CN106301283A - The encapsulating structure of SAW filter and manufacture method - Google Patents

The encapsulating structure of SAW filter and manufacture method Download PDF

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Publication number
CN106301283A
CN106301283A CN201610975677.6A CN201610975677A CN106301283A CN 106301283 A CN106301283 A CN 106301283A CN 201610975677 A CN201610975677 A CN 201610975677A CN 106301283 A CN106301283 A CN 106301283A
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CN
China
Prior art keywords
cover plate
extraction electrode
electrode
saw filter
insulating barrier
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Pending
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CN201610975677.6A
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Chinese (zh)
Inventor
姜峰
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Xiamen Yun Tian Semiconductor Technology Co., Ltd.
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Wuxi Jimai Microelectronics Co Ltd
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Priority to CN201610975677.6A priority Critical patent/CN106301283A/en
Publication of CN106301283A publication Critical patent/CN106301283A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46Filters
    • H03H9/64Filters using surface acoustic waves
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves

Abstract

The present invention provides the encapsulating structure of SAW filter, including matrix and cover plate;The surface of matrix is coated with the first insulating barrier, covers a layer of piezo-electric material at the first surface of insulating layer;Piezoelectric is connected above multiple metal electrode;Described metal electrode includes extraction electrode and transducer electrode;The adhesive covering in SAW filter edge outside extraction electrode and extraction electrode, cover plate is pressed on the viscose glue on extraction electrode;Airtight cavity is formed between cover plate and the piezoelectric of matrix surface;Being provided with opening corresponding to extraction electrode top position in cover plate, make have metallic circuit with cover plate upper surface in opening, metallic circuit connects extraction electrode and extends to cover plate upper surface;Cover plate upper surface is coated with the second insulating barrier;Second insulating barrier covers the metallic circuit of cover plate upper surface;Opening making have the pad connecting metallic circuit over the second dielectric.The present invention compares current SAW filter low cost, vertical thickness significantly reduces and reliability is high.

