CN105810597A - Manufacturing method for metal disc buried-hole type surface acoustic filtering chip packaging structure - Google Patents
Manufacturing method for metal disc buried-hole type surface acoustic filtering chip packaging structure Download PDFInfo
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- CN105810597A CN105810597A CN201610203980.4A CN201610203980A CN105810597A CN 105810597 A CN105810597 A CN 105810597A CN 201610203980 A CN201610203980 A CN 201610203980A CN 105810597 A CN105810597 A CN 105810597A
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- 239000002184 metal Substances 0.000 title claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 64
- 238000001914 filtration Methods 0.000 title claims abstract description 56
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 55
- 238000010030 laminating Methods 0.000 claims abstract description 54
- 239000000853 adhesive Substances 0.000 claims abstract description 13
- 230000001070 adhesive effect Effects 0.000 claims abstract description 13
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 239000004568 cement Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 21
- 230000006698 induction Effects 0.000 claims description 17
- 239000003292 glue Substances 0.000 claims description 16
- 238000000576 coating method Methods 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000011161 development Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 238000001259 photo etching Methods 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a manufacturing method for a metal disc buried-hole type surface acoustic filtering chip packaging structure. The method comprises the following steps of step 1, taking a surface acoustic filtering chip wafer; step 2, preparing a first insulating layer; step 3, forming an open hole in the wafer, and carrying out a wafer laminating step; step 4, preparing a second insulating layer; step 5, embedding the buried hole into the open hole through conductive adhesive or electroplating metal; step 6, preparing a second metal layer; step 7, carrying out reballing on the surface of the second metal layer; and step 8, cutting the obtained product into singe products. According to the manufacturing method for the metal disc buried-hole type surface acoustic filtering chip packaging structure, the surface acoustic filtering device with smaller area and size, and lower manufacturing cost is provided.
Description
Technical field
The present invention relates to the manufacture method of a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, belong to technical field of semiconductor encapsulation.
Background technology
Surface sound filter apparatus is widely used in RF and IF application, including pocket telephone, radiophone and various radio device.By using surface sound filtering, these electronic equipments are carried out the filtering of the signal of telecommunication, time delay etc. and processes.Because of surface acoustical filter properties of product and design function demand, it is necessary to ensure that filtering chip functional area can not contact any material, i.e. cavity structure design.
Existing surface acoustic filter part encapsulating structure is filtering chip to be passed through conductive projection flip chip bonding be connected with ceramic substrate and be embedded in substrate cavity body completely, and substrate surface adds crown cap protection.But this kind of structural metal lid is relatively costly, and ceramic substrate compares high with the flatness requirement of crown cap, it is easy to have the situation of close bad.Additionally the manufacture method of other surface acoustic filter parts is to use top sealing or coating process that module is sealed, and forms cavity structure.
The method for packing of existing surface acoustic filter part, flow process is longer, relatively costly, and physical dimension or relatively larger, under the trend trend that current electronic equipment does less and less, it is necessary to constantly reduce electronic installation and the weight of surface acoustic filter part wherein used and size.
Summary of the invention
The technical problem to be solved is the manufacture method providing a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure for above-mentioned prior art, it is provided that the surface acoustic filter part of a kind of less area and volume, and has less manufacturing cost.
This invention address that the technical scheme that the problems referred to above adopt is: the manufacture method of a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, laminating wafer perforate are also fitted
Take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out perforate, then the laminating wafer being complete perforate is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 4, prepare the second insulating barrier
Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 5, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 6, prepares the second metal level
The second metal level is prepared on the surface of conducting resinl or plated metal；
Step 7, cutting
Cutting is divided into single product.
Carry out planting ball at the second layer on surface of metal between described step 6 and step 7.
A kind of manufacture method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, half-etching laminating wafer are also fitted
Take a piece of laminating wafer, first the position above the electrode of laminating crystal column surface sound filtering chip wafer is carried out half-etching perforate, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 4, thinning
Laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose perforate；
Step 5, prepare the second insulating barrier
Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 6, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
The second metal level is prepared on the surface of conducting resinl or plated metal；
Step 8, cutting
Cutting is divided into single product.
Carry out planting ball at the second layer on surface of metal between described step 7 and step 8.
Described first insulating barrier adopts B-stage glue, now need not be coated with adhesive glue on laminating wafer, be made directly laminating.
Described laminating wafer adopts Silicon Wafer or metal material wafer.
