B (en) | 2016-04-01 | 2016-04-01 | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610203980.4A CN105810597B (en) | 2016-04-01 | 2016-04-01 | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure |
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| CN105810597B true CN105810597B (en) | 2018-10-09 |
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| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106711105A (en) * | 2017-03-01 | 2017-05-24 | 华天科技（昆山）电子有限公司 | Packaging structure covering metal layer filling hole or slot and manufacturing method |
| CN112117195B (en) * | 2019-12-16 | 2023-06-02 | 中芯集成电路（宁波）有限公司 | Packaging method |
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| JP2004129222A (en) * | 2002-07-31 | 2004-04-22 | Murata Mfg Co Ltd | Piezoelectric component and manufacturing method thereof |
| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| US7576426B2 (en) * | 2005-04-01 | 2009-08-18 | Skyworks Solutions, Inc. | Wafer level package including a device wafer integrated with a passive component |
| DE102005016751B3 (en) * | 2005-04-11 | 2006-12-14 | Schott Ag | Method for producing packaged electronic components |
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