Description

The encapsulating structure of SAW filter and manufacture method
Technical field
The present invention relates to a kind of electronic element packaging structure, the encapsulating structure of a kind of SAW filter.
Background technology
Growing along with filter package technology, SAW filter also, weight little towards high-performance, volume Gently, the direction of low cost is fast-developing.Simultaneously because of SAW filter properties of product and design function demand, need to ensure filter Ripple chip functions region can not contact any material, i.e. cavity structure design.
SAW filter encapsulation technology currently mainly is still by the pottery of wire bonding, metal, Plastic Package shape Formula, this kind of SAW filter encapsulating structure has the disadvantage in that
1, face seal lid is relatively costly;
2, the reliability of product is harsh to substrate and sealing lid flatness requirement, easily causes inefficacy.
3, device is installed accuracy, the impact of signal conductor, this series of uncertainty such as angle of welding are just made Become the discordance of device performance, even SAW filter has been damaged.
Patent of invention all concentrates on the encapsulation of mating of wave filter and other devices, the most domestic patent at present 201310391042.8 disclose a kind of SAW filter integrated encapsulation structure and method for packing thereof, filter including surface acoustic wave Ripple device chip, coupling tuning circuit and package casing, package casing is by encapsulation base plate, the outer pin of encapsulation base plate, sealing cap structure Becoming, sealing cap covers on encapsulation base plate.This invention have employed multiple-level stack on vertical stratification, so whole thickness is difficult to accomplish Ultra-thin requirement needed for consumer mobile phone electronic.
Such as patent of invention 201510497602.7 discloses the coupling of exempting from of a kind of SAW filter and encapsulates, including PCB or LTCC base and submounts are provided with SAW filter.It is independent that this kind of invention is all based on single wave filter Complete chip package, simultaneously as unavoidably employ base, which results in the increase of whole encapsulation volume, simultaneously high-volume The potential impact of performance of filter that may be present fluctuation in production.
Summary of the invention
For the deficiencies in the prior art, the present invention provides the encapsulating structure of a kind of SAW filter, and The encapsulating structure manufacture method of SAW filter, it is achieved that the wafer scale technique of SAW filter makes, and finally gives Ultrathin packaging SAW filter containing airtight cavity;The technical solution used in the present invention is:
The encapsulating structure manufacture method of a kind of SAW filter, comprises the following steps:
Step S1, it is provided that wafer is as matrix, at the surface elder generation depositing first insulator layer of matrix, then on the first insulating barrier again Deposit a layer of piezo-electric material;Make multiple metal electrode the most on the piezoelectric materials, including extraction electrode and transducer electrode;
Step S2, uses viscose glue by the SAW filter edges cover outside extraction electrode and extraction electrode;Then will lid Plate is bonded with matrix, and cover plate is pressed on the viscose glue on extraction electrode;Formed airtight between cover plate and the piezoelectric of matrix surface Cavity;Transducer electrode is positioned at the piezoelectric material surface in cavity;
Step S3, then makes opening corresponding to extraction electrode top position in cover plate, exposes extraction electrode;
Step S4, then makes metallic circuit in the opening of cover plate, and metallic circuit connects extraction electrode and extends on cover plate Surface;
Step S5, on the cover board surface deposits the second insulating barrier;Second insulating barrier covers the metallic circuit of cover plate upper surface;? Two insulating barrier upper sheds make the pad connecting metallic circuit;
Step S6, last cutting crystal wafer obtains single SAW filter.
Further, in step S1, extraction electrode and transducer electrode use plating or sputtering or typography to make.
Further, in step S2, the material of cover plate is glass, pottery, silicon or metal.
Further, in step S3, the opening in cover plate is made by the method for etching, sandblasting, laser or power auger.
Further, in step S4, the method that metallic circuit utilizes metal pressure to fill out, electroplate or deposit is formed.
Further, in step S4, metallic circuit part in the opening is solid metal column or hollow metal ring.
The encapsulating structure of the SAW filter that above-mentioned processing technology is formed, including matrix and cover plate;The surface of matrix It is coated with the first insulating barrier, covers a layer of piezo-electric material at the first surface of insulating layer;Piezoelectric is connected above multiple metal Electrode;Described metal electrode includes extraction electrode and transducer electrode;
The adhesive covering in SAW filter edge outside extraction electrode and extraction electrode, cover plate is pressed on extraction electrode On viscose glue;Airtight cavity is formed between cover plate and the piezoelectric of matrix surface;Transducer electrode is positioned at the piezoelectricity in cavity Material surface;
In cover plate, it is provided with opening corresponding to extraction electrode top position, opening makes have metallic circuit with cover plate upper surface, Metallic circuit connects extraction electrode and extends to cover plate upper surface;
Cover plate upper surface is coated with the second insulating barrier;Second insulating barrier covers the metallic circuit of cover plate upper surface;In the second insulation Layer upper shed also makes the pad having connection metallic circuit.
Further, metallic circuit part in the opening is solid metal column or hollow metal ring.
When cover sheet thickness is less, the invention allows for the encapsulating structure of another kind of SAW filter, Including matrix and cover plate;
The surface of matrix is coated with the first insulating barrier, covers a layer of piezo-electric material at the first surface of insulating layer;Above piezoelectric Connect and have multiple metal electrode;Described metal electrode includes extraction electrode and transducer electrode;
The adhesive covering in SAW filter edge outside extraction electrode and extraction electrode, cover plate is pressed on extraction electrode On viscose glue;Airtight cavity is formed between cover plate and the piezoelectric of matrix surface;Transducer electrode is positioned at the piezoelectricity in cavity Material surface;