Compared with prior art, it is an advantage of the current invention that:
1, compared with traditional technique, integral production flow process is wafer scale, can form undersized encapsulating structure, and technique is simple, can guarantee that the cavity structure of chip induction zone, can form the round metal chip level buried via hole type surface sound filtering chip structure that reliability is higher；
2, the round metal chip level buried via hole type surface sound filtering chip structure of the present invention can directly use, it is also possible to total and other encapsulating structures are formed secondary encapsulation on substrate, forms system in package.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the present invention a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure.
Fig. 2 ~ Fig. 9 is the process chart of the manufacture method embodiment one of the present invention a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure.
Figure 10 ~ Figure 18 is the process chart of the manufacture method embodiment two of the present invention a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure.
Wherein:
Surface sound filtering chip wafer 1
Electrode zone 1.1
Induction region 1.2
First insulating barrier 2
Adhesive glue 3
Laminating wafer 4
Cavity 5
Perforate 6
Second insulating barrier 7
Conducting resinl or plated metal 8
Second metal level 9
Metal ball 10.
Detailed description of the invention
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
nullAs shown in Figure 1，A kind of round metal chip level buried via hole type surface sound filtering chip structure in the present embodiment，It includes surface sound filtering chip wafer 1，Sound filtering chip wafer 1 surface, described surface includes electrode zone 1.1 and induction region 1.2，The sound filtering chip wafer 1 region except electrode zone 1.1 and induction region 1.2 in described surface is provided with the first insulating barrier 2，Described first insulating barrier 2 is provided with laminating wafer 4 by adhesive glue 3，Cavity 5 is formed between described laminating wafer 4 and induction region 1.2，Described laminating wafer 4 is provided with perforate 6 in electrode zone 1.1 position，Described laminating wafer 4 surface configuration has the second insulating barrier 7，Conducting resinl or plated metal 8 it is filled with in described perforate 6，The surface configuration of described conducting resinl or plated metal 8 has the second metal level 9，Described second metal level 9 is provided with metal ball 10.
Embodiment one:
A kind of manufacture method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it comprises the following steps that:
Step one, referring to Fig. 2, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Referring to Fig. 3, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, laminating wafer perforate are also fitted
Referring to Fig. 4, take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out perforate, then the laminating wafer being complete perforate is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 4, prepare the second insulating barrier
Referring to Fig. 5, being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 5, buried via hole
Referring to Fig. 6, imbed in perforate with conducting resinl or plated metal；
Step 6, prepares the second metal level
Referring to Fig. 7, by cleaning, baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the second metal level on the surface of conducting resinl or plated metal；
Step 7, plant ball
Referring to Fig. 8, carry out planting ball at the second layer on surface of metal；
Step 8, cutting
Referring to Fig. 9, cutting is divided into single product.
Described first insulating barrier can be B-stage glue, melted after colloid heating, now can be coated with adhesive glue on laminating wafer, be made directly laminating；
Described laminating wafer is Silicon Wafer or metal material；
Described step 7 can be omitted.
Embodiment two:
A kind of manufacture method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it comprises the following steps that:
Step one, referring to Figure 10, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Referring to Figure 11, on the sound filtering chip wafer of surface, be coated with one layer of certain thickness insulating cement with coating technique, such as PI(polyimides), PA (nylon, polyamide), with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, half-etching laminating wafer are also fitted
Referring to Figure 12, take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out half-etching perforate, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 4, thinning
Referring to Figure 13, laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose perforate；
Step 5, prepare the second insulating barrier
Referring to Figure 14, being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 6, buried via hole
Referring to Figure 15, imbed in perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
Referring to Figure 16, by cleaning, baking, sputtering, resist coating, photoetching, development, copper electroplating layer, photoresist of delustering, the method for etching prepares the second metal level on the surface of conducting resinl or plated metal；
Step 8, plant ball
Referring to Figure 17, carry out planting ball at the second layer on surface of metal；
Step 9, cutting
Referring to Figure 18, cutting is divided into single product.
Described first insulating barrier can be B-stage glue, melted after colloid heating, now can be coated with adhesive glue on laminating wafer, be made directly laminating；
Described laminating wafer is Silicon Wafer or metal material；
Described step 8 can be omitted.
In addition to the implementation, present invention additionally comprises the technical scheme that other embodiments, all employing equivalents or equivalence substitute mode are formed, all should fall within the protection domain of the claims in the present invention.
Claims (6)
1. the manufacture method of a round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, laminating wafer perforate are also fitted
Take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out perforate, then the laminating wafer being complete perforate is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 4, prepare the second insulating barrier
Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 5, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 6, prepares the second metal level
The second metal level is prepared on the surface of conducting resinl or plated metal；
Step 7, cutting
Cutting is divided into single product.