In cover plate, it is provided with opening corresponding to extraction electrode top position, fills block of metal structure at opening part, it is achieved draw The outfan of electrode.
Further, it is provided with metal barrier between block of metal structure and extraction electrode.
It is an advantage of the current invention that:
1) the final SAW filter encapsulating products structure realized is compacted, and particularly general thickness has bigger thinning, compares mesh Front SAW filter low cost, vertical thickness significantly reduce and reliability height.
2) in view of using wafer-level packaging so that the packaging cost of whole wave filter is relatively low;
3) by the way of on the cover board punching, the signal of extraction electrode is exported so that the performance of SAW filter is protected Card, it is to avoid the impacts such as the stray inductance that routing produces.
Accompanying drawing explanation
Fig. 1 is the wave filter wafer schematic diagram of the present invention.
Fig. 2 is cover plate and the wave filter wafer bonding schematic diagram of the present invention.
Fig. 3 is to make opening on the wave filter wafer of the present invention to expose metal electrode schematic diagram.
Fig. 4 is the making metallic circuit schematic diagram of the present invention.
Fig. 5 is making the second insulating barrier and the soldered ball schematic diagram of the present invention.
Fig. 6 is the schematic diagram making block of metal structure at cover plate opening part of the present invention.
Detailed description of the invention
Below in conjunction with concrete drawings and Examples, the invention will be further described.
Embodiment one.
The present invention proposes the encapsulating structure manufacture method of a kind of SAW filter, comprises the following steps:
Step S1, as shown in Figure 1, it is provided that wafer, as matrix 1, at the surface elder generation depositing first insulator layer 2 of matrix 1, then exists A redeposited layer of piezo-electric material 3 on first insulating barrier 2;Then on piezoelectric 3, multiple metal electrode is made, including drawing electricity Pole 41 and transducer electrode 42;The corresponding transducer electrode 42 of each extraction electrode 41 electrically connects;
In this step, the material of matrix 1 can be silicon or diamond, and the thickness of matrix 1 is 50-500 μm;
First insulating barrier 2 thickness is 1-2 μm;This insulating barrier had both played the insulating effect of piezoelectric and wafer, also enhanced pressure The adhesiveness of electric material;
Extraction electrode 41 and transducer electrode 42 use plating or sputtering or typography to make;
It should be noted that this method makes multiple SAW filter on wafer simultaneously, final step is cut;
Step S2, as in figure 2 it is shown, use viscose glue 5 by the SAW filter limit outside extraction electrode 41 and extraction electrode 41 Edge covers;Then being bonded with matrix 1 by cover plate 6, cover plate 6 is pressed on the viscose glue 5 on extraction electrode 41;Cover plate 6 and matrix 1 surface Piezoelectric between form airtight cavity 7;Piezoelectric 3 surface that transducer electrode 42 is positioned in cavity 7;Transducer electricity Pole 42 usually interdigital electrode;
This viscose glue 5 protects extraction electrode 41, prevents corrosion, and bonding cover plate 6 and matrix 1, play isolation outside air simultaneously Effect;
The height of closed cavity 7 is 5 μm~200 μm;Typically, 50 μm or 80 μm or 100 μm.
The material of cover plate 6 is glass, pottery, silicon or metal;Cover plate 6 primarily serves the effect that isolation is extraneous;
Step S3, as it is shown on figure 3, then make opening 601 corresponding to extraction electrode 41 top position in cover plate 6, exposes and draws Go out electrode 41;
In this step, make opening 601 by the method for etching, sandblasting, laser or power auger;
Step S4, as shown in Figure 4, then makes metallic circuit 8 in the opening 601 of cover plate 6, and metallic circuit 8 connects draws electricity Pole 41 also extends to cover plate 6 upper surface;
Metallic circuit 8 in this step can realize the output of extraction electrode in the way of filling out to utilize metal pressure, electroplate or deposit, gold Belonging to the circuit 8 part in opening 601 is solid metal column or hollow metal ring;Metallic circuit 8 is divided in cover plate 6 upper surface part Circuit;
Metallic circuit 8 material is copper, nickel, stannum, silver or metal alloy;
Step S5, as it is shown in figure 5, deposit the second insulating barrier 9 at cover plate 6 upper surface;Second insulating barrier 9 covers cover plate 6 upper surface Metallic circuit 8;The pad 10 connecting metallic circuit 8 is made in the second insulating barrier 9 upper shed;
Step S6, last cutting crystal wafer obtains single SAW filter.
This encapsulating structure scheme achieves the wafer-level packaging of SAW filter so that SAW filter encapsulation is produced Product structure is compacted, and particularly general thickness has bigger thinning, significantly reduces than current SAW filter low cost, vertical thickness And it is high by property.The signal of extraction electrode is exported so that the performance of SAW filter obtains by the way of on the cover board punching To ensureing, it is to avoid impacts such as the stray inductances that routing produces.
Embodiment two, as shown in Figure 6.
When embodiment two is applicable to the situation that cover plate 6 thickness is less, the such as thickness of cover plate 6 less than 300 μm;
The encapsulating structure of SAW filter, including matrix 1 and cover plate 6;
The surface of matrix 1 is coated with the first insulating barrier 2, covers a layer of piezo-electric material 3 on the first insulating barrier 2 surface;Piezoelectric 3 It is connected above multiple metal electrode;Described metal electrode includes extraction electrode 41 and transducer electrode 42;
SAW filter edge adhesive 5 outside extraction electrode 41 and extraction electrode 41 covers, and cover plate 6 is pressed in extraction electricity On viscose glue 5 on pole 41;Airtight cavity 7 is formed between the piezoelectric on cover plate 6 and matrix 1 surface;Transducer electrode 42 Piezoelectric 3 surface in cavity 7;
In cover plate 6, it is provided with opening 601 corresponding to extraction electrode 41 top position, at opening 601, fills block of metal structure
8 ', it is achieved the outfan of extraction electrode 41.The material of block of metal structure 8 ' is stannum or copper;
Metal barrier (being not drawn into metal barrier in Fig. 6) can be set between block of metal structure 8 ' and extraction electrode 41;Gold The material belonging to barrier layer can be titanium, plays isolation block of metal structure 8 ' and the material of extraction electrode 41, it is to avoid occurs to ooze mutually.

Claims (10)

1. the encapsulating structure manufacture method of a SAW filter, it is characterised in that comprise the following steps:
Step S1, it is provided that wafer is as matrix (1), in surface elder generation depositing first insulator layer (2) of matrix (1), then first The upper redeposited layer of piezo-electric material (3) of insulating barrier (2);Then at piezoelectric (3) the multiple metal electrodes of upper making, including drawing Electrode (41) and transducer electrode (42);
Step S2, uses viscose glue (5) to be covered at the SAW filter edge of extraction electrode (41) and extraction electrode (41) outside Lid;Then being bonded with matrix (1) by cover plate (6), cover plate (6) is pressed on the viscose glue (5) on extraction electrode (41);Cover plate (6) with Airtight cavity (7) is formed between the piezoelectric on matrix (1) surface;Transducer electrode (42) is positioned at the piezoelectricity in cavity (7) Material (3) surface;
Step S3, then makes opening (601) corresponding to extraction electrode (41) top position in cover plate (6), exposes extraction electricity Pole (41);
Step S4, then makes metallic circuit (8) in the opening (601) in cover plate (6), and metallic circuit (8) connects extraction electrode And extend to cover plate (6) upper surface (41);
Step S5, deposits the second insulating barrier (9) at cover plate (6) upper surface;Second insulating barrier (9) covers cover plate (6) upper surface Metallic circuit (8);The pad (10) connecting metallic circuit (8) is made in the second insulating barrier (9) upper shed;
Step S6, last cutting crystal wafer obtains single SAW filter.
2. the encapsulating structure manufacture method of SAW filter as claimed in claim 1, it is characterised in that
In step S1, extraction electrode (41) and transducer electrode (42) use plating or sputtering or typography to make.
3. the encapsulating structure manufacture method of SAW filter as claimed in claim 1, it is characterised in that
In step S2, the material of cover plate (6) is glass, pottery, silicon or metal.
4. the encapsulating structure manufacture method of SAW filter as claimed in claim 1, it is characterised in that
In step S3, the opening (601) in cover plate is made by the method for etching, sandblasting, laser or power auger.
5. the encapsulating structure manufacture method of SAW filter as claimed in claim 1, it is characterised in that
In step S4, the method that metallic circuit (8) utilizes metal pressure to fill out, electroplate or deposit is formed.
6. the encapsulating structure manufacture method of SAW filter as claimed in claim 1, it is characterised in that
In step S4, the metallic circuit (8) part in opening (601) is solid metal column or hollow metal ring.
7. an encapsulating structure for SAW filter, including matrix (1) and cover plate (6);It is characterized in that,
The surface of matrix (1) is coated with the first insulating barrier (2), covers a layer of piezo-electric material (3) on the first insulating barrier (2) surface; Piezoelectric (3) is connected above multiple metal electrode;Described metal electrode includes extraction electrode (41) and transducer electrode (42);
The SAW filter edge adhesive (5) in extraction electrode (41) and extraction electrode (41) outside covers, and cover plate (6) is pressed On viscose glue (5) on extraction electrode (41);Airtight cavity is formed between the piezoelectric on cover plate (6) and matrix (1) surface (7);Transducer electrode (42) is positioned at piezoelectric (3) surface in cavity (7);
Being provided with opening (601) corresponding to extraction electrode (41) top position in cover plate (6), opening (601) neutralizes on cover plate (6) Surface makes metallic circuit (8), and metallic circuit (8) connects extraction electrode (41) and extends to cover plate (6) upper surface;
Cover plate (6) upper surface is coated with the second insulating barrier (9);Second insulating barrier (9) covers the metallic circuit of cover plate (6) upper surface (8);The pad (10) of connection metallic circuit (8) is had in (9) upper shed of the second insulating barrier making.
8. the encapsulating structure of SAW filter as claimed in claim 7;It is characterized in that,
(80 parts in opening (601) are solid metal column or hollow metal ring to metallic circuit.
9. an encapsulating structure for SAW filter, including matrix 1 and cover plate 6;It is characterized in that,
The surface of matrix (1) is coated with the first insulating barrier (2), covers a layer of piezo-electric material (3) on the first insulating barrier (2) surface; Piezoelectric (3) is connected above multiple metal electrode;Described metal electrode includes extraction electrode (41) and transducer electrode (42);
The SAW filter edge adhesive (5) in extraction electrode (41) and extraction electrode (41) outside covers, and cover plate (6) is pressed On viscose glue (5) on extraction electrode (41);Airtight cavity is formed between the piezoelectric on cover plate (6) and matrix (1) surface (7);Transducer electrode (42) is positioned at piezoelectric (3) surface in cavity (7);
In cover plate (6), it is provided with opening (601) corresponding to extraction electrode (41) top position, fills monoblock at opening (601) place Metal structure
(8 '), it is achieved the outfan of extraction electrode (41).
10. the encapsulating structure of SAW filter as claimed in claim 9;It is characterized in that,
It is provided with metal barrier between block of metal structure (8 ') and extraction electrode (41).
CN201610975677.6A 2016-11-07 2016-11-07 The encapsulating structure of SAW filter and manufacture method Pending CN106301283A (en)

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