2. the manufacture method of a kind of round metal chip level buried via hole type surface according to claim 1 sound filtering chip encapsulating structure, it is characterised in that: carry out planting ball at the second layer on surface of metal between step 6 and step 7.
3. the manufacture method of a round metal chip level buried via hole type surface sound filtering chip encapsulating structure, it is characterised in that described method comprises the following steps that:
Step one, take a piece of surface sound filtering chip wafer；
Step 2, prepare the first insulating barrier
Being coated with one layer of certain thickness insulating cement on the sound filtering chip wafer of surface with coating technique, with photoetching, the insulating cement of electrode zone and chip induction region position is removed by the method for development；
Step 3, half-etching laminating wafer are also fitted
Take a piece of laminating wafer, first the position that laminating wafer corresponds to above the electrode of surface sound filtering chip wafer is carried out half-etching perforate, then the laminating wafer being complete half-etching is fit together by adhesive glue and surface sound filtering chip wafer, thus being formed over cavity at chip induction region；
Step 4, thinning
Laminating wafer is ground, is thinned to the position of laminating wafer half-etching, to expose perforate；
Step 5, prepare the second insulating barrier
Being coated with one layer of insulating cement with coating technique on laminating wafer, with photoetching, the insulating cement of electrode zone position is removed by the method for development；
Step 6, buried via hole
Imbed in perforate with conducting resinl or plated metal；
Step 7, prepares the second metal level
The second metal level is prepared on the surface of conducting resinl or plated metal；
Step 8, cutting
Cutting is divided into single product.
4. the manufacture method of a kind of round metal chip level buried via hole type surface according to claim 3 sound filtering chip encapsulating structure, it is characterised in that: carry out planting ball at the second layer on surface of metal between step 7 and step 8.
5. the manufacture method of a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure according to claim 1 or 3, it is characterized in that: described first insulating barrier adopts B-stage glue, now need not be coated with adhesive glue on laminating wafer, be made directly laminating.
6. the manufacture method of a kind of round metal chip level buried via hole type surface sound filtering chip encapsulating structure according to claim 1 or 3, it is characterised in that: described laminating wafer adopts Silicon Wafer or metal material wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203980.4A CN105810597B (en) | 2016-04-01 | 2016-04-01 | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610203980.4A CN105810597B (en) | 2016-04-01 | 2016-04-01 | The manufacturing method of round metal chip level buried via hole type surface sound filtering chip encapsulating structure |
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| CN105810597A true CN105810597A (en) | 2016-07-27 |
| CN105810597B CN105810597B (en) | 2018-10-09 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106711105A (en) * | 2017-03-01 | 2017-05-24 | 华天科技（昆山）电子有限公司 | Packaging structure covering metal layer filling hole or slot and manufacturing method |
| CN112117195A (en) * | 2019-12-16 | 2020-12-22 | 中芯集成电路（宁波）有限公司 | Packaging method |
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| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| CN101156242A (en) * | 2005-04-11 | 2008-04-02 | 肖特股份公司 | Method for the production of enclosed electronic components, and enclosed electronic component |
| CN101496162A (en) * | 2005-04-01 | 2009-07-29 | 斯盖沃克斯瑟路申斯公司 | Wafer level package including a device wafer integrated with a passive component |
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2016
- 2016-04-01 CN CN201610203980.4A patent/CN105810597B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1565078A (en) * | 2002-07-31 | 2005-01-12 | 株式会社村田制作所 | Piezoelectric component and production method therefor |
| US6777263B1 (en) * | 2003-08-21 | 2004-08-17 | Agilent Technologies, Inc. | Film deposition to enhance sealing yield of microcap wafer-level package with vias |
| CN101496162A (en) * | 2005-04-01 | 2009-07-29 | 斯盖沃克斯瑟路申斯公司 | Wafer level package including a device wafer integrated with a passive component |
| CN101156242A (en) * | 2005-04-11 | 2008-04-02 | 肖特股份公司 | Method for the production of enclosed electronic components, and enclosed electronic component |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106301283A (en) * | 2016-11-07 | 2017-01-04 | 无锡吉迈微电子有限公司 | The encapsulating structure of SAW filter and manufacture method |
| CN106711105A (en) * | 2017-03-01 | 2017-05-24 | 华天科技（昆山）电子有限公司 | Packaging structure covering metal layer filling hole or slot and manufacturing method |
| CN112117195A (en) * | 2019-12-16 | 2020-12-22 | 中芯集成电路（宁波）有限公司 | Packaging method |
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| CN105810597B (en) | 2018-10-09 |
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